CN107293645B - white-light top-emitting organic light-emitting diode and preparation method thereof - Google Patents
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- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
- H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
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Abstract
the invention provides a white top light emitting type organic light emitting diode. The white top-emitting organic light-emitting diode comprises a substrate, a reflecting anode, a hole injection layer, a hole transport layer, a double blue light emitting layer, a red light emitting layer, an electron transport layer, a semitransparent cathode and a light coupling-out layer which are sequentially evaporated from bottom to top. The invention has the beneficial effects that: the white top-emitting organic light-emitting diode can effectively improve the energy transfer efficiency, enhance the intensity of red light and finally improve the luminous efficiency and the color rendering index of white light. The invention also provides a preparation method based on the white light top-emitting organic light-emitting diode.
Description
Technical Field
The invention belongs to the technical field of organic electroluminescence, and particularly relates to a white top light emitting type organic light emitting diode and a preparation method thereof.
background
Organic Light Emitting Diodes (OLEDs) are the most promising new generation of light emitting technologies due to their advantages of being all solid-state, active, high brightness, low power consumption, high light emitting efficiency, wide operating temperature, flexible, etc. White light OLEDs not only can realize full color display, but also can be used as an illumination light source and a backlight source for liquid crystal display, and have raised research enthusiasm in academics and industry. Conventional white OLEDs are of the bottom-emitting type, i.e. light is emitted from a transparent glass substrate. The bottom-emitting white OLED is combined with a Thin Film Transistor (TFT) driving circuit manufactured at the periphery of an OLED pixel and is used in an Active Matrix Organic Light Emitting Diode (AMOLED) display, and the TFT can limit the aperture opening ratio of the OLED, so that the pixel area is reduced and the brightness of a display screen is influenced. In a top emission Type Organic Light Emitting Device (TOLED), light is emitted from a top translucent electrode, and an emission surface is separated from a TFT, so that an aperture ratio of approximately 100% can be obtained, and the luminance of a display can be improved. Color displays based on silicon-based top-emitting white OLEDs are known as one of the most attractive full-color technologies because they can simultaneously utilize the high aperture ratio of top-emitting devices, mature silicon-based driving circuits, and color film technologies. Obtaining high-performance white-light TOLED is an important means for realizing the technology and improving the performance of the AMOLED color display.
In order to meet the commercial requirement, the white-light TOLED must meet a series of requirements on chromaticity performance, such as: the color temperature of the white light has color coordinates near an energy point (0.33 ) of white light and the like, the color temperature is between 2500K and 6500K, and the color coordinate drifts less than (0.01 ) under different voltages, and the like. In a top emission type device, a microcavity effect may be formed in the device due to the high reflectivity of the metal electrodes on both sides. The microcavity effect not only reduces the luminous efficiency of the device, but also can cause light with certain wavelength in the spectrum to be enhanced by resonance, and the change of the spectrum along with the angle is large, thereby influencing the chromaticity performance of white light and making the high-efficiency and high-quality white light difficult to realize. In the conventional organic light emitting diode, the total thickness of the organic layers is about 100nm, and the thickness of the organic layers enables the resonance of the microcavity to be remarkably enhanced on red light and remarkably inhibited on blue light. In addition, the blue light emitting material has low light emitting efficiency, so that the key point for realizing the high-performance white light TOLED is to improve the intensity of blue light in the device.
before vacuum evaporation film-forming, firstly, according to different application purposes, metal, glass, plastics and the like are selected as substrates, the substrates used for film-forming must have very high flatness, then the substrates are thoroughly cleaned to remove dirt attached to the surfaces of the substrates, the above two steps have very important influence on the growth condition and the final performance of the film, and in the process of vacuum evaporation, substances to be film-formed are evaporated or sublimated under the condition of ensuring that an evaporation chamber is in a high vacuum degree of 10 -6 -10 -4, so that the substances are precipitated on the surfaces of the substrates earlier.
The vacuum evaporation technology is the mainstream technology for preparing the OLED at present, and has the following advantages:
(1) the method can be suitable for plating various functional films with low bonding strength requirements, such as conductive films of electrodes, alloy films, organic films and the like;
(2) can prepare various films on the surfaces of metal, semiconductor, insulator, even plastic and paper;
(3) The film with different microstructures and crystal forms can be obtained by evaporating magic films at different deposition rates, different substrate temperatures and different steam molecule incidence angles;
(4) The purity of the film is very high;
(5) The thickness and the composition of the film can be easily detected and controlled on line.
there is a need for a white top-emitting organic light emitting diode and a method for fabricating the same that can effectively improve energy transfer efficiency, enhance red light intensity, and finally improve the light emitting efficiency and color rendering index of white light.
Disclosure of Invention
the invention aims to provide a white top light emitting organic light emitting diode which can effectively improve energy transfer efficiency, enhance red light intensity and finally improve the light emitting efficiency and color rendering index of white light and a preparation method thereof.
The technical scheme of the invention is as follows: a white top-emitting organic light-emitting diode comprises a substrate, a reflecting anode, a hole injection layer, a hole transport layer, a double blue light emitting layer, a red light emitting layer, an electron transport layer, a semitransparent cathode and a light coupling-out layer which are sequentially evaporated from bottom to top.
Preferably, the substrate is a glass substrate, a silicon wafer or a flexible substrate, the reflective anode is a silver film, and the thickness of the film is 80-100 nm.
preferably, the hole injection layer is composed of a MoOx layer and an m-MTDATA layer in the order from bottom to top, wherein the MoOx layer has a thickness of 2-3nm and the m-MTDATA layer has a thickness of 25nm, and the hole transport layer is an NPB layer having a thickness of 10 nm.
preferably, the double blue light emitting layer is of a heterojunction structure composed of a hole type blue light layer and an electron type blue light layer in the following order from bottom to top, the hole type blue light layer is formed by doping a blue light guest material with a hole type host material, the thickness of the hole type blue light layer is 15nm, the electron type blue light layer is formed by doping a blue light guest material with an electron type host material, the thickness of the electron type blue light layer is 4nm, the blue light guest material is a phosphorescent blue light material, and the doping mass percentage of the phosphorescent blue light material relative to the hole type host material and the electron type host material is 7%.
Preferably, the red light emitting layer is formed by doping an electronic host material with a red light guest material and a green light guest material, the thickness of the red light emitting layer is 11nm, the red light guest material is a phosphorescent red light material, and the doping percentage of the phosphorescent red light material relative to the electronic host material is 2%; the green guest material is a phosphorescent green material, and the doping quality percentage of the phosphorescent green material relative to the electronic host material is 2%.
Preferably, the electron transport layer is a BPhen layer having a thickness of 30nm, and the semitransparent cathode is composed of a layer of Sm having a thickness of 4nm and a layer of Ag having a thickness of 12nm in that order from below.
preferably, the material of the light out-coupling layer is m-MTDATA with a thickness of 40 nm.
A preparation method based on the white light top-emitting organic light-emitting diode comprises the following steps:
Cleaning the substrate, namely cleaning a glass substrate as the substrate, putting the glass substrate into a vacuum evaporation chamber, and vacuumizing to more than 5 multiplied by 10 -4 Pa;
Evaporating a reflective anode: evaporating a reflective anode at a deposition rate of 0.1 nm/S;
Evaporating a hole injection layer: firstly, evaporating a MoOx layer by using a single-component organic material MoOx, and then evaporating an m-MTDATA layer by using a single-component organic material m-MTDATA;
Evaporating a hole transport layer: evaporating an NPB layer by adopting a single-component organic material;
evaporating and plating the double blue light emitting layers: evaporating a hole blue layer by adopting a hole type host material and a blue light object material, and evaporating an electronic type blue layer by adopting an electronic type host material and a blue light object material;
Evaporating a red light emitting layer: preparing the red light emitting layer by co-evaporation of a red light guest material and a green light guest material;
Evaporating an electron transport layer: the material is prepared by adopting a single-component organic material BPhen through evaporation;
Evaporating a semitransparent cathode: firstly, Sm is evaporated; then, Ag is evaporated, and the deposition rate of Sm and Ag is 0.1nm/S during evaporation;
Evaporating a light coupling-out layer: is prepared by vapor deposition of single-component organic material m-MTDATA.
Preferably, the hole type host material is a TCTA material, the blue light guest material is a phosphorescent blue light material FIrpic, the electron type host material is an SPPO material, the red light guest material is a phosphorescent red light material ir (mdq) 2 (acac), and the green light guest material is a phosphorescent green light material ir (ppy) 3.
the invention has the beneficial effects that: the white top-emitting organic light-emitting diode is characterized in that a green phosphorescent material is doped in a red light emitting layer, so that the efficiency of exciton transfer from a main material to a red light material is improved, the intensity and efficiency of red light are enhanced, and the efficiency of white light is further enhanced.
Moreover, the green material doped in the white top-emitting organic light-emitting diode is beneficial to electron transmission, so that the exciton recombination region approaches to the anode, the red peak is blue-shifted, and the color rendering index of the white light is improved.
Drawings
Fig. 1 is a schematic structural diagram of a white top-emission organic light emitting diode according to an embodiment of the present invention;
FIG. 2 is a graph showing a comparison of current density and current efficiency of the white top emission type OLED shown in FIG. 1;
fig. 3 is a graph showing a comparison of current density and normalized intensity of the white top emission type organic light emitting diode shown in fig. 1.
Detailed Description
in order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Unless the context clearly dictates otherwise, the elements and components of the present invention may be present in either single or in multiple forms and are not limited thereto. Although the steps in the present invention are arranged by using reference numbers, the order of the steps is not limited, and the relative order of the steps can be adjusted unless the order of the steps is explicitly stated or other steps are required for the execution of a certain step. It is to be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
fig. 1 is a schematic structural diagram of a white top-emitting organic light emitting diode according to an embodiment of the present invention. The white top-emitting organic light-emitting diode 100 provided by the invention comprises a substrate 1, a reflecting anode 2, a hole injection layer 3, a hole transport layer 4, a double blue light emitting layer 5, a red light emitting layer 6, an electron transport layer 7, a semitransparent cathode 8 and a light coupling-out layer 9 which are sequentially evaporated from bottom to top.
The substrate 1 is a glass substrate, a silicon wafer or a flexible substrate, the reflecting anode 2 is a silver film, and the thickness of the film is 80-100 nm.
the hole injection layer 3 is composed of a MoOx layer and an m-MTDATA layer in the order from bottom to top, wherein the MoOx layer is a molybdenum oxide layer with the thickness of 2-3 nm; the m-MTDATA layer is composed of 4,4' -tris [ 3-methylphenyl (phenyl) amino ] triphenylamine and has a thickness of 25 nm; the hole transport layer 4 is an NPB layer, composed of a polymer N, N '-di (1-naphthyl) -N, N' -diphenyl-1, 1 '-biphenyl-4-4' -diamine, and its thickness is 10 nm.
The double blue light emitting layer 5 is a heterojunction structure composed of a hole type blue light layer and an electron type blue light layer in this order from the bottom up. The hole type blue light layer is formed by doping a hole type host material with a blue light object material, the thickness of the hole type blue light layer is 15nm, and the electron type blue light layer is formed by doping an electron type host material with a blue light object material, and the thickness of the electron type blue light layer is 4 nm. The blue light guest material is a phosphorescent blue light material, and the doping quality percentage of the phosphorescent blue light material relative to the hole type host material and the electron type host material is 7%. Preferably, the host material of void type is 4,4',4 ″ -tris (N-carbazolyl) -triphenylamine material, abbreviated as: a TCTA material; the blue light guest material is a phosphorescent blue light material FIrpic, and the phosphorescent blue light material FIrpic is a bis (4, 6-difluorophenylpyridine-N, C2) pyridine formyl iridium material, which is called FIrpic material for short; the electronic type host material is a 2- (diphenyl) spirobifluorene material, SPPO material for short.
the red light emitting layer 6 is formed by doping the electron-type host material with a red light guest material and a green light guest material, and has a thickness of 11nm, the red light guest material is a phosphorescent red light material, the phosphorescent red light material has a doping percentage of 2% relative to the electron-type host material, the green light guest material is a phosphorescent green light material, the phosphorescent green light material has a doping percentage of 2% relative to the electron-type host material, preferably, the red light guest material is a phosphorescent red light material Ir (MDQ) 2 (acac), the green light guest material is a phosphorescent green light material Ir (ppy) 3, and the phosphorescent red light material Ir (MDQ) 2 (acac) is a (acetylacetone) bis (2-methyl dibenzo [ F, H ] quinoxaline) iridium (III) material, and the phosphorescent green light material Ir (ppy) 3 is a tris (2-phenylpyridine) iridium (III) material.
The electron transport layer 7 is a BPhen layer, consists of 4, 7-diphenyl-1, 10-phenanthroline material and has the thickness of 30 nm; the semitransparent cathode 8 is composed of an Sm layer with a thickness of 4nm and an Ag layer with a thickness of 12nm in the order from bottom to top; the material of the light out-coupling layer 9 is m-MTDATA with a thickness of 40 nm.
A preparation method based on the white top light emitting type organic light emitting diode 100 comprises the following steps:
Cleaning the substrate, namely cleaning a glass substrate as the substrate 1, putting the glass substrate into a vacuum evaporation chamber, and vacuumizing to more than 5 multiplied by 10 -4 Pa;
evaporation coating of the reflective anode 2: evaporating the metal Ag reflecting anode 2 at a deposition rate of 0.1nm/S, wherein the thickness is 80 nm;
Evaporation of hole injection layer 3: firstly, evaporating a MoOx layer by using a single-component organic material MoOx, wherein the deposition rate is 0.1nm/S, the evaporation thickness is 2nm, cooling for 30 minutes, and evaporating an m-MTDATA layer by using a single-component organic material m-MTDATA, wherein the deposition rate is 0.1nm/S, and the evaporation thickness is 25 nm;
Evaporation of hole transport layer 4: evaporating an NPB layer by adopting a single-component organic material, wherein the deposition rate is 0.1nm/S, and the evaporation thickness is 15 nm;
Evaporating the double blue light emitting layer 5: firstly, a hole blue layer is evaporated by adopting a hole type host material TCTA and a blue light object material FIrpic, the thickness is 15nm, and then an electronic type host material SPPO: 7% by mass of a blue light guest material FIrpic evaporation electronic blue layer, wherein the thickness is 4nm, the deposition rate of evaporation TCTA and SPPO is 0.1nm/S, the deposition rate of FIrpic is 0.007 nm/S, and the doping mass percentage of the phosphorescent blue light material FIrpic relative to the hole type host material TCTA and the electronic type host material SPPO is 7%;
evaporating a red light emitting layer 6 by co-evaporation of an electron-type host material SPPO, a red light guest material Ir (MDQ) 2 (acac) and a green light guest material Ir (ppy) 3 with a thickness of 11nm, wherein the deposition rate of evaporating the electron-type host material SPPO is 0.1nm/S, the deposition rates of the red light guest material Ir (MDQ) 2 (acac) and the green light guest material Ir (ppy) 3 are both 0.002 nm/S, and the doping mass percentage of the red light guest material Ir (MDQ) 2 (acac) and the green light guest material Ir (ppy) 3 relative to the electron-type host material SPPO is 2%;
The evaporation electron transmission layer 7 is formed by adopting a single-component organic material BPhen evaporation, the thickness is 30nm, and the deposition rate in the evaporation is 0.1 nm/S.
and (3) evaporating a semitransparent cathode 8, wherein the thickness of Sm is 4nm firstly, the thickness of Ag is 12nm secondly, and the deposition rate of Sm and Ag during evaporation is 0.1 nm/S.
The evaporated light coupling-out layer 9 is formed by evaporating a single-component organic material m-MTDATA, the thickness is 40nm, and the deposition rate during evaporation is 0.1 nm/S.
In addition, the white top emission organic light emitting diode 100 provided by the present invention is measured for current-voltage-luminance and spectral characteristics by a Keithley2400 current source in combination with a PR-655 spectrometer.
as shown in fig. 2 and fig. 3, the maximum efficiency of the white top-emitting oled 100 before optimization is 9.68 cd/a, and the maximum efficiency after optimization is 10.21 cd/a; furthermore, as can be seen from the spectrum diagram of fig. 3, the white top-emission organic light emitting diode 100 increases the emission intensity of green and red light bands in the spectrum due to the increased intensity of red light and the blue shift of the red peak, thereby increasing the color rendering index of white light from 66 to 69.
compared with the prior art, the white top-emitting organic light-emitting diode 100 provided by the invention has the advantages that the green phosphorescent material is doped in the red light emitting layer 6, the efficiency of transferring excitons from the main material to the red light material is improved, the intensity and the efficiency of red light are enhanced, and further the efficiency of white light is enhanced.
moreover, the green material doped in the white top-emitting organic light emitting diode 100 is helpful for electron transmission, and the exciton recombination region is close to the anode, so that the red peak is blue-shifted, and the color rendering index of the white light is improved.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (8)
1. A white top-emitting Organic Light Emitting Diode (OLED) comprising: the organic electroluminescent device comprises a substrate, a reflecting anode, a hole injection layer, a hole transport layer, a double blue light emitting layer, a red light emitting layer, an electron transport layer, a semitransparent cathode and a light coupling-out layer which are sequentially evaporated from bottom to top;
The red light emitting layer is formed by doping a red light guest material and a green light guest material by an electron host material SPPO, wherein the red light guest material is a phosphorescent red light material Ir (MDQ) 2 acac, and the green light guest material is a phosphorescent green light material Ir (ppy) 3;
The thickness of the red light emitting layer is 11nm, and the doping quality percentage of the phosphorescent red light emitting material relative to the electronic type main body material is 2%; the doping percentage of the phosphorescent green material relative to the electronic host material is 2%.
2. the white top emission type organic light emitting diode according to claim 1, wherein: the substrate is a glass substrate, a silicon chip or a flexible substrate, the reflecting anode is a silver film, and the thickness of the film is 80-100 nm.
3. the white top emission type organic light emitting diode according to claim 1, wherein: the hole injection layer is composed of a MoOx layer and an m-MTDATA layer in the order from bottom to top, wherein the MoOx layer is 2-3nm thick, the m-MTDATA layer is 25nm thick, and the hole transport layer is an NPB layer and is 10nm thick.
4. The white top emission type organic light emitting diode according to claim 1, wherein: the double blue light emitting layers are of a heterojunction structure formed by a cavity type blue light layer and an electron type blue light layer in sequence from bottom to top, the cavity type blue light layer is formed by doping a cavity type host material with a blue light object material, the thickness of the cavity type blue light layer is 15nm, the electron type blue light layer is formed by doping an electron type host material with a blue light object material, the thickness of the electron type blue light layer is 4nm, the blue light object material is a phosphorescent blue light material, and the phosphorescent blue light material is 7% of doped quality relative to the cavity type host material and the electron type host material.
5. The white top emission type organic light emitting diode according to claim 1, wherein: the electron transport layer is a BPhen layer with a thickness of 30nm, and the semitransparent cathode is composed of an Sm layer with a thickness of 4nm and an Ag layer with a thickness of 12nm in sequence from bottom to top.
6. The white top emission type organic light emitting diode according to claim 1, wherein: the material of the light out-coupling layer was m-MTDATA with a thickness of 40 nm.
7. the method for preparing the white top-emitting organic light-emitting diode according to claim 1, wherein the method comprises the following steps: the method comprises the following steps:
Cleaning the substrate, namely cleaning a glass substrate as the substrate, putting the glass substrate into a vacuum evaporation chamber, and vacuumizing to more than 5 multiplied by 10 - 4 Pa;
Evaporating a reflective anode: evaporating a reflective anode at a deposition rate of 0.1 nm/S;
Evaporating a hole injection layer: firstly, evaporating a MoOx layer by using a single-component organic material MoOx, and then evaporating an m-MTDATA layer by using a single-component organic material m-MTDATA;
Evaporating a hole transport layer: evaporating an NPB layer by adopting a single-component organic material;
Evaporating and plating the double blue light emitting layers: evaporating a hole blue layer by adopting a hole type host material and a blue light object material, and evaporating an electronic type blue layer by adopting an electronic type host material and a blue light object material;
Evaporating a red light emitting layer: preparing the red light emitting layer by co-evaporation of a red light guest material and a green light guest material;
Evaporating an electron transport layer: the material is prepared by adopting a single-component organic material BPhen through evaporation;
Evaporating a semitransparent cathode: firstly, Sm is evaporated; then, Ag is evaporated, and the deposition rate of Sm and Ag is 0.1nm/S during evaporation;
Evaporating a light coupling-out layer: is prepared by vapor deposition of single-component organic material m-MTDATA.
8. The method of claim 7, wherein the hole host material is TCTA, the blue guest material is phosphorescent blue light material FIrpic, the electron host material is SPPO, the red guest material is phosphorescent red light material Ir (MDQ) 2 (acac), and the green guest material is phosphorescent green light material Ir (ppy) 3.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022157A (en) * | 2007-03-21 | 2007-08-22 | 吉林大学 | Organic electroluminescent white light device with multi-luminescent layer |
| CN101170853A (en) * | 2007-11-23 | 2008-04-30 | 电子科技大学 | A white light organic EL part consisting of RGB and its making method |
| CN101630721A (en) * | 2009-08-11 | 2010-01-20 | 昆山维信诺显示技术有限公司 | Organic electroluminescent component |
| CN104124391A (en) * | 2014-03-24 | 2014-10-29 | 南京邮电大学 | White light top emission type OLED (organic light emitting diodes) and preparation method thereof |
| CN105449108A (en) * | 2015-12-03 | 2016-03-30 | 工业和信息化部电子第五研究所 | Hybrid white-light organic electroluminescence device and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206754A (en) * | 2015-09-30 | 2015-12-30 | 云南大学 | Color-temperature-adjustable high-color-rendering-index WOLED device and adjusting principle thereof |
-
2016
- 2016-04-01 CN CN201610198975.9A patent/CN107293645B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022157A (en) * | 2007-03-21 | 2007-08-22 | 吉林大学 | Organic electroluminescent white light device with multi-luminescent layer |
| CN101170853A (en) * | 2007-11-23 | 2008-04-30 | 电子科技大学 | A white light organic EL part consisting of RGB and its making method |
| CN101630721A (en) * | 2009-08-11 | 2010-01-20 | 昆山维信诺显示技术有限公司 | Organic electroluminescent component |
| CN104124391A (en) * | 2014-03-24 | 2014-10-29 | 南京邮电大学 | White light top emission type OLED (organic light emitting diodes) and preparation method thereof |
| CN105449108A (en) * | 2015-12-03 | 2016-03-30 | 工业和信息化部电子第五研究所 | Hybrid white-light organic electroluminescence device and preparation method thereof |
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