CN107293618A - Light emitting diode epitaxial wafer and preparation method thereof - Google Patents
Light emitting diode epitaxial wafer and preparation method thereof Download PDFInfo
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- CN107293618A CN107293618A CN201710520203.7A CN201710520203A CN107293618A CN 107293618 A CN107293618 A CN 107293618A CN 201710520203 A CN201710520203 A CN 201710520203A CN 107293618 A CN107293618 A CN 107293618A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 76
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 56
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 55
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000004411 aluminium Substances 0.000 claims description 50
- 238000003475 lamination Methods 0.000 claims description 43
- 230000012010 growth Effects 0.000 claims description 41
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 35
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 33
- 238000007788 roughening Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 28
- 229910021529 ammonia Inorganic materials 0.000 claims description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 16
- 229910052594 sapphire Inorganic materials 0.000 abstract description 16
- 239000010980 sapphire Substances 0.000 abstract description 16
- 230000007547 defect Effects 0.000 abstract description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract description 5
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 description 11
- 229910052738 indium Inorganic materials 0.000 description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 11
- 238000000407 epitaxy Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a non-doped gallium nitride layer, an N-type gallium nitride layer, a multi-quantum well layer and a P-type gallium nitride layer which are sequentially stacked on the substrate, wherein the buffer layer comprises at least one sublayer with a coarsening structure, and the sublayer comprises an aluminum layer, an aluminum nitride layer and an aluminum gallium nitrogen layer which are sequentially stacked. According to the invention, the buffer layer is designed to comprise at least one sublayer with a coarsening structure, the sublayers comprise the aluminum layer, the aluminum nitride layer and the aluminum gallium nitride layer which are sequentially laminated, the lattice mismatch between the sapphire substrate and the gallium nitride material can be gradually relieved, the relieving capability is higher than that of the aluminum nitride buffer layer, the dislocation density is reduced, the epitaxial defect is reduced, and the crystal quality is improved. And the sub-layer has a coarsening structure, so that epitaxial defects can be further reduced, and the crystal quality is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of LED epitaxial slice and preparation method thereof.
Background technology
Light emitting diode (English：Light Emitting Diode, referred to as：LED) chip is that one kind can be directly electricity
The solid-state semiconductor device of light is converted into, its electrode for including epitaxial wafer and being made on epitaxial wafer.
Existing epitaxial wafer includes Sapphire Substrate and stacks gradually aluminum nitride buffer layer on a sapphire substrate, non-
Doped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer and p-type gallium nitride layer.Wherein, multiple quantum well layer includes multiple quantum
Well layer and multiple quantum barrier layers, multiple quantum well layers and multiple quantum barrier layers are alternately laminated, and quantum well layer is indium gallium nitrogen layer, quantum
Barrier layer is gallium nitride layer.
During the present invention is realized, inventor has found that prior art at least has problems with：
Sapphire lattice constant is much larger than the lattice constant of gallium nitride, can be produced between Sapphire Substrate and gallium nitride material
Raw serious lattice mismatch, forms higher dislocation density, influences crystal mass.Although aluminum nitride buffer layer has certain delay
Solution ability, but crystal mass or poor.
The content of the invention
In order to solve the problem of prior art crystal mass is poor, the embodiments of the invention provide a kind of LED epitaxial
Piece and preparation method thereof.The technical scheme is as follows：
On the one hand, the embodiments of the invention provide a kind of LED epitaxial slice, the LED epitaxial slice bag
Include substrate and stack gradually cushion over the substrate, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer
With p-type gallium nitride layer, the cushion includes the sublayer that at least one has roughening structure, and the sublayer includes what is stacked gradually
Aluminium lamination, aln layer and gallium nitride layer.
Alternatively, the quantity of the sublayer is 2~10, and each described sublayer is stacked gradually over the substrate.
Alternatively, the thickness of the aluminium lamination is 5nm~30nm.
Alternatively, the thickness of the aln layer is 5nm~30nm.
Alternatively, the thickness of the gallium nitride layer is 5nm~30nm.
On the other hand, the embodiments of the invention provide a kind of preparation method of LED epitaxial slice, the preparation side
Method includes：
One substrate is provided；
Cushion, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer and p-type are sequentially formed over the substrate
Gallium nitride layer, the cushion include at least one have roughening structure sublayer, the sublayer include stack gradually aluminium lamination,
Aln layer and gallium nitride layer.
Alternatively, the forming process of the sublayer includes：
It is passed through after trimethyl aluminium, trimethyl aluminium Pintsch process to be formed on substrate under pure hydrogen atmosphere and there is roughening structure
Aluminium lamination；
Stopping is passed through trimethyl aluminium, and high-temperature process is carried out to the aluminium lamination；
It is passed through ammonia to nitrogenize the surface of the aluminium lamination, forms the aln layer with roughening structure；
Stopping is passed through ammonia, and high-temperature process is carried out to the aln layer；
Trimethyl aluminium, nitrogen and trimethyl gallium are passed through, Al-Ga-N material is deposited on the aln layer, being formed has slightly
Change the gallium nitride layer of structure.
Alternatively, the forming process of the sublayer includes：
It is passed through after trimethyl aluminium, trimethyl aluminium Pintsch process to be formed on substrate under pure hydrogen atmosphere and there is roughening structure
Aluminium lamination；
Stopping is passed through trimethyl aluminium, and high-temperature process is carried out to the aluminium lamination；
Trimethyl aluminium and ammonia are passed through, the cvd nitride aluminum on the aluminium lamination forms the nitridation with roughening structure
Aluminium lamination；
Stopping is passed through ammonia, and high-temperature process is carried out to the aln layer；
Trimethyl aluminium, nitrogen and trimethyl gallium are passed through, Al-Ga-N material is deposited on the aln layer, being formed has slightly
Change the gallium nitride layer of structure.
Alternatively, the growth temperature of the sublayer is 600 DEG C~1000 DEG C.
Alternatively, the growth pressure of the sublayer is 300mbar~500mbar.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
By being to include at least one sublayer with roughening structure by layer buffer design, sublayer includes the aluminium stacked gradually
Layer, aln layer and gallium nitride layer, can progressively alleviate the lattice mismatch between Sapphire Substrate and gallium nitride material, alleviate energy
Power is reduced than aln buffer floor height, dislocation density reduction, epitaxy defect, and crystal mass is improved.And there is sublayer roughening to tie
Structure, can further reduce epitaxy defect, improve crystal mass.In addition, aluminium lamination, aln layer, gallium nitride layer and gallium nitride layer
Refractive index it is different, the light of directive Sapphire Substrate can repeatedly be reflected in interface, add aluminium lamination have it is higher
Albedo, the light of directive Sapphire Substrate can be reflected, the positive light extraction efficiency of increase epitaxial wafer.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, makes required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation for LED epitaxial slice that the embodiment of the present invention one is provided；
Fig. 2 is the structural representation for the cushion that the embodiment of the present invention one is provided；
Fig. 3 is a kind of flow chart of the preparation method for LED epitaxial slice that the embodiment of the present invention two is provided；
Fig. 4 is a kind of flow chart of the preparation method for LED epitaxial slice that the embodiment of the present invention three is provided.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiments of the invention provide a kind of LED epitaxial slice, referring to Fig. 1, the epitaxial wafer include substrate 1 and
Stack gradually cushion 2, undoped gallium nitride layer 3, n type gallium nitride layer 4, multiple quantum well layer 5 and p-type nitridation on substrate 1
Gallium layer 6.
In the present embodiment, referring to Fig. 2, cushion 2 includes the sublayer 20 that at least one has roughening structure, and sublayer 20 is wrapped
Include the aluminium lamination 21 stacked gradually, aln layer 22 and gallium nitride layer 23.
The embodiment of the present invention is by being to include at least one sublayer with roughening structure by layer buffer design, and sublayer includes
Aluminium lamination, aln layer and the gallium nitride layer stacked gradually, can progressively alleviate the crystalline substance between Sapphire Substrate and gallium nitride material
Lattice mismatch, relief capabilities are reduced than aln buffer floor height, dislocation density reduction, epitaxy defect, and crystal mass is improved.And son
Layer has roughening structure, can further reduce epitaxy defect, improves crystal mass.In addition, aluminium lamination, aln layer, aluminum gallium nitride
The refractive index of layer and gallium nitride layer is different, and the light of directive Sapphire Substrate can repeatedly be reflected in interface, be added
Aluminium lamination has higher albedo, can reflect the light of directive Sapphire Substrate, the positive light extraction efficiency of increase epitaxial wafer.
Alternatively, the quantity of sublayer 20 can be 2~10, and each sublayer 20 is stacked gradually on substrate 1.If sublayer
20 quantity is less than 2, then the DeGrain that defect is reduced and emissivity is improved；If the quantity of sublayer 20 is more than 20,
Overall crystal mass can be influenceed.
Alternatively, the thickness of aluminium lamination 21 can be 5nm~30nm.If the thickness of aluminium lamination 21 be less than 5nm, defect reduce and
The DeGrain that emissivity is improved；If the thickness of aluminium lamination 21 is more than 30nm, overall crystal mass can be influenceed.
Alternatively, the thickness of aln layer 22 can be 5nm~30nm.If the thickness of aln layer 22 is less than 5nm, lack
Fall into the DeGrain for reducing and being improved with emissivity；If the thickness of aln layer 22 is more than 30nm, overall crystal can be influenceed
Quality.
Alternatively, the thickness of gallium nitride layer 23 can be 5nm~30nm.If the thickness of gallium nitride layer 23 is less than 5nm, lack
Fall into the DeGrain for reducing and being improved with emissivity；If the thickness of gallium nitride layer 23 is more than 30nm, overall crystal can be influenceed
Quality.
Specifically, substrate can be Sapphire Substrate；Multiple quantum well layer includes multiple indium gallium nitrogen quantum well layers and multiple nitrogen
Change gallium quantum barrier layer, multiple indium gallium nitrogen quantum well layers and the alternately laminated setting of multiple gallium nitride quantum barrier layers.
More specifically, the thickness of undoped gallium nitride layer can be 1.5 μm~2.5 μm；The thickness of n type gallium nitride layer can be with
For 0.5 μm~1.5 μm；The thickness of indium gallium nitrogen quantum well layer can be 2nm~4nm, and the thickness of gallium nitride quantum barrier layer can be
10nm~15nm, the quantity of gallium nitride quantum barrier layer is identical with the quantity of indium gallium nitrogen quantum well layer, the number of indium gallium nitrogen quantum well layer
Amount can be 10~15；The thickness of p-type gallium nitride layer can be 1.5 μm~2.5 μm.
Embodiment two
The embodiments of the invention provide a kind of preparation method of LED epitaxial slice, it is adaptable to prepares embodiment one and carries
The epitaxial wafer of confession.Referring to Fig. 3, the preparation method includes：
Step 201：One substrate is provided.
Step 202：Cushion, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer are sequentially formed on substrate
With p-type gallium nitride layer.
Wherein, cushion includes the sublayer that at least one has roughening structure, and sublayer includes aluminium lamination, the nitridation stacked gradually
Aluminium lamination and gallium nitride layer.
The embodiment of the present invention is by being to include at least one sublayer with roughening structure by layer buffer design, and sublayer includes
Aluminium lamination, aln layer and the gallium nitride layer stacked gradually, can progressively alleviate the crystalline substance between Sapphire Substrate and gallium nitride material
Lattice mismatch, relief capabilities are reduced than aln buffer floor height, dislocation density reduction, epitaxy defect, and crystal mass is improved.And son
Layer has roughening structure, can further reduce epitaxy defect, improves crystal mass.In addition, aluminium lamination, aln layer, aluminum gallium nitride
The refractive index of layer and gallium nitride layer is different, and the light of directive Sapphire Substrate can repeatedly be reflected in interface, be added
Aluminium lamination has higher albedo, can reflect the light of directive Sapphire Substrate, the positive light extraction efficiency of increase epitaxial wafer.
In a kind of implementation of the present embodiment, the forming process of sublayer can include：
It is passed through after trimethyl aluminium, trimethyl aluminium Pintsch process to be formed on substrate under pure hydrogen atmosphere and there is roughening structure
Aluminium lamination；
Stopping is passed through trimethyl aluminium, and high-temperature process is carried out to aluminium lamination；
It is passed through ammonia to nitrogenize the surface of aluminium lamination, forms the aln layer with roughening structure；
Stopping is passed through ammonia, and high-temperature process is carried out to aln layer；
Trimethyl aluminium, nitrogen and trimethyl gallium are passed through, Al-Ga-N material is deposited on aln layer, being formed has roughening knot
The gallium nitride layer of structure.
It is to be appreciated that stopping being passed through trimethyl aluminium, it is passed through surface progress nitridation of the ammonia to aluminium lamination and forms aln layer
Mode, it is only necessary to the flow of ammonia is controlled, it is more simple and convenient when realizing.
In another implementation of the present embodiment, the forming process of sublayer can include：
It is passed through after trimethyl aluminium, trimethyl aluminium Pintsch process to be formed on substrate under pure hydrogen atmosphere and there is roughening structure
Aluminium lamination；
Stopping is passed through trimethyl aluminium, and high-temperature process is carried out to aluminium lamination；
Trimethyl aluminium and ammonia are passed through, the cvd nitride aluminum on aluminium lamination forms the aln layer with roughening structure；
Stopping is passed through ammonia, and high-temperature process is carried out to aln layer；
Trimethyl aluminium, nitrogen and trimethyl gallium are passed through, Al-Ga-N material is deposited on aln layer, being formed has roughening knot
The gallium nitride layer of structure.
It should be noted that the growth course of film is first to carry out three dimensional growth, separate island structure is formed, is treated
When the thickness of island structure is reached to a certain degree, the gap between two neighboring island structure can be filled, wait to fill and lead up it
Carry out two-dimensional growth again afterwards, form planar structure.Thickness of the invention by limiting sublayer so that the growth of sublayer does not reach also
It is to terminate to two-dimensional growth, obtains the sublayer with roughening structure.
Alternatively, the growth temperature of sublayer can be 600 DEG C~1000 DEG C.If the growth temperature of sublayer is less than 600 DEG C,
Sublayer can not be crystallized, and crystal mass is poor；If the growth temperature of sublayer is higher than 1000 DEG C, the structure of cushion can be destroyed.
Alternatively, the growth pressure of sublayer can be 300mbar~500mbar.Nitrogenized under the growth pattern of high-temperature low-pressure
The growth quality of aluminium preferably, is more beneficial for alleviating defect and dislocation that lattice mismatch is caused
Specifically, the growth temperature of undoped gallium nitride layer can be 1200 DEG C~1250 DEG C, and growth pressure can be
200mbar~500mbar.The growth temperature of n type gallium nitride layer can be 1000 DEG C~1050 DEG C, and growth pressure can be
150mbar~300mbar.The growth temperature of indium gallium nitrogen quantum well layer can be 830 DEG C~880 DEG C, and growth pressure can be
200mbar~400mbar；The growth temperature of gallium nitride quantum barrier layer can be 920 DEG C~980 DEG C, and growth pressure can be
200mbar~400mbar.The growth temperature of p-type gallium nitride layer can be 1200 DEG C~1250 DEG C, and growth pressure can be
200mbar~600mbar.
Embodiment three
The embodiments of the invention provide the preparation side that a kind of preparation method of LED epitaxial slice, the present embodiment are provided
Method is that the one kind for the preparation method that embodiment two is provided is implemented.Referring to Fig. 4, the preparation method includes：
Step 301：Sapphire Substrate is carried out under 1300 DEG C of hydrogen atmosphere to the heat treatment of 10 minutes, to clean blue treasured
The surface at stone lining bottom.
Step 302a：It is 800 DEG C to control temperature, and pressure is 600mbar, and trimethyl aluminium, three are passed through under pure hydrogen atmosphere
The aluminium lamination with roughening structure is formed after aluminium methyl Pintsch process on substrate, the time is formed for 2min.
Step 302b：Stopping is passed through trimethyl aluminium, and it is 950 DEG C to control temperature, the high-temperature process carried out to aluminium lamination, during processing
Between be 1min.
Step 302c：It is 850 DEG C to control temperature, is passed through trimethyl aluminium and ammonia, the cvd nitride aluminum on aluminium lamination, shape
Into the aln layer with roughening structure, the reaction time is 2min.
Step 302d：Stopping is passed through ammonia, and it is 950 DEG C to control temperature, and high-temperature process, processing time are carried out to aln layer
For 1min.
Step 302e：It is 900 DEG C to control temperature, is passed through trimethyl aluminium, nitrogen and trimethyl gallium, is deposited on aln layer
Al-Ga-N material, forms the gallium nitride layer with roughening structure, the reaction time is 2min.
Step 303：It is 1200 DEG C to control growth temperature, and growth pressure is 300mbar, and growth thickness is 2 μ on the buffer layer
M undoped gallium nitride layer.
Step 304：It is 1025 DEG C to control growth temperature, and growth pressure is 225mbar, is grown on undoped gallium nitride layer
N type gallium nitride layer.
Step 305：It is 300mbar to control growth pressure, and multiple quantum well layer is grown on n type gallium nitride layer.
In the present embodiment, multiple quantum well layer includes multiple indium gallium nitrogen quantum well layers and multiple gallium nitride quantum barrier layers, many
Individual indium gallium nitrogen quantum well layer and the alternately laminated setting of multiple gallium nitride quantum barrier layers.The thickness of indium gallium nitrogen quantum well layer is 3nm, raw
Long temperature is 850 DEG C；The thickness of gallium nitride quantum barrier layer is 12nm, and growth temperature is 950 DEG C.
Step 306：It is 1240 DEG C to control growth temperature, and growth pressure is 350mbar, the growth thickness on multiple quantum well layer
For 300nm p-type gallium nitride layer.
In the present embodiment, whole process is using metallo-organic compound chemical gaseous phase deposition (English：Meta1
Organic Chemical Vapor Deposition, referred to as：MOCVD) reaction chamber is realized, high-purity hydrogen is used when realizing
(H2) or nitrogen (N2) it is used as carrier gas, using trimethyl gallium (TMGa) as gallium source, high-purity ammonia (NH3) it is used as nitrogen source, trimethyl
Indium is as indium source, and trimethyl aluminium is as silicon source, and N type dopant selects silane, and P-type dopant is from two luxuriant magnesium.
In other embodiments, in the quantity of sublayer, sublayer in the thickness of each layer, sublayer each layer growth temperature, sublayer
In the growth pressure of each layer and the parameter such as growth temperature, growth pressure and thickness of other each layers can also take other values, this
Invention is not intended to limit the numerical value in the present embodiment.
It can also be 10 for example, the quantity of sublayer can be 2, or 5；The thickness of aluminium lamination can in sublayer
Think 5nm, can also 17.5nm, can also be 30nm；In sublayer the thickness of aln layer can be 5nm, can also 17.5nm,
Can also be 30nm；In sublayer the thickness of gallium nitride layer can be 5nm, can also 17.5nm, can also be 30nm；Aluminium in sublayer
The growth temperature of layer can be 600 DEG C, can also be 800 DEG C, or 1000 DEG C；The growth temperature of aln layer can in sublayer
Think 600 DEG C, can also be 850 DEG C, or 1000 DEG C；The growth temperature of gallium nitride layer can be 600 DEG C in sublayer, also may be used
With 900 DEG C, or 1000 DEG C.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes substrate and is sequentially laminated on the substrate
On cushion, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer and p-type gallium nitride layer, it is characterised in that it is described
Cushion includes the sublayer that at least one has roughening structure, and the sublayer includes aluminium lamination, aln layer and the aluminium stacked gradually
Gallium nitrogen layer.
2. LED epitaxial slice according to claim 1, it is characterised in that the quantity of the sublayer is 2~10
Individual, each described sublayer is stacked gradually over the substrate.
3. LED epitaxial slice according to claim 1 or 2, it is characterised in that the thickness of the aluminium lamination be 5nm~
30nm。
4. LED epitaxial slice according to claim 1 or 2, it is characterised in that the thickness of the aln layer is
5nm~30nm.
5. LED epitaxial slice according to claim 1 or 2, it is characterised in that the thickness of the gallium nitride layer is
5nm~30nm.
6. a kind of preparation method of LED epitaxial slice, it is characterised in that the preparation method includes：
One substrate is provided；
Cushion, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer and p-type nitridation are sequentially formed over the substrate
Gallium layer, the cushion includes the sublayer that at least one has roughening structure, and the sublayer includes aluminium lamination, the nitridation stacked gradually
Aluminium lamination and gallium nitride layer.
7. preparation method according to claim 6, it is characterised in that the forming process of the sublayer includes：
It is passed through under pure hydrogen atmosphere after trimethyl aluminium, trimethyl aluminium Pintsch process and the aluminium with roughening structure is formed on substrate
Layer；
Stopping is passed through trimethyl aluminium, and high-temperature process is carried out to the aluminium lamination；
It is passed through ammonia to nitrogenize the surface of the aluminium lamination, forms the aln layer with roughening structure；
Stopping is passed through ammonia, and high-temperature process is carried out to the aln layer；
Trimethyl aluminium, nitrogen and trimethyl gallium are passed through, Al-Ga-N material is deposited on the aln layer, being formed has roughening knot
The gallium nitride layer of structure.
8. preparation method according to claim 6, it is characterised in that the forming process of the sublayer includes：
It is passed through under pure hydrogen atmosphere after trimethyl aluminium, trimethyl aluminium Pintsch process and the aluminium with roughening structure is formed on substrate
Layer；
Stopping is passed through trimethyl aluminium, and high-temperature process is carried out to the aluminium lamination；
Trimethyl aluminium and ammonia are passed through, the cvd nitride aluminum on the aluminium lamination forms the aln layer with roughening structure；
Stopping is passed through ammonia, and high-temperature process is carried out to the aln layer；
Trimethyl aluminium, nitrogen and trimethyl gallium are passed through, Al-Ga-N material is deposited on the aln layer, being formed has roughening knot
The gallium nitride layer of structure.
9. the preparation method according to claim 7 or 8, it is characterised in that the growth temperature of the sublayer is 600 DEG C~
1000℃。
10. the preparation method according to claim 7 or 8, it is characterised in that the growth pressure of the sublayer is 300mbar
~500mbar.
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Application publication date: 20171024 |