CN107293593A - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- CN107293593A CN107293593A CN201710587700.9A CN201710587700A CN107293593A CN 107293593 A CN107293593 A CN 107293593A CN 201710587700 A CN201710587700 A CN 201710587700A CN 107293593 A CN107293593 A CN 107293593A
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- layer
- display panel
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- barrier
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- 230000004888 barrier function Effects 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 239000000463 material Substances 0.000 claims abstract description 69
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 14
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 316
- 238000002161 passivation Methods 0.000 claims description 38
- 239000000084 colloidal system Substances 0.000 claims description 23
- 239000011229 interlayer Substances 0.000 claims description 21
- 239000012212 insulator Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 38
- 239000001301 oxygen Substances 0.000 abstract description 38
- 229910052760 oxygen Inorganic materials 0.000 abstract description 38
- 239000010409 thin film Substances 0.000 abstract description 13
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 42
- 238000000034 method Methods 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- -1 cushion Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a display panel and a display device, which are provided with a display area and a non-display area surrounding the display area, and comprise: the first substrate comprises a first substrate base plate, a thin film transistor device layer and a first electrode layer which are sequentially arranged, wherein the thin film transistor device layer comprises a semiconductor layer, and the material of the semiconductor layer comprises metal oxide; at least one insulating layer is arranged between the semiconductor layer and the first electrode layer; the non-display area comprises at least one groove, the at least one groove is arranged in the at least one insulating layer, and the groove is arranged around the display area; the surface of the groove is provided with a first barrier layer. The recess and first barrier layer can the separation material such as steam and oxygen, prevent that material such as steam and oxygen from further invading to display panel inside, for prior art, can improve the ability that material such as display panel anti steam and oxygen corrodes, improve display panel's display quality, extension display panel's life.
Description
Technical field
The present invention relates to display technology field, more particularly, to a kind of display panel and display device.
Background technology
The a type of display panel that prior art is provided has used thin film transistor (TFT) (Thin Film
Transistor, abbreviation TFT) technology.Increasing, the market demand share in particular with influence of the display panel in life
Increase sharply, therefore it provides high display quality, the display panel of service life length are the directions of technology development.
The basic structure of thin film transistor (TFT) is generally included：Semiconductor layer, grid, source electrode and drain electrode, wherein, grid, source electrode
Made with drain electrode usually using metal material, semiconductor layer can use the material systems such as non-crystalline silicon, polysilicon, metal oxide
Make.Fig. 1 is refer to, Fig. 1 is a kind of cross-sectional view for display panel that prior art is provided.The one of prior art offer
Plant in display panel, including underlay substrate 01, cushion 02 and the thin film transistor (TFT) being arranged on cushion 02, wherein thin
Film transistor includes semiconductor layer 03, source electrode 04 and drain electrode 05, grid 06, and source electrode 04 and drain electrode 05, which are used, is arranged on same film
Layer；In addition, be provided between semiconductor layer 03 and grid 06 gate insulator 07, grid 06 and source electrode 04 (drain electrode 05) it
Between be provided with the first insulating barrier 08 and the second insulating barrier 09.Wherein, the material of semiconductor layer 03 is indium gallium zinc oxide (Indium
Gallium Zinc Oxide, abbreviation IGZO).In order to ensure IGZO characteristic of semiconductor, the technique behind semiconductor layer 03
The gate insulator 07 of middle making, the first insulating barrier 08 and the second insulating barrier 09 typically use lower temperature film forming, and then cause
Its compactness is not enough, completes easily by extraneous steam and oxygen etc. to be entered after display panel, so as to corrode the internal membrane of display panel
Rotating fields, cause bad, display panel the lost of life of display.
The content of the invention
In view of this, the invention provides a kind of display panel, the non-display area with viewing area and around viewing area, bag
Include：First substrate, first substrate includes the first underlay substrate, film transistor device layer, first electrode layer set gradually, thin
Film transistor device layer includes semiconductor layer, and the material of semiconductor layer includes metal oxide；Semiconductor layer and first electrode layer
Between include at least one layer of insulating barrier；Non-display area includes at least one groove, and at least one groove is arranged at least one layer of exhausted
In edge layer, groove is set around viewing area；Groove surfaces are provided with the first barrier layer.
In some optional embodiments, the material of the first barrier layer includes transparent metal oxide.
In some optional embodiments, the first barrier layer is identical with the material of first electrode layer.
In some optional embodiments, at least one groove includes the first groove and the second groove, at least one layer insulation
Layer includes the first insulating barrier and the second insulating barrier；First groove is arranged in the first insulating barrier, and it is exhausted that the second groove is arranged on second
In edge layer.
In some optional embodiments, display panel also includes second substrate, and second substrate is relative with first substrate to be set
Put；Non-display area includes colloid, and colloid is set around viewing area, and colloid is used to bond first substrate and second substrate；Groove is set
The side surface close to second substrate in first substrate is put, groove includes part colloid.
In some optional embodiments, liquid crystal layer, first substrate, second are provided between first substrate and second substrate
Substrate, colloid formation confined space are used to accommodate liquid crystal layer.
In some optional embodiments, at least one layer of insulating barrier includes passivation layer, and first substrate also includes gate insulator
Layer and the second electrode lay；Film transistor device layer also includes grid layer, etching barrier layer, source-drain electrode layer；First underlay substrate,
Grid layer, gate insulator, semiconductor layer, etching barrier layer, source-drain electrode layer, the second electrode lay, passivation layer, first electrode layer edge
First underlay substrate is set gradually towards the direction of first electrode layer；Wherein, passivation layer includes at least one groove.
In some optional embodiments, display panel also includes the second barrier layer, and it is exhausted that the second barrier layer is arranged on grid
Between edge layer and passivation layer；Second barrier layer is arranged on non-display area, and the second barrier layer is set around viewing area；First barrier layer
Identical with the material of first electrode layer, the second barrier layer is identical with the material of the second electrode lay.
In some optional embodiments, at least one layer of insulating barrier includes interlayer insulating film and passivation layer, and first substrate is also
Including cushion, gate insulator, the second electrode lay；Film transistor device layer also includes grid layer, source-drain electrode layer；First lining
Substrate, cushion, semiconductor layer, gate insulator, grid layer, interlayer insulating film, the second electrode lay, source-drain electrode layer, passivation
Layer, direction of the first electrode layer along the first underlay substrate towards first electrode layer are set gradually.
In some optional embodiments, interlayer insulating film includes at least one groove.
In some optional embodiments, passivation layer includes at least one groove.
In some optional embodiments, the width of orthographic projection of the groove on the first underlay substrate is d1, and 10 μm≤
d1≤50um。
In some optional embodiments, first substrate also includes multiple Organic Light Emitting Diodes；Organic Light Emitting Diode
Including the anode and negative electrode being oppositely arranged；First barrier layer is identical with the material of anode.
The present invention also provides a kind of display device, including the display panel that the present invention is provided.
Compared with prior art, the present invention is provided display panel and display device, at least realize following beneficial effect
Really：
In display panel and display device that the present invention is provided, film transistor device layer includes semiconductor layer, semiconductor
The material of layer includes metal oxide, at least one layer of insulating barrier is included between semiconductor layer and first electrode layer, in other words, this is extremely
A few layer insulating is made in the technique behind semiconductor layer.It is provided with least at least one layer of insulating barrier
One groove, groove is set around viewing area, and groove surfaces are provided with the first barrier layer.When the steam that display panel is extraneous
Enter fashionable by least one layer of insulating barrier with the material such as oxygen, groove can be run into, and groove surfaces have the first barrier layer, it is recessed
Groove and the first barrier layer can obstruct the materials such as steam and oxygen, prevent the materials such as steam and oxygen from further invading to display surface
Intralamellar part, film layer structure of the protection groove in the side of viewing area.Relative to prior art, display panel water resistant can be improved
The ability that the material such as vapour and oxygen corrodes, improves the display quality of display panel, extends the service life of display panel.
By referring to the drawings to the detailed description of the exemplary embodiment of the present invention, further feature of the invention and its
Advantage will be made apparent from.
Brief description of the drawings
The accompanying drawing for being combined in the description and constituting a part for specification shows embodiments of the invention, and even
It is used for the principle for explaining the present invention together with its explanation.
Fig. 1 is a kind of cross-sectional view for display panel that prior art is provided；
Fig. 2 is a kind of planar structure schematic diagram of display panel provided in an embodiment of the present invention；
Fig. 3 is a kind of cross-sectional view of first substrate in the display panel that Fig. 2 embodiments are provided；
A kind of cross-sectional view of first substrate in Fig. 4 display panels provided in an embodiment of the present invention；
Fig. 5 is the planar structure schematic diagram of another display panel provided in an embodiment of the present invention；
Fig. 6 is another cross-sectional view of first substrate in display panel provided in an embodiment of the present invention；
Fig. 7 is another cross-sectional view of first substrate in display panel provided in an embodiment of the present invention；
Fig. 8 is the planar structure schematic diagram that the embodiment of the present invention provides another display panel；
Fig. 9 is a kind of cross-sectional view for the display panel that Fig. 8 embodiments are provided；
Figure 10 is the planar structure schematic diagram that the embodiment of the present invention provides another display panel；
Figure 11 is a kind of cross-sectional view of first substrate in the display panel that Figure 10 embodiments are provided；
Figure 12 is another cross-sectional view of first substrate in display panel provided in an embodiment of the present invention；
Figure 13 is another cross-sectional view of first substrate in display panel provided in an embodiment of the present invention.
Figure 14 is a kind of schematic diagram of display device provided in an embodiment of the present invention.
Embodiment
The various exemplary embodiments of the present invention are described in detail now with reference to accompanying drawing.It should be noted that：Unless had in addition
Body illustrates that the part and the positioned opposite of step, numerical expression and numerical value otherwise illustrated in these embodiments does not limit this
The scope of invention.
The description only actually at least one exemplary embodiment is illustrative below, never as to the present invention
And its any limitation applied or used.
It may be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as a part for specification.
In shown here and discussion all examples, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined, then it need not be further discussed in subsequent accompanying drawing in individual accompanying drawing.
Incorporated by reference to referring to figs. 2 and 3 Fig. 2 is a kind of planar structure signal of display panel provided in an embodiment of the present invention
Figure, Fig. 3 is a kind of cross-sectional view of first substrate in the display panel that Fig. 2 embodiments are provided.Present embodiments provide
A kind of display panel, with viewing area AA and around viewing area AA non-display area BB, display panel includes：First substrate 100,
First substrate 100 includes the first underlay substrate 10, film transistor device layer 20, first electrode layer 30, film set gradually
Transistor device layer 20 includes semiconductor layer 21, and the material of semiconductor layer 21 includes metal oxide；Semiconductor layer 21 and first
Include at least one layer of insulating barrier 40 between electrode layer 30；Non-display area BB includes at least one groove 41, at least one groove 41
It is arranged at least one layer of insulating barrier 40, groove 41 is set around viewing area AA；The surface of groove 41 is provided with the first barrier layer 42.
The display panel that the present embodiment is provided has viewing area AA and non-display area BB, and viewing area AA has display image letter
The function of breath, non-display area BB is set around viewing area AA, and non-display area BB does not have display function, for setting signal cabling
With the structure such as electronic component.
The display panel that the present embodiment is provided includes first substrate 100, optionally, and display panel can also include other knots
Structure.For example, in some optional implementations, display panel can also have the opposed base being oppositely arranged with first substrate
Plate, counter substrate can be glass substrate, and counter substrate can also have the structures such as color blocking, electrode, and the present embodiment is not made to this
Concrete restriction；In other optional implementations, display panel can be with encapsulated layer, and encapsulated layer is arranged on first substrate 100
Surface, the internal structure for protecting first substrate 100.
In the present embodiment, first substrate 100 includes the first underlay substrate 10 set, and the material of the first underlay substrate 10 can
Think hard, for example, be made using glass, or be flexible, for example, formed using plastic production, the present embodiment
This is not specifically limited.First substrate 100 also includes film transistor device layer 20, and film transistor device layer 20 includes half
Conductor layer 21, the material of semiconductor layer 21 includes metal oxide, and such as material of semiconductor layer 21 includes indium gallium zinc oxide.
IGZO is a kind of amorphous oxides containing indium, gallium and zinc, and carrier mobility is 20~30 times of non-crystalline silicon, can be carried significantly
High thin film transistor (TFT) improves the response speed of pixel, faster refresh rate is realized, while more to the charge-discharge velocity of pixel electrode
Fast response also substantially increases the line scanning rate of pixel.Multiple thin film transistor (TFT)s are provided with film transistor device layer 20
201, in addition to semiconductor layer 21, thin film transistor (TFT) 201 also includes grid 22, source electrode 23 and drain electrode 24.In the present embodiment, with grid
22 are arranged on semiconductor layer 21 illustrates exemplified by the side of the first underlay substrate 10, in other optional implementations
In, semiconductor layer 21 can be arranged on close to the side of the first underlay substrate 10 with grid 22, the present embodiment is not made specifically to this
Limitation.First substrate 100 also includes first electrode layer 30, and first electrode layer 30 has conductive function, can include pixel electricity
Pole, public electrode or touch control electrode, the present embodiment are not specifically limited to the concrete structure and function of the first motor layer 30.
Include at least one layer of insulation in the display panel that the present embodiment is provided, between semiconductor layer 21 and first electrode layer 30
In 40, Fig. 3 of layer, only illustrated exemplified by including a layer insulating 40 between semiconductor layer 21 and first electrode layer 30, at it
In his optional implementation, two layers or more layer insulatings can be included between semiconductor layer 21 and first electrode layer 30.
Insulating barrier 40 is arranged between semiconductor layer 21 and first electrode layer 30, according to the fabrication processing of first substrate 100, in lining
Made on substrate 10 after semiconductor layer 21, because the material of semiconductor layer 21 is metal oxide, therefore in semiconductor layer 21
Latter made film layer typically use lower temperature film forming, specifically, insulating barrier 40 use lower temperature film forming, its compactness is not
It is sufficient, more loose.In the present embodiment, at least one groove 41 is provided with insulating barrier 40, groove 41 is arranged on non-display area BB,
And groove 41 is set around viewing area AA, and in addition, the surface of groove 41 is provided with the first barrier layer 42.In Fig. 3, only with recessed
The quantity of groove 41 is one and illustrated, in other optional implementations, and the quantity of groove 41 can for two or more
Multiple, the present embodiment is not specifically limited to this., can by the section of groove 41 to illustrate exemplified by trapezoidal in Fig. 2 and Fig. 3
Choosing, the section of groove can be rectangle or other irregular figures, and the present embodiment is not made to have to the cross sectional shape of groove
Body is limited.First barrier layer 42 has the function of the barrier material such as steam and oxygen.Steam and oxygen outside display panel
Enter Deng the direction shown in material from arrow a after insulating barrier 40, the material such as part steam and oxygen can be hindered by groove 41 and first
Interlayer 42 is obstructed, and the barrier layer 42 of groove 41 and first can travel further into display panel with resistance steam and with the material such as oxygen
It is internal.
It should be noted that only being illustrated in the technical scheme in order to clearly illustrate the present embodiment, Fig. 2 and Fig. 3
The part-structure of display panel.Also, groove 41 is only illustrated in Fig. 2, the specific set-up mode of the first barrier layer 42 please join
Examine Fig. 3.
In the display panel that the present embodiment is provided, film transistor device layer includes semiconductor layer, the material of semiconductor layer
Include at least one layer of insulating barrier including metal oxide, between semiconductor layer and first electrode layer, in other words, at least one layer is absolutely
Edge layer is made in the technique behind semiconductor layer.It is recessed that at least one is provided with least one layer of insulating barrier
Groove, groove is set around viewing area, and groove surfaces are provided with the first barrier layer.When the steam and oxygen that display panel is extraneous
By at least one layer of insulating barrier enter fashionable Deng material, can run into groove, and groove surfaces have the first barrier layer, groove and the
One barrier layer can obstruct the materials such as steam and oxygen, prevent the materials such as steam and oxygen further in intrusion to display panel
Portion, film layer structure of the protection groove in the side of viewing area.Relative to prior art, can improve display panel water vapor and
The ability that the materials such as oxygen corrode, improves the display quality of display panel, extends the service life of display panel.
Optionally, please continue to refer to Fig. 2 and Fig. 3, the material of the first barrier layer 42 includes transparent metal oxide, transparent gold
Belong to oxide relative to metal, be generally difficult and the steam and oxygen reaction in air.For example, transparent metal oxide can be
Tin indium oxide or indium zinc oxide, wherein, tin indium oxide (Indium Tin Oxide, abbreviation ITO) alternatively referred to as mixes tin oxidation
Indium, is a kind of mixture of indium (III) oxide (In2O3) and tin (IV races) oxides (SnO2), tin indium oxide is in film
Be during shape it is transparent, it is electrically conductive, and relative to metal material, be difficult and the steam and oxygen reaction in air；Indium oxide
Zinc (Indium Zinc Oxide, abbreviation IZO), alternatively referred to as indium-doped zinc oxide, indium zinc oxide be in film-form it is transparent,
It is electrically conductive, and relative to metal material, be difficult and the steam and oxygen reaction in air.The material of first barrier layer 42 makes
With transparent metal oxide, for example, tin indium oxide or indium zinc oxide, can effectively obstruct the materials such as steam and oxygen.Can
Choosing, the first barrier layer 42 is identical with the material of first electrode layer 30, for example, the first barrier layer 42 and first electrode layer 30 can be with
During first substrate 100 is made, make and formed using same material, in same manufacturing process, the first barrier layer
42 are arranged in same film layer structure with first electrode layer 30.
It should be noted that in the display panel that Fig. 2 and Fig. 3 embodiments are provided, groove is set in a insulating layer, groove
Depth be the section of groove along length on the first underlay substrate direction, the embodiment of the present invention to the depth of groove not
Make concrete restriction.A kind of cross-section structure that refer to first substrate in Fig. 4, Fig. 4 display panels provided in an embodiment of the present invention shows
It is intended to.Fig. 4 is only illustrated on the basis of Fig. 3, and Fig. 4 has continued to use Fig. 3 reference.In Fig. 4, the depth of groove 41 is L,
Depth L is length of the section edge of groove 41 on the direction of the first underlay substrate 10, and the thickness of insulating barrier 40 is D.Its
In, L≤D, as groove 41 depth L can be less than the thickness D of insulating barrier 40, in addition, groove 41 may also extend through insulating barrier
40, i.e. L=D；, the present embodiment is not specifically limited to this.
In some optional implementations, Fig. 5 is refer to, Fig. 5 is another display surface provided in an embodiment of the present invention
The planar structure schematic diagram of plate.It should be noted that Fig. 5 is to look up display surface perpendicular to the side of the first underlay substrate
Obtained from plate.Wherein, the width of orthographic projection 411 of the groove on the first underlay substrate is d1, and 10 μm≤d1≤50um.Figure
In 5, groove has orthographic projection 411 on the first underlay substrate, and the width of orthographic projection 411 is d1, and the width of orthographic projection 411 is anti-
The width of groove is answered.In the display panel that the present embodiment is provided, the width of groove is unsuitable too small, too small to be unfavorable for making first
Barrier layer 42, therefore d1 minimum value is 10 μm；In order to adapt to the demand of narrow frame, the face of the non-display area 20 of display panel
Product is unsuitable excessive, therefore the width of groove is unsuitable excessive, and maximum is 50um.In the display panel that the present embodiment is provided, groove
The width of orthographic projection 411 on the first underlay substrate is d1, and 10 μm≤d1≤50um, it is ensured that display panel obstructs steam
With the function of the material such as oxygen, while meeting the demand of display panel narrow frame.
It should be noted that in the display panel that Fig. 2, Fig. 3 and Fig. 4 embodiment are provided, being entered using the quantity of groove as one
Row explanation, optionally, the quantity of groove can be two or more, refer to Fig. 6, and Fig. 6 is that the embodiment of the present invention is provided
Display panel in first substrate another cross-sectional view.Fig. 6 is only illustrated on the basis of Fig. 4, and Fig. 6 is continued to use
Fig. 4 reference.In Fig. 6, the quantity of groove 41 is two, is arranged in insulating barrier 40, the surface of groove 41 is provided with
First barrier layer 42.In the display panel that the present embodiment is provided, two grooves 41 are provided with insulating barrier 40, groove surfaces are set
There is the first barrier layer 42, the ability that display panel obstructs the material such as steam and oxygen can be improved, display panel is further improved
Display quality, extend display panel service life.
In some optional implementations, Fig. 7 is refer to, Fig. 7 is in display panel provided in an embodiment of the present invention
Another cross-sectional view of one substrate.Fig. 7 is only illustrated on the basis of Fig. 3, and Fig. 7 has continued to use Fig. 3 accompanying drawing mark
Note.In the display panel that Fig. 7 embodiments are provided, at least one groove includes the first groove 411 and the second groove 412, at least one
Layer insulating includes the first insulating barrier 401 and the second insulating barrier 402；First groove 411 is arranged in the first insulating barrier 401, the
Two grooves 412 are arranged in the second insulating barrier 402.It should be noted that in Fig. 7, according to the manufacture craft of first substrate, second
In addition to groove 412 is provided with the first barrier layer 42 except surface, it is also filled with what is made in subsequent technique processing procedure in the second groove 412
The part-structure of first insulating barrier 401.In the display panel that various embodiments of the present invention are provided, groove is provided with the first resistance except surface
Outside interlayer, the film layer structure formed in other materials, such as subsequent technique processing procedure can also be filled in groove, the present invention is right
This is not specifically limited.In the display panel that the present embodiment is provided, include two layers between semiconductor layer 21 and first electrode layer 30
In insulating barrier, respectively the first insulating barrier 401 and the second insulating barrier 402, the first insulating barrier 401 and the second insulating barrier 402 respectively
A groove, respectively the first groove 411 and the second groove 412 are provided with, groove surfaces are provided with the first barrier layer 42.Due to
Groove and the first barrier layer are provided with dielectric layers, the materials such as steam and oxygen can be prevented from the first insulating barrier 401
Invaded with further in the second insulating barrier 402 to display panel, film layer structure of the protection groove in the side of viewing area.
Relative to prior art, the ability of the materials such as display panel water vapor and oxygen erosion can be improved, the aobvious of display panel is improved
Show quality, extend the service life of display panel.In addition the embodiment of the present application is by the first insulating barrier 401 and the second insulating barrier 402
In groove shifted to install, while the first barrier layer 42 in the first groove 411 and the second groove 412 is closely connects
The integrative-structure connect, this structure is relative to the knot for forming the groove for directly running through the first insulating barrier 401 and the second insulating barrier 402
For structure, can significantly reduce the etching depth of groove so that the manufacture craft of groove can with existing panel
Manufacturing process is mutually compatible, without increasing new complex process steps, while relative to deeper groove, the embodiment of the present application also has
There is preparation technology simple, production efficiency and the higher advantage of process yields；Moreover, the structure of the embodiment of the present application is also with more bent
The steam of folding and oxygen transmission path, further increase the materials such as steam and oxygen from the first insulating barrier 401 and the second insulation
Further intrusion is to the difficulty inside display panel in layer 402, so as to further extend the life-span of display panel.
In some optional implementations, Fig. 8 and Fig. 9 are refer to, Fig. 8 is that the embodiment of the present invention provides another display
The planar structure schematic diagram of panel, Fig. 9 is a kind of cross-sectional view for the display panel that Fig. 8 embodiments are provided.In Fig. 2 and
On the basis for the display panel that Fig. 3 embodiments are provided, the display panel that the present embodiment is provided also includes second substrate 200, the
Two substrates 200 are oppositely arranged with first substrate 100；Non-display area BB includes colloid 300, and colloid 300 is set around viewing area AA,
Colloid 300 is used to bond first substrate 100 and second substrate 200；Groove 41 is arranged on first substrate 100 close to second substrate
200 side surface, groove 41 includes part colloid 300.In the display panel that the present embodiment is provided, groove 41 is arranged on the
One substrate 100 is close to a side surface of second substrate 200, and groove can be with accommodating portion colloid 300, on the one hand, work as making
During display panel, if colloid coating is excessive, groove can accommodate unnecessary colloid 300, colloid 300 is difficult spilling
To display panel；On the other hand, the thickness of the colloid 300 of the corresponding position of groove 41 is larger, and colloid 300 generally has anti-
The function of electrostatic, thus thicker colloid 300 can have the technique effect of more preferable antistatic.
Optionally, please continue to refer to Fig. 8 and Fig. 9, liquid crystal layer is provided between first substrate 100 and second substrate 200
400, first substrate 100, second substrate 200, the formation confined space of colloid 300 are used to accommodate liquid crystal layer 400.The present embodiment is provided
Display panel be liquid crystal display panel.
It should be noted that only being illustrated in the technical scheme in order to clearly illustrate the present embodiment, Fig. 8 and Fig. 9
The part-structure of display panel.Also, other in colloid 300, the display panel that the present embodiment is provided only are illustrated in Fig. 8 to tie
The specific set-up mode of structure refer to Fig. 9.
In some optional implementations, Figure 10 and Figure 11 are refer to, Figure 10 is that the embodiment of the present invention provides another
The planar structure schematic diagram of display panel, Figure 11 is a kind of cross-sectional view for the display panel that Figure 10 embodiments are provided.
On the basis of the display panel that Fig. 2 and Fig. 3 embodiments of the present invention are provided, in the display panel that the present embodiment is provided,
At least one layer of insulating barrier includes passivation layer 40a, and first substrate 100 also includes gate insulator 44 and the second electrode lay
50；Film transistor device layer 20 is in addition to including semiconductor layer 21, in addition to grid layer 22, etching barrier layer 25, source-drain electrode layer
234；First underlay substrate 10, grid layer 22, gate insulator 44, semiconductor layer 21, etching barrier layer 25, source-drain electrode layer 234,
The second electrode lay 50, passivation layer 40a, first electrode layer 30 along the first underlay substrate 10 towards the direction of first electrode layer 30 successively
Set；Wherein, passivation layer 40a includes at least one groove 41, and groove surfaces are provided with the first barrier layer 42.Wherein,
First underlay substrate 10 refer to the Z-direction in Figure 10 towards the direction of first electrode layer 30.
In the display panel that the present embodiment is provided, grid layer 22 is arranged on semiconductor layer 21 close to the first underlay substrate 10
Side, this structure is bottom gate thin film transistor.Source-drain electrode layer 234 can include source electrode and drain electrode (not illustrated in figure),
Part-structure in the second electrode lay 50 is electrically connected with drain electrode, optionally, and the second electrode lay 50 includes pixel electrode.Semiconductor layer
Include a layer insulating, as passivation layer 40a, passivation layer 40a cover film transistor devices between 21 and first electrode layer 30
It is thicker that layer 20, the technique effect with insulation, and passivation layer 40a are generally set, and can provide a relatively flat table
Face is to set first electrode layer 30.Passivation layer 40a is made in the technique behind semiconductor layer 21, and material is more dredged
Pine.It is provided with passivation layer 40a at least one groove 41, the present embodiment, it is one only to illustrate the quantity of groove 41
Situation.
In the present embodiment, groove 41 is set around viewing area AA, and the surface of groove 41 is provided with the first barrier layer 42.When
The material such as the extraneous steam of display panel and oxygen enters fashionable by passivation layer 40a, can run into groove 41, and the surface of groove 41
With the first barrier layer 42, the barrier layer 42 of groove 41 and first can obstruct the materials such as steam and oxygen, prevent steam and oxygen
Further invaded to display panel Deng material, film layer structure of the protection groove 41 in the AA sides of viewing area.Relative to
Prior art, can improve the ability of the materials such as display panel water vapor and oxygen erosion, improve the display quality of display panel,
Extend the service life of display panel.
Optionally, please continue to refer to Figure 10 and Figure 11, display panel also includes the second barrier layer 421, the second barrier layer 421
It is arranged between gate insulator 44 and passivation layer 40a；Second barrier layer 421 is arranged on non-display area BB, the second barrier layer 421
Set around viewing area AA；First barrier layer 42 is identical with the material of first electrode layer 30, the second barrier layer 421 and second electrode
The material of layer 50 is identical.In the display panel that the present embodiment is provided, there is provided the second barrier layer 421, can prevent steam and oxygen
The materials such as gas at the gap between gate insulator 44 and passivation layer 40a contact surfaces by entering inside display panel.First resistance
Interlayer 42 is identical with the material of first electrode layer 30, can be existed in the manufacturing process for making display panel using same material
The first barrier layer 42 and first electrode layer 30 are formed in same manufacturing process simultaneously；Second barrier layer 421 and the second electrode lay 50
Material it is identical, can make display panel manufacturing process in, using same material in same manufacturing process simultaneously shape
Into the second barrier layer 421 and the second electrode lay 50.The display panel that the present embodiment is provided further improves display panel water vapor
The ability corroded with the material such as oxygen, improves the display quality of display panel, extends the service life of display panel.
It should be noted that only being illustrated in the technical scheme in order to clearly illustrate the present embodiment, Figure 10 and Figure 11
The part-structure of display panel.Also, the second barrier layer 421, the display surface that the present embodiment is provided only are illustrated in Figure 10
The specific set-up mode of other structures refer to Figure 11 in plate.
In some optional implementations, Figure 12 refer to, during Figure 12 is display panel provided in an embodiment of the present invention
Another cross-sectional view of first substrate.On the basis of the display panel that Fig. 2 and Fig. 3 embodiments of the present invention are provided,
In the display panel that the present embodiment is provided, at least one layer of insulating barrier includes interlayer insulating film 40b and passivation layer 40a, first substrate
100 also include cushion 11, gate insulator 26, the second electrode lay 50；Film transistor device layer 20, which is removed, includes semiconductor layer
Outside 21, in addition to grid layer 22, source-drain electrode layer 234；First underlay substrate 10, cushion 11, semiconductor layer 21, gate insulator
26th, grid layer 22, interlayer insulating film 40b, the second electrode lay 50, source-drain electrode layer 234, passivation layer 40a, first electrode layer 30 are along the
One underlay substrate 10 is set gradually towards the direction of first electrode layer 30.Wherein, the first underlay substrate 10 is towards first electrode layer
30 direction refer to the Z-direction in Figure 12.
In the display panel that the present embodiment is provided, grid layer 22 is arranged on semiconductor layer 21 away from the first underlay substrate 10
Side, this structure is top gate type thin film transistor.Source-drain electrode layer 234 can include source electrode and drain electrode (not illustrated in figure),
Part-structure in the second electrode lay 50 is electrically connected with drain electrode, optionally, and the second electrode lay 50 includes pixel electrode.In Figure 12,
Source-drain electrode layer 234 is electrically connected by the second electrode lay 50 with semiconductor layer 21, during display panel is made, can be used
Intermediate tone mask version, forms the second electrode lay 50 and source-drain electrode layer 234 simultaneously in same manufacturing process.Semiconductor layer 21 and
Include dielectric layers between one electrode layer 30, as interlayer insulating film 40b and passivation layer 40a, interlayer insulating film 40b are arranged on
Between grid layer 22 and source-drain electrode layer 234, the technique effect with insulation；Passivation layer 40a cover films transistor device layer 20,
Technique effect with insulation, and passivation layer 40a generally set it is thicker, a relatively flat surface can be provided to set
Put first electrode layer 30.Optionally, interlayer insulating film 40b includes at least one groove 41b.Optionally, wrapped in passivation layer 40a
Include at least one groove 41a.In Figure 12, only using the quantity of interlayer insulating film 40b further grooves as one, passivation layer 40a further grooves
Quantity be to illustrate exemplified by one, optionally, in interlayer insulating film 40b or the quantity of passivation layer 40a further grooves can be with
For two or more.
In the present embodiment, interlayer insulating film 40b and passivation layer 40a are made in the technique behind semiconductor layer 21
, material is more loose.Optionally, at least one groove 41 is respectively arranged with interlayer insulating film 40b and passivation layer 40a,
Groove 41 is set around viewing area AA, and the surface of groove 41 is provided with the first barrier layer 42.When the steam that display panel is extraneous
Enter fashionable by interlayer insulating film 40b or passivation layer 40a with the material such as oxygen, groove 41, and the surface of groove 41 can be run into
With the first barrier layer 42, the barrier layer 42 of groove 41 and first can obstruct the materials such as steam and oxygen, prevent steam and oxygen
Further invaded to display panel Deng material, film layer structure of the protection groove 41 in the AA sides of viewing area.Relative to
Prior art, the embodiment of the present application can improve the ability of the materials such as display panel water vapor and oxygen erosion well, improve
The display quality of display panel, extends the service life of display panel.In addition the embodiment of the present application is by interlayer insulating film 40b and blunt
The groove changed in layer 40a is shifted to install, while the first barrier layer 42 in groove 41a and groove 41b is closely to connect
The integrative-structure connect, this structure is relative to the structure for forming the groove for directly running through interlayer insulating film 40b and passivation layer 40a
Speech, can significantly reduce the etching depth of groove, so that the manufacture craft of groove can be with the technique on existing panel
Processing procedure is mutually compatible, without increasing new complex process steps, while relative to a deeper groove is manufactured separately, the application is real
Applying example also has preparation technology simple, production efficiency and the higher advantage of process yields；Moreover, the structure of the embodiment of the present application
With more tortuous steam and oxygen transmission path, further increase the materials such as steam and oxygen from interlayer insulating film 40b and
Further intrusion is to the difficulty inside display panel in passivation layer 40a, so as to further extend the life-span of display panel.
In some optional implementations, Figure 13 refer to, during Figure 13 is display panel provided in an embodiment of the present invention
Another cross-sectional view of first substrate.On the basis of the display panel that Fig. 2 and Fig. 3 embodiments of the present invention are provided,
In the display panel that the present embodiment is provided, first substrate 100 also includes multiple Organic Light Emitting Diodes 60；Organic Light Emitting Diode
60 include the anode 61 and negative electrode 62 that are oppositely arranged and the luminous material layer being held and mounted between anode 61 and negative electrode 62
63；First barrier layer 42 is identical with the material of anode 61.Wherein, anode 61 is electrically connected with the source electrode 23 of thin film transistor (TFT).Figure 13
In, the quantity for only illustrating Organic Light Emitting Diode 60 is the situation of one, and the display panel that the present embodiment is provided is organic
Light emitting display panel, first substrate 100 include multiple Organic Light Emitting Diodes 60, organic electroluminescence display panel have self-luminous,
The advantages of wide viewing angle, high-contrast, low power consumption, fast reaction speed.
Present invention also offers a kind of display device, including the display panel that any of the above-described embodiment of the invention is provided
1000A.Figure 14 is refer to, Figure 14 is a kind of schematic diagram of display device provided in an embodiment of the present invention.The display that Figure 14 is provided
Device 1000 includes the display panel 1000A that any of the above-described embodiment of the invention is provided.Figure 14 embodiments are right only by taking mobile phone as an example
Display device 1000 is illustrated, it is to be understood that display device provided in an embodiment of the present invention, can be computer, TV,
Other have the display device of display function to display device for mounting on vehicle etc., and the present invention is not specifically limited to this.The embodiment of the present invention
The display device of offer, the beneficial effect with display panel provided in an embodiment of the present invention specifically may be referred to above-mentioned each reality
Example illustrating for display panel is applied, the present embodiment will not be repeated here.
Although some specific embodiments of the present invention are described in detail by example, the skill of this area
Art personnel are it should be understood that example above is merely to illustrate, the scope being not intended to be limiting of the invention.The skill of this area
Art personnel to above example it should be understood that can modify without departing from the scope and spirit of the present invention.This hair
Bright scope is defined by the following claims.
Claims (14)
1. a kind of display panel, the non-display area with viewing area and around the viewing area, it is characterised in that including：
First substrate, the first substrate includes the first underlay substrate, film transistor device layer, first electrode set gradually
Layer, the film transistor device layer includes semiconductor layer, and the material of the semiconductor layer includes metal oxide；It is described partly to lead
Include at least one layer of insulating barrier between body layer and the first electrode layer；
The non-display area includes at least one groove, and at least one described groove is arranged at least one layer of insulating barrier,
The groove is set around the viewing area；The groove surfaces are provided with the first barrier layer.
2. display panel according to claim 1, it is characterised in that the material of first barrier layer includes transparent metal
Oxide.
3. display panel according to claim 1, it is characterised in that first barrier layer and the first electrode layer
Material is identical.
4. display panel according to claim 1, it is characterised in that
At least one described groove include the first groove and the second groove, at least one layer of insulating barrier include the first insulating barrier and
Second insulating barrier；
First groove is arranged in the first insulating barrier, and second groove is arranged in the second insulating barrier.
5. display panel according to claim 1, it is characterised in that
The display panel also includes second substrate, and the second substrate is oppositely arranged with the first substrate；
The non-display area includes colloid, and the colloid is set around the viewing area, and the colloid is used to bond described first
Substrate and the second substrate；
The groove is arranged on the first substrate close to a side surface of the second substrate, and the groove includes part institute
State colloid.
6. display panel according to claim 5, it is characterised in that
It is provided with liquid crystal layer between the first substrate and the second substrate, it is the first substrate, the second substrate, described
Colloid formation confined space is used to accommodate the liquid crystal layer.
7. display panel according to claim 1, it is characterised in that
At least one layer of insulating barrier includes passivation layer, and the first substrate also includes gate insulator and the second electrode lay；
The film transistor device layer also includes grid layer, etching barrier layer, source-drain electrode layer；
First underlay substrate, the grid layer, the gate insulator, the semiconductor layer, the etching barrier layer, institute
Source-drain electrode layer, the second electrode lay, the passivation layer, the first electrode layer are stated along first underlay substrate towards described
The direction of first electrode layer is set gradually；Wherein,
The passivation layer includes at least one described groove.
8. display panel according to claim 7, it is characterised in that
The display panel also includes the second barrier layer, and second barrier layer is arranged on the gate insulator and the passivation
Between layer；
Second barrier layer is arranged on the non-display area, and second barrier layer is set around the viewing area；
First barrier layer is identical with the material of the first electrode layer, the material of the second barrier layer and the second electrode lay
It is identical.
9. display panel according to claim 1, it is characterised in that
At least one layer of insulating barrier includes interlayer insulating film and passivation layer, and it is exhausted that the first substrate also includes cushion, grid
Edge layer, the second electrode lay；
The film transistor device layer also includes grid layer, source-drain electrode layer；
First underlay substrate, the cushion, the semiconductor layer, the gate insulator, the grid layer, the layer
Between insulating barrier, the second electrode lay, source-drain electrode layer, the passivation layer, the first electrode layer along first substrate
Substrate is set gradually towards the direction of the first electrode layer.
10. display panel according to claim 9, it is characterised in that
The interlayer insulating film includes at least one described groove.
11. display panel according to claim 9, it is characterised in that
The passivation layer includes at least one described groove.
12. display panel according to claim 1, it is characterised in that
The width of orthographic projection of the groove on first underlay substrate is d1, and 10 μm≤d1≤50um.
13. display panel according to claim 1, it is characterised in that
The first substrate also includes multiple Organic Light Emitting Diodes；
The Organic Light Emitting Diode includes the anode and negative electrode being oppositely arranged；
First barrier layer is identical with the material of the anode.
14. a kind of display device, including the display panel according to claim any one of 1-13.
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| CN110311054A (en) * | 2019-07-16 | 2019-10-08 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and preparation method thereof |
| WO2021093031A1 (en) * | 2019-11-15 | 2021-05-20 | 深圳市华星光电半导体显示技术有限公司 | Display device and preparation method therefor |
| CN113377234A (en) * | 2021-06-29 | 2021-09-10 | 厦门天马微电子有限公司 | Touch substrate, touch display panel and display device |
| CN113377234B (en) * | 2021-06-29 | 2023-09-05 | 厦门天马微电子有限公司 | Touch substrate, touch display panel and display device |
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