CN107293475A - Reduce the forming method of epitaxial substrate defect - Google Patents
Reduce the forming method of epitaxial substrate defect Download PDFInfo
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- CN107293475A CN107293475A CN201610205601.5A CN201610205601A CN107293475A CN 107293475 A CN107293475 A CN 107293475A CN 201610205601 A CN201610205601 A CN 201610205601A CN 107293475 A CN107293475 A CN 107293475A
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- epitaxial substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention proposes a kind of forming method for reducing epitaxial substrate defect, first the removal of immersion defect is carried out to original epitaxial substrate to handle, remove the more scratch of original epitaxial substrate and defect, then, it is processed by shot blasting, then, original epitaxial substrate surface topography data is collected by detecting, and topographic data is analyzed, obtain the amount to be etched of original epitaxial substrate different zones, and the technological parameter needed for different zones is determined by amount to be etched, targetedly etching removes the amount to be etched of original epitaxial substrate different zones, so as to remove defect and the scratch on original epitaxial substrate surface, form the smooth epitaxial substrate in surface, and then it is improved the epitaxial layer performance being subsequently formed.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, more particularly to a kind of formation for reducing epitaxial substrate defect
Method.
Background technology
In traditional epitaxial substrate forming method, the monocrystal silicon proximally and distally grown be cut off so as to
Form block, peripheral polishing is then carried out to bulk, and form positioning side or positioning V grooves, for playing
The effect of position instruction；Then, slicing treatment is carried out to bulk, obtains epitaxial substrate；Then, to extension
Substrate carries out chamfered；Then, twin grinding (Double Disk Surface Grinding, DDSG) is carried out；
Then, then one side grinding (Single Disk Surface Grinding, SDSG) is carried out；Then, carry out two-sided
Polishing (Double Disk Surface Polishing)；Then, single-sided polishing processing (Single Disk are carried out
Surface Polishing)；It is last that required epitaxial layer is formed in the epitaxial substrate of formation.
However, there is problems with the method for traditional epitaxial substrate formation：It is being machined, example
Such as section, polishing technique, machinery inevitably can cause scratch (Scratch) in extension substrate surface,
The scratch caused and defect turn into starting point, and the epitaxial layer being subsequently formed can be made to produce the knot such as dislocation, stacking defect
Brilliant defect；, can also be in the epitaxial layer being subsequently formed when the damage that machining is caused to epitaxial substrate is larger
Middle to produce sliding, the epitaxial layer performance resulted in declines to a great extent.
The content of the invention
It is an object of the invention to provide a kind of forming method for reducing epitaxial substrate defect, make the extension to be formed
Substrate surface is smooth without scratch and defect, improves the performance for the epitaxial layer being subsequently formed.
To achieve these goals, the present invention proposes a kind of forming method for reducing epitaxial substrate defect, bag
Include step：
Original epitaxial substrate is provided；
Immersion defect removal processing is carried out to the initial epitaxial substrate；
The original epitaxial substrate is processed by shot blasting；
The original epitaxial substrate surface topography is detected, and preserves topographic data；
The topographic data is analyzed, the amount to be etched of the original epitaxial substrate different zones is obtained, and
The technological parameter needed for different zones is determined by the amount to be etched；
The etching of original epitaxial substrate different zones is carried out according to the required technological parameter of different zones, makes the original
Beginning epitaxial substrate surface is more smooth；
Single-sided polishing is carried out to the original epitaxial substrate, final epitaxial substrate is obtained.
Further, it is wet using monolithic rotating-spray in the forming method of described reduction epitaxial substrate defect
Method is performed etching to original epitaxial substrate different zones.
Further, in the forming method of described reduction epitaxial substrate defect, the technological parameter includes work
Skill temperature and process time.
Further, in the forming method of described reduction epitaxial substrate defect, the original epitaxial substrate is not
Technological temperature with region is adjusted using sucker zonal control electrical resistance heating.
Further, in the forming method of described reduction epitaxial substrate defect, the sucker includes multiple squares
The miniature heating unit of battle array arrangement.
Further, in the forming method of described reduction epitaxial substrate defect, the miniature heating unit is
Peltier effect devices or resistive heating device.
Further, in the forming method of described reduction epitaxial substrate defect, the miniature heating unit is
Polyimides heater, silicon rubber heater, mica heater, metal heater, ceramic heater, half
The one or more of conductor heater or carbon heater.
Further, in the forming method of described reduction epitaxial substrate defect, the miniature heating unit is adopted
Formed with wire wound, chemical conversion foil or coining formula.
Further, in the forming method of described reduction epitaxial substrate defect, the single miniature heating list
The power bracket of member is 0~20W.
Further, in the forming method of described reduction epitaxial substrate defect, the process time passes through list
Piece rotation is controlled.
Further, in the forming method of described reduction epitaxial substrate defect, the monolithic rotating-spray is wet
Method carries out the spraying of etchant solution by nozzle.
Further, in the forming method of described reduction epitaxial substrate defect, the etchant solution includes hydrogen
Fluoric acid, nitric acid, phosphoric acid and water, wherein, HF:HNO3:H3PO4:H2O mass ratioes are 7%：30%：35%：
38%.
Further, in the forming method of described reduction epitaxial substrate defect, the immersion defect is removed
The etchant solution that processing is used includes hydrofluoric acid, nitric acid, phosphoric acid and water, wherein, HF:HNO3:H3PO4:H2O
Mass ratio is 7%：30%：35%：38%.
Further, in the forming method of described reduction epitaxial substrate defect, the original epitaxial substrate
Forming step includes：
Monocrystal silicon is provided；
Grinding ball process is carried out to the monocrystal silicon；
Positioning side or positioning V grooves are formed on the monocrystal silicon；
The monocrystal silicon is cut into slices, chamfered；
Twin grinding and one side grinding are carried out respectively, obtain the original epitaxial substrate.
Further, in the forming method of described reduction epitaxial substrate defect, the epitaxial substrate ultimately formed
Surface topography difference is less than 25nm.
Compared with prior art, the beneficial effects are mainly as follows：First original epitaxial substrate is carried out
The removal of immersion defect is handled, and is removed the more scratch of original epitaxial substrate and defect, then, is polished
Processing, then, collects original epitaxial substrate surface topography data, and topographic data is divided by detecting
Analysis, obtains the amount to be etched of original epitaxial substrate different zones, and determines different zones institute by amount to be etched
The amount to be etched of the technological parameter needed, the targetedly original epitaxial substrate different zones of etching removal, so that
Defect and the scratch on original epitaxial substrate surface are removed, the smooth epitaxial substrate in surface is formed, and then make follow-up
The epitaxial layer performance of formation is improved.
Brief description of the drawings
Fig. 1 is the flow chart of the forming method of reduction epitaxial substrate defect in one embodiment of the invention；
Fig. 2 be one embodiment of the invention in by multiple miniature heating unit matrix arrangements sucker top view；
Processing chamber when Fig. 3 is in one embodiment of the invention to the etching of original epitaxial substrate progress different zones
Interior structural representation.
Embodiment
The forming method of the reduction epitaxial substrate defect of the present invention is carried out below in conjunction with schematic diagram more detailed
Description, which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change
The present invention of this description, and still realize the advantageous effects of the present invention.Therefore, description below should be appreciated that
For for the widely known of those skilled in the art, and it is not intended as limitation of the present invention.
The present invention is more specifically described by way of example referring to the drawings in the following passage.According to it is following explanation and
Claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simple
The form of change and use non-accurately ratio, only to it is convenient, lucidly aid in illustrating the embodiment of the present invention
Purpose.
Fig. 1 is refer to, in the present embodiment, it is proposed that a kind of forming method for reducing epitaxial substrate defect, bag
Include step：
S100：Original epitaxial substrate is provided；
S200：Immersion defect removal processing is carried out to the initial epitaxial substrate；
S300：The original epitaxial substrate is processed by shot blasting；
S400：The original epitaxial substrate surface topography is detected, and preserves topographic data；
S500：The topographic data is analyzed, the to be etched of the original epitaxial substrate different zones is obtained
Amount, and determine by the amount to be etched technological parameter needed for different zones；
S600：The etching of original epitaxial substrate different zones is carried out according to the required technological parameter of different zones, is made
The original epitaxial substrate surface is more smooth；
S700：Single-sided polishing is carried out to the original epitaxial substrate, final epitaxial substrate is obtained.
Specifically, in the present embodiment, the forming step of the original epitaxial substrate includes：
Monocrystal silicon is provided；
Grinding ball process is carried out to the monocrystal silicon；
Positioning side or positioning V grooves are formed on the monocrystal silicon；
The monocrystal silicon is cut into slices, chamfered；
Twin grinding and one side grinding are carried out respectively, obtain the original epitaxial substrate.
When forming original epitaxial substrate, the grinding of progress is round as a ball, section, chamfering and twin grinding and one side
Grinding can form different degrees of scratch on original epitaxial substrate surface or cause defect, follow-up to continue to throw
Light can not also remove whole defects.
In the present embodiment, form after original epitaxial substrate, first handled using the removal of immersion defect, will
Original epitaxial substrate is immersed in etchant solution, to remove the larger scratch in part or defect.Wherein, institute
Mixture of the etchant solution for hydrofluoric acid, nitric acid, phosphoric acid and water is stated, wherein, HF:HNO3:H3PO4:H2O
Mass ratio is 7%：30%：35%：38%, specific soak time can be selected according to different requirements
Select.
After immersion defect removal processing is carried out, the original epitaxial substrate is processed by shot blasting, wherein,
Polishing includes twin polishing and edge polishing is handled.
After a polishing process, first, the original epitaxial substrate surface topography is detected, and preserves topographic data；
Wherein, thickness value, concavo-convex situation in the uniformity and each region of the topographic data including original epitaxial substrate
Etc., after topographic data is collected into, the topographic data is analyzed, the original extension is obtained
The amount to be etched of substrate different zones, and determine by the amount to be etched technological parameter needed for different zones.
It can be determined that out that each region needs the amount to be etched etched according to topographic data, so as to subregion
Perform etching, make the epitaxial substrate to be formed integrally smooth.
In the present embodiment, original epitaxial substrate different zones are performed etching using monolithic rotating-spray wet method.
The technological parameter includes technological temperature and process time, wherein, technological temperature and process time can be fine
The different etch amounts of control.
In order to control the technological temperature of different zones, in the present embodiment, using sucker zonal control resistance
Heating is adjusted.Specifically, refer to Fig. 2, the sucker 10 includes the miniature of multiple matrix arrangements
Heating unit 11, its number, arrangement mode can need to be selected according to different, not limit herein；
Individually controlled by the temperature to each miniature heating unit 11, so as to realize to whole original epitaxial substrate
The control of the technological temperature of different zones.
In the present embodiment, the miniature heating unit 11 can be that peltier effect devices or resistance heating are filled
Put.The miniature heating unit 11 can for polyimides heater, silicon rubber heater, mica heater,
One kind of all suitable materials such as metal heater, ceramic heater, semiconductor heat booster or carbon heater or
It is a variety of；The miniature heating unit 11 can be formed using wire wound, chemical conversion foil or coining formula；Single institute
The power adjustable scope for stating miniature heating unit 11 is 0~20W, optimal, the sucker 10 can be covered
Original epitaxial substrate.
In addition, as shown in figure 3, the monolithic rotating-spray wet method carries out the spray of etchant solution by nozzle 20
Apply, nozzle 20 can be moved up and down, according to specific requirement, and nozzle 20 is selected in original epitaxial substrate
The time length of a certain region in 30 surfaces spraying determines the length of process time, wherein, etchant solution includes
Hydrofluoric acid, nitric acid, phosphoric acid and water, wherein, HF:HNO3:H3PO4:H2O mass ratioes are 7%：30%：35%：
38%.
Wherein, original epitaxial substrate 30 is placed on the sucker 10 in technique, and the sucker 10 is used
Heated in it, the bottom of sucker 10 connects a rotating shaft 40, for driving sucker 10 and original extension to serve as a contrast
Bottom 30 is rotated.
After region etch is carried out to original epitaxial substrate, the scratch on original epitaxial substrate surface and defect etc.
It is removed, it is ensured that the epitaxial substrate surface topography difference ultimately formed is less than 25nm；Then, then to it enter
The single-sided polishing processing on row surface, obtains the smooth epitaxial substrate in final surface, is adapted to the life of subsequent epitaxial layer
It is long, and ensure that the performance of subsequent epitaxial layer growth.
To sum up, in the forming method of reduction epitaxial substrate defect provided in an embodiment of the present invention, first to original
Epitaxial substrate carries out immersion defect removal processing, removes the more scratch of original epitaxial substrate and defect, connects
, be processed by shot blasting, then, original epitaxial substrate surface topography data is collected by detecting, and to shape
Looks data are analyzed, and obtain the amount to be etched of original epitaxial substrate different zones, and true by amount to be etched
Determine the technological parameter needed for different zones, targetedly etching removes treating for original epitaxial substrate different zones
Etch amount, so as to remove defect and the scratch on original epitaxial substrate surface, forms the smooth epitaxial substrate in surface,
And then it is improved the epitaxial layer performance being subsequently formed.
The preferred embodiments of the present invention are above are only, any restriction effect is not played to the present invention.Appoint
What person of ordinary skill in the field, in the range of technical scheme is not departed from, to the present invention
The technical scheme and technology contents of exposure make any type of equivalent substitution or modification etc. variation, belong to without departing from
The content of technical scheme, still falls within protection scope of the present invention.
Claims (15)
1. a kind of forming method for reducing epitaxial substrate defect, it is characterised in that including step：
Original epitaxial substrate is provided；
Immersion defect removal processing is carried out to the initial epitaxial substrate；
The original epitaxial substrate is processed by shot blasting；
The original epitaxial substrate surface topography is detected, and preserves topographic data；
The topographic data is analyzed, the amount to be etched of the original epitaxial substrate different zones is obtained, and
The technological parameter needed for different zones is determined by the amount to be etched；
The etching of original epitaxial substrate different zones is carried out according to the required technological parameter of different zones, makes the original
Beginning epitaxial substrate surface is more smooth；
Single-sided polishing is carried out to the original epitaxial substrate, final epitaxial substrate is obtained.
2. the forming method of epitaxial substrate defect is reduced as claimed in claim 1, it is characterised in that use monolithic
Rotating-spray wet method is performed etching to original epitaxial substrate different zones.
3. the forming method of epitaxial substrate defect is reduced as claimed in claim 2, it is characterised in that the technique
Parameter includes technological temperature and process time.
4. the forming method of epitaxial substrate defect is reduced as claimed in claim 3, it is characterised in that described original
The technological temperature of epitaxial substrate different zones is adjusted using sucker zonal control electrical resistance heating.
5. the forming method of epitaxial substrate defect is reduced as claimed in claim 4, it is characterised in that the sucker
Miniature heating unit including multiple matrix arrangements.
6. the forming method of epitaxial substrate defect is reduced as claimed in claim 5, it is characterised in that described miniature
Heating unit is peltier effect devices or resistive heating device.
7. the forming method of epitaxial substrate defect is reduced as claimed in claim 5, it is characterised in that described miniature
Heating unit is polyimides heater, silicon rubber heater, mica heater, metal heater, ceramics
The one or more of heater, semiconductor heat booster or carbon heater.
8. the forming method of epitaxial substrate defect is reduced as claimed in claim 5, it is characterised in that described miniature
Heating unit is formed using wire wound, chemical conversion foil or coining formula.
9. the forming method of epitaxial substrate defect is reduced as claimed in claim 5, it is characterised in that single described
The power bracket of miniature heating unit is 0~20W.
10. the forming method of epitaxial substrate defect is reduced as claimed in claim 3, it is characterised in that the work
The skill time is controlled by monolithic rotation.
11. the forming method of epitaxial substrate defect is reduced as claimed in claim 3, it is characterised in that the list
Piece rotating-spray wet method carries out the spraying of etchant solution by nozzle.
12. the forming method of epitaxial substrate defect is reduced as claimed in claim 11, it is characterised in that the corruption
Losing solution includes hydrofluoric acid, nitric acid, phosphoric acid and water, wherein, HF:HNO3:H3PO4:H2O mass ratioes are 7%：
30%：35%：38%.
13. the forming method of epitaxial substrate defect is reduced as claimed in claim 1, it is characterised in that described heavy
The etchant solution that immersion defect removes processing use includes hydrofluoric acid, nitric acid, phosphoric acid and water, wherein,
HF:HNO3:H3PO4:H2O mass ratioes are 7%：30%：35%：38%.
14. the forming method of epitaxial substrate defect is reduced as claimed in claim 1, it is characterised in that the original
The forming step of beginning epitaxial substrate includes：
Monocrystal silicon is provided；
Grinding ball process is carried out to the monocrystal silicon；
Positioning side or positioning V grooves are formed on the monocrystal silicon；
The monocrystal silicon is cut into slices, chamfered；
Twin grinding and one side grinding are carried out respectively, obtain the original epitaxial substrate.
15. the forming method of epitaxial substrate defect is reduced as claimed in claim 1, it is characterised in that most end form
Into epitaxial substrate surface topography difference be less than 25nm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610205601.5A CN107293475B (en) | 2016-04-01 | 2016-04-01 | Forming method for reducing epitaxial substrate defects |
| TW105125356A TWI616936B (en) | 2016-04-01 | 2016-08-09 | Method of epitaxy wafer defect reduction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610205601.5A CN107293475B (en) | 2016-04-01 | 2016-04-01 | Forming method for reducing epitaxial substrate defects |
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| CN107293475A true CN107293475A (en) | 2017-10-24 |
| CN107293475B CN107293475B (en) | 2021-01-01 |
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| CN201610205601.5A Active CN107293475B (en) | 2016-04-01 | 2016-04-01 | Forming method for reducing epitaxial substrate defects |
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| TW (1) | TWI616936B (en) |
Cited By (3)
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| CN107946191A (en) * | 2017-11-07 | 2018-04-20 | 德淮半导体有限公司 | Crystal column surface pattern control system and control method |
| CN110634759A (en) * | 2019-09-03 | 2019-12-31 | 武汉新芯集成电路制造有限公司 | Method for detecting wet etching defects |
| CN113178382A (en) * | 2020-12-30 | 2021-07-27 | 集美大学 | Polishing method of wafer-level diamond substrate and wafer-level diamond substrate |
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| CN1773682A (en) * | 2004-11-11 | 2006-05-17 | 硅电子股份公司 | Method and apparatus for leveling a semiconductor wafer, and semiconductor wafer with improved flatness |
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| JP2009233493A (en) * | 2008-03-26 | 2009-10-15 | Dainippon Screen Mfg Co Ltd | Method/device for treating substrate |
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| CN107946191A (en) * | 2017-11-07 | 2018-04-20 | 德淮半导体有限公司 | Crystal column surface pattern control system and control method |
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| CN113178382A (en) * | 2020-12-30 | 2021-07-27 | 集美大学 | Polishing method of wafer-level diamond substrate and wafer-level diamond substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107293475B (en) | 2021-01-01 |
| TW201737315A (en) | 2017-10-16 |
| TWI616936B (en) | 2018-03-01 |
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