CN107275209B - 一种SiC超高压PiN二极管器件材料的制备方法 - Google Patents
一种SiC超高压PiN二极管器件材料的制备方法 Download PDFInfo
- Publication number
- CN107275209B CN107275209B CN201710459941.5A CN201710459941A CN107275209B CN 107275209 B CN107275209 B CN 107275209B CN 201710459941 A CN201710459941 A CN 201710459941A CN 107275209 B CN107275209 B CN 107275209B
- Authority
- CN
- China
- Prior art keywords
- layer
- single crystal
- buffer layer
- crystal substrate
- sic single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000013078 crystal Substances 0.000 claims abstract description 47
- 230000000750 progressive effect Effects 0.000 claims abstract description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001257 hydrogen Substances 0.000 claims abstract description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000001816 cooling Methods 0.000 claims abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 63
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 62
- 239000007789 gas Substances 0.000 claims description 42
- 239000002243 precursor Substances 0.000 claims description 13
- 239000012188 paraffin wax Substances 0.000 claims description 9
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 3
- 102100033067 Growth factor receptor-bound protein 2 Human genes 0.000 claims description 3
- 101000871017 Homo sapiens Growth factor receptor-bound protein 2 Proteins 0.000 claims description 3
- 101001120056 Homo sapiens Phosphatidylinositol 3-kinase regulatory subunit alpha Proteins 0.000 claims description 3
- 102100026169 Phosphatidylinositol 3-kinase regulatory subunit alpha Human genes 0.000 claims description 3
- 230000018199 S phase Effects 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- 238000011084 recovery Methods 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 3
- 239000005052 trichlorosilane Substances 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 4
- 230000003139 buffering effect Effects 0.000 description 3
- 230000008676 import Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710459941.5A CN107275209B (zh) | 2017-06-17 | 2017-06-17 | 一种SiC超高压PiN二极管器件材料的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710459941.5A CN107275209B (zh) | 2017-06-17 | 2017-06-17 | 一种SiC超高压PiN二极管器件材料的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107275209A CN107275209A (zh) | 2017-10-20 |
CN107275209B true CN107275209B (zh) | 2019-08-23 |
Family
ID=60066856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710459941.5A Active CN107275209B (zh) | 2017-06-17 | 2017-06-17 | 一种SiC超高压PiN二极管器件材料的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107275209B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7239432B2 (ja) * | 2019-09-27 | 2023-03-14 | 東海カーボン株式会社 | 多結晶SiC成形体の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1324168C (zh) * | 2002-03-19 | 2007-07-04 | 财团法人电力中央研究所 | SiC结晶的制造方法以及SiC结晶 |
CN102064187A (zh) * | 2009-11-11 | 2011-05-18 | 中国科学院半导体研究所 | 一种碳化硅同质pin微结构材料及其制作方法 |
CN104395986A (zh) * | 2012-05-31 | 2015-03-04 | Lg伊诺特有限公司 | 碳化硅外延晶片及其制造方法 |
CN105225931A (zh) * | 2015-09-30 | 2016-01-06 | 中国电子科技集团公司第四十八研究所 | AlN模板及其生长方法、基于AlN模板的Si基GaN外延结构及其生长方法 |
-
2017
- 2017-06-17 CN CN201710459941.5A patent/CN107275209B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1324168C (zh) * | 2002-03-19 | 2007-07-04 | 财团法人电力中央研究所 | SiC结晶的制造方法以及SiC结晶 |
CN102064187A (zh) * | 2009-11-11 | 2011-05-18 | 中国科学院半导体研究所 | 一种碳化硅同质pin微结构材料及其制作方法 |
CN104395986A (zh) * | 2012-05-31 | 2015-03-04 | Lg伊诺特有限公司 | 碳化硅外延晶片及其制造方法 |
CN105225931A (zh) * | 2015-09-30 | 2016-01-06 | 中国电子科技集团公司第四十八研究所 | AlN模板及其生长方法、基于AlN模板的Si基GaN外延结构及其生长方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107275209A (zh) | 2017-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11848206B2 (en) | Method of producing a two-dimensional material | |
CN110504343B (zh) | 基于蓝宝石衬底的氧化镓薄膜及其生长方法和应用 | |
CN105914139A (zh) | 一种石墨烯上自组织成核外延GaN材料的方法 | |
CN105244255B (zh) | 一种碳化硅外延材料及其生产方法 | |
JP2017019679A (ja) | 炭化珪素エピタキシャル基板 | |
US20150035123A1 (en) | Curvature compensated substrate and method of forming same | |
CN107275209B (zh) | 一种SiC超高压PiN二极管器件材料的制备方法 | |
CN105129785B (zh) | 一种绝缘体上石墨烯的制备方法 | |
US8802546B2 (en) | Method for manufacturing silicon carbide semiconductor device | |
KR20150002066A (ko) | 에피택셜 웨이퍼 | |
CN107104172B (zh) | 一种SiC雪崩光电二极管器件外延材料的制备方法 | |
TWI739799B (zh) | 二維材料製造方法 | |
US11107677B2 (en) | Method for manufacturing SiC epitaxial substrate | |
KR101169018B1 (ko) | 단결정 실리콘 박막 및 이의 제조 방법 | |
CN112103178A (zh) | 一种覆于铜表面的GaN薄膜及其制备方法 | |
CN106835269A (zh) | 用于氮化物外延生长的叠层基板及其形成方法 | |
Yan et al. | SiC Warm-wall LPCVD growth on multiple 50-mm diameter wafers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Preparation of SiC ultra high voltage pin diode material Effective date of registration: 20200730 Granted publication date: 20190823 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: Y2020980004594 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 523000 second floor office building, No.5, Gongye North 1st Road, Hubei Industrial City, Songshan, Dongguan City, Guangdong Province Patentee after: Guangdong Tianyu Semiconductor Co.,Ltd. Address before: 523000 second floor office building, No.5, Gongye North 1st Road, Hubei Industrial City, Songshan, Dongguan City, Guangdong Province Patentee before: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230406 Granted publication date: 20190823 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: DONGGUAN TIANYU SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: Y2020980004594 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A Preparation Method for SiC Ultra High Voltage PiN Diode Device Materials Effective date of registration: 20230512 Granted publication date: 20190823 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: Guangdong Tianyu Semiconductor Co.,Ltd. Registration number: Y2023980040499 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20190823 Pledgee: China Co. truction Bank Corp Dongguan branch Pledgor: Guangdong Tianyu Semiconductor Co.,Ltd. Registration number: Y2023980040499 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |