CN107248847A - A kind of difference Kao Bizi voltage controlled oscillators - Google Patents
A kind of difference Kao Bizi voltage controlled oscillators Download PDFInfo
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- CN107248847A CN107248847A CN201710366566.XA CN201710366566A CN107248847A CN 107248847 A CN107248847 A CN 107248847A CN 201710366566 A CN201710366566 A CN 201710366566A CN 107248847 A CN107248847 A CN 107248847A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
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Abstract
The invention discloses a kind of difference Kao Bizi voltage controlled oscillators, including resonance circuit, the first negative resistance circuit, the second negative resistance circuit and negative resistance enhancing circuit.The resonance circuit is inductance capacitance parallel resonance structure, which determines the frequency of oscillation of oscillator and provides the function of frequency tuning；First negative resistance circuit and the second negative resistance circuit are used to produce negative resistance, to offset the ohmic losses of the resonance circuit, so as to produce stable vibration output；The negative resistance enhancing circuit is used for the negative resistance for further improving oscillator active circuitry, shortens the Induction Peried of oscillator；Two ports of the resonance circuit are the output port of differential vibrating signal.The present invention can export the single-ended vibration amplitude of oscillation more than supply voltage at lower supply voltages, and provide good phase noise performance；The characteristics of possessing low voltage operating, the high vibration amplitude of oscillation, low phase noise and short Induction Peried.
Description
Technical field
The invention belongs to integrated circuit fields, more particularly to a kind of difference Kao Bizi voltage controlled oscillators.
Background technology
Voltage controlled oscillator (voltage-controlled oscillator, VCO) is used as the crucial portion in transceiver
One of part, its performance to system plays vital effect.The phase noise of voltage controlled oscillator will be by with doing with outer
Reciprocal mixing, the Error Vector Magnitude of deterioration signal and the lifting disturbed are while reception noise floor of co-channel full duplex system etc.
Mode reduces the performance of system.
With the continuous diminution of the characteristic size of complementary metal oxide semiconductor (CMOS) technique, MOS field effect transistors
The voltage endurance capability of pipe (MOSFET) is also constantly reduced, so as to force the supply voltage continuous decrease of chip.However, relatively low power supply
Voltage seriously limits the performance of voltage controlled oscillator：First, the oscillation amplitude of voltage controlled oscillator can be limited by supply voltage,
And the distal end phase noise (1/f of voltage controlled oscillator2Region) it is inversely proportional to the power of oscillator signal, therefore its distal end phase noise
It is able to can deteriorate.Secondly, relatively low grid source bias voltage causes transistor to be operated in sub-threshold region so that the starting of oscillation of oscillator becomes
It is more difficult.Finally, because local oscillation buffer needs to provide rail-to-rail local oscillation signal to frequency mixer, and relatively low VCO
The device vibration amplitude of oscillation can increase the power consumption of local oscillation buffer.
Kao Bizi voltage controlled oscillators have excellent phase noise performance due to the pulse working mode of its transistor, because
This is widely used in wireless transceiver system, and a kind of typical leakage-source feedback differential Kao Bizi voltage controlled oscillator structures are as shown in Figure 1.
However, the structure is facing the problem of starting of oscillation is difficult under the conditions of low voltage operating, and the output voltage swing of oscillator is also limited by
Supply voltage.In order to improve the output voltage swing of oscillator under lower pressure, method main at present is anti-including the use of transformer
Feedback technology and the extra inductance of use.Fig. 2 (a) illustrates that a kind of low pressure cross-couplings NMOS based on transformer feedback is voltage-controlled to shake
Device structure is swung, the wherein drain electrode of nmos pass transistor and source electrode has inductance, therefore its drain voltage and source voltage can surpass
Power rail is crossed, the vibration amplitude of oscillation is improved so as to reach, reduces the purpose of phase noise.Because the modeling of on-chip transformer is more multiple
Miscellaneous, which increase the circuit design difficulty of the structure.Fig. 2 (b) illustrates a kind of difference Kao Bizi VCOs of the enhancing amplitude of oscillation
Device structure, allows oscillating voltage to be less than ground level by increasing extra inductance in nmos pass transistor source electrode.However, extra
Inductance need to take larger chip area, therefore the cost of chip can be increased.
The content of the invention
The present invention is in order to solve the above technical problems, propose a kind of difference Kao Bizi voltage controlled oscillators, without using volume
Under conditions of outer passive device, the excellent properties of the high vibration amplitude of oscillation, low phase noise and short Induction Peried are realized.
The technical solution adopted by the present invention is：A kind of difference Kao Bizi voltage controlled oscillators, including：First negative resistance circuit,
Two negative resistance circuits, negative resistance enhancing circuit and resonance circuit；The resonance circuit is inductance capacitance parallel resonance structure, determines to shake
Swing the frequency of oscillation of device；First negative resistance circuit and the second negative resistance circuit are used to produce negative resistance, to offset the resistance of resonance circuit
Property loss, so as to produce stable vibration output；The negative resistance enhancing circuit is used for the negative resistance for improving oscillator, reduces difficult oscillation starting
Degree；
The 5th end that the first end of first negative resistance circuit strengthens circuit with negative resistance is connected, and the second of the first negative resistance circuit
End is connected with the first end of resonance circuit；Second end of the resonance circuit is connected with the second end of the second negative resistance circuit, resonance
3rd termination power V of circuitDD, the 4th termination frequency tuning voltage of resonance circuit；The first end of second negative resistance circuit
The 5th end for strengthening circuit with negative resistance is connected；The first end that 3rd end of first negative resistance circuit strengthens circuit with negative resistance connects
Connect, the second end of the first negative resistance circuit is connected with the second end that negative resistance strengthens circuit；3rd end of second negative resistance circuit with
Negative resistance strengthens the three-terminal link of circuit, and the second end of the second negative resistance circuit is connected with the 4th end that negative resistance strengthens circuit；It is described
The 5th end ground connection of negative resistance enhancing circuit.
Further, the resonance circuit includes：First inductance, the second inductance, the first variodenser and the second variodenser；
The first end of first variodenser is connected with the first end of the first inductance, and the first end collectively as resonance circuit is used to export
First oscillator signal；Second end of first inductance is connected with the first end of the second inductance, collectively as the of resonance circuit
Three ends；Second end of second inductance is connected with the first end of the second variodenser, is used collectively as the second end of resonance circuit
In exporting the second oscillator signal；Second end of second variodenser is connected with the second end of the first variodenser, collectively as humorous
Shake the 4th end of circuit.
Further, first negative resistance circuit includes：First nmos pass transistor, the first electric capacity and the second electric capacity；Institute
The grid of the first nmos pass transistor is stated as the second end of the first negative resistance circuit, the drain electrode of the first nmos pass transistor meets power supply VDD,
The source electrode of first nmos pass transistor is connected with the first end of the first electric capacity；The source electrode and the first NMOS of first nmos pass transistor
The body end connection of transistor, collectively as the 3rd end of the first negative resistance circuit；Second end of first electric capacity and the first NMOS
The grid connection of transistor；First end of the source electrode of first nmos pass transistor also with the second electric capacity is connected；Second electricity
Hold the second end as the first negative resistance circuit first end.
Further, second negative resistance circuit includes：Second nmos pass transistor, the 3rd electric capacity and the 4th electric capacity；Institute
The grid of the second nmos pass transistor is stated as the second end of the second negative resistance circuit, the drain electrode of the second nmos pass transistor meets power supply VDD,
The source electrode of second nmos pass transistor is connected with the first end of the 3rd electric capacity；The source electrode and the 2nd NMOS of second nmos pass transistor
The body end connection of transistor, collectively as the 3rd end of the second negative resistance circuit；Second end of the 3rd electric capacity and the 2nd NMOS
The grid connection of transistor；First end of the source electrode of second nmos pass transistor also with the 4th electric capacity is connected；4th electricity
Hold the second end as the second negative resistance circuit first end.
Further, the negative resistance enhancing circuit includes：3rd nmos pass transistor and the 4th nmos pass transistor；Described 3rd
The drain electrode of nmos pass transistor strengthens the first end of circuit as negative resistance, and the grid of the 3rd nmos pass transistor is used as negative resistance enhancing circuit
The 4th end；The source electrode of 3rd nmos pass transistor is connected with the source electrode of the 4th nmos pass transistor, is strengthened collectively as negative resistance
5th end of circuit；The body end of 3rd nmos pass transistor is connected with the drain electrode of the 4th nmos pass transistor；4th NMOS
The drain electrode of transistor strengthens the 3rd end of circuit as negative resistance, and the grid of the 4th nmos pass transistor strengthens the of circuit as negative resistance
Two ends；The body end of 4th nmos pass transistor is connected with the drain electrode of the 3rd nmos pass transistor.
The present invention another technical scheme be：A kind of difference Kao Bizi voltage controlled oscillators, it is characterised in that including：First
Negative resistance circuit, the second negative resistance circuit, negative resistance enhancing circuit and resonance circuit；The resonance circuit is inductance capacitance parallel resonance
Structure, determines the frequency of oscillation of oscillator；First negative resistance circuit and the second negative resistance circuit are used to produce negative resistance, humorous to offset
Shake the ohmic losses of circuit, so as to produce stable vibration output；The negative resistance enhancing circuit is used for the negative resistance for improving oscillator,
Reduce starting of oscillation difficulty；
The 5th end that the first end of first negative resistance circuit strengthens circuit with negative resistance is connected, and the second of the first negative resistance circuit
End is connected with the first end of resonance circuit；Second end of the resonance circuit is connected with the second end of the second negative resistance circuit, resonance
The 3rd end ground connection of circuit, the 4th termination frequency tuning voltage of resonance circuit；The first end of second negative resistance circuit is with bearing
The 5th end connection of resistance enhancing circuit；The first end that 3rd end of first negative resistance circuit strengthens circuit with negative resistance is connected, the
The second end that second end of one negative resistance circuit strengthens circuit with negative resistance is connected；3rd end of second negative resistance circuit increases with negative resistance
The three-terminal link on forceful electric power road, the second end of the second negative resistance circuit is connected with the 4th end that negative resistance strengthens circuit；The negative resistance increases
The 5th termination power V on forceful electric power roadDD。
Further, the resonance circuit includes：First inductance, the second inductance, the first variodenser and the second variodenser；
The first end of first variodenser is connected with the first end of the first inductance, and the first end collectively as resonance circuit is used to export
First oscillator signal；Second end of first inductance connects with the first end of the second inductance, collectively as the of resonance circuit
Three ends；Second end of second inductance is connected with the first end of the second variodenser, is used collectively as the second end of resonance circuit
In exporting the second oscillator signal；Second end of second variodenser is connected with the second end of the first variodenser, collectively as humorous
Shake the 4th end of circuit.
Further, first negative resistance circuit includes：First PMOS transistor, the first electric capacity and the second electric capacity；Institute
The grid of the first PMOS transistor is stated as the second end of the first negative resistance circuit, the grounded drain of the first PMOS transistor, first
The source electrode of PMOS transistor as the first negative resistance circuit the 3rd end, the first of the source electrode of the first PMOS transistor and the first electric capacity
End connection；The source electrode of first PMOS transistor is connected with the body end of the first PMOS transistor, collectively as the first negative resistance electricity
3rd end on road；Second end of first electric capacity is connected with the grid of the first PMOS transistor；First PMOS transistor
First end of the source electrode also with the second electric capacity be connected；Second end of second electric capacity as the first negative resistance circuit first end.
Further, second negative resistance circuit includes：Second PMOS transistor, the 3rd electric capacity and the 4th electric capacity；Institute
The grid of the second PMOS transistor is stated as the second end of the second negative resistance circuit, the grounded drain of the second PMOS transistor, second
The source electrode of PMOS transistor as the second negative resistance circuit the 3rd end, the first of the source electrode of the second PMOS transistor and the 3rd electric capacity
End connection；The source electrode of second PMOS transistor is connected with the body end of the second PMOS transistor, collectively as the second negative resistance electricity
3rd end on road；Second end of the 3rd electric capacity is connected with the grid of the second PMOS transistor；Second PMOS transistor
First end of the source electrode also with the 4th electric capacity be connected；Second end of the 4th electric capacity as the second negative resistance circuit first end.
Further, the negative resistance enhancing circuit includes：3rd PMOS transistor and the 4th PMOS transistor；Described 3rd
The drain electrode of PMOS transistor strengthens the first end of circuit as negative resistance, and the grid of the 3rd PMOS transistor is used as negative resistance enhancing circuit
The 4th end；The source electrode of 3rd PMOS transistor is connected with the source electrode of the 4th PMOS transistor, is strengthened collectively as negative resistance
5th end of circuit；The body end of 3rd PMOS transistor is connected with the drain electrode of the 4th PMOS transistor；4th PMOS
The drain electrode of transistor strengthens the 3rd end of circuit as negative resistance, and the grid of the 4th PMOS transistor strengthens the of circuit as negative resistance
Two ends；The body end of 4th PMOS transistor is connected with the drain electrode of the 3rd PMOS transistor.
Beneficial effects of the present invention：A kind of difference Kao Bizi voltage controlled oscillators of the present invention, by using without tail current source
Structure, while tail current source is eliminated to the contribution of oscillator phase, also reduces the minimum electricity needed for oscillator
Source voltage；By adjusting capacitance partial pressure ratio, oscillator can obtain defeated more than the vibration of power rail under the conditions of low supply voltage
Go out the amplitude of oscillation, so as to lift its distal end phase noise performance；Shaken using multi-tap capacitance intrinsic in Kao Bizi oscillator structures
Swing the relatively low node of the amplitude of oscillation, thus avoid transistor body-leakage that dynamic body bias technology brings under height output oscillation amplitude driving conditional,
The problem of body-source parasitic diode forward conduction；At the same time, dynamic body bias technology also improves the negative resistance of active circuit,
Shorten Induction Peried；On off state is operated in because negative resistance strengthens the transistor in circuit, and the first negative resistance circuit and the
The source electrode of transistor in two negative resistance circuits is without common-mode node, therefore oscillator has excellent 1/f3Phase noise performance；This
Outside, the present invention improves the vibration amplitude of oscillation without using complicated transformer feedback technology or extra inductance, therefore chip takes
Area is small, and cost is low；To sum up, a kind of difference Kao Bizi voltage controlled oscillators of the invention can be under low supply voltage condition of work
The height output amplitude of oscillation and the characteristic of low phase noise are realized, and without using extra passive device.
Brief description of the drawings
Fig. 1 is traditional difference Kao Bizi oscillator circuit structure figures.
Fig. 2 is the high amplitude of oscillation voltage controlled oscillator structure chart of existing low pressure：
Wherein, Fig. 2 (a) is the NMOS cross-couplings voltage controlled oscillators based on transformer feedback, and Fig. 2 (b) is using extra
Inductor Kao Bizi voltage controlled oscillators.
A kind of circuit structure diagram for difference Kao Bizi voltage controlled oscillators that Fig. 3 provides for the present invention.
The circuit structure diagram for another difference Kao Bizi voltage controlled oscillators that Fig. 4 provides for the present invention.
Fig. 5 is the circuit structure diagram of the active circuitry region of difference Kao Bizi voltage controlled oscillators in Fig. 3.
Fig. 6 is the body end electric current for the nmos pass transistor that size is 2 μm/0.18 μm with source power VbsThe curve of change.
Fig. 7 is voltage waveform view of a kind of difference Kao Bizi voltage controlled oscillators at each node shown in Fig. 3.
Steady state voltage, the current waveform simulation result for a kind of difference Kao Bizi voltage controlled oscillators that Fig. 8 provides for the present invention.
Phases of the Fig. 9 for a kind of difference Kao Bizi voltage controlled oscillators of the invention provided under 3.76GHz frequencies of oscillation is made an uproar
Acoustic performance simulation result.
A kind of circuit knot for difference Kao Bizi voltage controlled oscillators based on BJT/HBT transistors that Figure 10 provides for the present invention
Composition.
Figure 11 shakes for a kind of difference Kao Bizi based on NPN BJT transistors and nmos pass transistor of the invention provided is voltage-controlled
Swing the circuit structure diagram of device.
Embodiment
For ease of skilled artisan understands that the technology contents of the present invention, enter one to present invention below in conjunction with the accompanying drawings
Step explaination.
It is illustrated in figure 3 one of the solution of the present invention, a kind of difference Kao Bizi voltage controlled oscillators, including：First negative resistance electricity
Road 101, the second negative resistance circuit 102, negative resistance enhancing circuit 103 and resonance circuit 104；The resonance circuit 104 is inductance electricity
Hold parallel resonance structure, determine the frequency of oscillation of oscillator and the function of frequency tuning is provided；First negative resistance circuit 101 and second
Negative resistance circuit 102 is used to produce negative resistance, to offset the ohmic losses of resonance circuit 104, so as to produce stable vibration output；Institute
The negative resistance that negative resistance enhancing circuit 103 is used to further improve oscillator active circuitry is stated, so as to shorten the Induction Peried of oscillator；
The 5th end that the first end of first negative resistance circuit 101 strengthens circuit 103 with negative resistance is connected, the first negative resistance circuit
101 the second end is connected with the first end of resonance circuit 104；Second end of the resonance circuit 104 and the second negative resistance circuit 102
The second end connection, the 3rd termination power V of resonance circuit 104DD, the 4th termination frequency tuning voltage of resonance circuit 104
Vtune；The 5th end that the first end of second negative resistance circuit 102 strengthens circuit 103 with negative resistance is connected；The first negative resistance electricity
The first end that 3rd end on road 101 strengthens circuit 103 with negative resistance is connected, and the second end and the negative resistance of the first negative resistance circuit 101 strengthen
The second end connection of circuit 103；3rd end of second negative resistance circuit 102 strengthens the three-terminal link of circuit 103 with negative resistance,
The 4th end that second end of the second negative resistance circuit 102 strengthens circuit 103 with negative resistance is connected；The of negative resistance enhancing circuit 103
Five ends are grounded.
As shown in figure 3, resonance circuit 104 includes：First inductance L1, the second inductance L2, the first variodenser Cvar1And second
Variodenser Cvar2；The first variodenser Cvar1First end and the first inductance L1First end connection, collectively as resonance circuit
104 first end Vop, for exporting the first oscillator signal；The first inductance L1The second end and the second inductance L2First end
Connection, collectively as the 3rd end of resonance circuit 104；The second inductance L2The second end and the second variodenser Cvar2First
End connection, collectively as the second end V of resonance circuit 104on, for exporting the second oscillator signal；The second variodenser Cvar2
The second end and the first variodenser Cvar1The second end connection, collectively as the 4th end of resonance circuit 104.
As shown in figure 3, the first negative resistance circuit 101 includes：First nmos pass transistor M1, the first electric capacity C1And second electric capacity
C2；First nmos pass transistor M1Grid be used as the second end of the first negative resistance circuit 101, the first nmos pass transistor M1Drain electrode connect
Power supply VDD, the first nmos pass transistor M1Source electrode and the first electric capacity C1First end connection；First nmos pass transistor M1Source electrode with
M1Body end connection, collectively as the 3rd end of the first negative resistance circuit 101；First electric capacity C1The second end and the first NMOS crystal
Pipe M1Grid connection；First nmos pass transistor M1Source electrode also with the second electric capacity C2First end connection；Second electric capacity C2
Two ends as the first negative resistance circuit 101 first end.
As shown in figure 3, the second negative resistance circuit 102 includes：Second nmos pass transistor M2, the 3rd electric capacity C3And the 4th electric capacity
C4；Second nmos pass transistor M2Grid be used as the second end of the second negative resistance circuit 102, the second nmos pass transistor M2Drain electrode connect
Power supply VDD, the second nmos pass transistor M2Source electrode and the 3rd electric capacity C3First end connection；Second nmos pass transistor M2Source electrode with
M2Body end connection, collectively as the 3rd end of the second negative resistance circuit 102；3rd electric capacity C3The second end and the 2nd NMOS crystal
Pipe M2Grid connection；Second nmos pass transistor M2Source electrode also with the 4th electric capacity C4First end connection；4th electric capacity C4
Two ends as the second negative resistance circuit 102 first end.
As shown in figure 3, negative resistance enhancing circuit 103 includes：3rd nmos pass transistor M3With the 4th nmos pass transistor M4；3rd
Nmos pass transistor M3Drain electrode be used as negative resistance strengthen circuit 103 first end, the 3rd nmos pass transistor M3Grid increase as negative resistance
4th end on forceful electric power road 103；3rd nmos pass transistor M3Source electrode and the 4th nmos pass transistor M4Source electrode connection, collectively as
Negative resistance strengthens the 5th end of circuit 103, the 3rd nmos pass transistor M3Body end and the 4th nmos pass transistor M4Drain electrode connection；The
Four nmos pass transistor M4Drain electrode be used as negative resistance strengthen circuit 103 the 3rd end, the 4th nmos pass transistor M4Grid be used as negative resistance
Strengthen the second end of circuit 103；4th nmos pass transistor M4Body end and the 3rd nmos pass transistor M3Drain electrode connection.
Another scheme of the present invention as shown in figure 4, a kind of difference Kao Bizi voltage controlled oscillators, including：First negative resistance electricity
Road 201, the second negative resistance circuit 202, negative resistance enhancing circuit 203 and resonance circuit 204；The resonance circuit 204 is inductance electricity
Hold parallel resonance structure, determine the frequency of oscillation of oscillator and the function of frequency tuning is provided；First negative resistance circuit 201 and second
Negative resistance circuit 202 is used to produce negative resistance, to offset the ohmic losses of resonance circuit 204, so as to produce stable vibration output；Institute
The negative resistance that negative resistance enhancing circuit 203 is used to further improve oscillator active circuitry is stated, so as to shorten the Induction Peried of oscillator；
The 5th end that the first end of first negative resistance circuit 201 strengthens circuit 203 with negative resistance is connected, the first negative resistance circuit
201 the second end is connected with the first end of resonance circuit 204；Second end of the resonance circuit 204 and the second negative resistance circuit 202
The connection of the second end, the 3rd end ground connection of resonance circuit 204, the 4th termination frequency tuning voltage V of resonance circuit 204tune；Institute
The first end for stating the second negative resistance circuit 202 is connected with the 5th end that negative resistance strengthens circuit 203；First negative resistance circuit 201
The first end that 3rd end strengthens circuit 203 with negative resistance is connected, and the second end and the negative resistance of the first negative resistance circuit 201 strengthen circuit 203
The second end connection；3rd end of second negative resistance circuit 202 strengthens the three-terminal link of circuit 203 with negative resistance, and second is negative
The 4th end that second end of resistance circuit 202 strengthens circuit 203 with negative resistance is connected；5th termination of the negative resistance enhancing circuit 203
Power supply VDD。
As shown in figure 4, resonance circuit 204 includes：First inductance L1, the second inductance L2, the first variodenser Cvar1And second
Variodenser Cvar2；The first variodenser Cvar1First end and the first inductance L1First end connection, collectively as resonance circuit
204 first end Vop, for exporting the first oscillator signal；The first inductance L1The second end and the second inductance L2First end
Connection, collectively as the 3rd end of resonance circuit 204；The second inductance L2The second end and the second variodenser Cvar2First
End connection, collectively as the second end V of resonance circuit 204on, for exporting the second oscillator signal；The second variodenser Cvar2
The second end and the first variodenser Cvar1The second end connection, collectively as the 4th end of resonance circuit 204.
As shown in figure 4, the first negative resistance circuit 201 includes：First PMOS transistor M1, the first electric capacity C1And second electric capacity
C2；The first PMOS transistor M1Grid be used as the second end of the first negative resistance circuit 201, the first PMOS transistor M1Leakage
Pole is grounded, the first PMOS transistor M1Source electrode be used as the 3rd end of the first negative resistance circuit 201, the first PMOS transistor M1Source
Pole and the first electric capacity C1First end connection；The first PMOS transistor M1Source electrode and the first PMOS transistor M1Body end
Connection, collectively as the 3rd end of the first negative resistance circuit 201；The first electric capacity C1The second end and the first PMOS transistor M1
Grid connection；The first PMOS transistor M1Source electrode also with the second electric capacity C2First end connection；The second electric capacity C2
The second end as the first negative resistance circuit 201 first end.
As shown in figure 4, the second negative resistance circuit 202 includes：Second PMOS transistor M2, the 3rd electric capacity C3And the 4th electric capacity
C4；The second PMOS transistor M2Grid be used as the second end of the second negative resistance circuit 202, the second PMOS transistor M2Leakage
Pole is grounded, the second PMOS transistor M2Source electrode be used as the 3rd end of the second negative resistance circuit 202, the second PMOS transistor M2Source
Pole and the 3rd electric capacity C3First end connection；The second PMOS transistor M2Source electrode and the second PMOS transistor M2Body end
Connection, collectively as the 3rd end of the second negative resistance circuit 202；The 3rd electric capacity C3The second end and the second PMOS transistor M2
Grid connection；The second PMOS transistor M2Source electrode also with the 4th electric capacity C4First end connection；The 4th electric capacity C4
The second end as the second negative resistance circuit 202 first end.
As shown in figure 4, negative resistance enhancing circuit 203 includes：3rd PMOS transistor M3With the 4th PMOS transistor M4；It is described
3rd PMOS transistor M3Drain electrode be used as negative resistance strengthen circuit 203 first end, the 3rd PMOS transistor M3Grid as negative
4th end of resistance enhancing circuit 203；The 3rd PMOS transistor M3Source electrode and the 4th PMOS transistor M4Source electrode connection,
Strengthen the 5th end of circuit 203 collectively as negative resistance；The 3rd PMOS transistor M3Body end and the 4th PMOS transistor M4's
Drain electrode connection；The 4th PMOS transistor M4Drain electrode be used as negative resistance strengthen circuit 203 the 3rd end, the 4th PMOS transistor
M4Grid as negative resistance strengthen circuit 203 the second end；The 4th PMOS transistor M4Body end and the 3rd PMOS transistor
M3Drain electrode connection.
Present disclosure is illustrated by specific workflow with reference to Fig. 3：
The first inductance L in resonance circuit 1041, the second inductance L2, the first variodenser Cvar1And the second variodenser Cvar2
Parallel inductor capacitor resonance circuit is formed, the resonant frequency of oscillating circuit is determined；By to port VtuneApply variable voltage,
So as to change the first variodenser Cvar1With the second variodenser Cvar2Capacitance, realize the tuber function of frequency of oscillation.
First negative resistance circuit 101 and the second negative resistance circuit 102 constitute the main negative resistance circuit of oscillator；Capacitor C1And C2
The capacitive divider of composition is in the first nmos pass transistor M1Grid and source electrode formation positive feedback so that it is humorous to compensate to produce negative resistance
Shake the ohmic losses of circuit 104；Similarly, capacitor C3And C4The capacitive divider of composition is in M2Grid and source electrode form positive and negative
Feedback, so as to produce negative resistance to compensate the ohmic losses of resonance circuit 104；First negative resistance circuit 101 and the second negative resistance circuit 102 are logical
Cross capacitor C2And C4The coupling at common ground end realize differential vibrating.
Negative resistance enhancing circuit 103 provides extra negative resistance in the self-oscillating of circuit, enhances active circuitry region
Total negative resistance, so as to reduce the starting of oscillation difficulty of oscillator, shortens the Induction Peried of oscillator；M3And M4Body end pass through respectively
Low vibration amplitude of oscillation node VsnAnd VspDynamic body bias is realized, this is dynamically reducing M3And M4Threshold voltage while, also by M3
And M4Body mutual conductance use the negative resistance for further enhancing circuit.
High vibration amplitude of oscillation node V in the difference Kao Bizi voltage controlled oscillatorsopAnd VonDifferential vibrating output letter is provided
Number.
Supply voltage needed for the reduction that the present invention has and negative resistance enhancing principle are specially：With the nmos pass transistor in Fig. 3
M3Exemplified by, its body end is by nmos pass transistor M2Source voltage dynamic bias.As node VsnVoltage when being in positive half cycle, can be with
Obtain nmos pass transistor M3Threshold voltage Vth,M3For
Wherein, Vth0It is the intrinsic threshold voltage of nmos pass transistor, γ represents body-effect coefficient, ΦFIt is the work content of silicon substrate
Number, Vs,DCRepresent nmos pass transistor M2The static bias voltage of source electrode, VoThe Single-end output amplitude of oscillation of oscillator is represented, ω is vibration
Angular frequency, n is multi-tap capacitance C1、C2(and C3、C4) intrinsic standoff ratio, be given by
Wherein, C1=C3、C2=C4.From formula (1), because the use of dynamic forward body bias structure, nmos pass transistor
M3Threshold voltage be reduced.Similarly, nmos pass transistor M4Threshold voltage be also dynamically adjusted, therefore reduce circuit starting of oscillation
Required minimum power supply voltage,.
Dynamic body bias technology is except reduction nmos pass transistor M3And M4Threshold voltage (therefore needed for reducing circuit
Minimum power source voltage) outside, also reduce the starting of oscillation difficulty of oscillator.Fig. 5 gives the active of the voltage controlled oscillator shown in Fig. 3
The schematic diagram of circuit part, its difference admittance Y is can obtain using small-signal equivalent circuit analysis methodINReal part be
Wherein, gm1And gm3Respectively nmos pass transistor M1/M2And M3/M4Small-signal transconductance, gmb3It is nmos pass transistor M3/
M4Small-signal body mutual conductance.It can similarly obtain, the small-signal conductance of traditional drain-source feedback differential Kao Bizi oscillators shown in Fig. 1 is
Wherein, gm1For nmos pass transistor M1/M2Small-signal transconductance.
Contrast (3) and formula (4) are understood：Under equal bias condition, the negative conductance ratio of Kao Bizi oscillators of the invention
The negative conductance of traditional Kao Bizi oscillators improves about 0.5 { 1+ (gm3+gmb3)/[(1–n)(gm1–gmb3)]}.Therefore, same
Etc. under power consumption, Kao Bizi oscillators of the invention have shorter Induction Peried；Or under identical Induction Peried, the present invention
Kao Bizi oscillators power consumption it is lower.
By reasonably selecting multi-tap capacitance C1、C2(and C3、C4) intrinsic standoff ratio n, the output voltage swing of oscillator can be improved
And reduce its phase noise.As shown in figure 3, as nmos pass transistor M1/M2During into triode region, Kao Bizi of the invention is voltage-controlled
The Single-end output amplitude of oscillation V of oscillatoroIt can be approximated to be
Wherein, VDDAnd VSRespectively supply voltage and low amplitude of oscillation node Vsp/VsnStable state average voltage.Can by formula (5)
Know：By selecting less n, the output voltage swing of oscillator can be improved.Although less n is unfavorable for the starting of oscillation of circuit,
The use of negative resistance enhancing circuit reduces the difficulty of circuit starting of oscillation to a certain extent, therefore less n can be selected to obtain
The height output amplitude of oscillation and relatively low distal end phase noise.
When the output voltage swing of oscillator is very big, the threshold voltage dynamic of transistor is directly realized using high amplitude of oscillation node
Regulation can cause body-leakage, the body-source parasitic diode forward conduction of transistor, therefore can significantly reduce the quality of resonance circuit
Factor, so as to deteriorate the phase noise performance of oscillator.Fig. 6 illustrates the nmos pass transistor that a breadth length ratio is 2 μm/0.18 μm
Body end electric current with source power VbsThe curve of change, it can be seen that：Work as VbsDuring more than 0.8V, the body end electric current of transistor is anxious
Increase severely big, now the parasitic diode forward conduction of nmos pass transistor.As shown in fig. 7, the present invention is consolidated using Kao Bizi oscillators
Some multi-tap capacitances obtain low amplitude of oscillation node, by by amplitude of oscillation node V two lowspAnd VsnIt is respectively connecting to nmos pass transistor M4With
M3Body end realize dynamic body bias, so as to avoid the forward conduction problem of transistor parasitic diode under high voltages.
It is with reference to the concrete principle of Fig. 7, the present invention low phase noise characteristic having：
1. it is theoretical from Lesson：The distal end phase noise of oscillator and the power of oscillator signal are inversely proportional.By adjusting
The ratio of multi-tap capacitance is saved, the output voltage swing of difference Kao Bizi oscillators of the invention can exceed power rail, therefore can reduce
Distal end phase noise (1/f2Region)；
2. it is theoretical from Hajimiri and Lee pulse sensitivity function：The pulse working mode of Kao Bizi oscillators
So that nmos pass transistor M1And M2Channel noise it is when output signal is in peak value maximum, and now outputting oscillation signal
Phase is least sensitivity, therefore nmos pass transistor M to noise1And M2Channel noise be converted into less phase noise, institute
The characteristics of inherently there is low phase noise with Kao Bizi oscillators；
3. the flicker noise of transistor and the trap of silicon-grid oxygen contact surface have to capture/release process of minority carrier
Close, and the transistor being operated under on off state is by modulating the time constant of capture/release so that its flicker noise is lower.It is negative
Nmos pass transistor M in resistance enhancing circuit3And M4Periodically it is operated in inversion regime and accumulation area, this switch working state drop
Low transistor M3And M4Flicker noise；In addition dynamic body bias technology is used so that nmos pass transistor M3And M4Closing shape
Enter deep accumulation area under state, This further reduces its flicker noise, therefore also reduce the near-end phase noise (1/ of oscillator
f3Region)；
4.NMOS transistors M1And M2Source electrode be separation, i.e., both without common-mode node, therefore by the two of common-mode node
The flicker noise up-conversion that subharmonic is produced greatly is suppressed, so as to improve the near-end phase noise performance of oscillator.
The effect of the present invention is illustrated below by specific experimental data, in this embodiment, difference examines ratio
Hereby voltage-controlled oscillator circuit is realized using 0.18 μm of RF CMOS technology of TSMC, is powered using 0.6V power supplys, the stable state work of circuit
Make electric current for 7.85mA.In order to obtain the high vibration amplitude of oscillation, value of the capacitance partial pressure than n of selection is 1/5.
Fig. 8 gives the voltage waveform and four NMOS crystal of each node of difference Kao Bizi voltage controlled oscillators shown in Fig. 3
The drain current wavefonn of pipe, as known in the figure：Voltage controlled oscillator output node VopAnd VonThe amplitude of oscillation exceeded supply voltage and
Ground, realizes high amplitude of oscillation output.Low amplitude of oscillation node VspAnd VsnCeiling voltage be about 0.5V (be less than 0.6V supply voltage),
Therefore dynamic body bias nmos pass transistor M is avoided3And M4Body-leakage, body-source parasitic diode forward conduction.
Fig. 9 gives phase noise performance emulation knot of the difference Kao Bizi voltage controlled oscillators under 3.76GHz frequencies of oscillation
Really：Phase noise at 10kHz/100kHz/1MHz frequency deviations is respectively -77.89/ -104.64/ -127.66dBc/Hz, phase
The 1/f of noise3Corner frequency is only 60kHz.Consider the power consumption and phase noise performance of voltage controlled oscillator, obtained by formula (6)
The figure of merit (Figure-of-Merit, FoM) to oscillator is 192.4dBc/Hz.
FoM=20lg (f0/Δf)–10lg(Pdiss/1mW)–L(Δf) (6)
Result above shows, a kind of difference Kao Bizi voltage controlled oscillators showing under the conditions of operating on low voltage of the application
Excellent phase noise performance, has obtained exceeding electricity in the case of without using complicated transformer coupled or additional inductance
The Single-end output amplitude of oscillation of source voltage, has the advantages that low voltage operating, high-performance and low cost.
One of ordinary skill in the art will be appreciated that embodiment described here is to aid in reader and understands this hair
Bright principle, it should be understood that protection scope of the present invention is not limited to such especially statement and embodiment.For ability
For the technical staff in domain, the transistor M in the present invention1、M2、M3、M4It can also be bipolar junction transistor BJT or hetero-junctions
Bipolar transistor HBT, is by transistor M as shown in Figure 101、M2、M3、M4Type selecting connects for bipolar junction transistor BJT circuit
Schematic diagram, M1、M2、M3、M4Type selecting also refers to Figure 10 connection side for heterojunction bipolar transistor HBT physical circuit connection
Formula；
And transistor M1、M2、M3、M4It can be being applied in combination for PMOS, NMOS, BJT, HBT, be as shown in figure 11 M1、
M2Type selecting is NPN type BJT, M3、M4Type selecting is NMOS combinational circuit connection diagram, and above-mentioned deformation can realize the application's
Technique effect；Technical scheme can have a variety of changes and change in a word.Within the spirit and principles of the invention, institute
Any modification, equivalent substitution and improvements of work etc., should be included within scope of the presently claimed invention.
Claims (10)
1. a kind of difference Kao Bizi voltage controlled oscillators, it is characterised in that including：First negative resistance circuit, the second negative resistance circuit, negative resistance
Strengthen circuit and resonance circuit；The resonance circuit is inductance capacitance parallel resonance structure, determines the frequency of oscillation of oscillator；
First negative resistance circuit and the second negative resistance circuit are used to produce negative resistance, to offset the ohmic losses of resonance circuit, so as to produce
Stable vibration output；The negative resistance enhancing circuit is used for the negative resistance for improving oscillator, reduces starting of oscillation difficulty；
The 5th end that the first end of first negative resistance circuit and negative resistance strengthen circuit be connected, the second end of the first negative resistance circuit and
The first end connection of resonance circuit；Second end of the resonance circuit is connected with the second end of the second negative resistance circuit, resonance circuit
The 3rd termination power VDD, the 4th termination frequency tuning voltage of resonance circuit；The first end of second negative resistance circuit is with bearing
The 5th end connection of resistance enhancing circuit；The first end that 3rd end of first negative resistance circuit strengthens circuit with negative resistance is connected, the
The second end that second end of one negative resistance circuit strengthens circuit with negative resistance is connected；3rd end of second negative resistance circuit increases with negative resistance
The three-terminal link on forceful electric power road, the second end of the second negative resistance circuit is connected with the 4th end that negative resistance strengthens circuit；The negative resistance increases
The 5th end ground connection on forceful electric power road.
2. a kind of difference Kao Bizi voltage controlled oscillators according to claim 1, it is characterised in that the resonance circuit bag
Include：First inductance, the second inductance, the first variodenser and the second variodenser；The first end of first variodenser and the first electricity
The first end connection of sense, the first end collectively as resonance circuit is used to export the first oscillator signal；The of first inductance
Two ends are connected with the first end of the second inductance, collectively as the 3rd end of resonance circuit；Second end of second inductance and the
The first end connection of two variodensers, is used to export the second oscillator signal collectively as the second end of resonance circuit；Described second becomes
Second end of container is connected with the second end of the first variodenser, collectively as the 4th end of resonance circuit.
3. a kind of difference Kao Bizi voltage controlled oscillators according to claim 1, it is characterised in that first negative resistance circuit
Including：First nmos pass transistor, the first electric capacity and the second electric capacity；The grid of first nmos pass transistor is used as the first negative resistance
Second end of circuit, the drain electrode of the first nmos pass transistor meets power supply VDD, the of the source electrode of the first nmos pass transistor and the first electric capacity
One end is connected；The source electrode of first nmos pass transistor is connected with the body end of the first nmos pass transistor, collectively as the first negative resistance
3rd end of circuit；Second end of first electric capacity is connected with the grid of the first nmos pass transistor；The first NMOS crystal
First end of the source electrode of pipe also with the second electric capacity is connected；Second end of second electric capacity is used as the first of the first negative resistance circuit
End.
4. a kind of difference Kao Bizi voltage controlled oscillators according to claim 1, it is characterised in that second negative resistance circuit
Including：Second nmos pass transistor, the 3rd electric capacity and the 4th electric capacity；The grid of second nmos pass transistor is used as the second negative resistance
Second end of circuit, the drain electrode of the second nmos pass transistor meets power supply VDD, the of the source electrode of the second nmos pass transistor and the 3rd electric capacity
One end is connected；The source electrode of second nmos pass transistor is connected with the body end of the second nmos pass transistor, collectively as the second negative resistance
3rd end of circuit；Second end of the 3rd electric capacity is connected with the grid of the second nmos pass transistor；The 2nd NMOS crystal
First end of the source electrode of pipe also with the 4th electric capacity is connected；Second end of the 4th electric capacity is used as the first of the second negative resistance circuit
End.
5. a kind of difference Kao Bizi voltage controlled oscillators according to claim 1, it is characterised in that the negative resistance strengthens circuit
Including：3rd nmos pass transistor and the 4th nmos pass transistor；The drain electrode of 3rd nmos pass transistor strengthens circuit as negative resistance
First end, the grid of the 3rd nmos pass transistor strengthens the 4th end of circuit as negative resistance；The source of 3rd nmos pass transistor
Pole is connected with the source electrode of the 4th nmos pass transistor, strengthens the 5th end of circuit collectively as negative resistance；3rd nmos pass transistor
Body end be connected with the drain electrode of the 4th nmos pass transistor；The drain electrode of 4th nmos pass transistor strengthens the of circuit as negative resistance
Three ends, the grid of the 4th nmos pass transistor strengthens the second end of circuit as negative resistance；The body end of 4th nmos pass transistor with
The drain electrode connection of 3rd nmos pass transistor.
6. a kind of difference Kao Bizi voltage controlled oscillators, it is characterised in that including：First negative resistance circuit, the second negative resistance circuit, negative resistance
Strengthen circuit and resonance circuit；The resonance circuit is inductance capacitance parallel resonance structure, determines the frequency of oscillation of oscillator；
First negative resistance circuit and the second negative resistance circuit are used to produce negative resistance, to offset the ohmic losses of resonance circuit, so as to produce
Stable vibration output；The negative resistance enhancing circuit is used for the negative resistance for improving oscillator, reduces starting of oscillation difficulty；
The 5th end that the first end of first negative resistance circuit and negative resistance strengthen circuit be connected, the second end of the first negative resistance circuit and
The first end connection of resonance circuit；Second end of the resonance circuit is connected with the second end of the second negative resistance circuit, resonance circuit
The 3rd end ground connection, resonance circuit the 4th termination frequency tuning voltage；The first end of second negative resistance circuit increases with negative resistance
The 5th end connection on forceful electric power road；The first end that 3rd end of first negative resistance circuit strengthens circuit with negative resistance is connected, and first is negative
The second end that second end of resistance circuit strengthens circuit with negative resistance is connected；3rd end of second negative resistance circuit strengthens electricity with negative resistance
The three-terminal link on road, the second end of the second negative resistance circuit is connected with the 4th end that negative resistance strengthens circuit；The negative resistance enhancing electricity
The 5th termination power V on roadDD。
7. a kind of difference Kao Bizi voltage controlled oscillators according to claim 6, it is characterised in that the resonance circuit bag
Include：First inductance, the second inductance, the first variodenser and the second variodenser；The first end of first variodenser and the first electricity
The first end connection of sense, the first end collectively as resonance circuit is used to export the first oscillator signal；The of first inductance
Two ends are connected with the first end of the second inductance, collectively as the 3rd end of resonance circuit；Second end of second inductance and the
The first end connection of two variodensers, is used to export the second oscillator signal collectively as the second end of resonance circuit；Described second becomes
Second end of container is connected with the second end of the first variodenser, collectively as the 4th end of resonance circuit.
8. a kind of difference Kao Bizi voltage controlled oscillators according to claim 6, it is characterised in that first negative resistance circuit
Including：First PMOS transistor, the first electric capacity and the second electric capacity；The grid of first PMOS transistor is used as the first negative resistance
Second end of circuit, the grounded drain of the first PMOS transistor, the source electrode of the first PMOS transistor is used as the first negative resistance circuit
3rd end, the source electrode of the first PMOS transistor is connected with the first end of the first electric capacity；The source electrode of first PMOS transistor with
The body end connection of first PMOS transistor, collectively as the 3rd end of the first negative resistance circuit；Second end of first electric capacity with
The grid connection of first PMOS transistor；First end of the source electrode of first PMOS transistor also with the second electric capacity is connected；Institute
The second end for stating the second electric capacity is used as the first end of the first negative resistance circuit.
9. a kind of difference Kao Bizi voltage controlled oscillators according to claim 6, it is characterised in that second negative resistance circuit
Including：Second PMOS transistor, the 3rd electric capacity and the 4th electric capacity；The grid of second PMOS transistor is used as the second negative resistance
Second end of circuit, the grounded drain of the second PMOS transistor, the source electrode of the second PMOS transistor is used as the second negative resistance circuit
3rd end, the source electrode of the second PMOS transistor is connected with the first end of the 3rd electric capacity；The source electrode of second PMOS transistor with
The body end connection of second PMOS transistor, collectively as the 3rd end of the second negative resistance circuit；Second end of the 3rd electric capacity with
The grid connection of second PMOS transistor；First end of the source electrode of second PMOS transistor also with the 4th electric capacity is connected；Institute
The second end for stating the 4th electric capacity is used as the first end of the second negative resistance circuit.
10. a kind of difference Kao Bizi voltage controlled oscillators according to claim 6, it is characterised in that the negative resistance enhancing electricity
Road includes：3rd PMOS transistor and the 4th PMOS transistor；The drain electrode of 3rd PMOS transistor strengthens electricity as negative resistance
The first end on road, the grid of the 3rd PMOS transistor strengthens the 4th end of circuit as negative resistance；3rd PMOS transistor
Source electrode is connected with the source electrode of the 4th PMOS transistor, strengthens the 5th end of circuit collectively as negative resistance；The 3rd PMOS crystal
The body end of pipe is connected with the drain electrode of the 4th PMOS transistor；The drain electrode of 4th PMOS transistor strengthens circuit as negative resistance
3rd end, the grid of the 4th PMOS transistor strengthens the second end of circuit as negative resistance；The body end of 4th PMOS transistor
Drain electrode with the 3rd PMOS transistor is connected.
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| US7170358B2 (en) * | 2004-06-15 | 2007-01-30 | Matsushita Electric Industrial Co., Ltd. | Voltage controlled oscillator, and PLL circuit and wireless communication apparatus using the same |
| US7961056B2 (en) * | 2009-09-10 | 2011-06-14 | Intel Corporation | Low phase noise voltage controlled oscillator |
| JP2012090130A (en) * | 2010-10-21 | 2012-05-10 | Renesas Electronics Corp | Semiconductor device |
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