CN107239088B - 一种激光加工晶圆的控制方法及*** - Google Patents
一种激光加工晶圆的控制方法及*** Download PDFInfo
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- CN107239088B CN107239088B CN201710574394.5A CN201710574394A CN107239088B CN 107239088 B CN107239088 B CN 107239088B CN 201710574394 A CN201710574394 A CN 201710574394A CN 107239088 B CN107239088 B CN 107239088B
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- Prior art keywords
- laser
- wafer
- liquid crystal
- silicon
- laser beam
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- 238000012545 processing Methods 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 63
- 239000010703 silicon Substances 0.000 claims abstract description 63
- 238000006073 displacement reaction Methods 0.000 claims abstract description 37
- 238000001459 lithography Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 61
- 238000009826 distribution Methods 0.000 claims description 13
- 238000001514 detection method Methods 0.000 claims description 12
- 238000012360 testing method Methods 0.000 claims description 10
- 241001270131 Agaricus moelleri Species 0.000 claims description 9
- 230000001276 controlling effect Effects 0.000 claims description 7
- 230000005856 abnormality Effects 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 230000011514 reflex Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims 1
- 238000003754 machining Methods 0.000 abstract description 11
- 239000000463 material Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000010606 normalization Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D27/00—Simultaneous control of variables covered by two or more of main groups G05D1/00 - G05D25/00
- G05D27/02—Simultaneous control of variables covered by two or more of main groups G05D1/00 - G05D25/00 characterised by the use of electric means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
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CN201710574394.5A CN107239088B (zh) | 2017-07-14 | 2017-07-14 | 一种激光加工晶圆的控制方法及*** |
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CN201710574394.5A CN107239088B (zh) | 2017-07-14 | 2017-07-14 | 一种激光加工晶圆的控制方法及*** |
Publications (2)
Publication Number | Publication Date |
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CN107239088A CN107239088A (zh) | 2017-10-10 |
CN107239088B true CN107239088B (zh) | 2018-10-09 |
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CN201710574394.5A Active CN107239088B (zh) | 2017-07-14 | 2017-07-14 | 一种激光加工晶圆的控制方法及*** |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109085558B (zh) * | 2018-09-21 | 2023-12-29 | 深圳市速腾聚创科技有限公司 | 相控阵激光雷达及其控制方法 |
CN109530931B (zh) * | 2018-12-27 | 2021-01-12 | 北京中科镭特电子有限公司 | 一种激光加工芯片的方法及装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1799753A (zh) * | 2005-01-05 | 2006-07-12 | 株式会社迪斯科 | 激光束加工机 |
CN202494863U (zh) * | 2012-04-06 | 2012-10-17 | 胡贞 | 一种通过对高斯光斑检测定位的均匀光刻*** |
CN102896421A (zh) * | 2012-07-30 | 2013-01-30 | 沈明亚 | 采用lcos的激光微加工***及其加工方法 |
JP2013230477A (ja) * | 2012-04-27 | 2013-11-14 | Disco Corp | レーザー加工装置及びレーザー加工方法 |
CN106938370A (zh) * | 2015-12-30 | 2017-07-11 | 上海微电子装备有限公司 | 一种激光加工***及方法 |
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2017
- 2017-07-14 CN CN201710574394.5A patent/CN107239088B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1799753A (zh) * | 2005-01-05 | 2006-07-12 | 株式会社迪斯科 | 激光束加工机 |
CN202494863U (zh) * | 2012-04-06 | 2012-10-17 | 胡贞 | 一种通过对高斯光斑检测定位的均匀光刻*** |
JP2013230477A (ja) * | 2012-04-27 | 2013-11-14 | Disco Corp | レーザー加工装置及びレーザー加工方法 |
CN102896421A (zh) * | 2012-07-30 | 2013-01-30 | 沈明亚 | 采用lcos的激光微加工***及其加工方法 |
CN106938370A (zh) * | 2015-12-30 | 2017-07-11 | 上海微电子装备有限公司 | 一种激光加工***及方法 |
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CN107239088A (zh) | 2017-10-10 |
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Effective date of registration: 20190530 Address after: 100176 Beijing Daxing District Beijing Economic and Technological Development Zone Patentee after: BEIJING ZHONGKE LEITE ELECTRONICS Co.,Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
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Denomination of invention: Control method and system of laser processing wafer Effective date of registration: 20200114 Granted publication date: 20181009 Pledgee: Beijing Zhongke Micro Intellectual Property Service Co.,Ltd. Pledgor: BEIJING ZHONGKE LEITE ELECTRONICS Co.,Ltd. Registration number: Y2020990000053 |
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Date of cancellation: 20220614 Granted publication date: 20181009 Pledgee: Beijing Zhongke Micro Intellectual Property Service Co.,Ltd. Pledgor: BEIJING ZHONGKE LEITE ELECTRONICS Co.,Ltd. Registration number: Y2020990000053 |