CN107236988A - A kind of polycrystalline air cooling silicon ingot furnace - Google Patents
A kind of polycrystalline air cooling silicon ingot furnace Download PDFInfo
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- CN107236988A CN107236988A CN201710566503.9A CN201710566503A CN107236988A CN 107236988 A CN107236988 A CN 107236988A CN 201710566503 A CN201710566503 A CN 201710566503A CN 107236988 A CN107236988 A CN 107236988A
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- platforms
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- polycrystalline
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- silicon ingot
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of polycrystalline air cooling silicon ingot furnace, including body of heater, the graphite bottom plate for being arranged on the DS platforms of the bottom of furnace body and being arranged between the body of heater and the DS platforms, also include the balanced heat-conducting plate being arranged between the graphite bottom plate and the DS platforms, the balanced heat-conducting plate is provided with multiple through holes, and the inlet port of area from the DS platforms of the through hole of the balanced heat-conducting plate successively decreases to outlet port.The polycrystalline air cooling silicon ingot furnace, by setting the balanced heat-conducting plate with through hole between the graphite bottom plate of bottom of furnace body and DS platforms, do not contacted directly between DS platforms and graphite bottom plate at lead to the hole site, reduce heat transfer, and the area of the through hole of balanced heat-conducting plate successively decreases from the inlet port of the DS platforms to outlet port, so that being reduced in cold fragment position in the heat that material and crystal growing stage absorb, balanced heat transfer of the DS platforms inlet port to outlet port, so that two ends uniformity of temperature profile, is conducive to material interface and the adjustment of the flatness in long crystal boundary face.
Description
Technical field
The present invention relates to polycrystalline cast ingot technical field, more particularly to a kind of polycrystalline air cooling silicon ingot furnace.
Background technology
It is constantly soaring with energy crisis, environmental pollution and global temperatures, the mankind in the urgent need to changing this general layout,
And photovoltaic generation have the advantages that using scope it is wide, environmentally safe, will not emission greenhouse gas, be reply and slow down this
The powerful mean of one change.The factor of influence photovoltaic generation has the manufacturing cost of photovoltaic cell and the generating efficiency of photovoltaic cell
And service life.
The strong guarantee that high-quality silicon chip is high-efficiency photovoltaic battery is manufactured using polycrystalline ingot furnace.Polycrystal silicon ingot stove has very
A variety of, wherein air cooling stove is one of conventional type of furnace in current polycrystalline ingot furnace.Set inside the bottom heat conduction DS platforms of air cooling stove
Gas flow channel, the purpose that heat realizes heat conduction is taken away by gas, and gas is heated by DS platforms by absorbing heat, because
This air cooling stove DS platforms gas access end belongs to cold end, and gas outlet end belongs to hot junction.The air cooling stove of conventional structure uses bottom
Portion's DS platforms are designed as the internal radiator structure for having gas to circulate, and gas is by taking away the heat that silicon ingot top is transmitted inside DS platforms
Amount, forms longitudinal direction radiating, meets the concept of directional solidification growth.Because air cooling stove air inlet and gas outlet are distributed in the two of DS platforms
Side, will then cause DS platform bottom temps skewness to weigh, and the long brilliant and material process cast to silicon ingot produces certain
Influence.To long brilliant process, the unequal Temperature Distribution in DS platforms two ends causes the difference of the brilliant speed of silicon ingot two ends length, and inlet end length is brilliant
Speed is very fast, and length crystalline substance speed in outlet side is slower, therefore can cause the inclination in long crystal boundary face.To material process, inlet end temperature compared with
Low, material speed is slower, and silicon material surplus is higher, and outlet side temperature is higher, and material speed, silicon material surplus is less, this
The Temperature Distribution of sample exerts an adverse impact to the control for having seed crystal high-efficiency polycrystalline seed crystal residual altitude, to without seed crystal high-efficiency polycrystalline
The uniformity of bottom forming core can also produce large effect.
The content of the invention
The invention provides a kind of polycrystalline air cooling silicon ingot furnace, balanced air inlet and the radiating of two sections of gas outlet so that two
The temperature at end is impartial, the Temperature Distribution of balanced DS platforms, improves polycrystalline cast ingot quality.
In order to solve the above technical problems, the embodiments of the invention provide a kind of polycrystalline air cooling silicon ingot furnace, including body of heater, set
The DS platforms and the graphite bottom plate that is arranged between the body of heater and the DS platforms in the bottom of furnace body are put, in addition to is arranged on institute
The balanced heat-conducting plate between graphite bottom plate and the DS platforms is stated, the balanced heat-conducting plate is provided with multiple through holes, and the equilibrium is led
The inlet port of the area of the through hole of hot plate from the DS platforms successively decreases to outlet port.
Wherein, the balanced heat-conducting plate is identical with the shape and size of the upper surface of the DS platforms.
Wherein, the through hole includes at least one of circular hole, elliptical aperture and square hole.
Wherein, it is equal with the quantity of the through hole of the inlet port different distance of the DS.
Wherein, the spacing of the through hole adjacent with the inlet port different distance of the DS is equal.
Wherein, the through hole is circular hole, a diameter of 5cm~10cm of the circular hole.
Wherein, it is equal with the diameter of the equidistant through hole of the inlet port of the DS.
Wherein, the thickness of the balanced heat-conducting plate is 3mm~5mm.
Wherein, the balanced heat-conducting plate is graphite heat conducting balancing disk.
The polycrystalline air cooling silicon ingot furnace that the embodiment of the present invention is provided, compared with prior art, with advantages below：
Polycrystalline air cooling silicon ingot furnace provided in an embodiment of the present invention, including body of heater, the DS platforms for being arranged on the bottom of furnace body
And the graphite bottom plate being arranged between the body of heater and the DS platforms, in addition to be arranged on the graphite bottom plate and the DS platforms it
Between balanced heat-conducting plate, the balanced heat-conducting plate is provided with multiple through holes, and the area of the through hole of the balanced heat-conducting plate is from described
The inlet port of DS platforms successively decreases to outlet port.
The polycrystalline air cooling silicon ingot furnace, by being set between the graphite bottom plate and DS platforms of bottom of furnace body with through hole
Do not contacted directly between DS platforms and graphite bottom plate at balanced heat-conducting plate, lead to the hole site, reduce heat transfer, and balanced heat-conducting plate
The inlet port of area from the DS platforms of through hole successively decrease to outlet port so that in cold fragment position in material and crystal growing stage
The heat of absorption is reduced, balanced heat transfer of the DS platforms inlet port to outlet port so that two ends uniformity of temperature profile, is had
Beneficial to the adjustment of material interface and the flatness in long crystal boundary face.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are the present invention
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
These accompanying drawings obtain other accompanying drawings.
Fig. 1 is a kind of structural representation of embodiment of polycrystalline air cooling silicon ingot furnace provided in an embodiment of the present invention
Figure；
Fig. 2 is a kind of embodiment of balanced heat-conducting plate in polycrystalline air cooling silicon ingot furnace provided in an embodiment of the present invention
Structural representation.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1~Fig. 2 is refer to, Fig. 1 is embodied for a kind of of polycrystalline air cooling silicon ingot furnace provided in an embodiment of the present invention
The structural representation of mode；Fig. 2 is balanced heat-conducting plate one kind tool in polycrystalline air cooling silicon ingot furnace provided in an embodiment of the present invention
The structural representation of body embodiment.
In a kind of embodiment, the polycrystalline air cooling silicon ingot furnace, including body of heater 20, it is arranged on the body of heater 20
The DS platforms 40 of bottom and the graphite bottom plate 30 being arranged between the body of heater 20 and the DS platforms 40, in addition to it is arranged on the stone
Balanced heat-conducting plate 10 between black bottom plate 30 and the DS platforms 40, the balanced heat-conducting plate 10 is provided with multiple through holes 11, described
The inlet port 41 of the area of the through hole of balanced heat-conducting plate 10 from the DS platforms 40 successively decreases to outlet port 42.
By setting the balanced heat-conducting plate 10 with through hole between the graphite bottom plate 30 of the bottom of body of heater 20 and DS platforms 40, lead to
Do not contacted directly between hole location DS platforms 40 and graphite bottom plate 30, reduce heat transfer, and the through hole of balanced heat-conducting plate 10
The inlet port 41 of 11 area from the DS platforms 40 successively decreases to outlet port 42 so that in cold fragment position in material and long brilliant rank
The heat that section absorbs is reduced, and the balanced inlet port 41 of DS platforms 40 arrives the heat transfer of outlet port 42 so that two ends temperature point
Cloth is uniform, is conducive to material interface and the adjustment of the flatness in long crystal boundary face, improves polycrystalline cast ingot quality, improve finished product
Rate, reduces production cost.
In order to further improve radiating effect, do not influence to remove balanced heat-conducting plate 10 between graphite bottom plate 30 and DS platforms 40
Heat conduction outside through hole 11, the balanced heat-conducting plate 10 is identical with the shape and size of the upper surface of the DS platforms 40.
The effect of through hole is to obstruct the heat transfer between graphite bottom plate 30 and DS platforms 40 in the present invention, is reduced in DS from entering
The air-flow passed through in gas port takes away the heat of through hole, and the shape for through hole is not specifically limited, and the through hole 11 includes circle
Through hole 11 at least one of hole, elliptical aperture and square hole, i.e., balanced heat-conducting plate 10 can be in circular hole, elliptical aperture and square hole
Any one or more, in addition, the through hole in the present invention in balanced heat-conducting plate 10 can also be other shapes.
It is equal with the quantity of the through hole of the different distance of inlet port 41 of the DS in order to reduce technology difficulty, with
The spacing of the adjacent through hole of the different distance of inlet port 41 of the DS is equal.
By setting the spacing between the through hole 11 of identical quantity, adjacent exhausting hole 11 equal in every row so that carrying out
In the process of through hole 11, the setting of the restriction of technological parameter with full-automatic operation, can be reduced, technique is reduced difficult
Degree, reduces processing cost
In order to reduce manufacturing process difficulty, the shape of the through hole 11 of same row is identical, is all such as square, circular, even
It is identical in the shape of different rows or even all through holes 11, the processing dimension of different rows only so need to be adjusted, without entering
The adjustment of row machining shape, reduces process complexity.
In one embodiment, the through hole 11 is circular hole, the diameter air inlet of the through hole to gas outlet, and diameter is from 10cm
Drop to 5cm, this change procedure can be linear change or nonlinear change, the control of this change can be with
It is designer's designed, designed or is obtained by simulating, the present invention is not especially limited to this.
I.e. described through hole be circular hole, a diameter of 5cm~10cm of the circular hole, the inlet port 41 with the DS is apart from phase
Deng the through hole diameter it is equal.
The present invention is not specifically limited for the thickness of balanced heat-conducting plate 10, as long as can at the lead to the hole site being provided with
Effect with isolation DS platforms 40 and graphite bottom plate 30, the thickness of the general balanced heat-conducting plate 10 is 3mm~5mm, is
It is easy to process and ensures the stability of ingot casting process, the consistency of thickness everywhere of balanced heat-conducting plate 10.
The present invention of material in to(for) balanced heat-conducting plate 10 does not do excessive requirement, as long as general itself have high temperature heat-resistant
The high characteristic of conductance, the general balanced heat-conducting plate 10 is graphite heat conducting balancing disk, and equilibrium heat-conducting plate 10 can also certainly
It is other materials, such as copper coin.
In summary, polycrystalline air cooling silicon ingot furnace provided in an embodiment of the present invention, passes through the graphite bottom plate in bottom of furnace body
Set at the balanced heat-conducting plate with through hole, lead to the hole site and do not contacted directly between DS platforms and graphite bottom plate between DS platforms,
Heat transfer is reduced, and the area of the through hole of balanced heat-conducting plate successively decreases from the inlet port of the DS platforms to outlet port so that
Reduced in cold fragment position in the heat that material and crystal growing stage absorb, balanced heat biography of the DS platforms inlet port to outlet port
Pass so that two ends uniformity of temperature profile, be conducive to material interface and the adjustment of the flatness in long crystal boundary face.
Polycrystalline air cooling silicon ingot furnace provided by the present invention is described in detail above.It is used herein specifically individual
Example is set forth to the principle and embodiment of the present invention, and the explanation of above example is only intended to help to understand the present invention's
Method and its core concept.It should be pointed out that for those skilled in the art, not departing from the principle of the invention
On the premise of, some improvement and modification can also be carried out to the present invention, these are improved and modification also falls into the claims in the present invention
Protection domain in.
Claims (9)
1. a kind of polycrystalline air cooling silicon ingot furnace, including body of heater, it is arranged on the DS platforms of the bottom of furnace body and is arranged on the body of heater
With the graphite bottom plate between the DS platforms, it is characterised in that also including being arranged between the graphite bottom plate and the DS platforms
Balanced heat-conducting plate, the balanced heat-conducting plate is provided with multiple through holes, and the area of the through hole of the balanced heat-conducting plate is from the DS platforms
Inlet port successively decrease to outlet port.
2. polycrystalline air cooling silicon ingot furnace as claimed in claim 1, it is characterised in that the balanced heat-conducting plate is upper with the DS platforms
The shape and size on surface are identical.
3. polycrystalline air cooling silicon ingot furnace as claimed in claim 2, it is characterised in that the through hole includes circular hole, elliptical aperture and side
At least one of hole.
4. polycrystalline air cooling silicon ingot furnace as claimed in claim 3, it is characterised in that with the inlet port different distance of the DS
The quantity of the through hole is equal.
5. polycrystalline air cooling silicon ingot furnace as claimed in claim 4, it is characterised in that with the inlet port different distance of the DS
The spacing of the adjacent through hole is equal.
6. polycrystalline air cooling silicon ingot furnace as claimed in claim 5, it is characterised in that the through hole is circular hole, the circular hole it is straight
Footpath is 5cm~10cm.
7. polycrystalline air cooling silicon ingot furnace as claimed in claim 6, it is characterised in that the inlet port with the DS is equidistant
The diameter of the through hole is equal.
8. polycrystalline air cooling silicon ingot furnace as claimed in claim 7, it is characterised in that the thickness of the balanced heat-conducting plate be 3mm~
5mm。
9. polycrystalline air cooling silicon ingot furnace as claimed in claim 8, it is characterised in that the balanced heat-conducting plate is that graphite heat conducting is balanced
Plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710566503.9A CN107236988B (en) | 2017-07-12 | 2017-07-12 | Polycrystal air cooling silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710566503.9A CN107236988B (en) | 2017-07-12 | 2017-07-12 | Polycrystal air cooling silicon ingot furnace |
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| Publication Number | Publication Date |
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| CN107236988A true CN107236988A (en) | 2017-10-10 |
| CN107236988B CN107236988B (en) | 2020-03-03 |
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| CN201710566503.9A Active CN107236988B (en) | 2017-07-12 | 2017-07-12 | Polycrystal air cooling silicon ingot furnace |
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