CN107230685A - The semiconductor light emitting micro-display and its manufacturing process of a kind of true color - Google Patents
The semiconductor light emitting micro-display and its manufacturing process of a kind of true color Download PDFInfo
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- CN107230685A CN107230685A CN201710408598.1A CN201710408598A CN107230685A CN 107230685 A CN107230685 A CN 107230685A CN 201710408598 A CN201710408598 A CN 201710408598A CN 107230685 A CN107230685 A CN 107230685A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
Abstract
The invention discloses the structure and its manufacturing process of a kind of semiconductor light emitting micro-display of true color.The semiconductor light emitting micro-display of true color includes silicon base, the micro- light emitting diode being arranged in array, transparent planarization layer, colour filter and transparency carrier；Micro- light emitting diode comprises at least first electrode, multilayer non-organic compound and second electrode；Transparent planarization layer is overlying on micro- LED surface, and colour filter is located on transparent planarization layer, and transparency carrier is located on colour filter, and the electric current that micro- light emitting diode is provided by drive circuit is driven, and the first light of transmitting；Colour filter includes some colour filter points, and colour filter point covers micro- light emitting diode in vertical direction, and the first light that micro- light emitting diode is launched is changed into the second light.Manufacture craft is simplified the semiconductor light emitting micro-display of the true color of the present invention compared with prior art, and device uniformity and yield get a promotion.
Description
Technical field
It is particularly a kind of to be based on micro- light emitting diode the present invention relates to the manufacturing technology field of semiconductor light emitting micro-display
The structure and its manufacturing process of device.
Background technology
Light emitting diode (LED) Display Technique based on non-organic luminescent material is widely used for all trades and professions.It is existing
LED is more using sapphire as substrate, and single pixel spacing is more than 100 microns, is mainly used in middle large scale screen.In the nearly eye of Wearable
Display and field of projection display, it is desirable to which use physical area is smaller, the display that integrated level is higher, resolution ratio is bigger, especially
Full-color micro- light-emitting diode display.LED miniscopes by substrate of monocrystalline silicon are preferable selections.But most of micro- LED show at present
It is more than 30 microns to show device pel spacing, and mostly monochrome devices, it is impossible to meets full-color display and requires.Existing full-color micro- LED shows
The technical process for showing device is to make emitting red light device, green light emitting device and blue-light-emitting device in succession on same substrate
Part, it is necessary to by the manufacture craft of the micro- LED device in three roads, cost is high and uniformity is bad, and emitting red light device,
The Making programme of green light emitting device and blue luminescent device is incompatible, and more technological process also reduces finished product yield.
Therefore, those skilled in the art is directed to developing a kind of semiconductor light emitting micro display of significantly more efficient true color
Device, simplifies production procedure, and device uniformity and yield is got a promotion.
The content of the invention
In view of the drawbacks described above of prior art, the technical problems to be solved by the invention are how to be achieved at low cost entirely
Color micro- light-emitting diode display, simplifies technique, reduces cost, and boost device uniformity and yield.
To achieve the above object, colour filter is made in band by the present invention using the scheme for making colour filter on a silicon substrate
There is the silicon substrate of drive circuit and micro- light emitting diode, before colour filter is made, micro- light emitting diode will be formed with first
Surface planarisation, then colour filter is made on planarization layer, transparency carrier is finally fitted in into silicon substrate surface, shape
Into the semiconductor light emitting micro-display of true color.Due to employing identical backend process flow, device for micro- light emitting diode
Part uniformity and yield get a promotion.The semiconductor light emitting micro-display for the true color that the present invention is provided, including at least silicon base,
Micro- light emitting diode, transparent planarization layer, colour filter and the transparency carrier being arranged in array, and：
The silicon base includes drive circuit, and it is brilliant that the drive circuit comprises at least Metal-Oxide Semiconductor field-effect
Body pipe, metal contact wires and through hole；
Micro- light emitting diode comprises at least first electrode, multilayer non-organic compound and second electrode；The multilayer
Non-organic compound is made up of Ga, As, In, Al, Se, Zn, Si, P, N or C element and can adulterated；
The transparent planarization layer is overlying on micro- LED surface, and the colour filter is located on transparent planarization layer, institute
Transparency carrier is stated on colour filter.
The electric current that micro- light emitting diode is provided by the drive circuit is driven, and the first light of transmitting；
The colour filter includes some colour filter points, and the colour filter point covers micro- light emitting diode in vertical direction,
And the first light that micro- light emitting diode is launched is changed into the second light.
Further, the centre distance between micro- light emitting diode is not more than 20 μm and single micro- light emitting diode
Electric current is not higher than 30 μ A.
Further, the transparent planarization layer is transparent organic matter or inorganic substances, and thickness is no more than 10 μm.
Further, the colour filter point is completely covered in micro- light emitting diode, the colour filter point in vertical direction
Micro- light emitting diode center point position is not more than 1 μm described in heart point positional distance.
Further, first light be white light or blue light, and,
When the first light is white light, the white light blue light that blue light material is sent in micro- light emitting diode and institute
State the recovery synthesis that the blue light excitated fluorescent powder that blue light material sends is sent, or the monochrome sent by least two monochromatic luminescent materials
Recovery synthesis, the second light that white light is filtered into by the colour filter point is feux rouges, green glow or blue light.
When the first light is blue light, the second light that the colour filter point is converted blue light into is feux rouges, green glow or blue light.
Further, the distributing order of the colour filter point is that RGB, RGB be green or red, green, blue and white.
Further, the colour resist that the colour filter point is manufactured using organic photosensitive material, the colour filter thickness
Degree is no more than 3 μm.
Further, 50 μm of glue, glue coverage are no more than between the transparency carrier and colour filter for thickness
For the whole or surrounding of transparency carrier.
Further, the transparency carrier be can on the unorganic glass that thickness is 0.4~1.2mm, and the transparency carrier
Selectively covered with anti-reflective optical coating.
Further, the micro- light emitting diode of the non-organic is horizontal structure or vertical stratification.
Further, micro- light emitting pixel has at least one public electrode.
Present invention also offers a kind of manufacturing process of the semiconductor light emitting micro-display of true color, procedure below is included：
Drive circuit is made on a silicon substrate, and it is brilliant that the drive circuit comprises at least Metal-Oxide Semiconductor field-effect
Body pipe, metal contact wires and through hole, the making include film making process, figure transfer process and/or doping process；
In the silicon base for be formed with drive circuit by evaporation, sputtering, stripping, etching, CVD, bonding, batch transfer and/
Or printing technology makes micro- light emitting pixel, micro- light emitting diode comprise at least first electrode, multilayer non-organic compound and
Second electrode, the multilayer non-organic compound is made up of Ga, As, In, Al, Se, Zn, Si, P, N or C element and can adulterated, institute
The electric current that micro- light emitting diode provides by the drive circuit is stated to be driven, and the first light of transmitting；
Transparent planarization layer is made in the silicon substrate surface for being formed with micro- light emitting diode, in transparent planarization layer
Upper making colour filter, transparency carrier is conformed in the silicon base with colour filter, and it is the complete of transparency carrier to fit over scope
Portion or surrounding.
The colour filter includes some colour filter points, and the colour filter point covers micro- light emitting diode in vertical direction,
And the first light that micro- light emitting diode is launched is changed into the second light；
Further, first light be white light or blue light, and,
When the first light is white light, the manufacturing process contains the manufacturing process of blue light material and the making of fluorescent material
Process, or contain the manufacturing process of at least two monochromatic luminescent materials.
When the first light is blue light, the manufacturing process contains the manufacturing process of blue light material.
Further, the transparent planar layer manufacturing method thereof includes evaporation, sputtering, spin coating, etching, CVD, CMP.
Further, the colour filter layer manufacturing method thereof includes evaporation, sputtering, photoetching, development, etching, baking, dyeing, electricity
Deposition, printing, printing, ink-jet, pigment are scattered, laser transfer.
Further, the silicon base is silicon wafer, and the manufacturing process also includes wafer being cut into single-chip
Process.
Further, the laminating contains transparency carrier and the mistake being formed with the silicon base of colour filter is fitted in by glue
Journey, glue coverage is the whole or surrounding of transparency carrier.
Compared with prior art, the structure of the semiconductor light emitting micro-display for the true color that the present invention is provided and making work
Skill, the structure and technique of especially a kind of planarization layer and colour filter, is simplified device fabrication processes, processing compatibility
Get a promotion, and device uniformity and yield are improved.Second, it is micro- aobvious the invention provides the semiconductor light emitting of true color
Show the pixel arrangement method of device, make pixel arrangement more efficient.3rd, it is micro- aobvious the invention provides the semiconductor light emitting of true color
Show the different components structure of micro- light emitting diode in device, be allowed to processing compatibility higher.4th, the present invention also provides public electrode
Difference draw the method for connecing, different colours component can be adjusted respectively, the synthesis of white light is more facilitated.
The technique effect of the design of the present invention, concrete structure and generation is described further below with reference to accompanying drawing, with
It is fully understood from the purpose of the present invention, feature and effect.
Brief description of the drawings
Fig. 1 is the semiconductor light emitting micro-display part sectional side view of the true color of the preferred embodiment of the present invention；
Fig. 2 is the pel spacing schematic diagram of the preferred embodiment of the present invention；
Fig. 3 (a) is the first light and the second light transition diagram of the preferred embodiment of the present invention；
Fig. 3 (b) is to include the schematic diagram of optical confinement layer between different micro- light emitting diodes in Fig. 3 (a)；
Fig. 4 (a) is the colour filter point arrangement pattern of the preferred embodiment of the present invention；
Fig. 4 (b) is the colour filter point arrangement pattern of another preferred embodiment of the invention；
Fig. 4 (c) is the colour filter point arrangement pattern of another preferred embodiment of the invention；
Fig. 4 (d) is the colour filter point arrangement pattern of another preferred embodiment of the invention；
Fig. 4 (e) is the colour filter point arrangement pattern of another preferred embodiment of the invention；
Fig. 4 (f) is the colour filter point arrangement pattern of another preferred embodiment of the invention；
Fig. 4 (g) is the colour filter point arrangement pattern of another preferred embodiment of the invention；
Fig. 4 (h) is the colour filter point arrangement pattern of another preferred embodiment of the invention；
Fig. 4 (i) is the colour filter point arrangement pattern of another preferred embodiment of the invention；
Fig. 5 is the sectional side view of the colour filter point of the preferred embodiment of the present invention；
Fig. 6 (a) is the sectional side view of the glue laminating of the preferred embodiment of the present invention；
Fig. 6 (b) is the sectional side view of the glue laminating of another preferred embodiment of the invention；
Fig. 7 is the sectional side view of the transparency carrier of the preferred embodiment of the present invention；
Fig. 8 (a) is the sectional side view of micro- light emitting diode of the horizontal structure of the preferred embodiment of the present invention；
Fig. 8 (b) is the sectional side view of micro- light emitting diode of the vertical stratification of the preferred embodiment of the present invention；
Fig. 9 is the manufacturing process of the semiconductor light emitting micro-display of the true color of the preferred embodiment of the present invention；
Figure 10 (a) is the manufacture work of the semiconductor light emitting micro-display of the true color of the preferred embodiment of the present invention
Skill；
Figure 10 (b) is the manufacture work of the semiconductor light emitting micro-display of the true color of another preferred embodiment of the invention
Skill；
Figure 10 (c) is the manufacture work of the semiconductor light emitting micro-display of the true color of another preferred embodiment of the invention
Skill.
Embodiment
Multiple preferred embodiments of the present invention are introduced below with reference to Figure of description, make its technology contents more clear and just
In understanding.The present invention can be emerged from by many various forms of embodiments, and protection scope of the present invention is not only limited
The embodiment that Yu Wenzhong is mentioned.
In the accompanying drawings, structure identical part is represented with same numbers label, everywhere the similar component of structure or function with
Like numeral label is represented.The size and thickness of each component shown in the drawings arbitrarily show that the present invention is not limited
The size and thickness of each component.In order that diagram is apparent, the appropriate thickness for exaggerating part in the place of some in accompanying drawing.
Embodiment one：
Referring to Fig. 1, the semiconductor light emitting micro-display of the true color is characterised by, including at least silicon base 10, in battle array
Micro- light emitting diode 21, transparent planarization layer 20, colour filter 30 and the transparency carrier 40 of arrangement are arranged, and：
Silicon base includes drive circuit 11, and drive circuit 11 comprises at least Metal-Oxide Semiconductor field-effect transistor
12nd, metal contact wires 13 and through hole 14, more specifically drive circuit 11 also include interface 15, and the interface 15 is used to be drawn by outside
Enter signal and power supply；
Micro- light emitting diode 21 comprise at least first electrode 22, multilayer non-organic compound 23 and second electrode 24 (referring to
Fig. 8 (a)-(b)), non-organic compound 23 is made up of Ga, As, In, Al, Se, Zn, Si, P, N or C element and can adulterated；Enter one
Step ground, the non-organic compound is preferably GaAs, GaAsP, AlGaAs, AlGaInP, GaInN, AlGaP, AlGaN, GaP:
ZnO、InGaN、GaN、GaP、ZnSe、Al2O3, it is one kind of multiple in ZnO, SiC, AnN, doping be preferably Si, Mg, Zn, As, In,
C ion dopings；Further, micro- light emitting diode 21 also includes quantum dot LED.
The transparent planarization layer 20 is overlying on micro- LED surface, and the colour filter 30 is located at transparent planarization layer 20
On, the transparency carrier 40 is located on colour filter 30.
The electric current that micro- light emitting diode 21 is provided by drive circuit 11 is driven, and the first light 41 of transmitting；
Colour filter 30 includes some colour filter points 31, and colour filter point 31 covers micro- light emitting diode 21 in vertical direction, and will
The first light 41 that micro- light emitting diode 21 is launched is changed into the second light 42.
Further, the number of micro- light emitting diode 21 is no less than 320 × 240, and the present embodiment is preferably 800 × 600
More than × 3, it is more than 1920 × 1080 × 3 further to select excellent.
Embodiment two：
Referring to Fig. 2, the present embodiment is essentially identical with first embodiment, further, between micro- light emitting diode 21 in
Heart distance 80 is not more than 20 μm, and preferably 5~10 μm of the present embodiment, the electric current of single micro- light emitting diode 21 is not higher than 30 μ A, this
Embodiment preferably 1~5 μ A, so that the Pixel Dimensions for specifying the semiconductor light emitting micro-display of true color of the present invention are big
Small and pixel current scope, this is significantly less than routine using glass as the display of substrate, is very suitable for the present embodiment miniature
Display.
Embodiment three：
The present embodiment is essentially identical with first embodiment, further, and the transparent planarization layer 20 is non-conductive organic
Material or inorganic substances, include SiOx、SiNx, photoresist, other organic substances, thickness be no more than 10 μm；Further, it is described
Transparent planarization layer 20 is no more than 3 μm, preferably 1 μm in the thickness of 20 part 25 of micro- top layer of light emitting diode 21.
Example IV：
The present embodiment is essentially identical with first embodiment, further, and institute is completely covered in colour filter point 31 in vertical direction
State micro- light emitting diode 21 and the center position of colour filter point 31 is not more than 1 μm apart from micro- center position of light emitting diode 21, this
Embodiment is preferably 0.5 μm, so as in the range of optional process deviation, reduce pel spacing, increases pixel aperture ratio.
Embodiment five：
It is in the present embodiment, essentially identical with first embodiment referring to Fig. 3 (a), further, first light 41
For white light 41a, further, two kinds of white light production method embodiments are listed below：
In one embodiment, the white light 41a is sent by the blue light material in micro- light emitting diode 21 blue light and institute
The recovery synthesis that the blue light excitated fluorescent powder that blue light material sends is sent is stated, the fluorescent material is preferably that blue light can be switched into Huang
The fluorescent material of green glow, the blue light excitated fluorescent powder that the blue light and the blue light material that blue light material is sent are sent sends yellowish green recovery
Synthesize white light 41a.Further, the fluorescent material 34 is located at the top of micro- light emitting diode 21.Further, it is different micro- luminous
Include optical confinement layer 35 (referring to Fig. 3 (b)) between diode 21, the optical confinement layer passes through light, so as to isolate adjacent
The light that micro- light emitting diode 21 is launched, reduces crosstalk.
In another embodiment, the white light 41a at least two monochromatic luminescent material transmittings in micro- light emitting diode 21
The monochromatic light gone out is combined into, green glow and the blue light material hair that feux rouges that preferably red light material is launched, green light material are launched
The blue light of injection is combined into white light 41a.
For both the above example, the preferred scheme of colour filter point 31 is comprising absorbing in one direction in addition to feux rouges
Other light are converted to the material of feux rouges, the material for absorbing light in addition to green glow in one direction or will by the material of light
Other light are converted to the material of green glow or the material for absorbing light in addition to blue light in one direction or turn other light
The material of blue light is changed to, thus obtained second light 42 is feux rouges 42a, green glow 42b or blue light 42c.
In another embodiment, essentially identical with first embodiment, further, first light 41 is blue light,
The colour filter point 31 is color conversion layer, and the color conversion layer, which has from blue light, to be transformed into red light, is changed from blue light
The characteristics of blue light (nonessential) is transformed into green light, from blue light, thus obtained second light 42 is feux rouges 42a, green
Light 42b or blue light 42c.
Further, the spectral region 380~780nm, the feux rouges 42a of the white light spectral region 610~
750nm, the green glow 42b spectral region are 480~570nm, and the spectral region of the blue light 42c is 430~470nm.
Embodiment six：
The present embodiment and first embodiment and the 5th embodiment are essentially identical, further, the arrangement mode of colour filter point 31
For RGB (RGB), RGBG (RGB is green) or RGBW (red, green, blue and white), wherein, R represents to produce colour filter point, the G tables of red light
Show that the colour filter point, the B that produce green light represent that the colour filter point, the W that produce blue light are represented to produce the colour filter point of white light or do not filtered
Color dot.Specifically, shown in arrangement mode such as Fig. 4 (a)-(h) of the specifiable colour filter point 31 of the present embodiment.It is preferred real at one
In example, Fig. 4 (a) illustrates RGB horizontal bar arrangement modes, and colour filter point horizontal width and vertical height ratio are 1:2~1:4, it is excellent
Elect 1 as:3, tri- colour filter points one full color pixels of formation of adjacent R/G/B in horizontal direction, R/G/B colour filters point position can be mutual
Change.In another preferred embodiment, Fig. 4 (b) illustrates RGB vertical bar arrangement modes, colour filter point horizontal width and vertical height ratio
Example is 2:1~4:1, preferably 3:1, vertically adjacent tri- colour filter point one full color pixels of formation of R/G/B, R/G/B filters
Color dot position can be exchanged.In another preferred embodiment, Fig. 4 (c) illustrates RGBG horizontal bar arrangement modes, in a row, R filters
The ratio between horizontal width and G colour filters point horizontal width of color dot are 1.5:1~3:1, preferably 2:1, vertical height is equal, another
In adjacent lines, the ratio between horizontal width and G colour filters point horizontal width of B colour filters point are 1.5:1~3:1, preferably 2:1, it is vertical high
Degree is equal, tetra- colour filter point one full color pixels of formation of adjacent R/G/B/G, and R/B colour filters point position can be exchanged.Another preferred
In example, Fig. 4 (d) illustrates RGBG vertical bar arrangement modes, in a column, and the vertical height and G colour filters point of R colour filters point are vertical
The ratio between height is 1.5:1~3:1, preferably 2:1, horizontal width is equal, in another adjacent column, the vertical height of B colour filters point
It is 1.5 with the ratio between G colour filters point vertical height:1~3:1, preferably 2:1, horizontal width is equal, adjacent R/G/B/G colour filters point shape
Into a full color pixel, R/B colour filters point position can be exchanged.In another preferred embodiment, Fig. 4 (e) illustrates RGBW arrangement sides
Formula, R colour filters point, B colour filters point, G colour filters point and W colour filters point are arranged in arrays, and any two of which colour filter point area ratio is 0.8
~1.2, preferably 1, adjacent R/G/B/W colour filters point one full color pixel of formation, R/G/B/W colour filters point position can be exchanged.
In another preferred embodiment, Fig. 4 (f) illustrates another RGBW arrangement modes, R colour filters point, B colour filters point, G colour filters point and W colour filters
Point is in horizontal bar arrangement (can also be presented vertical bar arrangement), and colour filter point horizontal width and vertical height ratio are 1:3~1:5 (or
3:1~5:1), preferably 1:4 (or 4:1), tetra- colour filter point formation one of adjacent R/G/B/W are complete on level (or vertical) direction
Polychrome element, R/G/B/W colour filters point position can be exchanged.In another preferred embodiment, Fig. 4 (g) illustrates another RGBG arrangements
The ratio between horizontal width of mode, R colour filters point and G colour filters point is 1.5:1~3:1, preferably 2:1, vertical height is equal, often goes suitable
Sequence is RGBG ... RGBG, the equivalent pixel of adjacent R G colour filter points, adjacent BG colour filters point also an equivalent pixel, R/B positions
It can exchange.Fig. 4 (h) illustrates another RGBG arrangement modes, and the ratio between R colour filters point and vertical height of G colour filters point are 1.5:1
~3:1, preferably 2:1, horizontal width is equal, and each column is sequentially RGBG ... RGBG, the equivalent pixel of adjacent R G colour filter points,
An adjacent BG colour filters point also equivalent pixel, R/B positions can be exchanged.Fig. 4 (i) illustrates another RGB arrangement modes, R filters
Any two colour filter point area ratio is 0.8~1.2, preferably 1 in color dot, G colour filters point and B colour filters point, and each pixel is by one
Capable R colour filters point (or G colour filters point or B colour filters point) and G/B colour filters point (or R/B colour filters point or R/G colour filters point) structure of another row
All differing the horizontal width of 1/2 pixel into, adjacent rows colour filter point, (or adjacent two row colour filter point all differs 1/2 pixel
Vertical height), R/G/B positions can be exchanged.
Embodiment seven：
Reference picture 5, the present embodiment is essentially identical with first embodiment, further, and the colour filter point 31 is using having
Machine light-sensitive material manufacture colour resist, the colour resist can allow particular range of wavelengths light by and obstruct other
The light of ripple scope length, the thickness of colour filter 30 is no more than 3 μm, preferably 1 μm.Further, the surface of colour filter 31 can be covered
Lid protective clear layer 32, the protective clear layer is SiNx、SiOx, photoresist or other organic materials, thickness do not surpass preferably
Cross 1 μm.
Embodiment eight：
The present embodiment is essentially identical with first embodiment, further, is thickness between transparency carrier 40 and colour filter 30
Glue 50 no more than 50 μm.
In an example, referring to Fig. 6 (a), the coverage of glue 50 is the whole of transparency carrier 40, glue edge away from
It is not more than 1mm from transparency carrier Edge Distance 81.
In another example, referring to Fig. 6 (b), the coverage of glue 50 is the surrounding of transparency carrier 40, glue edge
Distance transparent substrate edges distance 82 is not more than 1mm, and glue width is not more than 3mm, preferably 0.5mm.
Especially, glue 50 is solid-state glue, liquid glue, light-sensitive emulsion, OCA optical cements.
Embodiment nine：
Referring to Fig. 7, the present embodiment is essentially identical with first embodiment, further, transparency carrier 40 be thickness be 0.4~
Covered with anti-reflective optical coating on 1.2mm unorganic glass, transparency carrier 40.
Embodiment ten：
Referring to Fig. 8 (a), the present embodiment is essentially identical with first embodiment, further, and micro- light emitting diode 21 is level
Structure, first electrode 63 and second electrode 62 are connected to drive circuit 11 in luminescent layer homonymy, first electrode 63 by through hole 64,
Second electrode 62 is connected to drive circuit 11 by through hole 65, and the first electrode 63 is conducting metal with second electrode 62.Enter
One step, multilayer non-organic compound layer 61 is preferably at least the n-type doping layer comprising (or from top to bottom) from bottom to top (for example
N-GaN), mqw layer (multiple quantum trap), p-type doped layer (such as p-GaN), or comprising more layers to optimize performance.Further
The lateral cross-sectional area of ground, through hole 64 and through hole 65 is 0.04 to 4 μm2, preferably 1 μm2.Further, first electrode 63 and second
One of them is connected to the source electrode of transistor or drain electrode in drive circuit 11 to electrode 62, and another is connected to the public affairs of drive circuit 11
Common electrode, the public electrode is led to outside drive circuit 11 by lead.
It is essentially identical with embodiment one in another preference referring to Fig. 8 (b), further, micro- light emitting diode
21 be vertical stratification, and first electrode 63 and second electrode 62 are in luminescent layer both sides, and first electrode 63 is located at multilayer non-organic chemical combination
The lower floor of thing 61 and drive circuit 11 is connected to by through hole 64, second electrode 62 is located at the top of multilayer non-organic compound layer 61
Portion, the first electrode 63 is conducting metal with second electrode 62.Further, multilayer non-organic compound layer 61 is preferably extremely
Few n-type doping layer (such as n-GaN) comprising (or from top to bottom) from bottom to top, mqw layer (multiple quantum trap), p-type doped layer
(such as p-GaN), or comprising more layers to optimize performance.Further, the lateral cross-sectional area of through hole 64 is 0.04 to 4 μm2,
Preferably 1 μm2.Further, one of them in first electrode 63 and second electrode 62 is connected to transistor in drive circuit 11
Source electrode or drain electrode, another is connected to the public electrode of drive circuit 11, and the public electrode leads to driving electricity by lead
Outside road 11.
Embodiment 11：
The present embodiment and embodiment one and embodiment ten are essentially identical, further, and micro- light emitting diode 11 has at least
One public electrode.
In an example, micro- light emitting diode 11 has a public electrode, 11 one end of all micro- light emitting diodes
The public electrode is connected to, the public electrode is first electrode 63 or second electrode 62, and is micro- light emitting diode 11
Male or female.
In another example, micro- light emitting diode 11 has three public electrodes (the first public electrode, the second common electricals
Pole and the 3rd public electrode), all second light be converted into red light micro- light emitting diode be connected to the first public electrode,
Micro- light emitting diode that all second light are converted into green light is connected to the second public electrode, all second light and is converted
The 3rd public electrode is connected to for micro- light emitting diode of blue light, three described public electrodes are first electrode 63 or the
Two electrodes 62, and be the male or female of micro- light emitting diode 11.
In another example, micro- light emitting diode 11 has four public electrodes (the first public electrode, the second common electricals
Pole, the 3rd public electrode and the 4th public electrode), micro- light emitting diode that all second light are converted into red light is connected to
Micro- light emitting diode that first public electrode, all second light are converted into green light is connected to the second public electrode, owned
Second light be converted into blue light micro- light emitting diode be connected to the 3rd public electrode, all second light be converted into it is white
Micro- light emitting diode of coloured light is connected to the 4th public electrode, and four described public electrodes are the electricity of first electrode 63 or second
Pole 62, and be the male or female of micro- light emitting diode 11.
Embodiment 12：
Referring to Fig. 9, this example lists a kind of manufacturing process of the semiconductor light emitting micro-display of true color, comprising following
Process：
Drive circuit (step 91) is made on a silicon substrate, and the drive circuit comprises at least Metal-Oxide Semiconductor
Field-effect transistor, metal contact wires and through hole, the making include film making process, figure transfer process and/or doping
Technique；Further, the silicon base be comprising the metal-oxide using silicon as substrate that characteristic size is less than 0.6 micron-
The silicon wafer of field-effect transistor large scale integrated circuit, the film making process includes but is not limited to oxidation technology, thin
Film depositing operation, the figure transfer process, which include but is not limited to photoetching process, etching technics, the doping process, to be included but not
Be limited to diffusion technique, ion implantation technology, a diameter of 2 inches of the silicon wafer, 3 inches, 4 inches, 6 inches, 8 inches,
12 inches.
Shifted being formed with the silicon base of the drive circuit by evaporation, sputtering, etching, CVD, stripping, bonding, batch
And/or printing technology makes micro- light emitting pixel (step 92).Micro- light emitting diode comprises at least first electrode, multilayer is non-has
Machine compound and second electrode, the multilayer non-organic compound are made up of Ga, As, In, Al, Se, Zn, Si, P, N or C element
And can adulterate, the electric current that micro- light emitting diode is provided by the drive circuit is driven, and the first light of transmitting.It is described non-
Organic compound is preferably GaAs, GaAsP, AlGaAs, AlGaInP, GaInN, AlGaP, AlGaN, GaP:ZnO、InGaN、
GaN、GaP、ZnSe、Al2O3, it is one kind of multiple in ZnO, SiC, AnN, doping is preferably Si, Mg, Zn, As, In, C ion doping；
Further, micro- light emitting diode 21 also includes quantum dot LED；Further, in step 92, the etching includes wet method
Or ICP, the CVD include LPCVD, PECVD, MOCVD；Further, in step 92, (it is usually indigo plant first in LED-baseplate
Jewel substrate) on make LED epitaxial growth film layer, form micro- light emitting diode with ICP techniques, then will carry LED epitaxial growth film
The LED-baseplate of layer is bonded in the silicon base；In another example, LED-baseplate is peeled off using physically or chemically mechanism, with
One temporary substrate carries LED epitaxial growth film layer, recycles ICP techniques to form micro- light emitting diode, or first with ICP technique shapes
Into micro- light emitting diode, then reuse physically or chemically mechanism and peel off LED-baseplate, it is thin with temporary substrate carrying LED epitaxial growth
Film layer；Finally, then the LED-baseplate with LED epitaxial growth film layer will be bonded in the silicon base.
Transparent planarization layer (step 93) is made in the silicon substrate surface for being formed with micro- light emitting diode；Further, it is transparent
Planarization layer is transparent organic matter or inorganic substances, and thickness is no more than 10 μm, and transparent planarization layer 20 is in micro- light emitting diode
The segment thickness of top layer is no more than 3 μm, and preferred value is 1 μm.
Colour filter (step 94) is made on transparent planarization layer.The colour filter includes some colour filter points, the colour filter
Point covers micro- light emitting diode in vertical direction, and the first light that micro- light emitting diode is launched is changed into the second light
Line；Further, colour filter point is smaller than 20 μm.Yet further, colour filter point is completely covered described micro- in vertical direction
Light emitting diode, the micro- light emitting diode center point position of colour filter dot center point positional distance is not more than 1 μm, and the present embodiment is preferably
0.5μm。
Transparency carrier is conformed in the silicon base with colour filter (step 95), further, the transparency carrier is excellent
Elect the unorganic glass that thickness is 0.4~1.2mm as；Further, covered with anti-reflective optical coating on the transparency carrier.
Embodiment 13：
The present embodiment is identical with embodiment dodecyl sheet, further, and first light is white light, micro- luminous picture
Plain manufacturing process (step 92) contains the manufacturing process of blue light material and the manufacturing process of fluorescent material, and the fluorescent material is preferably
Blue light can be switched to the fluorescent material of green-yellow light.
In another embodiment, identical with embodiment dodecyl sheet, further, first light is white light, micro-
Light emitting pixel manufacturing process (step 92) contains the system of the manufacturing process, preferably red light material of at least two monochromatic luminescent materials
Make the manufacturing process of process, the manufacturing process of green light material and blue light material.
For both the above example, the preferred scheme of the colour filter point is comprising absorbing in one direction in addition to feux rouges
Light material or by other light be converted to the material of feux rouges, the material for absorbing light in addition to green glow in one direction,
Or the material of the light in addition to blue light is absorbed in one direction, thus obtained second light is feux rouges, green glow or blue light.
In another embodiment, identical with embodiment dodecyl sheet, further, first light is blue light, micro-
Light emitting pixel manufacturing process (step 92) contains the manufacturing process of blue light material.The manufacturing process of the colour filter contains coloured silk
The manufacturing process of color transition material, the color conversion layer is green with being transformed into red light from blue light, being transformed into from blue light
Coloured light, the characteristics of be transformed into blue light (nonessential) from blue light, thus obtained second light is feux rouges, green glow or blue light.
380~780nm of spectral region of the white light, 610~750nm of spectral region of the feux rouges, the green glow
Spectral region is 480~570nm, and the spectral region of the blue light is 430~470nm.
Embodiment 14：
The present embodiment is identical with embodiment 12 or embodiment tritriacontyl sheet, further, the transparent planarization layer system
Making method (step 93) includes evaporation, sputtering, spin coating, etching, CVD, CMP, and the transparent planarization layer is organic material or nothing
Machine material.
Embodiment 15：
The present embodiment is identical with embodiment 12 or embodiment tritriacontyl sheet, further, the colour filter manufacturing process
(step 94) includes evaporation, sputtering, photoetching, development, etching, baking, dyeing, electro-deposition, printing, printing, ink-jet or pigment point
Scattered, laser transfer；Further, it is described transparency protected in protective clear layer of the surface cladding thickness no more than 3 μm of colour filter
Layer is SiNx、SiOx, photoresist or other organic materials；Further, make temperature and be not higher than 230 degree.
Embodiment 16：
The present embodiment is identical with embodiment 12 or embodiment tritriacontyl sheet, further, and the silicon base is Silicon Wafer
Piece, the manufacturing process also includes the process that wafer is cut into single-chip, and the process for being cut into single-chip is transparent
Carried out before colour filter (step 94) is made on planarization layer or after making, it is described to be cut into machine cuts or laser cutting；
The process (step 95) of the laminating is carried out before being cut or after cutting, specifically：
In one embodiment, referring to Figure 10 (a), drive circuit (step 91), Ran Hou are made on a silicon substrate first
It is formed with the silicon base of drive circuit and makes micro- light emitting diode (step 92), is then being formed with the silicon base of micro- light emitting diode
Surface makes transparent planarization layer (step 93), then makes colour filter (step 94) on transparent planarization layer, then will be saturating
In bright baseplate-laminating to the silicon base with colour filter (step 95), the silicon base for posting transparency carrier is finally cut into single
Piece (step 96), forms the semiconductor light emitting micro-display of true color.
In another embodiment, referring to Figure 10 (b), drive circuit (step 91) is made on a silicon substrate first, then
Micro- light emitting diode (step 92) is made in the silicon base for be formed with drive circuit, then the silicon substrate of micro- light emitting diode is being formed with
Basal surface makes transparent planarization layer (step 93), then makes colour filter (step 94) on transparent planarization layer, then will
It is formed with transparent planarization layer and colour filter silicon base is cut into single-chip (step 97)；Meanwhile, transparency carrier is cut into single
Piece (step 98), finally conforms to the single-chip of transparency carrier on silicon base single-chip (step 99), forms the half of true color
Conductor lights micro-display.
In yet another embodiment, referring to Figure 10 (c), drive circuit (step 91) is made on a silicon substrate first, then
Micro- light emitting diode (step 92) is made in the silicon base for be formed with drive circuit, then the silicon substrate of micro- light emitting diode is being formed with
Basal surface makes transparent planarization layer (step 93), then makes colour filter (step 94) on transparent planarization layer；Meanwhile, will
Transparency carrier is cut into single-chip (step 98)；Then, the single-chip of transparency carrier is conformed into silicon base (step 100),
The silicon base for posting transparency carrier is finally cut into single-chip (step 101), the semiconductor light emitting micro display of true color is formed
Device.
In three above example, the area of transparency carrier single-chip is less than the silicon substrate for being formed with transparent planarization layer and colour filter
Bill kept on file chip, and expose lead district.
Embodiment 17：
The present embodiment is identical with embodiment palmityl sheet, further, and the attaching process contains transparency carrier and passed through
The process that glue is fitted in silicon base, the glue is solid-state glue, liquid glue, light-sensitive emulsion, OCA optical cements.
In an example, the coverage of the glue is the whole of transparency carrier, and the attaching process is full laminating
Technique, glue Edge Distance transparency carrier Edge Distance is not more than 1mm, and preferred value is 0.1mm.
In another example, the coverage of the glue is the surrounding of transparency carrier, and the attaching process is frame glue
Attaching process, glue Edge Distance transparency carrier Edge Distance is not more than 1mm, and preferred value is 0.1mm, and glue width is not more than
3mm, preferably 0.5mm.
Preferred embodiment of the invention described in detail above.It should be appreciated that the ordinary skill of this area is without wound
The property made work just can make many modifications and variations according to the design of the present invention.Therefore, all technical staff in the art
Pass through the available technology of logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Scheme, all should be in the protection domain being defined in the patent claims.
Claims (17)
1. a kind of semiconductor light emitting micro-display of true color, it is characterised in that including at least silicon base, be arranged in array it is micro-
Light emitting diode, transparent planarization layer, colour filter and transparency carrier, and：
The silicon base include drive circuit, the drive circuit comprise at least Metal-Oxide Semiconductor field-effect transistor,
Metal contact wires and through hole；
Micro- light emitting diode comprises at least first electrode, multilayer non-organic compound and second electrode；The multilayer is non-to be had
Machine compound is made up of Ga, As, In, Al, Se, Zn, Si, P, N or C element and can adulterated；
The transparent planarization layer is overlying on micro- LED surface, and the colour filter is located on transparent planarization layer, described
Bright substrate is located on colour filter；
The electric current that micro- light emitting diode is provided by the drive circuit is driven, and the first light of transmitting；
The colour filter includes some colour filter points, and the colour filter point covers micro- light emitting diode in vertical direction, and will
First light of micro- light emitting diode transmitting is changed into the second light.
2. the semiconductor light emitting micro-display of true color as claimed in claim 1, it is characterised in that micro- light emitting diode
Between centre distance be not more than 20 μm and the electric current of single micro- light emitting diode is not higher than 30 μ A.
3. the semiconductor light emitting micro-display of true color as claimed in claim 1, it is characterised in that the transparent planarization layer
For transparent organic matter or transparent inorganic material, thickness is no more than 10 μm.
4. the semiconductor light emitting micro-display of true color as claimed in claim 1, it is characterised in that the colour filter point is vertical
Micro- light emitting diode, micro- light emitting diode center point described in the colour filter dot center point positional distance are completely covered on direction
Position is not more than 1 μm.
5. the semiconductor light emitting micro-display of true color as claimed in claim 1, it is characterised in that first light is white
Light or blue light, and：
When the first light is white light, the white light blue light that blue light material is sent in micro- light emitting diode and the indigo plant
The recovery synthesis that the blue light excitated fluorescent powder that luminescent material is sent is sent, or the monochromatic recovery sent by least two monochromatic luminescent materials
Synthesis, the second light that white light is filtered into by the colour filter point is feux rouges, green glow or blue light；
When the first light is blue light, the second light that the colour filter point is converted blue light into is feux rouges, green glow or blue light.
6. the semiconductor light emitting micro-display of the true color as described in claim 1 or 5, it is characterised in that the colour filter point
Distributing order is RGB, RGB is green or red, green, blue and white.
7. the semiconductor light emitting micro-display of true color as claimed in claim 1, it is characterised in that the colour filter point includes profit
The colour resist manufactured with organic photosensitive material, the colour filter thickness is no more than 3 μm.
8. the semiconductor light emitting micro-display of true color as claimed in claim 1, it is characterised in that the transparency carrier and filter
Glue between chromatograph for thickness no more than 50 μm, glue coverage is the whole or surrounding of transparency carrier.
9. the semiconductor light emitting micro-display of true color as claimed in claim 1, it is characterised in that the transparency carrier is thickness
Spend and anti-reflective optical coating is optionally covered with the unorganic glass for 0.4~1.2mm, and the transparency carrier.
10. the semiconductor light emitting micro-display of true color as claimed in claim 1, it is characterised in that the micro- hair of the non-organic
Optical diode is horizontal structure or vertical stratification.
11. the semiconductor light emitting micro-display of the true color as described in claim 1 or 10, it is characterised in that described micro- luminous
Pixel has at least one public electrode.
12. the manufacturing process of the semiconductor light emitting micro-display of a kind of true color, it is characterised in that include procedure below：
Make drive circuit on a silicon substrate, the drive circuit comprise at least Metal-Oxide Semiconductor field-effect transistor,
Metal contact wires and through hole, the making include film making process, figure transfer process and/or doping process；
Shift and/or beat by evaporation, sputtering, stripping, etching, CVD, bonding, batch in the silicon base for be formed with drive circuit
Print technique and make micro- light emitting pixel, micro- light emitting diode comprises at least first electrode, multilayer non-organic compound and second
Electrode, the multilayer non-organic compound is made up of Ga, As, In, Al, Se, Zn, Si, P, N or C element and can adulterated, described micro-
The electric current that light emitting diode is provided by the drive circuit is driven, and the first light of transmitting；
Transparent planarization layer is made in the silicon substrate surface for being formed with micro- light emitting diode, is made on transparent planarization layer
Make colour filter, transparency carrier conformed in the silicon base with colour filter, fit over scope be transparency carrier whole or
Surrounding；
The colour filter includes some colour filter points, and the colour filter point covers micro- light emitting diode in vertical direction, and will
First light of micro- light emitting diode transmitting is changed into the second light.
13. manufacturing process as claimed in claim 12, it is characterised in that first light is white light or blue light, and,
When the first light is white light, the manufacturing process contains the manufacturing process of blue light material and the making of fluorescent material
Journey, or contain the manufacturing process of at least two monochromatic luminescent materials；
When the first light is blue light, the manufacturing process contains the manufacturing process of blue light material.
14. the manufacturing process as described in claim 12 or 13, it is characterised in that the transparent planar layer manufacturing method thereof includes
Evaporation, sputtering, spin coating, etching, CVD, CMP.
15. the manufacturing process as described in claim 12 or 13, it is characterised in that the colour filter layer manufacturing method thereof include evaporation,
Sputtering, photoetching, development, etching, baking, dyeing, electro-deposition, printing, printing, ink-jet, pigment are scattered, laser transfer.
16. the manufacturing process as described in claim 12 or 13, it is characterised in that the silicon base is silicon wafer, the system
Make the process that technique also includes being cut into wafer into single-chip.
17. manufacturing process as claimed in claim 16, it is characterised in that the laminating contains transparency carrier and pasted by glue
Together in the process being formed with the silicon base of colour filter, glue coverage is the whole or surrounding of transparency carrier.
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| CN109683390A (en) * | 2017-10-18 | 2019-04-26 | 优显科技股份有限公司 | Display device |
| CN112018143A (en) * | 2019-05-28 | 2020-12-01 | 云谷（固安）科技有限公司 | Micro light-emitting diode display substrate, display panel, manufacturing method of display panel and display device |
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| CN112259589A (en) * | 2020-10-22 | 2021-01-22 | Oppo广东移动通信有限公司 | Display screen, electronic device and manufacturing method |
| CN112786764A (en) * | 2021-02-26 | 2021-05-11 | 维沃移动通信有限公司 | Light emitting device, display module, and method of manufacturing light emitting device |
| WO2022179370A1 (en) * | 2021-02-26 | 2022-09-01 | 维沃移动通信有限公司 | Light-emitting device, display assembly and method for manufacturing light-emitting device |
| CN113345927A (en) * | 2021-05-31 | 2021-09-03 | 武汉华星光电技术有限公司 | Method for preparing display panel and transparent display area of camera under screen |
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