CN107221506A - 一种高导热效率石墨复合片的制作方法 - Google Patents

一种高导热效率石墨复合片的制作方法 Download PDF

Info

Publication number
CN107221506A
CN107221506A CN201710546970.5A CN201710546970A CN107221506A CN 107221506 A CN107221506 A CN 107221506A CN 201710546970 A CN201710546970 A CN 201710546970A CN 107221506 A CN107221506 A CN 107221506A
Authority
CN
China
Prior art keywords
graphite
copper foil
composite sheet
heat conduction
graphite flake
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201710546970.5A
Other languages
English (en)
Inventor
邓安进
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Singleton (suzhou) Electronic Technology Co Ltd
Original Assignee
Singleton (suzhou) Electronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Singleton (suzhou) Electronic Technology Co Ltd filed Critical Singleton (suzhou) Electronic Technology Co Ltd
Priority to CN201710546970.5A priority Critical patent/CN107221506A/zh
Publication of CN107221506A publication Critical patent/CN107221506A/zh
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4871Bases, plates or heatsinks
    • H01L21/4882Assembly of heatsink parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3738Semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

本发明公开一种高导热效率石墨复合片的制作方法,所述石墨复合片包括表面与热源相接触的石墨片以及贯穿所述石墨片的多片导热铜箔,所述导热铜箔的厚度与所述石墨片的厚度相同;它包括以下步骤:(a)将石墨卷冲切成石墨片,并冲压形成多个通孔;(b)将铜箔卷冲切成导热铜箔;(c)将所述导热铜箔填入所述通孔中即可。通过在石墨片中贯穿设置石墨片,这样能够提高其在垂直方向上的导热能力,从而提高了导热效率,使得石墨片在垂直方向上的导热率达到150W/(m·k)以上。

Description

一种高导热效率石墨复合片的制作方法
技术领域
本发明涉及一种石墨复合片,具体涉及一种高导热效率石墨复合片的制作方法。
背景技术
近年来,随着电子技术的不断发展,电子类产品不断更新换代,其工作组件的尺寸越来越小,工作的速度和效率越来越高,其发热量也越来越大,因此不仅要求其配备相应的散热装置,还要确保散热装置具有更强的散热能力,以保证产品性能的可靠性和延长其使用寿命。
石墨导热散热材料,因其特有的低密度(相对于金属类)和高导热散热系数及低热阻成为现代电子类产品解决导热散热技术的首选材料。石墨散热片可以沿水平、垂直两个方向导热,但是它在垂直方向的散热效果相对较差而容易形成热点,影响电子产品的散热效果。
发明内容
针对上述存在的技术不足,本发明的目的是提供一种高导热效率石墨复合片的制作方法。
为解决上述技术问题,本发明采用如下技术方案:一种高导热效率石墨复合片的制作方法,所述石墨复合片包括表面与热源相接触的石墨片以及贯穿所述石墨片的多片导热铜箔,所述导热铜箔的厚度与所述石墨片的厚度相同;它包括以下步骤:
(a)将石墨卷冲切成石墨片,并冲压形成多个通孔;
(b)将铜箔卷冲切成导热铜箔;
(c)将所述导热铜箔填入所述通孔中即可。
优化地,它还包括步骤(d)在所述石墨片另一表面粘贴形成粘结层。
优化地,它还包括步骤(d')将步骤(c)得到的产品置于1000~1080℃、真空条件下保温 10~30分钟后降至室温。
进一步地,所述步骤(d')中,其升温速度为30~50℃/h,其降温速度为50~100℃/h。
本发明的有益效果在于:本发明高导热效率石墨复合片的制作方法,通过在石墨片中贯穿设置石墨片,这样能够提高其在垂直方向上的导热能力,从而提高了导热效率,使得石墨片在垂直方向上的导热率达到150W/(m·k)以上。
具体实施方式
下面结合所示的实施例对本发明作以下详细描述:
实施例1
本实施例提供一种高导热效率石墨复合片的制作方法,该石墨复合片包括表面与热源4 相接触的石墨片1、形成在石墨片1另一表面的粘结层3以及一端与粘结层3相接触且另一端延伸至穿过石墨片1的多片导热铜箔2,导热铜箔2的厚度与石墨片1的厚度相同;它包括以下步骤:
(a)将石墨卷冲切成石墨片,并冲压形成多个通孔;
(b)将铜箔卷冲切成导热铜箔;导热铜箔2的厚度为20μm~2mm,直径为1~5mm;
(c)将所述导热铜箔填入所述通孔中即可;
(d)在所述石墨片另一表面粘贴形成粘结层,使得导热铜箔2的端部与粘结层相接触而不会掉落;制得的石墨复合片的垂直导热率达到150W/(m·k),拉伸强度为700(测试标准为ASTM F-152)。
实施例2
本实施例提供一种高导热效率石墨复合片的制作方法,石墨复合片的结构与实施例1中的基本一致,不同的是,它包括以下步骤:
(a)将石墨卷冲切成石墨片,并冲压形成多个通孔;
(b)将铜箔卷冲切成导热铜箔;导热铜箔2的厚度为20μm~2mm,直径为1~5mm;
(c)将所述导热铜箔填入所述通孔中即可;
(d')步骤(c)得到的产品置于真空条件下,以30℃/h的速度升温至1000℃,随后保温10分钟,再以50℃/h的速度降至室温,制得的石墨复合片的垂直导热率达到250W/(m·k),拉伸强度为750(测试标准为ASTM F-152)。
实施例3
本实施例提供一种高导热效率石墨复合片的制作方法,石墨复合片的结构与实施例1中的基本一致,不同的是,它包括以下步骤:
(a)将石墨卷冲切成石墨片,并冲压形成多个通孔;
(b)将铜箔卷冲切成导热铜箔;导热铜箔2的厚度为20μm~2mm,直径为1~5mm;
(c)将所述导热铜箔填入所述通孔中即可;
(d')步骤(c)得到的产品置于真空条件下,以50℃/h的速度升温至1080℃,随后保温 30分钟,再以100℃/h的速度降至室温,制得的石墨复合片的垂直导热率达到450W/(m·k),拉伸强度为850(测试标准为ASTM F-152)。
实施例4
本实施例提供一种高导热效率石墨复合片的制作方法,石墨复合片的结构与实施例1中的基本一致,不同的是,它包括以下步骤:
(a)将石墨卷冲切成石墨片,并冲压形成多个通孔;
(b)将铜箔卷冲切成导热铜箔;导热铜箔2的厚度为20μm~2mm,直径为1~5mm;
(c)将所述导热铜箔填入所述通孔中即可;
(d')步骤(c)得到的产品置于真空条件下,以35℃/h的速度升温至1050℃,随后保温 25分钟,再以80℃/h的速度降至室温,制得的石墨复合片的垂直导热率达到350W/(m·k),拉伸强度为790(测试标准为ASTM F-152)。
上述实施例只为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围。凡根据本发明精神所作的等效变化或修饰,都应涵盖在本发明的保护范围之内。

Claims (4)

1.一种高导热效率石墨复合片的制作方法,所述石墨复合片包括表面与热源相接触的石墨片以及贯穿所述石墨片的多片导热铜箔,所述导热铜箔的厚度与所述石墨片的厚度相同;其特征在于,它包括以下步骤:
(a)将石墨卷冲切成石墨片,并冲压形成多个通孔;
(b)将铜箔卷冲切成导热铜箔;
(c)将所述导热铜箔填入所述通孔中即可。
2.根据权利要求1所述的高导热效率石墨复合片的制作方法,其特征在于:它还包括步骤(d)在所述石墨片另一表面粘贴形成粘结层。
3.根据权利要求1所述的高导热效率石墨复合片的制作方法,其特征在于:它还包括步骤(d')将步骤(c)得到的产品置于1000~1080℃、真空条件下保温10~30分钟后降至室温。
4.根据权利要求3所述的高导热效率石墨复合片的制作方法,其特征在于:所述步骤(d')中,其升温速度为30~50℃/h,其降温速度为50~100℃/h。
CN201710546970.5A 2017-07-06 2017-07-06 一种高导热效率石墨复合片的制作方法 Withdrawn CN107221506A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710546970.5A CN107221506A (zh) 2017-07-06 2017-07-06 一种高导热效率石墨复合片的制作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710546970.5A CN107221506A (zh) 2017-07-06 2017-07-06 一种高导热效率石墨复合片的制作方法

Publications (1)

Publication Number Publication Date
CN107221506A true CN107221506A (zh) 2017-09-29

Family

ID=59952702

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710546970.5A Withdrawn CN107221506A (zh) 2017-07-06 2017-07-06 一种高导热效率石墨复合片的制作方法

Country Status (1)

Country Link
CN (1) CN107221506A (zh)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10656714B2 (en) 2017-03-29 2020-05-19 Apple Inc. Device having integrated interface system
US10705570B2 (en) 2018-08-30 2020-07-07 Apple Inc. Electronic device housing with integrated antenna
US10915151B2 (en) 2017-09-29 2021-02-09 Apple Inc. Multi-part device enclosure
CN112336212A (zh) * 2020-10-30 2021-02-09 广东美的厨房电器制造有限公司 烹饪装置
CN113355058A (zh) * 2021-06-04 2021-09-07 上海交通大学 二维碳素-金属构型化复合材料及其制备方法和应用
US11133572B2 (en) 2018-08-30 2021-09-28 Apple Inc. Electronic device with segmented housing having molded splits
US11175769B2 (en) 2018-08-16 2021-11-16 Apple Inc. Electronic device with glass enclosure
US11189909B2 (en) 2018-08-30 2021-11-30 Apple Inc. Housing and antenna architecture for mobile device
US11258163B2 (en) 2018-08-30 2022-02-22 Apple Inc. Housing and antenna architecture for mobile device
US11678445B2 (en) 2017-01-25 2023-06-13 Apple Inc. Spatial composites
US11812842B2 (en) 2019-04-17 2023-11-14 Apple Inc. Enclosure for a wirelessly locatable tag
US12009576B2 (en) 2020-10-12 2024-06-11 Apple Inc. Handheld electronic device

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11678445B2 (en) 2017-01-25 2023-06-13 Apple Inc. Spatial composites
US10656714B2 (en) 2017-03-29 2020-05-19 Apple Inc. Device having integrated interface system
US11720176B2 (en) 2017-03-29 2023-08-08 Apple Inc. Device having integrated interface system
US10871828B2 (en) 2017-03-29 2020-12-22 Apple Inc Device having integrated interface system
US11099649B2 (en) 2017-03-29 2021-08-24 Apple Inc. Device having integrated interface system
US11366523B2 (en) 2017-03-29 2022-06-21 Apple Inc. Device having integrated interface system
US10915151B2 (en) 2017-09-29 2021-02-09 Apple Inc. Multi-part device enclosure
US11550369B2 (en) 2017-09-29 2023-01-10 Apple Inc. Multi-part device enclosure
US11175769B2 (en) 2018-08-16 2021-11-16 Apple Inc. Electronic device with glass enclosure
US11258163B2 (en) 2018-08-30 2022-02-22 Apple Inc. Housing and antenna architecture for mobile device
US11189909B2 (en) 2018-08-30 2021-11-30 Apple Inc. Housing and antenna architecture for mobile device
US11133572B2 (en) 2018-08-30 2021-09-28 Apple Inc. Electronic device with segmented housing having molded splits
US11379010B2 (en) 2018-08-30 2022-07-05 Apple Inc. Electronic device housing with integrated antenna
US11720149B2 (en) 2018-08-30 2023-08-08 Apple Inc. Electronic device housing with integrated antenna
US10705570B2 (en) 2018-08-30 2020-07-07 Apple Inc. Electronic device housing with integrated antenna
US11955696B2 (en) 2018-08-30 2024-04-09 Apple Inc. Housing and antenna architecture for mobile device
US11812842B2 (en) 2019-04-17 2023-11-14 Apple Inc. Enclosure for a wirelessly locatable tag
US12009576B2 (en) 2020-10-12 2024-06-11 Apple Inc. Handheld electronic device
CN112336212A (zh) * 2020-10-30 2021-02-09 广东美的厨房电器制造有限公司 烹饪装置
CN113355058A (zh) * 2021-06-04 2021-09-07 上海交通大学 二维碳素-金属构型化复合材料及其制备方法和应用

Similar Documents

Publication Publication Date Title
CN107221506A (zh) 一种高导热效率石墨复合片的制作方法
CN106993394A (zh) 一种高导热效率石墨复合片的制作方法
Loeblein et al. High-density 3D-boron nitride and 3D-graphene for high-performance nano–thermal interface material
TWI470010B (zh) A heat-conductive sheet, a method for manufacturing the same, and a heat radiating device using a heat-conducting sheet
CN204340308U (zh) 一种微型石墨铜散热片
CN203504880U (zh) 石墨烯导热电路基板
CN103011141A (zh) 高导热石墨膜的制造方法
KR101808898B1 (ko) 전자기파 차폐시트, 및 이의 제조방법
CN105814683B (zh) 片状结构体、使用了该片状结构体的电子设备、片状结构体的制造方法以及电子设备的制造方法
CN107740006A (zh) 一种性能各向异性的Cu/W复合材料及其制备方法
CN102404976A (zh) 电子装置
Bai et al. High thermal conductivity nanocomposites based on conductive polyaniline nanowire arrays on boron nitride
CN106009445A (zh) 一种导热聚合物纳米复合材料及其制备方法
CN105038631A (zh) 高导热绝缘纳米碳铜箔
CN108219757B (zh) 一种高面内导热绝缘复合膜的制备方法
CN103213973A (zh) 一种柔性高定向石墨导热材料的制备方法
CN108156790A (zh) 散热器
CN201785338U (zh) 一种复合散热石墨材料
CN107396618A (zh) 一种绝缘性好的散热片
CN207305058U (zh) 金属芯电路板
CN202069420U (zh) 一种高导热厨具
CN104708869A (zh) 一种高导热铝基覆铜板及其制造方法
CN204316940U (zh) 一种石墨烯散热膜
CN106808767A (zh) 防潮石墨烯复合散热膜
CN202133325U (zh) 一种集束型膜材料高散热结构

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication

Application publication date: 20170929

WW01 Invention patent application withdrawn after publication