CN107217306B - Chemical composition of polycrystalline silicon wafer acid texturing optimizing agent and application thereof - Google Patents
Chemical composition of polycrystalline silicon wafer acid texturing optimizing agent and application thereof Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 57
- 239000002253 acid Substances 0.000 title claims abstract description 39
- 239000000203 mixture Substances 0.000 title claims abstract description 35
- 239000000126 substance Substances 0.000 title claims abstract description 32
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 20
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 32
- 239000010432 diamond Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000005520 cutting process Methods 0.000 claims abstract description 15
- 239000004570 mortar (masonry) Substances 0.000 claims abstract description 13
- 229920000642 polymer Polymers 0.000 claims abstract description 9
- 239000007864 aqueous solution Substances 0.000 claims abstract description 5
- 229920005862 polyol Polymers 0.000 claims abstract description 5
- 150000003077 polyols Chemical class 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 34
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 239000011259 mixed solution Substances 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 230000002378 acidificating effect Effects 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 150000005846 sugar alcohols Polymers 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 125000002947 alkylene group Chemical group 0.000 claims 3
- 125000005529 alkyleneoxy group Chemical group 0.000 claims 1
- 125000005156 substituted alkylene group Chemical group 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 27
- 229910052710 silicon Inorganic materials 0.000 abstract description 27
- 239000010703 silicon Substances 0.000 abstract description 27
- 238000002310 reflectometry Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 53
- 210000004027 cell Anatomy 0.000 description 16
- 210000002268 wool Anatomy 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical class OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 239000012752 auxiliary agent Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002114 nanocomposite Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000002184 metal Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- RWRNJJPSFQVVST-UHFFFAOYSA-N S1N=NC=C1.C1(=CC=CC=C1)C1=CC=CC=C1 Chemical compound S1N=NC=C1.C1(=CC=CC=C1)C1=CC=CC=C1 RWRNJJPSFQVVST-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a chemical composition of a polycrystalline silicon wafer acid texturing optimizing agent, which is an aqueous solution, and the solute is: (1) a polymer having thiodiazoxide structural units; (2) a polyol or derivative thereof. The invention also provides application of the chemical composition of the polycrystalline silicon wafer acid texturing optimizing agent in the acid texturing of the polycrystalline silicon wafer cut by a mortar line or a diamond line. The chemical composition has the advantages of simple preparation and use method, easy implementation and good repeatability, when the chemical composition is used for preparing the texture of the polycrystalline silicon by using a mortar wire or a diamond wire cutting, the texture preparing effect is obviously improved, the prepared silicon wafer has uniform surface appearance, low reflectivity and uniform appearance color after being coated, and compared with the texture surface without adding the auxiliary chemical composition, the uniformity of the silicon wafer is obviously improved.
Description
Technical Field
The invention belongs to the field of new energy, and particularly relates to a chemical composition of an acid texturing optimizing agent for a surface of a polycrystalline silicon wafer, and application of the chemical composition of the optimizing agent in preparation of an acid texturing solution for texturing a mortar wire or diamond wire cutting polycrystalline silicon wafer.
Background
Reflection of incident light at the surface of the silicon wafer greatly reduces the efficiency (current) of the silicon solar cell. If the silicon cell surface is not subjected to an anti-reflection treatment, about 40% of the sunlight will be lost. This anti-reflection effect must be effective across the entire solar spectrum and at a wide variety of angles of incident light.
Currently, antireflection on crystalline silicon photovoltaic cells is by several different techniques. For single crystal silicon, the reflectivity of the anisotropic (pyramid) textured etched silicon single crystal is reduced to about 5-15% above 100 a single crystal silicon, but mainly at an incident light near 90 ° angle rather than at a low incident angle. This technique also consumes a large amount of silicon material, making it impractical for thin film silicon solar cells. For polysilicon, the acid isotropy corrosion method is adopted to obtain small pit-shaped suede, so that the surface reflectivity is reduced to 15-20%. With the development of the silicon wafer cutting technology, the diamond wire cutting silicon wafer technology is a mainstream of the silicon wafer production technology because of cost and environmental protection. However, diamond wire-cut polycrystalline silicon wafer texturing is a major factor in constraining popularization of diamond wire-cut polycrystalline silicon in battery manufacturing.
The diamond wire cutting of the polycrystalline silicon wafer cannot obtain a textured surface with uniform surface by a conventional method. There have been different attempts to texture-etch diamond wire cut silicon wafers.
Patent CN104328503a discloses a texturing method of polycrystalline silicon cut by diamond wire, which is mainly characterized in that a mixed acid solution is adopted to treat the surface of a silicon wafer, so that the surface of the silicon wafer forms a porous structure.
Patent CN 104962998A provides a method for preprocessing the texture of a silicon wafer based on diamond wire cutting, which comprises the following steps: a) Mixing a concentrated hydrofluoric acid solution, a hydrogen peroxide solution, metal salt and water to obtain a pretreatment solution; b) And (3) placing the silicon wafer cut by the diamond wire into the pretreatment liquid for pretreatment a until the cutting lines on the silicon wafer are basically removed.
The patent CN104576830 provides a texturing pretreatment liquid for diamond wire cutting polycrystalline silicon wafers, wherein the texturing pretreatment liquid comprises a first treatment liquid and a second treatment liquid A or B, the first treatment liquid is a mixed solution of concentrated hydrofluoric acid, hydrogen peroxide, metal salt and water, the treatment liquid A comprises nitric acid and strong alkali, and the treatment liquid B is a mixed solution of nitric acid, concentrated hydrofluoric acid and water; the pretreatment method has a great improvement effect on the texturing of the diamond wire-cut silicon wafer, but the obtained silicon wafer battery still has a remarkable difference in surface uniformity and reflectivity reduction compared with mortar wire-cut polycrystalline silicon.
Patent CN105304734 provides a polycrystalline silicon wafer texturing auxiliary agent and an application method thereof, wherein the auxiliary agent consists of a silver inducer, an oxidant, a buffer, a dispersing agent and deionized water. Adding the auxiliary agent into a traditional isotropic texturing solution consisting of a mixed solution of concentrated hydrofluoric acid and nitric acid, and immersing a polycrystalline silicon wafer into the texturing solution, wherein isotropic corrosion and anisotropic corrosion of the surface of the silicon wafer occur, so that the silicon surface with the reflectivity lower than 10% and coexisting with the same-direction corrosion pits and different-direction inverted pyramid morphology is obtained.
CN104393114 discloses a method for preparing polycrystalline black silicon with micro-nano composite textured structure, firstly, placing a polycrystalline silicon wafer into an etching solution to prepare the polycrystalline silicon wafer with micro-textured structure; then placing the silicon wafer into a metal ion compound solution to deposit metal nano particles on a micro-texture surface, and then placing the silicon wafer into an etching solution to etch to obtain a polycrystalline silicon wafer with a micro-nano composite texture surface structure; and (3) after cleaning and removing the metal particles remained on the surface, finally placing the metal particles in an alkaline solution to carry out micro-nano composite suede structure correction etching.
However, these methods have high cost and metal ions introduced, and have limitations in uniformity and electrical properties, and the color difference (particularly, the color difference between different interfaces) of the pile after the pile is made is large, which cannot be industrialized.
The acid etching solution of the acid isotropy texturing technology widely used at present is formed by mixing hydrofluoric acid (HF), nitric acid (HN 03) and pure water according to a certain proportion. In the method, nitric acid is used for oxidizing the surface of silicon, and hydrofluoric acid is used for continuously removing an oxide layer on the surface of silicon. The biggest characteristic of the process is very simple, but the process cannot be directly applied to the diamond wire cutting silicon wafer. The main problems are high reflectivity after texturing, poor uniformity of the textured surface, large chromatic aberration of the textured surface (especially chromatic aberration among different interfaces), low conversion efficiency of a silicon battery, and the like.
Disclosure of Invention
The invention aims to: a first object of the present invention is to provide a chemical composition of an optimizing agent for acidic texturing of a polycrystalline silicon wafer, which can be used as a surface texturing of an acidic polycrystalline silicon wafer, thereby obtaining a textured surface with uniform surface.
The second object of the invention is to provide the application of the optimizer chemical composition in preparing an acidic texturing solution for a mortar wire or a diamond wire cutting polycrystalline silicon wafer.
The technical scheme is as follows: the invention provides a chemical composition of a polycrystalline silicon wafer acid texturing optimizing agent, which is an aqueous solution, and the solute is: (1) a polymer having thiodiazoxide structural units; (2) a polyol or derivative thereof.
Preferably, the weight percentage of the polymer with thiobiazole structural units is 0.05-5%, preferably 0.1-3.0%; the structural form of the polymer with the thiodiazoxide structural unit is shown as (I):
wherein R is selected from alkoxy of 2-8 carbon atoms, alkyl of 1-10 carbon atoms or substituted alkyl; n is an integer of 2 or more.
As another preference, R is selected from alkyl groups of 1 to 5 carbon atoms; r is selected from hydroxyl-containing alkyl groups of 1 to 4 carbon atoms.
As another preferred, the weight percentage of the polyol or derivative thereof is 0.0001-15%, preferably 0.01-5%.
As another preferable example, the polyhydric alcohol or its derivative is polyethylene glycol having a molecular weight of 400 to 20000.
As another preferred, the solvent of the aqueous solution is deionized water.
The invention also provides application of the chemical composition of the polycrystalline silicon wafer acid texturing optimizing agent in the acid texturing of the polycrystalline silicon wafer cut by a mortar line or a diamond line.
The application comprises the following steps: adding the chemical composition of the polycrystalline silicon wafer acid texturing optimizing agent into a hydrofluoric acid-nitric acid mixed solution to obtain an acid texturing solution; immersing the mortar wire or the diamond wire cutting polycrystalline silicon wafer into the acidic texturing liquid for texturing.
The application comprises the following steps: the mass ratio of the chemical composition of the polycrystalline silicon wafer acid texturing optimizing agent to the mixed solution of hydrofluoric acid and nitric acid is (0.5-5) 100; in the hydrofluoric acid-nitric acid mixed solution, the mass percentage concentration of hydrofluoric acid is 5-15%, and the mass percentage concentration of nitric acid is 35-75%.
The application is that the temperature of the wool making is 5-20 ℃ and the wool making time is 60-300S.
The beneficial effects are that: the chemical composition provided by the invention has the advantages of simple preparation and use method, easiness in implementation and good repeatability, when the chemical composition is used for preparing the wool by using mortar wires or diamond wire cutting polycrystalline silicon, the wool preparing effect is obviously improved, the prepared silicon wafer has uniform surface appearance, low reflectivity and uniform appearance color after film coating, and compared with the wool preparing effect without adding auxiliary chemical composition, the wool preparing effect is obviously improved.
Drawings
Fig. 1 is a microscopic plan view of an unfused diamond wire cut polycrystalline silicon wafer surface for a solar cell.
Fig. 2 is a microscopic plan view of a textured surface of a diamond wire cut polycrystalline silicon wafer for solar cells using a mixed acid solution without the addition of the optimizer chemical composition of the present invention.
Fig. 3 is a microscopic plan view of the surface of a solar cell diamond wire-cut polycrystalline silicon wafer textured with a mixed acid solution added with a texturing solution ZHW 04.
Fig. 4 is a microscopic plan view of a solar cell diamond wire cut polycrystalline silicon wafer coated film obtained by texturing with a mixed acid solution without adding the optimizer chemical composition of the present invention.
Fig. 5 is a microscopic plan view of a solar cell diamond wire cut polycrystalline silicon wafer coated film obtained by texturing with a mixed acid solution added with a texturing solution ZHW 04.
Fig. 6 shows a microscopic plan view of the surface morphology of a mortar wire cut polycrystalline silicon wafer textured with a mixed acid solution added with a texturing solution ZHW.
Reference to literature
CN102816297A polymer based on biphenyl thiadiazole, preparation method and application thereof
Qian Yanbing Synthesis, structure and Properties of novel thiazole-ring-containing conjugated polymers, & gt, university of Ningbo, 2012
Detailed Description
The invention is further described below in conjunction with the detailed description. It is to be understood that these examples are illustrative of the present invention and are not intended to limit the scope of the present invention. Further, it is understood that various changes and modifications of the present invention may be made by those skilled in the art after reading the contents of the present invention, and these equivalents are equally applicable to the scope of the appended claims.
Example 1
A batch of chemical compositions of the polycrystalline silicon wafer acid texturing optimizers were prepared, and the formulations are shown in table 1.
TABLE 1
In the composition, the balance is deionized water.
Example 2
Preparing an acidic texturing solution:
example 3
Immersing the mortar wire or the diamond wire cutting polycrystalline silicon wafer into the acidic texturing solution in the embodiment 2 for texturing, wherein the texturing temperature is 5-20 ℃ and the texturing time is 60-300S.
For example:
(1) Taking diamond wire cutting polycrystalline silicon wafers for solar cells, and respectively immersing the polycrystalline silicon wafers into acidic texturing liquid for texturing, wherein the texturing conditions are as follows:
| example numbering | Texturing solution | Texturing temperature DEG C | Texturing time S |
| 01 | ZRY01 | 10 | 180 |
| 02 | ZRY02 | 15 | 180 |
| 03 | ZRY03 | 10 | 180 |
| 04 | ZRY04 | 15 | 180 |
| 05 | ZRY05 | 10 | 180 |
| 06 | ZRY06 | 15 | 180 |
| 07 | ZRY07 | 10 | 180 |
| 08 | ZRY08 | 15 | 180 |
| 09 | ZRY09 | 10 | 180 |
| 10 | ZRY10 | 20 | 60 |
| 11 | ZRY11 | 5 | 300 |
| 12 | ZRY12 | 20 | 120 |
| 13 | ZRY13 | 5 | 240 |
Fig. 1 shows the surface topography of an unfused diamond wire-cut polycrystalline silicon wafer for a solar cell, which exhibits a very non-uniform surface topography.
Fig. 2 shows the surface morphology of the diamond wire-cut polycrystalline silicon wafer textured for solar cells using the mixed acid solution without the addition of the optimizer chemical composition of the present invention, which has poor surface uniformity.
FIG. 3 shows the surface morphology of the solar cell diamond wire-cut polycrystalline silicon wafer textured with the mixed acid solution added with the texturing solution ZHW04, and the surface uniformity is very good; the same results were obtained with the texturing solutions ZRY01 to ZRY 13.
As can be seen from fig. 1 to 3, the distribution of the etched pile formed by the pile-forming liquid according to the present invention is relatively uniform.
Fig. 4 shows the subsequent coating process of diamond wire cut polycrystalline silicon wafer for solar cell obtained by texturing with mixed acid solution without adding the optimizer chemical composition of the invention, and it can be seen that the conventional texturing process has serious chromatic aberration and cannot be put into production.
Fig. 5 shows the subsequent coating process of the diamond wire cut polycrystalline silicon wafer for the solar cell obtained by texturing with the mixed acid solution added with the texturing solution ZHW04, and it is obvious that the obtained coated cell piece has good uniformity on the surface.
FIG. 6 shows the surface morphology of a mortar wire-cut polycrystalline silicon wafer textured with a mixed acid solution added with a texturing solution ZHW, and the surface uniformity is very good; the same results were obtained with the texturing solutions ZRY01 to ZRY 13.
The foregoing has been fully indicative of the embodiments of the invention. It should be noted that any modifications to the specific embodiments of the invention may be made by those skilled in the art without departing from the scope of the invention as defined in the appended claims. Accordingly, the scope of the claims of the present invention is not limited to the foregoing detailed description.
Claims (10)
1. The chemical composition of the polycrystalline silicon wafer acid texturing optimizing agent is characterized in that: the composition is an aqueous solution, and the solute is: (1) a polymer having thiodiazoxide structural units; (2) a polyol;
the weight percentage of the polymer with the thiobiazole structural unit is 0.05-5%; the structural form of the polymer with the thiodiazoxide structural unit is shown as (I):
wherein R is selected from an alkyleneoxy group of 2 to 8 carbon atoms, an alkylene group of 1 to 10 carbon atoms or a substituted alkylene group; n is an integer of 2 or more;
the weight percentage of the polyalcohol is 0.0001-15%, and the polyalcohol is polyethylene glycol with the molecular weight of 400-20000.
2. The chemical composition of a polycrystalline silicon wafer acid texturing optimizing agent according to claim 1, wherein: the weight percentage of the polymer with the thiobiazole structural unit is 0.1-3.0%.
3. The chemical composition of a polycrystalline silicon wafer acid texturing optimizing agent according to claim 1, wherein: r is selected from alkylene groups of 1 to 5 carbon atoms.
4. The chemical composition of a polycrystalline silicon wafer acid texturing optimizing agent according to claim 1, wherein: r is selected from hydroxyl-containing alkylene groups of 1 to 4 carbon atoms.
5. The chemical composition of a polycrystalline silicon wafer acid texturing optimizing agent according to claim 1, wherein: the weight percentage of the polyol is 0.01-5%.
6. The chemical composition of a polycrystalline silicon wafer acid texturing optimizing agent according to claim 1, wherein: the solvent of the aqueous solution is deionized water.
7. The use of the chemical composition of the polycrystalline silicon wafer acid texturing optimizing agent of claim 1 in the acid texturing of a mortar wire or diamond wire cut polycrystalline silicon wafer.
8. The use according to claim 7, wherein: the method comprises the following steps: adding the chemical composition of the polycrystalline silicon wafer acid texturing optimizing agent in the invention to a hydrofluoric acid-nitric acid mixed solution to obtain an acid texturing solution; immersing the mortar wire or the diamond wire cutting polycrystalline silicon wafer into the acidic texturing liquid for texturing.
9. The use according to claim 8, wherein: the method comprises the following steps: the mass ratio of the chemical composition of the polycrystalline silicon wafer acid texturing optimizing agent to the mixed solution of hydrofluoric acid and nitric acid is (0.5-5) 100; in the hydrofluoric acid-nitric acid mixed solution, the mass percentage concentration of hydrofluoric acid is 5-15%, and the mass percentage concentration of nitric acid is 35-75%.
10. The use according to claim 8, wherein: the texturing temperature is 5-20 ℃, and the texturing time is 60-300S.
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| CN102330154B (en) * | 2011-07-27 | 2012-08-01 | 常州时创能源科技有限公司 | Acidic texturing solution for texturing of polycrystalline silicon chip and using method thereof |
| CN103890139A (en) * | 2011-10-19 | 2014-06-25 | 东友精细化工有限公司 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
| CN103132079B (en) * | 2013-02-07 | 2015-07-08 | 睿纳能源科技（上海）有限公司 | Additive for acid texturing of diamond-wire-cutting polycrystalline silicon slices and application method thereof |
| CN104342702A (en) * | 2013-08-05 | 2015-02-11 | 南京科乃迪科环保科技有限公司 | Auxiliary chemical composition for monocrystalline silicon or polycrystalline silicon acidic wool making |
| CN103710705B (en) * | 2013-12-23 | 2016-01-20 | 北京合德丰材料科技有限公司 | A kind of additive of polycrystalline silicon wafer acidity texture preparation liquid and application thereof |
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| CN104532308A (en) * | 2014-12-31 | 2015-04-22 | 上海新阳半导体材料股份有限公司 | Leveling agent used for acidic copper electroplating and application thereof |
| CN106521634A (en) * | 2016-10-18 | 2017-03-22 | 湖州三峰能源科技有限公司 | Auxiliary chemical composition used for monocrystalline silicon or polycrystalline silicon acidic texturization and application thereof |
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