CN107210273B - 功率模块 - Google Patents
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Abstract
一种功率模块(10),该功率模块具有引线框(20)、安排在该引线框(20)上的功率半导体(30)、用于分散由该功率半导体(30)生成的热量的基板(40)以及围绕该引线框(20)和该功率半导体(30)的灌封化合物(50),该灌封化合物将该功率半导体(30)和/或该引线框(20)物理连接至该基板(40)。
Description
本发明涉及一种功率模块,该功率模块具有引线框、安排在该引线框上的功率半导体以及围绕该引线框和该功率半导体的灌封化合物。
功率半导体按照惯例地被塑胶(也就是说有机灌封化合物)围绕,以便一方面以保护这些功率半导体不受环境影响,并且另一方面将它们电绝缘。为此,塑胶部分地富含用于实现一定功能的填充物—例如灌封化合物富含用于调节特定的热膨胀行为的填充物。
尽管有机灌封化合物富含具有良好导热性的填充物,但是在灌封化合物中实现导热性的增加是令人失望的。
出于此原因,半导体的散热主要经由所谓的热堆栈来进行尝试,也就是说经由功率导体与衬底的良好导热连接以及经由功率导体与基板或散热片的良好热连接。
在某种情况下经由衬底中的陶瓷支撑层或者在其他情况下经由特殊的电绝缘有机导热薄膜来确保热堆栈的电绝缘能力。
这种构造以及制造以此方式构造的功率模块的过程的缺点现在是:由于为此目的所需的材料种类繁多,因此必须注意它们彼此之间的不同相互作用,例如化学相互作用或者还有热机械相互作用。由于这些相互作用,通常还需要实施彼此分离的或者一个接着一个的某些工艺步骤,这在工作和时间方面都产生了高额的支出。
本发明的目标因此是提供一种功率模块,该功率模块具有围绕功率半导体的灌封化合物,该模块具有简单的构造并且确保半导体具有良好散热。本发明的另一个目标是提供一种用于制造这种功率模块的简单且省时的方法。根据本发明,这些目标通过具有引线框、安排在引线框上的功率半导体、用于分散由功率半导体生成的热量的底板以及灌封化合物(该灌封化合物围绕引线框和功率半导体,并且将功率半导体和/或引线框连接至底板)的功率模块、以及一种用于制造功率模块的方法来实现,该方法具有以下步骤:将功率半导体连接至引线框,接下来通过利用灌封化合物对连接至引线框的功率半导体进行灌封,同时将基板物理连接至灌封化合物。
灌封化合物不仅充当封装的装置,从外部环境对半导体进行密封,而且还充当粘合剂,以永久的方式将包括半导体和引线框的结构固定至基板。
本发明的基本理念是实现功率半导体的灌封以及通过可在单个工艺中处理的同一种材料与散热片的连接。
所使用的灌封化合物可以是无机化合物。无机灌封化合物可以特别展现如例如对水泥来说众所周知的水结合机理。如灌封化合物一样,可考虑水泥(特别是在牙科技术中使用的牙科水泥的衍生物)作为。
通过水泥,指的是由将一种或多种粉末与一种或多种液体混合所产生的无机固体。这种化合物在建筑业和牙科学(其中一个示例是使用基本的金属氧化物粉末与酸性液体混合的水泥)是众所周知的。当混合时发生酸/碱反应,形成充当结合基质的金属盐。其他的制剂也是已知的。所产生的固体在一系列环境变化(诸如压力、温度、湿度或化学物质)下通常是稳定的,并且依附于各种其他材料。因此,其适合用于将那些材料以永久的方式进行物理连接。
灌封化合物(例如,水泥)可富含相应的电绝缘、导热填充物,从而使得该灌封化合物实现灌封、散热以及对应用于引线框和基板的功率半导体进行物理连接的功能。
水泥的物理化学特性特别使得以上提及的目的成为可能。
因此,可以按照5ppm/K至10ppm/K的数量级对热膨胀系数进行调整。
水泥的电绝缘能力在特定应用中可能是重要的参数,如高电压半导体(例如那些在600V或以上进行操作的那些高电压半导体)的参数。如果水泥具有与陶瓷绝缘板(如在通常使用的包括采用例如氧化铝(Al2O3)、氮化铝(AlN)或氮化硅(Si3N4)的陶瓷板的直接覆铜板(DBC)构造中使用的板)相同数量级的电绝缘能力,这可能是一个优势。实际上,但当前水泥可能具有比这种陶瓷板的电绝缘能力数量级更低的电绝缘能力,
在20μm至200μm的层厚的情况下,水泥的导热性绝对足以使引线框和基板进行充分的热接触。
用于分散已经由功率半导体发出的热量的基板可以被安排成具有高热容量和/或可以有助于热扩散。这里,基板可由金属(例如,铜(Cu)或铝(Al)或所谓的金属基体材料(特别是铝碳化硅(AlSiC)))制成。
除此之外,灌封物以及具有引线框、安排在引线框上的功率半导体以及用于分散由功率半导体生成的热量的功率模块的绝缘的制造可在一个步骤中进行,从而使得无机灌封化合物同时实现保护功能和热连接功能。
因此,根据本发明,可以提供一种功率模块,该功率模块具有引线框、安排在该引线框上的功率半导体、用于分散由该功率半导体生成的热量的基板以及围绕该引线框和该功率半导体的灌封化合物,该灌封化合物将该功率半导体和/或该引线框物理连接至该基板。
灌封化合物优选地为无机化合物,特别是水泥。
通常,灌封化合物优选地展现了5ppm/K至10ppm/K的热膨胀系数。
功率模块的构造特别使得灌封化合物展现了安排在引线框与基板之间的层。在这种情况下,这个安排在引线框与基板之间的层优选地展现出20μm至200μm的厚度。
然而,基板优选地被设计为散热片,例如被设计为与空气或水冷却器接口对接的部件。在功率半导体中生成的热量经由引线框传递至灌封化合物,并且然后传递至基板,并因此传递至冷却器。
一种根据本发明设计的用于制造具有引线框、功率半导体和基板的功率模块的方法展现了以下步骤:将功率半导体连接至引线框,并且其后,利用灌封化合物对连接至引线框的功率半导体进行灌封,同时将基板物理连接至灌封化合物。功率半导体与引线框的连接可以通过多种已知的技术来实现。这些技术可以包括钎焊、铜焊或烧结。
这里,引线框和基板相对于彼此被安排为使得具有优选地20μm至200μm的层厚的灌封化合物层被设计在引线框与基板之间,该灌封化合物为无机化合物,特别是水泥。
本发明的特别优选设计在于该灌封化合物通常展现出5ppm/K至10ppm/K的热膨胀系数。
使用在附图中展示的本发明的具有特别优选的设计的示例性实施例,将更加详细地解释本发明。在附图中:
图1示出了根据本发明的功率模块的示意性截面图;以及
图2示出了用于展示本发明方法的顺序的流程图。
图1示出了通过根据本发明的具有特别优选设计的功率模块的示意性横截面。功率模块10展现出引线框20以及安排在该引线框20上的功率半导体30。显而易见的是多个功率半导体和其他的电子部件也可以被安排在引线框20上。
引线框20和功率半导体30被优选的无机灌封化合物50围绕。灌封化合物50展现了对安排在引线框20上的功率半导体30进行机械保护和电绝缘的功能。除此之外,灌封化合物50实现引线框20与基板40之间的物理连接,从而使得引线框20和功率半导体30的灌封以及基板40与灌封化合物50的物理连接可以在一个工艺步骤中完成。
功率半导体30与引线框20的连接可以通过多种已知的技术来实现。这些技术可以包括钎焊、铜焊或烧结。灌封化合物50不仅充当封装(因此从外部环境对半导体进行密封)的装置,而且还充当粘合剂(以永久的方式将包括功率半导体30和引线框20的结构固定至基板40)。
出于此目的—如图2在此目的所需的工艺步骤的流程图中所示的—在第一步骤100中,首先将引线框20连接至功率半导体30。在第二步骤110中,利用灌封化合物50围绕连接至引线框20的功率半导体30,同时将基板40物理连接至灌封化合物50。
例如,这里可以设想基板40被***到模具中并且该模具填充有灌封化合物50。支撑功率半导体30的引线框20然后被降低到液体灌封化合物50中,同时与基板保持预定的距离。在(完全地)固化灌封化合物50之后,可将成品的功率模块10从模具中移除。
作为替代方案,基板40可被***到模具中,支撑功率半导体30的引线框20然后被安排在基板40上方,同时保持预定的距离并且在此位置保持不动。然后仅流动的灌封化合物50被转移到模具中并且围绕支撑功率半导体30的引线框20流动。在灌封化合物50的(完全)固化之后,支撑功率半导体30的引线框20然后完全被灌封化合物50围绕,基板40也被物理连接至灌封化合物50。
最后,还可以设想利用灌封化合物50(例如,通过浸入)来完全包封支撑功率半导体30的引线框20,并且在(完全)固化之前使该引线框与基板40接触。为此,例如出于固化灌封化合物50的目的,可在基板40上降低被浸入到灌封化合物50中的引线框20。在固化灌封化合物50期间,该灌封化合物50将自身(像粘合剂一样)连接至基板40,从而使得灌封化合物50将功率半导体30和/或引线框20物理连接至基板40。
Claims (7)
1.一种功率模块(10),具有
-引线框(20),
-功率半导体(30),该功率半导体被安排在该引线框(20)上,
-基板(40),该基板用于分散由该功率半导体(30)生成的热量,以及
-灌封化合物(50),该灌封化合物围绕该引线框(20)和该功率半导体(30),该灌封化合物将该功率半导体(30)和/或该引线框(20)物理连接至该基板(40),
其中该灌封化合物(50)展现了安排在整个引线框(20)与该基板(40)之间的层,
该灌封化合物(50)为无机化合物,以及
该无机化合物为水泥。
2.根据权利要求1所述的功率模块(10),其特征在于,该灌封化合物(50)展现了5ppm/K至10ppm/K的热膨胀系数。
3.根据权利要求1或2所述的功率模块(10),其特征在于,该灌封化合物(50)展现了在该引线框(20)与该基板(40)之间厚度为20μm至200μm的层。
4.根据权利要求1或2所述的功率模块(10),其特征在于,该基板(40)被设计为散热片。
5.一种用于制造功率模块(10)的方法,该功率模块具有引线框(20)、功率半导体(30)和基板(40),该方法具有以下步骤
-将该功率半导体(30)连接至该引线框(20),
-利用灌封化合物(50)对连接至该引线框(20)的该功率半导体(30)进行灌封,同时将该基板(40)物理连接至该灌封化合物(50),
其中该灌封化合物(50)展现了安排在整个引线框(20)与该基板(40)之间的层,
该灌封化合物(50)为无机化合物,以及
该无机化合物为水泥。
6.根据权利要求5所述的方法,其特征在于,具有20μm至200μm的层厚的灌封化合物(50)层被设计在该引线框(20)与该基板(40)之间。
7.根据权利要求5或6所述的方法,其特征在于,该灌封化合物(50)展现了5ppm/K至10ppm/K的热膨胀系数。
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