CN107204320B - Plain conductor, thin film transistor (TFT) and production method, array substrate and display device - Google Patents
Plain conductor, thin film transistor (TFT) and production method, array substrate and display device Download PDFInfo
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- CN107204320B CN107204320B CN201710379101.8A CN201710379101A CN107204320B CN 107204320 B CN107204320 B CN 107204320B CN 201710379101 A CN201710379101 A CN 201710379101A CN 107204320 B CN107204320 B CN 107204320B
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- film transistor
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- 239000004020 conductor Substances 0.000 title claims abstract description 38
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 28
- 239000011651 chromium Substances 0.000 claims abstract description 28
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 26
- 150000004767 nitrides Chemical class 0.000 claims abstract description 26
- 229910001182 Mo alloy Inorganic materials 0.000 claims abstract description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 21
- 229910052726 zirconium Inorganic materials 0.000 claims description 21
- 238000001556 precipitation Methods 0.000 claims description 16
- 239000002244 precipitate Substances 0.000 claims description 14
- 239000000243 solution Substances 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 8
- 239000006104 solid solution Substances 0.000 claims description 5
- 230000032683 aging Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 35
- 229910052751 metal Inorganic materials 0.000 abstract description 26
- 239000002184 metal Substances 0.000 abstract description 26
- 238000000034 method Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 230000006641 stabilisation Effects 0.000 abstract description 3
- 238000011105 stabilization Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 110
- 239000010949 copper Substances 0.000 description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 21
- 229910052802 copper Inorganic materials 0.000 description 21
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- QRSFFHRCBYCWBS-UHFFFAOYSA-N [O].[O] Chemical compound [O].[O] QRSFFHRCBYCWBS-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to field of display technology more particularly to a kind of plain conductors, thin film transistor (TFT) and production method, array substrate and display device.A kind of plain conductor is applied to thin film transistor (TFT) comprising the copper alloy containing chromium, zr element.The present invention forms conductive layer by using copper alloy, upper surface forms and nitride layer is precipitated again after certain treatment process, bottom is formed using molybdenum alloy, high conductivity, high tenacity can be not only realized to a certain extent, more effectively reduce the response time that power consumption improves display panel, ensure display effect and exhibit stabilization, while simplifying metal film structures, reduction related device or system complexity made in one piece and effectively save the cost.
Description
[technical field]
The present invention relates to field of display technology more particularly to a kind of plain conductors, thin film transistor (TFT) and production method, array
Substrate and display device.
[background technique]
With the continuous development of LCD technology, people are for high-resolution, high colorfulness and high-definition aobvious
Display screen demand is more strong.In the response time for improving display panel and power consumption is reduced, in production tft array substrate
When, metal layer mostly uses the metals such as the lesser copper of resistivity, silver to be made.
But in the prior art, if using copper as metallic diaphragm, there is a problem of that copper oxidation resistance is weak；Such as
Fruit is considered as three-decker and solves the problems, such as that the oxidation resistance of copper is weak, then exist etch unstable and top layer's film layer with
Photoresist adhere to the problem of, wherein three-decker be generally upper and lower level be all made of Mo be made and middle layer using conductivity it is higher
Metal be made；Meanwhile if it is considered that solving the above problems using alloy as metallic diaphragm, then have that electric conductivity is too low and nothing
Method guarantees the problem of working normally.
[summary of the invention]
The purpose of the present invention is intended to provide a kind of plain conductor, thin film transistor (TFT) and production method, array substrate and display
Device.It include chromium and zirconium in copper alloy, wherein due to chromium, zirconium corrosion with higher in the plain conductor, including copper alloy
Current potential improves the metal current potential of copper after copper is added, to improve the oxidation resistance of copper.
To realize the purpose, the present invention provides a kind of plain conductor, it is applied to thin film transistor (TFT), including contain chromium, zirconium
The copper alloy of element.
Specifically, chromium content is 0.20-0.50%wt, zirconium content 0.20-0.30%wt in the copper alloy.
Further, the plain conductor includes conductive layer and the analysis that precipitate is formed in upper surface is precipitated by conductive layer
Nitride layer out；The conductive layer includes copper alloy, and the precipitation nitride layer includes chromium, zr element.
Further, the conductive layer thickness is
Further, the plain conductor further includes the bottom for being bonded the conductive layer lower surface, and the bottom includes
Molybdenum alloy containing zr element.
Specifically, zirconium content is 0.25-0.35%wt in the molybdenum alloy.
Further, the underlayer thickness is
Another thin film transistor (TFT) is also provided, including plain conductor described in any technical solution as above.
Specifically, the thin film transistor (TFT) includes grid, gate insulating layer, active layer, source electrode and drain electrode, wherein institute
Grid, source electrode and drain electrode are stated using double-layer structure.
Further, the source electrode in the thin film transistor (TFT) and drain electrode all serve as conductive electrode using the plain conductor.
Further, the gate insulating layer is the upper layer film layer for being bonded the grid, specially silica membrane, nitrogen
At least one of SiClx film, silicon oxynitride film, aluminum oxide film, thin film of titanium oxide.
Further, the active layer is deposited using indium gallium zinc oxide.
The production method of another thin film transistor (TFT) is also provided, is applied to thin film transistor (TFT) as described above, including use
Copper alloy containing chromium, zr element is formed in the thin film transistor (TFT) after conductive layer, forms precipitate in the conductive layer upper surface
The step of layer:
Solid solution, solution treatment 20min~40min at being 280-350 DEG C in temperature by the substrate for carrying the conductive layer；
Timeliness, when will carry the substrate furnace cooling of the conductive layer to 150-200 DEG C, carry out ageing treatment 20min~
40min；
It is cooling, the substrate for carrying the conductive layer is quickly cooled down with the speed of 10-15 DEG C/min.
A kind of array substrate is also provided, including thin film transistor (TFT) described in any technical solution as above.
A kind of display device is also provided, including array substrate described in any technical solution as above.
Compared with prior art, the present invention has following advantage:
It include chromium and zirconium in copper alloy in plain conductor provided by the invention, including copper alloy, wherein since chromium, zirconium have
There is higher corrosion potential, improves the metal current potential of copper after copper is added to improve the oxidation resistance of copper.The copper closes
Gold forms the conductive layer in plain conductor, and precipitate formation precipitation nitride layer is precipitated in surface to the conductive layer on it, due to being precipitated
The formation of nitride layer, so that, since what is first contacted is that nitride layer is precipitated, being brought to conductive layer in the reaction process of plain conductor and oxygen
Stronger protective effect.Simultaneously as the precipitation of chromium, zr element forms precipitation nitride layer in conductive layer, conductive layer substance is reduced
Doping, improve the conductivity of conductive layer.Further, the plain conductor further includes bottom, wherein the formation material of bottom
Material is molybdenum alloy, and in molybdenum alloy includes zr element, since there are higher toughness for zirconium, and can drop low-alloyed stacking fault
Can, that is, soften metal and make it have higher toughness, plain conductor obtains more preferably performance.
Further, in thin film transistor (TFT) provided by the invention, using above-mentioned plain conductor, the natural succession gold
Belong to all advantages of conducting wire.Specifically, in the thin film transistor (TFT) provided, source electrode and drain electrode are constituted using the plain conductor,
It is specially double-layer structure, improves the stability of etching, and the efficiency of production.
Meanwhile after forming the conductive layer in plain conductor provided by the invention, analysis is formed on the surface of the conductive layer
Out in the step of nitride layer, by the way that the substrate fixation rates of the conductive layer will be carried, formed by copper alloy as target
Precipitate is precipitated in conductive layer, by being cooled into cured precipitation nitride layer；It is interior due to passing through this method solid solution, the processing of timeliness
The reduction of portion's particle improves the electric conductivity of copper alloy；The film soon formed in copper alloy due to cooling processing, precipitate
Layer surface solidification, strengthens the protective effect to thin film transistor (TFT).
Meanwhile array substrate provided by the invention is formed using above-mentioned thin film transistor (TFT), therefore, the array is natural
Inherit all advantages of the thin film transistor (TFT).
Correspondingly, display device provided by the invention can be display panel, and the display panel is to use above-mentioned array base
Plate is made；In addition, display device can also be the device with display panel.
To sum up, the present invention can not only realize high conductivity, high tenacity to a certain extent, more effectively reduce power consumption and improve
The response time of display panel, it is ensured that display effect and exhibit stabilization, while simplify metal film structures, reduce related device or
System complexity made in one piece and effectively save the cost.
[Detailed description of the invention]
Fig. 1 is a kind of structural schematic diagram of one embodiment of thin film transistor (TFT) in the present invention.
Fig. 2 is a kind of structural schematic diagram of one embodiment of plain conductor, specially conductive layer and analysis in the present invention
The structural schematic diagram of nitride layer out.
Fig. 3 is a kind of structural schematic diagram of another embodiment of plain conductor in the present invention, specially conductive layer, precipitation
Nitride layer and the structure of bottom are intended to.
Fig. 4 is a kind of production method flow chart of thin film transistor (TFT) in the present invention.
[specific embodiment]
The present invention is further described with exemplary embodiment with reference to the accompanying drawing, wherein identical label in attached drawing
All refer to identical component.In addition, if the detailed description of known technology is for showing the invention is characterized in that unnecessary
, then it omits it.
The core of the flat-panel monitor of high quality is thin film transistor (TFT) (Thinfilmtransistor, TFT), TFT substrate
The process of production generally comprises: cleaning, film forming, PR coating, exposure, development, etching, PR removing.Wherein, film forming divide metal film and
Non-metallic film.Metal film uses PVD, i.e. the mode of physical vapor deposition forms a film, and is called sputtering.Non-metallic film uses CVD, that is, changes
The mode for learning vapor deposition forms a film, identical as semiconductor technology, and the plasma CVD i.e. mode of PECVD is mainly taken to form a film,
PECVD film forming film kind includes: G-SiNx (gate switch), L-a Si (electron channel), H-a Si (reducing photoelectric current), n+a Si
(signal wire transmission), PA-SiNx (protective layer, anticorrosive).In the film forming procedure of metal film comprising to grid, source electrode, leakage
The deposition of extremely equal metal electrodes.And to the deposition of its film layer, form TFT plain conductor.
As shown in Figure 1, including that a kind of metal is led the present invention provides a kind of thin film transistor (TFT), in the thin film transistor (TFT)
Line.Specifically, the plain conductor can be used for grid 1, source electrode 2 and drain electrode 3, it is preferable that in the present embodiment, the metal
Conducting wire is for source electrode 2 and drain electrode 3.The plain conductor includes the copper Cu alloy containing chromium Cr, zirconium Zr element.Art technology
Personnel will affect the original characteristic of its metal it is found that when being added or adulterate in a metal other substances.In the present embodiment, when
When using the high copper metal of conductivity as plain conductor target, due to consideration that the oxidation resistance of copper is weaker, when wanting to mention
When its high oxidation resistance, but the problem of metallic conductivity reduces is faced, so present inventor selects to be added into copper
Other substances of total content less than 1%, it is preferable that other described substances are chromium, zirconium.Wherein, chromium content is in the copper alloy
0.20-0.50%wt, zirconium content 0.20-0.30%wt.Since alloy chromium, zirconium all have higher corrosion potential, institute is previous
Chromium is added in copper, zirconium can effectively improve copper metal current potential to improve oxidation resistance；Simultaneously as chromium, zirconium are easy passivation,
The protective film layer of even compact is formed in metal surface, can preferably improve the oxidation resistance of metal.
Further, as shown in Fig. 2, being different from above-described embodiment, the present invention also provides another embodiments, specially adopt
It (include chromium, zr element, when copper alloy mentioned below is the copper alloy containing chromium, zr element, is otherwise noted with the copper alloy
Except) metal targets are used as, (conductivity of conductive layer 11 is decided by that copper closes to the conductive layer 11 formed in plain conductor at this time
Gold).The conductive layer 11 with a thickness ofIt, after treatment, can be in conduction after forming conductive layer 11
The surface (including upper and lower surfaces, in this embodiment preferred upper surface) of layer 11 forms one layer of uniform precipitate rich in chromium, zirconium
Layer 111 protects conductive layer 11 not influenced by extraneous oxygen, and improves the roughness on surface.The precipitation nitride layer 111 mainly by
Precipitate is precipitated in conductive layer 11 to be formed, specifically, the precipitation nitride layer 111 includes CrCu2(Zr), and with a small amount of Cu5Cr。
Due to including chromium, zirconium in the precipitation nitride layer 111, it was demonstrated that in conductive layer 11 original contained chromium, zirconium content reduce, and analyse
Reduction of the precipitation also with 11 internal particle of conductive layer of object out is improved the conductivity of copper alloy (when it is added
The conductivity that copper can be reduced when his alloy will make the conductivity of copper alloy when other substances of the part in copper alloy are precipitated
Restore), in the present embodiment, show that, when precipitate is precipitated, the electric conductivity of copper alloy can be restored to 92% by test
IACS (fine copper is greater than 98%IACS).
Further, as shown in figure 3, being different from above-described embodiment, the present invention also provides another embodiments, specially
The plain conductor further includes the molybdenum Mo alloy containing zr element, it is preferable that the molybdenum alloy (includes zr element, molybdenum mentioned below
Be the molybdenum alloy containing zr element when alloy, unless otherwise specified) in zirconium content be 0.25-0.35%wt.The molybdenum closes
Gold be used as metal targets, formed plain conductor in be bonded 11 lower surface of conductive layer bottom 12 (bottom 12 with a thickness of).Further, (soften since low-alloyed stacking fault energy can drop in the presence of zirconium a small amount of in the bottom 12
Metal makes it have higher toughness), be conducive to conductive layer 11 and better contacted at cross-line with bottom 12.
Preferably, through the foregoing embodiment explanation is as it can be seen that the plain conductor includes following film layer:
Conductive layer 11, the copper alloy composition of You Hange, zr element；
Bottom 12 is fitted in the lower surface of the conductive layer 11, is made of the molybdenum alloy containing zr element.
It further, further include the precipitation nitride layer 111 for being formed in 11 upper surface of conductive layer, the precipitation nitride layer 111
It is made of the precipitate of conductive layer 11.Nitride layer 111 is precipitated since in the present embodiment, the upper surface of conductive layer 11 has, it can be very
Conductive layer 11 is protected not influenced by extraneous oxygen well, so in the present embodiment, double-layer structure is selected to be enough to prevent copper surface
The generation of problem of oxidation, while the stability of etching is also improved using double-layer structure, and since the surface of film layer is precipitate
Layer 111 has better solved the problem of upper layer film layer is with photoresist adhesion strength in the prior art.
In thin film transistor (TFT) film forming procedure, the source electrode 2 of formation drains 3 due to being easy ingress of air, is preferably formed as described
The structure of plain conductor.When depositing grid 1, since the upper layer film layer of grid 1 is usually gate insulating layer, oxygen oxygen it is not related to
The problem of change, so the grid 1 can be selected common metal film deposition and be formed.In the present embodiment, due to consideration that it is described
The presence of gate insulating layer, so the grid 1 selects double-layer structure.Common metal can be used in conductive layer in the grid 1
Target forms (alloy target material provided by the invention also can be selected to be formed), and bottom selects the bottom of plain conductor in above-described embodiment
12.The gate insulating layer is silica membrane, silicon nitride film, silicon oxynitride film, aluminum oxide film, thin film of titanium oxide
At least one of.It is active layer close to the gate insulating layer, the active layer is deposited using indium gallium zinc oxide.
When depositing source electrode 2, drain electrode 3, the film layer structure in plain conductor described in above-described embodiment, i.e. source electrode 2, leakage are selected
The conductive layer of pole 3 selects the conductive layer 11 in above-described embodiment, and the upper surface of conductive layer 11 includes that nitride layer 111 is precipitated；Source electrode 2,
The bottom of drain electrode 3 selects the bottom 12 in plain conductor described in above-described embodiment.
As shown in figure 4, being mainly used in above-described embodiment the present invention also provides a kind of production method of thin film transistor (TFT)
In thin film transistor (TFT) described in any technical solution, specifically includes and the film is formed using the copper alloy containing chromium, zr element
In transistor after conductive layer 11, the step of nitride layer 111 are precipitated is formed in 11 upper surface of conductive layer:
S101 solid solution, will carry solution treatment 20min at the substrate of the conductive layer 11 is 280-350 DEG C in temperature~
40min.Preferably, solution treatment 30min.
S102 timeliness carries out ageing treatment when will carry the substrate furnace cooling of the conductive layer 11 to 150-200 DEG C
20min~40min.Preferably, ageing treatment 30min.
S103 is cooling, and the substrate for carrying the conductive layer 11 is quickly cooled down with the speed of 10-15 DEG C/min.
The step of solid solution, timeliness, makes conductive layer 11 form precipitate on surface after certain processing, described
Cooling step makes precipitate rapid curing form precipitation nitride layer 111.Through this embodiment after provided production method, make
It obtains conductive layer 11 and precipitate is precipitated to constitute precipitation nitride layer 111, due to being precipitated while ensure that the conductivity of conductive layer 11
The presence of nitride layer 111 protects conductive layer 11 preferably.
In another embodiment, a kind of array substrate is also provided, including as described in technical solution any in above-described embodiment
Thin film transistor (TFT), be specially the TFT of a kind of alloying high conductivity, high tenacity.
In another embodiment, a kind of display device is also provided, including as described in technical solution any in above-described embodiment
Array substrate.The display device refers to that people feels the device for obtaining information by visual sense, and specifically, the display device is natural
The all advantages of the array substrate are inherited, can be single display panel, such as be used to be mounted on the aobvious of the screen of computer
Show panel；Further, the display device can be Electronic Paper, oled panel, mobile phone, tablet computer, television set, display
Any products or components having a display function such as device, laptop, Digital Frame, navigator.
To sum up, the present invention forms conductive layer by using copper alloy, and upper surface forms analysis again after certain treatment process
Nitride layer out forms bottom using molybdenum alloy, can not only realize high conductivity, high tenacity to a certain extent, more effectively reduce
The response time of power consumption raising display panel, it is ensured that display effect and exhibit stabilization, while simplifying metal film structures, reducing phase
Answer device or system complexity made in one piece and effectively save the cost.
Although having been illustrated with some exemplary embodiments of the invention above, those skilled in the art will be managed
Solution, in the case where not departing from the principle of the present invention or spirit, can make a change these exemplary embodiments, of the invention
Range is defined by the claims and their equivalents.
Claims (6)
1. a kind of plain conductor is applied to thin film transistor (TFT), which is characterized in that plain conductor includes conductive layer, the conductive layer
The bottom of precipitation nitride layer and the fitting conductive layer lower surface that precipitate is formed in upper surface is precipitated；The conductive layer by
Copper alloy containing chromium, zr element is constituted, and chromium content is 0.20-0.50%wt, zirconium content 0.20-0.30% in the copper alloy
wt；The precipitation nitride layer includes chromium, zr element, and the bottom is made of the molybdenum alloy containing zr element, and zirconium contains in the molybdenum alloy
Amount is 0.25-0.35%wt.
2. a kind of thin film transistor (TFT), which is characterized in that including plain conductor as described in claim 1.
3. thin film transistor (TFT) according to claim 2, which is characterized in that source electrode and drain electrode in the thin film transistor (TFT) are all
Conductive electrode is served as using the plain conductor.
4. a kind of production method of thin film transistor (TFT) is applied to thin film transistor (TFT) described in claim 2 or 3, which is characterized in that
After forming the conductive layer in the thin film transistor (TFT) using the copper alloy containing chromium, zr element, in the conductive layer upper surface
Form the step of nitride layer is precipitated:
Solid solution, solution treatment 20min~40min at being 280-350 DEG C in temperature by the substrate for carrying the conductive layer；
Timeliness, when will carry the substrate furnace cooling of the conductive layer to 150-200 DEG C, carry out ageing treatment 20min~
40min；
It is cooling, the substrate for carrying the conductive layer is quickly cooled down with the speed of 10-15 DEG C/min.
5. a kind of array substrate, which is characterized in that including thin film transistor (TFT) described in claim 2 or 3.
6. a kind of display device, which is characterized in that including the array substrate described in claim 5.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710379101.8A CN107204320B (en) | 2017-05-25 | 2017-05-25 | Plain conductor, thin film transistor (TFT) and production method, array substrate and display device |
| PCT/CN2018/086560 WO2018214758A1 (en) | 2017-05-25 | 2018-05-11 | Metal wire, thin-film transistor and manufacturing method therefor, array substrate and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710379101.8A CN107204320B (en) | 2017-05-25 | 2017-05-25 | Plain conductor, thin film transistor (TFT) and production method, array substrate and display device |
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| Publication Number | Publication Date |
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| CN107204320A CN107204320A (en) | 2017-09-26 |
| CN107204320B true CN107204320B (en) | 2019-11-29 |
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| WO (1) | WO2018214758A1 (en) |
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| CN107204320B (en) * | 2017-05-25 | 2019-11-29 | 京东方科技集团股份有限公司 | Plain conductor, thin film transistor (TFT) and production method, array substrate and display device |
| CN110085602A (en) | 2019-04-22 | 2019-08-02 | 武汉华星光电半导体显示技术有限公司 | Metal wiring film and preparation method thereof, thin film transistor (TFT) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1375871A (en) * | 2001-03-01 | 2002-10-23 | 株式会社东芝 | Semiconductor device and mfg. method for same |
| CN1400855A (en) * | 2001-01-30 | 2003-03-05 | 日鉱金属股份有限公司 | Copper alloy foil for integrated board |
| CN104701384A (en) * | 2015-04-09 | 2015-06-10 | 京东方科技集团股份有限公司 | Thin film transistor, preparation method thereof, array substrate and display device |
| CN105112720A (en) * | 2015-09-08 | 2015-12-02 | 周欢 | Copper alloy used for wire |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3731600B2 (en) * | 2003-09-19 | 2006-01-05 | 住友金属工業株式会社 | Copper alloy and manufacturing method thereof |
| CN102314271B (en) * | 2010-07-07 | 2014-11-05 | 宸鸿科技(厦门)有限公司 | Capacitive touch graphic structure and manufacturing method thereof, touch panel and touch display device |
| JP2015086452A (en) * | 2013-11-01 | 2015-05-07 | 株式会社オートネットワーク技術研究所 | Copper alloy wire, copper alloy twisted wire, coated cable, wire harness and manufacturing method of copper alloy wire |
| CN106544533B (en) * | 2014-11-11 | 2018-09-04 | 芜湖市民泰铜业有限责任公司 | A kind of preparation method of high-strength highly-conductive conducting wire copper alloy |
| CN106086511B (en) * | 2016-08-10 | 2018-09-14 | 安徽晋源铜业有限公司 | A kind of high-performance copper conducting wire and preparation method thereof |
| CN107204320B (en) * | 2017-05-25 | 2019-11-29 | 京东方科技集团股份有限公司 | Plain conductor, thin film transistor (TFT) and production method, array substrate and display device |
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2017
- 2017-05-25 CN CN201710379101.8A patent/CN107204320B/en not_active Expired - Fee Related
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2018
- 2018-05-11 WO PCT/CN2018/086560 patent/WO2018214758A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1400855A (en) * | 2001-01-30 | 2003-03-05 | 日鉱金属股份有限公司 | Copper alloy foil for integrated board |
| CN1375871A (en) * | 2001-03-01 | 2002-10-23 | 株式会社东芝 | Semiconductor device and mfg. method for same |
| CN104701384A (en) * | 2015-04-09 | 2015-06-10 | 京东方科技集团股份有限公司 | Thin film transistor, preparation method thereof, array substrate and display device |
| CN105112720A (en) * | 2015-09-08 | 2015-12-02 | 周欢 | Copper alloy used for wire |
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| WO2018214758A1 (en) | 2018-11-29 |
| CN107204320A (en) | 2017-09-26 |
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