CN107196609B - Graphene radio frequency amplifier - Google Patents
Graphene radio frequency amplifier Download PDFInfo
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- CN107196609B CN107196609B CN201710400411.3A CN201710400411A CN107196609B CN 107196609 B CN107196609 B CN 107196609B CN 201710400411 A CN201710400411 A CN 201710400411A CN 107196609 B CN107196609 B CN 107196609B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 51
- 239000003990 capacitor Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000000903 blocking effect Effects 0.000 claims abstract description 16
- 238000003466 welding Methods 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims 1
- 238000004088 simulation Methods 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000005672 electromagnetic field Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a graphene radio frequency amplifier, and relates to the technical field of amplifiers. The amplifier comprises a printed circuit board, wherein the circuit board comprises a substrate, and the upper surface of the substrate is provided with a graphene P-channel MOSFET tube core, an input end blocking capacitor, an input impedance converter, a 1/4 wavelength input microstrip line, an external grid voltage, a bypass capacitor, a first bonding pad, a 1/4 wavelength output microstrip line, an output end impedance converter, a welding spot of the external drain voltage and an output end blocking capacitor. The first bonding pad is connected with the grid electrode of the MOSFET tube core through a bonding alloy wire; the source electrode of the MOSFET tube core is grounded; the drain of the MOSFET die is connected to one end of the output impedance transformer. The amplifier can realize higher gain and has good standing wave ratio.
Description
Technical Field
The invention relates to the technical field of amplifiers, in particular to a graphene radio frequency amplifier capable of realizing higher gain and good standing-wave ratio.
Background
Graphene is a semiconductor material with good electrical properties, and the mobility of the graphene can reach 1000000 cm at the highest 2 /(v.s), highest among all known semiconductor materials. The radio frequency amplifier is an important application field of graphene. Andersson et al in 2012 reported a graphene radio frequency amplifier with a gain of 10dB and a noise figure of 6.4dB at 1 GHz. However, the bias voltage of the active device is applied through the signal pin of the microwave probe, so that the circuit structure of the amplifier is not complete and the application thereof is limited. In 2014 Jaohong Lee et al reported a graphene RF amplifier with a gain of 1.3dB at 380 MHz. The frequency and gain of the amplifier are both relatively low. The graphene amplifier is realized on a printed circuit board. Graphene radio frequency amplifier monolithic integrated circuits with gain of 3.4dB and noise figure of 6.2dB at 14.3GHz were reported by c.yu et al in 2016. The amplifier operates at a relatively high frequency, but the bias voltage of the active device is applied through the signal pin of the microwave probe, and the amplifier is electrically connectedThe way structure is incomplete and the gain is low.
Disclosure of Invention
The invention aims to solve the technical problem of providing a graphene radio frequency amplifier capable of realizing higher gain and good standing-wave ratio.
In order to solve the technical problems, the invention adopts the following technical scheme: a graphene radio frequency amplifier is characterized in that: the circuit board comprises a substrate, wherein a graphene P-channel MOSFET tube core is arranged on the upper surface of the substrate, one end of an input end blocking capacitor is a signal input end of the amplifier, the other end of the input end blocking capacitor is connected with one end of an input impedance converter, the other end of the input impedance converter is divided into two paths, a first path is connected with one end of a 1/4 wavelength input microstrip line, the other end of the 1/4 wavelength input microstrip line is divided into two paths, the first path is connected with a welding spot of an external grid voltage, and the second path is grounded through a bypass capacitor; the second path of the other end of the input impedance converter is connected with a first bonding pad through an input end inductor, and the first bonding pad is connected with the grid electrode of the MOSFET tube core through a bonding alloy wire; the source electrode of the MOSFET tube core is grounded; the drain electrode of the MOSFET tube core is connected with one end of the output end impedance converter, one end of the 1/4 wavelength output microstrip line is connected with one end of the output end impedance converter, which is provided with a key alloy wire, the other end of the 1/4 wavelength output microstrip line is divided into two paths, the first path is connected with a welding spot of the externally-applied drain pressure, and the second path is grounded through a bypass capacitor; the other end of the output end impedance converter is connected with one end of an output end blocking capacitor, and the other end of the output end blocking capacitor is a signal output end of the amplifier.
The further technical proposal is that: the lower surface of the substrate is provided with a back metal for grounding, a metallized via hole is arranged between a grounding pad positioned on the upper surface of the substrate and the back metal, a screw is arranged in the metallized via hole, and the grounding pad is connected with the back metal through the screw; the bypass capacitor and bond wires connected to the source of the MOSFET die are connected to the ground pad.
The further technical proposal is that: the MOSFET tube core, the capacitor and the inductor are fixed on a bonding pad on the upper surface of the substrate through conductive adhesive.
The further technical proposal is that: the microwave signal input end connector is connected with the signal input end of the amplifier, and the microwave signal output end connector is connected with the signal output end of the amplifier.
The further technical proposal is that: the amplifier also comprises a box body, the printed circuit board is fixed in the box body through screws, the input end connector and the output end connector are fixed outside the box body, and the input end connector and the output end connector are connected with the capacitor through a conversion plug.
The further technical proposal is that: the input impedance converter is a copper microstrip line with the length of 1536 micrometers, the width of 64 micrometers and the thickness of 30 micrometers; the 1/4 wavelength input microstrip line is 1480 microns long and 44 microns wide.
The further technical proposal is that: the input impedance converter is a copper microstrip line with the length of 710 micrometers, the width of 50 micrometers and the thickness of 30 micrometers; the 1/4 wavelength input microstrip line is 720 microns long and 30 microns wide.
The further technical proposal is that: the input impedance converter is a copper microstrip line with the length of 430 micrometers, the width of 60 micrometers and the thickness of 30 micrometers; the 1/4 wavelength input microstrip line has a length of 420 micrometers and a width of 30 micrometers.
The further technical proposal is that: the MOSFET tube core comprises a silicon carbide substrate epitaxially grown by graphene and a tube core body on the substrate, wherein a source electrode is respectively arranged on the front side and the rear side of a table surface area of the silicon carbide substrate, the source electrode is partially overlapped with the table surface area, a grid electrode is arranged on the left side of the table surface area, two grid bars connected with the grid electrode and extending rightwards are arranged on the right side of the grid electrode, a drain electrode is arranged on the right side of the table surface area, a source bar connected with the drain electrode and extending leftwards is arranged on the left side of the drain electrode, and the source bar is positioned between the two grid bars.
The further technical proposal is that: a grid bar is arranged between the grid bar and the silicon carbide substrateLayer Al 2 O 3 As the under-gate oxide of the MOSFET.
The beneficial effects of adopting above-mentioned technical scheme to produce lie in: the graphene radio frequency amplifier is designed based on a small signal model of a device. And adopting an inductor and a microstrip line on the printed circuit board to carry out output and output matching. A1/4 wavelength microstrip line is used as a bias circuit, and a capacitor is used for conducting bypass of the isolation circuit and the bias circuit. The graphene radio frequency amplifier can achieve higher gain and good standing-wave ratio.
Drawings
Fig. 1 is a schematic top view of a graphene MOSFET die in an amplifier according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram of a physical structure of a printed circuit board in an amplifier according to an embodiment of the invention;
fig. 3 is a schematic diagram of a connection manner among a printed circuit board, a box, a die, a component, and a connector in an amplifier according to an embodiment of the present invention;
FIG. 4 is a schematic top view of an amplifier according to an embodiment of the invention;
FIG. 5 is a graph of gain and standing wave simulation of an L-band graphene amplifier in the amplifier according to an embodiment of the present invention;
FIG. 6 is a graph of gain and standing wave simulation of an S-band graphene amplifier in the amplifier according to an embodiment of the present invention;
FIG. 7 is a graph showing gain and standing wave simulation curves of a C-band graphene amplifier in the amplifier according to an embodiment of the present invention;
wherein: 1. graphene P-channel MOSFET die 101: silicon carbide substrate 102: mesa region 103: source 104: drain electrode 105: grid 106: gate 107: source bar 2, printed circuit board 201: substrate 202: backside metal 203, pad 204: fixed via 205: ground pad 206: the device comprises a metallized via 302, a box body 304, an inductor, a capacitor element 307, a conversion plug 309, a conductive adhesive 401, a microwave signal input end connector 402, a microwave signal output end connector 403, an input end blocking capacitor 404, an input impedance transformer 405, an input end inductor 406, a 1/4 wavelength input microstrip line 407, a welding point 408 for externally adding grid voltage, a bypass capacitor 409, a screw 412, a bond wire 413, an output end impedance transformer 414, an output end blocking capacitor 415, a 1/4 wavelength output microstrip line 416 and a welding point for externally adding drain voltage.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 4, the embodiment of the invention discloses a graphene radio frequency amplifier, which comprises a printed circuit board 2, wherein the circuit board comprises a substrate 201, and a graphene P-channel MOSFET die 1 is arranged on the upper surface of the substrate 201. One end of the input end blocking capacitor 403 is a signal input end of the amplifier, the other end of the input end blocking capacitor 403 is connected with one end of the input impedance converter 404, the other end of the input impedance converter 404 is divided into two paths, the first path is connected with one end of the 1/4 wavelength input microstrip line 406, the other end of the 1/4 wavelength input microstrip line 406 is divided into two paths, the first path is connected with a welding spot 407 of an externally-applied grid voltage, and the second path is grounded through the bypass capacitor 408; the second path at the other end of the input impedance converter 404 is connected with a first bonding pad through an input end inductor 405, and the first bonding pad is connected with the grid electrode of the MOSFET die through a bond alloy wire 412; the input impedance transformer 404 and the inductor 405 form an input impedance matching circuit, so that the input impedance is matched to 50 ohms, and the design of the input impedance matching circuit is realized based on a small signal model of the device.
The source electrode of the MOSFET tube core is grounded; the drain electrode of the MOSFET tube core is connected with one end of the output end impedance converter 413, one end of the 1/4 wavelength output microstrip line 415 is connected with one end of the output end impedance converter 413 with a key alloy wire, the other end of the 1/4 wavelength output microstrip line 415 is divided into two paths, the first path is connected with a welding point 416 with external leakage voltage, and the second path is grounded through a bypass capacitor 408; the other end of the output end impedance transformer 413 is connected with one end of an output end blocking capacitor 414, and the other end of the output end blocking capacitor 414 is the signal output end of the amplifier. The output impedance transformer constitutes an output impedance matching circuit that matches the output impedance to 50 ohms. The design of the output impedance matching circuit is based on a small signal model implementation of the device.
The graphene radio frequency amplifier is designed based on a small signal model of a device. And adopting an inductor and a microstrip line on the printed circuit board to carry out output and output matching. A1/4 wavelength microstrip line is used as a bias circuit, and a capacitor is used for conducting bypass of the isolation circuit and the bias circuit. The graphene radio frequency amplifier can achieve higher gain and good standing-wave ratio.
Further, as shown in fig. 1, the MOSFET die includes a graphene epitaxially grown silicon carbide substrate 101 and a die body on the substrate. The dotted line area shown in fig. 1 is a mesa, the graphene in the mesa area is double-layer graphene, and the carriers are holes. The front side and the rear side of the mesa region 102 of the silicon carbide substrate are respectively provided with a source 103, and the source 103 and the mesa region are partially overlapped. A gate 106 is provided on the left side of the mesa region 102, and two bars 105 connected thereto and extending rightward are provided on the right side of the gate 106. A drain 104 is provided on the right side of the mesa region 102, and a source bar 107 is provided on the left side of the drain 104, connected thereto, and extending leftward, the source bar 107 being located between two grid bars 105. A layer of Al is arranged between the grid strips 105 and the silicon carbide substrate 2 O 3 As the under-gate oxide of the MOSFET.
In this embodiment, the gate width of the device is 2 microns×15 microns and the gate length is 100 nanometers. And (3) testing the small signal S parameter of the device to obtain a small signal model of the device, wherein the model parameter is shown in table 1:
table 12 ×15 micrometer graphene P channel MOSFET device small signal model parameters
As shown in fig. 2, the lower surface of the substrate 201 of the printed circuit board 2 is provided with a back metal 202 for grounding. A metallized via hole 206 is arranged between the grounding pad 205 positioned on the upper surface of the substrate 201 and the back metal 202, a screw 409 is arranged in the metallized via hole 206, and the grounding pad 205 and the back metal 202 are electrically connected through the screw 409; the bypass capacitor 408 and bond wire 412 connected to the source of the MOSFET die are connected to the ground pad 205. The printed circuit board 2 is further provided with a fixing via 204 for mounting a fixing screw.
Further, the MOSFET die, capacitor and inductor are fixed on the bonding pad 203 on the upper surface of the substrate 201 by conductive adhesive 309 as shown in fig. 3. Curing conditions of the conductive adhesive: at a temperature of 120 DEG C o C to 150 o And C, the time is less than 30 minutes.
Further, as shown in fig. 4, a microwave signal input terminal connector 401 is connected to the signal input terminal of the amplifier, and a microwave signal output terminal connector 402 is connected to the signal output terminal of the amplifier. Further, the amplifier further includes a case 302, and the printed circuit board 2 is fixed in the case 302 by a screw 409 (the screw 409 is fixed to the case 302 after passing through the fixing via 204). The input connector and the output connector are fixed outside the case 302, and the input connector and the output connector are connected to the capacitor through a conversion plug 307. Furthermore, the input end connector and the output end connector are connected with a reserved bonding pad on the printed circuit board through conductive adhesive, and the other end of the reserved bonding pad is connected with the capacitor. In fig. 3, 310 is a bond wire 30 microns in diameter used to bond the gate, source, drain electrodes of the MOSFET die to the pads on the printed circuit board.
The graphene amplifier may be an L-band, S-band or C-band amplifier.
When the graphene amplifier is an L-band amplifier, the input impedance transformer 404 is a copper microstrip line having a length of 1536 microns, a width of 64 microns, and a thickness of 30 microns; the 1/4 wavelength input microstrip 406 and 1/4 wavelength input microstrip 415 are 1480 microns long and 44 microns wide.
FIG. 5 is a graph showing the simulation curves of the gain and reflection coefficient of an L-band graphene RF amplifier, wherein the model shown in Table 1, the microstrip line dimensions shown in FIG. 4, and the component values are put into microwave simulation software, and the electromagnetic field simulation is performed to obtain the gain (S 21 ) Up to 17dB. Input reflectance (S) 11 ) Minimum of-16 dB, output reflectance (S 22 ) Minimum-24 dB. The utility of the invention was confirmed. The curve with the starting point coordinate of 0dB in FIG. 5 is the input reflection coefficient (S 11 ) Is output reflectance (S) 22 ) Is the output reflection coefficient (S) 21 ) Is a curve of (2).
When the graphene amplifier is an S-band amplifier, the input impedance transformer 404 is a copper microstrip line with a length of 710 microns, a width of 50 microns, and a thickness of 30 microns; the 1/4 wavelength input microstrip 406 and the 1/4 wavelength input microstrip 415 are 720 microns long and 30 microns wide.
Referring to fig. 6, fig. 6 is a simulation curve of gain and reflection coefficient of an L-band graphene radio frequency amplifier, and the model shown in table 1, the microstrip line size and the component value shown in fig. 4 are put into microwave simulation software, and electromagnetic field simulation is performed to obtain the gain (S 21 ) Up to 10dB. Input reflectance (S) 11 ) Minimum of-23 dB, output reflectance (S 22 ) Minimum-25 dB. The utility of the invention was confirmed. The curve with the starting point coordinate of 0dB in FIG. 6 is the input reflection coefficient (S 11 ) Is the output reflection coefficient (S) 22 ) Is the output reflection coefficient (S) 21 ) Is a curve of (2).
When the graphene amplifier is a C-band amplifier, the input impedance transformer 404 is a copper microstrip line with a length of 430 microns, a width of 60 microns, and a thickness of 30 microns; the 1/4 wavelength input microstrip 406 and the 1/4 wavelength input microstrip 415 are 420 microns long and 30 microns wide.
Referring to fig. 7, fig. 7 is a graph showing simulation curves of gain and reflection coefficient of a C-band graphene radio frequency amplifier, and the model shown in table one, the microstrip line size shown in fig. 4, and the component values are put into microwave simulation software, and electromagnetic field simulation is performed to obtain the gain of the C-band graphene radio frequency amplifier in the C-band (S 21 ) Up to 6dB. Input reflectance (S) 11 ) Minimum of-12 dB, and output reflection coefficient (S 22 ) Minimum-25 dB. The utility of the invention was confirmed. The curve with the starting point coordinate of-1 dB in FIG. 7 is the input reflection coefficient (S 11 ) Is the output reflection coefficient (S) 22 ) Is the output reflection coefficient (S) 21 ) Is a curve of (2).
Claims (10)
1. A graphene radio frequency amplifier is characterized in that: the high-voltage power amplifier comprises a printed circuit board (2), wherein the circuit board comprises a substrate (201), a graphene P-channel MOSFET tube core (1) is arranged on the upper surface of the substrate (201), one end of an input end blocking capacitor (403) is a signal input end of the amplifier, the other end of the input end blocking capacitor (403) is connected with one end of an input impedance transformer (404), the other end of the input impedance transformer (404) is divided into two paths, a first path is connected with one end of a 1/4 wavelength input microstrip line (406), the other end of the 1/4 wavelength input microstrip line (406) is divided into two paths, the first path is connected with a welding spot (407) of an external grid voltage, and the second path is grounded through a bypass capacitor (408); a second path at the other end of the input impedance converter (404) is connected with a first bonding pad through an input end inductor (405), and the first bonding pad is connected with the grid electrode of the MOSFET die through a bond alloy wire (412); the source electrode of the MOSFET tube core is grounded; the drain electrode of the MOSFET tube core is connected with one end of an output end impedance converter (413), one end of a 1/4 wavelength output microstrip line (415) is connected with one end of the output end impedance converter (413) with a bond alloy wire, the other end of the 1/4 wavelength output microstrip line (415) is divided into two paths, the first path is connected with a welding point (416) with external leakage voltage, and the second path is grounded through a bypass capacitor (408); the other end of the output end impedance converter (413) is connected with one end of an output end blocking capacitor (414), and the other end of the output end blocking capacitor (414) is a signal output end of the amplifier.
2. The graphene radio frequency amplifier according to claim 1, wherein: the lower surface of the substrate (201) is provided with a back metal (202) for grounding, a metallized via hole (206) is arranged between a grounding pad (205) positioned on the upper surface of the substrate (201) and the back metal (202), a screw (409) is arranged in the metallized via hole (206), and the grounding pad (205) is connected with the back metal (202) through the screw (409); the bypass capacitor (408) and a bond wire (412) connected to the source of the MOSFET die are connected to the ground pad (205).
3. The graphene radio frequency amplifier according to claim 1, wherein: the MOSFET die, capacitor and inductor are secured to a bonding pad (203) on the upper surface of the substrate (201) by conductive glue (309).
4. The graphene radio frequency amplifier according to claim 1, wherein: the microwave signal input end connector (401) is connected with the signal input end of the amplifier, and the microwave signal output end connector (402) is connected with the signal output end of the amplifier.
5. The graphene radio frequency amplifier according to claim 4, wherein: the amplifier further comprises a box body (302), the printed circuit board (2) is fixed in the box body (302) through screws (409), the input end connector and the output end connector are fixed outside the box body (302), and the input end connector and the output end connector are connected with the capacitor through a conversion plug (307).
6. The graphene radio frequency amplifier according to claim 1, wherein: the input impedance transformer (404) is a copper microstrip line having a length of 1536 microns, a width of 64 microns, and a thickness of 30 microns; the 1/4 wavelength input microstrip line (406) is 1480 microns long and 44 microns wide with the 1/4 wavelength input microstrip line (415).
7. The graphene radio frequency amplifier according to claim 1, wherein: the input impedance converter (404) is a copper microstrip line with a length of 710 microns, a width of 50 microns and a thickness of 30 microns; the 1/4 wavelength input microstrip line (406) is 720 microns long and 30 microns wide.
8. The graphene radio frequency amplifier according to claim 1, wherein: the input impedance converter (404) is a copper microstrip line with the length of 430 micrometers, the width of 60 micrometers and the thickness of 30 micrometers; the 1/4 wavelength input microstrip line (406) is 420 microns long and 30 microns wide.
9. The graphene radio frequency amplifier according to claim 1, wherein: the MOSFET die comprises a silicon carbide substrate (101) epitaxially grown by graphene and a die body on the substrate, wherein a source electrode (103) is arranged on the front side and the rear side of a mesa area (102) of the silicon carbide substrate respectively, the source electrode (103) is partially overlapped with the mesa area, a grid electrode (106) is arranged on the left side of the mesa area (102), two grid bars (105) connected with the grid electrode and extending rightwards are arranged on the right side of the grid electrode (106), a drain electrode (104) is arranged on the right side of the mesa area (102), a source bar (107) connected with the drain electrode (104) and extending leftwards is arranged on the left side of the drain electrode (104), and the source bar (107) is located between the two grid bars (105).
10. Such as weightThe graphene radio frequency amplifier of claim 9, wherein: a layer of Al is arranged between the grid bars (105) and the silicon carbide substrate 2 O 3 As the under-gate oxide of the MOSFET.
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| CN102683217A (en) * | 2012-05-24 | 2012-09-19 | 中国科学院上海微***与信息技术研究所 | Preparation method of graphite-based double-gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) |
| CN203278782U (en) * | 2013-04-01 | 2013-11-06 | 薛涛 | Drive and protection circuit of high-frequency low-power MOSFET |
| CN105162422A (en) * | 2015-09-07 | 2015-12-16 | 燕山大学 | Single-end-structure low noise amplifier |
| CN207039546U (en) * | 2017-05-31 | 2018-02-23 | 中国电子科技集团公司第十三研究所 | Graphene radio frequency amplifier |
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