CN107195522B - Cluster ion implantation system, large atom group forming method and ultra-shallow junction preparation method - Google Patents
Cluster ion implantation system, large atom group forming method and ultra-shallow junction preparation method Download PDFInfo
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- CN107195522B CN107195522B CN201710515940.8A CN201710515940A CN107195522B CN 107195522 B CN107195522 B CN 107195522B CN 201710515940 A CN201710515940 A CN 201710515940A CN 107195522 B CN107195522 B CN 107195522B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
Abstract
The invention provides a cluster ion implantation system, a large atomic group forming method and an ultra-shallow junction preparation method, wherein the large atomic group forming comprises generating plasma in an ion source generating cavity; part of plasma from the ion source generating cavity enters the target cavity to bombard the target, and target atoms bombarded from the target collide with atoms included in the plasma to generate large atomic groups; the large atomic groups from the target material cavity enter the group enlargement cavity, meanwhile, part of plasma from the ion source generation cavity enters the group enlargement cavity, and electrons included in the plasma collide with the large atomic groups from the target material cavity to charge the large atomic groups, so that the occupation ratio of the charged large atomic groups is increased; and the charged big atomic groups coming out of the group enlarging cavity enter the magnetic field analysis cavity for screening the charge-to-mass ratio, and the charged big atomic groups with the required charge-to-mass ratio are selected. The invention realizes the ionization of large atomic groups and the injection by using the large atomic groups.
Description
Technical Field
The invention relates to the technical field of ion implantation, in particular to a cluster ion implantation system, a large atomic group forming method and an ultra-shallow junction preparation method.
Background
As CMOS devices are changed from planar device structures to three-dimensional device structures, the feature sizes of the devices are smaller and smaller, the operating voltages are lower and lower, and the requirements on the device structures and processes are higher and higher.
Ultra shallow junctions are key to the implementation of advanced CMOS devices. The ultra-shallow junction has special requirements on the ion implantation energy and dose. And when the mass of the ion itself is small, acceleration and control thereof become difficult.
In the conventional injector, the ions are ionized in the form of electrons emitted by a metal filament in a gas or evaporation source, and then are led out from a suction electrode to a magnetic field analysis part to detect the charge-to-mass ratio. This approach makes it difficult to form ionized large atomic groups due to the source of ions and the ionization mechanism.
Disclosure of Invention
To overcome the above problems, the present invention aims to provide a system for cluster ion implantation, thereby increasing the volume of radicals or ion clusters formed.
In order to achieve the above object, the present invention provides a system for cluster ion implantation, comprising:
the ion source generation cavity comprises an ion source, the ion source generates plasma by adopting direct-current high-voltage discharge, the plasma comprises ions, electrons, atoms and molecules, and part of the plasma is led out to the target cavity through a magnetic field;
the plasma generating device comprises an ion source generating cavity, a target cavity and a target material generating cavity, wherein part of plasma from the ion source generating cavity enters the target material cavity through a magnetic field, an electric field is adopted to accelerate and bombard a target material, target material atoms bombarded from the target material collide with atoms included in the plasma, and a large atomic group is generated;
the group enlargement cavity is used for allowing large radicals coming out of the target cavity to enter the group enlargement cavity, meanwhile, part of plasma coming out of the ion source generation cavity enters the group enlargement cavity through a magnetic field, and electrons included in the plasma spirally move in the group enlargement cavity to impact the large radicals coming out of the target cavity to enable the large radicals to be charged, so that the occupation ratio of the charged large radicals is increased;
and the charged large atomic groups from the group increasing cavity enter the magnetic field analysis cavity for charge-mass ratio screening, and the charged large atomic groups with the required charge-mass ratio are selected.
Preferably, the target is placed obliquely or in an inner conical shape.
In order to achieve the above object, the present invention also provides a method for forming a macroatomic group, comprising the steps of:
step 01: an ion source generating cavity comprising an ion source generates plasma by adopting direct-current high-voltage discharge, the plasma comprises ions, electrons, atoms and molecules, and part of the plasma is led out to a target material cavity through a magnetic field;
step 03: the large atomic groups from the target cavity enter the group enlargement cavity, meanwhile, part of plasma from the ion source generation cavity enters the group enlargement cavity through the magnetic field, and electrons included in the plasma spirally move in the group enlargement cavity to impact the large atomic groups from the target cavity to charge the large atomic groups, so that the occupation ratio of the charged large atomic groups is increased;
step 04: and the charged big atomic groups coming out of the group enlarging cavity enter the magnetic field analysis cavity for screening the charge-to-mass ratio, and the charged big atomic groups with the required charge-to-mass ratio are selected.
In order to achieve the above object, the present invention further provides a method for preparing an ultra-shallow junction, comprising:
step 01: an ion source generating cavity comprising an ion source generates plasma by adopting direct-current high-voltage discharge, the plasma comprises ions, electrons, atoms and molecules, and part of the plasma is led out to a target material cavity through a magnetic field;
step 02: part of plasma from the ion source generating cavity enters the target cavity through the magnetic field, the target is accelerated and bombarded by adopting the electric field, target atoms bombarded from the target collide with atoms included in the plasma, and large atomic groups are generated;
step 03: the large atomic groups from the target cavity enter the group enlargement cavity, meanwhile, part of plasma from the ion source generation cavity enters the group enlargement cavity through the magnetic field, and electrons included in the plasma spirally move in the group enlargement cavity to impact the large atomic groups from the target cavity to charge the large atomic groups, so that the occupation ratio of the charged large atomic groups is increased;
step 04: the charged big atomic groups coming out of the group enlarging cavity enter a magnetic field analysis cavity for screening the charge-to-mass ratio, and the charged big atomic groups with the required charge-to-mass ratio are selected;
step 05: and accelerating the charged large radicals screened from the magnetic field analysis cavity, and injecting the accelerated charged large radicals into the wafer to form an ultra-shallow junction.
The cluster ion injection system of the invention utilizes a single cavity to generate plasma, wherein the plasma comprises ions, electrons, atoms and molecules, and passes through a magnetic field, part of the plasma is introduced into a target material cavity, the material to be injected is placed in a certain angle in the cavity and is bombarded by the plasma, target material atoms are knocked out from the material and collide with atoms included by the plasma, thus the occupation ratio of large atomic groups is increased, the electrons included by the plasma do spiral motion in the magnetic field to knock the large atomic groups coming out of the target material cavity to charge the large atomic groups, the large atomic groups are ionized, finally, the ionized large atomic groups are extracted by a pole-attracting voltage and a correct cluster ion injection source is selected by the magnetic field, thus the injection of the ionized large atomic groups and the large atomic groups is realized.
Drawings
FIG. 1 is a block diagram of a system for cluster ion implantation according to a preferred embodiment of the present invention
FIG. 2 is a flow chart of a method for forming a macro-atomic group according to a preferred embodiment of the present invention
FIG. 3 is a flow chart illustrating a method for fabricating ultra-shallow junctions according to a preferred embodiment of the present invention
Detailed Description
In order to make the contents of the present invention more comprehensible, the present invention is further described below with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
The present invention will be described in further detail with reference to examples 1 to 3. It should be noted that the drawings are in a simplified form and are not to precise scale, and are only used for conveniently and clearly achieving the purpose of assisting in describing the embodiment.
Referring to fig. 1, a cluster ion implantation system of the present embodiment includes:
the ion source generating cavity comprises an ion source, the ion source generates plasma by adopting direct-current high-voltage discharge, the plasma comprises ions, electrons, atoms and molecules, and part of the plasma is led out to the target cavity through a magnetic field.
The plasma generating device comprises an ion source generating cavity, a target cavity and a target material generating cavity, wherein part of plasma from the ion source generating cavity enters the target material cavity through a magnetic field, an electric field is adopted to accelerate and bombard a target material, target material atoms bombarded from the target material collide with atoms included in the plasma, and a large atomic group is generated; in the target material cavity, the target material is bombarded by accelerating ions by using an electric field, and the formed large atomic groups are pumped into the group enlarging cavity by the electric field or the group. For efficient bombardment out of atomic groups, molecules, etc., the target may be placed here obliquely or in an inner cone shape.
The group enlargement cavity is used for allowing large radicals coming out of the target cavity to enter the group enlargement cavity, part of plasma coming out of the ion source generation cavity enters the group enlargement cavity through a magnetic field, and electrons included in the plasma do spiral motion in the group enlargement cavity to impact the large radicals coming out of the target cavity to enable the large radicals to be charged, so that the occupation ratio of the charged large radicals is increased. In order to form effective impact, in the implementation, part of ions from the ion source generation cavity perform spiral motion in the radical enlargement cavity to impact large radicals from the target cavity to charge the large radicals.
And the charged big atomic groups coming out of the group increasing cavity can enter the magnetic field analysis cavity through a magnetic field to carry out charge-to-mass ratio screening, and the charged big atomic groups with the required charge-to-mass ratio are selected.
The embodiment may further include an acceleration chamber for accelerating the charged macro-atomic groups screened from the magnetic field analysis chamber.
In addition, the present embodiment further provides a method for forming a large atomic group, referring to fig. 2, the cluster ion implantation system of the present embodiment includes the following steps:
step 01: an ion source generating cavity comprising an ion source generates plasma by adopting direct-current high-voltage discharge, the plasma comprises ions, electrons, atoms and molecules, and part of the plasma is led out to a target material cavity through a magnetic field;
specifically, direct-current high-voltage discharge is adopted to generate plasma, and part of the plasma is led out to the target cavity through a magnetic field.
Step 02: part of plasma from the ion source generating cavity enters the target cavity through the magnetic field, the target is accelerated and bombarded by adopting the electric field, target atoms bombarded from the target collide with atoms included in the plasma, and large atomic groups are generated;
specifically, the target material is bombarded by adopting electric field accelerated ions, and the formed large atomic groups are pumped to a group enlarging cavity through an electric field or the like.
Step 03: the large atomic groups from the target cavity enter the group enlargement cavity, meanwhile, part of plasma from the ion source generation cavity enters the group enlargement cavity through the magnetic field, and electrons included in the plasma spirally move in the group enlargement cavity to impact the large atomic groups from the target cavity to charge the large atomic groups, so that the occupation ratio of the charged large atomic groups is increased;
specifically, part of plasma from the ion source generating cavity is led out to the radical increasing cavity through the magnetic field. In order to effectively impact the large radicals to charge them, in this embodiment, a portion of the plasma from the ion source generation chamber includes electrons that spiral in the radical enlargement chamber to impact the large radicals from the target chamber to charge them.
Step 04: and the charged big atomic groups coming out of the group enlarging cavity enter the magnetic field analysis cavity for screening the charge-to-mass ratio, and the charged big atomic groups with the required charge-to-mass ratio are selected.
Specifically, the charged large radicals coming out of the radical amplification cavity enter the magnetic field analysis cavity through the magnetic field.
After the step 04, a step 05 may be further included: and accelerating the charged large radicals screened from the magnetic field analysis cavity.
In this embodiment, the cluster ion implantation system of this embodiment may be further utilized to prepare an ultra-shallow junction, referring to fig. 3, which specifically includes the following steps:
step 01: an ion source generating cavity comprising an ion source generates plasma by adopting direct-current high-voltage discharge, the plasma comprises ions, electrons, atoms and molecules, and part of the plasma is led out to a target material cavity through a magnetic field;
specifically, direct-current high-voltage discharge is adopted to generate plasma, and part of the plasma is led out to the target cavity through a magnetic field.
Step 02: part of plasma from the ion source generating cavity enters the target cavity through the magnetic field, the target is accelerated and bombarded by adopting the electric field, target atoms bombarded from the target collide with atoms included in the plasma, and large atomic groups are generated;
specifically, the target material is bombarded by adopting electric field accelerated ions, and the formed large atomic groups are pumped to a group enlarging cavity through an electric field or the like.
Step 03: the large atomic groups from the target cavity enter the group enlargement cavity, meanwhile, part of plasma from the ion source generation cavity enters the group enlargement cavity through the magnetic field, and electrons included in the plasma spirally move in the group enlargement cavity to impact the large atomic groups from the target cavity to charge the large atomic groups, so that the occupation ratio of the charged large atomic groups is increased;
specifically, part of plasma from the ion source generating cavity is led out to the radical increasing cavity through the magnetic field. In order to effectively impact the large radicals to charge them, in this embodiment, a portion of the plasma from the ion source generation chamber includes electrons that spiral in the radical enlargement chamber to impact the large radicals from the target chamber to charge them.
Step 04: the charged big atomic groups coming out of the group enlarging cavity enter a magnetic field analysis cavity for screening the charge-to-mass ratio, and the charged big atomic groups with the required charge-to-mass ratio are selected;
specifically, the charged large radicals coming out of the radical amplification cavity enter the magnetic field analysis cavity through the magnetic field.
Step 05: and accelerating the charged large radicals screened from the magnetic field analysis cavity, and injecting the accelerated charged large radicals into the wafer to form an ultra-shallow junction.
Although the present invention has been described with reference to preferred embodiments, it is to be understood that the present invention is not limited to the disclosed embodiments, but rather, may be embodied in many different forms and modifications without departing from the spirit and scope of the present invention as defined by the appended claims.
Claims (4)
1. A system for cluster ion implantation, comprising:
the ion source generation cavity comprises an ion source, the ion source generates plasma by adopting direct-current high-voltage discharge, the plasma comprises ions, electrons, atoms and molecules, and part of the plasma is led out to the target cavity through a magnetic field;
the plasma generating device comprises an ion source generating cavity, a target cavity and a target material generating cavity, wherein part of plasma from the ion source generating cavity enters the target material cavity through a magnetic field, an electric field is adopted to accelerate and bombard a target material, target material atoms bombarded from the target material collide with atoms included in the plasma, and a large atomic group is generated;
the group enlargement cavity is used for allowing large radicals coming out of the target cavity to enter the group enlargement cavity, meanwhile, part of plasma coming out of the ion source generation cavity enters the group enlargement cavity through a magnetic field, and electrons included in the plasma spirally move in the group enlargement cavity to impact the large radicals coming out of the target cavity to enable the large radicals to be charged, so that the occupation ratio of the charged large radicals is increased;
and the charged large atomic groups from the group increasing cavity enter the magnetic field analysis cavity for charge-mass ratio screening, and the charged large atomic groups with the required charge-mass ratio are selected.
2. The system of claim 1, wherein the target is placed at an angle or in an internal cone.
3. A method for forming a macroatomic group, comprising the steps of:
step 01: an ion source generating cavity comprising an ion source generates plasma by adopting direct-current high-voltage discharge, the plasma comprises ions, electrons, atoms and molecules, and part of the plasma is led out to a target material cavity through a magnetic field;
step 02, allowing part of plasma from an ion source generating cavity to enter a target cavity through a magnetic field, accelerating and bombarding a target by adopting an electric field, and allowing target atoms bombarded from the target to collide with atoms included in the plasma to generate large atomic groups;
step 03: the large atomic groups from the target cavity enter the group enlargement cavity, meanwhile, part of plasma from the ion source generation cavity enters the group enlargement cavity through the magnetic field, and electrons included in the plasma spirally move in the group enlargement cavity to impact the large atomic groups from the target cavity to charge the large atomic groups, so that the occupation ratio of the charged large atomic groups is increased;
step 04: and the charged big atomic groups coming out of the group enlarging cavity enter the magnetic field analysis cavity for screening the charge-to-mass ratio, and the charged big atomic groups with the required charge-to-mass ratio are selected.
4. A method for preparing an ultra-shallow junction is characterized by comprising the following steps:
step 01: an ion source generating cavity comprising an ion source generates plasma by adopting direct-current high-voltage discharge, the plasma comprises ions, electrons, atoms and molecules, and part of the plasma is led out to a target material cavity through a magnetic field;
step 02: part of plasma from the ion source generating cavity enters the target cavity through the magnetic field, the target is accelerated and bombarded by adopting the electric field, target atoms bombarded from the target collide with atoms included in the plasma, and large atomic groups are generated;
step 03: the large atomic groups from the target cavity enter the group enlargement cavity, meanwhile, part of plasma from the ion source generation cavity enters the group enlargement cavity through the magnetic field, and electrons included in the plasma spirally move in the group enlargement cavity to impact the large atomic groups from the target cavity to charge the large atomic groups, so that the occupation ratio of the charged large atomic groups is increased;
step 04: the charged big atomic groups coming out of the group enlarging cavity enter a magnetic field analysis cavity for screening the charge-to-mass ratio, and the charged big atomic groups with the required charge-to-mass ratio are selected;
step 05: and accelerating the charged large radicals screened from the magnetic field analysis cavity, and injecting the accelerated charged large radicals into the wafer to form an ultra-shallow junction.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710515940.8A CN107195522B (en) | 2017-06-29 | 2017-06-29 | Cluster ion implantation system, large atom group forming method and ultra-shallow junction preparation method |
| US16/620,859 US11120970B2 (en) | 2017-06-16 | 2017-06-30 | Ion implantation system |
| PCT/CN2017/091084 WO2018227668A1 (en) | 2017-06-16 | 2017-06-30 | Ion implantation system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710515940.8A CN107195522B (en) | 2017-06-29 | 2017-06-29 | Cluster ion implantation system, large atom group forming method and ultra-shallow junction preparation method |
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| CN107195522A CN107195522A (en) | 2017-09-22 |
| CN107195522B true CN107195522B (en) | 2021-04-30 |
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Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7838842B2 (en) * | 1999-12-13 | 2010-11-23 | Semequip, Inc. | Dual mode ion source for ion implantation |
| US20080242066A1 (en) * | 2004-10-22 | 2008-10-02 | Semiequip Inc. | Method Of Manufacturing Semiconductor |
| JP2008522429A (en) * | 2004-12-03 | 2008-06-26 | エピオン コーポレーション | Formation of ultra-shallow junction by gas cluster ion irradiation |
| US8344337B2 (en) * | 2010-04-21 | 2013-01-01 | Axcelis Technologies, Inc. | Silaborane implantation processes |
| CN104282526A (en) * | 2013-07-11 | 2015-01-14 | 中国科学院大连化学物理研究所 | Magnetron sputtering cluster ion source used for flight time mass spectrum |
| US9218941B2 (en) * | 2014-01-15 | 2015-12-22 | Axcelis Technologies, Inc. | Ion implantation system and method with variable energy control |
| CN106048533B (en) * | 2016-06-27 | 2019-01-15 | 内蒙古大学 | A kind of preparation method of SmCo alloy magnetostriction film |
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