CN107194345A - Electronic equipment, ultrasonic fingerprint identifying device and its manufacture method - Google Patents
Electronic equipment, ultrasonic fingerprint identifying device and its manufacture method Download PDFInfo
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- CN107194345A CN107194345A CN201710351818.1A CN201710351818A CN107194345A CN 107194345 A CN107194345 A CN 107194345A CN 201710351818 A CN201710351818 A CN 201710351818A CN 107194345 A CN107194345 A CN 107194345A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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Abstract
The embodiment of the present application provides a kind of electronic equipment, ultrasonic fingerprint identifying device and its manufacture method, and this method includes：Horizontal distribution and the first piezoelectric layer and the second piezoelectric layer that are isolated from each other are formed at the top of basalis；First piezoelectric layer has specific piezoelectric strain constant, and the second piezoelectric layer has specific piezoelectric voltage constant；The first plane electrode is formed at the top of the first piezoelectric layer and the second piezoelectric layer；Resonance chamber is formed on the base layer, and forms the second plane electrode and the 3rd plane electrode of isolation insulated from each other in resonance chamber, to form the first device；First plane electrode, the first piezoelectric layer and the second plane electrode are used to realize that ultrasonic wave is launched, and the first plane electrode, the second piezoelectric layer and the 3rd plane electrode are used to realize that ultrasonic wave is received；First device and the progress of the semiconductor devices of cooperation is integrated, to form ultrasonic fingerprint identifying device.The embodiment of the present application can improve circuit efficiency and the identification sensitivity of ultrasonic fingerprint identifying device.
Description
Technical field
The application is related to ultrasonic fingerprint identification technology field, knows more particularly, to a kind of electronic equipment, ultrasonic fingerprint
Other device and its manufacture method.
Background technology
In ultrasonic fingerprint identification technology, the major function of ultrasonic fingerprint identifying device is to be converted into pumping signal
Ultrasonic wave and towards the direction directional transmissions of vertical fingerprint, while receiving the ultrasonic wave that fingerprint is reflected back, and is translated into corresponding
Electric signal.Therefore, the design of ultrasonic fingerprint identifying device is very crucial.
In the design of ultrasonic fingerprint identifying device, the preparation of piezoelectric is equally a key point.It is selected at present
Piezoelectric is generally AlN, lead titanate piezoelectric ceramics (piezoelectric ceramic transducer, abbreviation
) or organic piezoelectric materials polyvinyl fluoride (PVF) etc. PZT.Comparatively, PZT has good transmitting efficiency (i.e. with good
Piezo-electric effect), but PZT receiving efficiency (i.e. with good inverse piezoelectric effect) is smaller.And the material such as AlN and PVF has more
Good receiving efficiency, but transmitting efficiency is not so good as PZT.
However, in ultrasonic fingerprint identification technology, ultrasonic fingerprint identifying device is then needed while having transmission and connecing
Receive function.Therefore, the scheme of the ultrasonic fingerprint identifying device of individually a kind of piezoelectric is used at present, tends to cause
Circuit efficiency (circuit efficiency=transmitting efficiency × receiving efficiency) is relatively low, so as to constrain the identification of ultrasonic fingerprint identifying device
Sensitivity.
The content of the invention
The purpose of the embodiment of the present application is to provide a kind of electronic equipment, ultrasonic fingerprint identifying device and its manufacturer
Method, to improve the circuit efficiency of ultrasonic fingerprint identifying device, so as to improve the identification sensitivity of ultrasonic fingerprint identifying device.
To reach above-mentioned purpose, on the one hand, the embodiment of the present application provides a kind of manufacture of ultrasonic fingerprint identifying device
Method, including：
Horizontal distribution and the first piezoelectric layer and the second piezoelectric layer that are isolated from each other are formed at the top of basalis；First pressure
Electric layer has specific piezoelectric strain constant, and second piezoelectric layer has specific piezoelectric voltage constant；
The first plane electrode is formed at the top of first piezoelectric layer and second piezoelectric layer；
Resonance chamber is formed on the basalis, and forms in the resonance chamber the second flat of isolation insulated from each other
Face electrode and the 3rd plane electrode, to form the first device；First plane electrode, first piezoelectric layer and described second
Plane electrode is used to realize that ultrasonic wave is launched, first plane electrode, second piezoelectric layer and the 3rd plane electrode
For realizing that ultrasonic wave is received；
First device and the progress of the semiconductor devices of cooperation is integrated, to form ultrasonic fingerprint identifying device.
It is preferred that, isolated between first piezoelectric layer and second piezoelectric layer by a gap.
It is preferred that, it is deposited with isolating bar in the gap.
It is preferred that, first piezoelectric layer and the second piezoelectric layer mirror are symmetrical, and first piezoelectric layer and described
Area at the top of second piezoelectric layer covering basalis is not less than designated value.
It is preferred that, forming the technique of first piezoelectric layer and second piezoelectric layer includes depositing technics.
It is preferred that, forming the technique of first plane electrode includes depositing technics.
It is preferred that, it is described to form resonance chamber on the base layer, and form in the resonance chamber isolation insulated from each other
The second plane electrode and the 3rd plane electrode, including：
Structure vertical upset obtained by being formed after first plane electrode；
The graphical basalis, to form resonance chamber；
Conductive layer is formed in the resonance chamber；
The graphical conductive layer, to form the second plane electrode and the 3rd plane electrode of isolation insulated from each other；It is described
Second plane electrode is used to be electrically connected with the emission electrode of the semiconductor devices；3rd plane electrode be used for it is described
The receiving electrode of semiconductor devices is electrically connected with.
It is preferred that, the integrated technique includes wafer bonding technique.
It is preferred that, in addition to：
Passivation protection layer is formed at the top of first plane electrode.
It is preferred that, it is described graphically to be realized by etching technics.
On the other hand, the embodiment of the present application provides a kind of ultrasonic fingerprint identifying device manufactured by the above method.
Another further aspect, the embodiment of the present application provides a kind of electronic equipment for being configured with above-mentioned ultrasonic fingerprint identifying device.
It is preferred that, the electronic equipment includes mobile terminal.
Another further aspect, the embodiment of the present application provides a kind of computer-readable storage medium, is stored thereon with computer program, described
Following steps are realized when computer program is executed by processor：
Horizontal distribution and the first piezoelectric layer and the second piezoelectric layer that are isolated from each other are formed at the top of basalis；First pressure
Electric layer has specific piezoelectric strain constant, and second piezoelectric layer has specific piezoelectric voltage constant；
The first plane electrode is formed at the top of first piezoelectric layer and second piezoelectric layer；
Resonance chamber is formed on the basalis, and forms in the resonance chamber the second flat of isolation insulated from each other
Face electrode and the 3rd plane electrode, to form the first device；First plane electrode, first piezoelectric layer and described second
Plane electrode is used to realize that ultrasonic wave is launched, first plane electrode, second piezoelectric layer and the 3rd plane electrode
For realizing that ultrasonic wave is received；
First device and the progress of the semiconductor devices of cooperation is integrated, to form ultrasonic fingerprint identifying device.
The ultrasonic fingerprint identifying device of the embodiment of the present application includes the first plane electrode of an all standing, and two
Individual half mulching and the second plane electrode and the 3rd plane electrode of isolation insulated from each other, the first plane electrode and the second plane electrode
Between be provided with specific piezoelectric strain constant the first piezoelectric layer, between the first plane electrode and the 3rd plane electrode be provided with specific pressure
Second piezoelectric layer of piezoelectric voltage constant；First plane electrode, the first piezoelectric layer and the second plane electrode are used to realize that ultrasonic wave is sent out
Penetrate, the first plane electrode, the second piezoelectric layer and the 3rd plane electrode are used to realize that ultrasonic wave is received.Because the first piezoelectric layer has
Specific piezoelectric strain constant, when realizing ultrasonic wave transmitting, can improve ultrasonic wave emission effciency；Because the second piezoelectric layer has
Specific piezoelectric voltage constant, when realizing that ultrasonic wave is received, can improve ultrasonic wave receiving efficiency, thus the embodiment of the present application
Ultrasonic fingerprint identifying device can have higher circuit efficiency, so as to be conducive to improving the sensitive of ultrasonic fingerprint identifying device
Degree.
Brief description of the drawings
, below will be to embodiment or existing in order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in application, for those of ordinary skill in the art, are not paying the premise of creative labor
Under, other accompanying drawings can also be obtained according to these accompanying drawings.In the accompanying drawings：
Fig. 1 is the manufacture method flow chart of ultrasonic fingerprint identifying device in the embodiment of the application one；
The structural representation for the substrate that Fig. 2 is provided by the embodiment of the application one；
Fig. 3 is the structural representation that the embodiment of the application one is formed at the top of basalis after the first piezoelectric layer；
Fig. 4 is the structural representation that the embodiment of the application one is formed at the top of basalis after the second piezoelectric layer；
Fig. 5 is the knot after gap deposit isolating bar of the embodiment of the application one between the first piezoelectric layer and the second piezoelectric layer
Structure schematic diagram；
Fig. 6 is the knot after the embodiment of the application one forms the first plane electrode at the top of the first piezoelectric layer and the second piezoelectric layer
Structure schematic diagram；
Fig. 7 is the structural representation that the embodiment of the application one is formed at the top of the first plane electrode after passivation protection layer；
Fig. 8 is the structural representation formed after the structure vertical shown in Fig. 7 is overturn and is patterned to substrate；
Fig. 9 is the structural representation that the embodiment of the application one is formed after structure shown in Fig. 8 is deposited；
Figure 10 is that the structure that the embodiment of the application one is formed after the conductive layer in structure shown in Fig. 9 is patterned is shown
It is intended to；
Figure 11 is that the embodiment of the application one is overturn and integrated with the semiconductor devices of cooperation by structure vertical shown in Figure 10
The structural representation of the ultrasonic fingerprint identifying device formed afterwards；
Figure 12 is the structural representation of the electronic equipment of the embodiment of the application one.
Embodiment
In order that those skilled in the art more fully understand the technical scheme in the application, it is real below in conjunction with the application
The accompanying drawing in example is applied, the technical scheme in the embodiment of the present application is clearly and completely described, it is clear that described implementation
Example only some embodiments of the present application, rather than whole embodiments.Based on the embodiment in the application, this area is common
The every other embodiment that technical staff is obtained under the premise of creative work is not made, should all belong to the application protection
Scope.
Based on the embodiment in the application, those of ordinary skill in the art are obtained under the premise of creative work is not made
The every other embodiment obtained, should all belong to the scope of the application protection.For example in being described below, above first component
Second component is formed, the embodiment that first component and second component are formed with the direct way of contact can be included, can also be included
First component and second component (can also include extra portion in non-direct contact mode i.e. between first component and second component
Part) embodiment etc. that is formed.
Moreover, for the ease of description, some embodiments of the application can use such as " in ... top ", " ... under ",
The space relative terms such as " top ", " lower section ", to describe such as embodiment each an element or part shown in the drawings and another
The relation of (or other) between element or part.It should be appreciated that in addition to the orientation described in accompanying drawing, space is relative
Term also aims to the different azimuth including device in use or operation.If the device in such as accompanying drawing is reversed, it is described
For " " other elements or part " lower section " or " under " element or part, will then be positioned as " " other elements or portion
Part " top " or " on ".
In addition, unless context is expressly otherwise indicated, " one " that the following embodiments of the application are used, " one ", "the",
" described " etc. seems the term of singulative, can also include plural form.It should also be noted that, the following embodiments of the application
The term " comprising " that uses, "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, it is intended that specify described
The presence of feature, entirety, step, operation, element, part etc., but it is not excluded for other one or more features, entirety, step, behaviour
The presence or addition of work, element, part etc..
Although operations described below flow includes the multiple operations occurred with particular order, it should however be appreciated that understand,
Each operating process is in the way of helping to understand embodiment described herein, to be described as multiple separate operations successively
's.However, the order of description is not necessarily to be construed as implying that these operations must be order dependent.Specifically, these are operated
More or less operations may not necessarily can also be included with the sequentially executed of presentation, such as these processes.
With reference to shown in Fig. 1, the manufacture method of the ultrasonic fingerprint identifying device of the embodiment of the present application can include following step
Suddenly：
S101, formation horizontal distribution and the first piezoelectric layer and the second piezoelectric layer that are isolated from each other at the top of basalis；It is described
First piezoelectric layer has specific piezoelectric strain constant, and second piezoelectric layer has specific piezoelectric voltage constant.
In the application some embodiments, as shown in Fig. 2 the basalis 101 can be used as manufacture ultrasonic fingerprint identification
The base material of device, while bottom support can also be played a part of.
, as shown in Figure 3 and Figure 4, can be by depositing technics respectively in the basalis 101 in the application some embodiments
First piezoelectric layer 102 of the left part formation with specific piezoelectric strain constant at top, and at the top of basalis 101
Second piezoelectric layer 102 ' of the right part formation with specific piezoelectric voltage constant, wherein, first piezoelectric layer 102 and second
The mirror of piezoelectric layer 102 ' is symmetrical and be isolated from each other (such as shown in Fig. 4, the piezoelectric layer 102 ' of the first piezoelectric layer 102 and second it
Between realized by the gap that can reserve isolate).It is described to advantageously ensure that the induction zone area of ultrasonic fingerprint identifying device
First piezoelectric layer 102 and second piezoelectric layer 102 ' answer the area at the top of covering basalis 101 as much as possible, typically may not be used
Less than one designated value (such as area coverage can be not less than the 99% of the topside area of basalis 101).
In the application other embodiment, as shown in figure 5, in order to further enhance isolation effect, deposit can also be passed through
Technique forms isolating bar 103 in the gap between the piezoelectric layer 102 ' of the first piezoelectric layer 102 and second.
In the application some embodiments, the material of the isolating bar 103 for example can be silica, silicon nitride, carbonization
Silicon, silicon oxynitride, low k dielectric, other suitable materials or their combination.
In the application some embodiments, the material of the basalis 101 for example can be monocrystalline silicon, polysilicon or non-
The silicon of crystalline structure or the elemental semiconductorses of germanium.In the application other embodiments, the material of the basalis 101
Can be the compound semiconductor materials such as carborundum, GaAs, gallium phosphide, indium phosphide, indium arsenide, in some other reality of the application
Apply in example, the material of the basalis 101 can also be the alloy semiconductor materials such as SiGe or GaAsP.
In the application some exemplary embodiments, the depositing technics as needed for example can be chemical vapor deposition
(CVD), physical vapor deposition (PVD), plating, evaporate (such as molecular beam epitaxy) or spin coating etc..In addition, mentioned below form sediment
Product or depositing technics can also refer to the description of this part, in order to avoid repeat.
It is described that there is specific piezoelectric strain constant to refer to first piezoelectric layer 102 in the application some embodiments
Piezoelectric strain constant can be with larger (specifically, its piezoelectric strain constant can be not less than a specified threshold), to improve ultrasonic wave
The emission effciency of fingerprint identification device.In view of this, in the application some exemplary embodiments, first piezoelectric layer 102
PZT etc., which may be selected, has the piezoelectric of larger piezoelectric strain constant.
It is described that there is specific piezoelectric voltage constant to refer to second piezoelectric layer 102 ' in the application some embodiments
Piezoelectric voltage constant can be with larger (specifically, its piezoelectric voltage constant can be not less than a given threshold), to improve ultrasonic wave
The receiving efficiency of fingerprint identification device.In view of this, in the application some exemplary embodiments, second piezoelectric layer 102 '
AlN etc., which may be selected, has the piezoelectric of larger piezoelectric voltage constant.
S102, the first plane electrode of top formation in first piezoelectric layer and second piezoelectric layer.
In the application some embodiments, as shown in fig. 6, can be by depositing technics in first piezoelectric layer 102 and institute
First plane electrode 104 is formed on the top for stating the second piezoelectric layer 102 '.
In the application some embodiments, the material of first plane electrode 104 can be such as metal, metal silication
The conductive materials such as thing, metal nitride, metal oxide or conductive carbon.In the application some exemplary embodiments, described
The material of one plane electrode 104 is specifically as follows Al, Cu, Ag, Au, Ni, Co, TiAl, TiN or TaN etc..
In the application some embodiments, as shown in fig. 7, can also form blunt at the top of the first plane electrode 104
Change protective layer 105.In the application some exemplary embodiments, 105 material of the passivation protection layer for example can for silica,
Silicon nitride, carborundum, silicon oxynitride, low k dielectric, other suitable materials or their combination.
S103, resonance chamber is formed on the basalis, and form in the resonance chamber isolation insulated from each other
Second plane electrode and the 3rd plane electrode, to form the first device；First plane electrode, first piezoelectric layer and institute
Stating the second plane electrode is used to realize that ultrasonic wave is launched, first plane electrode, second piezoelectric layer and described 3rd flat
Face electrode is used to realize that ultrasonic wave is received.
In the application some embodiments, the ultrasonic wave, which is received, refers to that receiving the ultrasonic wave launched is running into barrier
The back wave that (such as finger) is reflected.
It is described to form resonance chamber, and the shape in the resonance chamber on the base layer in the application some embodiments
The second plane electrode and the 3rd plane electrode into isolation insulated from each other may comprise steps of：
First, the structure vertical obtained by being formed after first plane electrode is overturn.
Secondly, the graphical basalis 101, to form resonance chamber 106, as shown in Figure 8.
Then, conductive layer 107 is formed in the resonance chamber 106, as shown in Figure 9.
Secondly, the graphical conductive layer 107, flat with the second plane electrode 108 and the 3rd for forming isolation insulated from each other
Face electrode 108 ', as shown in Figure 10.Wherein, second plane electrode 108 is used for the semiconductor coordinated with first device
The emission electrode of device is electrically connected with；The electrode of 3rd plane 108 ' is for electrical with the receiving electrode of the semiconductor devices
Connection.
For the ease of understanding the application, the principle and its effect to the embodiment of the present application are further explained explanation below：
For ultrasonic wave transmitting, it is assumed that ETXFor the transmitting efficiency of ultrasonic element, VTXFor drive voltage amplitude, UTXFor production
Raw amplitude of ultrasonic；Then have：ETX=UTX/VTX。
In the case where ignoring the decay factor of ultrasonic wave path (because for different schemes, this decay factor is usually
Steady state value), received for the ultrasonic wave of return, it is assumed that ERXFor the receiving efficiency of ultrasonic element, VRXTo receive signal amplitude；
Then have：ERX=VRX/UTX。
The circuit efficiency E of ultrasonic elementLOOPIt can be defined as：ELOOP=VRX/VTX=ETX*ERX。
Exemplified by using PZT and AlN as the ultrasonic element of single piezoelectric, its transmitting efficiency and receiving efficiency pair
It should be：
ETX_PZT=5*ETX_NORM, ERX_PZT=ERX_NORM；
ETX_AlN=ETX_NORM, ERX_AlN=10*ERX_NORM；
Wherein, ETX_NORMFor transmitting efficiency normalized value, ERX_NORMReceiving efficiency normalized value.
Because normalization circuit efficiency is ELOOP_NORM=ETX_NORM*ERX_NORM, then：
If using the ultrasonic element using PZT as single piezoelectric, its circuit efficiency is 5 times of normalization loop
Efficiency：ELOOP_PZT=ETX_PZT*ERX_PZT=5*ELOOP_NORM；
And if using the ultrasonic element using AlN as single piezoelectric, then its circuit efficiency is 10 times of normalization
Circuit efficiency：ELOOP_AlN=ETX_AlN*ERX_AlN=10*ELOOP_NORM；
And the embodiment of the present application is used by first plane electrode 104, first piezoelectric layer 102 and described second flat
Face electrode 108 is used to realize that ultrasonic wave is launched.I.e. in transmitting, second plane electrode 108 can be accessed DC level, will
The incoming transport drive signal of first plane electrode 104, first piezoelectric layer 102 turns as by the alternating current drive signal
The emission layer of ultrasonic wave is turned to, and the 3rd plane electrode 108 ' and second piezoelectric layer 102 ' are then not involved in realizing ultrasound
Ripple launch, specifically can by selectivity will the 3rd plane electrode 108 ' corresponding with second piezoelectric layer 102 ' vacantly come reality
It is existing.Then now the ultrasonic wave transmitting efficiency of ultrasonic element is：
ETX_OUR=ETX_PZT_OUR=2.5*ETX_NORM；
And the embodiment of the present application is used by first plane electrode 104, second piezoelectric layer 102 ' and the described 3rd
Plane electrode 108 ' is used to realize that ultrasonic wave is received.I.e. when receiving, second piezoelectric layer 102 ' is as receiving layer, using inverse
It is voltage signal, first plane electrode 104 and the 3rd plane electricity that piezo-electric effect, which will reflect back into the Ultrasonic transformation come,
Pole 108 ' is used for the voltage signal for gathering the receiving layer output., for example can be by described in the application exemplary embodiment
One plane electrode 104 accesses DC level, and the 3rd plane electrode 108 ' is connected into receiving electrode (i.e. with first device
With the receiving electrode of the semiconductor devices of cooperation)；And second piezoelectric layer 102 and second plane electrode 108 are not joined then
With realizing that ultrasonic wave is received, specifically by described it can state that the second plane electrode 10 is hanging or access DC level comes in fact by selectivity
It is existing.Then now ultrasonic element ultrasonic wave receiving efficiency is：
ERX_OUR=ERX_AlN_OUR=5*ERX_NORM；
In the case, the normalization circuit efficiency of the ultrasonic fingerprint identifying device of the embodiment of the present application is：
ELOOP_OUR=ETX_OUR*ERX_OUR=12.5*ELOOP_NORM。
As can be seen here, the circuit efficiency of the ultrasonic fingerprint identifying device of the embodiment of the present application, which is greater than, uses homogenous material
As the circuit efficiency of ultrasonic element, so as to improve the identification sensitivity of ultrasonic fingerprint identifying device, it is embodied in
Make ultrasonic fingerprint identifying device that there is stronger medium penetration power and more preferable fingerprint imaging ability.
S104, by first device and coordinate semiconductor devices carry out it is integrated, with formed ultrasonic fingerprint identification dress
Put.
, as shown in figure 11, can be using any suitable integrated techniques such as wafer bondings in the application some embodiments
By first device 10 and coordinate semiconductor devices 20 carry out it is integrated, so as to form ultrasonic fingerprint identifying device.At this
Apply in some exemplary embodiments, the semiconductor devices such as can be for the CMOS chip of signal transacting.
In the application some embodiments, ultrasonic fingerprint identifying device can be configured at any suitable electronic equipment
In, the purpose of identification is realized to reach by fingerprint recognition.
In the application some embodiments, a kind of typical electronic equipment is smart phone (a kind of mobile terminal), for example
Shown in Figure 12.In the figure, the ultrasonic fingerprint identifying device 201 of the embodiment of the present application is configured with smart phone 200, when with
Family finger is located in ultrasonic fingerprint identifying device 201 (can directly connect for finger with ultrasonic fingerprint identifying device 201
Touch, or finger is not contacted close to the top of ultrasonic fingerprint identifying device 201) when, ultrasonic fingerprint identification dress
Put 201 ultrasonic waves launched and run into and reflected after finger, because fingerprint has raised line high and steep and depression line valley, this
Sample, which reflects ultrasonic wave, will carry the finger print information of finger；And the ultrasonic wave reflected can act on ultrasound in turn
The piezoelectric sensing part of ripple fingerprint identification device 201, so that be allowed to produce the corresponding electric signal for carrying finger print information, these
Carry finger print information electric signal be transferred in smart phone 200 processing unit 202 (processing unit 202 can for spy
The fixed combination for handling software, hardware or software and hardware), processing unit 202 is after the finger print information collected is obtained, by it
Contrast is carried out with the particular fingerprint information being pre-stored within smart phone 200 to match, if the finger print information collected and spy
Determine finger print information consistent, then pass through identification.Otherwise, identification fails.
In the application some exemplary embodiments, the electronic equipment can also be personal computer, calculating on knee
Machine, cell phone, camera phone, personal digital assistant (PDA), media player, navigation equipment, game console, flat board meter
Calculation machine or wearable device etc..In some other exemplary embodiment of the application, the electronic equipment can also be security protection
Gate inhibition's electronic system, automobile keyless entry electronic system or automobile start electronic system etc. without key.
The application can also provide a kind of computer-readable storage medium, be stored thereon with computer program, the computer journey
Following steps are realized when sequence is executed by processor：
Horizontal distribution and the first piezoelectric layer and the second piezoelectric layer that are isolated from each other are formed at the top of basalis；First pressure
Electric layer has specific piezoelectric strain constant, and second piezoelectric layer has specific piezoelectric voltage constant；
The first plane electrode is formed at the top of first piezoelectric layer and second piezoelectric layer；
Resonance chamber is formed on the basalis, and forms in the resonance chamber the second flat of isolation insulated from each other
Face electrode and the 3rd plane electrode, to form the first device；First plane electrode, first piezoelectric layer and described second
Plane electrode is used to realize that ultrasonic wave is launched, first plane electrode, second piezoelectric layer and the 3rd plane electrode
For realizing that ultrasonic wave is received；
First device and the progress of the semiconductor devices of cooperation is integrated, to form ultrasonic fingerprint identifying device.
It should be understood by those skilled in the art that, embodiments of the invention can be provided as method, system or computer program
Product.The present invention can be used in one or more computer-usable storage mediums for wherein including computer usable program code
The form for the computer program product implemented on (including but is not limited to magnetic disk storage, CD-ROM, optical memory etc.).
The present invention is described with reference to method according to embodiments of the present invention, device.It should be understood that can be by computer program
Instruct the flow in implementation process figure and/or each flow and/or square frame and flow chart and/or block diagram in block diagram
And/or the combination of square frame.These computer program instructions can be provided to all-purpose computer, special-purpose computer, Embedded Processor
Or the processor of other programmable data processing devices is to produce a machine so that pass through computer or other programmable datas
The instruction of the computing device of processing equipment is produced for realizing in one flow of flow chart or multiple flows and/or block diagram one
The device for the function of being specified in individual square frame or multiple square frames.
These computer program instructions, which may be alternatively stored in, can guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works so that the instruction being stored in the computer-readable memory, which is produced, to be included referring to
Make the manufacture of device, the command device realize in one flow of flow chart or multiple flows and/or one square frame of block diagram or
The function of being specified in multiple square frames.
These computer program instructions can be also loaded into computer or other programmable data processing devices so that in meter
Series of operation steps is performed on calculation machine or other programmable devices to produce computer implemented processing, thus in computer or
The instruction performed on other programmable devices is provided for realizing in one flow of flow chart or multiple flows and/or block diagram one
The step of function of being specified in individual square frame or multiple square frames.
In a typical configuration, computing device includes one or more processors (CPU), input/output interface, net
Network interface and internal memory.
Internal memory potentially includes the volatile memory in computer-readable medium, random access memory (RAM) and/or
The forms such as Nonvolatile memory, such as read-only storage (ROM) or flash memory (flash RAM).Internal memory is computer-readable medium
Example.
Computer-readable medium includes permanent and non-permanent, removable and non-removable media can be by any method
Or technology come realize information store.Information can be computer-readable instruction, data structure, the module of program or other data.
The example of the storage medium of computer includes, but are not limited to phase transition internal memory (PRAM), static RAM (SRAM), moved
State random access memory (DRAM), other kinds of random access memory (RAM), read-only storage (ROM), electric erasable
Programmable read only memory (EEPROM), fast flash memory bank or other memory techniques, read-only optical disc read-only storage (CD-ROM),
Digital versatile disc (DVD) or other optical storages, magnetic cassette tape, the storage of tape magnetic rigid disk or other magnetic storage apparatus
Or any other non-transmission medium, the information that can be accessed by a computing device available for storage.Define, calculate according to herein
Machine computer-readable recording medium does not include temporary computer readable media (transitory media), such as data-signal and carrier wave of modulation.
The application can be described in the general context of computer executable instructions, such as program
Module.Usually, program module includes performing particular task or realizes routine, program, object, the group of particular abstract data type
Part, data structure etc..The application can also be put into practice in a distributed computing environment, in these DCEs, by
Remote processing devices connected by communication network perform task.In a distributed computing environment, program module can be with
Positioned at including in the local and remote computer-readable storage medium including storage device.
Each embodiment in this specification is described by the way of progressive, identical similar portion between each embodiment
Divide mutually referring to what each embodiment was stressed is the difference with other embodiment.It is real especially for device
Apply for example, because it is substantially similar to embodiment of the method, so description is fairly simple, related part is referring to embodiment of the method
Part explanation.
Embodiments herein is the foregoing is only, the application is not limited to.For those skilled in the art
For, the application can have various modifications and variations.It is all any modifications made within spirit herein and principle, equivalent
Replace, improve etc., it should be included within the scope of claims hereof.
Claims (14)
1. a kind of manufacture method of ultrasonic fingerprint identifying device, it is characterised in that including：
Horizontal distribution and the first piezoelectric layer and the second piezoelectric layer that are isolated from each other are formed at the top of basalis；First piezoelectric layer
With specific piezoelectric strain constant, second piezoelectric layer has specific piezoelectric voltage constant；
The first plane electrode is formed at the top of first piezoelectric layer and second piezoelectric layer；
Resonance chamber is formed on the basalis, and forms in the resonance chamber the second plane electricity of isolation insulated from each other
Pole and the 3rd plane electrode, to form the first device；First plane electrode, first piezoelectric layer and second plane
Electrode is used to realize that ultrasonic wave is launched, and first plane electrode, second piezoelectric layer and the 3rd plane electrode are used for
Realize that ultrasonic wave is received；
First device and the progress of the semiconductor devices of cooperation is integrated, to form ultrasonic fingerprint identifying device.
2. manufacture method as claimed in claim 1, it is characterised in that between first piezoelectric layer and second piezoelectric layer
Isolated by a gap.
3. manufacture method as claimed in claim 2, it is characterised in that be deposited with isolating bar in the gap.
4. manufacture method as claimed in claim 1, it is characterised in that first piezoelectric layer and the second piezoelectric layer mirror phase
Symmetrically, and first piezoelectric layer and second piezoelectric layer covering basalis at the top of area be not less than designated value.
5. manufacture method as claimed in claim 1, it is characterised in that form first piezoelectric layer and second piezoelectric layer
Technique include depositing technics.
6. manufacture method as claimed in claim 1, it is characterised in that forming the technique of first plane electrode includes deposit
Technique.
7. manufacture method as claimed in claim 1, it is characterised in that described to form resonance chamber on the base layer, and in institute
The second plane electrode and the 3rd plane electrode that isolation insulated from each other is formed in resonance chamber are stated, including：
Structure vertical upset obtained by being formed after first plane electrode；
The graphical basalis, to form resonance chamber；
Conductive layer is formed in the resonance chamber；
The graphical conductive layer, to form the second plane electrode and the 3rd plane electrode of isolation insulated from each other；Described second
Plane electrode is used to be electrically connected with the emission electrode of the semiconductor devices；3rd plane electrode is used to partly lead with described
The receiving electrode of body device is electrically connected with.
8. manufacture method as claimed in claim 1, it is characterised in that the integrated technique includes wafer bonding technique.
9. manufacture method as claimed in claim 1, it is characterised in that also include：
Passivation protection layer is formed at the top of first plane electrode.
10. manufacture method as claimed in claim 7, it is characterised in that described graphically to be realized by etching technics.
11. the ultrasonic fingerprint identifying device that a kind of method by described in claim 1 to 10 any one is manufactured.
12. a kind of electronic equipment for the ultrasonic fingerprint identifying device being configured with described in claim 11.
13. electronic equipment as claimed in claim 12, it is characterised in that it includes mobile terminal.
14. a kind of computer-readable storage medium, is stored thereon with computer program, it is characterised in that the computer program is located
Reason device realizes following steps when performing：
Horizontal distribution and the first piezoelectric layer and the second piezoelectric layer that are isolated from each other are formed at the top of basalis；First piezoelectric layer
With specific piezoelectric strain constant, second piezoelectric layer has specific piezoelectric voltage constant；
The first plane electrode is formed at the top of first piezoelectric layer and second piezoelectric layer；
Resonance chamber is formed on the basalis, and forms in the resonance chamber the second plane electricity of isolation insulated from each other
Pole and the 3rd plane electrode, to form the first device；First plane electrode, first piezoelectric layer and second plane
Electrode is used to realize that ultrasonic wave is launched, and first plane electrode, second piezoelectric layer and the 3rd plane electrode are used for
Realize that ultrasonic wave is received；
First device and the progress of the semiconductor devices of cooperation is integrated, to form ultrasonic fingerprint identifying device.
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