CN107188181B - A kind of low temperature synthesizes the method and silicon carbide products of high-specific-surface mesoporous silicon carbide - Google Patents
A kind of low temperature synthesizes the method and silicon carbide products of high-specific-surface mesoporous silicon carbide Download PDFInfo
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- CN107188181B CN107188181B CN201710437168.2A CN201710437168A CN107188181B CN 107188181 B CN107188181 B CN 107188181B CN 201710437168 A CN201710437168 A CN 201710437168A CN 107188181 B CN107188181 B CN 107188181B
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Abstract
The invention discloses methods and silicon carbide products that a kind of low temperature synthesizes high-specific-surface mesoporous silicon carbide, and wherein method includes that using triblock copolymer P123 as template, ethyl orthosilicate is silicon source, and furfuryl alcohol is that carbon source prepares C/SiO2Presoma；Under an inert gas, by C/SiO2Presoma obtains carbofrax material, crystal form 3C-SiC through magnesiothermic reduction and washing drying.The method that the low temperature that we invents offer synthesizes high-specific-surface mesoporous silicon carbide largely reduces preparation temperature, and reaction temperature can be reduced to 700 DEG C hereinafter, energy consumption is substantially reduced；The precursor preparation time is very short, only needs 4 days or so；Persursor material has chosen the C/SiO of support, intergrowth each other in this technology2As presoma, thus bring advantage is mainly reflected in reaction process middle skeleton structure and is retained to the greatest extent, and material prepared specific surface area is larger, up to 600~800m2/g；Silicon carbide mesoporous material granular size and even particle distribution, size is in 10~20nm.
Description
Technical field
The invention belongs to field of material synthesis technology, and in particular to a kind of low temperature synthesizes the side of high-specific-surface mesoporous silicon carbide
Method and silicon carbide products.
Background technique
Silicon carbide (SiC) is commonly called as corundum, and with the hardness close to diamond, high forbidden bandwidth, high thermal conductivity is small
Dielectric constant and higher electronics be saturated mobility.Based on its numerous excellent physicochemical characteristics, SiC is in non-ferrous metal smelting
Refining industry, building materials ceramics, energy-saving industrial and field of electronic materials show huge application prospect.Currently, industrial preparation
The main method of SiC is Acheson method, i.e., mixes coke fines and quartz sand, is being higher than 2000 DEG C or more pyroreaction systems
Obtain SiC.Domestic and international researcher has carried out a large amount of research to the preparation of SiC material, has developed a variety of synthetic methods, foundation
The difference of carbon source and silicon source, the preparation method of silicon carbide can be roughly divided into shape memory method, self-propagating high-temperature synthesis, chemical gas
Phase sedimentation, sol-gel method, carbothermic method and biomass direct pyrolysis method.According to the difference of reaction system, the conjunction of SiC
Solid-solid reaction system and gas-solid reaction system can be divided into again at method.
Solid-solid reaction system is referred mainly to the simple substance C (carbon and have special construction that active carbon, organic carbon obtain
Mesoporous carbon etc.) and Si be raw material, reacted in the inert atmosphere under the evaporating temperature (1200 DEG C) for being more than Si.American chemical pottery
Porcelain meeting magazine (J.Am.Ceram.Soc., 2010,93,2415-1418) reports one kind and directly synthesizes Jie by silicon powder and graphite powder
The method of hole SiC, the SiC material aperture of synthesis is between 5~40nm.Micro- mesoporous material magazine (Microporous
Mesoporous Mater., 2005,82,137-145) one kind is reported by mesoporous molecular sieve SBA-15, KIT-6 and MCM-48
Mesoporous carbon and the Si reaction obtained for template, the direct synthesizing ordered mesoporous SiC product under the conditions of 1300 DEG C.
Gas-solid reaction system, reaction raw materials are the C/SiO prepared by sol-gel process2Composite material, this process companion
As C serves as reducing agent, commonly referred to as carbothermic reduction reaction.Chinese patent (publication number: CN1401564A) is reported with phenol
Urea formaldehyde is carbon source, with silicic acid extremely for silicon source, under the catalysis of transition metal with sol-gel method synthesize after presoma
Reaction obtains silicon carbide under the conditions of 1250 DEG C.American chemical engineering research magazine (Ind.Eng.Chem.Res., 2004,43,
One kind 4732-4739) be also reported using phenyltrimethoxysila,e as raw material, after being hydrolyzed into gel, directly at 1500 DEG C
Reaction is carried out under the conditions of vacuum drying oven prepares silicon carbide.
The common feature of above-mentioned synthetic method is to require to carry out pyroreaction, and reaction temperature is generally at 1250~1800 DEG C
Between, this undoubtedly increases preparation cost, is highly detrimental to the practical application of the material.In addition, pyroprocess can destroy SiC material
The microscopic appearance and structure of material, cause SiC to reunite, and the usual specific surface area of prepared carbofrax material is smaller, product purity
Low and size distribution is uneven, further limits its industrial applications.Therefore, relatively mild SiC synthesis technology is developed
Process becomes a urgent problem to be solved, and there are specific surface areas to be generally below for carbofrax material prepared by the prior art
200m2/ g is needed using the strong corrosives solution such as a large amount of hydrofluoric acid in preparation process, seriously polluted.
Triblock copolymer P123, full name are as follows: polyethylene oxide-polypropylene oxide-polyethylene oxide triblock copolymer.
Ethyl orthosilicate, English abbreviation TEOS.
Summary of the invention
The purpose of this section is to summarize some aspects of the embodiment of the present invention and briefly introduce some preferable implementations
Example.It may do a little simplified or be omitted to avoid our department is made in this section and the description of the application and the title of the invention
Point, the purpose of abstract of description and denomination of invention it is fuzzy, and this simplification or omit and cannot be used for limiting the scope of the invention.
In view of the above-mentioned and/or existing deficiency for preparing silicon carbide method, the present invention is proposed.
Therefore, the one of purpose of the present invention is to solve deficiency in the prior art, provides one kind at a lower temperature
The method of the mesoporous SiC product of the synthesizing high specific surface area of (500~700 DEG C) high quality, high yield.
In order to solve the above technical problems, the present invention provides the following technical scheme that a kind of synthesis of low temperature is high-specific-surface mesoporous
The method of silicon carbide, including, using triblock copolymer P123 as template, ethyl orthosilicate is silicon source, and furfuryl alcohol is carbon source preparation
C/SiO out2Presoma；Under an inert gas, by C/SiO2Presoma obtains carbofrax material through magnesiothermic reduction and washing drying,
Crystal form is 3C-SiC.
A kind of preferred embodiment of the method for high-specific-surface mesoporous silicon carbide is synthesized as low temperature of the present invention, in which: institute
It states using triblock copolymer P123 as template, ethyl orthosilicate is silicon source, and furfuryl alcohol is that carbon source prepares C/SiO2Presoma,
It is deionized water, ethyl alcohol and mixed in hydrochloric acid is uniform, the addition three block high polymer under the stirring condition of 500~1000rpm
P123 handles 1~3h to dissolving completely, and it is molten that TEOS and furfuryl alcohol are then slowly added into above-mentioned mixing under intense agitation
In liquid, aging 2~5 days, are taken out after being dried in vacuo 2~3 days under the conditions of 60~90 DEG C, in inert gas shielding at room temperature
4~8h of lower 450~650 DEG C of carbonizations, obtains C/SiO2Composite precursor.
A kind of preferred embodiment of the method for high-specific-surface mesoporous silicon carbide is synthesized as low temperature of the present invention, in which: institute
The mass ratio for stating deionized water and furfuryl alcohol is 0.2~10:1；The mass ratio of the ethyl alcohol and furfuryl alcohol is 0.2~4:1；The salt
Acid, concentration are 0.5~2mol/L, and the mass ratio with furfuryl alcohol is 0.05~0.5:1.
A kind of preferred embodiment of the method for high-specific-surface mesoporous silicon carbide is synthesized as low temperature of the present invention, in which: institute
Magnesiothermic reduction is stated, is by C/SiO2Magnesium powder is added after presoma grinding to be uniformly mixed, 3~8h is reacted at 500~700 DEG C,
Heating rate is 1~10 DEG C/min, Temperature fall after having roasted.
A kind of preferred embodiment of the method for high-specific-surface mesoporous silicon carbide is synthesized as low temperature of the present invention, in which: institute
State magnesium powder and C/SiO2The mass ratio of presoma is 1~4:1.
A kind of preferred embodiment of the method for high-specific-surface mesoporous silicon carbide is synthesized as low temperature of the present invention, in which: institute
It states and is vigorously stirred, mixing speed is 1000~4000rpm.
A kind of preferred embodiment of the method for high-specific-surface mesoporous silicon carbide is synthesized as low temperature of the present invention, in which: institute
The mass ratio for stating ethyl orthosilicate and furfuryl alcohol is 1~4:1.
A kind of preferred embodiment of the method for high-specific-surface mesoporous silicon carbide is synthesized as low temperature of the present invention, in which: institute
The mass ratio for stating block copolymer P123 and furfuryl alcohol is 0.2~10:1.
A kind of preferred embodiment of the method for high-specific-surface mesoporous silicon carbide is synthesized as low temperature of the present invention, in which: institute
State washing drying, be take out product cleaned in 1~3mol/L hydrochloric acid solution, then cleaned with deionized water, through filtering and
Drying.
Further object of the present invention is provide a kind of high specific surface area and mesoporous SiC product.
In order to solve the above technical problems, the present invention provides the following technical scheme that a kind of high-specific-surface mesoporous silicon carbide,
Specific surface area is 170~786m2/g。
Possessed by of the invention the utility model has the advantages that
(1) preparation temperature is largely reduced, reaction temperature can be reduced to 700 DEG C hereinafter, energy consumption is substantially reduced；Forerunner
Body preparation time is very short, only needs 4 days.
(2) sol-gel method is used in the preparation process of silicon carbide precursor, and it is anti-that all raw materials are directly mixed to progress
It answers, easy to operate compared with the preparation method of other silicon carbide precursors, equipment is simple, large-scale production easy to accomplish.
(3) in this technology persursor material have chosen each other support, intergrowth C/SiO2As presoma, thus band
The advantage come is mainly reflected in reaction process middle skeleton structure and is retained to the greatest extent, material prepared specific surface area compared with
Greatly, up to 600~800m2/g；Silicon carbide mesoporous material granular size and even particle distribution, size is in 10~20nm.
(4) SiO in final product is successfully avoided2A large amount of presence do not need to simplify acid cleaning process using hydrogen
The stronger liquid of the corrosivity such as fluoric acid and nitric acid, it is more environmentally friendly convenient, do not generate secondary pollution.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill of field, without any creative labor, it can also be obtained according to these attached drawings other
Attached drawing.Wherein:
Fig. 1 is the XRD spectrum of SiC mesoporous material made from the embodiment of the present invention 1, is shown in figure, in figure 2 θ 35.6,
41.4,60.0,71.7 (111) of 3C-SiC are respectively belonging to the peak at 75.5 °, (200), (220), (311) and (222) are brilliant
Face, it can be seen that no stray crystal exists.
Fig. 2 is SEM (Electronic Speculum) map of SiC mesoporous material made from the embodiment of the present invention 1, nano silicon carbide granulate distribution
Uniformly, size is in 10~20nm.
Fig. 3 is FT-IR (infrared) map of SiC mesoporous material made from the embodiment of the present invention 1, and prepared sample is shown in figure
Product are in 830cm-1There are obvious absorption peaks, the stretching vibration of corresponding C-Si key in place, and illustrates sample without obvious Si-O vibration peak in figure
Middle SiO2Content is extremely low.
Fig. 4 is the N2 adsorption-desorption figure of SiC mesoporous material made from the embodiment of the present invention 1, in figure P/Po=0.6~
With the presence of obvious hysteresis loop at 0.8, belong to mesoporous material.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, right combined with specific embodiments below
A specific embodiment of the invention is described in detail.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Secondly, " one embodiment " or " embodiment " referred to herein, which refers to, may be included at least one realization side of the invention
A particular feature, structure, or characteristic in formula." in one embodiment " that different places occur in the present specification not refers both to
The same embodiment, nor the individual or selective embodiment mutually exclusive with other embodiments.
Embodiment 1
5g deionized water, 3g ethyl alcohol, 0.5g HCl solution (1mol/L) are added in polyethylene bottle of the 100mL with sealing
It is uniformly mixed, the processing of 4.1g three block high polymer P1 23 being added under stirring condition 2 hours, extremely dissolution is complete.Then by 10g
TEOS and 5g furfuryl alcohol is slowly added into vigorous stirring in above-mentioned mixed solution, at room temperature aging 2 days, then in 70 DEG C of items
It is dried in vacuo 2 days under part.Gained block is taken out, is carbonized 6 hours under protection of argon gas, obtains being filled in mesoporous silicon oxide
The compound of carbon.It is mixed magnesium powder is added after the grinding of above-mentioned compound with the mass ratio of 1:1, is reacted 6 hours at 700 DEG C.Institute
It obtains product to clean in 1mol/L hydrochloric acid solution, without excessive SiO in product2In the presence of there is no need to use the deep-etchings such as hydrofluoric acid
Property liquid.Then deionized water solution cleans, and after filtering and drying, obtains mesoporous SiC material, specific surface area 704m2/
g。
Referring to attached drawing, the XRD spectrum of silicon carbide mesoporous material made from present example 1, Jie of preparation are given in Fig. 1
Each crystal face (mark of the position of the diffraction maximum of hole silicon carbide and diffraction maximum and 3C-SiC in standard PDF card No.29-1129
In Fig. 1) position matches, and is 3C-SiC monocrystalline.
Referring to attached drawing, Fig. 2 is the SEM photograph of silicon carbide mesoporous material made from example 1, the mesoporous material of prepared silicon carbide
Expect granular size and even particle distribution, size is in 10-20nm.
Referring to attached drawing, Fig. 3 is the infrared spectrogram of silicon carbide mesoporous material made from example 1, can from infrared spectrogram
Know other than the hydrone of absorption, there is obviously Si-C absorption peak (830cm-1).
Referring to attached drawing, Fig. 4 is the nitrogen adsorption desorption figure of silicon carbide mesoporous material made from example 1, and Cong Tuzhong can be observed
Apparent hysteresis loop exists, obtained silicon carbide category mesoporous material.
Embodiment 2
5g deionized water, 3g ethyl alcohol, 0.5g HCl solution (1mol/L) are added in polyethylene bottle of the 100mL with sealing
It is uniformly mixed, the processing of 4.1g three block high polymer P1 23 being added under stirring condition 2 hours, extremely dissolution is complete.Then by 10g
TEOS and 5g furfuryl alcohol is slowly added into vigorous stirring in above-mentioned mixed solution, at room temperature aging 2 days, then in 70 DEG C of items
It is dried in vacuo 2 days under part.Gained block is taken out, is carbonized 6 hours under protection of argon gas, obtains being filled in mesoporous silicon oxide
The compound of carbon.It is mixed magnesium powder is added after the grinding of above-mentioned compound with the mass ratio of 1:2, is reacted 6 hours at 700 DEG C.Institute
It obtains product to clean in 1mol/L hydrochloric acid solution, without excessive SiO in product2In the presence of there is no need to use the deep-etchings such as hydrofluoric acid
Property liquid then deionization it is water-soluble, liquid cleaning, after filtering and drying, obtain mesoporous SiC material, specific surface area 786m2/
g。
Embodiment 3
5g deionized water, 5g ethyl alcohol, 1.0g HCl solution (1mol/L) are added in polyethylene bottle of the 100mL with sealing
It is uniformly mixed, the processing of 3g three block high polymer P1 23 being added under stirring condition 2 hours, extremely dissolution is complete.Then by 12g
TEOS and 5g furfuryl alcohol is slowly added into vigorous stirring in above-mentioned mixed solution, at room temperature aging 2 days, then in 70 DEG C of items
It is dried in vacuo 2 days under part.Gained block is taken out, is carbonized 6 hours under protection of argon gas, obtains being filled in mesoporous silicon oxide
The compound of carbon.It is mixed magnesium powder is added after the grinding of above-mentioned compound with the mass ratio of 1:3, is reacted 6 hours at 650 DEG C.Institute
Product is obtained in 2mol/L hydrochloric acid solution, without excessive SiO in product2In the presence of there is no need to use the strong corrosives liquid such as hydrofluoric acid
Body, then deionized water solution obtains mesoporous SiC material, specific surface area 584m after filtering and drying2/g。
Embodiment 4
5g deionized water, 3g ethyl alcohol, 0.5g HCl solution (1mol/L) are added in polyethylene bottle of the 100mL with sealing
It is uniformly mixed, the processing of 6g three block high polymer P1 23 being added under stirring condition 2 hours, extremely dissolution is complete.Then by 8g
TEOS and 5g furfuryl alcohol is slowly added into vigorous stirring in above-mentioned mixed solution, at room temperature aging 3 days, then in 70 DEG C of items
It is dried in vacuo 2 days under part.Gained block is taken out, is carbonized 6 hours under protection of argon gas, obtains being filled in mesoporous silicon oxide
The compound of carbon.It is mixed magnesium powder is added after the grinding of above-mentioned compound with the mass ratio of 1:4, is reacted 6 hours at 600 DEG C.Institute
Product is obtained in 2mol/L hydrochloric acid solution, without excessive SiO in product2In the presence of there is no need to use the strong corrosives liquid such as hydrofluoric acid
Body, then deionized water solution obtains mesoporous SiC material, specific surface area 170m after filtering and drying2/g。
Embodiment 5 (comparative example)
5g deionized water, 3g ethyl alcohol, 0.5g HCl solution (1mol/L) are added in polyethylene bottle of the 100mL with sealing
It is uniformly mixed, the processing of 4.1g three block high polymer P1 23 being added under stirring condition 2 hours, extremely dissolution is complete.Then by 10g
TEOS is slowly added into vigorous stirring in above-mentioned mixed solution, at room temperature aging 4 days, then dry under the conditions of 70 DEG C
3 days, obtain mesoporous silicon oxide.Graphite powder and magnesium powder will be added with 1:1 after the grinding of above-mentioned compound；2 mass ratio mixing, in
It is reacted 6 hours at 700 DEG C.Products therefrom cleans in 1mol/L hydrochloric acid solution, then deionized water solution clean, through filtering and
After drying, the specific surface area of material prepared is 102m2/g。
Embodiment 6 (comparative example)
5g deionized water, 3g ethyl alcohol, 0.5g HCl solution (1mol/L) are added in polyethylene bottle of the 100mL with sealing
It is uniformly mixed, the processing of 4.1g three block high polymer P1 23 being added under stirring condition 2 hours, extremely dissolution is complete.Then by 10g
TEOS is slowly added into vigorous stirring in above-mentioned mixed solution, at room temperature aging 4 days, then dry under the conditions of 70 DEG C
3 days, obtain mesoporous silicon oxide.By carbon source is added after the grinding of above-mentioned compound, (sawdust is carbonized for 550 DEG C under argon atmosphere
To) and magnesium powder with 1:1；2 mass ratio mixing, reacts 6 hours at 700 DEG C.Products therefrom is clear in 1mol/L hydrochloric acid solution
It washes, then deionized water solution cleans, and after filtering and drying, the specific surface area of material prepared is 114m2/g。
It can be seen that the method that the low temperature that we invents offer synthesizes high-specific-surface mesoporous silicon carbide, largely drops
Low preparation temperature, reaction temperature can be reduced to 700 DEG C hereinafter, energy consumption is substantially reduced；The precursor preparation time is very short, only needs 4 days.
Sol-gel method is used in the preparation process of silicon carbide precursor, and all raw materials are directly mixed and are reacted, with other carbon
The preparation method of SiClx presoma is compared to easy to operate, and equipment is simple, large-scale production easy to accomplish；Persursor material in this technology
Have chosen the C/SiO of support, intergrowth each other2As presoma, thus bring advantage major embodiment is during the reaction
Skeleton structure is retained to the greatest extent, and material prepared specific surface area is larger, up to 600~800m2/g；Silicon carbide is mesoporous
Material granule size and even particle distribution, size is in 10~20nm；Successfully avoid SiO in final product2A large amount of presence,
To simplifying acid cleaning process, do not need using the stronger liquid of the corrosivity such as hydrofluoric acid and nitric acid, it is more environmentally friendly convenient, it does not produce
Raw secondary pollution.
Skeleton C or skeleton SiO is initially formed it is noted that being all made of in the prior art2, then subsequent mechanical introduce it is another
Component is planted to prepare, and persursor material has chosen the C/SiO supported each other in this technology2As presoma, thus bring
Advantage is mainly reflected in reaction process middle skeleton structure and is retained to the greatest extent, and material prepared specific surface area is larger；Its
It in cleaning process in low temperature process compared with needing to remove extra SiO using a large amount of hydrofluoric acid2, and this technique is without extra SiO2It deposits
Need to only a small amount of hydrochloric acid used just to reach pickling purpose, environment-friendly advantage is obvious.
We invents preferred magnesium reduction process, it is high to overcome carbothermic method reaction temperature, it is difficult to control product morphology
The problem of；Overcome the problem that metallic sodium reaction safety can be poor；The problem of overcoming the environmental protection of metal fused salt and recycling.And I
In the magnesium thermit of invention and the cohesive process of presoma, we have found optimal temperature range (only need 500~700 DEG C),
Heating rate and retention time cannot obtain target product when lower than the thermotonus；And, it is without the use of hydrogen fluorine as described
Acid；Also have found the magnesium powder additive amount for capableing of profile error with system.Entire reaction system is an entirety, each Parameter Conditions phase
Mutually influence, certain link with integrally mismatch, product quality be easy for occurring it is unstable, for example, our invention to feed liquid match into
It has gone optimization, the especially additional amount of furfuryl alcohol, has there are a large amount of silica to remain when lower than value range, have magnesium carbide etc. higher than value range
By-product exists；Heating rate has carried out preferred optimization in roasting process, it is therefore an objective to so that the interaction growth of presoma is more filled
Point, to increase silicon carbide product specific surface area；It further include the optimization of stirring rate, mixing time, charging sequence, so that forerunner
Body preparation time is very short, only needs 4 days.Under whole system most fare-you-well, can synthesize specific surface area within four days is
786m2The mesoporous SiC material of/g.
It should be noted that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to preferable
Embodiment describes the invention in detail, those skilled in the art should understand that, it can be to technology of the invention
Scheme is modified or replaced equivalently, and without departing from the spirit and scope of the technical solution of the present invention, should all be covered in this hair
In bright scope of the claims.
Claims (1)
1. a kind of method that low temperature synthesizes high-specific-surface mesoporous silicon carbide, it is characterised in that: by 5g deionized water, 3g ethyl alcohol,
The HCl solution of 0.5g 1mol/L is added in polyethylene bottle of the 100mL with sealing and is uniformly mixed, and is added under stirring condition
4.1g three block high polymer P1 23 is handled extremely to be dissolved completely for 2 hours, then that 10gTEOS and 5g furfuryl alcohol is slow with vigorous stirring
It is add to the above mixed solution, at room temperature aging 2 days, is then dried in vacuo 2 days under the conditions of 70 DEG C, it is blocky to take out gained
Object is carbonized 6 hours under protection of argon gas, obtains the compound for being filled with carbon in mesoporous silicon oxide, the compound is ground
It being mixed afterwards with magnesium powder with the mass ratio of 1:2, is reacted 6 hours at 700 DEG C, products therefrom cleans in 1mol/L hydrochloric acid solution,
After filtering and drying, mesoporous SiC material, specific surface area 786m are obtained2/g。
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| CN101876095A (en) * | 2010-07-28 | 2010-11-03 | 中国人民解放军国防科学技术大学 | Porous silicon carbide fibers and preparation method thereof |
| CN104876221A (en) * | 2015-05-25 | 2015-09-02 | 华东理工大学 | Method for obtaining ordered mesoporous silicon carbide through in-situ conversion of polycarbosilane |
| CN105236411A (en) * | 2015-10-12 | 2016-01-13 | 湖北朗驰新型材料有限公司 | High-specific surface area nanometer mesoporous silicon carbide hollow ball and preparation method thereof |
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2017
- 2017-06-12 CN CN201710437168.2A patent/CN107188181B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101876095A (en) * | 2010-07-28 | 2010-11-03 | 中国人民解放军国防科学技术大学 | Porous silicon carbide fibers and preparation method thereof |
| CN104876221A (en) * | 2015-05-25 | 2015-09-02 | 华东理工大学 | Method for obtaining ordered mesoporous silicon carbide through in-situ conversion of polycarbosilane |
| CN105236411A (en) * | 2015-10-12 | 2016-01-13 | 湖北朗驰新型材料有限公司 | High-specific surface area nanometer mesoporous silicon carbide hollow ball and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Synthesis of nanostructured silicon carbide spheres from mesoporous C–SiO 2 nanocomposites;Wang K et al.;《Chemical Communications》;20091124;第46卷(第2期);第 303-305页，补充材料 * |
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