CN107188114B - Surface microstructure preparation method based on active refrigeration liquid drop condensation - Google Patents
Surface microstructure preparation method based on active refrigeration liquid drop condensation Download PDFInfo
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- CN107188114B CN107188114B CN201710351836.XA CN201710351836A CN107188114B CN 107188114 B CN107188114 B CN 107188114B CN 201710351836 A CN201710351836 A CN 201710351836A CN 107188114 B CN107188114 B CN 107188114B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00484—Processes for releasing structures not provided for in group B81C1/00476
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CN201710351836.XA CN107188114B (en) | 2017-05-18 | 2017-05-18 | Surface microstructure preparation method based on active refrigeration liquid drop condensation |
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CN201710351836.XA CN107188114B (en) | 2017-05-18 | 2017-05-18 | Surface microstructure preparation method based on active refrigeration liquid drop condensation |
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CN107188114A CN107188114A (en) | 2017-09-22 |
CN107188114B true CN107188114B (en) | 2019-12-24 |
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Families Citing this family (1)
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CN111170270A (en) * | 2020-01-07 | 2020-05-19 | 南昌大学 | Surface microstructure preparation method based on electric field regulation and control morphology |
Family Cites Families (7)
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JP2009191152A (en) * | 2008-02-14 | 2009-08-27 | Univ Of Tokyo | HONEYCOMB STRUCTURE COMPRISING DENDRITIC pi-CONJUGATED BASED POLYMER AND METHOD OF MANUFACTURING THE SAME |
CN101497704B (en) * | 2009-02-25 | 2011-04-27 | 厦门大学 | High temperature resistant, ultra-hydrophile polystyrene porous membrane material and preparation thereof |
CN102943256B (en) * | 2012-10-24 | 2014-11-05 | 中国科学院化学研究所 | Honeycomb porous structure titanium dioxide coating implant material and preparation method thereof |
CN103601912B (en) * | 2013-08-31 | 2016-07-13 | 西北工业大学 | Preparation method based on the Tinea Ranae type silsesquioxane high molecular cellular porous thin film of grafted fluoropolymer esters of acrylic acid hydridization |
CN103612423B (en) * | 2013-11-22 | 2016-01-06 | 中国科学院化学研究所 | Polyimide film and alumina formwork compound asymmetric composite porous and preparation method thereof |
CN104211981A (en) * | 2014-09-11 | 2014-12-17 | 北京航空航天大学 | Self-assembled forming method of multilevel honeycomb micropore polymer film |
CN104327298B (en) * | 2014-11-29 | 2017-03-29 | 青岛市第三人民医院 | A kind of method that nano-honeycomb shape film is prepared based on spirogram |
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Address after: 330047 No. 235 East Nanjing Road, Jiangxi, Nanchang Applicant after: Nanchang University Applicant after: Nanchang Silicon-based Semiconductor Technology Co., Ltd. Address before: 330047 No. 235 East Nanjing Road, Jiangxi, Nanchang Applicant before: Nanchang University Applicant before: Nanchang Huanglv Lighting Co., Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20200731 Address after: 330029 first floor of 101 Main plant building, 699 aixihu North Road, high tech Zone, Nanchang City, Jiangxi Province Patentee after: NANCHANG GUIJI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 330047 No. 235 East Nanjing Road, Jiangxi, Nanchang Co-patentee before: NANCHANG GUIJI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Patentee before: Nanchang University |
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CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Annex building 2, engineering technology research center, No. 679, aixihu North Road, Nanchang high tech Industrial Development Zone, Nanchang City, Jiangxi Province Patentee after: NANCHANG GUIJI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 330029 first floor of 101 Main plant building, 699 aixihu North Road, high tech Zone, Nanchang City, Jiangxi Province Patentee before: NANCHANG GUIJI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |