CN107147372A - Six numerical-control attenuators of high accuracy of ultra-wide temperature resistant range - Google Patents
Six numerical-control attenuators of high accuracy of ultra-wide temperature resistant range Download PDFInfo
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- CN107147372A CN107147372A CN201710196501.5A CN201710196501A CN107147372A CN 107147372 A CN107147372 A CN 107147372A CN 201710196501 A CN201710196501 A CN 201710196501A CN 107147372 A CN107147372 A CN 107147372A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H17/00—Networks using digital techniques
- H03H17/0054—Attenuators
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Abstract
The invention discloses a kind of suitable for CMOS and six numerical-control attenuators of high accuracy with ultra-wide temperature resistant range of BiCMOS technique.Six numerical-control attenuators, include the basic attenuation units of a boost module, a voltage transformation module and six cascades.The opposite property of working characteristics when the attenuator is mainly raised using the elevated working characteristics of triode tube grid voltage with its temperature, makes the grid voltage of applying unit attenuation module loading with temperature positive correlation.Secondly, the decay additional phase shift of attenuator is reduced with the positively related characteristic of temperature using the equivalent capacity of triode grounded-grid.Influence present invention significantly reduces the bad temperature characterisitic of device to numerical-control attenuator service behaviour.The program is applied to millimeter wave monolithic integrated circuit field, has great application value to the circuit system of military combat and Aero-Space.
Description
Technical field
The present invention relates to millimeter-wave monolithic integrated technology field, and in particular to one is based on SiGe BiCMOS techniques, has
Six numerical-control attenuators of high accuracy of ultra-wide temperature resistant range.
Background technology
Millimeter wave phased-array technique integrates millimeter-wave technology and phased-array technique advantage.On the one hand, millimeter wave has
Broadband, high accuracy, high-resolution and big information capacity.On the other hand, phased-array technique has faster beam steering.And can
So that the strong jamming of all directions in space is offset by array.It has been widely used for national defence, science and satellite
In the system of communication.Millimeter wave transceiving front end is as the critical component of phased-array technique, and its complete radio-frequency enabled is to phased array
Performance play a decisive role.With the development of millimeter wave phased-array technique, complexity and the cost increase of system, millimeter wave transceiving
Gradually often single-chip integration develops for front end.SiGe BiCMOS techniques can be not only that radio frequency and simulation provide high performance SiGe
HBT techniques and the CMOS technology that High Density Integration can be provided for Design of Digital Circuit.Therefore based on SiGe BiCMOS works
The millimeter wave transceiving front end monolithic integrated optical circuit of skill is necessary for the development of millimeter wave phased-array technique.
As the main flow selection of the amplitude controller part of current receiving and transmitting front end, numerical-control attenuator possesses the superior linearity.
For semiconductor devices based on SiGe BiCMOS techniques is compared to techniques such as GaAs/InP/GaN, the working junction temperature of its device
Rise faster, silicon-based substrate heat conductivity is not good in addition, governs the application development of SiGe BiCMOS technique devices.Do not have at present
Have and find any one on the patent for the temperature characterisitic for how improving numerical-control attenuator, be based on present invention firstly provides one
SiGe BiCMOS techniques, six numerical-control attenuators of high accuracy with ultra-wide temperature resistant range.
The content of the invention
The technical problems to be solved by the invention are the bad temperature characterisitics pair of the semiconductor devices of SiGe BiCMOS techniques
The deterioration of numerical-control attenuator service behaviour.Carry out the unit design of numerical-control attenuator typically all can be used as each list using metal-oxide-semiconductor
The switch of the straight-through state of member switching and decay state.The circuit structure of Pi types attenuation network used in the present invention is shown in Fig. 1.Gone here and there in Fig. 1
The M1 switching tubes of connection grid voltage under straight-through state is high level, M2, M3 switching tube in parallel be under low level, decay state each
The grid voltage state reversion of switching tube.It is in straight-through equivalent circuit Fig. 2 with closure state.As shown in Figure 2, metal-oxide-semiconductor
Grid be equivalent to a resistance for high level, an electric capacity is then equivalent to when being low level.Fig. 3 is that (grid are a length of for metal-oxide-semiconductor
120n, grid width is 100u) 1.2V voltages are loaded in grid, in 10-20GHz frequency bands, its insertion loss is with insertion phase with temperature
Spend the curve of change.The differential loss of metal-oxide-semiconductor in the conduction state increases with the rise of frequency as shown in Figure 3, with temperature
Increase and increase；The insertion phase of metal-oxide-semiconductor is delayed with the increase of frequency, delayed with the rise of temperature.Fig. 4 is should
When the attenuation of attenuation network is 8dB, the curve that attenuation and additional phase shift are varied with temperature.As shown in Figure 4, it is limited to MOS
The temperature characterisitic of pipe, the attenuation of attenuator is fluctuated between 7dB to 8.8dB, and additional phase shift is from ripple -2deg to 1.5deg
Dynamic, its working condition is very unstable.Therefore, for monolithic numerical-control attenuator designer, the temperature characterisitic logarithm of metal-oxide-semiconductor is reduced
The influence for controlling attenuator is a critically important job.
The present invention solves the technical scheme that is used of above-mentioned technical problem：Firstth, propose that a kind of voltage transformation module makes
The grid voltage for being carried in metal-oxide-semiconductor is varied with temperature, and positive correlation is presented with temperature change in its voltage change trend.Secondth, propose
Variable capacitance is done with metal-oxide-semiconductor, the decay additional phase shift under different temperatures is reduced by rising the reduction of its equivalent capacity with temperature.
3rd, temperature in use negative correlation resistance, the temperature in use positive correlation resistance in series arm in series arm.
Further that the principle of the voltage transformation module is, beneficial in technology library with temperature change positive correlation characteristic
Resistance make its output voltage and temperature change that positive correlation is presented.
It is further that the voltage transformation module has 12 voltage output branch roads altogether.Each branch route two crystal
Pipe, a switching tube, an isolation resistance and one constitute to ground resistance.
It is further, because the voltage output control signal for controlling to be formed circuit based on the velocity of wave that CMOS technology is designed is
1.2V, the switching tube driving voltage of described voltage output branch road is 2.5V, therefore adds boost module.Described boosting mould
Block is made up of 8 transistors and a reverser, the opposite control voltage of output two-way, respectively 0V and 2.5V.
It is further that the electric current of each described voltage output branch road is fixed value 100uA.The voltage transformation module
Supply voltage be 2.5V.
Beneficial effects of the present invention：By introducing voltage transformation module and simulation to the transistor of ground electric capacity, because of metal-oxide-semiconductor
Grid voltage changes to be varied with temperature in the opposite direction with its equivalent resistance, thus reduces the temperature characterisitic of metal-oxide-semiconductor to numerical control attenuation
The influence of device, reduces the fluctuation range of setup unit attenuation, improves decay additional phase shift, makes its service behaviour in difference
At a temperature of tend towards stability.
Brief description of the drawings
Fig. 1 is the electrical block diagram of Pi types attenuation network used in the present invention；
Fig. 2 is equivalent circuit structure signal of the Pi types attenuation network used in the present invention under straight-through and closure state
Figure；
Fig. 3 is that the present invention is electric in grid loading 1.2V using the metal-oxide-semiconductor (a length of 120n of grid, grid width is 100u) in technique
Pressure, in 10-20GHz frequency bands, the curve map that its insertion loss is varied with temperature with insertion phase；
When Fig. 4 is that the attenuation of Pi types attenuation network used in the present invention is 8dB, (a) attenuation and (b) additional phase shift
The curve changed under high/low temperature with frequency (14-19GHz).
Fig. 5 is the six digit control attenuator circuit structural representations of high accuracy of ultra-wide temperature resistant range proposed by the present invention；
Fig. 6 is domain photo of the invention；
The stationary wave characteristic curve that Fig. 7 is embodied for the present invention；
The decay additional phase shift characteristic curve that Fig. 8 is embodied for the present invention；
The attenuation accuracy characteristic curve for each unit that Fig. 9 is embodied for the present invention；
High/low temperature attenuation and its decay RMS characteristic curves that Figure 10 is embodied for the present invention
Fig. 5 and Fig. 6 description of symbols：4dB fixed attenuation amount unit networks (101), 2dB fixed attenuation amount units (102),
0.5dB fixed attenuation amount units (103), 1dB fixed attenuation amount units (104), 8dB fixed attenuation amount units (105), 16dB is solid
Determine attenuation unit (106), boost module (201), current source module (301), 2.5V supply voltages (401), variable voltage turns
Change the mold block (501).Resistance (R1-R68), N-type transistor (Q1-Q40), P-type transistor (Q41-Q48), Dg transistors (dgQ1-
DgQ10), phase inverter (inverter), port (in, out and control signal)
Embodiment
The embodiment to the present invention is further described below in conjunction with the accompanying drawings.
As shown in figure 5, the present invention includes one 6 different fixed attenuation amount unit networks (101-106), a boosting mould
Block (201) and variable voltage modular converter (501).Current source module (301) and 2.5V supply voltages module (401) be not in this hair
In bright scope.
Wherein described 4dB fixed attenuations amount unit networks (101) are by damping resistance (R33, R34 and R37), isolation resistance
(R31, R35), substrate isolation resistance (R32 and R36), switching tube (Q21 and Q22) and simulation are constituted to ground capacitance tube (Q23).
Wherein described 2dB fixed attenuations amount unit networks (102) are by damping resistance (R40, R41 and R44), DC-isolation electricity
(R38, R43), substrate isolation resistance (R39 and R42), switching tube (Q24 and Q25) and simulation is hindered to constitute to ground capacitance tube (Q26).
Wherein described 0.5dB fixed attenuations amount unit networks (103) are by damping resistance (R45), DC-isolation resistance
(R47), substrate isolation resistance (R46), switching tube (Q27) and simulation are constituted to ground capacitance tube (Q28).
Wherein described 1dB fixed attenuations amount unit networks (104) by damping resistance (R50), DC-isolation resistance (R49),
Substrate isolation resistance (R48), switching tube (Q29) and simulation are constituted to ground capacitance tube (Q30).
Wherein described 8dB fixed attenuations amount unit networks (105) are by damping resistance (R54, R56 and R59), DC-isolation electricity
Hinder (R51, R55 and R58), substrate isolation resistance (R52, R54 and R57), switching tube (Q31, Q32 and Q33) and simulation electric to ground
Hold pipe (Q34 and Q35) composition.
Wherein described 16dB fixed attenuations amount unit networks (106) are by damping resistance (R62, R65 and R68), DC-isolation
Resistance (R60, R64 and R67), substrate isolation resistance (R61, R63 and R66), switching tube (Q36, Q37 and Q39) and simulation arrive ground
Capacitance tube (Q38 and Q40) is constituted.
Wherein described boost module (201) manages (Q45- by phase inverter (inverter), NFET pipes (Q41-Q44) and PFET
48) constitute, seven identical boost modules, the variable voltage modular converter (501) by current stabilization FET pipe (Q1-Q20),
Control voltage transformation temperature resistance (R1-R0) and DC-isolation resistance (R21-R30) composition.
50 ohm of matching ports are terminated in the in shown in Fig. 5 and make input, and output end is made in 50 ohm of out ends matching port,
Control signal is inputted in CPU to Control signal ports, control signal voltage is lifted to 2.5V by boost module, is controlled
Voltage transformation module (501) becomes 2.5V voltages and the positively related variable voltage of temperature, variable voltage control attenuation network
The switching tube of (101-106) carries out the switching of decay state and straight-through state.
As shown in Fig. 7-Figure 10, when frequency input signal is 15-18GHz, the control voltage to 6 attenuators is carried out
(it is 1 to open to 64 status scans, and it is first to close as 0,0.5dB, the 6th is ordered into successively, state encoding is 000000
It it is -55 DEG C~125 DEG C in temperature range, the S21 of its output signal additional phase shift is at ± 4 °, and port standing wave is excellent to 111111)
In 10dB, decay RMS (root-mean-square error) is less than 0.8dB, and 0.5dB units attenuation accuracy is that 0.5dB units decline better than 0.1dB
Subtract precision be better than 0.07dB, 1dB units attenuation accuracy be better than 0.01dB, 2dB units attenuation accuracy be better than 0.08dB,
0.2dB units attenuation accuracy is that, better than 0.1dB, 8dB units attenuation accuracy is that, better than 0.53dB, 16dB units attenuation accuracy is excellent
In 0.78dB.Thus, it could be seen that the invention can improve influence of the bad temperature characterisitic of semiconductor devices to numerical-control attenuator, in millimeter
There is great application value in ripple phased array field.
Claims (4)
1. six numerical-control attenuators of high accuracy of ultra-wide temperature resistant range, the attenuator of the ultra-wide temperature resistant range includes boost module
(201), variable voltage modular converter (501) and six attenuation units (101-106).When circuit works, pass through simulation to ground
After transistor, boost module and voltage transformation module, improve the temperature undesirable feature of device so that attenuator -55 DEG C~
125 DEG C of operated within range excellent performances.
2. six numerical-control attenuators of high accuracy of ultra-wide temperature resistant range as claimed in claim 1, it is characterised in that：Each decay is single
First (101-106) be parallel to ground leg all include a simulation to ground capacitance tube (Q23, Q26, Q28, Q30, Q34, Q35,
Q38 and Q40), the structure reduces different temperatures using the equivalent capacity of the triode grounded-grid characteristic negatively correlated with temperature
The decay additional phase shift of lower attenuator.The advantage of the structure is to save original capacitance compensation module so that circuit structure
Compact, chip area is small.
3. six numerical-control attenuators of high accuracy of ultra-wide temperature resistant range as claimed in claim 1, it is characterised in that：Seven identicals
Boost module (201) includes phase inverter (inverter), NFET pipes (Q41-Q44) and PFET pipes (Q45-48).This structure is main
It is the control signal for the signal of 6 1.2V controls being lifted to 10 2.5V, saves the signal number of CPU outputs.
4. six numerical-control attenuators of high accuracy of ultra-wide temperature resistant range as described in being sayed claim 1, it is characterised in that：Can power transformation
Conversion module (501) is pressed to include current stabilization FET pipes (Q1-Q20), control voltage transformation temperature resistance (R1-R0) and DC-isolation electricity
Hinder (R21-R30).This structure is the positive correlation characteristic using resistance and temperature, produces the elevated voltage with temperature rise,
Improve device and rise the feature that its insertion loss diminishes with temperature, so that the service behaviour of numerical-control attenuator is -55 DEG C~125
DEG C tend towards stability.
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| CN201710196501.5A CN107147372A (en) | 2017-03-29 | 2017-03-29 | Six numerical-control attenuators of high accuracy of ultra-wide temperature resistant range |
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| CN201710196501.5A CN107147372A (en) | 2017-03-29 | 2017-03-29 | Six numerical-control attenuators of high accuracy of ultra-wide temperature resistant range |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108023572A (en) * | 2017-11-16 | 2018-05-11 | 北京遥感设备研究所 | A kind of low difference CMOS difference numerical-control attenuators |
| CN109412554A (en) * | 2018-09-22 | 2019-03-01 | 复旦大学 | A kind of broadband high precision numerical control active attenuator |
| CN109684691A (en) * | 2018-12-12 | 2019-04-26 | 中国电子科技集团公司第五十五研究所 | A kind of microwave broadband temperature compensation attenuator |
| CN112653411A (en) * | 2020-12-15 | 2021-04-13 | 重庆西南集成电路设计有限责任公司 | Temperature compensation circuit and method for numerical control phase shift/digital attenuator |
| CN114265038A (en) * | 2021-11-22 | 2022-04-01 | 电子科技大学 | High-precision switch type phase-shifting unit with temperature compensation effect |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108023572A (en) * | 2017-11-16 | 2018-05-11 | 北京遥感设备研究所 | A kind of low difference CMOS difference numerical-control attenuators |
| CN109412554A (en) * | 2018-09-22 | 2019-03-01 | 复旦大学 | A kind of broadband high precision numerical control active attenuator |
| CN109684691A (en) * | 2018-12-12 | 2019-04-26 | 中国电子科技集团公司第五十五研究所 | A kind of microwave broadband temperature compensation attenuator |
| CN112653411A (en) * | 2020-12-15 | 2021-04-13 | 重庆西南集成电路设计有限责任公司 | Temperature compensation circuit and method for numerical control phase shift/digital attenuator |
| CN112653411B (en) * | 2020-12-15 | 2022-08-19 | 重庆西南集成电路设计有限责任公司 | Temperature compensation circuit and method for numerical control phase shift/digital attenuator |
| CN114265038A (en) * | 2021-11-22 | 2022-04-01 | 电子科技大学 | High-precision switch type phase-shifting unit with temperature compensation effect |
| CN114265038B (en) * | 2021-11-22 | 2024-02-09 | 电子科技大学 | High-precision switch type phase shifting unit with temperature compensation effect |
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