CN107146750B - A kind of electron gun down-lead bracket structure and its manufacturing method - Google Patents
A kind of electron gun down-lead bracket structure and its manufacturing method Download PDFInfo
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- CN107146750B CN107146750B CN201710447769.1A CN201710447769A CN107146750B CN 107146750 B CN107146750 B CN 107146750B CN 201710447769 A CN201710447769 A CN 201710447769A CN 107146750 B CN107146750 B CN 107146750B
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- insulator porcelain
- electron gun
- bracket structure
- lead bracket
- porcelain
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/027—Construction of the gun or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
Abstract
The present invention discloses a kind of electron gun down-lead bracket structure and its manufacturing method, electron gun down-lead bracket structure includes insulator porcelain (1) and angle bar (3), the insulator porcelain (1) is equipped with several holes for being used to install Mo-Re alloy wire (2), Mo-Re alloy wire (2) glaze is enclosed on insulator porcelain (1), and the both ends of insulator porcelain (1) are equipped with metallized treated metalization layer, metalization layer is equipped with electroless nickel layer；Angle bar (3) is welded to the both ends of insulator porcelain (1) by way of soldering.This kind of electron gun down-lead bracket structure and its manufacturing method with above structure pass through structure and process modification, guarantee that down-lead bracket structure has the advantages that firm welding degree height, anti-vibration, electron gun fitted position are easier to control, avoids causing pipe to be scrapped due to entire cathode assembly and/or angle bar fall off from anode plate.
Description
Technical field
The present invention relates to vacuum device electron gun manufacturing field, more particularly, to a kind of electron gun down-lead bracket structure and its
Manufacturing method.
Background technique
Terahertz frequency between microwave and it is infrared between, system takes into account the advantage of electronic system and optical system, quilt
It is described as the mankind after microwave, light wave and further recognizes the world, natural " third eyes ".It occupy this THz wave and causes people
Attention, THz devices technology obtains the concern and research of many experts of countries in the world related scientific research mechanism.
Existing strip beam electron gun down-lead bracket structure has 7 to run through as shown in Figure of description 1, on insulator porcelain
Fixing pin is installed in hole, has connect 7 Mo-Re alloy wires by glaze soldering and sealing respectively for supporting welding cathode assembly.Electron gun
The connection for assembling middle-jiao yang, function of the spleen and stomach pole plate and down-lead bracket is by welding dystectic tantalum piece angle between Mo-Re alloy wire and anode plate
Iron is come what is realized, and there are unreliabilities for this connection type structure, the reason is that, used Mo-Re alloy wire very thin
There is 0.5~0.6mm, tantalum piece angle bar is welded in Mo-Re alloy wire that difficulty is big, is easy to appear rosin joint, there are entire cathode assemblies
The case where falling off from anode plate；Secondly if any slight vibration when pipe work, tantalum piece angle bar is also easy to fall off from anode plate, shadow
It has rung electron gun electronics note track to change, has eventually led to pipe and scrap.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of electron gun lead aiming at the problems existing in the prior art
Supporting structure and its manufacturing method, the purpose is to guarantee that down-lead bracket structure has firm welding degree height, anti-vibration, electron gun dress
The advantages of being easier to control with size avoids leading to pipe report due to entire cathode assembly and/or angle bar fall off from anode plate
It is useless.
The technical scheme is that this kind of electron gun down-lead bracket structure includes insulator porcelain and angle bar, described is exhausted
Edge ceramics are equipped with several holes for being used to install Mo-Re alloy wire, and Mo-Re alloy wire seals glaze on insulator porcelain, and
The both ends of the insulator porcelain are equipped with metallized treated metalization layer, and metalization layer is equipped with electroless nickel layer；Institute
The angle bar stated is welded to the both ends of insulator porcelain by way of soldering.
The surface of the insulator porcelain is equipped with for increasing the surface shortest distance between two neighboring hole to mention
The groove structure of high insulating property.
The insulator porcelain by 99% Al2O3Ceramic powder compacting sintering is fabricated.
The angle bar is process using vacuum melting molybdenum sheet, and the thickness range of angle bar is 0.2~1mm, angle bar into
Row Nickel Plating Treatment.
A kind of manufacturing method for above-mentioned electron gun down-lead bracket structure includes:
1) cleaning of insulator porcelain: insulator porcelain is put into acetone soln, passes through ultrasonic cleaning surface and oil contaminant
30~40 minutes, the surface 2~5 minutes of insulator porcelain is then rinsed with deionized water, that is, completes cleaning；
2) cleaned insulator porcelain insulator porcelain biscuiting: is put into biscuiting in Muffle furnace, sintering temperature 500-
1000 DEG C, keep the temperature 10-60 minutes；
3) metallization of insulator porcelain: using molybdenum manganese metal technique, and the both ends of insulator porcelain are applied paste, thick
Degree controls between 40um~80um, and in an oven by coated and dried；
4) the sintering metal layer in hydrogen furnace, sintering temperature are 1000-2000 DEG C, keep the temperature 10-60 minutes；
5) it in 5 holes that Mo-Re alloy wire is inserted on insulator porcelain, and makes pottery in Mo-Re alloy wire and insulator
Porcelain junction applies glaze paste, and in an oven by coated and dried, oven temperature is (100 ± 20) DEG C；
6) it is sintered in hydrogen furnace, carries out Mo-Re alloy wire and connect with insulator porcelain glaze soldering and sealing, welding temperature 1000-
1500 DEG C, keep the temperature 0.1~5 minute；
7) to electroless nickel layer in the metalization layer of insulator porcelain, nickel layer thickness is controlled in 0.009mm~0.012mm；
8) nickel layer in hydrogen furnace on sintering insulated son ceramics, so that nickel adheres completely to the metallization of insulator porcelain
Layer surface, sintering temperature are 700-1200 DEG C, keep the temperature 2~15 minutes；
9) two angle bar are assembled in the both ends of insulator porcelain respectively, and place oxygen-free copper solder sheet, anaerobic spelter solder
Piece completes Welding with a thickness of 0.05mm~0.1mm in hydrogen furnace；
10) by Mo-Re alloy wire shaping, completion meets design requirement shape and size.
As a preferred solution of the present invention, insulator porcelain cleaned in step 2) is put into biscuiting in Muffle furnace,
The temperature of sintering is preferably (850 ± 20) DEG C, and soaking time is preferably 30 minutes.
Further, the sintering temperature of sintering metal layer is preferably (1450 ± 20) DEG C in hydrogen furnace in step 4),
Soaking time is preferably 30~50 minutes.
Further, the temperature that Mo-Re alloy wire and the soldering and sealing of insulator porcelain glaze connect in step 6) be preferably (1300 ±
20) DEG C, soaking time is preferably 0.5~2 minute.
Further, the nickel layer in step 8) in hydrogen furnace on sintering insulated son ceramic (1), sintering temperature are preferably
(990 ± 10) DEG C, soaking time are preferably 5~10 minutes.
This kind of electron gun down-lead bracket structure and its manufacturing method with above structure pass through structure and process modification, will
Outermost two Mo-Re alloy wires are got rid of in Figure of description 1, are no longer welded by tantalum piece angle bar and Mo-Re alloy wire
And entire electron gun structure is supported with anode plate welding, but take and first carry out at the both ends of insulator porcelain at metallization
Reason, again glaze seal Mo-Re alloy wire, and glaze seals laggard row metal layer Nickel Plating Treatment, finally passes through newly-designed molybdenum sheet angle bar
Brazing mode is welded on insulator porcelain part, is directly welded, is used with anode plate by molybdenum sheet angle bar in electron gun assembly
The welding effect that the down-lead bracket structure of this kind of structure reaches is very solid and reliable, eliminates problems of the prior art.
Detailed description of the invention
The present invention will be further explained below with reference to the attached drawings:
Fig. 1 is the structural schematic diagram of prior art electron gun down-lead bracket structure.
Fig. 2 is the structural schematic diagram of electron gun down-lead bracket structure of the present invention.
Fig. 3 is the A-A structural schematic diagram of structure shown in Fig. 2.
Fig. 4 is the B-B structural schematic diagram of structure shown in Fig. 2.
Fig. 5 is the V-V structural schematic diagram of structure shown in Fig. 2.
Fig. 6 is the manufacturing method flow chart of electron gun down-lead bracket structure of the present invention.
In figs. 1-6,1: insulator porcelain；2:Mo-Re alloy wire；3: angle bar.
Specific embodiment
Fig. 1 is the structural schematic diagram of prior art electron gun down-lead bracket structure, has 7 on the insulator porcelain of this kind of structure
A through hole installs fixing pin, has connect 7 Mo-Re alloy wires by glaze soldering and sealing respectively for supporting welding cathode assembly.
It is dystectic by welding between Mo-Re alloy wire and anode plate that electron gun, which assembles middle-jiao yang, function of the spleen and stomach pole plate and the connection of down-lead bracket,
Tantalum piece angle bar is come what is realized, and there are unreliabilities for this connection type structure, the reason is that, used Mo-Re alloy wire is non-
Often carefully only 0.5~0.6mm, tantalum piece angle bar are welded in Mo-Re alloy wire that difficulty is big, are easy to appear rosin joint, there are entire yin
The case where pole component falls off from anode plate；Secondly if any slight vibration when pipe work, tantalum piece angle bar is also easy from anode plate
It falls off, affects electron gun electronics note track and change, eventually lead to pipe and scrap.
Fig. 2 is the structural schematic diagram of electron gun down-lead bracket structure of the present invention, and Fig. 3,4,5 are structure shown in Fig. 2 respectively
A-A, B-B, V-V structural schematic diagram.The structure as shown in Fig. 2-5 combines it is found that this kind of electron gun down-lead bracket structure includes insulation
Sub- ceramics 1 and angle bar 3, insulator porcelain 1 are equipped with several holes for being used to install Mo-Re alloy wire 2,2 envelope of Mo-Re alloy wire
Glaze is on insulator porcelain 1, and the both ends of the insulator porcelain 1 are equipped with metallized treated metalization layer, metal
Change layer and is equipped with electroless nickel layer；The angle bar 3 is welded to the both ends of insulator porcelain 1 by way of soldering.
Insulator porcelain 1 is fabricated by 99% Al2O3 ceramic powder compacting sintering, and on the surface of insulator porcelain 1
Equipped with for increasing the surface shortest distance between two neighboring hole to improve the groove structure of insulation performance.Insulator porcelain 1
First effect be insulating effect, it is main include be to insulate between cathode, filament assembly, it is high between cathode filament component and anode
Pressure insulation；Second effect of insulator is to be mechanically fixed, anchored filament, cathode and anode plate.
It is inserted into the Mo-Re alloy wire 2 to match with its aperture in 5 holes among insulator porcelain 1 and carries out glaze soldering and sealing
Jail.The effect of Mo-Re alloy wire 2 is first is that fix electron gun structure, second is that the energization lead as electron gun.
Angle bar 3 is process using vacuum melting molybdenum sheet, and the thickness range of angle bar 3 is 0.2~1mm, and angle bar 3 is plated
Nickel processing.
Fig. 6 is the manufacturing method flow chart of electron gun down-lead bracket structure of the present invention.One kind being used for above-mentioned electron gun lead
The manufacturing method of supporting structure includes:
1) cleaning of insulator porcelain: insulator porcelain 1 is put into acetone soln, passes through ultrasonic cleaning surface and oil contaminant
30~40 minutes, the surface 2~5 minutes of insulator porcelain 1 is then rinsed with deionized water, that is, completes cleaning；
2) cleaned insulator porcelain 1 insulator porcelain biscuiting: is put into biscuiting in Muffle furnace, sintering temperature 500-
1000 DEG C, keep the temperature 10-60 minutes；
3) metallization of insulator porcelain: using molybdenum manganese metal technique, and the both ends of insulator porcelain 1 are applied paste,
Thickness control is between 40um~80um, and in an oven by coated and dried；
4) the sintering metal layer in hydrogen furnace, sintering temperature are 1000-2000 DEG C, keep the temperature 10-60 minutes；
5) in 5 holes that Mo-Re alloy wire 2 is inserted on insulator porcelain 1, and in Mo-Re alloy wire 2 and insulator
Ceramic 1 junction applies glaze paste, and in an oven by coated and dried, oven temperature is (100 ± 20) DEG C；
6) it is sintered in hydrogen furnace, carries out Mo-Re alloy wire 2 and connect with 1 glaze soldering and sealing of insulator porcelain, welding temperature is
1000-1500 DEG C, keep the temperature 0.1~5 minute；
7) to electroless nickel layer in the metalization layer of insulator porcelain 1, nickel layer thickness is controlled in 0.009mm~0.012mm；
8) nickel layer in hydrogen furnace on sintering insulated son ceramics 1, so that nickel adheres completely to the metal of insulator porcelain 1
Change layer surface, sintering temperature is 700-1200 DEG C, keeps the temperature 2~15 minutes；
9) two angle bar 3 are assembled in the both ends of insulator porcelain 1 respectively, and place oxygen-free copper solder sheet, anaerobic brazing
Material thickness is 0.05mm~0.1mm, and Welding is completed in hydrogen furnace；
10) by Mo-Re alloy wire shaping, completion meets design requirement shape and size.
As a kind of preferred embodiment of the present invention, cleaned insulator porcelain 1 is put into Muffle furnace plain in step 2)
It burns, the temperature of sintering is (850 ± 20) DEG C, and soaking time is 30 minutes.
In step 4) in hydrogen furnace sintering metal layer sintering temperature be (1450 ± 20) DEG C, soaking time be 30~
50 minutes.
The temperature that Mo-Re alloy wire 2 and 1 glaze soldering and sealing of insulator porcelain connect in step 6) is (1300 ± 20) DEG C, when heat preservation
Between be 0.5~2 minute.
Nickel layer in step 8) in hydrogen furnace on sintering insulated son ceramics 1, sintering temperature are (990 ± 10) DEG C, heat preservation
Time is 5~10 minutes.
This kind of electron gun down-lead bracket structure and its manufacturing method with above structure pass through structure and process modification, will
Outermost two Mo-Re alloy wires are got rid of in Figure of description 1, are no longer welded by tantalum piece angle bar and Mo-Re alloy wire
And entire electron gun structure is supported with anode plate welding, but take and first carry out at the both ends of insulator porcelain at metallization
Reason, again glaze seal Mo-Re alloy wire, and glaze seals laggard row metal layer Nickel Plating Treatment, finally passes through newly-designed molybdenum sheet angle bar
Brazing mode is welded on insulator porcelain part, is directly welded, is used with anode plate by molybdenum sheet angle bar in electron gun assembly
The welding effect that the down-lead bracket structure of this kind of structure reaches is very solid and reliable, eliminates problems of the prior art.
Claims (9)
1. a kind of electron gun down-lead bracket structure, it is characterised in that: the electron gun down-lead bracket structure includes insulator pottery
Porcelain (1) and angle bar (3), the insulator porcelain (1) are equipped with several holes for being used to install Mo-Re alloy wire (2), Mo-
Re alloy wire (2) glaze is enclosed on insulator porcelain (1), and the both ends of the insulator porcelain (1) are equipped with metallized processing
Metalization layer afterwards, metalization layer are equipped with electroless nickel layer；The angle bar (3) is welded to insulator pottery by way of soldering
The both ends of porcelain (1).
2. a kind of electron gun down-lead bracket structure according to claim 1, it is characterised in that: the insulator porcelain
(1) surface is equipped with for increasing the surface shortest distance between two neighboring hole to improve the groove structure of insulation performance.
3. a kind of electron gun down-lead bracket structure according to claim 2, it is characterised in that: the insulator porcelain
(1) by 99% Al2O3Ceramic powder compacting sintering is fabricated.
4. a kind of electron gun down-lead bracket structure described in any one of -3 claims according to claim 1, it is characterised in that: institute
The angle bar (3) stated is process using vacuum melting molybdenum sheet, and the thickness range of angle bar (3) is 0.2~1mm, and angle bar (3) carries out
Nickel Plating Treatment.
5. a kind of manufacturing method for electron gun down-lead bracket structure described in any one of claim 1-4 claim,
Be characterized in that: the manufacturing method includes,
1) cleaning of insulator porcelain: insulator porcelain (1) is put into acetone soln, ultrasonic cleaning surface and oil contaminant 30 is passed through
~40 minutes, the surface 2~5 minutes of insulator porcelain (1) is then rinsed with deionized water, that is, completes cleaning；
2) cleaned insulator porcelain (1) insulator porcelain biscuiting: is put into biscuiting in Muffle furnace, sintering temperature 500-
1000 DEG C, keep the temperature 10-60 minutes；
3) metallization of insulator porcelain: using molybdenum manganese metal technique, and the both ends of insulator porcelain (1) are applied paste, thick
Degree controls between 40um~80um, and in an oven by coated and dried；
4) the sintering metal layer in hydrogen furnace, sintering temperature are 1000-2000 DEG C, keep the temperature 10-60 minutes；
5) Mo-Re alloy wire (2) is inserted into 5 holes on insulator porcelain (1), and in Mo-Re alloy wire (2) and insulation
Sub- ceramics (1) junction applies glaze paste, and in an oven by coated and dried, oven temperature is (100 ± 20) DEG C；
6) it is sintered in hydrogen furnace, carries out Mo-Re alloy wire (2) and connect with insulator porcelain (1) glaze soldering and sealing, welding temperature is
1000-1500 DEG C, keep the temperature 0.1~5 minute；
7) to electroless nickel layer in the metalization layer of insulator porcelain (1), nickel layer thickness is controlled in 0.009mm~0.012mm；
8) nickel layer in hydrogen furnace on sintering insulated son ceramic (1), so that nickel adheres completely to the metal of insulator porcelain (1)
Change layer surface, sintering temperature is 700-1200 DEG C, keeps the temperature 2~15 minutes；
9) two angle bar (3) are assembled in the both ends of insulator porcelain (1) respectively, and place oxygen-free copper solder sheet, anaerobic brazing
Material thickness is 0.05mm~0.1mm, and Welding is completed in hydrogen furnace；
10) by Mo-Re alloy wire shaping, completion meets design requirement shape and size.
6. a kind of manufacturing method for electron gun down-lead bracket structure according to claim 5, it is characterised in that: step
2) cleaned insulator porcelain (1) is put into biscuiting in Muffle furnace in, and the temperature of sintering is (850 ± 20) DEG C, and soaking time is
30 minutes.
7. a kind of manufacturing method for electron gun down-lead bracket structure according to claim 6, it is characterised in that: step
4) sintering temperature of sintering metal layer is (1450 ± 20) DEG C in hydrogen furnace in, and soaking time is 30~50 minutes.
8. a kind of manufacturing method for electron gun down-lead bracket structure according to claim 7, it is characterised in that: step
6) temperature that Mo-Re alloy wire (2) and insulator porcelain (1) glaze soldering and sealing connect in is (1300 ± 20) DEG C, soaking time is 0.5~
2 minutes.
9. a kind of manufacturing method for electron gun down-lead bracket structure according to claim 8, it is characterised in that: step
8) nickel layer in hydrogen furnace on sintering insulated son ceramic (1), sintering temperature are (990 ± 10) DEG C, and soaking time is 5~10
Minute.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710447769.1A CN107146750B (en) | 2017-06-14 | 2017-06-14 | A kind of electron gun down-lead bracket structure and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710447769.1A CN107146750B (en) | 2017-06-14 | 2017-06-14 | A kind of electron gun down-lead bracket structure and its manufacturing method |
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| Publication Number | Publication Date |
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| CN107146750A CN107146750A (en) | 2017-09-08 |
| CN107146750B true CN107146750B (en) | 2019-01-29 |
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| CN109537013B (en) * | 2018-12-03 | 2020-12-04 | 上海雷迪埃电子有限公司 | Insulator electroplating method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203909161U (en) * | 2014-04-28 | 2014-10-29 | 安徽华东光电技术研究所 | Electron gun detecting device |
| CN105280461A (en) * | 2015-11-21 | 2016-01-27 | 安徽华东光电技术研究所 | Radiation electron heating electron gun |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007294148A (en) * | 2006-04-21 | 2007-11-08 | Mitsubishi Electric Corp | Electron gun for traveling-wave tube |
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2017
- 2017-06-14 CN CN201710447769.1A patent/CN107146750B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203909161U (en) * | 2014-04-28 | 2014-10-29 | 安徽华东光电技术研究所 | Electron gun detecting device |
| CN105280461A (en) * | 2015-11-21 | 2016-01-27 | 安徽华东光电技术研究所 | Radiation electron heating electron gun |
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Address after: 241000 No.01 Eshan Road, high tech Development Zone, Yijiang District, Wuhu City, Anhui Province Patentee after: ANHUI HUADONG PHOTOELECTRIC TECHNOLOGY INSTITUTE Co.,Ltd. Address before: 241000 Anhui Province, Wuhu city Yijiang District South high tech Development Zone Technology Park mansion Patentee before: Anhui Huadong Polytechnic Institute |
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