CN107141665A - A kind of high temperature modification resistive element and preparation method thereof - Google Patents
A kind of high temperature modification resistive element and preparation method thereof Download PDFInfo
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- C08K3/00—Use of inorganic substances as compounding ingredients
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- C08K3/00—Use of inorganic substances as compounding ingredients
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- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/027—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient consisting of conducting or semi-conducting material dispersed in a non-conductive organic material
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Abstract
The embodiment of the invention discloses a kind of high temperature modification resistive element and preparation method thereof, it is related to high temperature resistant resistance technical field.The high temperature modification resistive element is prepared from by following parts by weight raw material：40 65 parts of high molecular polymer, 25 50 parts of conductive filler, 1 10 parts of inorganic filler, 15 parts of coupling agent, 0.1 2 parts of antioxidant, 0.01 0.1 parts of dispersing aid.The present invention has raw material simple, and the obtained high temperature modification resistive element element of preparation, component is uniformly dispersed, higher proof voltage ability, it can be worked under the hot environments such as electric motor of automobile, with preferable stress levels, improve the reliability of device at high temperature under high pressure.
Description
Technical field
The present invention relates to high temperature resistant resistance technical field, more particularly to a kind of high temperature modification resistive element and preparation method thereof.
Background technology
Using conductive polymer composites as the semistor of base material, before and after critical transition temperature,
Resistivity is set to occur the change of several orders of magnitude, the i.e. rise for the environment temperature that PTC resistance can be used with it and increase, from
And electric current can be reduced or turned off at relatively high temperatures, excessively stream, overheat protector are played, at present, this kind of device is in various electricity
Largely used in line protection device, such as lithium ion battery, automobile motor.General, fill the crystalline polymers of conducting particles
Composite can show positive temperature coefficient PTC phenomenons, that is to say, that in relatively low temperature, and relatively low electricity is presented in this kind of conductor
Resistance rate, and when temperature is increased to up to more than high molecular polymer fusing point, resistivity can be raised rapidly.Current conventional polymeric material
Material includes polyethylene, polypropylene, polystyrene, EVA, EAA, EBA, and conductive filler includes carbon black, graphite, carbon fiber, nickel powder, copper
Powder, aluminium powder etc..
The technique that general manufacturing enterprise's manufacture thermistor powder is used at present is：Weighing, addition donor impurity ball milling are mixed
Material, drying, 1150 DEG C of pre-synthesis of briquetting, crushing, weighing, addition acceptor impurity and sintering aid ball mill mixing, addition clout amount
For 8% concentration be 10% PVA, mist projection granulating.Disperse uneven, grain size not by the resistance component of this technique productions
Even, side reaction coefficient is low, proof voltage poor performance, easily occurs the critical defects such as thermal breakdown when using.
The content of the invention
Embodiments of the invention provide a kind of high temperature modification resistive element and preparation method thereof, raw material is simple, and preparation is obtained
The high temperature modification resistive element element, component is uniformly dispersed, and higher proof voltage ability can be in hot environments such as electric motor of automobile
Lower work, with preferable stress levels, improves the reliability of device at high temperature under high pressure.
To reach above-mentioned purpose, embodiments of the invention are adopted the following technical scheme that：
Embodiments of the invention provide a kind of high temperature modification resistive element, including the raw material of following parts by weight is prepared from：It is high
40-65 parts of Molecularly Imprinted Polymer, 25-50 parts of conductive filler, 1-10 parts of inorganic filler, 1-5 parts of coupling agent, 0.1-2 parts of antioxidant, point
Dissipate 0.01-0.1 parts of auxiliary agent.
Further, a kind of described high temperature modification resistive element is that the raw materials of following parts by weight is prepared from：Macromolecule
50-60 parts of polymer, 30-40 parts of conductive filler, 5-8 parts of inorganic filler, 1-3 parts of coupling agent, 0.5-1 parts of antioxidant is scattered to help
0.03-0.08 parts of agent.
Further, the high molecular polymer is Kynoar, high density polyethylene (HDPE), ethylene-tetrafluoroethylene copolymerization
One or more mixtures in thing, ethylene-vinyl acetate copolymer.
Further, the conductive filler is carbon black, graphite, carbon fiber, metal dust, metallic fiber, anaerobic conduction pottery
One or more mixtures in porcelain powder.
Further, the inorganic filler is silver hydroxide or magnesium hydroxide.
Further, the coupling agent is metatitanic acid coupling agent or silane coupler.
Further, the antioxidant be one kind in hydroquinones, thiobisphenol, naphthylamines, diphenylamines, p-phenylenediamine or
A variety of mixtures.
Further, the dispersing aid is manganese dioxide, antimony oxide, the mixture of lithium carbonate.
Further, the dispersing aid is made up of the raw material of following parts by weight：40-60 parts of manganese dioxide, three oxygen
Change 40-60 parts of two antimony, 10-30 parts of lithium carbonate.
Present invention also offers a kind of preparation method of high temperature modification resistive element, including：
S1, all powders are well mixed, nanometer powder is ground to form in ethanol；
S2, the nanometer powder for obtaining step 1 add banbury and kneaded, and 200 DEG C -250 DEG C of melting temperature kneads 30-60
Minute, it is pressed into thin slice；
S3, the thin slice for obtaining step 2 obtain the high temperature modification resistive element by the chip of different size stroke various sizes.
A kind of high temperature modification resistance provided in an embodiment of the present invention and preparation method thereof, with advantages below：
（1）Preparation technology simple possible, low production cost；（2）Component is uniformly dispersed, and grain size is well-balanced, side reaction coefficient is high；
（3）Pressure-resistant high temperature resistant, fade performance is preferable.
Embodiment
To make those skilled in the art more fully understand technical scheme, with reference to embodiment to this
Invention is described in further detail.
Embodiment 1
A kind of high temperature modification resistive element, is prepared from by the raw material of following parts by weight：40-50 parts of Kynoar, carbon black 25-
30 parts, 1-5 parts of silver hydroxide, 1-2 parts of silane coupler, 0.1-0.5 parts of hydroquinones, 0.01-0.04 parts of manganese dioxide, three oxygen
Change 0.01-0.04 parts of two antimony, 0.01-0.02 parts of lithium carbonate.
A kind of high temperature modification resistive element preparation method, including：
S1, all powders are well mixed, nanometer powder is ground to form in ethanol；
S2, the nanometer powder for obtaining step 1 add banbury and kneaded, and 200 DEG C of melting temperature is kneaded 60 minutes, is pressed into
Thin slice；
S3, the thin slice for obtaining step 2 obtain the high temperature modification resistive element by the chip of different size stroke various sizes.
Embodiment 2
A kind of high temperature modification resistive element, is prepared from by the raw material of following parts by weight：40-50 parts of Kynoar, carbon black 25-
30 parts, 1-5 parts of silver hydroxide, 1-2 parts of silane coupler, 0.1-0.5 parts of hydroquinones, 0.01-0.04 parts of manganese dioxide, three oxygen
Change 0.01-0.04 parts of two antimony, 0.01-0.02 parts of lithium carbonate.
A kind of high temperature modification resistive element preparation method, including：
S1, all powders are well mixed, nanometer powder is ground to form in ethanol；
S2, the nanometer powder for obtaining step 1 add banbury and kneaded, and 250 DEG C of melting temperature is kneaded 30 minutes, is pressed into
Thin slice；
S3, the thin slice for obtaining step 2 obtain the high temperature modification resistive element by the chip of different size stroke various sizes.
Embodiment 3
A kind of high temperature modification resistive element, is prepared from by the raw material of following parts by weight：50-60 parts of Kynoar, carbon black 30-
40 parts, 5-8 parts of silver hydroxide, 2-3 parts of silane coupler, 0.5-1 parts of hydroquinones, 0.01-0.04 parts of manganese dioxide, three oxidations
Two 0.01-0.04 parts of antimony, 0.01-0.02 parts of lithium carbonate.
A kind of high temperature modification resistive element preparation method, including：
S1, all powders are well mixed, nanometer powder is ground to form in ethanol；
S2, the nanometer powder for obtaining step 1 add banbury and kneaded, and 200 DEG C of melting temperature is kneaded 60 minutes, is pressed into
Thin slice；
S3, the thin slice for obtaining step 2 obtain the high temperature modification resistive element by the chip of different size stroke various sizes.
Embodiment 4
A kind of high temperature modification resistive element, is prepared from by the raw material of following parts by weight：50-60 parts of Kynoar, carbon black 30-
40 parts, 5-8 parts of silver hydroxide, 2-3 parts of silane coupler, 0.5-1 parts of hydroquinones, 0.01-0.04 parts of manganese dioxide, three oxidations
Two 0.01-0.04 parts of antimony, 0.01-0.02 parts of lithium carbonate.
A kind of high temperature modification resistive element preparation method, including：
S1, all powders are well mixed, nanometer powder is ground to form in ethanol；
S2, the nanometer powder for obtaining step 1 add banbury and kneaded, and 250 DEG C of melting temperature is kneaded 30 minutes, is pressed into
Thin slice；
S3, the thin slice for obtaining step 2 obtain the high temperature modification resistive element by the chip of different size stroke various sizes.
Embodiment 5
A kind of high temperature modification resistive element, is prepared from by the raw material of following parts by weight：60-65 parts of Kynoar, carbon black 40-
50 parts, 8-10 parts of silver hydroxide, 3-5 parts of silane coupler, 1-2 parts of hydroquinones, 0.03-0.08 parts of manganese dioxide, three oxidations
Two 0.03-0.08 parts of antimony, 0.02-0.04 parts of lithium carbonate.
A kind of high temperature modification resistive element preparation method, including：
S1, all powders are well mixed, nanometer powder is ground to form in ethanol；
S2, the nanometer powder for obtaining step 1 add banbury and kneaded, and 200 DEG C of melting temperature is kneaded 60 minutes, is pressed into
Thin slice；
S3, the thin slice for obtaining step 2 obtain the high temperature modification resistive element by the chip of different size stroke various sizes.
Embodiment 6
A kind of high temperature modification resistive element, is prepared from by the raw material of following parts by weight：60-65 parts of Kynoar, carbon black 40-
50 parts, 8-10 parts of silver hydroxide, 3-5 parts of silane coupler, 1-2 parts of hydroquinones, 0.03-0.08 parts of manganese dioxide, three oxidations
Two 0.03-0.08 parts of antimony, 0.02-0.04 parts of lithium carbonate.
A kind of high temperature modification resistive element preparation method, including：
S1, all powders are well mixed, nanometer powder is ground to form in ethanol；
S2, the nanometer powder for obtaining step 1 add banbury and kneaded, and 250 DEG C of melting temperature is kneaded 30 minutes, is pressed into
Thin slice；
S3, the thin slice for obtaining step 2 obtain the high temperature modification resistive element by the chip of different size stroke various sizes.
Each embodiment in this specification is described by the way of progressive, identical similar portion between each embodiment
Divide mutually referring to what each embodiment was stressed is the difference with other embodiment.It is real especially for equipment
Apply for example, because it is substantially similar to embodiment of the method, so describing fairly simple, related part is referring to embodiment of the method
Part explanation.The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited to
This, any one skilled in the art the invention discloses technical scope in, the change that can readily occur in or replace
Change, should all be included within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of claim
Enclose and be defined.
Claims (10)
1. a kind of high temperature modification resistive element, it is characterised in that the raw material including following parts by weight is prepared from：Polyphosphazene polymer
40-65 parts of compound, 25-50 parts of conductive filler, 1-10 parts of inorganic filler, 1-5 parts of coupling agent, 0.1-2 parts of antioxidant, dispersing aid
0.01-0.1 parts.
2. a kind of high temperature modification resistive element according to claim 1, it is characterised in that include the raw material of following parts by weight
It is prepared from：50-60 parts of high molecular polymer, 30-40 parts of conductive filler, 5-8 parts of inorganic filler, 1-3 parts of coupling agent, antioxidant
0.5-1 parts, 0.03-0.08 parts of dispersing aid.
3. a kind of high temperature modification resistive element according to claim 1, it is characterised in that the high molecular polymer is poly- inclined
One or more mixing in PVF, high density polyethylene (HDPE), ethylene-tetrafluoroethylene copolymer, ethylene-vinyl acetate copolymer
Thing.
4. a kind of high temperature modification resistive element according to claim 1, it is characterised in that the conductive filler is carbon black, stone
One or more mixtures in ink, carbon fiber, metal dust, metallic fiber, anaerobic conductivity ceramics powder.
5. a kind of high temperature modification resistive element according to claim 1, it is characterised in that the inorganic filler is silver hydroxide
Or magnesium hydroxide.
6. a kind of high temperature modification resistive element according to claim 1, it is characterised in that the coupling agent is metatitanic acid coupling agent
Or silane coupler.
7. a kind of high temperature modification resistive element according to claim 1, it is characterised in that the antioxidant be hydroquinones,
One or more mixtures in thiobisphenol, naphthylamines, diphenylamines, p-phenylenediamine.
8. a kind of high temperature modification resistive element according to claim 1, it is characterised in that the dispersing aid is titanium dioxide
Manganese, antimony oxide, the mixture of lithium carbonate.
9. a kind of high temperature modification resistive element according to claim 1, it is characterised in that the dispersing aid is by following heavy
Measure the raw material composition of number：40-60 parts of manganese dioxide, 40-60 parts of antimony oxide, 10-30 parts of lithium carbonate.
10. a kind of high temperature modification resistive element preparation method, it is characterised in that comprise the following steps：
S1, all powders are well mixed, nanometer powder is ground to form in ethanol；
S2, the nanometer powder for obtaining step 1 add banbury and kneaded, 200-250 DEG C of melting temperature, 30-60 points of mixing
Clock, is pressed into thin slice；
S3, the thin slice for obtaining step 2 obtain the high temperature modification resistive element by the chip of different size stroke various sizes.
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| CN201710320623.0A CN107141665A (en) | 2017-05-09 | 2017-05-09 | A kind of high temperature modification resistive element and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109385001A (en) * | 2018-11-14 | 2019-02-26 | 深圳市万瑞和电子有限公司 | PPTC self-recovery fuse for the voltage of resistance to 600V and preparation method thereof |
| CN109509599A (en) * | 2017-09-15 | 2019-03-22 | 聚鼎科技股份有限公司 | Over-current protecting element |
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| CN102280233A (en) * | 2011-05-31 | 2011-12-14 | 芜湖凯龙电子科技有限公司 | High-temperature macromolecule PTC (positive temperature coefficient) thermal resistor and manufacturing method thereof |
| CN102807367A (en) * | 2012-08-20 | 2012-12-05 | 刘小强 | Method for manufacturing PTC (positive temperature coefficient) ceramic |
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| US6359544B1 (en) * | 2000-10-10 | 2002-03-19 | Therm-O-Disc Incorporated | Conductive polymer compositions containing surface treated kaolin clay and devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109509599A (en) * | 2017-09-15 | 2019-03-22 | 聚鼎科技股份有限公司 | Over-current protecting element |
| CN109509599B (en) * | 2017-09-15 | 2021-04-09 | 聚鼎科技股份有限公司 | Overcurrent protection element |
| CN109385001A (en) * | 2018-11-14 | 2019-02-26 | 深圳市万瑞和电子有限公司 | PPTC self-recovery fuse for the voltage of resistance to 600V and preparation method thereof |
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