CN107134539B - A kind of highly reliable OLED device and preparation method thereof for lighting screen body - Google Patents
A kind of highly reliable OLED device and preparation method thereof for lighting screen body Download PDFInfo
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- CN107134539B CN107134539B CN201710544241.6A CN201710544241A CN107134539B CN 107134539 B CN107134539 B CN 107134539B CN 201710544241 A CN201710544241 A CN 201710544241A CN 107134539 B CN107134539 B CN 107134539B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
The invention belongs to OLED device technical fields, and in particular to a kind of highly reliable OLED device for lighting screen body, and preparation method is further disclosed.Highly reliable OLED device of the present invention for lighting screen body, on the basis of existing structure device, the current-limiting layer formed by introducing selected material, to limit the current value by specific pixel, simultaneously further through corresponding second plate layer being arranged on the current-limiting layer to realize the matching of work function, on the one hand increase electric current injection, while reducing the voltage because of caused by interfactial work Functions mismatch and rising, can effectively avoid the unsteady phenomenas such as screen body drain electricity.
Description
Technical field
The invention belongs to OLED device technical fields, and in particular to a kind of highly reliable OLED device for lighting screen body,
And preparation method is further disclosed.
Background technique
OLED (Organic Light Emitting Display, organic light emitting display) refers to organic semiconducting materials
With luminescent material under electric field driven, the phenomenon that injection by carrier with composite guide photoluminescence.Its typical organic electroluminescence hair
Optical device structure includes that the first electrode and second of the anode and the cathode as electron injection that are used as hole injection is arranged in
Organic electroluminescent media between electrode.Its principle is to use ito transparent electrode and metal electrode respectively as the anode of device
And cathode, under certain voltage driving, electrons and holes are injected into electron and hole transport layer, electronics from cathode and anode respectively
Pass through electron and hole transport layer respectively with hole and move to luminescent layer, and meet in luminescent layer, form exciton and makes to shine
Molecule excitation, the latter issue visible light by radiative relaxation.Radiant light can be from ITO unilateral observation to metal electrode film is simultaneously
Also play the effect in reflecting layer.Display is made and is referred to as organic light emitting display according to this principle of luminosity, is also OLED
Display.In addition to generally screen body application, OLED can also be applied to lighting area, but relatively because of lighting screen bulk area
Greatly, it is easy to appear point defect.
Shown in the defect enlarged drawing provided as shown in figure 1 (100um × 100um), what conventional OLED device was easy to occur is lacked
Falling into is small dim spot or bright spot of the size in 1um or so.Usual this defect is caused positive and negative since particle is in anode surface
Extremely part causes with the presence of leakage current, and current convergence causes entire lighting screen body to fail to the defect point.
In some organic electroluminescence devices (OLED) design, as disclosed one kind in Chinese patent CN101960639A
The scheme to be solved the above problems using short reduction layer proposed using mixed oxide as preventing defect layer, can be
The drawbacks described above of OLED device is solved the problems, such as to a certain extent.But the main purpose of the short reduction layer designed in above scheme is
Increase resistance, it is therefore desirable to adjust suitable resistivity, while increased short reduction layer has since it is desired that with there is base's matching
And have to meet appropriate work function, this has biggish difficulty in selection, also limits application effect to a certain extent.
Summary of the invention
For this purpose, technical problem to be solved by the present invention lies in provide a kind of highly reliable OLED device for lighting screen body
Part, to solve the problems, such as OLED illuminating device screen volume defect in the prior art.
In order to solve the above technical problems, a kind of highly reliable OLED device for lighting screen body of the present invention, including
Substrate, and anode layer, organic luminous layer and cathode layer on the substrate are sequentially formed, the anode layer is along close to described
Orientation substrate successively includes first anode layer, current-limiting layer and second plate layer.
The surface resistivity of the current-limiting layer is 500-10000 Ω/.
The surface resistivity of the current-limiting layer is 1000-5000 Ω/.
The material for forming the current-limiting layer includes metal oxide, conducting polymer or resin.
The material for forming the current-limiting layer includes PMMA doping oxide, tungsten oxide, aluminium oxide-silicon oxide or Meh-
ppv。
Surface resistance<20 Ω/ of the first anode layer, the material for forming the second plate layer is work function>4.5eV
Metal oxide, metal or organic polymer material.
The second plate layer is consistent with the figure of the first anode layer.
The anode layer and the organic luminous layer of the cathode layer intersection region form screen body light emitting pixel, second sun
The light emitting pixel structure of pole layer is divided into several subpixel areas less than visual range, each institute according to its concrete application field
The area for stating pixel region is (100-1000) μ m (100-1000) μm.
Each subpixel area is divided by rule and in regularly arranged, and it is independent of each other include hexagonal structure, it is straight
Angle triangular structure, square structure or irregular graphic structure.
The device further includes hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer.
The invention also discloses a kind of methods for preparing the highly reliable OLED device for lighting screen body, including such as
Lower step:
(1) the selected substrate is made according to prior art conventional method, and forms selected first anode layer;
(2) current limit of selected material is prepared in the first anode layer surface according to prior art conventional method
Layer;
(3) the second plate layer is prepared in the current limit layer surface according to prior art conventional method, and ensured
The first anode layer is consistent with the figure of the second plate layer;
(4) organic function layer and the cathode layer is conventionally made, and encapsulates the preparation for completing screen body.
The method also includes the structures and arrangement mode according to the selected subpixel area, to the second plate
The step of layer is split.
The method also includes be conventionally made the hole injection layer, hole transmission layer, electron transfer layer and/
Or the step of electron injecting layer.
Highly reliable OLED device of the present invention for lighting screen body passes through introducing on the basis of existing structure device
The current-limiting layer that selected material is formed, to limit the current value by specific pixel, while further through in the current limit
Corresponding second plate layer is set on layer to realize the matching of work function, on the one hand increases electric current injection, while reducing because of interface
Voltage caused by work function mismatch rises, and can effectively avoid the unsteady phenomenas such as screen body drain electricity.On this basis, of the invention
The device does the resistance setting of the current-limiting layer further through the specific operating brightness of PMOLED and operating current is directed to
Detailed design optimization, to ensure to ensure that the operating voltage and efficiency of screen body while reducing defect.
Highly reliable passive organic electroluminescent device of the present invention, by carrying out piecemeal to anode pixels, control passes through
The leakage current of single latent defect point, the generation of defect is reduced with this;And by predetermined partition size, control visual in people's vision
Within scale, so that while ensuring to shield body stability, and the external sight of screen and visual effect will not be had an impact.
Detailed description of the invention
In order to make the content of the present invention more clearly understood, it below according to specific embodiments of the present invention and combines
Attached drawing, the present invention is described in further detail, wherein
Fig. 1 is OLED lighting screen defect enlarged drawing;
Fig. 2 is that dot structure divides schematic diagram and partial enlarged view in embodiment 4.
Specific embodiment
Embodiment 1
It is used for the highly reliable OLED device of lighting screen body, including substrate described in the present embodiment, and is sequentially formed at described
Anode layer, organic luminous layer and cathode layer on substrate, the anode layer successively include the first sun along the close orientation substrate
Pole layer, current-limiting layer and second plate layer.
The current-limiting layer is formed by metal oxide materials (tungsten oxide and silica), and by adjusting the ratio of the two
Example makes 1000 Ω of its surface resistance/.
Highly reliable organic electroluminescent luminous screen body described in the present embodiment, is prepared as follows:
Select ITO/MoAlMo substrate, by known method gluing, exposure, development, etching method, prepare respectively
MoAlMo figure and ITO pattern;
Electric current limit is prepared on the surface ITO by sputtering 30nm tungsten oxide and oxidation titanium-silicon mixed oxide (ratio 1:1) method
Preparative layer;
On aforesaid substrate surface, sputtering 2nm thick ito layer is coincide as second plate, figure and the first anode;
By way of known method vacuum evaporation, hole injection layer (m-MTDATA doping 2% is prepared in aforesaid substrate
F4tcnq), hole transmission layer (NPB), organic luminous layer (Alq3: C545T), electron transfer layer (Alq3), electron injecting layer
(LiF), cathode (Al) etc., and encapsulate.
Embodiment 2
It is used for the highly reliable OLED device of lighting screen body, including substrate described in the present embodiment, and is sequentially formed at described
Anode layer, organic luminous layer and cathode layer on substrate, the anode layer successively include the first sun along the close orientation substrate
Pole layer, current-limiting layer and second plate layer.
The current-limiting layer is formed by resin doping oxide (polymetylmethacrylate: zinc oxide) material,
And make 1000 Ω of its surface resistance/ by adjusting its ratio.
Highly reliable organic electroluminescent luminous screen body described in the present embodiment, is prepared as follows:
Select ITO/MoAlMo substrate, by gluing, exposure, development, etching method, prepare respectively MoAlMo figure and
ITO pattern;
Current-limiting layer is prepared on the surface ITO by coating, baking method;
On aforesaid substrate surface, sputtering 2nm thickness tungsten oxide layer is coincide as second plate, figure and the first anode;
By way of vacuum evaporation, hole injection layer (m-MTDATA adulterates 2%F4tcnq), sky are prepared in aforesaid substrate
Cave transport layer (NPB), organic luminous layer (Alq3: C545T), electron transfer layer (Alq3), electron injecting layer (LiF), cathode (Al)
Deng, and encapsulate.
Embodiment 3
It is used for the highly reliable OLED device of lighting screen body, including substrate described in the present embodiment, and is sequentially formed at described
Anode layer, organic luminous layer and cathode layer on substrate, the anode layer successively include the first sun along the close orientation substrate
Pole layer, current-limiting layer and second plate layer.
The current-limiting layer is formed by metal oxide materials (tungsten oxide is mixed with silica), and by adjusting its ratio
Example makes surface resistance be 1000 Ω/.
Highly reliable organic electroluminescent luminous screen body described in the present embodiment, is prepared as follows:
Select ITO/MoAlMo substrate, by gluing, exposure, development, etching method, prepare respectively MoAlMo figure and
ITO pattern;
Current-limiting layer is prepared on the surface ITO by sputtering tungsten oxide and oxidation titanium-silicon mixed oxide method;
On aforesaid substrate surface, sputtering 20nm thick ito layer is coincide as second plate, figure and the first anode;
By way of vacuum evaporation, hole injection layer (m-MTDATA adulterates 2%F4tcnq), sky are prepared in aforesaid substrate
Cave transport layer (NPB), organic luminous layer (Alq3: C545T), electron transfer layer (Alq3), electron injecting layer (LiF), cathode (Al)
Deng, and encapsulate.
Embodiment 4
The structure of highly reliable OLED device described in the present embodiment for lighting screen body is same as Example 3, and difference is only
It is, the dot structure of the screen body is divided into several pixel regions less than visual range, the face of each pixel region
Product is 100um × 100 μm.Each dot structure is divided into several pixel regions in equal size, and in regularly arranged, is divided between cutting
20um。
Pixel segmentation is mainly realized by segmentation second plate layer (ITO layer of 20nm), because of the transverse direction of current-limiting layer
Surface resistance is larger, can not have to ignore transverse current, preparation method is the same as embodiment 1.
Comparative example 1
The structure of OLED described in this comparative example is the structure of the prior art routine, and prepared by each layer and material is with embodiment 1,
Its difference is only that without containing the current-limiting layer and second plate layer.
Comparative example 2
This comparative example device architecture is identical with embodiment 1, and difference is only that after having prepared current-limiting layer, without second
Anode layer.
Experimental example
It detects, and is recorded in down according to device performance of the art methods to each embodiment and comparative example
Table 1.
Each device performance detection data of table 1
Number | Screen intensity (cd/m2) | Driving voltage (V) | Point defect quantity (counts 500 screen bodies) |
Embodiment 1 | 3000 | 6.3 | 7 |
Embodiment 2 | 3000 | 6.2 | 5 |
Embodiment 3 | 3000 | 6.1 | 8 |
Embodiment 4 | 3000 | 5.9 | 9 |
Comparative example 1 | 3000 | 6.1 | 126 |
Comparative example 2 | 3000 | 6.8 | 9 |
It can be seen that device of the present invention by introducing current-limiting layer from upper table data, the defect that screen body is made is bright
It is aobvious to reduce;Meanwhile it can be seen that device of the present invention by introducing the second sun by the data of comparative example 2 and embodiment 2,4
Pole layer, so that the driving voltage of obtained device is substantially reduced.
Obviously, above-described embodiment is only intended to clearly illustrate example, and does not limit the embodiments.For
For those of ordinary skill in the art, other various forms of variations or change can also be made on the basis of the above description
It is dynamic.There is no necessity and possibility to exhaust all the enbodiments.And obvious variation extended from this or change
It moves still within the protection scope of the invention.
Claims (9)
1. a kind of highly reliable OLED device for lighting screen body, including substrate, and sequentially form sun on the substrate
Pole layer, organic luminous layer and cathode layer, which is characterized in that the anode layer successively includes the first sun along the close orientation substrate
Pole layer, current-limiting layer and second plate layer;
The anode layer and the organic luminous layer of the cathode layer intersection region form screen body light emitting pixel, the second plate layer
Light emitting pixel structure several subpixel areas less than visual range, each picture are divided into according to its concrete application field
The area in plain region is (100-1000) μ m (100-1000) μm.
2. the highly reliable OLED device according to claim 1 for lighting screen body, which is characterized in that the current limit
The surface resistivity of layer is 500-10000 Ω/.
3. the highly reliable OLED device according to claim 1 for lighting screen body, which is characterized in that form the electric current
The material of limiting layer includes metal oxide, conducting polymer or resin.
4. the highly reliable OLED device according to claim 3 for lighting screen body, which is characterized in that form the electric current
The material of limiting layer includes PMMA doping oxide, tungsten oxide, aluminium oxide-silicon oxide or Meh-ppv.
5. the highly reliable OLED device according to claim 1-4 for lighting screen body, which is characterized in that described
The surface resistance of first anode layer<20 Ω/ forms the material of the second plate layer as the oxidation of work function>4.5eV metal
Object, metal or organic polymer material.
6. being used for the highly reliable OLED device of lighting screen body according to claim 5, which is characterized in that second sun
Pole layer is consistent with the figure of the first anode layer.
7. the highly reliable OLED device according to claim 6 for lighting screen body, which is characterized in that each sub-pixel
Divided by rule and in regularly arranged and independent of each other including hexagonal structure, triangular structure of right angle or square in region
Structure.
8. a kind of method for preparing the described in any item highly reliable OLED device for lighting screen body of claim 1-7, special
Sign is, includes the following steps:
(1) the selected substrate is made according to prior art conventional method, and forms selected first anode layer;
(2) current-limiting layer of selected material is prepared in the first anode layer surface according to prior art conventional method;
(3) the second plate layer is prepared in the current limit layer surface according to prior art conventional method, and ensured described
First anode layer is consistent with the figure of the second plate layer;
(4) organic function layer and the cathode layer is conventionally made, and encapsulates the preparation for completing screen body.
9. the method described in preparation according to claim 8 for the highly reliable OLED device of lighting screen body, feature
It is, the method also includes the structures and arrangement mode according to the selected subpixel area, to the second plate layer
The step of being split.
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US7183707B2 (en) * | 2004-04-12 | 2007-02-27 | Eastman Kodak Company | OLED device with short reduction |
KR100696587B1 (en) * | 2005-06-15 | 2007-03-20 | 엘지전자 주식회사 | Organic electroluminescent device |
KR100646974B1 (en) * | 2005-10-20 | 2006-11-23 | 삼성에스디아이 주식회사 | Organic light emitting device and fabricating method thereof |
US7911133B2 (en) * | 2007-05-10 | 2011-03-22 | Global Oled Technology Llc | Electroluminescent device having improved light output |
US20090220680A1 (en) * | 2008-02-29 | 2009-09-03 | Winters Dustin L | Oled device with short reduction |
KR101689336B1 (en) * | 2010-06-30 | 2016-12-26 | 삼성디스플레이 주식회사 | Organic Light Emitting Diode Display |
CN104253242B (en) * | 2014-09-30 | 2017-01-25 | 合肥鑫晟光电科技有限公司 | Organic electroluminescent device, production method thereof and display with same |
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