CN107134505B - A kind of method that light generates thermionic current - Google Patents
A kind of method that light generates thermionic current Download PDFInfo
- Publication number
- CN107134505B CN107134505B CN201710221511.XA CN201710221511A CN107134505B CN 107134505 B CN107134505 B CN 107134505B CN 201710221511 A CN201710221511 A CN 201710221511A CN 107134505 B CN107134505 B CN 107134505B
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- China
- Prior art keywords
- copper foil
- thermionic current
- film
- triangle copper
- angle
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- 238000000034 method Methods 0.000 title claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000011889 copper foil Substances 0.000 claims abstract description 39
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000004411 aluminium Substances 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011787 zinc oxide Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- 238000005036 potential barrier Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 21
- 229960001296 zinc oxide Drugs 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of methods that light generates thermionic current, this method utilizes the physical contact between triangle copper foil simple and easy to get and the doped zinc oxide aluminium film for being easy preparation, then the top of the horn of he-ne laser irradiation triangle copper foil and film surface contact angle is utilized, copper foil surface is excited to generate surface plasma excimer, the thermoelectron of high energy is generated in copper foil surface by the electromagnetic attenuation of surface plasma, by potential barrier suitable between metallic copper and semiconductor, thermionic current is generated.The present invention passes through the angle of adjusting triangle shape copper foil and film surface contact angle, the light conversion thermionic current of different efficiency can be realized, method is simple, is easily integrated.
Description
Technical field
The invention belongs to integrated opto-electronic technical fields, and in particular to a method of convert light to electricity.
Background technique
Convert light energy into electric energy technology have it is important, be widely applied, as solar-energy photo-voltaic cell, photoelectricity visit
Survey, photocatalysis etc..
Traditional method for converting light to electricity is all based on the p-n junction technology of semiconductor, which needs using doping
Method prepare N-shaped and p-type semiconductor material to form pn-junction, and to the quality requirement of material height.The principle of the technology is
Semiconductor material absorbs light, generates electrons and holes pair, and the effect of p-n junction internal electric field separates electrons and holes, externally generates
Potential or electric current.The technology is there are some disadvantages, and such as structure is complicated, making step is more, it is desirable that expensive equipment and to environment
Clean level requires height, causes element manufacturing at high cost, and the photoelectric device for being also unfavorable for height is integrated.
Recently, it has been proposed that nano-metal particle (such as Au or Ag)/semiconductor Schotty diode structure is realized
Photoelectric conversion.But in this method, the preparation of nano-metal particle is still complicated and at high cost, and photoelectric conversion efficiency is not also high.
Seek to convert light energy into the new method of electric energy to simplify device architecture, reduce material and element manufacturing cost, mention
High device photoelectric transfer efficiency and the integrated level for improving device are always the pursuit of scientific and technological circle and industry.
Summary of the invention
Technical problem to be solved by the present invention lies in solve above-mentioned general semiconductor p-n junction to make photoelectric conversion device institute
There are the problem of, provide and a kind of be simply easy to make and integrated photoelectric conversion method, i.e. light generate thermoelectron on metal
And the method for generating electric current.
Solving technical solution used by above-mentioned technical problem is: depositing upper one layer by magnetron sputtering on a glass substrate
Doped zinc oxide aluminium film, and a piece of triangle copper foil is vertically found in film surface, make the top of the horn at any one angle of triangle copper foil
It is contacted with film surface, then uses the top of the horn of he-ne laser irradiation triangle copper foil and film surface contact angle, that is, can produce heat
Electronic current.
The angle of above-mentioned triangle copper foil and film surface contact angle is preferably 10 °~40 °, and further preferred triangle
The angle of maximum angular in copper foil is no more than 90 °.
Above-mentioned triangle copper foil with a thickness of 6~12 μm.
Above-mentioned doped zinc oxide aluminium film with a thickness of 80~200nm.
The present invention further preferably deposits one layer of CuO film in triangle copper foil surface, and triangle copper foil surface is heavy
The thickness of long-pending CuO film is preferably 5~20nm.
The present invention is using simple triangle copper foil and the physical contact being easy between the doped zinc oxide aluminium film prepared, so
The top of the horn for utilizing laser irradiation triangle copper foil and film surface contact angle afterwards, according to triangle copper foil and film surface contact angle
Angle it is different, the ability for converting light into thermionic current is different, and the efficiency of photoelectric conversion is also different.
The structure devices for the photoelectric conversion that the present invention is constituted using doped zinc oxide aluminium film and triangle copper foil, in the device
In, the top of the horn of triangle copper foil Yu doped zinc oxide aluminium film surface contact angle is radiated at by light, excitating surface plasma swashs
Member and the thermoelectron for generating high energy on copper metallic face by the electromagnetic attenuation of surface plasma, these energetic hot electrons are got over
The potential barrier between metallic copper and doped zinc oxide aluminium film is crossed, photoelectric current is generated.
Detailed description of the invention
Fig. 1 is the device junction composition of 1 photoelectric conversion of embodiment, wherein 1 is glass substrate, 2 be doped zinc oxide aluminium film, 3
It is isosceles triangle copper foil, 4 be laser facula.
Specific embodiment
The present invention is described in more detail with reference to the accompanying drawings and examples, but the present invention is not limited only to these implementations
Example.
Embodiment 1
By glass substrate deionized water and mass fraction be 30% aqueous hydrogen peroxide solution, mass fraction be 30% ammonia
After the mixed liquor cleaning that the volume ratio of water aqueous solution is 3:1, then again by glass substrate successively in ethyl alcohol, acetone, isopropanol
Each ultrasonic cleaning 10 minutes, with being dried with nitrogen；The glass substrate cleaned up is fixed on substrate to drag, then by doped zinc oxide
Aluminium target is sent in the settling chamber of magnetron sputtering depositing device by manipulator.Settling chamber is vacuumized with mechanical pump and molecular pump
To 1 × 10-4Pa, the distance for adjusting glass substrate and doped zinc oxide aluminium target is 6cm, and glass substrate is then heated to 400 DEG C, is connect
Opening argon gas breather valve, and open mass flowmenter, control argon flow is 20sccm, starts deposition doping 2wt% aluminium
Zinc-oxide film, the laser power of deposition are 40W, and sedimentation time is 1 hour, and after deposition, cooled to room temperature is obtained
With a thickness of the doped zinc oxide aluminium film of 100nm.As shown in Figure 1, by oxygen is vertically stood on a thickness of 10 μm of isosceles triangle copper foil
Change zinc to mix in aluminium film, contacts the apex angle of isosceles triangle copper foil with film surface (physical contact), isosceles triangle copper foil
Apex angle be 10 °, the bottom edge of isosceles triangle copper foil is connected with doped zinc oxide aluminium film with conducting wire, and connects on conducting wire
Ammeter, with the top of the horn part for the he-ne laser irradiation isosceles triangle copper foil apex angle that diameter is 2mm, power is 5mW, generation
Thermionic current is 0.54nA.
Embodiment 2
In the present embodiment, the apex angle of isosceles triangle copper foil is 20 °, other steps are same as Example 1, the thermoelectricity of generation
Electron current is 0.48nA.
Embodiment 3
In the present embodiment, the apex angle of isosceles triangle copper foil is 40 °, other steps are same as Example 1, the thermoelectricity of generation
Electron current is 0.32nA.
Embodiment 4
In the present embodiment, by isosceles triangle copper foil with deionized water ultrasound 30 minutes, then with being dried with nitrogen, then will be clear
Magnetron sputtering method of the isosceles triangle copper foil in above-described embodiment 1 of wash clean, under the protection of argon gas, using copper oxide as target
Material deposits the CuO film of one layer of 10nm thickness in isosceles triangle copper foil surface.With the surface deposited oxide Copper thin film etc.
Isosceles triangle copper foil in lumbar triangle shape copper foil alternative embodiment 1, other steps are same as Example 1, since copper oxide is thin
Film can increase the absorption of light, therefore the thermionic current generated is 0.83nA.
Claims (7)
1. a kind of method that light generates thermionic current, it is characterised in that: pass through magnetron sputtering deposition upper one on a glass substrate
Layer doped zinc oxide aluminium film, and a piece of triangle copper foil is vertically found in film surface, make the angle at any one angle of triangle copper foil
Point is contacted with film surface, is then used the top of the horn of he-ne laser irradiation triangle copper foil and film surface contact angle, that is, be can produce
Thermionic current.
2. the method that light according to claim 1 generates thermionic current, it is characterised in that: the triangle copper foil with it is thin
The angle of film surface contact angle is 10 °~40 °.
3. the method that light according to claim 2 generates thermionic current, it is characterised in that: in the triangle copper foil
The angle of maximum angular is no more than 90 °.
4. the method that light according to claim 1 generates thermionic current, it is characterised in that: the thickness of the triangle copper foil
Degree is 6~12 μm.
5. the method that light according to claim 1 generates thermionic current, it is characterised in that: the doped zinc oxide aluminium film
With a thickness of 80~200nm.
6. the method that light described in any one generates thermionic current according to claim 1~5, it is characterised in that: described
Triangle copper foil surface is deposited with one layer of CuO film.
7. the method that light according to claim 6 generates thermionic current, it is characterised in that: the triangle copper foil table
Face deposition CuO film with a thickness of 5~20nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710221511.XA CN107134505B (en) | 2017-04-06 | 2017-04-06 | A kind of method that light generates thermionic current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710221511.XA CN107134505B (en) | 2017-04-06 | 2017-04-06 | A kind of method that light generates thermionic current |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107134505A CN107134505A (en) | 2017-09-05 |
| CN107134505B true CN107134505B (en) | 2018-12-07 |
Family
ID=59716548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710221511.XA Expired - Fee Related CN107134505B (en) | 2017-04-06 | 2017-04-06 | A kind of method that light generates thermionic current |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107134505B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820348A (en) * | 2012-08-28 | 2012-12-12 | 夏洋 | AZO-black silicon hetero-junction solar battery and preparation method thereof |
| CN105206693A (en) * | 2014-06-19 | 2015-12-30 | 中国科学院大连化学物理研究所 | Flexible thin-film solar cell structure and preparation method |
-
2017
- 2017-04-06 CN CN201710221511.XA patent/CN107134505B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820348A (en) * | 2012-08-28 | 2012-12-12 | 夏洋 | AZO-black silicon hetero-junction solar battery and preparation method thereof |
| CN105206693A (en) * | 2014-06-19 | 2015-12-30 | 中国科学院大连化学物理研究所 | Flexible thin-film solar cell structure and preparation method |
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| Publication number | Publication date |
|---|---|
| CN107134505A (en) | 2017-09-05 |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181207 Termination date: 20210406 |
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| CF01 | Termination of patent right due to non-payment of annual fee |