CN107134448A - Improve the integrability method of visible light communication LED/light source modulation bandwidth - Google Patents
Improve the integrability method of visible light communication LED/light source modulation bandwidth Download PDFInfo
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- CN107134448A CN107134448A CN201710252392.4A CN201710252392A CN107134448A CN 107134448 A CN107134448 A CN 107134448A CN 201710252392 A CN201710252392 A CN 201710252392A CN 107134448 A CN107134448 A CN 107134448A
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- visible light
- modulation bandwidth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract
A kind of integrability method for improving visible light communication LED/light source modulation bandwidth, comprises the following steps：Step 1：Intermediate fabrication metal thin film resistor on an insulating substrate；Step 2：Make the bottom electrode plate of a capacity plate antenna respectively in the both sides of metal thin film resistor；Step 3：In one layer of insulating medium layer of disposed thereon of metal thin film resistor, bottom electrode plate and dielectric substrate, the middle dielectric layer of capacity plate antenna is used as；Step 4：Middle both sides on insulating medium layer make the positive electrode and negative electrode needed for LED is sealed, and the positive electrode and negative electrode are not connected with；Step 5：The electric pole plate of capacity plate antenna is made on the outside insulating medium layer of positive electrode and negative electrode, two electric pole plates are connected with positive electrode with negative electrode respectively, constitute equalizing circuit in parallel；Step 6：LED chip is sealed on the positive electrode and negative electrode prepared using soldered ball, the making of integrated device is completed.
Description
Technical field
The invention belongs to technical field of visible light communication, and in particular to one kind improves visible light communication LED/light source modulation band
Wide integrability method.
Background technology
Visible light communication technology refers to the light by the use of visible light wave range as the carrier of information, the transmission without wire message way
Medium, directly transmits the communication mode of optical signal in atmosphere.Visible light communication has transmission rate height, electromagnetic-radiation-free, energy
The distinguishing features such as consumption is low, abundant, the confidentiality height of frequency spectrum, it has also become the focus of short distance free-space communication.
Visible light communication light source is as one of communication system key, and it is to turn the electric signal for carrying customizing messages that it, which is acted on,
It is melted into the optical signal of electromagnetic-radiation-free pollution.Visible light communication LED/light source of the present invention, which is used, is based on GaN or GaAs materials
LED chip, its Electro-optical Modulation principle is based on the radiation recombination effect in MQW, i.e., when additional periodic modulation on LED
During signal, being injected into the carrier concentration of MQW will change, and the carrier quantity of radiation recombination changes therewith,
The cyclically-varying with the carrier number change of radiation recombination of the visual intensity of outgoing, the final tune realized to emergent light
System.
Commercial LED is influenceed by device RC times itself and carrier lifetime, and available modulation is no more than 40MHZ.
The raising modulation bandwidth method reported is that preemphasis circuit is added between signal source and LED.The implementation process of this method is
Signal of communication is first passed through high pass mode filter, the relatively low signal of frequency is decayed, after amplifier amplifies, then passed through
Bias-T is added in constant drive current and is transferred to LED/light source, is ultimately converted to optical signal.The preemphasis circuit is by making
The module of pcb board level is realized.Due to including passive filter module, amplifier module, Bias-T from preemphasis circuit to LED
Module, multiple module-cascades cause design difficulty to significantly improve.Meanwhile, module number more multiple ic structure is more complicated, right
The number of plies of PCB and the requirement of area are also higher, and thus preparing cost will also significantly improve.Therefore, with multiple module levels
Preemphasis circuit design difficulty with the characteristics of connection is big, and circuit structure is complicated and prepares cost height.
Visible light communication LED/light source is influenceed by self capacity characteristic, and its impedance is simultaneously non-constant, but with transmission signal
Frequency rise and gradually reduce., can be with the positive and negative electrode design at LED chip two ends equalizing circuit in parallel based on the feature
Improve LED available modulation.The equalizing circuit in parallel is made up of electric capacity with resistance.The effect of electric capacity is to stop direct current signal
Pass through, it is to avoid parallel circuit produces DC losses；Resistance is connected with electric capacity, and the impedance value of its resistance and LED chip is approached, effect
It is to weaken the low frequency part in input signal, and the HFS of input signal will all be transferred to LED, so as to reach balanced effect
Really, modulation bandwidth is improved.Because equalizing circuit in parallel is simple in construction, the number of processes needed for implementation process is few, also compatible
Si base integrated techniques, itself and LED chip are carried out integrated design difficulty and preparation cost is greatly reduced.
The content of the invention
It is an object of the invention to provide a kind of integrability method for improving visible light communication LED/light source modulation bandwidth,
This method technique makes simple；Compatible ripe Si base integrated techniques, and shadow will not be brought to original LED luminescent properties
Ring；Equalizing circuit in parallel with LED chip it is integrated after, device area is close with not integrated LED component；It can significantly improve visible
The available modulation of optic communication LED/light source.
The present invention provides a kind of integrability method for improving visible light communication LED/light source modulation bandwidth, including following step
Suddenly：
Step 1：Intermediate fabrication metal thin film resistor on an insulating substrate；
Step 2：Make the bottom electrode plate of a capacity plate antenna respectively in the both sides of metal thin film resistor；
Step 3：In one layer of insulating medium layer of disposed thereon of metal thin film resistor, bottom electrode plate and dielectric substrate, make
For the middle dielectric layer of capacity plate antenna；
Step 4：Middle both sides on insulating medium layer make the positive electrode and negative electrode needed for LED is sealed, the positive electricity
Pole and negative electrode are not connected with；
Step 5：Made on the outside insulating medium layer of positive electrode and negative electrode on the electric pole plate of capacity plate antenna, two
Battery lead plate is connected with positive electrode with negative electrode respectively, constitutes equalizing circuit in parallel；
Step 6：LED chip is sealed on the positive electrode and negative electrode prepared using soldered ball, integrated device is completed
Make.
The beneficial effects of the invention are as follows this method technique makes simple；Compatible ripe Si base integrated techniques, and will not
Influence is brought on original LED luminescent properties；Equalizing circuit in parallel with LED chip it is integrated after, device area is with not integrated LED
Device is close；The available modulation of visible light communication LED/light source can be significantly improved.
Brief description of the drawings
To make the object, technical solutions and advantages of the present invention become apparent from understanding, below in conjunction with specific embodiment, and reference
Accompanying drawing is described in further details to the present invention.Here illustrated as the presently preferred embodiments with inverted structure LED chip, its
In：
Fig. 1 is the Making programme figure of the present invention；
Fig. 2 is the structural representation of the present invention.
Embodiment
Refer to shown in Fig. 1-Fig. 2, the present invention provide it is a kind of improve visible light communication LED/light source modulation bandwidth can be integrated
Change method, comprises the following steps：
Step 1：Intermediate fabrication metal thin film resistor 9 in dielectric substrate 1, the material of the dielectric substrate 1 is blue precious
Stone, silicon, carborundum, ceramics or surface have the substrate of insulating barrier, and typical resistivity is more than 300 Ω cm, and thickness is more than 50um；
The material of the metal thin film resistor 9 be nickel, chromium, copper, gold, aluminium, platinum, tungsten, tin or silver, or more metal combination；In addition, golden
The resistance for belonging to film resistor 9 is obtained by changing the thickness, width and length of metallic film 9, and resistance specific size is with LED core
The impedance magnitude of piece 6 is related, and such as plan design obtains the resistance of LED chip 6 under 300MHz modulation bandwidth, preferable 300MHz
The anti-resistance being worth as metal thin film resistor 9.
Step 2：Make the bottom electrode plate 2 of a capacity plate antenna respectively in the both sides of metal thin film resistor 9；Two bottom electrodes
Plate 2, is connected with the two ends of metal thin film resistor 9 respectively, the RC circuits for constituting series connection；Bottom electrode plate 2 and metal thin film resistor 9
Metal material used can be identical or differ.
Step 3：In one layer of insulating medium layer of disposed thereon of metal thin film resistor 9, bottom electrode plate 2 and dielectric substrate 1
8, as the middle dielectric layer of capacity plate antenna, the material of the insulating medium layer 8 is HfO2、Al2O3、SiO2、TiO2Or ZrO2, or
The stacked combination of above material.
Step 4：Middle both sides on insulating medium layer 8 make the positive electrode 7 and negative electrode 4 needed for LED is sealed, and this is just
Electrode 7 and negative electrode 4 are not connected with；
Step 5：The electric pole plate 3 of capacity plate antenna is made on the outside insulating medium layer 8 of positive electrode 7 and negative electrode 4.Two
Individual electric pole plate 3 is connected with positive electrode 7 with negative electrode 4 respectively, with bottom electrode plate 2, metal thin film resistor 9 and insulating medium layer 8
Equalizing circuit in parallel is constituted together；Positive electrode 7, negative electrode 4 and metal used in electric pole plate 3 be nickel, chromium, copper, gold, aluminium, platinum,
Tungsten, tin or silver, or more metal combination.
The effect of metal thin film resistor 9 is to weaken the low frequency part in input signal in the equalizing circuit in parallel, and defeated
LED chip 6 will be all transferred to by entering the HFS of signal, so as to reach portfolio effect, improve modulation bandwidth.
Electric pole plate 3, bottom electrode plate 2 and insulating medium layer 8 constitute electric capacity in the equalizing circuit in parallel, and it is resistance that it, which is acted on,
Gear direct current signal passes through, it is to avoid parallel circuit produces DC losses；The capacitance of the electric capacity be by change upper and lower battery lead plate 3,
2 effective area, and the thickness of the insulating medium layer 8 are obtained.
Step 6：LED chip 6 is sealed on the positive electrode 7 and negative electrode 4 prepared using soldered ball 5, integrator is completed
The making of part, the encapsulating structure of the LED chip 6 is inverted structure, positive assembling structure or vertical stratification.
What deserves to be explained is, the specific embodiment of the present invention is the foregoing is only, is not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (8)
1. a kind of integrability method for improving visible light communication LED/light source modulation bandwidth, comprises the following steps：
Step 1：Intermediate fabrication metal thin film resistor on an insulating substrate；
Step 2：Make the bottom electrode plate of a capacity plate antenna respectively in the both sides of metal thin film resistor；
Step 3：In one layer of insulating medium layer of disposed thereon of metal thin film resistor, bottom electrode plate and dielectric substrate, as flat
The middle dielectric layer of plate electric capacity；
Step 4：Middle both sides on insulating medium layer make the positive electrode and negative electrode needed for LED is sealed, the positive electrode and
Negative electrode is not connected with；
Step 5：The electric pole plate of capacity plate antenna, two Top electrodes are made on the outside insulating medium layer of positive electrode and negative electrode
Plate is connected with positive electrode with negative electrode respectively, constitutes equalizing circuit in parallel；
Step 6：LED chip is sealed on the positive electrode and negative electrode prepared using soldered ball, the making of integrated device is completed.
2. the integrability method according to claim 1 for improving visible light communication LED/light source modulation bandwidth, wherein step
The material of dielectric substrate described in 1 is the substrate that sapphire, silicon, carborundum, ceramics or surface have insulating barrier.
3. the integrability method according to claim 1 for improving visible light communication LED/light source modulation bandwidth, wherein step
The material of metal thin film resistor described in 1 be nickel, chromium, copper, gold, aluminium, platinum, tungsten, tin or silver, or more metal combination；In addition, golden
The resistance for belonging to film resistor is obtained by changing the thickness, width and length of metallic film, and resistance specific size is with LED chip
Impedance magnitude it is related.
4. the integrability method according to claim 1 for improving visible light communication LED/light source modulation bandwidth, wherein step
The material of insulating medium layer described in 2 is HfO2、Al2O3、SiO2、TiO2Or ZrO2, or more material stacked combination.
5. the integrability method according to claim 1 for improving visible light communication LED/light source modulation bandwidth, wherein described
The capacitance of capacity plate antenna is the effective area by changing upper and lower battery lead plate, and the thickness of the insulating medium layer is obtained.
6. the integrability method according to claim 1 for improving visible light communication LED/light source modulation bandwidth, wherein step
Electric pole plate, bottom electrode plate and insulating medium layer constitute electric capacity in equalizing circuit in parallel described in 5, and it is to stop direct current signal that it, which is acted on,
Pass through, it is to avoid parallel circuit produces DC losses.
7. the integrability method according to claim 1 for improving visible light communication LED/light source modulation bandwidth, wherein metal
Film resistor is connected with bottom electrode plate, and the impedance value of its impedance value and LED chip is approached, and effect is to weaken low in input signal
Frequency part, and the HFS of input signal will all be transferred to LED chip, so as to reach portfolio effect, improve modulation bandwidth.
8. the integrability method according to claim 1 for improving visible light communication LED/light source modulation bandwidth, wherein described
The encapsulating structure of LED chip is inverted structure, positive assembling structure or vertical stratification.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710252392.4A CN107134448B (en) | 2017-04-18 | 2017-04-18 | Improve the integrability method of visible light communication LED light source modulation bandwidth |
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| CN201710252392.4A CN107134448B (en) | 2017-04-18 | 2017-04-18 | Improve the integrability method of visible light communication LED light source modulation bandwidth |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100200941A1 (en) * | 2006-12-20 | 2010-08-12 | Junichi Fujikata | Photodiode, optical communication device, and optical interconnection module |
| US20110175138A1 (en) * | 2006-04-21 | 2011-07-21 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with integrated electronic components |
| EP2437581A1 (en) * | 2010-09-30 | 2012-04-04 | Odelo GmbH | Light diode on a ceramic substrate basis |
| CN105895653A (en) * | 2016-05-16 | 2016-08-24 | 华南师范大学 | High-voltage visible light communication LED device and manufacturing method thereof |
| CN106549031A (en) * | 2016-11-25 | 2017-03-29 | 复旦大学 | A kind of monolithic integrated device based on body GaN material and preparation method thereof |
-
2017
- 2017-04-18 CN CN201710252392.4A patent/CN107134448B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110175138A1 (en) * | 2006-04-21 | 2011-07-21 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with integrated electronic components |
| US20100200941A1 (en) * | 2006-12-20 | 2010-08-12 | Junichi Fujikata | Photodiode, optical communication device, and optical interconnection module |
| EP2437581A1 (en) * | 2010-09-30 | 2012-04-04 | Odelo GmbH | Light diode on a ceramic substrate basis |
| CN105895653A (en) * | 2016-05-16 | 2016-08-24 | 华南师范大学 | High-voltage visible light communication LED device and manufacturing method thereof |
| CN106549031A (en) * | 2016-11-25 | 2017-03-29 | 复旦大学 | A kind of monolithic integrated device based on body GaN material and preparation method thereof |
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| CN107134448B (en) | 2019-04-02 |
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Effective date of registration: 20181205 Address after: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Applicant after: Semiconductor Inst., Chinese Academy of Sciences Applicant after: University of Chinese Academy of Sciences Address before: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Applicant before: Semiconductor Inst., Chinese Academy of Sciences |
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