CN107134406A - A kind of method for preparing nitride self-supported substrate - Google Patents
A kind of method for preparing nitride self-supported substrate Download PDFInfo
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- CN107134406A CN107134406A CN201710316317.XA CN201710316317A CN107134406A CN 107134406 A CN107134406 A CN 107134406A CN 201710316317 A CN201710316317 A CN 201710316317A CN 107134406 A CN107134406 A CN 107134406A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
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- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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Abstract
A kind of method for preparing nitride self-supported substrate, comprises the following steps：Sapphire substrates to be processed are chosen, the sapphire substrates are spliced to form by the sub- sapphire substrates after at least two processed shapings；The cvd nitride thing formation nitride layer in sapphire substrates；Laser lift-off is carried out, makes laser incident from side where sapphire substrates, sapphire substrates is scanned comprehensively, according to the sequencing of laser scanning, each sub- sapphire substrates are separated with nitride layer successively, so as to prepare nitride self-supported substrate.The present invention is conducive to stress release, largely reduces the difficulty of laser lift-off technique, the problem of solving mono-crystalline nitride layer fragmentation in laser lift-off, so as to obtain complete large scale nitride self-supported substrate.
Description
Technical field
Large scale nitride is prepared the present invention relates to semiconductor substrate materials preparation field, more particularly to a kind of laser lift-off
The method of self-supported substrate.
Background technology
Twentieth century end, in order to realize high frequency, wide bandwidth, high efficiency and the preparation of the excellent properties device such as high-power, with
Gallium nitride accelerates development process for the third generation semiconductor material with wide forbidden band of representative.At present, large scale gallium nitride self-supporting is served as a contrast
The preparation at bottom is one of obstacle maximum in forward march.Its preparation technology, generally hetero-epitaxy is nitrogenized on a sapphire substrate
Gallium film, then using laser lift-off technique（Laser Lift-off Technique）So that gallium nitride film is separated with sapphire,
So as to obtain self-support gallium nitride substrate.During gallium nitride on sapphire hetero-epitaxy, there is larger lattice and lose
With with heat expansion mismatch, thereby result in during laser lift-off, gallium nitride film be easier to produce fragmentation.
Chinese patent CN1779900A sticks to epitaxial layer of gallium nitride on supporting liner bottom, is prevented by an external substrate
The generation of gallium nitride fragmentation during laser lift-off, so as to obtain Nitridation of Large gallium self-supported substrate；Chinese patent
CN103839777A passes through LASER Light Source using the strip laser facula scanning irradiation Sapphire Substrate of step-scan mode
Regulation, realizes the stripping of Nitridation of Large gallium film；Chinese patent CN105720141A is between gallium nitride film and sapphire substrates
Laser barrier layer is grown, is that laser lift-off prepares large scale nitridation by growing favourable film layer in advance in crystal growing process
Gallium self-supported substrate has established foundation stone.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of method for preparing nitride self-supported substrate, be conducive to stress
Release, largely reduces the difficulty of laser lift-off technique, the problem of solving mono-crystalline nitride layer fragmentation in laser lift-off.
In order to solve the above-mentioned technical problem, the present invention takes following technical scheme：
A kind of method for preparing nitride self-supported substrate, comprises the following steps：
Sapphire substrates to be processed are chosen, the sapphire substrates are spelled by the sub- sapphire substrates after at least two processed shapings
Connect to be formed；
The cvd nitride thing formation nitride layer in sapphire substrates；
Laser lift-off is carried out, makes laser incident from side where sapphire substrates, sapphire substrates is scanned comprehensively, according to sharp
The sequencing of optical scanning, each sub- sapphire substrates are separated with nitride layer successively, so as to prepare nitride self-supported lining
Bottom.
After the laser is incident from side where sapphire substrates, laser bar shaped is scanned successively from left to right.
After the laser is incident from side where sapphire substrates, from outer ring to inner ring successively laser circular scanning.
Triangle, quadrangle, polygon or irregular figure are shaped as after the processed shaping of sub- sapphire substrates.
The area equation or unequal of each sub- sapphire substrates.
Between each sub- sapphire substrates for constituting sapphire substrates, spliced using the free style without external force constraint,
Either spelled between adjacent sub- sapphire substrates using between glue bonding or adjacent sub- sapphire substrates using buckle structure
Connect.
The depositional mode used in sapphire substrates during cvd nitride thing for liquid phase epitaxy and/or vapour phase epitaxy,
Wherein vapour phase epitaxy is gas phase epitaxy of metal organic compound, hydride gas-phase epitaxy or molecular beam epitaxy, individually using vapour phase epitaxy
When for one or any two kinds or three in gas phase epitaxy of metal organic compound, hydride gas-phase epitaxy and molecular beam epitaxy
Kind.
The present invention constitutes a large-sized sapphire substrates by using many sub- sapphire substrates, large-sized at this
Cvd nitride thing in sapphire substrates, using laser light incident sapphire substrates so that each sub- sapphire substrates successively with
Nitride separation, nitride has obtained effective stress release during separation, all the time not chipping or crackle, so that
Prepare nitride self-supported substrate.
Brief description of the drawings
Accompanying drawing 1 is the schematic diagram of embodiment one of sapphire substrates in the present invention；
Accompanying drawing 2 is the schematic diagram of embodiment two of sapphire substrates in the present invention；
Accompanying drawing 3 is of the invention in deposition temperature range, the diagrammatic cross-section of cvd nitride thing in sapphire substrates；
The diagrammatic cross-section that accompanying drawing 4 is cooled to after room temperature for the present invention；
Accompanying drawing 5 is the schematic diagram of embodiment one of laser scanning of the present invention；
Accompanying drawing 6 is the schematic diagram of embodiment two of laser scanning of the present invention.
Embodiment
For the feature, technological means and the specific purposes reached, function of the present invention can be further appreciated that, with reference to
Accompanying drawing is described in further detail with embodiment to the present invention.
As shown in accompanying drawing 1,3 and 4, present invention is disclosed a kind of method for preparing nitride self-supported substrate,
S1, chooses sapphire substrates 3 to be processed, the sapphire substrates 3 are by the sub- sapphire after at least two processed shapings
Substrate 11 is spliced to form, so as to constitute a large-size sapphire substrate by the sub- sapphire substrates of at least two reduced sizes.
S2, the cvd nitride thing formation nitride layer 2 in sapphire substrates 3.The nitride includes various nitrogenous chemical combination
Thing, such as gallium nitride, aluminium nitride.Depositional mode can use gas phase epitaxy of metal organic compound, hydride gas-phase epitaxy and molecular beam
One or two kinds of in the vapour phase epitaxies such as extension either three kinds or uses liquid phase epitaxy, or liquid phase epitaxy with it is above-mentioned
Any one in vapour phase epitaxy or two kinds or three kinds of compound uses.
S3, carries out laser lift-off, makes laser incident from side where sapphire substrates, sapphire substrates are swept comprehensively
Retouch, according to the sequencing of laser scanning, each sub- sapphire substrates are separated with nitride layer successively, so as to prepare nitride
Self-supported substrate.
In addition, being shaped as triangle, quadrangle, polygon or irregular after the processed shaping of sub- sapphire substrates
Figure.The area equation or unequal of each sub- sapphire substrates.
Between each sub- sapphire substrates for constituting sapphire substrates, spliced using the free style without external force constraint,
Either spelled between adjacent sub- sapphire substrates using between glue bonding or adjacent sub- sapphire substrates using buckle structure
Connect.
Embodiment one, as shown in Figure 1, sub- sapphire substrates 11 are square, and each sub- sapphire substrates 11 are without any
In the state of external force constraint（Adhesives is not present in the splicing of sapphire substrates 3 interface）, mutually closely it is placed on vapour phase epitaxy use
Graphite plate on, be spliced into 6 inches of sapphire substrates 3.Hydrogenated thing vapor phase epitaxy technique（HVPE）Grow 500 microns thick
Gallium nitride 2, as shown in figure 3, wherein the profile is obtained according to the progress section of hatching 51 in accompanying drawing 1.Then it is down to room temperature
Piece is taken, due to coefficient of thermal expansion and the mismatch of lattice constant, gallium nitride/sapphire compound substrate has bending, as shown in Figure 4.
As shown in figure 5, laser 4 is incident from side where sapphire, laser bar shaped is scanned successively from left to right, square sub- sapphire substrates
11 separate with gallium nitride successively, and gallium nitride 2 has obtained effective stress release during separation, not chipping all the time
Or crackle, so as to prepare 6 inches of gallium nitride self-supported substrates.
Embodiment two, as shown in Figure 2, first through gas phase epitaxy of metal organic compound technology in sub- sapphire substrates
（MOCVD）3 microns of thick nitride buffer layers are grown, post-processing is shaped to the sub- sapphire substrates 12 of regular hexagon, by multi-disc just
Square sub- sapphire substrates 12 mutually use adhesives, are placed on the graphite plate of vapour phase epitaxy, are spliced into 4 inches of indigo plant
Jewel substrate 3.Through molecular beam epitaxy（MBE）Growth gallium nitride 2 300 microns thick.Through the section of hatching 52 in accompanying drawing 2, obtain
To cross-sectional view as shown in Figure 6, laser 4 is from side incidence where sapphire, the annular from outer ring to inner ring successively laser
Scanning, the sub- sapphire substrates 12 of regular hexagon are separated with gallium nitride 2 successively, and gallium nitride 2 is had during separation
The stress release of effect, not chipping or crackle all the time, so as to prepare 6 inches of gallium nitride self-supported substrates.
It should be noted that these are only the preferred embodiments of the present invention, it is not intended to limit the invention, although ginseng
The present invention is described in detail according to embodiment, for those skilled in the art, it still can be to foregoing reality
Apply the technical scheme described in example to modify, or equivalent substitution is carried out to which part technical characteristic, but it is all in this hair
Within bright spirit and principle, any modification, equivalent substitution and improvements made etc. should be included in protection scope of the present invention
Within.
Claims (7)
1. a kind of method for preparing nitride self-supported substrate, comprises the following steps：
Sapphire substrates to be processed are chosen, the sapphire substrates are spelled by the sub- sapphire substrates after at least two processed shapings
Connect to be formed；
The cvd nitride thing formation nitride layer in sapphire substrates；
Laser lift-off is carried out, makes laser incident from side where sapphire substrates, sapphire substrates is scanned comprehensively, according to sharp
The sequencing of optical scanning, each sub- sapphire substrates are separated with nitride layer successively, so as to prepare nitride self-supported lining
Bottom.
2. the method according to claim 1 for preparing nitride self-supported substrate, it is characterised in that the laser is precious from indigo plant
After side is incident where ground mass bottom, laser bar shaped is scanned successively from left to right.
3. the method according to claim 1 for preparing nitride self-supported substrate, it is characterised in that the laser is precious from indigo plant
After side is incident where ground mass bottom, from outer ring to inner ring successively laser circular scanning.
4. the method for preparing nitride self-supported substrate according to claim 1 or 2 or 3, it is characterised in that the son is blue
Triangle, quadrangle, polygon or irregular figure are shaped as after the processed shaping of jewel substrate.
5. the method according to claim 4 for preparing nitride self-supported substrate, it is characterised in that each height is blue precious
The area equation at ground mass bottom is unequal.
6. the method according to claim 5 for preparing nitride self-supported substrate, it is characterised in that the composition sapphire
Between each sub- sapphire substrates of substrate, using without external force constraint free style splice, or adjacent sub- sapphire substrates it
Between using glue bonding, or between adjacent sub- sapphire substrates using buckle structure splice.
7. the method according to claim 6 for preparing nitride self-supported substrate, it is characterised in that described in process for sapphire-based
The depositional mode used on bottom during cvd nitride thing is liquid phase epitaxy and/or vapour phase epitaxy, and wherein vapour phase epitaxy is that metal is organic
Thing vapour phase epitaxy, hydride gas-phase epitaxy or molecular beam epitaxy, when individually using vapour phase epitaxy for gas phase epitaxy of metal organic compound,
One or any two kinds or three kinds in hydride gas-phase epitaxy and molecular beam epitaxy.
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| CN201710316317.XA CN107134406B (en) | 2017-05-08 | 2017-05-08 | Method for preparing nitride self-supporting substrate |
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| CN107134406B CN107134406B (en) | 2020-06-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585269A (en) * | 2018-11-09 | 2019-04-05 | 北京大学 | A method of semiconductor monocrystal substrate is prepared using two dimensional crystal transition zone |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1381870A (en) * | 2002-05-31 | 2002-11-27 | 南京大学 | Technology for obtaining large-area high-quality GaN self-supporting substrate |
| CN102005370A (en) * | 2010-10-12 | 2011-04-06 | 北京大学 | Method for preparing homoepitaxy substrate |
| CN102828239A (en) * | 2012-08-24 | 2012-12-19 | 东莞市中镓半导体科技有限公司 | Method for preparing self-supporting substrate from gallium nitride single-crystal materials by self-separating by aid of defect and stress removal technology |
| CN103618034A (en) * | 2013-11-29 | 2014-03-05 | 厦门大学 | Self-supporting vertical structural GaN-based LED chip and preparation method thereof |
| CN105590841A (en) * | 2014-11-14 | 2016-05-18 | 东莞市中镓半导体科技有限公司 | Crack-free laser lift-off method for preparing GaN self-supporting substrate |
-
2017
- 2017-05-08 CN CN201710316317.XA patent/CN107134406B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1381870A (en) * | 2002-05-31 | 2002-11-27 | 南京大学 | Technology for obtaining large-area high-quality GaN self-supporting substrate |
| CN102005370A (en) * | 2010-10-12 | 2011-04-06 | 北京大学 | Method for preparing homoepitaxy substrate |
| CN102828239A (en) * | 2012-08-24 | 2012-12-19 | 东莞市中镓半导体科技有限公司 | Method for preparing self-supporting substrate from gallium nitride single-crystal materials by self-separating by aid of defect and stress removal technology |
| CN103618034A (en) * | 2013-11-29 | 2014-03-05 | 厦门大学 | Self-supporting vertical structural GaN-based LED chip and preparation method thereof |
| CN105590841A (en) * | 2014-11-14 | 2016-05-18 | 东莞市中镓半导体科技有限公司 | Crack-free laser lift-off method for preparing GaN self-supporting substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585269A (en) * | 2018-11-09 | 2019-04-05 | 北京大学 | A method of semiconductor monocrystal substrate is prepared using two dimensional crystal transition zone |
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