CN107123671B - Grade doping IGZO thin film transistor (TFT) based on organic insulator and preparation method thereof - Google Patents
Grade doping IGZO thin film transistor (TFT) based on organic insulator and preparation method thereof Download PDFInfo
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- CN107123671B CN107123671B CN201710355891.6A CN201710355891A CN107123671B CN 107123671 B CN107123671 B CN 107123671B CN 201710355891 A CN201710355891 A CN 201710355891A CN 107123671 B CN107123671 B CN 107123671B
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- 239000012212 insulator Substances 0.000 title claims abstract description 56
- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims description 27
- 239000010408 film Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 25
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- 238000000137 annealing Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical class COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims description 18
- 238000004528 spin coating Methods 0.000 claims description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 12
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 11
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 9
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 150000004702 methyl esters Chemical class 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 235000019441 ethanol Nutrition 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims 1
- 229920002223 polystyrene Polymers 0.000 claims 1
- 230000006378 damage Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003760 magnetic stirring Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000002061 vacuum sublimation Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- Thin Film Transistor (AREA)
Abstract
The present invention provides a kind of grade doping IGZO thin film transistor (TFT) based on organic insulator, it is related to electronic technology field, including substrate, gate electrode, organic insulator, the grade doping IGZO semiconductor layer being arranged successively from bottom to up, source electrode and drain electrode is equipped on grade doping IGZO semiconductor layer side by side, wherein, grade doping IGZO semiconductor layer includes lowest level IGZO film, top layer's IGZO film, the middle layer IGZO film that concentration is sequentially increased.The present invention solves IGZO semiconductor and the lattice of organic insulator mismatches, the destruction so as to cause subsequent magnetically controlled DC sputtering IGZO film to organic insulator, the bigger problem of leakage current.
Description
Technical field
The present invention relates to electronic technology fields, and in particular to a kind of grade doping IGZO film based on organic insulator is brilliant
Body pipe and preparation method thereof.
Background technique
Flat-panel monitor (FPD) gradually substitutes cathode-ray tube (CRT), and in display industry predominantly
Position.And switch original part of the thin film transistor (TFT) as the driving circuit of flat-panel monitor, its performance directly decide display matter
The superiority and inferiority of amount.In common active driven liquid crystal display, hydrogenation non crystal silicon film transistor is generally used, but due to it
Have the shortcomings that it is opaque, be affected by visible light and carrier mobility is low etc., limit its and further develop.Recent years
Due to Organic Light Emitting Diode (AMOLED) display technology demand for development, traditional amorphous silicon hydride has much been not achieved active
The requirement of driving.
The appearance of new material IGZO is so fine that solve the disadvantage that traditional hydrogenation amorphous silicon.But since IGZO belongs to inorganic half
Conductor material, practice have shown that, this IGZO semiconductor deposition is in inorganic insulation layer (such as SiO2, Si3N4Deng) can obtain it is very good
Device performance.Since this kind of inorganic insulation layer is opaque, deposition cost is relatively high, flexibility is poor feature, they
The development in Flexible Displays and transparent wearable device field is not good enough.And it then can solve this using transparent organic insulator
Problem, not only available flexible and transparent device, but also cost of manufacture is greatly reduced by the method for spin coating organic insulator.
But since the lattice of IGZO semiconductor and organic insulator mismatches, there are many defects in insulating layer and semiconductor layer surface,
Destruction of the subsequent magnetically controlled DC sputtering IGZO film to organic insulator, it is bigger so as to cause leakage current.
Summary of the invention
It is an object of the invention to: it is mismatched to solve the lattice of IGZO semiconductor and organic insulator, so as to cause rear
Continuous destruction of the magnetically controlled DC sputtering IGZO film to organic insulator, the bigger problem of leakage current, the present invention provides one kind
The preparation method of the thin film transistor (TFT) of grade doping active layer IGZO based on organic insulator.
Technical scheme is as follows:
A kind of grade doping IGZO thin film transistor (TFT) based on organic insulator, including the lining being arranged successively from bottom to up
Bottom, gate electrode, organic insulator, grade doping IGZO semiconductor layer are equipped with source electricity on grade doping IGZO semiconductor layer side by side
Pole and drain electrode, wherein grade doping IGZO semiconductor layer includes lowest level IGZO film, the top layer that concentration is sequentially increased
IGZO film, middle layer IGZO film.
Further, the partial pressure of oxygen (O of the lowest level IGZO film of the grade doping IGZO semiconductor layer2Flow/Ar stream
Amount) it is 5%-8%, with a thickness of 1~3nm；The partial pressure of oxygen of middle layer IGZO film is 0%-2%, and thickness is in 2~4nm；Top layer
The partial pressure of oxygen of IGZO film is 2%-3%, with a thickness of 30~60nm.
Preferably, the material of the substrate is one in polyimides, polyethylene terephthalate or glass substrate
Kind.
Preferably, the gate electrode be tin indium oxide, gate electrode with a thickness of 150~250nm.
Preferably, the material of the organic insulator is polymethyl methacrylate, polyvinyl alcohol, polycarbonate, polyphenyl
One of ethylene, with a thickness of 100~360nm.
Preferably, the material of the source electrode and the drain electrode be tin indium oxide, zinc oxide, indium gallium zinc oxide,
One of graphene, metal simple-substance silver, aluminium, gold, the thickness of source electrode and the drain electrode is 100~200nm.
On the other hand, the present invention provides a kind of preparation side of grade doping IGZO thin film transistor (TFT) based on organic insulator
Method includes the following steps:
S1: preparation cleaning substrate；Particle first big with acetone wiping substrate surface, then uses week-base water, acetone, deionization
Water, ethyl alcohol or isopropanol are respectively cleaned by ultrasonic glass substrate, are finally dried up substrate with nitrogen (purity > 99.99%)；
S2: gate electrode is prepared；Tin indium oxide gate electrode is prepared on the surface of the S1 substrate prepared by magnetron sputtering method；
S3: organic insulator is prepared；The tin indium oxide gate electrode prepared by the method for spin coating in S2 is prepared above to be had
Then machine insulating layer carries out thermal annealing；
S4: IGZO layers of grade doping (4) are prepared；It is prepared using the IGZO target of magnetically controlled DC sputtering；Prepare lowest level
Sputtering power when IGZO film (41) is 80~100W, partial pressure of oxygen 5%-8%；It is splashed when preparing middle layer IGZO film (42)
Penetrating power is 80~100W, partial pressure of oxygen 0%-2%；Prepare top layer IGZO film (43) when sputtering power be 150~
250W, partial pressure of oxygen 2%-3%；When preparing everywhere, Ar flow is maintained at 100sccm, and chamber pressure is maintained at 3mTorr.
S5: preparation source electrode and drain electrode: by S4, treated that transistor is put into metal vacuum cavity, anneals to it
Processing, 150 DEG C of annealing temperature, annealing time 30 minutes, then pass through vacuum thermal evaporation, magnetron sputtering, electron beam evaporation, screen printing
Any one method in brush, spraying prepares source electrode and drain electrode.
Further, in S3, the material of organic insulator is polymethyl methacrylate, when preparation, first by poly- methyl-prop
E pioic acid methyl ester is dissolved in methyl phenyl ethers anisole, and the mass ratio of polymethyl methacrylate and methyl phenyl ethers anisole is 10%:90%, spin coating when spin coating
Parameter are as follows: 1800rpm, 280nm；Parameter when annealing are as follows: 80 DEG C of annealing temperature, annealing time 30 minutes.
Further, in S3, the material of organic insulator is polyvinyl alcohol, when preparation, first by polyvinyl alcohol be dissolved in from
In sub- water, the mass ratio 10%:90% of polyvinyl alcohol and ionized water；Spin coating parameters when spin coating are as follows: 2500rpm, 300nm；It moves back
120 DEG C of annealing temperature when fiery, annealing time 30 minutes.
Preferably, in S4, the component and its mass ratio of IGZO target are In2O3: Ga2O3: ZnO=1:1:2, purity >
99.9999%.
After adopting the above scheme, the beneficial effects of the present invention are:
(1) the grade doping IGZO thin film transistor (TFT) and its preparation side that the present invention provides a kind of based on organic insulator
Method, by depositing the different IGZO film of 3 layer components on organic insulator, thus to reduce in sputtering process to organic exhausted
The destruction of edge layer, lowest level IGZO film use lower 80~100W of sputtering power, higher partial pressure of oxygen 5%-8%, to obtain
Defect it is less, the opposed flattened buffer layer in surface reduces the boundary defect of semiconductor layer and organic insulator, this layer is most
Munificent degree is in 1~3nm；Middle layer IGZO film uses lower 80~100W of sputtering power, lower partial pressure of oxygen 0%-2%,
The channel of high conductivity is obtained, is conducive to the transmission of electronics, this layer of optimal thickness is in 2~4nm；Top layer's IGZO film uses
Higher 150~250W of sputtering power, partial pressure of oxygen are in 2%-3%, are mixed by regulating and controlling the thickness of this layer come accuracy controlling gradient
The carrier concentration of miscellaneous IGZO semiconductor layer, this thickness degree can regulate and control in 30~60nm etc, the switch of obtained device performance
Than being up to 6.2 × 104, carrier mobility is up to 4.6cm2v-1s-1, can be into one by subsequent thermal anneal process
Step reduces the defect of active layer.
(2) organic insulator that the device uses also has good degradability, can solve electricity to a certain extent
Biological pollution brought by sub- rubbish is with a wide range of applications in flexible and transparence display field.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the grade doping IGZO thin film transistor (TFT) of the invention based on organic insulator；
Fig. 2 is that the present invention is based on the transfer characteristic curves of the grade doping IGZO exemplary thin film transistors 1 of organic insulator；
Fig. 3 is that the present invention is based on the transfer characteristic curves of the grade doping IGZO exemplary thin film transistors 2 of organic insulator；
Marked in the figure: 1- substrate, 2- gate electrode, 3- organic insulator, 4- grade doping IGZO semiconductor layer, 41- are most lower
Layer IGZO film, 42- middle layer IGZO film, 43- top layer IGZO film, 5- source electrode, 6- drain electrode.
Specific embodiment
Detailed description is provided to the embodiment of the present invention below with reference to attached drawing.Although the present invention will be in conjunction with some specific
Embodiment is illustrated and illustrates, but should be noted that the present invention is not merely confined to these embodiments.On the contrary,
To modification or equivalent replacement that the present invention carries out, it is intended to be within the scope of the claims of the invention.
Embodiment 1
A kind of grade doping IGZO thin film transistor (TFT) based on organic insulator, which is characterized in that including from bottom to up according to
Substrate 1, gate electrode 2, organic insulator 3, the grade doping IGZO semiconductor layer 4 of secondary arrangement, grade doping IGZO semiconductor layer 4
It is upper to be equipped with source electrode 5 and drain electrode 6 side by side, wherein grade doping IGZO semiconductor layer 3 includes the lowest level that concentration is sequentially increased
IGZO film 41, top layer's IGZO film 43, middle layer IGZO film 42.
Specifically, the material of substrate 1 is glass；The material of gate electrode 2 be tin indium oxide, gate electrode 2 with a thickness of
200nm；The material of organic insulator 3 is polymethyl methacrylate, with a thickness of 200nm；Grade doping IGZO semiconductor layer 4
In, the partial pressure of oxygen of lowest level IGZO film 41 is 5%, and with a thickness of 2nm, the partial pressure of oxygen of middle layer IGZO film 42 is 1%, thickness
For 3nm, the partial pressure of oxygen of top layer's IGZO film 43 is 2%, with a thickness of 50nm；The material of source electrode 5 and drain electrode 6 is metal
Elemental silver, thickness are 150nm.When preparing IGZO thin film semiconductive layer, the difference of partial pressure of oxygen can directly result in each layer
Doping concentration is different.
The preparation method of the above-mentioned grade doping IGZO thin film transistor (TFT) based on organic insulator includes the following steps:
The cleaning of S1:ITO glass substrate, ito glass substrate are substrate 1；First acetone cleaning glass window base is stained with non-dust cloth
Piece surface removes the spot and dust of bulky grain, and the glass substrate after wiping is then placed on teflon substrate frame respectively
On, it is separately added into acetone, deionized water, isopropanol to it and is cleaned by ultrasonic, the time being cleaned by ultrasonic every time is 15 minutes, most
Substrate is dried up with nitrogen (purity > 99.99%) afterwards.
S2: gate electrode 2 is prepared；Tin indium oxide gate electrode is prepared on the surface of the S1 substrate 1 prepared by magnetron sputtering method
2；
S3: preparing organic insulator 3, and material is polymethyl methacrylate；By organic insulating material polymethylacrylic acid
Methyl esters (PMMA) is dissolved in methyl phenyl ethers anisole, mass ratio 10%:90%, and it is small that mixed solution is placed on stirring 24 in magnetic stirring apparatus
When after prepared by the method for spin coating, spin coating revolving speed are as follows: 1800rpm, spin-coating time are as follows: 1 minute, 80 DEG C of annealing temperature,
Annealing time 30 minutes.
S4: IGZO layers of grade doping (4) are prepared；It is prepared using the IGZO target of magnetically controlled DC sputtering；Prepare lowest level
Sputtering power when IGZO film (41) is 80~100W, partial pressure of oxygen 5%-8%；It is splashed when preparing middle layer IGZO film (42)
Penetrating power is 80~100W, partial pressure of oxygen 0%-2%；Prepare top layer IGZO film (43) when sputtering power be 150~
250W, partial pressure of oxygen 2%-3%；When preparing everywhere, Ar flow is maintained at 100sccm, and chamber pressure is maintained at 3mTorr.
S5: preparation source electrode 5 and drain electrode 6: by S4, treated that transistor is put into metal vacuum cavity, moves back to it
Fire processing, 150 DEG C of annealing temperature, annealing time 30 minutes, then pass through Vacuum sublimation, preparation source electrode 5 and drain electrode 6.
As shown in Fig. 2, being surveyed using the grade doping IGZO thin film transistor (TFT) based on organic insulator of above method preparation
The performance of examination is as follows: carrier mobility μ=2.5cm2V-1s-1, and on-off ratio is 6.2 × 104, it is seen then that device performance is more steady
It is fixed.
Embodiment 2
A kind of grade doping IGZO thin film transistor (TFT) based on organic insulator, which is characterized in that including from bottom to up according to
Substrate 1, gate electrode 2, organic insulator 3, the grade doping IGZO semiconductor layer 4 of secondary arrangement, grade doping IGZO semiconductor layer 4
It is upper to be equipped with source electrode 5 and drain electrode 6 side by side, wherein grade doping IGZO semiconductor layer 3 includes the lowest level that concentration is sequentially increased
IGZO film 41, top layer's IGZO film 43, middle layer IGZO film 42.
Specifically, the material of substrate 1 is glass；The material of gate electrode 2 be tin indium oxide, gate electrode 2 with a thickness of
200nm；The material of organic insulator 3 is polyvinyl alcohol, with a thickness of 200nm；In grade doping IGZO semiconductor layer 4, lowest level
The partial pressure of oxygen of IGZO film 41 is 4%, and with a thickness of 2nm, the partial pressure of oxygen of middle layer IGZO film 42 is 0%, with a thickness of 3nm, most
The partial pressure of oxygen of upper layer IGZO film 43 is 2%, with a thickness of 50nm；The material of source electrode 5 and drain electrode 6 is metal simple-substance silver,
Thickness is 150nm.
The preparation method of the above-mentioned grade doping IGZO thin film transistor (TFT) based on organic insulator includes the following steps:
The cleaning of S1:ITO glass substrate, ito glass substrate are substrate 1；First acetone cleaning glass window base is stained with non-dust cloth
Piece surface removes the spot and dust of bulky grain, and the glass substrate after wiping is then placed on teflon substrate frame respectively
On, it is separately added into acetone, deionized water, isopropanol to it and is cleaned by ultrasonic, the time being cleaned by ultrasonic every time is 15 minutes, most
Substrate is dried up with nitrogen (purity > 99.99%) afterwards.
S2: gate electrode 2 is prepared；Tin indium oxide gate electrode is prepared on the surface of the S1 substrate 1 prepared by magnetron sputtering method
2；
S3: preparing organic insulator 3, and material is polymethyl methacrylate；By organic insulating material polymethylacrylic acid
Methyl esters (PMMA) is dissolved in methyl phenyl ethers anisole, mass ratio 10%:90%, and it is small that mixed solution is placed on stirring 24 in magnetic stirring apparatus
When after prepared by the method for spin coating, spin coating revolving speed are as follows: 2500rpm, spin-coating time are as follows: 1 minute, 120 DEG C of annealing temperature,
Annealing time 30 minutes.
S4: grade doping IGZO layer 4 is prepared；It is prepared using the IGZO target of magnetically controlled DC sputtering；Prepare lowest level
Sputtering power when IGZO film 41 is 80W；Sputtering power is 100W when preparing middle layer IGZO film 42；Prepare top layer
Sputtering power when IGZO film 43 is 250W, and when preparing each layer, Ar flow is maintained at 100sccm, and chamber pressure is kept
In 3mTorr.
S5: preparation source electrode 5 and drain electrode 6: by S4, treated that transistor is put into metal vacuum cavity, moves back to it
Fire processing, 150 DEG C of annealing temperature, annealing time 30 minutes, then pass through Vacuum sublimation, preparation source electrode 5 and drain electrode 6.
As shown in figure 3, being surveyed using the grade doping IGZO thin film transistor (TFT) based on organic insulator of above method preparation
The performance of examination is as follows: carrier mobility μ=4.6cm2V-1s-1, and on-off ratio is 3 × 104, it is seen then that device performance is more steady
It is fixed.
Embodiment and attached drawing are only the common embodiment of the present invention specifically above.Obviously, claims are not being departed from
Can there are various supplements, modification and replacement under the premise of the spirit of that invention and invention scope that are defined.Those skilled in the art
It should be understood that the present invention in practical applications can be according to specific environment and job requirement under the premise of without departing substantially from invention criterion
It is varied in form, structure, layout, ratio, material, element, component and other aspects.Therefore, the embodiment being disclosed herein
It is merely to illustrate rather than limits, the range of the present invention is defined by appended claim and its legal equivalents, and is not limited to before this
Description.
Claims (9)
1. a kind of grade doping IGZO thin film transistor (TFT) based on organic insulator, which is characterized in that including from bottom to up successively
Substrate (1), gate electrode (2), organic insulator (3), the grade doping IGZO semiconductor layer (4) of arrangement, grade doping IGZO half
Source electrode (5) and drain electrode (6) are equipped in conductor layer (4) side by side, wherein grade doping IGZO semiconductor layer (3) includes concentration
Lowest level IGZO film (41), top layer's IGZO film (43), the middle layer IGZO film (42) being sequentially increased；
The partial pressure of oxygen of the lowest level IGZO film (41) of the grade doping IGZO semiconductor layer (4) is 5%-8%, with a thickness of 1
~3nm；The partial pressure of oxygen of middle layer IGZO film (42) is 0%-2%, and thickness is in 2~4nm；The oxygen of top layer's IGZO film (43)
Partial pressure is 2%-3%, with a thickness of 30~60nm.
2. a kind of grade doping IGZO thin film transistor (TFT) based on organic insulator according to claim 1, feature exist
In: the material of the substrate (1) is one of polyimides, polyethylene terephthalate or glass substrate.
3. a kind of grade doping IGZO thin film transistor (TFT) based on organic insulator according to claim 1, feature exist
In: the gate electrode (2) be tin indium oxide, gate electrode (2) with a thickness of 150~250nm.
4. a kind of grade doping IGZO thin film transistor (TFT) based on organic insulator according to claim 1, feature exist
In: the material of the organic insulator (3) be polymethyl methacrylate, polyvinyl alcohol, polycarbonate, one in polystyrene
Kind, with a thickness of 100~360nm.
5. a kind of grade doping IGZO thin film transistor (TFT) based on organic insulator according to claim 1, feature exist
In: the material of the source electrode (5) and the drain electrode (6) be tin indium oxide, zinc oxide, indium gallium zinc oxide, graphene,
The thickness of one of metal simple-substance silver, aluminium, gold, source electrode (5) and the drain electrode (6) is 100~200nm.
6. a kind of preparation method of the grade doping IGZO thin film transistor (TFT) based on organic insulator, which is characterized in that including such as
Lower step:
S1: preparation cleaning substrate (1)；First with the big particle in acetone wiping substrate (1) surface, then with week-base water, acetone, go from
Sub- water, ethyl alcohol or isopropanol are respectively cleaned by ultrasonic glass substrate, are finally dried up substrate (1) with nitrogen；
S2: gate electrode (2) are prepared；The surface of the substrate (1) prepared by magnetron sputtering method in S1 prepares tin indium oxide gate electrode
(2)；
S3: organic insulator (3) are prepared；The tin indium oxide gate electrode (2) prepared by the method for spin coating in S2 is prepared above
Organic insulator (3), then carries out thermal annealing；
S4: IGZO layers of grade doping (4) are prepared；It is prepared using the IGZO target of magnetically controlled DC sputtering；Prepare lowest level IGZO
Sputtering power when film (41) is 80~100W, partial pressure of oxygen 5%-8%；Function is sputtered when preparing middle layer IGZO film (42)
Rate is 80~100W, partial pressure of oxygen 0%-2%；Sputtering power when preparing top layer IGZO film (43) is 150~250W, oxygen
Partial pressure is 2%-3%；When preparing everywhere, Ar flow is maintained at 100sccm, and chamber pressure is maintained at 3mTorr；
S5: preparation source electrode (5) and drain electrode (6): by S4, treated that transistor is put into metal vacuum cavity, moves back to it
Fire processing, 150 DEG C of annealing temperature, annealing time 30 minutes, then pass through vacuum thermal evaporation, magnetron sputtering, electron beam evaporation, silk screen
Any one method preparation source electrode (5) and drain electrode (6) in printing, spraying.
7. a kind of preparation side of grade doping IGZO thin film transistor (TFT) based on organic insulator according to claim 6
Method, which is characterized in that in S3, the material of organic insulator (3) is polymethyl methacrylate, when preparation, first by poly- methyl-prop
E pioic acid methyl ester is dissolved in methyl phenyl ethers anisole, and the mass ratio of polymethyl methacrylate and methyl phenyl ethers anisole is 10%:90%, spin coating when spin coating
Parameter are as follows: 1800rpm, 280nm；Parameter when annealing are as follows: 80 DEG C of annealing temperature, annealing time 30 minutes.
8. a kind of preparation side of grade doping IGZO thin film transistor (TFT) based on organic insulator according to claim 6
Method, which is characterized in that in S3, the material of organic insulator (3) is polyvinyl alcohol, when preparation, first by polyvinyl alcohol be dissolved in from
In sub- water, the mass ratio 10%:90% of polyvinyl alcohol and ionized water；Spin coating parameters when spin coating are as follows: 2500rpm, 300nm；It moves back
120 DEG C of annealing temperature when fiery, annealing time 30 minutes.
9. a kind of preparation side of grade doping IGZO thin film transistor (TFT) based on organic insulator according to claim 6
Method, which is characterized in that in S4, the component and its mass ratio of IGZO target are In2O3: Ga2O3: ZnO=1:1:2, purity >
99.9999%.
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| CN107644936B (en) * | 2017-09-27 | 2024-02-27 | 信利半导体有限公司 | Organic thin film transistor and preparation method thereof |
| CN107611085B (en) * | 2017-10-24 | 2019-12-24 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of OLED (organic light emitting diode) back plate |
| CN112420847A (en) * | 2020-10-29 | 2021-02-26 | 深圳技术大学 | Preparation method of flexible InGaZnO thin film transistor |
| CN112436058A (en) * | 2020-10-29 | 2021-03-02 | 深圳技术大学 | Flexible InGaZnO thin film transistor and preparation method thereof |
| CN112366284A (en) * | 2020-11-10 | 2021-02-12 | 安徽熙泰智能科技有限公司 | Novel high-reflectivity Micro OELD anode structure with adjustable work function and preparation method thereof |
| CN112509974B (en) * | 2020-12-01 | 2021-07-02 | 绵阳惠科光电科技有限公司 | Preparation method of IGZO array substrate |
| CN112599420B (en) * | 2020-12-28 | 2022-08-26 | 绵阳惠科光电科技有限公司 | Preparation method of indium-gallium-zinc-oxygen-based multilayer structure thin film transistor |
| CN112652575B (en) * | 2020-12-28 | 2022-10-18 | 绵阳惠科光电科技有限公司 | Manufacturing method of thin film transistor array substrate |
| CN113314614A (en) * | 2021-05-28 | 2021-08-27 | 电子科技大学 | Oxide thin film transistor device based on nano-imprinting method and preparation method thereof |
| CN113504595A (en) * | 2021-07-22 | 2021-10-15 | 南京信息工程大学 | Switchable color filter based on doped indium gallium zinc oxide and preparation method thereof |
| CN114122014A (en) * | 2021-11-12 | 2022-03-01 | 惠州华星光电显示有限公司 | Array substrate, preparation method thereof and display panel |
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