CN107123397B - AMOLED pixel-driving circuit and image element driving method - Google Patents
AMOLED pixel-driving circuit and image element driving method Download PDFInfo
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- CN107123397B CN107123397B CN201710449019.8A CN201710449019A CN107123397B CN 107123397 B CN107123397 B CN 107123397B CN 201710449019 A CN201710449019 A CN 201710449019A CN 107123397 B CN107123397 B CN 107123397B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
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- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The present invention provides a kind of AMOLED pixel-driving circuit and image element driving method.The AMOLED pixel-driving circuit uses 6T1C structure, including the first film transistor as driving thin film transistor (TFT), second thin film transistor (TFT), third thin film transistor (TFT), 4th thin film transistor (TFT), 5th thin film transistor (TFT), 6th thin film transistor (TFT), capacitor, and Organic Light Emitting Diode, the first scanning signal is accessed in circuit, second scanning signal, third scanning signal, 4th scanning signal, voltage data signal, initialization voltage, power supply positive voltage, and power supply negative voltage, the circuit is capable of the threshold voltage of effective compensation driving thin film transistor (TFT), solve the problems, such as that the electric current that Organic Light Emitting Diode is flowed through as caused by threshold voltage shift is unstable, guarantee that the light emission luminance of Organic Light Emitting Diode is uniform, improve the display effect of picture.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of AMOLED pixel-driving circuits and image element driving method.
Background technique
Organic Light Emitting Diode (Organic Light Emitting Display, OLED) display device has spontaneous
Light, driving voltage are low, luminous efficiency is high, the response time is short, clarity and contrast are high, nearly 180 ° of visual angles, use temperature ranges
Width is known as being the display for most having development potentiality by industry, it can be achieved that many advantages, such as Flexible Displays are with large area total colouring
Device.
OLED display according to driving method can be divided into passive matrix OLED (Passive Matrix OLED,
) and active array type OLED (Active Matrix OLED, AMOLED) two major classes, i.e. directly addressing and film crystal PMOLED
Manage two class of (Thin Film Transistor, TFT) matrix addressing.Wherein, AMOLED has the pixel in array arrangement, belongs to
In active display type, luminous efficacy is high, is typically used as large scale display device high-definition.
AMOLED is current driving apparatus, when there is electric current to flow through Organic Light Emitting Diode, organic light-emitting diode,
And light emission luminance is determined by the electric current for flowing through Organic Light Emitting Diode itself.Most of existing integrated circuit (Integrated
Circuit, IC) voltage signal is all only transmitted, therefore the pixel-driving circuit of AMOLED needs to complete that voltage signal is changed into electricity
Flow the task of signal.Traditional AMOLED pixel-driving circuit is usually 2T1C, i.e., two thin film transistor (TFT)s add a capacitor
Voltage transformation is electric current by structure.
As shown in Figure 1, a kind of existing 2T1C pixel-driving circuit for AMOLED, including first film transistor
T10, the second thin film transistor (TFT) T20, capacitor C10 and Organic Light Emitting Diode D10, the first film transistor T10 are driving
Thin film transistor (TFT), the second thin film transistor (TFT) T20 are switching thin-film transistor, and the capacitor C10 is storage capacitance.Specifically
Ground, the grid of the second thin film transistor (TFT) T20 access scanning drive signal Gate, source electrode incoming data signal Data, drain electrode
It is electrically connected the grid of first film transistor T10；The source electrode of the first film transistor T10 accesses power supply positive voltage
OVDD, drain electrode are electrically connected the anode of organic light emitting diode D10；One end of capacitor C10 is electrically connected first film transistor
The grid of T10, the other end are electrically connected the source electrode of first film transistor T10, and the cathode of Organic Light Emitting Diode D10 accesses electricity
Source negative voltage OVSS.The 2T1C pixel-driving circuit flows through the electricity of Organic Light Emitting Diode D10 when driving to AMOLED
Stream meets:
I=k × (Vgs-Vth)2；
Wherein, I is the electric current for flowing through Organic Light Emitting Diode D10, and k is the intrinsic conduction factor for driving thin film transistor (TFT),
Vgs is driving thin film transistor (TFT), that is, first film transistor T10 grid and source electrode voltage difference, and Vth is driving thin film transistor (TFT)
That is the threshold voltage of first film transistor T10, it is seen that flow through the electric current and driving thin film transistor (TFT) of Organic Light Emitting Diode D10
Threshold voltage it is related.
Due to unstability of panel processing procedure etc., so that the driving film in panel in each pixel-driving circuit is brilliant
The threshold voltage of body pipe creates a difference, even if the driving film crystalline substance being applied in each pixel-driving circuit that data voltage is equal
Body pipe also will appear the inconsistent situation of the electric current of inflow Organic Light Emitting Diode, cause the homogeneity of image quality difficult
To realize.And with the passage of driving thin film transistor (TFT) driving time, material meeting aging, the variation of thin film transistor (TFT) cause
It drives the threshold voltage of thin film transistor (TFT) to generate drift, and the degree of aging of thin-film-transistor material is different, causes each driving thin
The threshold voltage shift amount of film transistor is different, will cause the non-uniform phenomenon of Display panel, and can make to drive film crystal
The cut-in voltage of pipe rises, and flows into the current reduction of Organic Light Emitting Diode, leads to panel luminance reduction, luminous efficiency decline etc.
Problem.
Summary of the invention
The purpose of the present invention is to provide a kind of AMOLED pixel-driving circuits, being capable of effective compensation driving thin film transistor (TFT)
Threshold voltage, solve the problems, such as that the electric current that Organic Light Emitting Diode is flowed through as caused by threshold voltage shift is unstable, guarantee
The light emission luminance of Organic Light Emitting Diode is uniform, improves the display effect of picture.
The object of the invention is also to provide a kind of AMOLED image element driving methods, being capable of effective compensation driving film crystal
The threshold voltage of pipe solves the problems, such as that the electric current that Organic Light Emitting Diode is flowed through as caused by threshold voltage shift is unstable, protects
The light emission luminance for demonstrate,proving Organic Light Emitting Diode is uniform, improves the display effect of picture.
To achieve the above object, the present invention provides a kind of AMOLED pixel-driving circuits, comprising: the first film crystal
Pipe, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th film crystal
Pipe, capacitor and Organic Light Emitting Diode；
The grid of the first film transistor is electrically connected first node, and source electrode is electrically connected second node, drain electrode electricity
Property connection third node；
The grid of second thin film transistor (TFT) accesses the first scanning signal, and source electrode is electrically connected first node, drain electrode electricity
Property connection third node；
The grid of the third thin film transistor (TFT) accesses the second scanning signal, and source electrode accesses initialization voltage or data-signal
Voltage, drain electrode are electrically connected second node；
The grid of 4th thin film transistor (TFT) accesses third scanning signal, and source electrode is electrically connected third node, drain electrode electricity
Property connection Organic Light Emitting Diode anode；
The grid of 5th thin film transistor (TFT) accesses third scanning signal, and source electrode accesses power supply positive voltage, and drain electrode is electrically
Connect second node；
The grid of 6th thin film transistor (TFT) accesses the 4th scanning signal, and source electrode is electrically connected third thin film transistor (TFT)
Source electrode, drain electrode are electrically connected third node；
Power supply positive voltage is accessed in one end of the capacitor, and the other end is electrically connected first node；
The cathode of the Organic Light Emitting Diode accesses power supply negative voltage.
The first film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT) and the 6th thin film transistor (TFT) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or
Amorphous silicon film transistor.
When first scanning signal, the second scanning signal, third scanning signal and the 4th scanning signal pass through outside
Sequence controller generates.
The first film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT), the 6th thin film transistor (TFT) are P-type TFT.
First scanning signal, the second scanning signal, third scanning signal and the 4th scanning signal are combined successively right
It should be in initial phase, voltage data signal and threshold voltage difference memory phase and luminescence display stage；
In the initial phase, the source electrode of the third thin film transistor (TFT) accesses initialization voltage, first scanning
Signal is low potential, and second scanning signal is high potential, and the third scanning signal is high potential, the 4th scanning letter
Number be low potential；
It is accessed in the source electrode of the voltage data signal and threshold voltage difference memory phase, the third thin film transistor (TFT)
Voltage data signal, first scanning signal are low potential, and second scanning signal is low potential, the third scanning letter
Number be high potential, the 4th scanning signal be high potential；
In the luminescence display stage, first scanning signal is high potential, and second scanning signal is high potential,
The third scanning signal is low potential, and the 4th scanning signal is high potential.
The present invention also provides a kind of AMOLED image element driving methods, include the following steps:
Step 1 provides an AMOLED pixel-driving circuit；
The AMOLED pixel-driving circuit includes: first film transistor, the second thin film transistor (TFT), third film crystal
Pipe, the 4th thin film transistor (TFT), the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), capacitor and Organic Light Emitting Diode；
The grid of the first film transistor is electrically connected first node, and source electrode is electrically connected second node, drain electrode electricity
Property connection third node；
The grid of second thin film transistor (TFT) accesses the first scanning signal, and source electrode is electrically connected first node, drain electrode electricity
Property connection third node；
The grid of the third thin film transistor (TFT) accesses the second scanning signal, and source electrode accesses initialization voltage or data-signal
Voltage, drain electrode are electrically connected second node；
The grid of 4th thin film transistor (TFT) accesses third scanning signal, and source electrode is electrically connected third node, drain electrode electricity
Property connection Organic Light Emitting Diode anode；
The grid of 5th thin film transistor (TFT) accesses third scanning signal, and source electrode accesses power supply positive voltage, and drain electrode is electrically
Connect second node；
The grid of 6th thin film transistor (TFT) accesses the 4th scanning signal, and source electrode is electrically connected third thin film transistor (TFT)
Source electrode, drain electrode are electrically connected third node；
Power supply positive voltage is accessed in one end of the capacitor, and the other end is electrically connected first node；
The cathode of the Organic Light Emitting Diode accesses power supply negative voltage；
The first film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT), the 6th thin film transistor (TFT) are P-type TFT；
Step 2, into initial phase；
The source electrode of the third thin film transistor (TFT) accesses initialization voltage, and first scanning signal provides low potential, institute
The second thin film transistor (TFT) opening is stated, second scanning signal provides high potential, and the third thin film transistor (TFT) is closed, and described the
Three scanning signals provide high potential, and the four, the 5th thin film transistor (TFT) is closed, and the 4th scanning signal provides low potential,
6th thin film transistor (TFT) is opened, and initialization voltage is written in first node；
Step 3, into voltage data signal and threshold voltage difference memory phase；
The source electrode incoming data signal voltage of the third thin film transistor (TFT), first scanning signal provide low potential,
Second thin film transistor (TFT) is opened, and second scanning signal provides low potential, and the third thin film transistor (TFT) is opened, described
Third scanning signal provides high potential, and the four, the 5th thin film transistor (TFT) is closed, and the 4th scanning signal provides high electricity
Position, the 6th thin film transistor (TFT) are closed, and the voltage of first node is charged to Vdata-Vth by voltage data signal, wherein Vth
For the threshold voltage of first film transistor, Vdata is voltage data signal；
Step 4, into the luminescence display stage；
First scanning signal provides high potential, and second thin film transistor (TFT) is closed, and second scanning signal mentions
For high potential, the third thin film transistor (TFT) is closed, and the third scanning signal provides low potential, the four, the 5th film
Transistor is opened, and the 4th scanning signal provides high potential, and the 6th thin film transistor (TFT) is closed, the electricity of the first node
It is pressed under the memory action of capacitor and keeps Vdata-Vth, power supply positive voltage, the organic light-emitting diodes are written in the second node
Pipe shines, and the electric current for flowing through the Organic Light Emitting Diode is unrelated with the threshold voltage of first film transistor.
The first film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th
Thin film transistor (TFT) and the 6th thin film transistor (TFT) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or
Amorphous silicon film transistor.
When first scanning signal, the second scanning signal, third scanning signal and the 4th scanning signal pass through outside
Sequence controller generates.
Beneficial effects of the present invention: a kind of AMOLED pixel-driving circuit provided by the invention, using 6T1C structure, including
First film transistor, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th film crystal as driving thin film transistor (TFT)
Pipe, the 5th thin film transistor (TFT), the 6th thin film transistor (TFT), capacitor and Organic Light Emitting Diode access the first scanning letter in circuit
Number, the second scanning signal, third scanning signal, the 4th scanning signal, voltage data signal, initialization voltage, power supply positive voltage,
And power supply negative voltage, the circuit are capable of the threshold voltage of effective compensation driving thin film transistor (TFT), solution is led by threshold voltage shift
The unstable problem of the electric current for flowing through Organic Light Emitting Diode caused, guarantees that the light emission luminance of Organic Light Emitting Diode is uniform, changes
The display effect of kind picture.A kind of AMOLED image element driving method provided by the invention, being capable of effective compensation driving film crystal
The threshold voltage of pipe solves the problems, such as that the electric current that Organic Light Emitting Diode is flowed through as caused by threshold voltage shift is unstable, protects
The light emission luminance for demonstrate,proving Organic Light Emitting Diode is uniform, improves the display effect of picture.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the circuit diagram of the existing 2T1C pixel-driving circuit for AMOLED；
Fig. 2 is the circuit diagram of AMOLED pixel-driving circuit of the invention；
Fig. 3 is the timing diagram of AMOLED pixel-driving circuit of the invention；
Fig. 4 is the schematic diagram of the step 2 of AMOLED image element driving method of the invention；
Fig. 5 is the schematic diagram of the step 3 of AMOLED image element driving method of the invention；
Fig. 6 is the schematic diagram of the step 4 of AMOLED image element driving method of the invention.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Please refer to figs. 2 and 3, and combines fig. 4 to fig. 6, and the present invention provides a kind of AMOLED pixel-driving circuit, comprising:
First film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th thin film transistor (TFT) T4, the 5th film
Transistor T5, the 6th thin film transistor (TFT) T6, capacitor C1 and Organic Light Emitting Diode D1；
The connection type of specific each element are as follows: the grid of the first film transistor T1 is electrically connected first node G, source
Pole is electrically connected second node S, and drain electrode is electrically connected third node D；The grid access first of the second thin film transistor (TFT) T2
Scanning signal Scan1, source electrode are electrically connected first node G, and drain electrode is electrically connected third node D；The third thin film transistor (TFT)
The grid of T3 accesses the second scanning signal Scan2, and source electrode accesses initialization voltage Vini or voltage data signal Vdata, drain electrode
It is electrically connected second node S；The grid of the 4th thin film transistor (TFT) T4 accesses third scanning signal Scan3, and source electrode electrically connects
Third node D is met, drain electrode is electrically connected the anode of organic light emitting diode D1；The grid of the 5th thin film transistor (TFT) T5 accesses
Third scanning signal Scan3, source electrode access power supply positive voltage OVDD, and drain electrode is electrically connected second node S；6th film is brilliant
The grid of body pipe T6 accesses the 4th scanning signal Scan4, and source electrode is electrically connected the source electrode of third thin film transistor (TFT) T3, and drain electrode is electrically
Connect third node D；Power supply positive voltage OVDD is accessed in one end of the capacitor C1, and the other end is electrically connected first node G；It is described
The cathode of Organic Light Emitting Diode D1 accesses power supply negative voltage OVSS.
Specifically, the first film transistor T1 is driving thin film transistor (TFT), for driving Organic Light Emitting Diode D1
It shines, the AMOLED pixel-driving circuit can compensate for the threshold value electricity of the driving i.e. first film transistor T1 of thin film transistor (TFT)
Pressure.Specifically, the first film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th film crystal
Pipe T4, the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 are low-temperature polysilicon film transistor, oxide semiconductor
Thin film transistor (TFT) or amorphous silicon film transistor.The first scanning signal Scan1, the second scanning signal Scan2, third are swept
It retouches signal Scan3 and the 4th scanning signal Scan4 and passes through external sequence controller and generate.
Specifically, the first film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th thin
Film transistor T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6 are P-type TFT.
Further, referring to Fig. 3, the first scanning signal Scan1, the second scanning signal Scan2, third scanning letter
Number Scan3 and the 4th scanning signal Scan4, which is combined, successively corresponds to initial phase S1, voltage data signal and threshold value electricity
Pressure difference memory phase S2 and luminescence display stage S3；
Referring to Fig. 4, the source electrode of the third thin film transistor (TFT) T3 accesses initialization voltage in the initial phase S1
Vini, the first scanning signal Scan1 are low potential, and the second thin film transistor (TFT) T2 is opened, second scanning signal
Scan2 is high potential, and the third thin film transistor (TFT) T3 is closed, and the third scanning signal Scan3 is high potential, described the
Four, the 5th thin film transistor (TFT) T4, T5 is closed, and the 4th scanning signal Scan4 is low potential, the 6th thin film transistor (TFT) T6
It opens, first node G is written through the 6th open thin film transistor (TFT) T6, the second thin film transistor (TFT) T2 in initialization voltage Vini, right
The other end of first node G namely capacitor C1 carry out the initialization of current potential, due to the 4th film crystal in initial phase S1
Pipe T4 is disconnected, and Organic Light Emitting Diode D1 does not shine；
Referring to Fig. 5, in the voltage data signal and threshold voltage difference memory phase S2, the third film crystal
Source electrode incoming data signal the voltage Vdata, the first scanning signal Scan1 of pipe T3 is low potential, and second film is brilliant
Body pipe T2 is opened, and the second scanning signal Scan2 is low potential, and the third thin film transistor (TFT) T3 is opened, and the third is swept
Retouching signal Scan3 is high potential, and described four, the 5th thin film transistor (TFT) T4, T5 are closed, and the 4th scanning signal Scan4 is
High potential, the 6th thin film transistor (TFT) T6 are closed, and voltage data signal Vdata writes via open third thin film transistor (TFT) T3
Enter second node S, and via third thin film transistor (TFT) T3, first film transistor T1 and the second thin film transistor (TFT) T2 to first
Node G charges, until the source electrode of voltage difference namely first film transistor T1 between second node S and first node G
Its threshold voltage is reached with the voltage difference of grid, the voltage of first node G no longer rises, and the voltage of first node G is the at this time
The difference of the voltage of two node S, that is, voltage data signal Vdata and first film transistor T1 threshold voltage vt h, i.e. Vdata-
Vth completes the storage to voltage data signal Vdata and threshold voltage vt h difference, in voltage data signal and threshold voltage difference
Since the 4th thin film transistor (TFT) T4 is closed, Organic Light Emitting Diode D1's value memory phase S2 does not shine；
Referring to Fig. 6, in the luminescence display stage S3, the first scanning signal Scan1 is high potential, described second
Thin film transistor (TFT) T2 is closed, and the second scanning signal Scan2 is high potential, and the third thin film transistor (TFT) T3 is closed, described
Third scanning signal Scan3 is low potential, and described four, the 5th thin film transistor (TFT) T4, T5 are opened, the 4th scanning signal
Scan4 is high potential, and the 6th thin film transistor (TFT) T6 is closed, at this point, due to the memory action of capacitor C1, first node G
That is it is constant that the grid voltage of first film transistor T1 still maintains Vdata-Vth, and power supply positive voltage OVDD is via open
The source electrode of second node S namely first film transistor T1 is written in 5th thin film transistor (TFT) T5, then first film transistor at this time
The source grid voltage difference of T1 is OVDD-Vdata+Vth, and Organic Light Emitting Diode D1 shines.
It should be noted that having been flowed through using P-type TFT as when driving thin film transistor (TFT) according to the prior art
The formula of the electric current of machine light emitting diode:
I=K (Vsg-Vth)2；
Wherein, I is the electric current for flowing through Organic Light Emitting Diode D1, and K is driving thin film transistor (TFT) namely the first film crystal
The intrinsic conduction factor of pipe T1, Vsg be drive the source grid voltage of thin film transistor (TFT) namely first film transistor T1 poor, and this
When first film transistor T1 source grid voltage difference be OVDD-Vdata+Vth, therefore I=K (Vsg-Vth)2=K (OVDD-
Vdata+Vth-Vth)2=K (OVDD-Vdata)2, it is seen that Organic Light Emitting Diode D1 flows through the organic light-emitting diodes when shining
The electric current of pipe D1 is unrelated with the threshold voltage of first film transistor T1, is able to solve and is floated by driving thin film transistor (TFT) threshold voltage
The unstable problem of the electric current of Organic Light Emitting Diode is flowed through caused by shifting, keeps the light emission luminance of Organic Light Emitting Diode uniform,
Improve the display effect of picture.
Fig. 4 to 6 is please referred to, and combines Fig. 2 and Fig. 3, is based on above-mentioned AMOLED pixel-driving circuit, the present invention also provides one
Kind AMOLED image element driving method, includes the following steps:
Step 1, referring to Fig. 2, provide an AMOLED pixel-driving circuit；
The AMOLED pixel-driving circuit includes: first film transistor T1, the second thin film transistor (TFT) T2, third film
Transistor T3, the 4th thin film transistor (TFT) T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6, capacitor C1 and organic light emission
Diode D1；
The connection type of specific each element are as follows: the grid of the first film transistor T1 is electrically connected first node G, source
Pole is electrically connected second node S, and drain electrode is electrically connected third node D；The grid access first of the second thin film transistor (TFT) T2
Scanning signal Scan1, source electrode are electrically connected first node G, and drain electrode is electrically connected third node D；The third thin film transistor (TFT)
The grid of T3 accesses the second scanning signal Scan2, and source electrode accesses initialization voltage Vini or voltage data signal Vdata, drain electrode
It is electrically connected second node S；The grid of the 4th thin film transistor (TFT) T4 accesses third scanning signal Scan3, and source electrode electrically connects
Third node D is met, drain electrode is electrically connected the anode of organic light emitting diode D1；The grid of the 5th thin film transistor (TFT) T5 accesses
Third scanning signal Scan3, source electrode access power supply positive voltage OVDD, and drain electrode is electrically connected second node S；6th film is brilliant
The grid of body pipe T6 accesses the 4th scanning signal Scan4, and source electrode is electrically connected the source electrode of third thin film transistor (TFT) T3, and drain electrode is electrically
Connect third node D；Power supply positive voltage OVDD is accessed in one end of the capacitor C1, and the other end is electrically connected first node G；It is described
The cathode of Organic Light Emitting Diode D1 accesses power supply negative voltage OVSS；
Wherein, the first film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th film
Transistor T4, the 5th thin film transistor (TFT) T5, the 6th thin film transistor (TFT) T6 are P-type TFT.
Specifically, the first film transistor T1 is driving thin film transistor (TFT), for driving Organic Light Emitting Diode D1
It shines, the AMOLED image element driving method can compensate for the threshold value electricity of the driving i.e. first film transistor T1 of thin film transistor (TFT)
Pressure.Specifically, the first film transistor T1, the second thin film transistor (TFT) T2, third thin film transistor (TFT) T3, the 4th film crystal
Pipe T4, the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 are low-temperature polysilicon film transistor, oxide semiconductor
Thin film transistor (TFT) or amorphous silicon film transistor.The first scanning signal Scan1, the second scanning signal Scan2, third are swept
It retouches signal Scan3 and the 4th scanning signal Scan4 and passes through external sequence controller and generate.
Step 2, referring to Fig. 4, into initial phase S1；
The source electrode of the third thin film transistor (TFT) T3 accesses initialization voltage Vini, and the first scanning signal Scan1 is mentioned
For low potential, the second thin film transistor (TFT) T2 is opened, and the second scanning signal Scan2 provides high potential, and the third is thin
Film transistor T3 is closed, and the third scanning signal Scan3 provides high potential, and described four, the 5th thin film transistor (TFT) T4, T5 are closed
It closes, the 4th scanning signal Scan4 provides low potential, and the 6th thin film transistor (TFT) T6 is opened, initialization voltage Vini warp
First node G is written in the 6th thin film transistor (TFT) T6, the second thin film transistor (TFT) T2 opened, to first node G's namely capacitor C1
The other end carries out the initialization of current potential, since the 4th thin film transistor (TFT) T4 is disconnected in initial phase S1, organic light-emitting diodes
Pipe D1 does not shine.
Step 3, referring to Fig. 5, into voltage data signal and threshold voltage difference memory phase S2；
Source electrode incoming data signal the voltage Vdata, the first scanning signal Scan1 of the third thin film transistor (TFT) T3
Low potential is provided, the second thin film transistor (TFT) T2 is opened, and the second scanning signal Scan2 provides low potential, the third
Thin film transistor (TFT) T3 is opened, and the third scanning signal Scan3 provides high potential, described four, the 5th thin film transistor (TFT) T4, T5
It closes, the 4th scanning signal Scan4 provides high potential, and the 6th thin film transistor (TFT) T6 is closed, voltage data signal
Second node S is written via open third thin film transistor (TFT) T3 in Vdata, and via third thin film transistor (TFT) T3, the first film
Transistor T1 and the second thin film transistor (TFT) T2 charge to first node G, until between second node S and first node G
The voltage difference of the source electrode and grid of voltage difference namely first film transistor T1 reaches its threshold voltage, the voltage of first node G
No longer rise, the voltage, that is, voltage data signal Vdata and the first film that the voltage of first node G is second node S at this time are brilliant
The difference of body pipe T1 threshold voltage vt h, i.e. Vdata-Vth are completed to voltage data signal Vdata and threshold voltage vt h difference
Storage, in voltage data signal and threshold voltage difference memory phase S2 since the 4th thin film transistor (TFT) T4 is closed, You Jifa
Optical diode D1 does not shine.
Step 4, referring to Fig. 6, into luminescence display stage S3；
The first scanning signal Scan1 provides high potential, and the second thin film transistor (TFT) T2 is closed, second scanning
Signal Scan2 provides high potential, and the third thin film transistor (TFT) T3 is closed, and the third scanning signal Scan3 provides low potential,
Described four, the 5th thin film transistor (TFT) T4, T5 are opened, and the 4th scanning signal Scan4 provides high potential, the 6th film
Transistor T6 is closed, at this point, due to the memory action of capacitor C1, the grid electricity of first node G namely first film transistor T1
Pressure still maintains that Vdata-Vth is constant, and the second section is written via the 5th open thin film transistor (TFT) T5 in power supply positive voltage OVDD
The source electrode of point S namely first film transistor T1, then the source grid voltage difference of first film transistor T1 is OVDD- at this time
Vdata+Vth, Organic Light Emitting Diode D1 shine.
It should be noted that having been flowed through using P-type TFT as when driving thin film transistor (TFT) according to the prior art
The formula of the electric current of machine light emitting diode:
I=K (Vsg-Vth)2；
Wherein, I is the electric current for flowing through Organic Light Emitting Diode D1, and K is driving thin film transistor (TFT) namely the first film crystal
The intrinsic conduction factor of pipe T1, Vsg be drive the source grid voltage of thin film transistor (TFT) namely first film transistor T1 poor, and this
When first film transistor T1 source grid voltage difference be OVDD-Vdata+Vth, therefore I=K (Vsg-Vth)2=K (OVDD-
Vdata+Vth-Vth)2=K (OVDD-Vdata)2, it is seen that Organic Light Emitting Diode D1 flows through the organic light-emitting diodes when shining
The electric current of pipe D1 is unrelated with the threshold voltage of first film transistor T1, is able to solve and is floated by driving thin film transistor (TFT) threshold voltage
The unstable problem of the electric current of Organic Light Emitting Diode is flowed through caused by shifting, keeps the light emission luminance of Organic Light Emitting Diode uniform,
Improve the display effect of picture.
In conclusion AMOLED pixel-driving circuit of the invention, using 6T1C structure, including as driving film crystal
The first film transistor of pipe, the second thin film transistor (TFT), third thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th film crystal
Pipe, the 6th thin film transistor (TFT), capacitor and Organic Light Emitting Diode access the first scanning signal, the second scanning letter in circuit
Number, third scanning signal, the 4th scanning signal, voltage data signal, initialization voltage, power supply positive voltage and power supply negative voltage,
The circuit is capable of the threshold voltage of effective compensation driving thin film transistor (TFT), and organic hair is flowed through in solution as caused by threshold voltage shift
The unstable problem of the electric current of optical diode guarantees that the light emission luminance of Organic Light Emitting Diode is uniform, improves the display effect of picture
Fruit.AMOLED image element driving method of the invention is capable of the threshold voltage of effective compensation driving thin film transistor (TFT), is solved by threshold value
The unstable problem of the electric current of Organic Light Emitting Diode is flowed through caused by voltage drift, guarantees the luminance of Organic Light Emitting Diode
Degree uniformly, improves the display effect of picture.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the appended right of the present invention
It is required that protection scope.
Claims (6)
1. a kind of AMOLED pixel-driving circuit characterized by comprising first film transistor (T1), the second film crystal
Manage (T2), third thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5), the 6th film crystal
Manage (T6), capacitor (C1) and Organic Light Emitting Diode (D1)；
The grid of the first film transistor (T1) is electrically connected first node (G), and source electrode is electrically connected second node (S),
Drain electrode is electrically connected third node (D)；
The grid of second thin film transistor (TFT) (T2) accesses the first scanning signal (Scan1), and source electrode is electrically connected first node
(G), drain electrode is electrically connected third node (D)；
The grid of the third thin film transistor (TFT) (T3) accesses the second scanning signal (Scan2), and source electrode accesses initialization voltage
(Vini) or voltage data signal (Vdata), drain electrode are electrically connected second node (S)；
The grid of 4th thin film transistor (TFT) (T4) accesses third scanning signal (Scan3), and source electrode is electrically connected third node
(D), drain electrode is electrically connected the anode of organic light emitting diode (D1)；
The grid of 5th thin film transistor (TFT) (T5) accesses third scanning signal (Scan3), and source electrode accesses power supply positive voltage
(OVDD), drain electrode is electrically connected second node (S)；
The grid of 6th thin film transistor (TFT) (T6) accesses the 4th scanning signal (Scan4), and source electrode is electrically connected third film
The source electrode of transistor (T3), drain electrode are electrically connected third node (D)；
Power supply positive voltage (OVDD) is accessed in one end of the capacitor (C1), and the other end is electrically connected first node (G)；
The cathode of the Organic Light Emitting Diode (D1) accesses power supply negative voltage (OVSS)；
First scanning signal (Scan1), the second scanning signal (Scan2), third scanning signal (Scan3) and the 4th sweep
It retouches signal (Scan4) and is combined and successively correspond to initial phase (S1), voltage data signal and threshold voltage difference storage rank
Section (S2) and luminescence display stage (S3)；
Initialization voltage (Vini) is accessed in the source electrode of the initial phase (S1), the third thin film transistor (TFT) (T3), institute
Stating the first scanning signal (Scan1) is low potential, and second scanning signal (Scan2) is high potential, the third scanning letter
Number (Scan3) is high potential, and the 4th scanning signal (Scan4) is low potential；
In the voltage data signal and threshold voltage difference memory phase (S2), the source electrode of the third thin film transistor (TFT) (T3)
Incoming data signal voltage (Vdata), first scanning signal (Scan1) are low potential, second scanning signal
It (Scan2) is low potential, the third scanning signal (Scan3) is high potential, and the 4th scanning signal (Scan4) is high electricity
Position；
In the luminescence display stage (S3), first scanning signal (Scan1) is high potential, second scanning signal
It (Scan2) is high potential, the third scanning signal (Scan3) is low potential, and the 4th scanning signal (Scan4) is high electricity
Position；
The first film transistor (T1), the second thin film transistor (TFT) (T2), third thin film transistor (TFT) (T3), the 4th film crystal
Pipe (T4), the 5th thin film transistor (TFT) (T5), the 6th thin film transistor (TFT) (T6) are P-type TFT.
2. AMOLED pixel-driving circuit as described in claim 1, which is characterized in that the first film transistor (T1),
Second thin film transistor (TFT) (T2), third thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5),
And the 6th thin film transistor (TFT) (T6) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon
Thin film transistor (TFT).
3. AMOLED pixel-driving circuit as described in claim 1, which is characterized in that first scanning signal (Scan1),
Second scanning signal (Scan2), third scanning signal (Scan3) and the 4th scanning signal (Scan4) pass through external timing control
Device processed generates.
4. a kind of AMOLED image element driving method, which comprises the steps of:
Step 1 provides an AMOLED pixel-driving circuit；
The AMOLED pixel-driving circuit includes: first film transistor (T1), the second thin film transistor (TFT) (T2), third film
Transistor (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5), the 6th thin film transistor (TFT) (T6), capacitor (C1),
And Organic Light Emitting Diode (D1)；
The grid of the first film transistor (T1) is electrically connected first node (G), and source electrode is electrically connected second node (S),
Drain electrode is electrically connected third node (D)；
The grid of second thin film transistor (TFT) (T2) accesses the first scanning signal (Scan1), and source electrode is electrically connected first node
(G), drain electrode is electrically connected third node (D)；
The grid of the third thin film transistor (TFT) (T3) accesses the second scanning signal (Scan2), and source electrode accesses initialization voltage
(Vini) or voltage data signal (Vdata), drain electrode are electrically connected second node (S)；
The grid of 4th thin film transistor (TFT) (T4) accesses third scanning signal (Scan3), and source electrode is electrically connected third node
(D), drain electrode is electrically connected the anode of organic light emitting diode (D1)；
The grid of 5th thin film transistor (TFT) (T5) accesses third scanning signal (Scan3), and source electrode accesses power supply positive voltage
(OVDD), drain electrode is electrically connected second node (S)；
The grid of 6th thin film transistor (TFT) (T6) accesses the 4th scanning signal (Scan4), and source electrode is electrically connected third film
The source electrode of transistor (T3), drain electrode are electrically connected third node (D)；
Power supply positive voltage (OVDD) is accessed in one end of the capacitor (C1), and the other end is electrically connected first node (G)；
The cathode of the Organic Light Emitting Diode (D1) accesses power supply negative voltage (OVSS)；
The first film transistor (T1), the second thin film transistor (TFT) (T2), third thin film transistor (TFT) (T3), the 4th film crystal
Pipe (T4), the 5th thin film transistor (TFT) (T5), the 6th thin film transistor (TFT) (T6) are P-type TFT；
Step 2, into initial phase (S1)；
The source electrode of the third thin film transistor (TFT) (T3) accesses initialization voltage (Vini), first scanning signal (Scan1)
Low potential is provided, second thin film transistor (TFT) (T2) is opened, and second scanning signal (Scan2) provides high potential, described
Third thin film transistor (TFT) (T3) is closed, and the third scanning signal (Scan3) provides high potential, and the four, the 5th film is brilliant
Body pipe (T4, T5) is closed, and the 4th scanning signal (Scan4) provides low potential, and the 6th thin film transistor (TFT) (T6) is opened,
Initialization voltage (Vini) is written in first node (G)；
Step 3, into voltage data signal and threshold voltage difference memory phase (S2)；
The source electrode incoming data signal voltage (Vdata) of the third thin film transistor (TFT) (T3), first scanning signal
(Scan1) low potential is provided, second thin film transistor (TFT) (T2) is opened, and second scanning signal (Scan2) provides low electricity
Position, the third thin film transistor (TFT) (T3) are opened, third scanning signal (Scan3) the offer high potential, and described four, the 5th
Thin film transistor (TFT) (T4, T5) is closed, and the 4th scanning signal (Scan4) provides high potential, the 6th thin film transistor (TFT)
(T6) it closes, the voltage of first node (G) is charged to Vdata-Vth by voltage data signal (Vdata), and wherein Vth is first
The threshold voltage of thin film transistor (TFT) (T1), Vdata are voltage data signal；
Step 4, into luminescence display stage (S3)；
First scanning signal (Scan1) provides high potential, and second thin film transistor (TFT) (T2) is closed, second scanning
Signal (Scan2) provides high potential, and the third thin film transistor (TFT) (T3) is closed, and the third scanning signal (Scan3) provides
Low potential, the four, the 5th thin film transistor (TFT) (T4, T5) are opened, and the 4th scanning signal (Scan4) provides high potential,
6th thin film transistor (TFT) (T6) is closed, and the voltage of the first node (G) is kept under the memory action of capacitor (C1)
Power supply positive voltage (OVDD) is written in Vdata-Vth, the second node (S), and the Organic Light Emitting Diode (D1) shines, and flows
Electric current through the Organic Light Emitting Diode (D1) is unrelated with the threshold voltage of first film transistor (T1).
5. AMOLED image element driving method as claimed in claim 4, which is characterized in that the first film transistor (T1),
Second thin film transistor (TFT) (T2), third thin film transistor (TFT) (T3), the 4th thin film transistor (TFT) (T4), the 5th thin film transistor (TFT) (T5),
And the 6th thin film transistor (TFT) (T6) be low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor or amorphous silicon
Thin film transistor (TFT).
6. AMOLED image element driving method as claimed in claim 4, which is characterized in that first scanning signal (Scan1),
Second scanning signal (Scan2), third scanning signal (Scan3) and the 4th scanning signal (Scan4) pass through external timing control
Device processed generates.
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| KR102482575B1 (en) * | 2017-10-31 | 2022-12-28 | 엘지디스플레이 주식회사 | Organic light emitting display device |
| CN108288457A (en) * | 2018-01-19 | 2018-07-17 | 昆山国显光电有限公司 | Pixel circuit and its driving method, display device |
| CN109087610A (en) * | 2018-08-20 | 2018-12-25 | 武汉华星光电半导体显示技术有限公司 | AMOLED pixel-driving circuit, driving method and display panel |
| CN110992890A (en) * | 2019-12-16 | 2020-04-10 | 福建华佳彩有限公司 | Pixel driving circuit and driving method |
| CN112419981B (en) * | 2020-12-01 | 2021-08-24 | 重庆邮电大学 | AMOLED pixel driving circuit and driving method |
| CN112489599B (en) * | 2020-12-23 | 2022-09-27 | 武汉华星光电半导体显示技术有限公司 | AMOLED pixel driving circuit, driving method and display panel |
| CN114974097A (en) * | 2022-06-29 | 2022-08-30 | 武汉华星光电半导体显示技术有限公司 | Pixel circuit and display panel |
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| KR101324756B1 (en) * | 2005-10-18 | 2013-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device and driving method thereof |
| KR101152466B1 (en) * | 2010-06-30 | 2012-06-01 | 삼성모바일디스플레이주식회사 | Pixel and Organic Light Emitting Display Device Using the Same |
| KR101859474B1 (en) * | 2011-09-05 | 2018-05-23 | 엘지디스플레이 주식회사 | Pixel circuit of organic light emitting diode display device |
| CN103295525B (en) * | 2013-05-31 | 2015-09-30 | 京东方科技集团股份有限公司 | Image element circuit and driving method, organic electroluminescence display panel and display device |
| CN104575372B (en) * | 2013-10-25 | 2016-10-12 | 京东方科技集团股份有限公司 | A kind of AMOLED pixel-driving circuit and driving method, array base palte |
| CN104282268A (en) * | 2014-10-09 | 2015-01-14 | 友达光电股份有限公司 | Pixel compensation circuit of active matrix organic light emitting diode (AMOLED) displayer |
| CN104485071B (en) * | 2014-12-22 | 2017-08-25 | 昆山国显光电有限公司 | Image element circuit and its driving method and active matrix/organic light emitting display |
| KR102349494B1 (en) * | 2015-08-13 | 2022-01-12 | 삼성디스플레이 주식회사 | Organic light emitting display device |
| CN105161051A (en) * | 2015-08-21 | 2015-12-16 | 京东方科技集团股份有限公司 | Pixel circuit and driving method therefor, array substrate, display panel and display device |
| CN106297662B (en) * | 2016-09-09 | 2018-06-01 | 深圳市华星光电技术有限公司 | AMOLED pixel-driving circuits and driving method |
| CN106448557B (en) * | 2016-12-26 | 2019-05-03 | 深圳市华星光电技术有限公司 | Light emission drive circuit and organic light emitting display |
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