CN107116308B - Waveguide micro/nano processing system and processing method - Google Patents
Waveguide micro/nano processing system and processing method Download PDFInfo
- Publication number
- CN107116308B CN107116308B CN201710305485.9A CN201710305485A CN107116308B CN 107116308 B CN107116308 B CN 107116308B CN 201710305485 A CN201710305485 A CN 201710305485A CN 107116308 B CN107116308 B CN 107116308B
- Authority
- CN
- China
- Prior art keywords
- freedom
- real
- light source
- degree
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
- B23K26/705—Beam measuring device
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The present invention provides the waveguide micro/nano processing system and processing method that a kind of processing cost is low, precision is high, consistency is good.Waveguide micro/nano processing system according to the present invention characterized by comprising light source portion provides laser beam；Processing department focuses the laser beam to and carries out lithography process in substrate, and carries out real-time monitoring to process, comprising: Zoom lens, three-dimensional appearance instrument, camera and temperature measurer；Multi-degree-of-freedom workbench drives substrate to be moved in multiple degrees of freedom according to preset waveguide patterns；Optical platform for placing multi-degree-of-freedom workbench, and completely cuts off extraneous vibration；The side of multi-degree-of-freedom workbench is arranged in air blowing portion, blows against machining area；The other side of multi-degree-of-freedom workbench is arranged in suction unit, blows the gas come to air blowing portion and absorbs；Control unit connects and controls the operation of light source portion, processing department, multi-degree-of-freedom workbench, optical platform, air blowing portion and suction unit.
Description
Technical field
The invention belongs to minute manufacturing manufacture fields, and in particular to a kind of waveguide micro/nano processing system and corresponding processing
Method.
Technical background
When propagating in the restrained waveguide medium determined in the medium of light wave, the light wave channel being made of this medium is known as
Optical medium waveguide, abbreviation waveguide.The production of optical waveguide mostly uses the methods of chemical etching, ion etching, the above method at present
Procedure of processing is cumbersome, more demanding to processing environment, and processing cost is higher.
Summary of the invention
The present invention be to solve the above-mentioned problems and carry out, and it is an object of the present invention to provide a kind of processing cost is low, precision is high, one
Cause property good waveguide micro/nano processing system and processing method.
The present invention to achieve the goals above, uses following scheme:
<scheme one>
The present invention provides a kind of waveguide micro/nano processing system characterized by comprising light source portion provides laser beam；Processing
Portion is arranged in the optical path in light source portion, and lithography process is carried out in substrate for focusing the laser beam to, and carries out to process
Real-time monitoring, comprising: Zoom lens, three-dimensional appearance instrument, camera and temperature measurer；Multi-degree-of-freedom workbench, bearing basement, and
Make substrate towards processing department, drives substrate to be moved in multiple degrees of freedom according to preset waveguide patterns；Optics is flat
Platform for placing multi-degree-of-freedom workbench, and completely cuts off extraneous vibration；The side of multi-degree-of-freedom workbench is arranged in air blowing portion, right
Machining area blow；The other side of multi-degree-of-freedom workbench is arranged in suction unit, to air blowing portion blow come gas into
Row is absorbed；Control unit connects and controls light source portion, processing department, multi-degree-of-freedom workbench, optical platform, air blowing portion and air-breathing
The operation in portion, wherein the surface topography of the three-dimensional appearance instrument photoetching slot in real-time monitoring substrate in process, and by surface
Pattern Real-time Feedback compares the desired surface topography of the surface topography received and storage to control unit, control unit, real
When adjust light source portion relevant parameter and Zoom lens focal length, in a certain range by surface topography control errors.
Further, waveguide micro/nano processing system provided by the invention can also have the feature that control unit is being adjusted
The relevant parameter in related light source portion includes at least when surface topography: pulse frequency, laser power and pulse duty factor.
Further, waveguide micro/nano processing system provided by the invention can also have the feature that light source portion includes swashing
Light device, the laser be nanosecond, picosecond and femto-second laser in any one.
Further, waveguide micro/nano processing system provided by the invention can also have the feature that camera is CCD industry
Whether camera has impurity particle object on real-time monitoring laser beam scan path in process, when monitoring scan path
On there are when impurity particle object, control unit adjusts the movement of multi-degree-of-freedom workbench in real time, and in real time adjust light source portion correlation
The focal length of parameter and Zoom lens, so that laser beam focus is carried out fixed point ablation at impurity particle object.
Further, waveguide micro/nano processing system provided by the invention can also have the feature that ablation impurity particle
The relevant parameter in the light source portion adjusted required for object includes at least: laser facula size and laser power.
Further, waveguide micro/nano processing system provided by the invention can also have the feature that temperature measurer is being processed
The surface temperature being photo-etched in real-time monitoring substrate at processing in the process, and by surface temperature Real-time Feedback to control unit, control
Portion compares the temperature threshold of the surface temperature received and setting, and in the case where surface temperature is higher than temperature threshold,
The parameter for adjusting light source portion, will be photo-etched the surface temperature control at processing below temperature threshold.
Further, waveguide micro/nano processing system provided by the invention can also have the feature that multiple degrees of freedom works
Platform is six-freedom worktable.
Further, waveguide micro/nano processing system provided by the invention can also have the feature that six degree of freedom works
The surface of platform is equipped with vacuum absorption holes, is used for absorbable substrate.
<scheme two>
In addition, the present invention also provides a kind of waveguide micro-nano processing method, it is micro- using waveguide described in<scheme one>
System of processing of receiving carries out waveguide micro-nano technology to substrate, which comprises the following steps: photolithographic steps: light source portion
Laser beam is provided, is focused the laser beam to by Zoom lens and carries out lithography process in substrate；Blowing and sucking dust remover step: air blowing portion
Blow against the side of machining area, while suction unit is from other side air-breathing, thus collect generated in process it is micro-
Dirt；Whether trace monitor step: having impurity particle object on camera real-time monitoring laser beam scan path, when monitoring on scan path
There are when impurity particle object, control unit adjusts the movement of multi-degree-of-freedom workbench in real time, and adjusts the related ginseng in light source portion in real time
Several and Zoom lens focal lengths, so that laser beam focus is carried out fixed point ablation at impurity particle object；Three-dimensional appearance monitoring
Step: the surface topography of the photoetching slot in three-dimensional appearance instrument real-time monitoring substrate, and by control unit by surface topography and storage
Desired surface topography compares, and adjusts the relevant parameter in light source portion and the focal length of Zoom lens in real time, surface topography is missed
Difference control is in a certain range；Processing temperature monitoring step: the surface temperature being photo-etched in temperature measurer real-time monitoring substrate at processing
Degree, and compared surface temperature and the temperature threshold of setting by control unit, and the case where surface temperature is higher than temperature threshold
Under, the parameter in light source portion is adjusted, the surface temperature control at processing will be photo-etched below temperature threshold.
The action and effect of invention
Using waveguide micro/nano processing system provided by the present invention and processing method, due to using multi-degree-of-freedom workbench
It realizes multifreedom motion, therefore the waveguide of arbitrary graphic pattern can be processed, so that the system of processing has extremely strong manufacture suitable
Ying Xing；Further, convection current of the gas at processing is realized by air blowing portion and suction unit, micronic dust can be siphoned away to greatest extent,
The raw material for avoiding laser from subtracting material improves processing environment in this way and improves processing quality again by laser gain material；
Further, due to the surface topography of the photoetching slot on three-dimensional appearance instrument in process real-time monitoring substrate, and by surface shape
Looks Real-time Feedback compares the desired surface topography of the surface topography received and storage to control unit, control unit, in real time
The relevant parameter in light source portion and the focal length of Zoom lens are adjusted, thus in a certain range by surface topography control errors, because
And substantially increase the precision of processing.To sum up, consistent using this system of processing and the obtained waveguide device waveguide of processing method
Property is good, performance is stable；Whole system equipment is simple, less using ultrafast laser direct etching, process steps, to processing ring
Border requirement is lower, significantly reduces the cost of manufacture of waveguide.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of waveguide micro/nano processing system in the embodiment of the present invention.
Specific embodiment
Waveguide micro/nano processing system of the present invention and processing method are elaborated referring to the drawings.
<embodiment>
As shown in Figure 1, waveguide micro/nano processing system 10 includes light source portion 20, processing department 30, multi-degree-of-freedom workbench 40, light
Learn platform 50, air blowing portion 60, suction unit 70 and control unit 80.
Light source portion 20 include laser, the laser be nanosecond, picosecond and femto-second laser in any one, it is used for
Laser beam is provided.
Processing department 30 is arranged in the optical path in light source portion 20, and lithography process is carried out on substrate B for focusing the laser beam to,
And real-time monitoring is carried out to process.Processing substrate B used can be the materials such as silica, silicon, ceramics.
Multi-degree-of-freedom workbench 40 is used for bearing basement B, and makes substrate B towards processing department, according to preset waveguide patterns
Substrate B is driven to be moved in multiple degrees of freedom, to process designed waveguide patterns.It is more in the present embodiment
Freedom degree workbench 40 is six-freedom worktable 40, for driving substrate B in six-freedom degree direction (i.e., x-axis, y-axis, z
Axis, pitching, rotation and sideway) on moved, i.e., processing department 30 remain static, six-freedom worktable 40 is opposite
The movement in six degree of freedom direction is done in processing department 30.The surface of the six-freedom worktable 40 is equipped with vacuum absorption holes 41, is used for
Substrate B is adsorbed, is firmly fixed it on the surface of six-freedom worktable 40.
Optical platform 50 completely cuts off extraneous vibration for placing six-freedom worktable 40, improves machining accuracy.
The side of six-freedom worktable 40 is arranged in air blowing portion 60, and photoetching machining area is blown on opposite substrate B,
Micronic dust generated in process is blown off substrate B.In the present embodiment, air blowing portion 60 is blowout stream of nitrogen gas.
The other side of six-freedom worktable 40 is arranged in suction unit 70, blows the gas come to air blowing portion 60 and inhales
It removes, to collect the micronic dust carried secretly in gas, guarantees the cleaning of processing environment with this, improve processing quality.In this way,
Micronic dust can be siphoned away to greatest extent, and laser is avoided to subtract the raw material of material again by laser gain material.
In addition, the power of air blowing portion 60 and suction unit 70 can real-time, tunable as needed.
Control unit 80 and light source portion 20, processing department 30, multi-degree-of-freedom workbench 40, optical platform 50, air blowing portion 60, air-breathing
Portion 70 is respectively connected with, and controls their operation.
In the present embodiment, processing department 30 includes Zoom lens, three-dimensional appearance instrument, camera and temperature measurer.
Zoom lens are arranged on the optical path R in light source portion 20, add for focusing the laser beam to progress photoetching on substrate B
Work, and real-time monitoring, focal length real-time, tunable are carried out to process.In the present embodiment, optical path R be can be in the form of optical fiber
It is also possible in the form of spatial light.
The surface topography of the three-dimensional appearance instrument photoetching slot on real-time monitoring substrate B in process, and by surface topography
Real-time Feedback compares the desired surface topography of the surface topography received and storage to control unit 80, by control unit 80,
The relevant parameter of laser and the focal length of Zoom lens in light source portion 20 are adjusted in real time, by surface topography control errors certain
In range.It, can be to pulse frequency, laser power and the pulse duration in laser for control surface topography in the present embodiment
Than etc. parameters be adjusted.
Camera is CCD industrial camera, whether has impurity on real-time monitoring laser beam scan path in process
Grain object, when monitoring on scan path there are when impurity particle object, the fortune of the adjustment six-freedom worktable 40 in real time of control unit 80
It is dynamic, and the relevant parameter of laser and the focal length of Zoom lens are adjusted in real time, thus by laser beam focus in impurity particle object
Place carries out fixed point ablation.It, can be to the laser facula size and laser function in laser for control surface topography in the present embodiment
The parameters such as rate are adjusted.In addition, a large amount of micronic dust may be generated in the ablation process of impurity particle, therefore can be according to need
To increase the power in air blowing portion 60 and suction unit 70 in real time by control unit 80.
Temperature measurer is photo-etched the surface temperature at processing on real-time monitoring substrate B in process, and by surface temperature
Real-time Feedback compares the temperature threshold of the surface temperature received and setting to control unit 80, by control unit 80, and in table
It, can be by reducing the laser power of laser or reducing Zoom lens in the case that face temperature is higher than temperature threshold
Focal length or adjustment six-freedom worktable 40 will be photo-etched at processing to increase the hot spot modes such as at a distance from finished surface
Surface temperature control is in temperature threshold hereinafter, preventing temperature accumulation in laser processing procedure from causing the thermal deformation of substrate B.
It is the specific structure of waveguide micro/nano processing system 10 above, is with processable polymer multimode lightguide array below
Example is illustrated the method for carrying out waveguide micro-nano technology using the waveguide micro/nano processing system 10, the specific steps of this method
It is as follows:
Step 1, the silica substrate B of appropriate size is got out, SU8 glue is coated on substrate B and uses sol evenning machine
The spin coating face of rotation, obtains the glue surface of about 100 μ m thicks；
Step 2, the good silica substrate B of spin coating is put into oven heat, 70 DEG C of heating temperature and heating duration is set
48 hours, obtain the under-clad layer of waveguide；
Step 3, the under-clad layer of the waveguide processed in step 2 is fixed on six degree of freedom work by vacuum absorption holes 41
On platform 40；The use of picosecond laser is light source, 16 groovings in X direction is inscribed out on under-clad layer, for multimode light
Waveguide array, separation are 256 μm, and groove width and groove depth are 65 μm；Detailed process has:
(1) lithography process: importing control unit 80 for designed inscription pattern, and six-freedom worktable 40 is according to being imported
Pattern the movement in six degree of freedom direction is done with respect to processing department 30；Start light source portion 20 and processing department 30 at this time, in light source portion 20
The laser beam that is issued of laser the Zoom lens in processing department 30 are transmitted to by optical path R, focus in substrate 10 just
Designed pattern can be carved；
(2) Blowing and sucking dust remover: air blowing portion 60 is aligned at laser writing and blows out nitrogen gas from the side of six-freedom worktable 40
Stream, suction unit 70 then collect micronic dust generated in process from other side air-breathing；
(3) scan path monitors: the CCD industrial camera real-time monitoring laser scanning during processing in processing department 30
Whether there is impurity particle on path；When monitoring on scan path there are when impurity particle object, the adjustment six in real time of control unit 80 from
By the coke of Zoom lens in the parameter and processing department 30 of laser in the movement of degree workbench 40 and the light source portion 20 of adjusting in real time
Away from laser beam focus carries out fixed point ablation to it at impurity particle object；
(4) three-dimensional appearance monitors: three-dimensional appearance instrument in processing department 30 real-time monitoring institute cutting shape during processing
Surface topography, by the surface topography Real-time Feedback of actual monitoring to control unit 80, by control unit 80 by surface topography and ideal
Surface topography compares, and adjusts the focal length of Zoom lens in the parameter and processing department 30 of laser in light source portion 20 in real time,
In a certain range by surface topography control errors；
(5) processing temperature monitors: temperature measurer in processing department 30 surface at real-time monitoring processing during processing
It is fed back to control unit 80 in real time and compared with set processing temperature threshold value by temperature, if monitoring, certain moment is processed
The surface temperature at place is higher than temperature threshold, then immediately passes through the parameter that control unit 80 adjusts laser in light source portion 20, will process
The surface temperature control at place is below temperature threshold；
Step 4, PDMS performed polymer and corresponding curing agent are mixed according to a certain percentage, mixture is inserted into carved 16
In slot, and the PDMS polymer having more is struck off with scraper；
Step 5, the waveguide under-clad layer that PDMS polymer is inserted in step 4 is placed in oven, is arranged 70 DEG C of heating temperature
And heating duration 24 hours, complete the production of polymer multimode lightguide array sandwich layer；
Step 6, SU8 glue is coated in the waveguide for completing sandwich layer production and revolves spin coating face using sol evenning machine, obtain about 100
The glue surface of μ m thick；It is put into oven, 70 DEG C of heating temperature and heating duration 48 hours are set, the production of waveguide top covering is completed,
Obtain polymer multimode lightguide array.
In addition, for processable polymer monomode optical waveguide array, it is only necessary in above-mentioned steps 3, using femto-second laser
For light source, 16 groovings in X direction are inscribed out on under-clad layer, for monomode optical waveguide array, separation is 256 μ
M, groove width and groove depth are 9 μm；Other steps are as before, which is not described herein again.
Above embodiments are only the illustration done to technical solution of the present invention.Waveguide micro-nano according to the present invention
System of processing and processing method are not merely defined in described content in the embodiment above, but with claim institute
Subject to the range of restriction.Any modify or supplement that those skilled in the art of the invention are done on the basis of the embodiment or
Equivalence replacement, all in claim range claimed of the invention.
Claims (8)
1. a kind of waveguide micro/nano processing system characterized by comprising
Light source portion, provides laser beam；
Processing department, is arranged in the optical path in the light source portion, lithography process is carried out in substrate for focusing the laser beam to, and right
Process carries out real-time monitoring, comprising: Zoom lens, three-dimensional appearance instrument, camera and temperature measurer；
Multi-degree-of-freedom workbench carries the substrate, and makes the substrate towards the processing department, according to preset waveguide patterns
The substrate is driven to be moved in multiple degrees of freedom；
Optical platform for placing the multi-degree-of-freedom workbench, and completely cuts off extraneous vibration；
The side of the multi-degree-of-freedom workbench is arranged in air blowing portion, blows against machining area；
The other side of the multi-degree-of-freedom workbench is arranged in suction unit, blows the gas come to the air blowing portion and absorbs；
Control unit connects and controls the light source portion, the processing department, the multi-degree-of-freedom workbench, the optical platform, institute
The operation in air blowing portion and the suction unit is stated,
Wherein, the surface topography of the three-dimensional appearance instrument photoetching slot in substrate described in real-time monitoring in process, and will
The surface topography Real-time Feedback to control unit,
The control unit compares the desired surface topography of the surface topography received and storage, in real time described in adjusting
The focal length of the relevant parameter in light source portion and the Zoom lens, in a certain range by surface topography control errors,
The camera is CCD industrial camera, whether has impurity on real-time monitoring laser beam scan path in process
Grain object,
When monitoring on scan path there are when the impurity particle object, the control unit adjusts the multiple degrees of freedom work in real time
The movement of platform, and in real time adjust light source portion relevant parameter and the Zoom lens focal length, thus by laser beam focus in
Fixed point ablation is carried out at the impurity particle object.
2. waveguide micro/nano processing system according to claim 1, it is characterised in that:
Wherein, the relevant parameter includes at least: pulse frequency, laser power and pulse duty factor.
3. waveguide micro/nano processing system according to claim 1, it is characterised in that:
Wherein, the light source portion includes laser, the laser be nanosecond, picosecond and femto-second laser in any one.
4. waveguide micro/nano processing system according to claim 1, it is characterised in that:
Wherein, the relevant parameter includes at least: laser facula size and laser power.
5. waveguide micro/nano processing system according to claim 1, it is characterised in that:
Wherein, the temperature measurer is photo-etched the surface temperature at processing in substrate described in real-time monitoring in process, and will
The surface temperature Real-time Feedback gives the control unit,
The control unit compares the temperature threshold of the surface temperature and setting that receive, and high in the surface temperature
In the case where the temperature threshold, the parameter in the light source portion is adjusted, the surface temperature control at processing will be photo-etched in institute
State temperature threshold or less.
6. waveguide micro/nano processing system according to claim 1, it is characterised in that:
Wherein, the multi-degree-of-freedom workbench is six-freedom worktable.
7. waveguide micro/nano processing system according to claim 6, it is characterised in that:
Wherein, the surface of the six-freedom worktable is equipped with vacuum absorption holes, for adsorbing the substrate.
8. a kind of waveguide micro-nano processing method, using waveguide micro/nano processing system pair described in any one of claim 1 to 7
Substrate carries out waveguide micro-nano technology, which comprises the following steps:
Photolithographic steps:
Light source portion provides laser beam, and Zoom lens focus the laser beam to and carry out lithography process in the substrate；
Blowing and sucking dust remover step:
The side of air blowing portion against machining area is blown, while suction unit is from other side air-breathing, to collect process
The micronic dust of middle generation；
Trace monitor step:
Whether there is impurity particle object on camera real-time monitoring laser beam scan path, when monitoring that there are the impurity on scan path
When particulate matter, control unit adjusts the movement of multi-degree-of-freedom workbench in real time, and adjust in real time the light source portion relevant parameter and
The focal length of the Zoom lens, so that laser beam focus is carried out fixed point ablation at the impurity particle object；
Three-dimensional appearance monitoring step:
The surface topography of photoetching slot in substrate described in three-dimensional appearance instrument real-time monitoring, and by the control unit by the surface shape
Looks and the desired surface topography of storage compare, and adjust the relevant parameter and the Zoom lens in the light source portion in real time
Focal length, in a certain range by surface topography control errors；
Processing temperature monitoring step:
The surface temperature being photo-etched in substrate described in temperature measurer real-time monitoring at processing, and by the control unit by the surface temperature
It spends and is compared with the temperature threshold of setting, and in the case where the surface temperature is higher than the temperature threshold, adjust the light
The parameter in source portion will be photo-etched the surface temperature control at processing below the temperature threshold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710305485.9A CN107116308B (en) | 2017-05-03 | 2017-05-03 | Waveguide micro/nano processing system and processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710305485.9A CN107116308B (en) | 2017-05-03 | 2017-05-03 | Waveguide micro/nano processing system and processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107116308A CN107116308A (en) | 2017-09-01 |
| CN107116308B true CN107116308B (en) | 2019-01-04 |
Family
ID=59728056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710305485.9A Active CN107116308B (en) | 2017-05-03 | 2017-05-03 | Waveguide micro/nano processing system and processing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107116308B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108008551A (en) * | 2017-12-15 | 2018-05-08 | 湖北工业大学 | A kind of thermo-optical switch and its manufacture method based on SU8 glue |
| CN108941925A (en) * | 2018-07-27 | 2018-12-07 | 湖北工业大学 | Femtosecond laser processing device and its 1x8 ridge optical splitter of processing |
| CN111250874A (en) * | 2020-02-14 | 2020-06-09 | 南京理工大学 | Method for inducing periodic structure on surface of semiconductor material by multi-pulse picosecond laser |
| CN113523543B (en) * | 2021-07-27 | 2023-04-25 | 北京航空航天大学 | Additive metal implant functional surface laser preparation system based on-line monitoring |
| CN115958331A (en) * | 2021-10-13 | 2023-04-14 | 南通昊海电器有限公司 | Welding method and welding device for composite copper bar conducting layer |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5045668A (en) * | 1990-04-12 | 1991-09-03 | Armco Inc. | Apparatus and method for automatically aligning a welding device for butt welding workpieces |
| CN100462181C (en) * | 2006-10-30 | 2009-02-18 | 西安交通大学 | Femto-second laser ture three-D micro-nano-processing center |
| CN101329508A (en) * | 2008-07-25 | 2008-12-24 | 西安交通大学 | Method for preparing micro-nano stamping stencil by femtosecond laser preparing |
| CN201333592Y (en) * | 2009-01-20 | 2009-10-28 | 陕西午禾科技有限责任公司 | Micro fine processing device for utilizing femtosecond lasers to modify material surface |
| KR101914231B1 (en) * | 2012-05-30 | 2018-11-02 | 삼성디스플레이 주식회사 | Inspection system using scanning electron microscope |
| CN103071926A (en) * | 2012-12-28 | 2013-05-01 | 苏州德龙激光股份有限公司 | Device and method for etching nano-silver conducting material |
| CN103862167A (en) * | 2014-03-18 | 2014-06-18 | 西安交通大学 | Flexible electronic material plate micro-hole high-speed manufacturing device based on ultrafast laser |
| CN206047346U (en) * | 2016-08-31 | 2017-03-29 | 深圳市艾尔摩迪精密科技有限公司 | Based on laser welding weld point temperature real time monitoring apparatus |
-
2017
- 2017-05-03 CN CN201710305485.9A patent/CN107116308B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107116308A (en) | 2017-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107116308B (en) | Waveguide micro/nano processing system and processing method | |
| CN105081586B (en) | A kind of laser processing and device | |
| JP4490883B2 (en) | Laser processing apparatus and laser processing method | |
| US6635849B1 (en) | Laser beam machine for micro-hole machining | |
| CN104339081A (en) | Method and device FOR PERFORMING LASER FILAMENTATION WITHIN TRANSPARENT MATERIALS | |
| CN105301768B (en) | Lens vibrating type laser scanning system | |
| US10016250B2 (en) | Laser patterning apparatus for three-dimensional object | |
| TWI702106B (en) | Method for laser cutting and laser preparation of a coated substrate | |
| CN103551732A (en) | Laser cutting device and cutting method | |
| CN107529467A (en) | Silicon-based MEMS wafer multi-focus laser cutting system and cutting method | |
| CN106624389A (en) | Optical fiber cutting device and method based on ultra-short pulse lasers | |
| US7795560B2 (en) | Apparatus for processing work-piece | |
| CN103495805A (en) | Laser point printing device | |
| CN106773025A (en) | Focusing lens and lens vibrating type laser scanning system | |
| CN104203485B (en) | Ultrafast laser is used to manufacture equipment and the method for micro-breach at the edge line part place of stitch marker | |
| JP2006007619A (en) | Laser machining method and device | |
| JP2010138046A (en) | Method and device for working material to be cut | |
| CN113953273B (en) | Scanning method and device for object to be scanned, storage medium and electronic device | |
| KR100921662B1 (en) | Apparatus and method for cutting substrate using UV laser | |
| CN101804515A (en) | Large-breadth precise laser scribing and dotting equipment | |
| KR100824962B1 (en) | Apparatus and method for cutting substrate using ultrafast frequency laser | |
| CN108941925A (en) | Femtosecond laser processing device and its 1x8 ridge optical splitter of processing | |
| CN201645050U (en) | Equipment for large-width precise laser scribing and dotting | |
| JP2019038737A (en) | Manufacturing method of glass article and manufacturing apparatus of glass article | |
| CN106994562A (en) | The laser cutting method and laser cutting machine of hard brittle material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |