CN107101728A - A kind of double-colored polarized ir detector of non-brake method and its manufacture method - Google Patents
A kind of double-colored polarized ir detector of non-brake method and its manufacture method Download PDFInfo
- Publication number
- CN107101728A CN107101728A CN201710328750.5A CN201710328750A CN107101728A CN 107101728 A CN107101728 A CN 107101728A CN 201710328750 A CN201710328750 A CN 201710328750A CN 107101728 A CN107101728 A CN 107101728A
- Authority
- CN
- China
- Prior art keywords
- layer
- grating
- metal
- detector
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 230000010287 polarization Effects 0.000 claims abstract description 24
- 238000003491 array Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 286
- 229910052751 metal Inorganic materials 0.000 claims description 125
- 239000002184 metal Substances 0.000 claims description 125
- 239000011241 protective layer Substances 0.000 claims description 47
- 239000010408 film Substances 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 26
- 238000001259 photo etching Methods 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 238000005240 physical vapour deposition Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 4
- 238000004380 ashing Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000000994 depressogenic effect Effects 0.000 claims description 3
- 238000005546 reactive sputtering Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 241001465754 Metazoa Species 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 230000009977 dual effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 18
- 238000001514 detection method Methods 0.000 description 9
- 230000009286 beneficial effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101100272279 Beauveria bassiana Beas gene Proteins 0.000 description 1
- 241001212149 Cathetus Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- VMXUWOKSQNHOCA-UKTHLTGXSA-N ranitidine Chemical compound [O-][N+](=O)\C=C(/NC)NCCSCC1=CC=C(CN(C)C)O1 VMXUWOKSQNHOCA-UKTHLTGXSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00611—Processes for the planarisation of structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Geometry (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention relates to a kind of double-colored polarized ir detector of non-brake method, two polarization structures are prepared on non-brake method Two-color Infrared Detectors, the non-brake method Two-color Infrared Detectors are divided into four regions arranged in arrays：First and third region and second, four regions, first and third region and second, four regions form highly different resonators.The invention further relates to prepare the method for above-mentioned detector, it is included in first and third region and the step of second, four regions make the resonator of different height respectively, the step of sputter different sheet resistance value temperature-sensitive layer films respectively and the step of preparing polarization structure respectively in first and third region of the non-brake method Two-color Infrared Detectors and second, four regions, it can work and be worked with superhigh temperature (85 DEG C~100 DEG C) environment under ultralow temperature (80 DEG C~60 DEG C) environment, and possess polarization characteristic.
Description
Technical field
The present invention relates to a kind of double-colored polarized ir detector of non-brake method and its manufacture method, belong to uncooled ir spy
Survey device field.
Background technology
Non-refrigerated infrared detector (uncooled infrared bolometer) in addition to the application in military field,
It is widely used in civil area, such as fire-fighting, automobile auxiliary, forest fire protection, field detection, environmental protection field.
Original non-refrigerating infrared focal plane (Uncooled IRFPA) chip, is single colored chip, there is presently no double-colored
Infrared detector chip is integrated on a single die, main reason is that different infrared band, it is desirable to resonator highly differ
Cause, traditional process and structure can not be integrated；The vanadium oxide film sheet resistance of single colored chip deposition is same numerical value, is led
Its operating temperature range is caused to be limited, the operating temperature range of normal regulating is -40 DEG C~85 DEG C, actually two in high/low temperature
End, image quality produces influence because of vanadium oxide resistance variation, causes the amplification of surface non-uniformities or by the negative of bridge leg resistance
Influence and cause image quality to reduce, and the difficulty of pattern algorithm can be increased.
Non-refrigerated infrared detector, main two wave band windows using infra-red radiation, one is 8~14 microns remote red
Wave section, also referred to as infrared first atmospheric electricity area；Another is 3~5 microns of wave band, referred to as infrared second atmospheric electricity area,
That is middle-infrared band.3-5 micron wave lengths it is infrared belong in it is infrared, advantage is to be more suitable for such as more than 500 degree of measurement high temperature material
Temperature, and this kind of thermal imaging system price is very high；And 8-14 microns of LONG WAVE INFRAREDs are not substantially decayed substantially in an atmosphere, survey
Accuracy of measurement is influenceed very little by distance, and far and near distance measurement is all well suited for, and temperature-measuring range is also relatively wide.
Because infrared system uses the difference in region, the change of climate temperature, the camouflage of target, the release of infrared decoy etc.
Reason, may result in the information decrease that the IRDS of monochrome is obtained.Particularly when the target temperature in motion changes
During change, its infra-red radiation peak wavelength will be moved, and infrared spy device detection accuracy will be caused significantly to decline, or even very may be used
It is able to not can detect.
Non-refrigerated infrared detector is due to the change of ambient climate temperature, at high/low temperature working environment (85 DEG C or -40 DEG C)
Near, processing of circuit signal is influenceed by the resistance non-uniformity or bridge leg resistance of detector, and image quality or performance can be relative
Normal temperature imaging is lowered.In order to ensure near high/low temperature (85 DEG C or -40 DEG C) working environment, remaining to obtain preferable infrared figure
As output, it is to avoid the influence of the resistance non-uniformity or bridge leg resistance of the working environment influence detector of high/low temperature, ad hoc meter is handed over
Two of fork can play the detector of optimum performance, and one is adapted to be operated in -20 DEG C~100 DEG C, and one is adapted to -60 DEG C~60 DEG C
Detector, the two detectors carry out complementation in high/low temperature, and according to ambient temperature, program automatically selects one or two
Individual chip even four chips are operated simultaneously, and optimal graphical quality is exported after receiving infrared signal.
In addition, the detection for not also being combined the double-colored polarized ir detector of non-brake method with Polarization Detection system now；
In existing Polarization Detection system, polarizer independently of outside detector, it is necessary to increase polarizer on the camera lens of complete machine, or
Person carries out the design of polarization camera lens, and the cost of this method is higher, and design difficulty is also than larger；Obtained by rotatable polarization member
Polarization information is taken, the shortcoming of this existing Polarization Detection system is：Optical element is complicated, and light path system is complicated.Pass through
The polarization image that polarizer is gathered with combinations of detectors needs to be handled by Image Fusion, not only complicated but also phase
It is inaccurate.
The content of the invention
The present invention for above-mentioned the deficiencies in the prior art there is provided a kind of operating temperature range it is big, can be different
Infrared band carries out optimal imaging and possesses the double-colored polarized ir detector of non-brake method of polarization characteristic.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：A kind of double-colored polarized ir detector of non-brake method,
First and third region and second, four regions on non-brake method Two-color Infrared Detectors are respectively equipped with polarization structure, the polarization structure
Including grating supporting layer and the metal grating structure being arranged on the grating supporting layer, grating supporting layer is hanging structure.
A kind of beneficial effect of the double-colored polarized ir detector of non-brake method in the present invention：
(1) by the way that polarization structure and non-brake method Two-color Infrared Detectors are carried out into single-chip integration, non-system can not only be realized
The single-chip integration of cold double-colored polarized ir detector, and the difficulty of optical design is greatly reduced, optical system is simplified,
Optical element is reduced, the cost of optical system is reduced.
(2) image gathered by single chip integrated polarization-type non-brake method Two-color Infrared Detectors is believed for original infrared image
Breath, the signal that reading circuit only needs to handle detector detection can be obtained by accurate image information, without being showed
There is the image co-registration of detector, be greatly improved the authenticity and validity of image.
(3) metal grating will not be contacted with thermosensitive film, do not resulted in the deformation of infrared-sensitive micro-bridge structure, do not interfered with
The sensitive characteristic of sensitive thin film.
Further, the non-brake method Two-color Infrared Detectors include one with ASIC (Application Specific
Integrated Circuit:Application specific integrated circuit) substrate and one have microbridge supporting construction detector, the detector
Electrically connected with the ASIC circuit of the Semiconductor substrate, the detector is divided into four regions arranged in arrays, respectively
One region, second area, the 3rd region and the 4th region；
The detector includes the metallic reflector and insulating medium layer on the substrate, if the metallic reflector includes
The metal derby of dry matrix arrangement, the thickness of first and third region insulation dielectric layer is more than second, four-range insulating medium layer,
The first and third region insulation dielectric layer is provided with several metal electrodes, and the metal electrode passes through through described first and third
The connection metal of region insulation dielectric layer is connected with the metallic reflector；
Supporting layer, temperature-sensitive are sequentially provided with the metal electrode in first and third region and second, four-range metal derby
Layer, the first protective layer, the area of the heat-sensitive layer are less than the area of the supporting layer, the heat-sensitive layer in first and third region
Several contact holes are provided with sheet resistance 200K Ω ± 20K Ω higher than the second four-range sheet resistance value, first protective layer, it is described
The lower end of contact hole terminates at the heat-sensitive layer；
Through hole is additionally provided with first protective layer, the through hole passes through first protective layer and the supporting layer,
Terminate at second, four-range metal derby or the metal electrode in the one or three region；
Electrode metal is full of in the through hole and the contact hole, the electrode metal and the first protective layer are provided with second
Protective layer, the heat-sensitive layer is electrically connected with the electrode metal.
Beneficial effect using above-mentioned further technical scheme is：Two-color Infrared Detectors chip, because incorporating ASIC
(Application Specific Integrated Circuit:Application specific integrated circuit) circuit can be to mid-infrared and far-infrared light telecommunications
Number synchronize conversion, it is ensured that the signal of two infrared band windows does not have the time difference, accomplishes synchronism output, is truly realized synchronization
Target is detected, preferable infrared image is obtained, more real object can be detected, it is to avoid infrared camouflage or Infrared jamming.Open up
The application of its infrared detector is opened up, high/low temperature material, aerial target, also simultaneously for detecting ground can be preferably detected simultaneously
Thing itself is radiated, the multi-field application such as night infrared scanning imagery.
In addition, Two-color Infrared Detectors chip, the volume being packaged together and area are integrated more than individually several chips
Small, power consumption is also lower, and circuit part can be integrated shared, and the selection control in region is simply operated to array, can individually or together
When be operated some or several array regions, significantly reduce the power consumption of device.Device encapsulation is reduced simultaneously
Difficulty, reduces the volume and weight of movement, beneficial to portable application and reduces cost.
Can be carried out for different infrared bands (infrared in such as 3~5 microns or 8~14 microns of far infrareds) it is optimal into
Picture, manufactures double-colored chip, and different chips use different vanadium oxide film sheet resistances, have reached the feelings changed in temperature operating conditions
Under condition, the detector for automatically selecting suitable this temperature range work is operated, and the image quality of film is maintained most preferably,
The operating temperature range of device is extended simultaneously, or even less than -40 DEG C, higher than 85 DEG C, preferable image quality can be obtained.
Further, the grating supporting layer includes the first grating supporting layer and is arranged on the first grating supporting layer
Second grating supporting layer, the first grating supporting layer is silicon nitride layer, and the second grating supporting layer is silicon dioxide layer, and
Thickness is 0.10~0.30 μm.
Further, the metal grating structure includes the grating that several are arranged in order, and the grating is linear pattern or curved
It is curved, between the adjacent grating at intervals of 10~500nm.
Using the beneficial effect of above-mentioned further technical scheme：Metal grating structure can strengthen the infrared light of specific band
Absorption, by the width or spacing that adjust adjacent gratings in optical grating construction, thus it is possible to vary enhanced infrared band；Metal light
Grid structure can carry out the interference ripple of different directions screening filtering as polarization structure, only allow target ripple by the structure,
Contrast can thus be strengthened, so as to become apparent from the profile characteristic of target.
Further, the supporting layer is silicon oxide film, and the heat-sensitive layer is vanadium oxide or titanium oxide, first protection
Layer and the second protective layer are silicon nitride film.
Further, the insulating medium layer is silica, and its thickness is
Further, the connection metal is depressed place.
The invention further relates to a kind of manufacture method for manufacturing the above-mentioned double-colored polarized ir detector of non-brake method, including following step
Suddenly：
Step 1. provides the non-brake method Two-color Infrared Detectors for not carrying out sacrifice layer release, in the non-brake method dual-color red
Grating sacrifice layer is deposited on second protective layer of external detector, and processing is patterned to grating sacrifice layer, is graphically being located
Grating supporting layer is deposited on grating sacrifice layer after reason；
Step 2：Metal grating structure is prepared on grating supporting layer；
Step 3：Structure release, release grating sacrifice layer, the first sacrifice layer and the second sacrifice layer form non-brake method double-colored partially
Shake infrared detector.
A kind of beneficial effect for the manufacture method for manufacturing the above-mentioned double-colored polarized ir detector of non-brake method is in the present invention：
(1) the integrated of non-brake method Two-color Infrared Detectors and polarization structure is realized, the polarization of detector is not only improved
Characteristic, reduce light path original paper, increase optical system flexibility, and can effectively save be fabricated separately polarizer into
This；
(2) layer of metal optical grating construction is added on non-brake method Two-color Infrared Detectors, can not only realize that increase is infrared
The effect of absorption, and individually hanging metal grating structure does not result in the deformation of infrared-sensitive micro-bridge structure, does not interfere with
The sensitive characteristic of sensitive thin film；
(3) compared with existing infrared polarization image, the double-colored polarized ir detector acquired image of non-brake method is passed through
Effect has more higher contrast, can highlight the contour feature of target object, the military anti-counterfeit capability of lifting.
Further, the preparation of the double-colored polarized ir detector of the non-brake method for not carrying out sacrifice layer release described in step 1
Method is as follows：
(1) layer of metal reflecting layer is deposited on the substrate comprising ASIC circuit, and the metallic reflector is schemed
Metallic reflector after shapeization processing, graphical treatment includes the metal derby of matrix arrangement；
(2) insulating medium layer is deposited on metallic reflector, and the insulating medium layer is carried out at chemically mechanical polishing
Manage (CMP) processing；
(3) using the method for photoetching and etching, in first and third region, the detector pixel interface electrode of correspondence array
Connecting hole is etched on correspondence position, the deposition connection metal in the connecting hole；
(4) the deposit metal electrodes layer on first and third region insulation dielectric layer, and place is patterned to metal electrode layer
Metal electrode layer after reason, graphical treatment forms the metal electrode of several matrix arrangements, and metal electrode and the company
Metal one-to-one corresponding is connect, the metal electrode is detector pixel interface electrode；
(5) photoetching and etching second area and four-range insulating medium layer, the upper end of etch-stop metallic reflector
Face；
(6) the is sprayed on the metal electrode layer after graphical and second after etching, four-range insulating medium layer
One sacrifice layer, second, the upper surface of the sacrifice layer of four-range first and the dielectric of the process CMP processing in first and third region
The upper surface of layer is concordant；
(7) using the method for photoetching and etching, the first sacrifice layer plasma ashing in first and third region is removed
The first sacrifice layer in first and third region, carries out CMP processing afterwards；
(8) coating second is sacrificed on the insulating medium layer in first and third region and the sacrifice layer of second, four-range first
Layer；
(9) processing is patterned to the second sacrifice layer and the first sacrifice layer, it is graphical afterwards in first area and the 3rd
The first anchor point hole is formed on region, the first anchor point hole terminates at the metal electrode, on second area and the 4th region
The second anchor point hole is formed, the second anchor point hole terminates at the metal derby；
(10) the depositing support layer on the first sacrifice layer and the second sacrifice layer after graphical treatment, the supporting layer is
Silicon nitride film；
(11) using lift-off process (stripping technology), respectively in first and third region and second, four-range branch
Support layer on respectively reactive sputtering heat-sensitive layer, and first and third region temperature-sensitive layer film than second, four-range temperature-sensitive layer film
The high 200K Ω ± 20K Ω of sheet resistance value；
(12) the first protective layer is deposited on heat-sensitive layer and supporting layer.
(13) in the first anchor point hole and the bottom in the second anchor point hole, using the method for photoetching and etching, described the is etched away
One protective layer and supporting layer, respectively terminate in the metal electrode and second, four-range metal derby, form through hole；
(14) on the first protective layer above heat-sensitive layer, using the method for photoetching and etching, first, protection are etched away
Layer, terminates at the heat-sensitive layer, forms contact hole；
(15) the depositing electrode metal in through hole and contact hole, the sheet resistance of the electrode metal is 5~50 Ω；
(16) the second protective layer is deposited on electrode metal layer.
Beneficial effect using above-mentioned further technical scheme is：Detector array functional area is divided, realized
The division of the double-colored polarized ir detector MEMS chip of non-brake method；First and third region forms two different high with second, four regions
The infrared resonance chamber of degree, and top is in same elevation plane, can absorb the infrared band of different wave length；First and thirdth area
Domain is different with the sheet resistance value of second, four-range vanadium oxide film, sheet resistance value it is low can be used for ultralow temperature (- 80 DEG C~-60 DEG C)
Worked under environment, sheet resistance it is high can be used for superhigh temperature (85 DEG C~100 DEG C) environment under work.
In addition, incorporating ASIC circuit, conversion can be synchronized to mid-infrared and far-infrared light electric signal, it is ensured that two infrared bands
The signal of window does not have the time difference, accomplishes synchronism output, is truly realized synchronizing detection target, obtains preferable infrared image, energy
Detect more real object, it is to avoid infrared camouflage or Infrared jamming, expand the application of its infrared detector, can be simultaneously
High/low temperature material is preferably detected, aerial target is also radiated for detecting atural object itself simultaneously, and night infrared scanning imagery etc. is more
The application in field.
Further, in addition to step 19. packaging and testing, detector test encapsulation is manufactured into movement or complete machine, and selection is suitable
Environment temperature, infrared and two detectors of far infrared are operated can allow simultaneously in, or even four detectors work together.
Beneficial effect using above-mentioned further technical scheme is：In infrared or far infrared deterctor simultaneously observe to one
Individual target is observed, and is improved the validity of detection target, resolution ratio and reliability, can be detected more real object, it is to avoid
Infrared camouflage or Infrared jamming.
Further, the insulating medium layer is that the insulating medium layer thickness of deposition in silica, (2) is
Further, in (3), in the connecting hole after deposition connection metal, CMP processing is carried out to the connection metal,
And CMP processing is carried out to second area and four-range insulating medium layer.
Further, the heat-sensitive layer thickness existsBetween.
Further, the thickness of first sacrifice layerThe second sacrifice layer polyimides is thick
Spend and be
Further, the grating supporting layer includes the first grating supporting layer and the second grating supporting layer, first grating
Supporting layer is silicon nitride layer, and the second grating supporting layer is silicon oxide layer, during deposition grating supporting layer, first deposited silicon nitride
Layer, the then silicon oxide layer deposited on silicon nitride layer.
Further, the thickness of first protective layer and second protective layer is
Further, in step 2, when preparing metal grating structure, first with physical vapour deposition (PVD) or sputter at grating support
On layer deposit or sputter layer of metal film, recycle dry etch process etched diffraction grating figure, make the adjacent grating it
Between at intervals of 10~500nm.
Further, in step 2, when preparing metal grating structure, first spin coating photoresist or PI on grating supporting layer, are utilized
Photoetching technique obtains raster graphic on photoresist coating or PI coatings, and then 10~500nm of grating spacings, utilizes physics gas
Deposition or sputtered metal film on the good photoresist of photoetching or PI coatings are mutually deposited or sputtered at, finally, is gone using stripping technology
Peeled off except photoresist or PI coatings, and by unnecessary metallic film, the metallic film is gold, copper, aluminium, titanium, cadmium or chromium, thickness
For 10~500nm.
Brief description of the drawings
Fig. 1 is the division schematic diagram of ASIC circuit array region of the present invention；
Fig. 2 is present invention deposition insulating medium layer schematic diagram；
Fig. 3 carries out the schematic diagram after CMP processing to insulating medium layer for the present invention；
Fig. 4 is metal electrode of the present invention and metallic reflector connection diagram；
Fig. 5 deposits the schematic diagram of the first sacrifice layer for the present invention；
Fig. 6 carries out the schematic diagram after CMP processing to the first sacrifice layer for the present invention；
Fig. 7 is that anchor point hole of the present invention forms schematic diagram；
Fig. 8 is depositing support of the present invention layer schematic diagram；
Fig. 9 deposits the schematic diagram of heat-sensitive layer for the present invention；
Figure 10 deposits the schematic diagram of the first protective layer for the present invention；
Figure 11 is the schematic diagram of etching vias of the present invention；
Figure 12 etches the schematic diagram of contact hole for the present invention；
Figure 13 is the schematic diagram of the second protective layer of depositing electrode metal of the present invention and deposition；
Figure 14 is metal grating structure formation schematic diagram in the present invention；
Figure 15 is panel detector structure schematic diagram of the invention；
Figure 16 is cathetus type metal grating structure schematic diagram of the present invention；
Figure 17 is left-hand flexure type metal grating structure schematic diagram in the present invention；
Figure 18 is dextrad flexure type metal grating structure schematic diagram in the present invention；
In the accompanying drawings, the list of designations represented by each label is as follows：1st, first area, 2, second area, the 3, the 3rd
Region, the 4, the 4th region, 5, the substrate containing ASIC circuit, 6, metallic reflector, 7, insulating medium layer, 8, connection metal, 9,
Metal electrode, the 10, first sacrifice layer, the 11, second sacrifice layer, the 12, first anchor point hole, the 13, second anchor point hole, 14, supporting layer,
15th, first and third region heat-sensitive layer, 16, second, four region heat-sensitive layers, the 17, first protective layer, 18, through hole, 19, contact hole, 20,
Electrode metal, the 21, second protective layer, 22, grating sacrifice layer, the 23, first grating supporting layer, the 24, second grating supporting layer, 25,
Grating.
Embodiment
The principle and feature of a kind of double-colored polarized ir detector of non-brake method in the present invention are retouched below in conjunction with accompanying drawing
State, the given examples are served only to explain the present invention, be not intended to limit the scope of the present invention.
As shown in figure 15, the double-colored polarized ir detector of a kind of non-brake method, including one carry ASIC (Application
Specific Integrated Circuit:Application specific integrated circuit) substrate 5 and one have microbridge supporting construction detector,
The detector is electrically connected with the ASIC circuit of the Semiconductor substrate 5, and the detector is divided into four areas arranged in arrays
Domain, respectively first area 1, second area 2, the 3rd region 3 and the 4th region 4；
The detector includes the metallic reflector 6 and insulating medium layer 7 on the substrate, and the metallic reflector 6 is wrapped
The metal derby of several matrix arrangements is included, the thickness of insulating medium layer 7 in first and third region is more than the insulation of second, four-range and is situated between
Matter layer 7, the insulating medium layer 7 in first and third region is provided with several metal electrodes 9, the metal electrode 9 by through
The connection metal 8 of one or the three region insulation dielectric layer is connected with the metallic reflector 6, and the connection metal 8 is depressed place；
Supporting layer 14, heat are sequentially provided with the metal electrode 9 and second in first and third region, four-range metal derby
Photosensitive layer, the first protective layer 17, the area of the heat-sensitive layer are less than the area of the supporting layer 14, the one or the three region heat-sensitive layer
15 sheet resistance than the two or four region heat-sensitive layer 16 the high 200K Ω ± 20K Ω of sheet resistance value, if being provided with first protective layer 17
Dry contact hole 19, the lower end of the contact hole 19 terminates at the heat-sensitive layer；
Through hole 18 is additionally provided with first protective layer 17, the through hole 18 passes through first protective layer 17 and described
Supporting layer 14, terminates at the metal derby or metal electrode 9；
Electrode metal 20, the protective layer 17 of electrode metal 20 and first are full of in the through hole 18 and the contact hole 19
The second protective layer 21 is provided with, polarization structure is respectively equipped with first and third region and second, four-range protective layer, it is described
Polarization structure includes grating supporting layer and the metal grating structure being arranged on the grating supporting layer.
The grating supporting layer includes the first grating supporting layer 23 and be arranged on the first grating supporting layer 23 the
Two grating supporting layers 24, the first grating supporting layer 23 is silicon nitride layer, and the second grating supporting layer 24 is silica
Layer, and thickness is 0.10~0.30 μm of
The metal grating structure includes the grating 25 that several are arranged in order, and the grating 25 is linear pattern or bending
Between type, the adjacent grating 25 at intervals of 10~500nm, as shown in figs. 16-17.
The supporting layer 14 is silicon oxide film, and the heat-sensitive layer is vanadium oxide or titanium oxide, first protective layer 17
It is silicon nitride film with the second protective layer 21.
The invention further relates to the manufacture method of the double-colored polarized ir detector of above-mentioned non-brake method, below in conjunction with the accompanying drawings to this hair
Bright principle and feature is described, and the given examples are served only to explain the present invention, is not intended to limit the scope of the present invention.
Embodiment one
A kind of manufacture method of the double-colored polarized ir detector of non-brake method, prepares one and does not carry out the non-of sacrifice layer release first
Freeze Two-color Infrared Detectors, comprises the following steps：
(1) layer of metal reflecting layer 6 is deposited on the substrate comprising ASIC circuit, and the metallic reflector 6 is carried out
Metallic reflector 6 after graphical treatment, graphical treatment includes the metal derby of matrix arrangement；
(2) deposits insulating medium layer 7 on metallic reflector 6, and the insulating medium layer 7 is silica, the insulation
The thickness of dielectric layer 7 isAs shown in Fig. 2 and to the insulating medium layer 7 carry out CMP processing, remove thickness beAs shown in Figure 3；
(3) using the method for photoetching and etching, in first and third region, the detector pixel interface electrode of correspondence array
Connecting hole is etched on correspondence position, the deposition connection metal 8 in the connecting hole；Second, four-range insulating medium layer 7 is entered
Row CMP processing, removing the second, thickness of four-range insulating medium layer 7 isTo the connection metal in first and third region
CMP processing is carried out, and removes thickness and isFirst and third region insulation dielectric layer 7；
(4) deposit metal electrodes layers on first and third region insulation dielectric layer 7, and being patterned to metal electrode layer
Metal electrode layer after processing, graphical treatment forms the metal electrode 9 of several matrix arrangements, and metal electrode 9 and institute
State connection metal 8 to correspond, the metal electrode 9 is detector pixel interface electrode；
(5) photoetching and etching second, four-range insulating medium layer 7, until exposing metallic reflector 6, as shown in Figure 4；
(6) metal electrode layer after graphical and second area and four-range insulating medium layer 7 after etching
The first sacrifice layer 10 of upper spraying, first sacrifice layer 10 is polyimides, and the thickness of first sacrifice layer 10 isAs shown in Figure 5；
(7) using the method for photoetching and etching, by the plasma of the first sacrifice layer 10 in first area and the 3rd region
Ashing, carries out CMP processing, as shown in Figure 6 afterwards；
(8) the second sacrifice layer 11 is coated on the first sacrifice layer 10 after plasma ashing, second sacrifice layer 11 is
Polyimides, its thickness is
(9) processing is patterned to the second sacrifice layer 11 and the first sacrifice layer 10, it is graphical after in first area and
The first anchor point hole 12 is formed on 3rd region, the hole of the first anchor point 12 terminates at the metal electrode 9, in second area and
The second anchor point hole 13 is formed on four regions, the second anchor point hole 13 terminates at the metal derby, as shown in Figure 7；
(10) depositing support layer 14, the branch on the first sacrifice layer 10 and the second sacrifice layer 11 after graphical treatment
Support layer 14 is silicon nitride film, as shown in Figure 8；
(11) using lift-off process (stripping technology), respectively in first and third region and second, four-range branch
Reactive sputtering temperature-sensitive layer film on layer 14 is supportted, the heat-sensitive layer thickness existsBetween, the temperature-sensitive in first and third region
15 film of layer are than the high 200K Ω ± 20K Ω of sheet resistance value of second, the film of four-range heat-sensitive layer 16, and different sheet resistance values can use
Worked in ultralow temperature or superhigh temperature；, as shown in Figure 9
(12) layer protective layer 17 is deposited on heat-sensitive layer and supporting layer 14, the thickness of first protective layer 17 isAs shown in Figure 10.
(13) in the first anchor point hole 12 and the bottom in the second anchor point hole 13, using the method for photoetching and etching, institute is etched away
The first protective layer 17 and supporting layer 14 are stated, the metal electrode 9 and second, four-range metal derby is respectively terminated in, forms logical
Hole 18, as shown in figure 11；
(14) on the first protective layer 17 above heat-sensitive layer, using the method for photoetching and etching, the first protection is etched away
Layer 17, terminates at the heat-sensitive layer, forms contact hole 19, as shown in figure 12；
(15) the depositing electrode metal 20 in through hole 18 and contact hole 19, the sheet resistance of the electrode metal 20 is 5~50 Ω；
(16) the second protective layer 21 is deposited on electrode metal layer, the thickness of second protective layer 21 isAs shown in figure 13；
(17) grating sacrifice layer is deposited on the second protective layer, and processing is patterned to grating sacrifice layer, in figure
Change and be sequentially depositing the first grating supporting layer and the second grating supporting layer, the first grating branch on the grating sacrifice layer after processing
Support layer is silicon nitride layer, and the second grating supporting layer is silicon oxide layer, and is patterned processing to the grating supporting layer；
(18) prepare metal grating structure on grating supporting layer, first with physical vapour deposition (PVD) or sputter at grating support
On layer deposit or sputter layer of metal film, recycle dry etch process etched diffraction grating figure, make the adjacent grating it
Between at intervals of 10~500nm, as shown in figure 14；
(19) structure release, scribing release is carried out to detector, and the first sacrifice layer 10, the second sacrifice layer 11 and grating is sacrificial
Domestic animal layer release is clean, forms height respectively in first and third region and second, four regions and isIt is with heightResonator, and top is all in all one elevation plane, first and thirdth area on the second protective layer
Domain and second, four regions form hanging polarization structure respectively, as shown in figure 15.
(20) packaging and testing, detector test encapsulation is manufactured into movement or complete machine, selects suitable environment temperature, can be simultaneously
Infrared and two detectors of far infrared are operated in allowing, or even four detectors work together.
Embodiment two
From unlike embodiment one, in step (19), when preparing metal grating structure on grating supporting layer, first in light
Spin coating photoresist or PI on grid supporting layer, raster graphic, grating are obtained using photoetching technique on photoresist coating or PI coatings
Be spaced 10~500nm, then, using physical vapour deposition (PVD) or sputter on the good photoresist of photoetching or PI coatings deposit or sputter
Metallic film, finally, removes photoresist or PI coatings, and unnecessary metallic film is peeled off, the metal using stripping technology
Film is gold, copper, aluminium, titanium, cadmium or chromium, and thickness is 10~500nm.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (11)
1. a kind of double-colored polarized ir detector of non-brake method, it is characterised in that on non-brake method Two-color Infrared Detectors first,
Three regions and second, four regions are respectively equipped with polarization structure, and the polarization structure includes grating supporting layer and is arranged on the light
Metal grating structure on grid supporting layer.
2. the double-colored polarized ir detector of non-brake method according to claim 1, it is characterised in that the non-brake method dual-color red
External detector includes the substrate with ASIC circuit and the detector with microbridge supporting construction, and the detector is partly led with described
The ASIC circuit electrical connection of body substrate, the detector is divided into four regions arranged in arrays, respectively first area, second
Region, the 3rd region and the 4th region；
The detector includes the metallic reflector and insulating medium layer on the substrate, and the metallic reflector includes several
The metal derby of matrix arrangement, the thickness of first and third region insulation dielectric layer is more than second, four-range insulating medium layer, described
First and third region insulation dielectric layer is provided with several metal electrodes, and the metal electrode passes through through first and third region
The connection metal of insulating medium layer is connected with the metallic reflector；
Supporting layer, heat-sensitive layer, are sequentially provided with the metal electrode in first and third region and second, four-range metal derby
One protective layer, the area of the heat-sensitive layer is less than the area of the supporting layer, the sheet resistance ratio of the heat-sensitive layer in first and third region
Secondth, several contact holes, the contact are provided with the high 200K Ω ± 20K Ω of four-range sheet resistance value, first protective layer
The lower end in hole terminates at the heat-sensitive layer；
Through hole is additionally provided with first protective layer, the through hole passes through first protective layer and the supporting layer, terminates
Metal electrode in second, four-range metal derby or the one or three region；
Electrode metal is full of in the through hole and the contact hole, the electrode metal and the first protective layer are provided with the second protection
Layer, the heat-sensitive layer is electrically connected with the electrode metal.
3. a kind of double-colored polarized ir detector of non-brake method according to claim 1 or 2, it is characterised in that the grating
Supporting layer includes the first grating supporting layer and the second grating supporting layer being arranged on the first grating supporting layer, described first
Grating supporting layer is silicon nitride layer, and the second grating supporting layer is silicon dioxide layer, and thickness is 0.10~0.30 μm.
4. a kind of double-colored polarized ir detector of non-brake method according to claim 1 or 2, it is characterised in that the metal
Optical grating construction includes the grating that several are arranged in order, and the grating is between linear pattern or flexure type, the adjacent grating
At intervals of 10~500nm.
5. the double-colored polarized ir detector of a kind of non-brake method according to claim 1, it is characterised in that the supporting layer is nitridation
Silicon thin film, the heat-sensitive layer is vanadium oxide or titanium oxide, and first protective layer and the second protective layer are silicon nitride film, described
Heat-sensitive layer thickness existsBetween, the insulating medium layer is silica, and its thickness is
The connection metal is depressed place.
6. a kind of manufacture method of the double-colored polarized ir detector of non-brake method, it is characterised in that comprise the following steps：
Step 1. provides the non-brake method Two-color Infrared Detectors for not carrying out sacrifice layer release, is visited in the non-brake method Dual band IR
Survey and grating sacrifice layer is deposited on the second protective layer of device, and processing is patterned to grating sacrifice layer, in graphical treatment
Grating supporting layer is deposited on grating sacrifice layer afterwards；
Step 2：Metal grating structure is prepared on grating supporting layer；
Step 3：Structure release, release grating sacrifice layer, the first sacrifice layer and the second sacrifice layer form the double-colored polarization of non-brake method red
External detector.
7. a kind of manufacture method of the double-colored polarized ir detector of non-brake method according to claim 7, it is characterised in that step
The preparation method of the double-colored polarized ir detector of the non-brake method for not carrying out sacrifice layer release described in rapid 1 is as follows：
(1) layer of metal reflecting layer is deposited on the substrate comprising ASIC circuit, and the metallic reflector is patterned
Metallic reflector after processing, graphical treatment includes the metal derby of matrix arrangement；
(2) insulating medium layer is deposited on metallic reflector, and chemical mechanical polish process is carried out to the insulating medium layer
(CMP) handle；
(3) using the method for photoetching and etching, in first and third region, the correspondence of the detector pixel interface electrode of correspondence array
Connecting hole is etched on position, the deposition connection metal in the connecting hole；
(4) the deposit metal electrodes layer on first and third region insulation dielectric layer, and be patterned processing to metal electrode layer,
Metal electrode layer after graphical treatment forms the metal electrode of several matrix arrangements, and metal electrode and the connection gold
Category is corresponded, and the metal electrode is detector pixel interface electrode；
(5) photoetching and etching second area and four-range insulating medium layer, the upper surface of etch-stop metallic reflector；
(6) spraying first is sacrificial on the metal electrode layer after graphical and second after etching, four-range insulating medium layer
Domestic animal layer, second, the upper surface of the sacrifice layer of four-range first and the insulating medium layer of the process CMP processing in first and third region
Upper surface is concordant；
(7) using the method for photoetching and etching, by the first sacrifice layer plasma ashing in first and third region, remove first,
The first sacrifice layer in three regions, carries out CMP processing afterwards；
(8) the second sacrifice layer is coated on the insulating medium layer in first and third region and the sacrifice layer of second, four-range first；
(9) processing is patterned to the second sacrifice layer and the first sacrifice layer, it is graphical afterwards in first area and the 3rd region
The first anchor point hole of upper formation, the first anchor point hole terminates at the metal electrode, is formed on second area and the 4th region
Second anchor point hole, the second anchor point hole terminates at the metal derby；
(10) the depositing support layer on the first sacrifice layer and the second sacrifice layer after graphical treatment, the supporting layer is nitridation
Silicon thin film；
(11) using lift-off process (stripping technology), respectively in first and third region and second, four-range supporting layer
It is upper respectively reactive sputtering heat-sensitive layer, and first and third region temperature-sensitive layer film than the second, sheet resistance of four-range temperature-sensitive layer film
It is worth high 200K Ω ± 20K Ω；
(12) the first protective layer is deposited on heat-sensitive layer and supporting layer.
(13) in the first anchor point hole and the bottom in the second anchor point hole, using the method for photoetching and etching, etch away described first and protect
Sheath and supporting layer, respectively terminate in the metal electrode and second, four-range metal derby, form through hole；
(14) on the first protective layer above heat-sensitive layer, using the method for photoetching and etching, first is etched away, protective layer is whole
The heat-sensitive layer is terminated in, contact hole is formed；
(15) the depositing electrode metal in through hole and contact hole, the sheet resistance of the electrode metal is 5~50 Ω；
(16) the second protective layer is deposited on electrode metal layer.
8. the manufacture method of the double-colored polarized ir detector of a kind of non-brake method according to claim 7, it is characterised in that described
The thickness of first sacrifice layerThe second sacrifice layer polyimides, thickness is
9. a kind of manufacture method of the double-colored polarized ir detector of non-brake method according to claim 7, it is characterised in that institute
Stating grating supporting layer includes the first grating supporting layer and the second grating supporting layer, and the first grating supporting layer is silicon nitride layer,
The second grating supporting layer is silicon oxide layer, during deposition grating supporting layer, first deposited silicon nitride layer, then on silicon nitride layer
Silicon oxide layer deposited.
10. a kind of manufacture method of the double-colored polarized ir detector of non-brake method according to claim 7, it is characterised in that
In step 2, when preparing metal grating structure, first with physical vapour deposition (PVD) or sputter on grating supporting layer deposit or sputter
Layer of metal film, recycles dry etch process etched diffraction grating figure, make between the adjacent grating at intervals of 10~
500nm。
11. a kind of manufacture method of the double-colored polarized ir detector of non-brake method according to claim 7, it is characterised in that
In step 2, when preparing metal grating structure, first spin coating photoresist or PI on grating supporting layer, using photoetching technique in photoetching
Obtain raster graphic on gel coating or PI coatings, then 10~500nm of grating spacings, using physical vapour deposition (PVD) or sputters at
Deposition or sputtered metal film on the good photoresist of photoetching or PI coatings, finally, remove photoresist using stripping technology or PI are applied
Layer, and unnecessary metallic film is peeled off, the metallic film is gold, copper, aluminium, titanium, cadmium or chromium, and thickness is 10~500nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710328750.5A CN107101728B (en) | 2017-05-11 | 2017-05-11 | A kind of double-colored polarized ir detector of non-brake method and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710328750.5A CN107101728B (en) | 2017-05-11 | 2017-05-11 | A kind of double-colored polarized ir detector of non-brake method and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107101728A true CN107101728A (en) | 2017-08-29 |
| CN107101728B CN107101728B (en) | 2019-06-21 |
Family
ID=59669717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710328750.5A Active CN107101728B (en) | 2017-05-11 | 2017-05-11 | A kind of double-colored polarized ir detector of non-brake method and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107101728B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109813448A (en) * | 2019-01-31 | 2019-05-28 | 中国科学院长春光学精密机械与物理研究所 | The super surface of bispectrum integrates non-refrigerated infrared detector and production method |
| CN111896122A (en) * | 2020-08-11 | 2020-11-06 | 烟台睿创微纳技术股份有限公司 | Polarization non-refrigeration infrared detector and preparation method thereof |
| CN111896120A (en) * | 2020-08-11 | 2020-11-06 | 烟台睿创微纳技术股份有限公司 | Double-color polarization non-refrigeration infrared detector and manufacturing method thereof |
| CN111947789A (en) * | 2020-08-11 | 2020-11-17 | 烟台睿创微纳技术股份有限公司 | Double-color polarization non-refrigeration infrared detector and manufacturing method thereof |
| CN113380916A (en) * | 2021-04-23 | 2021-09-10 | 武汉高芯科技有限公司 | Dual-mode uncooled infrared detector thermosensitive layer structure and preparation method thereof |
| CN113447142A (en) * | 2021-06-25 | 2021-09-28 | 北京北方高业科技有限公司 | Reinforced CMOS infrared detector |
| CN113594193A (en) * | 2021-09-30 | 2021-11-02 | 西安中科立德红外科技有限公司 | Hybrid imaging detector chip based on semiconductor integrated circuit and preparation method |
| CN113921667A (en) * | 2021-12-06 | 2022-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Mid-infrared light-emitting device, preparation method, light-emitting assembly and light-emitting equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495829B1 (en) * | 1999-01-12 | 2002-12-17 | Nec Corporation | Thermal infrared array sensor for detecting a plurality of infrared wavelength bands |
| US20110266443A1 (en) * | 2010-04-28 | 2011-11-03 | Schimert Thomas R | Pixel-level optical elements for uncooled infrared detector devices |
| CN106098846A (en) * | 2016-06-29 | 2016-11-09 | 烟台睿创微纳技术股份有限公司 | A kind of for non-refrigerated infrared detector reference pixel and manufacture method thereof |
-
2017
- 2017-05-11 CN CN201710328750.5A patent/CN107101728B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495829B1 (en) * | 1999-01-12 | 2002-12-17 | Nec Corporation | Thermal infrared array sensor for detecting a plurality of infrared wavelength bands |
| US20110266443A1 (en) * | 2010-04-28 | 2011-11-03 | Schimert Thomas R | Pixel-level optical elements for uncooled infrared detector devices |
| CN106098846A (en) * | 2016-06-29 | 2016-11-09 | 烟台睿创微纳技术股份有限公司 | A kind of for non-refrigerated infrared detector reference pixel and manufacture method thereof |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109813448A (en) * | 2019-01-31 | 2019-05-28 | 中国科学院长春光学精密机械与物理研究所 | The super surface of bispectrum integrates non-refrigerated infrared detector and production method |
| CN111896122A (en) * | 2020-08-11 | 2020-11-06 | 烟台睿创微纳技术股份有限公司 | Polarization non-refrigeration infrared detector and preparation method thereof |
| CN111896120A (en) * | 2020-08-11 | 2020-11-06 | 烟台睿创微纳技术股份有限公司 | Double-color polarization non-refrigeration infrared detector and manufacturing method thereof |
| CN111947789A (en) * | 2020-08-11 | 2020-11-17 | 烟台睿创微纳技术股份有限公司 | Double-color polarization non-refrigeration infrared detector and manufacturing method thereof |
| CN111947789B (en) * | 2020-08-11 | 2021-12-21 | 烟台睿创微纳技术股份有限公司 | Double-color polarization non-refrigeration infrared detector and manufacturing method thereof |
| CN111896120B (en) * | 2020-08-11 | 2022-03-22 | 烟台睿创微纳技术股份有限公司 | Double-color polarization non-refrigeration infrared detector and manufacturing method thereof |
| CN113380916A (en) * | 2021-04-23 | 2021-09-10 | 武汉高芯科技有限公司 | Dual-mode uncooled infrared detector thermosensitive layer structure and preparation method thereof |
| CN113447142A (en) * | 2021-06-25 | 2021-09-28 | 北京北方高业科技有限公司 | Reinforced CMOS infrared detector |
| CN113594193A (en) * | 2021-09-30 | 2021-11-02 | 西安中科立德红外科技有限公司 | Hybrid imaging detector chip based on semiconductor integrated circuit and preparation method |
| CN113594193B (en) * | 2021-09-30 | 2022-01-25 | 西安中科立德红外科技有限公司 | Hybrid imaging detector chip based on semiconductor integrated circuit and preparation method |
| CN113921667A (en) * | 2021-12-06 | 2022-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Mid-infrared light-emitting device, preparation method, light-emitting assembly and light-emitting equipment |
| CN113921667B (en) * | 2021-12-06 | 2022-03-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Mid-infrared light-emitting device, preparation method thereof, light-emitting assembly and light-emitting equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107101728B (en) | 2019-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107101728B (en) | A kind of double-colored polarized ir detector of non-brake method and its manufacturing method | |
| US6307194B1 (en) | Pixel structure having a bolometer with spaced apart absorber and transducer layers and an associated fabrication method | |
| US7268349B2 (en) | Infrared absorption layer structure and its formation method, and an uncooled infrared detector using this structure | |
| US7968846B2 (en) | Tunable finesse infrared cavity thermal detectors | |
| CN103715307A (en) | Non-refrigeration infrared detector and preparation method thereof | |
| US6891161B2 (en) | Pixel structure and an associated method of fabricating the same | |
| US20020058352A1 (en) | Monolithic lead-salt infrared radiation detectors and methods of formation | |
| CN110118605A (en) | A kind of mode of resonance wide spectrum non-refrigerated infrared detector and preparation method thereof | |
| US20080237467A1 (en) | Bolometer-type thz-wave detector | |
| EP1738413A2 (en) | Multi-spectral uncooled microbolometer detectors | |
| CN107117578B (en) | A kind of non-brake method Two-color Infrared Detectors MEMS chip and its manufacturing method | |
| CN106052883B (en) | Three layers of micro-bridge structure, three layers of uncooled microbolometer and preparation method thereof | |
| CN107150995B (en) | A kind of polarization sensitive non-refrigerated infrared detector and preparation method thereof | |
| US20110057107A1 (en) | Bolometric detector for detecting electromagnetic waves | |
| JP2003532067A (en) | Microbolometer and method for forming the same | |
| US6426539B1 (en) | Bolometric detector with intermediate electrical insulation and manufacturing process for this detector | |
| CN107117579A (en) | A kind of double-deck polarization non-refrigerated infrared detector structure and preparation method thereof | |
| CN106784165B (en) | A kind of novel double-layer non-refrigerated infrared focal plane probe dot structure and preparation method thereof | |
| US10101212B1 (en) | Wavelength-selective thermal detection apparatus and methods | |
| CN204271111U (en) | Thermopile IR detector | |
| CN110118604B (en) | Wide-spectrum microbolometer based on mixed resonance mode and preparation method thereof | |
| WO2002040954A1 (en) | Reference bolometer and associated fabrication methods | |
| EP2764337A1 (en) | Microbolometer detector layer | |
| CN211920871U (en) | Infrared sensor | |
| CN107128872B (en) | A kind of novel polarization non-refrigerated infrared focal plane probe and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: The invention relates to an uncooled two-color polarization infrared detector and a manufacturing method thereof Effective date of registration: 20211228 Granted publication date: 20190621 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230106 Granted publication date: 20190621 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: An uncooled dual-color polarized infrared detector and its manufacturing method Effective date of registration: 20230113 Granted publication date: 20190621 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20190621 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |