CN107091730B - Device for estimating absolute light response rate of photomultiplier - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 95
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 95
- 239000010703 silicon Substances 0.000 claims abstract description 95
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- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
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Abstract
The invention relates to the field of optical measurement, in particular to a device for estimating absolute light response rate of a photomultiplier, which comprises a laser, an attenuator I, a camera bellows, a beam splitter I, an attenuator II, a plane mirror I, a shutter II, a plane mirror II, a beam splitter II, a cassette, a silicon photodiode and the photomultiplier to be measured, wherein the beam splitter I, the attenuator II, the plane mirror I, the shutter II, the plane mirror II, the beam splitter II, the cassette, the silicon photodiode and the photomultiplier to be measured are all positioned in the camera bellows, the silicon photodiode and the photomultiplier to be measured are positioned in the cassette, a light path I is formed by the laser, the attenuator I, the beam splitter I, the shutter I, the plane mirror II, the beam splitter II and the silicon photodiode in sequence, and a light path II is formed by the laser, the attenuator I, the beam splitter II, the plane mirror I, the shutter II, the beam splitter II and the silicon photodiode in sequence, and the optical axis of a measuring system has a certain angle.
Description
Technical Field
The invention relates to the field of optical measurement, in particular to a device for estimating the absolute light response rate of a photomultiplier by utilizing nonlinear correction.
Background
The measurement of extremely low power light plays an important role in scientific research and industrial application, such as astronomical observation, nuclear radiation detection, bioluminescence detection, spectroscopy measurement and the like, and photomultiplier tubes are used in a photoelectric detector to measure low power light in a visible light region; the most commonly used method for accurately measuring absolute light response rate is to compare the measurement result of the detector to be measured with the data of a calibrated reference light source or photodetector. The prior art has the defect that the absolute light response rate estimation and the linearity measurement are carried out separately, and the light response rate of a photomultiplier tube in a wide power range is not sufficiently estimated by virtue of the experimental results only for a certain spectral range or a certain narrow light power range, and the device for estimating the absolute light response rate of the photomultiplier tube can solve the problem.
The responsivity of a photodiode, which is typically a function of the wavelength of the input radiation, is the ratio of its output current signal to the input radiation; a photodiode is said to be linear if its responsivity does not vary with the amount of input radiation, linearity being one of the fundamental requirements for precision measurement of optical radiation, especially in the fields of photometry and radiometry, in which the superposition method is a fundamental method, as known from the literature [ Sanders, c.l.j.res.Natl bur.stand.a 1972, 76, 437 ] and the literature [ Sanders, c.l.appl.opt.1962,1, 207 ], the principle of the superposition method for measuring nonlinearity is that the light response generated by two light sources in the photodiode to be measured, respectively, is N 1 And N 2 The sum of the light of the two light sources produces a light response in the photodiode to be measured of N 12 If N 1 +N 2 ＝N 12 The photodiode under test can be considered linear if N 1 +N 2 ≠N 12 Then the nonlinearity can be defined by N 12 /(N 1 +N 2 ) Given. Two different light sources or one light source and two different diaphragms may be used in the above method.
Disclosure of Invention
In order to solve the problems, the invention utilizes nonlinear correction to estimate the absolute optical response rate of the photomultiplier, and the absolute optical response rate is estimated by comparing the absolute optical response rate with the result obtained by the calibrated optical attenuator, so that the power range in the visible light range is wide, and the lowest optical power can be close to the single photon level.
The invention provides a device for estimating the light response rate of a photomultiplier under the irradiation of visible light with single photon level light power, which is based on three factors: the spectral response rate of the calibrated silicon photodiode; the response rate of the calibrated silicon photodiode is converted into a photomultiplier; nonlinear correction of silicon photodiodes and photomultiplier tubes.
The technical scheme adopted by the invention is as follows:
the device for estimating the absolute light response rate of the photomultiplier comprises a laser, an attenuator I, a camera bellows, a beam splitter I, an attenuator II, a plane mirror I, a shutter II, a plane mirror II, a beam splitter II, a cassette, a silicon photodiode and a photomultiplier to be measured, wherein the beam splitter I, the attenuator II, the plane mirror I, the shutter II, the plane mirror II, the beam splitter II, the cassette, the silicon photodiode and the photomultiplier to be measured are all positioned in the camera bellows, the silicon photodiode and the photomultiplier to be measured are positioned in the cassette, the laser emits laser to the beam splitter I through the attenuator I, an optical path I is sequentially formed by the laser, the attenuator I, the beam splitter I, the shutter I, the plane mirror II, the beam splitter II and the silicon photodiode, the optical path II is sequentially formed by the laser, the attenuator I, the attenuator II, the plane mirror I, the shutter II, the beam splitter II and the silicon photodiode, the optical path II, the parameters of the attenuator I and the attenuator II are adjusted to measure different light power conditions, and the linear parameters of the laser and the photomultiplier can be shared by the laser, and the laser has the power parameters of the laser and the photodiode under the conditions that the power parameters are shared by the laser and the laser power parameters and the laser power can be shared by the 10 -6 W to 10 -16 W, the attenuator I, the attenuator II and the optical axis of the measuring system are inclined at a certain angle to avoid interference, and the silicon photodiode is arranged at the incident light power 10 -6 The response under W is known. The linear measurements of the photomultiplier to be measured and the silicon photodiode are carried out at incident light wavelengths of 433 nm, 532 nm, 694 nm, respectively.
The device for estimating the absolute light response rate of the photomultiplier comprises the following estimation steps:
the silicon photodiode is used as a reference for calibrating the absolute optical power of the photomultiplier to be measured, at an incident optical power of 10 -6 W to 10 -11 And under the condition of W range, calibrating the nonlinearity of the silicon photodiode, wherein the method sequentially comprises the following steps: the two light beams are collimated by adjusting the plane mirror I, the plane mirror II and the beam splitter II and overlapped at the same point of the center of the optical sensor, in the initial state, the shutter I and the shutter II are both closed, then the shutter I is opened, and the output of the silicon photodiode is measuredSignal I A Then the shutter II is opened to measure the output signal I of the silicon photodiode A+B Then the shutter I is closed, and the output signal I of the silicon photodiode is measured B Then the shutter I is opened, and the output signal I 'of the silicon photodiode is measured' B+A Then the shutter II is closed, and the output signal I 'of the silicon photodiode is measured' A The linearity is obtained byWherein->The linearity under different light power conditions is measured by adjusting the parameters of the attenuator I and the attenuator II, n groups of attenuator parameters are provided, so that the light power incident on the silicon photodiode can be measured at the power level of 10 -6 W to 10 -16 W varies within a range, k represents a set of conditions in the n groups, the method for calculating linearity can eliminate laser drift effect generated by an attenuator in a linearity measurement experiment, and finally, the linearity under each light power condition is multiplied to obtain the silicon photodiode output signal I A+B (k) Is of non-linearity of (2)
Second, at an incident light power of 10 -6 W to 10 -11 And calibrating the nonlinearity of the photomultiplier to be measured under the condition of W range, wherein the method sequentially comprises the following steps: removing the silicon photodiode, placing the photomultiplier to be tested at the position of the original silicon photodiode, collimating two beams of light by adjusting a plane mirror I, a plane mirror II and a beam splitter II and overlapping at the same point of the center of the optical sensor, closing both the shutter I and the shutter II in an initial state, opening the shutter I, and measuring an output signal I of the photomultiplier to be tested at the moment C Then the shutter II is opened to measure the output signal I of the photomultiplier to be measured C+D Then the shutter I is closed to measure the output signal I of the photomultiplier to be measured D And thenThe shutter I is opened to measure the output signal I 'of the photomultiplier to be measured' D+C Then the shutter II is closed to measure the output signal I 'of the photomultiplier to be measured' C The linearity is obtained byWherein->The linearity under different light power conditions is measured by adjusting the parameters of the attenuator I and the attenuator II, n groups of attenuator parameters are provided, so that the light power incident on the silicon photodiode can be measured at the power level of 10 -6 W to 10 -16 W varies within a range, k represents a set of conditions in the n groups, the method for calculating the linearity can eliminate the laser drift effect generated by an attenuator in a linearity measurement experiment, and finally, the linearity under each light power condition is multiplied to obtain the output signal I of the photomultiplier to be measured C+D (k) Is of non-linearity of (2)
Third, at an incident light power of 10 -11 Under the condition of W, the calibrated silicon photodiode and the photomultiplier to be tested are used for measuring incident light respectively, and the light path II is used for measuring, and the measured optical power data of the calibrated silicon photodiode and the optical power data of the photomultiplier to be tested are compared, and the method sequentially comprises the following steps: firstly, placing the silicon photodiode in the light path II, measuring absolute incident laser power by using the calibrated silicon photodiode, secondly, removing the silicon photodiode, placing a photomultiplier to be measured at the position of the original silicon photodiode, measuring the light response of the photomultiplier to the incident laser, wherein the laser irradiation position is adjusted to be consistent with the linearity measurement in the first step, repeating the steps for ten times, and finally, calculating the ratio of the incident light power measured by the photomultiplier to the incident light power measured by the silicon photodiode, and determining the incident light power of the photomultiplierIs 10 -11 Absolute response under W;
fourth, estimating the incident light power 10 of the photomultiplier to be measured -16 The nonlinear characteristic under the condition of W is combined with the response rate-incident light power curve obtained in the third step, and the fitting method is adopted to estimate the light power to be 10 -16 Absolute light response at W;
fifthly, finally obtaining the photomultiplier to be tested at 10 -11 W to 10 -16 Absolute light response ratio in the W range.
The beneficial effects of the invention are as follows:
the invention can be used for generating the visible light with the power of 10 -11 W to 10 -16 The method for calculating linearity can eliminate the laser drift effect generated by the attenuator in the linearity measurement experiment and eliminate the dependence of the transmission ratio of the attenuator on the wavelength and time in a series of linearity measurement.
Drawings
The following is further described in connection with the figures of the present invention:
FIG. 1 is a schematic diagram of the present invention.
In the figure, a laser, an attenuator I, a camera, a beam splitter I, an attenuator II, a plane mirror I, a shutter II, a shutter 9, a plane mirror II, a beam splitter 11, a cassette 12, a silicon photodiode and a photomultiplier to be measured.
Detailed Description
As shown in FIG. 1, the invention is a schematic diagram, which comprises a laser 1, an attenuator I2, a camera bellows 3, a beam splitter I4, an attenuator II 5, a plane mirror I6, a shutter I7, a shutter II8, a plane mirror II9, a beam splitter II 10, a cassette 11, a silicon photodiode 12 and a photomultiplier 13 to be tested, wherein the beam splitter I4, the attenuator II 5, the plane mirror I6, the shutter I7, the shutter II8, the plane mirror II9, the beam splitter II 10, the cassette 11, the silicon photodiode 12 and the cassette 13 to be tested are all positioned in the camera bellows 3, the silicon photodiode 12 and the photomultiplier 13 to be tested are positioned in the cassette 11, and the laser 1 emits laser light through the attenuators I2 to I4 and the laser 1,The attenuator I2, the beam splitter I4, the shutter I7, the plane mirror II9, the beam splitter II 10 and the silicon photodiode 12 form an optical path I, the laser 1, the attenuator I2, the beam splitter I4, the attenuator II 5, the plane mirror I6, the shutter II8, the beam splitter II 10 and the silicon photodiode 12 form an optical path II, the parameters of the attenuator I2 and the attenuator II 5 are adjusted to measure the linearity under different light power conditions, n groups of attenuator parameters are provided, so that the light power incident on the silicon photodiode 12 can be measured under the light power of 10 from -6 W to 10 -16 W, the attenuator I2, the attenuator II 5 and the optical axis of the measurement system are inclined at an angle to avoid interference, the silicon photodiode 12 is used for measuring the incident light power 10 -6 The response under W is known. The linear measurements of the photomultiplier tube 13 to be measured and the silicon photodiode 12 are carried out at incident light wavelengths of 433 nm, 532 nm, 694 nm, respectively.
The device for estimating the absolute light response rate of the photomultiplier comprises a silicon photodiode 12 at an incident light power 10 -6 The response rate under the W condition is known, the device comprises a laser 1, an attenuator I2, a camera bellows 3, a beam splitter I4, an attenuator II 5, a plane mirror I6, a shutter I7, a shutter II8, a plane mirror II9, a beam splitter II 10, a cassette 11, a silicon photodiode 12 and a photomultiplier 13 to be tested, wherein the beam splitter I4, the attenuator II 5, the plane mirror I6, the shutter I7, the shutter II8, the plane mirror II9, the beam splitter II 10, the cassette 11, the silicon photodiode 12 and the photomultiplier 13 to be tested are all positioned in the camera bellows 3, the silicon photodiode 12 and the photomultiplier 13 to be tested are positioned in the cassette 11, the laser 1 emits laser light to the beam splitter I4 through the attenuator I2, the laser 1, the attenuator I2, the beam splitter I4, the shutter I7, the plane mirror II9, the beam splitter II 10 and the silicon photodiode 12 sequentially form a light path I, the laser 1, the attenuator I2, the beam splitter I4, the attenuator II 5, the plane mirror I6, the shutter II8, the beam splitter II 10 and the silicon photodiode 12 sequentially form a light path II, the linearity under different light power conditions is measured by adjusting parameters of the attenuator I2 and the attenuator II 5, n groups of attenuator parameters are provided, so that the laser light enters the silicon photodiodeThe optical power of the polar tube 12 can be equal to that of the polar tube 10 -6 W to 10 -16 W, the attenuator I2, the attenuator II 5 and the optical axis of the measurement system all have an inclination of a certain angle to avoid interference.
Using the silicon photodiode 12 as a reference for calibrating the absolute optical power of the photomultiplier 13 under test, at an incident optical power of 10 -6 W to 10 -11 The nonlinearity of the silicon photodiode 12 is calibrated under conditions in the W range: by adjusting the plane mirror I6, the plane mirror II9 and the beam splitter II 10 to collimate two light beams and overlapping at the same point of the center of the optical sensor, in the initial state, the shutter I7 and the shutter II8 are both closed, then the shutter I7 is opened, and the output signal I of the silicon photodiode 12 is measured A Then the shutter II8 is opened to measure the output signal I of the silicon photodiode 12 A+B The shutter I7 is closed again, and the output signal I of the silicon photodiode 12 is measured B Then the shutter I7 is opened to measure the output signal I 'of the silicon photodiode 12' B+A The shutter II8 is closed again, and the output signal I 'of the silicon photodiode 12 is measured' A The linearity is obtained byWherein->By adjusting the parameters of the attenuator I2 and the attenuator II 5 to measure the linearity under different light power conditions, n groups of attenuator parameters are provided so that the light power incident on the silicon photodiode 12 can be measured at a value of 10 -6 W to 10 -16 W, k represents one of the above n groups, and finally, the linearity under each optical power condition is multiplied to obtain the output signal I of the silicon photodiode 12 A+B (k) Is of non-linearity of (2)
At an incident light power of 10 -6 W to 10 -11 Calibrating photomultiplier to be measured under W range condition13: removing the silicon photodiode 12, placing the photomultiplier 13 to be tested at the position of the original silicon photodiode 12, collimating two beams of light by adjusting the plane mirror I6, the plane mirror II9 and the beam splitter II 10 and overlapping at the same point of the center of the optical sensor, closing the shutter I7 and the shutter II8 in the initial state, opening the shutter I7, and measuring the output signal I of the photomultiplier 13 to be tested C Then the shutter II8 is opened to measure the output signal I of the photomultiplier 13 to be measured C+D Then the shutter I7 is closed to measure the output signal I of the photomultiplier 13 to be measured D Then the shutter I7 is opened to measure the output signal I 'of the photomultiplier 13 to be measured' D+C Then the shutter II8 is closed, and the output signal I 'of the photomultiplier 13 to be tested is measured' C The linearity is obtained byWherein->By adjusting the parameters of the attenuator I2 and the attenuator II 5 to measure the linearity under different light power conditions, n groups of attenuator parameters are provided so that the light power incident on the silicon photodiode 12 can be measured at a value of 10 -6 W to 10 -16 W, k represents one of the above n groups, and finally, the linearity of each light power condition is multiplied to obtain the output signal I of the photomultiplier 13 to be tested C+D (k) Is>
At an incident light power of 10 -11 Under the condition of W, the calibrated silicon photodiode 12 and the photomultiplier 13 are used for measuring incident light respectively, and the light path II is used for measuring, the measured optical power data of the calibrated silicon photodiode 12 and the optical power data of the photomultiplier 13 are compared, the silicon photodiode 12 is placed in the light path II, the calibrated silicon photodiode 12 is used for measuring absolute incident laser power, and then the silicon is removedA photodiode 12 for placing the photomultiplier 13 to be measured at the position of the original silicon photodiode 12 and measuring the optical response of the photomultiplier 13 to be measured to the incident laser light, wherein the laser irradiation position is adjusted to be consistent with the linearity measurement, repeating the above steps for ten times, and finally calculating the ratio of the incident light power measured by the photomultiplier 13 to the incident light power measured by the silicon photodiode 12 and determining that the incident light power of the photomultiplier 13 to be measured is 10 -11 Absolute response under W;
estimating the incident light power 10 of the photomultiplier 13 to be measured -16 The nonlinear characteristic under the condition W is combined with the obtained response rate-incident light power curve, and the light power is estimated to be 10 by fitting -16 The absolute light response rate at W is finally obtained, and the photomultiplier 13 to be measured is at 10 -11 W to 10 -16 Absolute light response ratio in the W range.
The invention utilizes nonlinear correction to estimate the absolute light response rate of the photomultiplier, can estimate the response rate of incident light with a wider power range, and has the lowest light intensity close to the single photon level.
Claims (1)
1. A device for estimating the absolute light response of a photomultiplier tube, a silicon photodiode (12) at an incident light power 10 -6 The response rate under the condition of W is known, and is characterized in that: including laser instrument (1), attenuator I (2), camera bellows (3), beam splitter I (4), attenuator II (5), plane mirror I (6), shutter I (7), shutter II (8), plane mirror II (9), beam splitter II (10), magazine (11), silicon photodiode (12), photomultiplier (13) await measuring all are located in camera bellows (3), silicon photodiode (12), photomultiplier (13) await measuring are located in beam splitter I (4), laser instrument (1) transmit laser through attenuator I (2) to beam splitter I (4), by laser instrument (1), attenuator I (4), shutter I (7), plane mirror II (9), II (10) and silicon photodiode (12) are by beam splitter I, light path is constituteed according to magazine I in proper order to laser instrument (9), plane mirror II (10) and silicon photodiode (12)The laser (1), the attenuator I (2), the beam splitter I (4), the attenuator II (5), the plane mirror I (6), the shutter II (8), the beam splitter II (10) and the silicon photodiode (12) form a light path II, the linearity under different light power conditions is measured by adjusting the parameters of the attenuator I (2) and the attenuator II (5), n groups of attenuator parameters are shared, so that the light power incident on the silicon photodiode (12) can be measured under the light power of 10 DEG C -6 W to 10 -16 The attenuator I (2) and the attenuator II (5) are inclined at a certain angle with the optical axis of the measuring system to avoid interference;
using the silicon photodiode (12) as a reference for calibrating the absolute optical power of the photomultiplier (13) under test, at an incident optical power of 10 -6 W to 10 -11 The nonlinearity of the silicon photodiode (12) is calibrated under conditions in the W range: two light beams are collimated by adjusting the plane mirror I (6), the plane mirror II (9) and the beam splitter II (10) and overlap at the same point of the center of the optical sensor, in an initial state, the shutter I (7) and the shutter II (8) are both closed, then the shutter I (7) is opened, and the output signal I of the silicon photodiode (12) is measured A Then the shutter II (8) is opened to measure the output signal I of the silicon photodiode (12) A+B Then the shutter I (7) is closed, and the output signal I of the silicon photodiode (12) is measured B Then the shutter I (7) is opened, and the output signal I 'of the silicon photodiode (12) is measured' B+A Then the shutter II (8) is closed, and the output signal I 'of the silicon photodiode (12) is measured' A The linearity is obtained byWherein->Linearity under different optical power conditions is measured by adjusting parameters of the attenuator I (2) and the attenuator II (5), n groups of attenuator parameters are provided so that the optical power incident on the silicon photodiode (12) can be measured at a value of 10 -6 W to 10 -16 W, k represents a set of conditions in the above n groups, and finallyThe linearities under each optical power condition are multiplied to obtain the output signal I of the silicon photodiode (12) A+B (k) Is>
At an incident light power of 10 -6 W to 10 -11 And (3) calibrating the nonlinearity of the photomultiplier (13) to be tested under the condition of W range: removing the silicon photodiode (12), placing the photomultiplier (13) to be tested at the position of the original silicon photodiode (12), collimating two light beams by adjusting the plane mirror I (6), the plane mirror II (9) and the beam splitter II (10) and overlapping at the same point of the center of the optical sensor, closing the shutter I (7) and the shutter II (8) in the initial state, opening the shutter I (7), and measuring the output signal I of the photomultiplier (13) to be tested at the moment C Then the shutter II (8) is opened to measure the output signal I of the photomultiplier (13) to be measured C+D Then the shutter I (7) is closed, and the output signal I of the photomultiplier (13) to be tested is measured D Then the shutter I (7) is opened to measure the output signal I 'of the photomultiplier (13) to be measured' D+C Then the shutter II (8) is closed, and the output signal I 'of the photomultiplier (13) to be tested is measured' C The linearity is obtained byWherein->Linearity under different optical power conditions is measured by adjusting parameters of the attenuator I (2) and the attenuator II (5), n groups of attenuator parameters are provided so that the optical power incident on the silicon photodiode (12) can be measured at a value of 10 -6 W to 10 -16 W, k represents one of the above n groups, and finally, the linearity of each light power condition is multiplied to obtain the output signal I of the photomultiplier (13) to be tested C+D (k) Is>
At an incident light power of 10 -11 Under the condition of W, respectively measuring incident light by using a calibrated silicon photodiode (12) and a photomultiplier to be measured (13), measuring in the light path II, comparing the light power data of the calibrated silicon photodiode (12) with the light power data of the photomultiplier to be measured (13), placing the silicon photodiode (12) in the light path II, measuring absolute incident laser power by using the calibrated silicon photodiode (12), removing the silicon photodiode (12), placing the photomultiplier to be measured (13) at the position of the original silicon photodiode (12), measuring the light response of the photomultiplier to be measured (13) to the incident laser, wherein the laser irradiation position is adjusted to be consistent with the linearity measurement, repeating for ten times, finally calculating the proportion of the incident light power measured by the photomultiplier to the incident light power measured by the silicon photodiode (12), and determining that the incident light power of the photomultiplier to be measured (13) is 10 -11 Absolute response under W;
estimating the incident light power 10 of the photomultiplier (13) to be measured -16 The nonlinear characteristic under the condition W is combined with the obtained response rate-incident light power curve, and the light power is estimated to be 10 by fitting -16 The absolute light response rate at the time of W is finally obtained, and the photomultiplier (13) to be detected is at 10 -11 W to 10 -16 Absolute light response ratio in the W range.
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