CN107086228B - A kind of OLED display - Google Patents

A kind of OLED display Download PDF

Info

Publication number
CN107086228B
CN107086228B CN201610087521.4A CN201610087521A CN107086228B CN 107086228 B CN107086228 B CN 107086228B CN 201610087521 A CN201610087521 A CN 201610087521A CN 107086228 B CN107086228 B CN 107086228B
Authority
CN
China
Prior art keywords
layer
cathode
oled display
electron transfer
activation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610087521.4A
Other languages
Chinese (zh)
Other versions
CN107086228A (en
Inventor
王钊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EverDisplay Optronics Shanghai Co Ltd
Original Assignee
EverDisplay Optronics Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EverDisplay Optronics Shanghai Co Ltd filed Critical EverDisplay Optronics Shanghai Co Ltd
Priority to CN201610087521.4A priority Critical patent/CN107086228B/en
Publication of CN107086228A publication Critical patent/CN107086228A/en
Application granted granted Critical
Publication of CN107086228B publication Critical patent/CN107086228B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes

Abstract

The present invention relates to display technology fields, more particularly to a kind of OLED display, by increasing by one layer of activation of cathode layer between cathode layer and electron transfer layer, the metal reduction that will be aoxidized during vapor deposition, to store the Oxygen Adsorption of cathode bed boundary in OLED use process, greatly enhancing cathode layer is active, increases carrier injectability, improve cathode bed boundary, thus the performance of significant increase OLED display.

Description

A kind of OLED display
Technical field
The present invention relates to display technology field more particularly to a kind of OLED displays.
Background technique
In recent years, belong to selfluminous device Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) device has excellent performance and is widely applied because having as flat-panel display device.Due to the material of OLED device Matter is easily gone bad by after moisture and oxygen invasion, easily causes the degeneration or failure of its characteristic, therefore strictly to prevent to come from The oxygen and moisture of ambient enviroment enter device inside and touch sensitive organic substance and electrode.
Although preparation OLED is to prepare under a high vacuum at present, the metallic vapour for atomic state is during vapor deposition Or it is easy by faint O2Oxidation.Metal/organic interface is easily influenced by oxygen in the OLED course of work, influences to inject Ability, this is that those skilled in the art are reluctant to see.
Summary of the invention
In view of the above problems, the present invention discloses a kind of OLED display, comprising:
Substrate;
Electron transfer layer is arranged in the substrate;
Cathode layer is arranged on the electron transfer layer;And
Activation of cathode layer, be arranged between the electron transfer layer and the cathode layer, and with the cathode layer at least portion Tap touching, is reduced to metal for the metal oxide in the cathode layer.
Preferably, the material of the activation of cathode layer is the material with activation of cathode effect layer, to the metal oxygen While compound is restored, absorbs and store oxygen.
Preferably, the material with activation of cathode effect layer is C60Or CeO2
Preferably, the activation of cathode layer with a thickness of 1nm~5nm.
Preferably, the material of the cathode layer is Mg, Ag, Al or ytterbium (Yb).
Preferably, the OLED display further include: anode layer, setting the substrate and the electron transfer layer it Between;
Hole transmission layer is arranged between the anode layer and the electron transfer layer;
Luminescent layer, the luminescent layer are arranged between the electron transfer layer and the hole transmission layer;
Encapsulated layer is arranged on the cathode layer.
Preferably, the OLED display further include:
Hole injection layer is arranged between the anode layer and the hole transmission layer;
Electron injecting layer is arranged between the electron transfer layer and the activation of cathode layer.
Preferably, the anode layer is composite membrane.
Preferably, the composite membrane includes the tin indium oxide/Ag/ tin indium oxide stacked gradually.
Preferably, the material of the electron transfer layer is 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene (TPBI)。
Foregoing invention is with the following advantages or beneficial effects:
The invention discloses a kind of OLED displays, by increasing between layer and electron transfer layer in cathode (Cathode) Add one layer of activation of cathode layer (Metal Active enhance layer, abbreviation MAEL), the metal that will be aoxidized during vapor deposition Reduction, to store the Oxygen Adsorption of cathode bed boundary in OLED use process, greatly enhancing cathode layer is active, increases Add carrier injectability, improves cathode bed boundary (Cathode Interface), thus significant increase OLED display Energy.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, the present invention and its feature, outer Shape and advantage will become more apparent.Identical label indicates identical part in all the attached drawings.Not can according to than Example draws attached drawing, it is preferred that emphasis is shows the gist of the present invention.
Fig. 1 is the schematic diagram of OLED display device in the embodiment of the present invention.
Specific embodiment
The present invention is further illustrated with specific embodiment with reference to the accompanying drawing, but not as limit of the invention It is fixed.
The present invention discloses a kind of OLED display, comprising: substrate, the electron transfer layer that substrate is arranged in, setting Cathode layer on electron transfer layer and the activation of cathode layer being arranged between electron transfer layer and cathode layer, and the cathode Active layer is at least partly contacted with the surface of cathode layer, and the metal oxide in the cathode is reduced to metal.
In a preferred embodiment of the invention, the material of above-mentioned activation of cathode layer is the material with OSC effect, While to be restored to the metal oxide, absorbs and store oxygen;Since the material with OSC effect can will steam The cathode layer Metal reduction aoxidized during plating, and store the Oxygen Adsorption of cathode bed boundary in OLED use process Come, so that greatly enhancing cathode layer activity, increases carrier injectability, improve cathode bed boundary.
In a preferred embodiment of the invention, the above-mentioned material with OSC effect is C60 or CeO2
In a preferred embodiment of the invention, above-mentioned activation of cathode layer with a thickness of 1~5nm (such as 1nm, 2nm, 3nm or 5nm etc.).
In a preferred embodiment of the invention, the material of above-mentioned cathode layer is Mg, Ag, Al or Yb.
In a preferred embodiment of the invention, the OLED display device further include: anode layer, setting is in substrate and electricity Between sub- transport layer;Hole transmission layer is arranged between anode layer and electron transfer layer;Luminescent layer is arranged in electron transfer layer Between hole transmission layer;Encapsulated layer is arranged on cathode layer.
On this basis, further, above-mentioned anode layer is composite membrane.
On this basis, further, above-mentioned composite membrane includes ITO (Indium Tin Oxide, the oxidation stacked gradually Indium tin)/Ag/ITO.
In a preferred embodiment of the invention, above-mentioned OLED display device further include: setting the anode layer with Hole injection layer between the hole transmission layer and the electricity being arranged between the electron transfer layer and the activation of cathode layer Sub- implanted layer.
In a preferred embodiment of the invention, the material of above-mentioned electron transfer layer is TPBI.
It is 10 in pressure in a preferred embodiment of the invention-5The OLED display device is prepared under the high vacuum of Pa.
The invention will be further elaborated with reference to the accompanying drawing:
As shown in Figure 1, the present embodiment is related to a kind of OLED display device, the specific OLED display device include according to from Under supreme the sequence substrate 1, anode layer 2, hole injection layer 3, hole transmission layer 4, the luminescent layer 5, electron-transport that set gradually Layer 6, electron injecting layer 7, activation of cathode layer 8, cathode layer 9 and encapsulated layer (not shown in figure), wherein the activation of cathode The material of layer 8 is the material with OSC effect so that the metal oxide in the cathode layer 9 is reduced to metal, and to metal oxygen While compound is restored, absorbs and store oxygen;Preferably, material (the i.e. material of activation of cathode layer with OSC effect Material) it can be football alkene (C60) or ceria (CeO2) etc..
Specifically, when the material of activation of cathode layer 8 is CeO2When, its working principles are as follows:
CeO2(1-x)+O2→CeO2(oxygen uptake, oxygen storage capacity)
CeO2+MgO→Mg+CeO2(1-x)+XO2(analysis oxygen ability)
In the present embodiment, the value range of the thickness of the activation of cathode layer be 1nm~5nm (such as 1nm, 2nm, 3nm or Person 5nm etc.);The material of cathode layer 9 is Mg, Ag, Al or Yb etc., and anode layer 2 can be compound using being made of ITO/Ag/ITO Film, the material of electron transfer layer can be TPBI.
In the present embodiment, since the material of cathode layer 9 is usually oxidizable material, although preparation OLED usually exists 10-5It prepares under the high vacuum of Pa, but during vapor deposition or is easy by faint oxygen for the metallic vapour of atomic state (O2) oxidation.Metal/organic interface is easily influenced by oxygen in the OLED course of work, and then influences injectability.And After organic/metal interface increases by one layer of activation of cathode layer, since activation of cathode layer has outstanding oxygen storage capacity and analysis oxygen ability, While reduction to metal electrode metal oxide produced during the preparation process, and the oxygen that reduction can be precipitated into Row absorbs storage, accordingly after device preparation is completed, moreover it is possible to ambient enviroment (i.e. space region locating for organic/metal interface Domain) in oxygen carry out absorption storage, further to improve the oxidation resistance of metal electrode, so be effectively improved it is organic/ Metal interface, thus significant increase OLED performance.
To sum up, the invention discloses a kind of OLED displays, by increasing by one between cathode layer and electron transfer layer Layer activation of cathode layer, will vapor deposition during aoxidize metal reduction, in OLED use process by the oxygen of cathode bed boundary Adsorption storage gets up, greatly enhancing cathode layer activity, increases carrier injectability, improves cathode bed boundary, thus greatly Promote OLED display performance.
It should be appreciated by those skilled in the art that those skilled in the art are combining the prior art and above-described embodiment can be with Realize change case, this will not be repeated here.Such change case does not affect the essence of the present invention, and it will not be described here.
Presently preferred embodiments of the present invention is described above.It is to be appreciated that the invention is not limited to above-mentioned Particular implementation, devices and structures not described in detail herein should be understood as gives reality with the common mode in this field It applies;Anyone skilled in the art, without departing from the scope of the technical proposal of the invention, all using the disclosure above Methods and technical content many possible changes and modifications are made to technical solution of the present invention, or be revised as equivalent variations etc. Embodiment is imitated, this is not affected the essence of the present invention.Therefore, anything that does not depart from the technical scheme of the invention, foundation Technical spirit of the invention any simple modifications, equivalents, and modifications made to the above embodiment, still fall within the present invention In the range of technical solution protection.

Claims (9)

1. a kind of OLED display characterized by comprising
Substrate;
Electron transfer layer is arranged in the substrate;
Cathode layer is arranged on the electron transfer layer;And
Activation of cathode layer, setting at least partly connect between the electron transfer layer and the cathode layer, and with the cathode layer The material that the metal oxide of the cathode layer surface is reduced to activation of cathode layer described in metal is with activation of cathode by touching The material of effect layer while to restore to the metal oxide, absorbs and stores oxygen.
2. OLED display as described in claim 1, which is characterized in that the material with activation of cathode effect layer is C60Or CeO2
3. OLED display as described in claim 1, which is characterized in that the activation of cathode layer with a thickness of 1nm~ 5nm。
4. OLED display as described in claim 1, which is characterized in that the material of the cathode layer be Mg, Ag, Al or Ytterbium.
5. OLED display as described in claim 1, which is characterized in that the OLED display further include: anode layer, It is arranged between the substrate and the electron transfer layer;
Hole transmission layer is arranged between the anode layer and the electron transfer layer;
Luminescent layer, the luminescent layer are arranged between the electron transfer layer and the hole transmission layer;And
Encapsulated layer is arranged on the cathode layer.
6. OLED display as claimed in claim 5, which is characterized in that the OLED display further include:
Hole injection layer is arranged between the anode layer and the hole transmission layer;
Electron injecting layer is arranged between the electron transfer layer and the activation of cathode layer.
7. OLED display as claimed in claim 5, which is characterized in that the anode layer is composite membrane.
8. OLED display as claimed in claim 7, which is characterized in that the composite membrane includes the indium oxide stacked gradually Tin/Ag/ tin indium oxide.
9. OLED display as described in claim 1, which is characterized in that the material of the electron transfer layer is 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene.
CN201610087521.4A 2016-02-16 2016-02-16 A kind of OLED display Active CN107086228B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610087521.4A CN107086228B (en) 2016-02-16 2016-02-16 A kind of OLED display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610087521.4A CN107086228B (en) 2016-02-16 2016-02-16 A kind of OLED display

Publications (2)

Publication Number Publication Date
CN107086228A CN107086228A (en) 2017-08-22
CN107086228B true CN107086228B (en) 2019-11-22

Family

ID=59614088

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610087521.4A Active CN107086228B (en) 2016-02-16 2016-02-16 A kind of OLED display

Country Status (1)

Country Link
CN (1) CN107086228B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109994643B (en) * 2018-01-02 2021-02-02 京东方科技集团股份有限公司 Organic light emitting diode device, manufacturing method thereof, display substrate and display device
CN109546001B (en) * 2018-11-22 2021-02-26 京东方科技集团股份有限公司 Display panel, preparation method thereof and display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101582488A (en) * 2009-06-25 2009-11-18 彩虹集团公司 Packaging cover plate of organic electroluminescence device
CN104485350A (en) * 2014-12-26 2015-04-01 北京维信诺科技有限公司 Organic light-emitting display device and manufacturing method thereof
CN104835919A (en) * 2015-05-26 2015-08-12 京东方科技集团股份有限公司 Electroluminescent device and preparation method thereof, display substrate and display device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7221088B2 (en) * 2000-11-29 2007-05-22 The United States Of America As Represented By The Secretary Of The Navy Universal host for RG or RGB emission in organic light emitting devices
US7893430B2 (en) * 2009-02-26 2011-02-22 Battelle Memorial Institute OLED devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101582488A (en) * 2009-06-25 2009-11-18 彩虹集团公司 Packaging cover plate of organic electroluminescence device
CN104485350A (en) * 2014-12-26 2015-04-01 北京维信诺科技有限公司 Organic light-emitting display device and manufacturing method thereof
CN104835919A (en) * 2015-05-26 2015-08-12 京东方科技集团股份有限公司 Electroluminescent device and preparation method thereof, display substrate and display device

Also Published As

Publication number Publication date
CN107086228A (en) 2017-08-22

Similar Documents

Publication Publication Date Title
Lee et al. Tris-(8-hydroxyquinoline) aluminum-based organic light-emitting devices with Al/CaF 2 cathode: Performance enhancement and interface electronic structures
EP2638579A1 (en) Organic electroluminescent device
JP5994146B2 (en) Inverse structure top emission type device and manufacturing method thereof
CN104851984B (en) Oganic light-emitting display device
CN107086228B (en) A kind of OLED display
CN108281562B (en) Electrode and organic electroluminescent device using same
KR20130123236A (en) Transparent electrode, flexible organic light emitting diode with the same and manufacturing method thereof
Sun et al. Buffer-enhanced electron injection in organic light-emitting devices with copper cathode
Takada et al. Inverted organic light-emitting diodes using different transparent conductive oxide films as a cathode
CN110112325B (en) Transparent cathode structure, organic light emitting diode, array substrate and display device
CN103050635A (en) Top emission OLED (Organic Light-Emitting Diode) and preparation method thereof
CN108281564B (en) Electrode and organic electroluminescent device using same
CN204088384U (en) A kind of inversion OLED structure based on flexible base, board
CN108717956B (en) Organic light emitting display panel and display device thereof
CN103165825B (en) Organic electroluminescence device and preparation method thereof
CN103594652A (en) Double-face luminescence organic electroluminescent device and preparation method thereof
Talik et al. Highly efficient processable molybdenum trioxide as a hole blocking interlayer for super-yellow organic light emitting diode
CN103137880B (en) Organic electroluminescence device and preparation method thereof
WO2018127127A1 (en) Electrode and organic electroluminescent component applying same
Yu et al. Double-layer structured hole injection layer to enhance quantum-dot light-emitting diodes
CN103972408A (en) Organic light-emitting device and method for manufacturing same
CN104183767A (en) Organic light emitting diode and preparation method thereof
Acharya et al. Improving the Performance of a Hybrid Inorganic–Organic Light-Emitting Diode Through Structure Optimization
CN104078599B (en) Organic electroluminescence device and preparation method thereof
CN108281563A (en) A kind of electrode and apply its organic electroluminescence device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: 201506, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District

Patentee after: Shanghai Hehui optoelectronic Co., Ltd

Address before: 201506, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District

Patentee before: EverDisplay Optronics (Shanghai) Ltd.

CP01 Change in the name or title of a patent holder