CN107085321A - 光罩及其应用于主动开关阵列基板的制造方法 - Google Patents
光罩及其应用于主动开关阵列基板的制造方法 Download PDFInfo
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Abstract
本发明为一种光罩及其应用于主动开关阵列基板的制造方法,所述光罩包括:一透光区,具有透光性的基材;一半透光区,设置于所述透光性的基材上,且由铬或铬化合物所形成;一遮光区,设置于所述透光性的基材上;以及多条细线反光材质层,设置于所述半透光区和所述遮光区之间,且由铬或铬化合物所形成;其中,所述光罩的透光率依据一低反光材质的掺入及分布密度而调节,使所述半透光区的透光率低于所述透光区的透光率,且高于所述遮光区的透光率,且本发明可以提升画素开口率与降低光罩成本。
Description
技术领域
本发明涉及一种制造方式,特别是涉及一种光罩及其应用于主动开关阵列基板的制造方法。
背景技术
随着科技进步,具有省电、无幅射、体积小、低耗电量、平面直角、高分辨率、画质稳定等多项优势的液晶显示器,尤其是现今各种信息产品如:手机、笔记本电脑、数字相机、PDA、液晶屏幕等产品的普及,亦使得液晶显示器(LCD)的需求量大大提升。因此如何满足日益要求高分辨率的画素设计,且具有高画质、空间利用效率佳、低消耗功率、无辐射等优越特性的薄膜晶体管液晶显示器(thin film transistor liquid crystal display,TFT-LCD)已逐渐成为市场的主流。其中,主动开关阵列基板为组立液晶显示器的重要构件之一。
液晶显示器由一彩色滤光基板、主动开关阵列基板及二基板间充满液晶所构成,在较大尺寸液晶显示器中,其为维持二基板的间隙,在液晶层内分布多个间隔物以维持间隙高度保持二基板平行,另在液晶注入法以液晶真空注入法为主,但注入时间耗时,目前逐渐以滴下注入法(One Drop Fill,ODF)取代,对于间隔物的结构需要更新设计。已知技术以球型间隔物分布在液晶层间,此种结构在基板受到压力时,因间隔物滚动而破坏基板,或因为任意分布而位于画素区内产生不均匀分布,更因为间隔物的散射问题而影响产品良率,近年以微影技术形成间隔物(Photo Spacer,PS),精确的控制间隔物的位置、大小及高度取代传统球型间隔物的构造。
而液晶显示器中间隙结构的功能在于控制显示器第一基板和第二基板的间隔。因为上下两片玻璃之间主要填入液晶材料。如果没有间隙结构的支撑,上下两片玻璃的间隔的均匀性无法很好地维持。然而,第一基板和第二基板间隔的均匀性对于维持液晶显示器的显示效果及其电讯质量有重要的影响。
而主动开关阵列基板有分为具有红绿蓝光阻层在对向基板中(RGB on CF)、在平面转换型的液晶面板中具有红绿蓝光阻层在主动开关阵列基板(RGB on Array/In-PlaneSwitching,IPS mode)及在垂直配向型的液晶面板中具有红绿蓝光阻层在主动开关阵列基板(RGB on Array/Vertical Alignment,VA mode)。如此一来,如何提高分辨率的画素设计,其中有关主动开关阵列基板的画素结构设计将扮演一个关键设计,且传统红绿蓝白光阻层四色液晶显示器,由于穿透率较高,目前已为多家面板厂COA or COT(Color on Arrayor Color on TFT)开发的技术,但需在红绿蓝白彩色光阻工艺后再加上光间隔物(PhotoSpacer)工艺,故使用较多材料,管控困难,工艺流程繁复,设备投资较高,由于白色光阻与光间隔物皆属于透明材料,且白色光阻比光间隔物材料至少贵3成,故有多家厂商极力开发以光间隔物取代白色光阻材料,但实际上由于光间隔物感亮度不够高,通孔的形成较小,因此需将白色光阻通孔尺寸加大50um以上以求曝出通孔>20um,如此一来会大大牺牲开口率,造成设计上的难度或影响制程良率。
发明内容
为了解决上述技术问题,本发明的目的在于,提供一种光罩及其应用于主动开关阵列基板的制造方法,将可以提升画素开口率与降低光罩成本。
本发明的目的及解决其技术问题是采用以下技术方案来实现的。依据本发明提出的一种光罩,所述光罩包括:一透光区,具有透光性的基材;一半透光区,设置于所述透光性的基材上,且由铬或铬化合物所形成;一遮光区,设置于所述透光性的基材上;以及多条细线反光材质层,设置于所述半透光区和所述遮光区之间;其中,所述光罩的透光率依据一低反光材质的掺入及分布密度而调节,使所述半透光区的透光率低于所述透光区的透光率,且高于所述遮光区的透光率。
本发明的另一目的一种主动开关阵列基板的制造方法,包括:提供一第一基底;形成一第一绝缘层于所述第一基底上;形成多个主动开关单元于所述第一绝缘层上;依序形成多个平行配置的光阻层于所述第一绝缘层上,以完成一彩色滤光层;同时形成多个光间隔物及多个通孔于所述彩色滤光层上,其包括:在所述彩色滤光层上形成一遮光材料层,以覆盖所述彩色滤光层;在所述遮光材料层上设置一光罩,所述光罩具有一透光区、一遮光区以及一半透光区;及进行一曝光制造以及一显影制造,以图案化所述遮光材料层,而形成所述多个光间隔物及该些通孔,所述半透光区与所述遮光区的边缘邻接处添加多条细线反光材质层,所述光罩接触曝光时,所述多条细线反光材质层会使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉,而使所述多个光阻层其一所形成的通孔大于20um;以及形成一透明电极层,在所述彩色滤光层上;其中,通过调节低反光材质的掺入及分布密度,调节所述光罩的透光率。
本发明的再一目的一种光罩,所述光罩包括:一透光区,具有透光性的基材;一半透光区,设置于所述透光性的基材上,且由铬或铬化合物所形成;一遮光区,设置于所述透光性的基材上;以及多条细线反光材质层,设置于所述半透光区和所述遮光区之间;所述多条细线反光材质层,其细线的细线宽度与间隙宽度为1~5um;所述光罩接触曝光时,所述多条细线反光材质层会使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉;所述半透光区形成有一部分可穿透曝光光的半透光膜,所述遮光区形成有具遮光性的膜;所述光罩的透光率依据一低反光材质的掺入及分布密度而调节;所述低反光材质为铬金属及其化合物所组成的群组,通过调节所述铬及其化合物的掺入量及分布密度,调节所述光罩的所述半透光区的透光率,其中所述半透光区的透光率介于30%到70%之间;其中所述遮光区含铬0%及所述透光区含铬约98%。
本发明解决其技术问题还可采用以下技术措施进一步实现。
在本发明的一实施例中,所述多条细线反光材质层,其细线的细线宽度与间隙宽度为1~5um。
在本发明的一实施例中,所述光罩接触曝光时,所述多条细线反光材质层会使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉。
在本发明的一实施例中,所述半透光区形成有一部分可穿透曝光光的半透光膜,所述遮光区形成有具遮光性的膜,所述半透光区的透光率介于30%到70%。
在本发明的一实施例中,所述多条细线反光材质层及所述低反光材质的材质是选自于铬金属及其化合物所组成的群组。
在本发明的一实施例中,所述制造方法,所述低反光材质为铬及其化合物所组成的群组。
在本发明的一实施例中,所述制造方法,所述光罩为灰阶光罩,并添加多条细线反光材质层以产生狭缝光干涉。
在本发明的一实施例中,所述制造方法,所述多条细线宽及间距为1~5um。
本发明可以提升画素开口率与降低光罩成本。
附图说明
图1a是范例性的具有红绿蓝光白阻层及光间隔物在主动开关阵列基板中横截面示意图。
图1b是范例性的具有红绿蓝白光阻层及光间隔物与光罩在主动开关阵列基板中横截面示意图。
图2a是依据本发明的方法,具有红绿蓝白光阻层及光间隔物与光罩在主动开关阵列基板中横截面示意图。
图2b是依据本发明的方法,具有红绿蓝白光阻层及光间隔物在主动开关阵列基板中横截面示意图。
图3是依据本发明的方法,具有反光材质层细线与间隙图案示意图。
具体实施方式
以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。
附图和说明被认为在本质上是示出性的,而不是限制性的。在图中,结构相似的单元是以相同标号表示。另外,为了理解和便于描述,附图中示出的每个组件的尺寸和厚度是任意示出的,但是本发明不限于此。
在附图中,为了清晰起见,夸大了层、膜、面板、区域等的厚度。在附图中,为了理解和便于描述,夸大了一些层和区域的厚度。将理解的是,当例如层、膜、区域或基底的组件被称作“在”另一组件“上”时,所述组件可以直接在所述另一组件上,或者也可以存在中间组件。
另外,在说明书中,除非明确地描述为相反的,否则词语“包括”将被理解为意指包括所述组件,但是不排除任何其它组件。此外,在说明书中,“在......上”意指位于目标组件上方或者下方,而不意指必须位于基于重力方向的顶部上。
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合附图及较佳实施例,对依据本发明提出的一种光罩及其应用于主动开关阵列基板的制造方法,其具体实施方式、结构、特征及其功效,详细说明如后。
本发明的液晶面板可包括主动开关(例如Thin Film Transistor,TFT)基板、彩色滤光层(Color Filter,CF)基板与形成于两基板之间的液晶层。
在一实施例中,本发明的液晶面板可为曲面型显示面板。
在一实施例中,本发明的主动开关(如TFT)及彩色滤光层(CF)可形成于同一基板上。
图1a为范例性的具有红绿蓝白光阻层及光间隔物在主动开关阵列基板中横截面示意图。请参照图1a,一种主动开关阵列基板10,包括:一第一基底100;一第一绝缘层105,设置在所述第一基底100上;多个主动开关单元130,设置在所述第一绝缘层105上;一彩色滤光层106,设置在所述第一绝缘层105上,并包括多个平行配置的第一光阻层110、第二光阻层111及第三光阻层112;多个光间隔物114,设置在所述彩色滤光层106上,其材料相同于该些第三光阻层112的材料,其中所述该些第三光阻层112具有至少一个通孔140;以及一透明电极层120,设置在所述彩色滤光层106上。
图1b为范例性的具有红绿蓝白光阻层及光间隔物与光罩在主动开关阵列基板中横截面示意图。请参照图1a及图1b,一种主动开关阵列基板10,包括:一第一基底100;一第一绝缘层105,设置在所述第一基底100上;多个主动开关单元130,设置在所述第一绝缘层105上;一彩色滤光层106,设置在所述第一绝缘层105上,并包括多个平行配置的第一光阻层110、第二光阻层111及第三光阻层112;多个光间隔物114,设置在所述彩色滤光层106上,其材料相同于该些第三光阻层112的材料,其中所述该些第三光阻层112具有至少一个通孔140且所述通孔140尺寸为d1;以及一透明电极层120,设置在所述彩色滤光层106上。
在一实施例中,一光罩200,包括:一含铬0%的遮光区230、一含铬约98%的透光区220及一半透光区210。
图2a为依据本发明的方法,具有红绿蓝白光阻层及光间隔物与光罩在主动开关阵列基板中横截面示意图及图2b依据本发明的方法,具有红绿蓝白光阻层及光间隔物在主动开关阵列基板中横截面示意图。请参照图2b,一种主动开关阵列基板11,包括:一第一基底100;一第一绝缘层105,设置在所述第一基底100上;多个主动开关单元130,设置在所述第一绝缘层105上;一彩色滤光层106,设置在所述第一绝缘层105上,并包括多个平行配置的第一光阻层110、第二光阻层111及第三光阻层112;多个光间隔物114,设置在所述彩色滤光层106上,其材料相同于该些第三光阻层112的材料,其中所述该些第三光阻层112具有至少一个通孔150;以及一透明电极层120,设置在所述彩色滤光层106上。
请参照图2a及图2b,在本发明一实施例中,一种主动开关阵列基板11,包括:一第一基底100;一第一绝缘层105,设置在所述第一基底100上;多个主动开关单元130,设置在所述第一绝缘层105上;一彩色滤光层106,设置在所述第一绝缘层105上,并包括多个平行配置的第一光阻层110、第二光阻层111及第三光阻层112;多个光间隔物114,设置在所述彩色滤光层106上,其材料相同于该些第三光阻层112的材料,其中所述该些第三光阻层112具有至少一个通孔150且所述通孔150尺寸为d2;以及一透明电极层120,设置在所述彩色滤光层106上。
在一实施例中,所述通孔150尺寸d2大于20um。
在一实施例中,所述光间隔物114与所述第三光阻层112为相同材料一体成型。
在一实施例中,所述光间隔物114与所述第三光阻层112的组合外形为一上窄下宽的凸起外形。
在一实施例中,一光罩201,包括:一含铬0%的遮光区230、一含铬约98%的透光区220、一半透光区210以及多条细线212反光材质层以产生狭缝光干涉,其中细线宽d3及间距d4为1~5um。
请参照图2a及图2b,在本发明一实施例中,一种主动开关阵列基板11,包括:一第一基底100;一第一绝缘层105,设置在所述第一基底100上;多个主动开关单元130,设置在所述第一绝缘层105上;一彩色滤光层106,设置在所述第一绝缘层105上,并包括多个光阻层110、111、112;多个光间隔物114,设置在所述彩色滤光层106上,其材料相同于所述多个光阻层110、111、112其一(举例:白色光阻层)的材料;其中所述多个光阻层110、111、112其一及所述多个光间隔物114的形成是通过一光罩201进行曝光,所述光罩201具有透光区220、半透光区210、及遮光区230,所述半透光区210与所述遮光区230的边缘邻接处添加多条细线212反光材质层,所述光罩201接触曝光时,所述多条细线212反光材质层会使所述半透光区210与所述遮光区230的边缘邻接处产生狭缝光干涉,而使所述多个光阻层110、111、112其一所形成的通孔150尺寸d2大于20um;以及一透明电极层120,设置在所述彩色滤光层106上。
请参照图2a及图2b,在本发明一实施例中,一种主动开关阵列基板11的制造方法,包括:提供一第一基底100;形成一第一绝缘层105于所述第一基底100上;形成多个主动开关单元130于所述第一绝缘层105上;依序形成多个平行配置的光阻层110、111、112于所述第一绝缘层105上,以完成一彩色滤光层106;同时形成多个光间隔物114及多个通孔105于所述彩色滤光层106上,其包括:在所述彩色滤光层106上形成一遮光材料层,以覆盖所述彩色滤光层106;在所述遮光材料层上设置一光罩201,所述光罩201具有一透光区220、一遮光区230以及一半透光区210;及进行一曝光制造以及一显影制造,以图案化所述遮光材料层,而形成所述多个光间隔物114及该些通孔105,所述半透光区210与所述遮光区230的边缘邻接处添加多条细线212反光材质层,所述光罩201接触曝光时,所述多条细线212反光材质层会使所述半透光区210与所述遮光区230的边缘邻接处产生狭缝光干涉,而使所述多个光阻层110、111、112其一112所形成的通孔105大于20um;以及形成一透明电极层120,在所述彩色滤光层106上;其中,通过调节低反光材质的掺入及分布密度,调节所述光罩201的透光率。
在一实施例中,所述半透光区210的透光率介于30%到70%。
在一实施例中,所述低反光材质为铬及其化合物所组成的群组。
在一实施例中,通过所述半透光区210的设计,使得所述多个光阻层110、111、112之一112所形成的通孔150大于20μm。
在一实施例中,所述光罩201为灰阶光罩,并添加多条细线212反光材质层以产生狭缝光干涉,其中细线宽d3及间距d4为1~5um。
在一实施例中,该些光间隔物114是通过相同的光罩201而形成至少一种段差。
图3为依据本发明的方法,具有反光材质层细线与间隙图案示意图。请参照图3、图2a及图2b,一种光罩201,包括:一透光区220,具有透光性的基材;一半透光区210,设置于所述透光性的基材上,且由铬或铬化合物所形成;一遮光区230,设置于所述透光性的基材上;以及多条细线212反光材质层,设置于所述半透光区210和所述遮光区230之间,其可例如由铬或铬化合物所形成,但不限于此,亦可以由其他吸光性质的金属或化合物所形成。其中,所述光罩201的透光率依据一低反光材质的掺入及分布密度而调节,使所述半透光区210的透光率低于所述透光区220的透光率,且高于所述遮光区230的透光率。
在一实施例中,所述光罩201接触曝光时,所述多条细线212反光材质层会使所述半透光区210与所述遮光区230的边缘邻接处产生狭缝光干涉。
在一实施例中,所述多条细线212反光材质层,其细线的细线宽度d3与间隙d4宽度为1~5um。
在一实施例中,所述半透光区210形成有一部分可穿透曝光光的半透光膜,所述遮光区230形成有具遮光性的膜。
在一实施例中,所述多条细线212反光材质层及所述低反光材质的材质是选自于铬金属及其化合物所组成的群组。
在一实施例中,所述半透光区210的透光率介于30%到70%。
在一实施例中,所述光罩201为灰阶光罩,并添加多条细线212反光材质层以产生狭缝光干涉,其中细线宽d3及间距d4为1~5um。
在不同实施例中,多灰阶光罩,可分为灰色光罩(Gray-tone mask)和半色调光罩(Half tone mask)2种。灰色光罩是制作出曝光机分辨率以下的微缝,再藉由此微缝部位遮住一部份的光源,以达成半曝光的效果。另一方面,半色调光罩是利用「半透过」的膜,来进行半曝光。因为以上两种方式皆是在1次的曝光过程后即可呈现出「曝光部分」「半曝光部分」及「未曝光部分」3种的曝光层次,故在显影后能够形成2种厚度的光阻(藉由利用这样的光阻厚度差异、便可以较一般少的片数下将图形转写至面板基板上,并达成面板生产効率的提升)。若为半色调光罩则光罩成本会略高于一般光罩。
本发明可以提升画素开口率与降低光罩成本。
“在一些实施例中”及“在各种实施例中”等用语被重复地使用。此用语通常不是指相同的实施例;但它亦可以是指相同的实施例。“包含”、“具有”及“包括”等用词是同义词,除非其前后文意显示出其它意思。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。
Claims (10)
1.一种光罩,其特征在于,包括:
一透光区,具有透光性的基材;
一半透光区,设置于所述透光性的基材上,且由铬或铬化合物所形成;
一遮光区,设置于所述透光性的基材上;以及
多条细线反光材质层,设置于所述半透光区和所述遮光区之间;
其中,所述光罩的透光率依据一低反光材质的掺入及分布密度而调节,使所述半透光区的透光率低于所述透光区的透光率,且高于所述遮光区的透光率。
2.如权利要求1所述的光罩,其特征在于,所述多条细线反光材质层,其细线的细线宽度与间隙宽度为1~5um。
3.如权利要求1所述的光罩,其特征在于,所述光罩接触曝光时,所述多条细线反光材质层会使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉。
4.如权利要求1所述的光罩,其特征在于,所述半透光区形成有一部分可穿透曝光光的半透光膜,所述遮光区形成有具遮光性的膜,所述半透光区的透光率介于30%到70%。
5.如权利要求1所述的光罩,其特征在于,所述多条细线反光材质层及所述低反光材质的材质是选自于铬金属及其化合物所组成的群组。
6.一种主动开关阵列基板的制造方法,其特征在于,包括:
提供一第一基底;
形成一第一绝缘层于所述第一基底上;
形成多个主动开关单元于所述第一绝缘层上;
依序形成多个平行配置的光阻层于所述第一绝缘层上,以完成一彩色滤光层;
同时形成多个光间隔物及多个通孔于所述彩色滤光层上,其包括:
在所述彩色滤光层上形成一遮光材料层,以覆盖所述彩色滤光层;
在所述遮光材料层上设置一光罩,所述光罩具有一透光区、一遮光区以及一半透光区;及
进行一曝光制造以及一显影制造,以图案化所述遮光材料层,而形成所述多个光间隔物及该些通孔,其中,所述半透光区与所述遮光区的边缘邻接处添加多条细线反光材质层,所述光罩接触曝光时,所述多条细线反光材质层会使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉,而使所述多个光阻层其一所形成的通孔大于20um;以及
形成一透明电极层,在所述彩色滤光层上;
其中,通过调节低反光材质的掺入及分布密度,调节所述光罩的透光率。
7.如权利要求6所述的主动开关阵列基板的制造方法,其特征在于,所述低反光材质为铬及其化合物所组成的群组。
8.如权利要求6所述的主动开关阵列基板的制造方法,其特征在于,所述光罩为灰阶光罩,并添加多条细线反光材质层以产生狭缝光干涉。
9.如权利要求6所述的主动开关阵列基板的制造方法,其特征在于,所述多条细线宽及间距为1~5um。
10.一种光罩,其特征在于,所述光罩包括:
一透光区,具有透光性的基材;
一半透光区,设置于所述透光性的基材上,且由铬或铬化合物所形成;
一遮光区,设置于所述透光性的基材上;以及
多条细线反光材质层,设置于所述半透光区和所述遮光区之间;
所述多条细线反光材质层,其细线的细线宽度与间隙宽度为1~5um;
所述光罩接触曝光时,所述多条细线反光材质层会使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉;
所述半透光区形成有一部分可穿透曝光光的半透光膜,所述遮光区形成有具遮光性的膜;
所述光罩的透光率依据一低反光材质的掺入及分布密度而调节;
所述低反光材质为铬金属及其化合物所组成的群组,通过调节所述铬及其化合物的掺入量及分布密度,调节所述光罩的所述半透光区的透光率,其中所述半透光区的透光率介于30%到70%之间;其中所述遮光区含铬0%及所述透光区含铬约98%。
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US10488699B2 (en) | 2017-12-29 | 2019-11-26 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for manufacturing black matrix and spacer |
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