CN107085007A - Detect the device and method of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter - Google Patents
Detect the device and method of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter Download PDFInfo
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- CN107085007A CN107085007A CN201710139104.4A CN201710139104A CN107085007A CN 107085007 A CN107085007 A CN 107085007A CN 201710139104 A CN201710139104 A CN 201710139104A CN 107085007 A CN107085007 A CN 107085007A
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The present invention proposes the device and method of detection one-dimensional micro-nanometer conducting material thermoelectricity performance parameter.The detection device includes：Heater wire, its two ends is heat sink with first respectively, second heat sink is connected；First line of induction, is set in parallel in the lower section of heater wire, and two ends are heat sink with the 3rd respectively, the 4th heat sink is connected；Second line of induction, is set in parallel in the lower section of first line of induction, and two ends are heat sink with the 5th respectively, the 6th heat sink is connected；Heating power supply, is connected with heater wire and is used to heat heater wire；First electrical parameters detection component, is connected with first line of induction and is detected for the electrical parameter to first line of induction；And the second electrical parameters detection component, it is connected with second line of induction and is detected for the electrical parameter to second line of induction.Detection device proposed by the invention, available for the thermoelectricity capability parameter of detection one-dimensional micro-nanometer material, error caused by contact thermal resistance is greatly reduced, the precision of measurement is improved.
Description
Technical field
The present invention relates to micro Nano material technical field of measurement and test, specifically, the present invention relates to detection one-dimensional micro-nanometer material
The device and method of thermoelectricity capability parameter.
Background technology
In recent years, increasingly serious with environmental pollution and energy crisis, thermoelectric material is caused due to its unique performance
Extensive concern, and show in numerous areas such as space flight, microelectronics, opto-electronic device and energy-conserving and environment-protective wide application
Prospect so that synthesis, performance test and the theoretical research of novel micro nanometer rice thermoelectric material are rapidly developed.But, due to heat
The special characteristics such as the size and anisotropy of electric material so that traditional method that can be used for test block materials pyroelecthc properties is past
Toward the pyroelecthc properties that cannot be used for measuring the micro-nano-scale material.
Therefore, the measurement of micro-nano pyroelectric material performance and characterizing method still have much room for improvement.
The content of the invention
It is contemplated that at least solving one of technical problem in correlation technique to a certain extent.
The present invention is the following discovery based on inventor and completed：
The present inventor has found that thermoelectric figure of merit coefficient Z is the important ginseng for weighing thermoelectric material combination property in research process
Number, it is defined as：Z=σ S2/ λ, wherein S are Seebeck coefficient, and σ and λ are respectively the electrical conductivity and thermal conductivity of material.From excellent
Value coefficient expression formula can be seen that Seebeck coefficient and electrical conductivity is bigger, and thermal conductivity is smaller, and the thermoelectricity capability of material is better.Its
In, Seebeck coefficient is embodied as：S=VS/ △ T, wherein, VSFor Seebeck electromotive force, △ T are the temperature at thermoelectric material two ends
Difference.And it is existing it is several measurement micro-nano-scale thermoelectricity capability method, influence of its thermal contact resistance to measurement result be difficult to by
Eliminate, so that extra measurement error can be caused.
The present inventor by further investigation find, by a kind of composite measurement one-dimensional micro-nanometer material thermal conductivity,
The method of electrical conductivity and Seebeck coefficient, can efficiently reduce influence of the thermal contact resistance to measurement result.This method uses three
Testing sample is overlapped on three p-wires by p-wire respectively as heater wire and the line of induction, is added by being powered to heater wire
Heat so that form temperature end on the test specimen, then other two p-wires obtain testing sample difference as the line of induction and taken respectively
The stable state temperature rise of junction.Further, the direct current Seebeck electricity between two overlapped points of the also measurable line of induction and testing sample
Pressure, and then obtain the thermal conductivity and Seebeck coefficient of testing sample；And four cable architectures (being in king's font) formed using overlap joint can
Obtain the electrical conductivity of testing sample, and then the thermoelectricity capability of comprehensive characterization material.
In view of this, it is an object of the present invention to propose a kind of effectively reduction thermal contact resistance influence, device simply, easily
In the means of the low detection one-dimensional micro-nanometer conducting material thermoelectricity performance parameter of measurement or testing cost.
In the first aspect of the present invention, the present invention proposes a kind of for detecting one-dimensional micro-nanometer conducting material thermoelectricity performance parameter
Equipment.
Embodiments in accordance with the present invention, the equipment includes：
Heater wire, the first end of the heater wire with first it is heat sink be connected, the second end of the heater wire and second heat sink
It is connected；
First line of induction, first line of induction is flushed with the two ends of the heater wire, and first line of induction is flat
Row is arranged on the lower section of the heater wire, and the first end of first line of induction with the 3rd it is heat sink be connected, described first feels
The second end of line is answered heat sink to be connected with the 4th；
Second line of induction, second line of induction is flushed with the two ends of first line of induction, and second sensing
Line is set in parallel in the lower section of first line of induction, and the first end of second line of induction with the 5th it is heat sink be connected, institute
The second end of second line of induction is stated with the 6th heat sink to be connected；
Heating power supply, the heating power supply is connected with the heater wire, for being heated to the heater wire；
First electrical parameters detection component, the first electrical parameters detection component is connected with first line of induction, for pair
The electrical parameter of first line of induction is detected；And
Second electrical parameters detection component, the second electrical parameters detection component is connected with second line of induction, for pair
The electrical parameter of second line of induction is detected.
Inventor, can be effective for one-dimensional micro-nanometer material it was unexpectedly observed that using the detection device of the embodiment of the present invention
The thermoelectricity capability parameter of material is detected, can separate fire end and test lead, so that it is big to contact error caused by thermal resistance
It is big to reduce, improve the precision of measurement；And on the basis of a sample overlap joint is carried out, can sequentially it be obtained by changing measuring circuit
Obtain a variety of thermoelectricity capability parameters of testing sample, you can comprehensive characterization is carried out to the thermoelectricity capability of testing sample, with very high
Integrated level.
In addition, detection device according to the above embodiment of the present invention, can also have technical characteristic additional as follows：
Embodiments in accordance with the present invention, the equipment further comprises：First overlapped points, first overlapped points are arranged on
On the heater wire；Second overlapped points, second overlapped points are arranged on first line of induction；And the 3rd overlapped points,
3rd overlapped points are arranged on second line of induction.
Embodiments in accordance with the present invention, the equipment further comprises：3rd electrical parameters detection component, the 3rd electricity ginseng
Number detection components are used to detect the electrical parameter between second overlapped points and the 3rd overlapped points.
Embodiments in accordance with the present invention, the heater wire, first line of induction and second line of induction at least it
One is formed by platinum.
Embodiments in accordance with the present invention, the first electrical parameters detection component includes：First power supply；First resistor, it is described
First resistor, first power supply and first line of induction electrical circuit in series；First voltage table, the first voltage table
It is in parallel with the first resistor；And second voltage table, the second voltage table and the described first sensing line parallel.
Embodiments in accordance with the present invention, the second electrical parameters detection component includes：Second source；Second resistance, it is described
Second resistance, the second source and second line of induction electrical circuit in series；Tertiary voltage table, the tertiary voltage table
It is in parallel with the second resistance；And the 4th voltmeter, the 4th voltmeter and the described second sensing line parallel.
Embodiments in accordance with the present invention, the 3rd electrical parameters detection component includes：3rd power supply；3rd resistor, it is described
Second source described in 3rd resistor and testing sample are located at the hypomere structure between second overlapped points and the 3rd overlapped points
Into electrical circuit；5th voltmeter, the 5th voltmeter is in parallel with the 3rd resistor；And the 6th voltmeter, the described 6th
Voltmeter is in parallel with the hypomere of the testing sample.
Embodiments in accordance with the present invention, the equipment further comprises：Computation module, the computation module respectively with it is described
First electrical parameters detection component, the second electrical parameters detection component and the 3rd electrical parameters detection component are connected, for determining described treat
The thermoelectricity capability parameter of test sample product.
Embodiments in accordance with the present invention, the thermoelectricity capability parameter of the testing sample include thermal conductivity, Seebeck coefficient and
At least one of electrical conductivity；
Wherein, the thermal conductivity is determined based on following equation：
λ=λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2),
Wherein, λ3It is the thermal conductivity of second line of induction, A3It is the cross-sectional area of second line of induction, l3It is described
The length of second line of induction, l42It is the length of the hypomere of the testing sample, △ R3It is to start described the after the heating power supply
The resistance variations of two lines of induction, A4It is the cross-sectional area of the testing sample, l31It is the first end of second line of induction
With the length between the 3rd overlapped points, l32It is between second end of second line of induction and the 3rd overlapped points
Length, △ R2It is the resistance variations for starting first line of induction after the heating power supply, R03It is second line of induction 0
Resistance at a temperature of DEG C, βT3It is temperature-coefficient of electrical resistance of second line of induction in environment temperature T, △ R3It is to start described add
The resistance variations of second line of induction, R after thermoelectric generator02It is resistance of first line of induction at a temperature of 0 DEG C, βT2It is institute
State temperature-coefficient of electrical resistance of first line of induction in environment temperature T；
The Seebeck coefficient is determined based on following equation：
S=VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02βT2)+Ss, wherein, VS is the hypomere of the testing sample, institute
State between the second overlapped points of first line of induction and the second end between the 3rd overlapped points of second line of induction and the second end
Direct current Seebeck potential, R02It is resistance of first line of induction at a temperature of 0 DEG C, βT2It is first line of induction in ring
Temperature-coefficient of electrical resistance during the temperature T of border, R03It is resistance of second line of induction at a temperature of 0 DEG C, βT3It is second sensing
Temperature-coefficient of electrical resistance of the line in environment temperature T, △ R2It is that the resistance for starting first line of induction after the heating power supply becomes
Change, △ R3It is the resistance variations for starting second line of induction after the heating power supply, SsIt is line of induction material in environment temperature T
When Seebeck coefficient；
The electrical conductivity is determined based on following equation：σ=l42/R42A4, wherein, under the l42 testing samples
The length of section, R42It is the resistance of the hypomere of the testing sample, A4It is the cross-sectional area of the testing sample.
In the second aspect of the present invention, the present invention proposes one kind and detects one-dimensional micro-nanometer material thermoelectricity using the said equipment
The method of performance parameter.
Embodiments in accordance with the present invention, methods described includes：
(1) testing sample is overlapped in first overlapped points, the second overlapped points and the 3rd overlapped points；
(2) under vacuum, start the heating power supply, the heater wire is heated；
(3) the first electrical parameters detection component, the second electrical parameters detection component and the 3rd electrical parameter are utilized
Detection components obtain electrical parameter；
(4) based on the electrical parameter obtained in step (3), the thermoelectricity capability ginseng of the one-dimensional micro-nanometer material is determined
Number,
Wherein, the thermoelectricity capability parameter of the testing sample include thermal conductivity, Seebeck coefficient and electrical conductivity at least it
One；
The electrical conductivity is determined based on following equation：
λ=λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2),
Wherein, λ3It is the thermal conductivity of second line of induction, A3It is the cross-sectional area of second line of induction, l3It is described
The length of second line of induction, l42It is the length of the hypomere of the testing sample, △ R3It is to start described the after the heating power supply
The resistance variations of two lines of induction, A4It is the cross-sectional area of the testing sample, l31It is the first end of second line of induction
With the length between the 3rd overlapped points, l32It is between second end of second line of induction and the 3rd overlapped points
Length, △ R2It is the resistance variations for starting first line of induction after the heating power supply, R03It is second line of induction 0
Resistance at a temperature of DEG C, βT3It is temperature-coefficient of electrical resistance of second line of induction in environment temperature T, △ R3It is to start described add
The resistance variations of second line of induction, R after thermoelectric generator02It is resistance of first line of induction at a temperature of 0 DEG C, βT2It is institute
State temperature-coefficient of electrical resistance of first line of induction in environment temperature T；
The Seebeck coefficient is determined based on following equation：S=VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02
βT2)+Ss, wherein, VSBe the testing sample hypomere, the second overlapped points of first line of induction and the second end between and institute
State the direct current Seebeck potential between the 3rd overlapped points of second line of induction and the second end, R02It is first line of induction at 0 DEG C
At a temperature of resistance, βT2It is temperature-coefficient of electrical resistance of first line of induction in environment temperature T, R03It is second sensing
Resistance of the line at a temperature of 0 DEG C, βT3It is temperature-coefficient of electrical resistance of second line of induction in environment temperature T, △ R2It is to start
The resistance variations of first line of induction, △ R after the heating power supply3It is to start second line of induction after the heating power supply
Resistance variations, SsIt is Seebeck coefficient of the line of induction material in environment temperature T；
The electrical conductivity is determined based on following equation：σ=l42/R42A4, wherein, l42Under the testing sample
The length of section, R42It is the resistance of the hypomere of the testing sample, A4It is the cross-sectional area of the testing sample.
Inventor is it was unexpectedly observed that using the detection method of the embodiment of the present invention, be adapted to detect for one-dimensional micro-nanometer material
Thermoelectricity capability parameter, by the fire end and test lead set respectively, influence that can effectively by thermal contact resistance to test result
Eliminate, so as to significantly increase the precision of the testing result of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter；And carrying out one
On the basis of secondary sample overlap joint, the thermal conductivity, electrical conductivity and Seebeck of testing sample can be sequentially obtained by changing measuring circuit
Coefficient, you can comprehensive characterization is carried out to the thermoelectricity capability of testing sample, with very high integrated level；And the detection method has
Measurement accuracy is high, be easily achieved and the low advantage of testing cost.It will be appreciated to those of skill in the art that above for detection
Feature and advantage described by the equipment of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter, are still applied to the detection one-dimensional micro-nanometer material
Expect the method for thermoelectricity capability parameter, will not be repeated here.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become from description of the accompanying drawings below to embodiment is combined
Substantially and be readily appreciated that, wherein：
Fig. 1 is the structural representation of the detection device of one embodiment of the invention；
Fig. 2 is the use schematic diagram of the detection device of one embodiment of the invention；
Fig. 3 is the circuit diagram of the test testing sample thermal conductivity of one embodiment of the invention；
Fig. 4 is the circuit diagram of the test testing sample Seebeck coefficient of one embodiment of the invention；
Fig. 5 is the circuit diagram of the test testing sample electrical conductivity of one embodiment of the invention；
Fig. 6 is the schematic flow sheet of the detection method of one embodiment of the invention；
Fig. 7 is the schematic flow sheet for obtaining electrical parameter in the detection method of one embodiment of the invention；
Fig. 8 is the thermal conductivity test result figure of the testing sample of embodiments of the invention 1；
Fig. 9 is the Seebeck coefficient test result figure of the testing sample of embodiments of the invention 1；
Figure 10 is the electrical conductivity test result figure of the testing sample of embodiments of the invention 1.
Reference
The first paragraph of 11 heater wires
The second segment of 12 heater wires
The first paragraph of 21 first lines of induction
The second segment of 22 first lines of induction
The first paragraph of 31 second lines of induction
The second segment of 32 second lines of induction
The epimere of 41 testing samples
The hypomere of 42 testing samples
51 first is heat sink
52 second is heat sink
53 the 3rd is heat sink
54 the 4th is heat sink
55 the 5th is heat sink
56 the 6th is heat sink
1 first overlapped points
2 second overlapped points
3 the 3rd overlapped points
4 the 3rd power supplys
5 heating power supplies
6 first power supplys
7 second sources
8 first resistors
9 second resistances
10 first voltage tables
11 second voltage tables
12 the 4th voltmeters
13 tertiary voltage tables
14 3rd resistors
15 the 5th voltmeters
16 the 6th voltmeters
Embodiment
Embodiments of the invention, those skilled in the art are described below in detail it will be appreciated that example below is intended to be used to solve
The present invention is released, and is not construed as limitation of the present invention.Unless stated otherwise, it is not expressly recited in embodiment below specific
Technology or condition, those skilled in the art can be according to conventional technology in the art or condition or according to product description
Carry out.Agents useful for same or the unreceipted production firm person of instrument, are the conventional products that can be bought by city.
In one aspect of the invention, the present invention proposes a kind of for detecting one-dimensional micro-nanometer conducting material thermoelectricity performance parameter
Equipment.Reference picture 1~5, the detection device of the present invention is described in detail.It should be noted that herein is " to be measured
Sample " is one-dimensional micro-nanometer material sample.
Embodiments in accordance with the present invention, with reference to Fig. 1, the detection device includes：Heater wire, first line of induction be arrangeding in parallel
With second line of induction.Wherein, the first end of heater wire is connected with first heat sink 51, the second end of heater wire and the second heat sink 52 phase
Even, thus heater wire include be connected with first heat sink 51 first paragraph 11, with the second heat sink 52 second segment 12 being connected；First sense
Line is answered to be flushed with the two ends of heater wire, and first line of induction is set in parallel in the lower section of heater wire, and first line of induction
First end is connected with the 3rd heat sink 53, and the second end of first line of induction is connected with the 4th heat sink 54, so that first line of induction includes
First paragraph 21 and second segment 22；And second line of induction is flushed with the two ends of first line of induction, and second line of induction be arranged in parallel
In the lower section of first line of induction, and the first end of second line of induction is connected with the 5th heat sink 55, the second end of second line of induction
It is connected with the 6th heat sink 56, so that second line of induction includes first paragraph 31 and second segment 32.
Inventor is it was unexpectedly observed that using three p-wires respectively as heater wire and the line of induction, with reference to Fig. 2, will can treat
Test sample product are vertically overlapped on this three p-wires, sequentially form from top to bottom the first overlapped points 1, the second overlapped points 2 and
3rd overlapped points 3.Wherein, the first overlapped points 1 are arranged on heater wire, and the second overlapped points 2 are arranged on first line of induction, and the
Three overlapped points 3 are arranged on second line of induction.Taken in this way, the first of temperature end can be formed to testing sample heating by heater wire
Contact 1, two p-wires are as the stable state temperature rise at the overlapped points 2 and 3 of line of induction acquisition testing sample in addition, while can also survey
The direct current Seebeck voltage of the hypomere 42 between the overlapped points 2 and 3 of the line of induction and testing sample is measured, testing sample is further can obtain
Thermal conductivity and Seebeck coefficient；Four-wire method is recycled to can obtain the electrical conductivity of testing sample, and then the heat of comprehensive characterization material
Electrical property.
Embodiments in accordance with the present invention, the specific material of heater wire is not particularly limited, as long as the material of the heater wire
Electric current and heat can be effectively conducted, those skilled in the art can be selected according to the thermoelectricity capability of actual testing sample
Select.In some embodiments of the invention, the heater wire can be formed by platinum, in this way, the electricity of the heater wire using alloy platinum material
Conductance is higher and service life is long, more preferable to the heating effect of testing sample.Embodiments in accordance with the present invention, heater wire it is specific
Size, such as diameter and length, are not also particularly limited, as long as the heater wire of the size can effectively heat testing sample i.e.
Can, those skilled in the art can be selected according to the specific size of testing sample, will not be repeated here.
Embodiments in accordance with the present invention, the specific material of first line of induction is not particularly limited, as long as first sensing
The material of line can be effectively used to the thermoelectricity capability of measurement testing sample, and those skilled in the art can be according to the to be measured of reality
The thermoelectricity capability of sample is selected.In some embodiments of the invention, first line of induction can be formed by platinum, such as
This, it is higher and service life is long using the electrical conductivity of first line of induction of alloy platinum material, to the measurement knot of the conductance of testing sample
Fruit influence is smaller.Embodiments in accordance with the present invention, the specific size of first line of induction, such as diameter and length, also not by special
Limitation, as long as first line of induction of the size can be effectively used to measurement testing sample thermoelectricity capability, this area skill
Art personnel can be selected according to the specific size of actual testing sample, will not be repeated here.
Embodiments in accordance with the present invention, the specific material of the specific material of second line of induction is not particularly limited, as long as
The material of second line of induction can be effectively used to the thermoelectricity capability of measurement testing sample, and those skilled in the art can basis
The thermoelectricity capability of actual testing sample is selected.In some embodiments of the invention, second line of induction can be by platinum
Formed, in this way, it is higher and service life is long using the electrical conductivity of second line of induction of alloy platinum material, to the conductance of testing sample
Measurement result influence it is smaller.Embodiments in accordance with the present invention, the specific size of second line of induction, such as diameter and length,
It is not particularly limited, as long as second line of induction of the size can be effectively used to the thermoelectricity capability of measurement testing sample,
Those skilled in the art can be selected according to the specific size of actual testing sample, will not be repeated here.
Embodiments in accordance with the present invention, with reference to Fig. 3, the detection device can further comprise heating power supply 5, the heating power supply
5 are respectively connected with the first heat sink 51 of the two ends of heater wire and second heat sink 52, for being heated to heater wire.In this way, can
Heater wire is separated with the line of induction, influence of the thermal contact resistance to measurement result is reduced.Embodiments in accordance with the present invention, heating electricity
The specific species in source 5 is not particularly limited, the heating power supply of any Known Species in the art, as long as the power supply can be right
Heater wire is heated, and will not be repeated here.
Embodiments in accordance with the present invention, the detection device can further comprise the first electrical parameters detection component, the first electricity ginseng
Number detection components are connected with the two ends of first line of induction, are detected for the electrical parameter to first line of induction.In this way, passing through
One electrical parameters detection component, can measure the electrical parameter of first line of induction, the temperature at the second overlapped points 2 for calculating testing sample
Degree.
Embodiments in accordance with the present invention, with reference to Fig. 3, the first electrical parameters detection component may include：First power supply 6, first
Resistance 8, first voltage table 10 and second voltage table 11.Wherein, first resistor 8, the first power supply 6 and first line of induction are series connection
Electrical circuit is constituted, and first voltage table 10 is in parallel with first resistor 8, and the sensing line parallel of second voltage table 11 and first.Such as
This, by measuring the magnitude of voltage of the line of induction of first resistor 8 and first respectively, further according to first resistor in series circuit 8
Know that resistance value can calculate the resistance value of first line of induction, can further calculate the temperature value of the second overlapped points 2.
Embodiments in accordance with the present invention, the detection device can further comprise the second electrical parameters detection component, the second electricity ginseng
Number detection components are connected with the two ends of second line of induction, are detected for the electrical parameter to second line of induction.In this way, passing through
Two electrical parameters detection components, can measure the electrical parameter of second line of induction, the temperature at the 3rd overlapped points 3 for calculating testing sample
Angle value.
Embodiments in accordance with the present invention, with reference to Fig. 3, the second electrical parameters detection component may include：Second source 7, second
Resistance 9, the voltmeter 12 of tertiary voltage table 13 and the 4th.Wherein, second resistance 9, the line of induction of second source 7 and second series connection structure
Into electrical circuit, and tertiary voltage table 13 is in parallel with second resistance 9, and the 4th voltmeter 12 and the second sensing line parallel.In this way, logical
The magnitude of voltage for measuring the line of induction of second resistance 9 and second respectively is crossed, further according to the known resistance of second resistance in series circuit 9
Value can calculate the resistance value of second line of induction, can further calculate the temperature value of the 3rd overlapped points 3.
Embodiments in accordance with the present invention, the detection device can further comprise the 3rd electrical parameters detection component, the 3rd electricity ginseng
Number detection components and the two ends of first line of induction, second line of induction are respectively connected with, for detecting the second overlapped points 2 and the 3rd overlap joint
Electrical parameter between point 3.In this way, by the second electrical parameters detection component, the electrical parameter of the hypomere 42 of testing sample can be measured, use
In the electrical conductivity for calculating testing sample.
Embodiments in accordance with the present invention, with reference to Fig. 5, the 3rd electrical parameters detection component may include：3rd power supply the 4, the 3rd
Resistance 14, the 5th voltmeter 15 and the 6th voltmeter 16.Wherein, 3rd resistor 14, second source 4 and testing sample are located at the
Hypomere 42 between two overlapped points 2 and the 3rd overlapped points 3 constitutes electrical circuit, and the 5th voltmeter 15 is in parallel with the 3rd electric 14 resistances,
And the 6th voltmeter 16 it is in parallel with the hypomere 42 of testing sample.In this way, by measuring 3rd resistor 14 and testing sample respectively
The magnitude of voltage of hypomere 42, further according to the known value of 3rd resistor in series circuit 14, can calculate testing sample hypomere 42
Resistance value, can further calculate the electrical conductivity of testing sample.
Embodiments in accordance with the present invention, with reference to Fig. 4, the 6th voltmeter 16 of the 3rd electrical parameters detection component can be independent
For detecting another electrical parameter that testing sample is located between the second overlapped points 2 and the 3rd overlapped points 3.In this way, in heating electricity
Under the work in source 5, can directly it be measured between the second overlapped points 2 and the 3rd overlapped points 3 individually with the 6th voltmeter 16
The voltage difference at the thermocouple two ends of testing sample and the formation of first, second line of induction, can be formed as testing sample with the line of induction
Thermocouple direct current Seebeck potential.
Embodiments in accordance with the present invention, the detection device can further comprise computation module, and the computation module is respectively with
One electrical parameters detection component, the second electrical parameters detection component and the 3rd electrical parameters detection component are connected, for determining testing sample
Thermoelectricity capability parameter.As long as in this way, connecting and measuring the electrical parameter of testing sample by substep, you can pass through computation module again
Data processing, directly obtain the test result of the testing sample thermoelectricity capability parameter.
Embodiments in accordance with the present invention, the thermoelectricity capability parameter of testing sample includes thermal conductivity, Seebeck coefficient and conductance
At least one of rate.
In some embodiments of the invention, the thermal conductivity is determined based on following equation：
λ=λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2),
Wherein, λ3It is the thermal conductivity of second line of induction, A3It is the cross-sectional area of second line of induction, l3It is second line of induction
Length, l42It is the length of the hypomere 42 of testing sample, △ R3It is the resistance variations for starting second line of induction after heating power supply 5, A4
It is the cross-sectional area of testing sample, l31It is the length between the first end of second line of induction and the 3rd overlapped points 3, l32It is second
Length between second end of the line of induction and the 3rd overlapped points 3, △ R2It is that the resistance for starting first line of induction after heating power supply 5 becomes
Change, R03It is resistance of second line of induction at a temperature of 0 DEG C, βT3It is resistance temperature system of second line of induction in environment temperature T
Number, △ R3It is the resistance variations for starting second line of induction after heating power supply 5, R02It is resistance of first line of induction at a temperature of 0 DEG C,
βT2It is temperature-coefficient of electrical resistance of first line of induction in environment temperature T.
In some embodiments of the invention, the Seebeck coefficient is determined based on following equation：
S=VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02βT2)+Ss,
Wherein, VSIt is that the hypomere 42 of testing sample and the first line of induction second segment 22 and the second line of induction second segment 32 are formed
Thermocouple direct current Seebeck potential, R02It is resistance of first line of induction at a temperature of 0 DEG C, βT2It is first line of induction in ring
Temperature-coefficient of electrical resistance during the temperature T of border, R03It is resistance of second line of induction at a temperature of 0 DEG C, βT3It is second line of induction in environment
Temperature-coefficient of electrical resistance during temperature T, △ R2It is the resistance variations for starting first line of induction after heating power supply, △ R3It is to start heating
The resistance variations of second line of induction, S after power supplysIt is Seebeck coefficient of the line of induction material in environment temperature T.
In some embodiments of the invention, the electrical conductivity is determined based on following equation：σ=l42/R42A4, wherein,
l42It is the length of the hypomere of testing sample, R42It is the resistance of the hypomere of testing sample, A4It is the cross-sectional area of testing sample.
In summary, embodiments in accordance with the present invention, the present invention proposes a kind of detection one-dimensional micro-nanometer conducting material thermoelectricity
The equipment of energy parameter, can be detected effective for the thermoelectricity capability parameter of one-dimensional micro-nanometer material, can be by fire end and survey
End separation is tried, so that error caused by contact thermal resistance be greatly reduced, the precision of measurement is improved；And carrying out a sample
On the basis of overlap joint, a variety of thermoelectricity capability parameters of testing sample can be sequentially obtained by changing measuring circuit, you can be measured
The thermoelectricity capability of sample carries out comprehensive characterization, with very high integrated level.
In another aspect of the present invention, the present invention proposes a kind of hot using the said equipment detection one-dimensional micro-nanometer material
The method of unit for electrical property parameters.Reference picture 2~7, the detection method to the present invention is described in detail.According to the implementation of the present invention
Example, with reference to Fig. 6, the detection method includes：
S100：Testing sample is overlapped in the first overlapped points, the second overlapped points and the 3rd overlapped points.
In this step, with reference to Fig. 2, then one-dimensional micro-nanometer material to be measured (also referred to as testing sample) vertically overlapped
On heater wire, first line of induction and second line of induction, sequentially form from top to bottom the first overlapped points 1, the second overlapped points 2 and
3rd overlapped points 3.In this way, heater wire can effectively be separated with the line of induction using trilinear method, and using the test of double lines of induction
Method, and then eliminate influence of the contact resistance to test result.
Embodiments in accordance with the present invention, particular location of first overlapped points 1 on heater wire, the second overlapped points 2 are first
The particular location of the particular location of the line of induction and the 3rd overlapped points 3 on second line of induction is not particularly limited, as long as
The position of above three overlapped points will not produce influence to the test result precision of testing sample, and those skilled in the art can
Set according to actual test case.In some embodiments of the invention, the first overlapped points 1 can be arranged on heater wire
Point midway, the second overlapped points 2 can be arranged on the point midway of first line of induction, and the 3rd overlapped points 3 can be set
In the point midway of second line of induction.In this way, testing sample is placed on to the position of middle, symmetrical three detection lines
Symmetry, is conducive to treating the accuracy for the thermoelectricity capability parameter for surveying sample detection.
Embodiments in accordance with the present invention, the specific overlap joint of testing sample and heater wire, first line of induction and second line of induction
Mode is not particularly limited, as long as the overlapping mode can make the first overlapped points 1, the second overlapped points 2 and the 3rd overlapped points 3
Heat is effectively transmitted, those skilled in the art can be selected according to the specific material of testing sample and three detection lines
Select.In some embodiments of the invention, can be logical between testing sample and heater wire, first line of induction and second line of induction
The mode for crossing elargol splicing is overlapped.In this way, the first overlapped points 1, second of the overlapping mode formation being glued using elargol are overlapped
Point 2 and the 3rd overlapped points 3, the stability of these three overlapped points is higher and thermal contact resistance is very low, inspection that will not be to testing sample
Survey result and produce obvious influence.
S200：Under vacuum, start heating power supply, heater wire is heated.
In this step, the detection means for being overlapped with testing sample is subjected to vacuumize process, then referring to Fig. 3, started
Heating power supply 5 is simultaneously heated to heater wire, so that the first overlapped points 1 on heater wire overlap joint turn into temperature end, and is passed through
The heat transfer of testing sample forms different temperature drops in the second overlapped points 2 and the 3rd overlapped points 3.
Embodiments in accordance with the present invention, the actual conditions of the application of vacuum is not particularly limited, as long as the vacuum condition
The influence that free convection can be produced to testing result can be effectively eliminated, those skilled in the art can be according to testing sample
Material and actually detected process are selected and adjusted.In some embodiments of the invention, vacuum can be 10-3Pa with
Under, in this way, the influence of cross-ventilation heat exchange can be reduced using above-mentioned condition of high vacuum degree., can profit in some specific examples
Mode is vacuumized with the two-stage of vavuum pump and molecular pump and realizes above-mentioned condition of high vacuum degree in this way, utilizing above-mentioned apparatus and method energy
More effectively reduce the influence of cross-ventilation heat exchange.
S300：Obtained using the first electrical parameters detection component, the second electrical parameters detection component and the 3rd electrical parameters detection component
Take electrical parameter.
In this step, with reference to Fig. 3~5, under conditions of heating, joined using the first electrical parameters detection component, the second electricity
Number detection components and the 3rd electrical parameters detection component, it may include following three step thermal conductivity successively to testing sample, Sai Bei
The associated electrical parameter of gram coefficient and electrical conductivity is measured, and specific steps refer to Fig. 7.
S310：Using the first electrical parameters detection component and the second electrical parameters detection component, the associated electrical of thermal conductivity is obtained
Parameter.
In this step, with reference to Fig. 3, the first electrical parameters detection component is connected with first line of induction, wherein, the first electricity ginseng
First resistor 8, the first power supply 6 and first line of induction of number detection components are electrical circuits in series, and first voltage table 10
It is in parallel with first resistor 8, and the sensing line parallel of second voltage table 11 and first.In this way, by measuring the He of first resistor 8 respectively
The magnitude of voltage of first line of induction, the known value further according to first resistor in series circuit 8 can calculate first line of induction
Resistance value, can further calculate the temperature value of the second overlapped points 2.
Embodiments in accordance with the present invention, the associated electrical parameter of thermal conductivity can include：The resistance value of first resistor 8,
The magnitude of voltage of one voltmeter 10 and the magnitude of voltage of second voltage table 11.In this way, first line of induction can be obtained to be measured by calculating
The resistance value of sample in a heated condition, further according to the initial resistivity value of first line of induction, can further calculate startup heating
The increased resistance value △ R of first line of induction after power supply 52。
In this step, with reference to Fig. 3, the second electrical parameters detection component can be connected with second line of induction simultaneously, wherein, the
The second resistance 9 of two electrical parameters detection components, the line of induction electrical circuit in series of second source 7 and second, and tertiary voltage table
13 is in parallel with second resistance 9, and the 4th voltmeter 12 and the second sensing line parallel.In this way, by measuring second resistance 9 respectively
With the magnitude of voltage of second line of induction, the known value further according to second resistance in series circuit 9 can calculate second line of induction
Resistance value, can further calculate the temperature value of the 3rd overlapped points 3.
Embodiments in accordance with the present invention, the associated electrical parameter of thermal conductivity can further include：The electricity of second resistance 9
The magnitude of voltage of resistance, the magnitude of voltage of tertiary voltage table 13 and the 4th voltmeter 12.In this way, second line of induction can be obtained by calculating
In the resistance value of testing sample in a heated condition, further according to the initial resistivity value of first line of induction, it can further calculate and open
The increased resistance value △ R of second line of induction after dynamic heating power supply 53。
S320：Using the 3rd electrical parameters detection component, the associated electrical parameter of Seebeck coefficient is obtained.
In this step, with reference to Fig. 4, the 6th voltmeter 16 of the 3rd electrical parameters detection component is individually used for detection to be measured
Sample is located at the associated electrical parameter of the Seebeck coefficient between the second overlapped points 2 and the 3rd overlapped points 3.In this way, in heating electricity
Under the heating in source 5, can directly it be measured individually with the 6th voltmeter 16 to be measured between second overlapped points 2 and the 3rd overlapped points 3
Sample and the voltage difference at the thermocouple two ends of line of induction formation, can be used as testing sample and the direct current of the thermocouple of line of induction formation
Seebeck potential.
S330：Using the 3rd electrical parameters detection component, the associated electrical parameter of electrical conductivity is obtained.
In this step, with reference to Fig. 5, by the 3rd electrical parameters detection component and first line of induction, the two ends of second line of induction
It is respectively connected with, for detecting the electrical parameter between the second overlapped points 2 and the 3rd overlapped points 3.Wherein, the electricity of 3rd resistor 14, second
The hypomere 42 that source 4 and testing sample are located between the second overlapped points 2 and the 3rd overlapped points 3 constitutes electrical circuit, and the 5th voltmeter
15 is in parallel with the 3rd electric 14 resistances, and the 6th voltmeter 16 is in parallel with the hypomere 42 of testing sample.In this way, by measuring respectively
The magnitude of voltage of three resistance 14 and testing sample hypomere 42, further according to the known value of 3rd resistor in series circuit 14, can be counted
The resistance value of testing sample hypomere 42 is calculated, the electrical conductivity of testing sample can be further calculated.
Embodiments in accordance with the present invention, the associated electrical parameter of electrical conductivity may include：The resistance value of 3rd resistor 14, the 6th
The magnitude of voltage of the magnitude of voltage of voltmeter 16 and the 6th voltmeter 16.In this way, the electricity of testing sample hypomere 42 can be obtained by calculating
Resistance.
S400：The electrical parameter obtained based on step S300, determines the thermoelectricity capability parameter of one-dimensional micro-nanometer material.
In this step, the various related electrical parameters obtained according to step S300, the calculating mould of above-mentioned detection device
Block can calculate the thermoelectricity capability parameter of one-dimensional micro-nanometer material.Embodiments in accordance with the present invention, thermoelectricity capability parameter can be wrapped
Include at least one of thermal conductivity, Seebeck coefficient and electrical conductivity.
In some embodiments of the invention, the electricity for starting first line of induction after heating power supply obtained according to step S310
Resistive △ R2With the resistance variations △ R for starting second line of induction after heating power supply3, and carry out survey in advance before thermoelectricity capability detection
The length l of the hypomere of the testing sample of amount42, cross-sectional area A4And environment temperature T, then the computing module of detection means be
The thermal conductivity of testing sample is can determine that based on following equation：
λ=λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2)；
Wherein, following parameters are all known quantities：λ3It is the thermal conductivity of second line of induction, A3It is the cross section of second line of induction
Product, l3The length of second line of induction, l31It is the length between the first end of second line of induction and the 3rd overlapped points, l32It is
Length between second end of two lines of induction and the 3rd overlapped points, R03It is resistance of second line of induction at a temperature of 0 DEG C, βT3It is
Temperature-coefficient of electrical resistance of second line of induction in environment temperature T, R02It is resistance of first line of induction at a temperature of 0 DEG C, βT2It is
Temperature-coefficient of electrical resistance of one line of induction in environment temperature T.
In some embodiments of the invention, the electricity for starting first line of induction after heating power supply obtained according to step S310
Resistive △ R2With the resistance variations △ R for starting second line of induction after heating power supply3, and the testing sample that step S320 is obtained
With the direct current Seebeck potential V of the thermocouple of line of induction formationS, and the environment temperature measured in advance before progress thermoelectricity capability detection
T, then the computing module of detection means is to can determine that testing sample and the thermocouple of line of induction formation based on following equation
Seebeck coefficient：
S*=VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02βT2)；
Wherein, following parameters are all known quantities：R02It is resistance of first line of induction at a temperature of 0 DEG C, βT2It is the first sensing
Temperature-coefficient of electrical resistance of the line in environment temperature T, R03It is resistance of second line of induction at a temperature of 0 DEG C, βT3It is second line of induction
Temperature-coefficient of electrical resistance in environment temperature T.The Seebeck coefficient of testing sample can be further determined by following equation：
S=S*+Ss；
Wherein, following parameters are known quantities：SsIt is Seebeck coefficient of the line of induction material in environment temperature T.
In some embodiments of the invention, according to the resistance R of the hypomere of the step S330 testing samples obtained42, and enter
The length l of the hypomere of the testing sample measured in advance before the detection of row thermoelectricity capability42And cross-sectional area A4, the then meter of detection means
It is the electrical conductivity that testing sample is can determine that based on following equation to calculate module：
σ=l42/R42A4。
In summary, embodiments in accordance with the present invention, the present invention proposes a kind of detection method, is adapted to detect for one-dimensional micro-nano
The thermoelectricity capability parameter of rice material, by the fire end and test lead set respectively, effectively can tie thermal contact resistance to test
The influence of fruit is eliminated, so as to significantly increase the precision of the testing result of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter；And
On the basis of a sample overlap joint is carried out, thermal conductivity, the electrical conductivity of testing sample can be sequentially obtained by changing measuring circuit
And Seebeck coefficient, you can comprehensive characterization is carried out to the thermoelectricity capability of testing sample, with very high integrated level；And the detection
Method has measurement accuracy height, is easily achieved and the low advantage of testing cost.It will be appreciated to those of skill in the art that above
For detecting the feature and advantage described by the equipment of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter, the detection is still applied to one-dimensional
The method of micro Nano material thermoelectricity capability parameter, will not be repeated here.
Below with reference to specific embodiment, present invention is described, it is necessary to which explanation, these embodiments are only descriptive
, without limiting the present invention in any way.
Embodiment 1
In this embodiment, using detection means as shown in Figure 1, and according to Fig. 2 overlapping mode connection on treat test sample
Product, carry out the detection of the thermoelectricity capability parameter of testing sample.
Specifically, in detection means shown in Fig. 1, three p-wires are parallel suspension overlap joints, its end points is connected to
Heat sink 51, heat sink 52, heat sink 53, heat sink 54, heat sink 55 and heat sink 56, vertically suspension is overlapped in p-wire to testing sample
On, overlapped points 1 are connected to heater wire respectively, overlapped points 2 are connected to first line of induction, are connected to overlapped points 3 with second line of induction, are taken
P-wire and testing sample are divided into p-wire 11, p-wire 12, p-wire 21, p-wire by contact 1, overlapped points 2 and overlapped points 3
22nd, p-wire 31, p-wire 32,42 8 parts of testing sample epimere 41 and testing sample hypomere.
In specific detecting step, experimental provision need to be placed in vacuum constant temperature environment, and (vacuum is 10-3Below Pa) in, lead to straight
The temperature end that electrical heating heater wire produces testing sample is flowed, partial heat conducts along testing sample, by p-wire 21, p-wire
22nd, to be transmitted to heat sink, heat sink temperature consistent with environment temperature for p-wire 31 and p-wire 32, environment temperature by temperature controller detection and
Control, control accuracy ± 0.1K；By first line of induction and second line of induction, then measure its resistance variations and determine the He of overlapped points 2
Temperature change at overlapped points 3.
In test process, first line of induction and second line of induction are obtained in the case of obstructed electrical heating first in environment
At a temperature of resistance, direct current is then led on heater wire, because joule heating effect can produce temperature end, partial heat is via treating
Test sample product be delivered to by p-wire 21, p-wire 22, p-wire 31 and p-wire 32 it is heat sink, after reaching steady state, above-mentioned
Linear temperature distribution is produced on four sections of p-wires, and produces between overlapped points 2 and overlapped points 3 steady state temperature difference, the electricity of p-wire
Resistance has good corresponding relation with temperature, can obtain temperature rise at overlapped points 2 and overlapped points 3 by measuring its resistance, using taking
The hot physical property of hot-fluid relation and second line of induction at contact 3 can determine that the thermal conductivity of testing sample；For thermoelectric material, overlap joint
Steady state temperature difference between point 2 and overlapped points 3 can produce direct current Seebeck voltage, and directly being obtained using high accuracy number voltmeter should
Voltage signal, determines steady state temperature difference using first line of induction and second line of induction, can obtain the Seebeck coefficient of testing sample；
In the case of not heating, change circuit and p-wire 21, p-wire 22, p-wire 31 and p-wire 32 are considered as wire, can measure
The resistance of testing sample and then obtain its electrical conductivity.Due to this process employs three p-wires respectively as heater wire and sensing
Line is measured, therefore is named as trilinear method.
Wherein, with reference to Fig. 3, thermal conductivity measuring circuit constitutes closed-loop path by dc source 5 and heater wire, passes through electrical heating
Produce heat；Dc source 6, the line of induction of measuring resistance 8 and first composition closed-loop path, pass through the He of high accuracy number voltmeter 10
11 separately detect the voltage at the line of induction two ends of measuring resistance 8 and first, further obtain the resistance of first line of induction；Dc source
7th, the line of induction of measuring resistance 9 and second composition closed-loop path, standard electric is separately detected by high accuracy number voltmeter 12 and 13
The voltage at the line of induction two ends of resistance 9 and second, further obtains the resistance of second line of induction.
Wherein, with reference to Fig. 4, during thermal measurement Seebeck coefficient, by high accuracy number voltmeter 10, p-wire 22, test sample is treated
Product hypomere 42 and the composition of p-wire 32 closed-loop path, in the state of the electrified regulation line of dc source 5, measurement obtains overlapped points 2
The direct current Seebeck voltage that the thermocouple of measured material and line of induction formation between overlapped points 3 is produced.
Wherein, with reference to Fig. 5, electrical conductivity measurement circuit is by dc source 6, p-wire 31, testing sample hypomere 42, p-wire
21 and measuring resistance 8 be composed in series closed-loop path, obtained using high accuracy number voltmeter 10 via p-wire 22 and p-wire 32
The both end voltage of testing sample hypomere 42 is obtained, the both end voltage of measuring resistance 8 is obtained by high accuracy number voltmeter 11, calculating is treated
The resistance of test sample product hypomere 42 and then obtain its electrical conductivity.
Further according to formula：λ=λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2) determine testing sample
Thermal conductivity；According to formula：S*=VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02βT2) determine that testing sample is formed with the line of induction
Thermocouple Seebeck coefficient, further according to formula：S=S*+SsDetermine the Seebeck coefficient of testing sample；According to formula：
σ=l42/R42A4Determine the electrical conductivity of testing sample.
Wherein, λ3It is the thermal conductivity of second line of induction, A3It is the cross-sectional area of second line of induction, A4It is the horizontal stroke of testing sample
Sectional area, l3It is the length of second line of induction, l42It is the length of testing sample hypomere 42, l31It is the length of 31 sections of p-wire, l32
It is the length of 32 sections of p-wire, R02It is resistance of first line of induction at a temperature of 0 DEG C (273.15K), R03It is that second line of induction exists
Resistance at a temperature of 0 DEG C (273.15K), βT2It is temperature-coefficient of electrical resistance of first line of induction in environment temperature T, βT3It is second
Temperature-coefficient of electrical resistance of the line of induction in environment temperature T, △ R2It is switched on the resistance variations of first line of induction after heating, △ R3It is
The resistance variations of second line of induction, V after electrified regulationSIt is the direct current of testing sample hypomere 42 and the thermocouple of line of induction formation
Seebeck potential, SsIt is the Seebeck coefficient value of first, second line of induction, R42It is the resistance of testing sample hypomere 42.
The testing result of the thermal conductivity of the embodiment, as shown in Figure 8.As can be seen from Figure 8, measurement is obtained in 200-300K temperature
The thermal conductivity of the alloy of measured material platinum rhodium 13 is in 25.3W m in the range of degree-1K-1To 38.4W m-1K-1, measurement result has on the whole
There is higher precision, uncertainty of measurement is 8%..
The testing result of the Seebeck coefficient of the embodiment, as shown in Figure 9.It can be seen in fig. 9 that measurement is obtained in 200-
The Seebeck coefficient of the alloy of measured material platinum rhodium 13 and the thermocouple of line of induction material platinum formation is from 3.1 μ V in 300K temperature ranges
K-1Increase to 6.3 μ V K-1, uncertainty of measurement is 5%；Measured material platinum rhodium 13 is obtained after the influence for eliminating line of induction platinum to close
The Seebeck coefficient of gold is on the whole from 1.6 μ V K-1Reduce to 1.1 μ V K-1, maximum absolute error is 0.4 μ V K-1, with very high
Resolution ratio.
The electrical conductivity testing result of the embodiment, as shown in Figure 10.As can be seen from Figure 10, measurement is obtained in 200-300K temperature
The electrical conductivity of the alloy of measured material platinum rhodium 13 is from 3.9 × 10 in the range of degree6S m-1It is reduced to 3.3 × 106S m-1, measure uncertain
Spend for 3%.
Compared with prior art, fire end is separated with test lead by the present invention, so at overlapped points 2 and overlapped points 3, heat
Amount is to be transmitted to p-wire, the error offset direction phase that thermal contact resistance is produced at overlapped points 2 and overlapped points 3 by testing sample
Together, by compensating action, the actual temperature difference of overlapped points 2 and overlapped points 3 and overlapped points 2 and overlapped points 3 on the line of induction on p-wire
The measurement temperature difference difference, i.e. error caused by thermal contact resistance greatly reduced, and measurement accuracy is improved；Carrying out a sample
On the basis of overlap joint, the thermal conductivity, electrical conductivity and Seebeck coefficient of testing sample can be sequentially obtained by changing measuring circuit, can
Comprehensive characterization is carried out to the thermoelectricity capability of testing sample, with very high integrated level.The present invention has measurement accuracy height, is easy to real
The existing and low advantage of testing cost.
In the description of the invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", " outer ", " up time
The orientation or position relationship of the instruction such as pin ", " counterclockwise ", " axial direction ", " radial direction ", " circumference " be based on orientation shown in the drawings or
Position relationship, is for only for ease of the description present invention and simplifies description, rather than indicate or imply that the device or element of meaning must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In the description of the invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ",
Terms such as " fixations " should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integrally；Can be with
It is mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected to by intermediary, can be two
The connection of individual element internal or the interaction relationship of two elements.For the ordinary skill in the art, Ke Yigen
Understand the concrete meaning of above-mentioned term in the present invention according to concrete condition.
In addition, term " first ", " second ", " the 3rd " etc. are only used for describing purpose, and it is not intended that indicating or implying
Relative importance or the implicit quantity for indicating indicated technical characteristic.Thus, " first ", " second ", " the 3rd " are defined
Deng feature can express or implicitly include at least one this feature.In the description of the invention, " multiple " are meant that
At least two, such as two, three etc., unless otherwise specifically defined.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means to combine specific features, structure, material or the spy that the embodiment or example are described
Point is contained at least one embodiment of the present invention or example.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.Moreover, specific features, structure, material or the feature of description can be with office
Combined in an appropriate manner in one or more embodiments or example.In addition, in the case of not conflicting, the skill of this area
Art personnel can be tied the not be the same as Example or the feature of example and non-be the same as Example or example described in this specification
Close and combine.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changed, replacing and modification.
Claims (10)
1. a kind of equipment for detecting one-dimensional micro-nanometer conducting material thermoelectricity performance parameter, it is characterised in that including：
Heater wire, the first end of the heater wire with first it is heat sink be connected, the second end of the heater wire heat sink is connected with second；
First line of induction, first line of induction is flushed with the two ends of the heater wire, and first line of induction is parallel sets
Put in the lower section of the heater wire, and the first end of first line of induction with the 3rd it is heat sink be connected, first line of induction
The second end heat sink be connected with the 4th；
Second line of induction, second line of induction is flushed with the two ends of first line of induction, and second line of induction is flat
Row is arranged on the lower section of first line of induction, and the first end of second line of induction with the 5th it is heat sink be connected, described the
Second end of two lines of induction heat sink is connected with the 6th；
Heating power supply, the heating power supply is connected with the heater wire, for being heated to the heater wire；
First electrical parameters detection component, the first electrical parameters detection component is connected with first line of induction, for described
The electrical parameter of first line of induction is detected；And
Second electrical parameters detection component, the second electrical parameters detection component is connected with second line of induction, for described
The electrical parameter of second line of induction is detected.
2. equipment according to claim 1, it is characterised in that further comprise：
First overlapped points, first overlapped points are arranged on the heater wire；
Second overlapped points, second overlapped points are arranged on first line of induction；And
3rd overlapped points, the 3rd overlapped points are arranged on second line of induction.
3. equipment according to claim 2, it is characterised in that further comprise：
3rd electrical parameters detection component, the 3rd electrical parameters detection component is used to detect second overlapped points and the described 3rd
Electrical parameter between overlapped points.
4. equipment according to claim 3, it is characterised in that the heater wire, first line of induction and described second
At least one of line of induction is formed by platinum.
5. equipment according to claim 4, it is characterised in that the first electrical parameters detection component includes：
First power supply；
First resistor, the first resistor, first power supply and first line of induction electrical circuit in series；
First voltage table, the first voltage table is in parallel with the first resistor；And
Second voltage table, the second voltage table and the described first sensing line parallel.
6. equipment according to claim 5, it is characterised in that the second electrical parameters detection component includes：
Second source；
Second resistance, the second resistance, the second source and second line of induction electrical circuit in series；
Tertiary voltage table, the tertiary voltage table is in parallel with the second resistance；And
4th voltmeter, the 4th voltmeter and the described second sensing line parallel.
7. equipment according to claim 6, it is characterised in that the 3rd electrical parameters detection component includes：
3rd power supply；
3rd resistor, the 3rd resistor, the second source and testing sample are located at second overlapped points and the described 3rd
Hypomere between overlapped points constitutes electrical circuit；
5th voltmeter, the 5th voltmeter is in parallel with the 3rd resistor；And
6th voltmeter, the 6th voltmeter is in parallel with the hypomere of the testing sample.
8. equipment according to claim 7, it is characterised in that further comprise：
Computation module, the computation module respectively with the first electrical parameters detection component, the second electrical parameters detection component and
Three electrical parameters detection components are connected, the thermoelectricity capability parameter for determining the testing sample.
9. equipment according to claim 8, it is characterised in that the thermoelectricity capability parameter of the testing sample includes thermal conductivity
At least one of rate, Seebeck coefficient and electrical conductivity；
Wherein, the thermal conductivity is determined based on following equation：
λ=λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2),
Wherein,
λ3It is the thermal conductivity of second line of induction,
A3It is the cross-sectional area of second line of induction,
l3It is the length of second line of induction,
l42It is the length of the hypomere of the testing sample,
△R3It is the resistance variations for starting second line of induction after the heating power supply,
A4It is the cross-sectional area of the testing sample,
l31It is the length between the first end of second line of induction and the 3rd overlapped points,
l32It is the length between second end of second line of induction and the 3rd overlapped points,
△R2It is the resistance variations for starting first line of induction after the heating power supply,
R03It is resistance of second line of induction at a temperature of 0 DEG C,
βT3It is temperature-coefficient of electrical resistance of second line of induction in environment temperature T,
△R3It is the resistance variations for starting second line of induction after the heating power supply,
R02It is resistance of first line of induction at a temperature of 0 DEG C,
βT2It is temperature-coefficient of electrical resistance of first line of induction in environment temperature T；
The Seebeck coefficient is determined based on following equation：
S=VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02βT2)+Ss,
Wherein,
VSBe the testing sample hypomere, the second overlapped points of first line of induction and the second end between and it is described second sense
The direct current Seebeck potential between the 3rd overlapped points of line and the second end is answered,
R02It is resistance of first line of induction at a temperature of 0 DEG C,
βT2It is temperature-coefficient of electrical resistance of first line of induction in environment temperature T,
R03It is resistance of second line of induction at a temperature of 0 DEG C,
βT3It is temperature-coefficient of electrical resistance of second line of induction in environment temperature T,
△R2It is the resistance variations for starting first line of induction after the heating power supply,
△R3It is the resistance variations for starting second line of induction after the heating power supply,
SsIt is Seebeck coefficient of the line of induction material in environment temperature T；
The electrical conductivity is determined based on following equation：
σ=l42/R42A4,
Wherein,
l42It is the length of the hypomere of the testing sample,
R42It is the resistance of the hypomere of the testing sample,
A4It is the cross-sectional area of the testing sample.
10. the equipment described in a kind of any one of utilization claim 1~9 detects the side of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter
Method, it is characterised in that including：
(1) testing sample is overlapped in first overlapped points, the second overlapped points and the 3rd overlapped points；
(2) under vacuum, start the heating power supply, the heater wire is heated；
(3) the first electrical parameters detection component, the second electrical parameters detection component and the 3rd electrical parameters detection are utilized
Component obtains electrical parameter；
(4) based on the electrical parameter obtained in step (3), the thermoelectricity capability parameter of the one-dimensional micro-nanometer material is determined,
Wherein,
The thermoelectricity capability parameter of the testing sample includes at least one of thermal conductivity, Seebeck coefficient and electrical conductivity；
The electrical conductivity is determined based on following equation：
λ=λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2),
Wherein,
λ3It is the thermal conductivity of second line of induction,
A3It is the cross-sectional area of second line of induction,
l3It is the length of second line of induction,
l42It is the length of the hypomere of the testing sample,
△R3It is the resistance variations for starting second line of induction after the heating power supply,
A4It is the cross-sectional area of the testing sample,
l31It is the length between the first end of second line of induction and the 3rd overlapped points,
l32It is the length between second end of second line of induction and the 3rd overlapped points,
△R2It is the resistance variations for starting first line of induction after the heating power supply,
R03It is resistance of second line of induction at a temperature of 0 DEG C,
βT3It is temperature-coefficient of electrical resistance of second line of induction in environment temperature T,
△R3It is the resistance variations for starting second line of induction after the heating power supply,
R02It is resistance of first line of induction at a temperature of 0 DEG C,
βT2It is temperature-coefficient of electrical resistance of first line of induction in environment temperature T；
The Seebeck coefficient is determined based on following equation：
S=VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02βT2)+Ss,
Wherein,
VSBe the testing sample hypomere, the second overlapped points of first line of induction and the second end between and it is described second sense
The direct current Seebeck potential between the 3rd overlapped points of line and the second end is answered,
R02It is resistance of first line of induction at a temperature of 0 DEG C,
βT2It is temperature-coefficient of electrical resistance of first line of induction in environment temperature T,
R03It is resistance of second line of induction at a temperature of 0 DEG C,
βT3It is temperature-coefficient of electrical resistance of second line of induction in environment temperature T,
△R2It is the resistance variations for starting first line of induction after the heating power supply,
△R3It is the resistance variations for starting second line of induction after the heating power supply,
SsIt is Seebeck coefficient of the line of induction material in environment temperature T；
The electrical conductivity is determined based on following equation：
σ=l42/R42A4,
Wherein,
l42It is the length of the hypomere of the testing sample,
R42It is the resistance of the hypomere of the testing sample,
A4It is the cross-sectional area of the testing sample.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110031504A (en) * | 2019-03-20 | 2019-07-19 | 东南大学 | The test method of thermal contact resistance between a kind of circular cross-section one-dimensional nano structure |
| WO2019144396A1 (en) * | 2018-01-24 | 2019-08-01 | 武汉嘉仪通科技有限公司 | Method and apparatus for testing thermal conductivity of nanoscale material |
| CN112881464A (en) * | 2021-01-20 | 2021-06-01 | 中国科学院工程热物理研究所 | Method and device for directly and comprehensively measuring thermoelectric performance of micro-nano material in situ |
| CN112909155A (en) * | 2021-01-20 | 2021-06-04 | 中国科学院工程热物理研究所 | Detector for directly measuring thermoelectric figure of merit of micro-nano material and preparation process |
| CN114264692A (en) * | 2021-12-14 | 2022-04-01 | 南京理工大学 | Method for simultaneously measuring thermal conductivity and emissivity of micro-nano material |
| US11474060B2 (en) * | 2017-09-05 | 2022-10-18 | University Of Connecticut | Instruments for measurement of multiple material properties |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101354388A (en) * | 2008-09-02 | 2009-01-28 | 北京大学 | Method and system for measuring quasi one-dimensional nano-material Seebeck coefficient |
| CN102305807A (en) * | 2011-05-25 | 2012-01-04 | 清华大学 | Method for measuring Seebeck coefficient of micro/nano thermoelectric materials or devices |
| CN102818820A (en) * | 2012-09-11 | 2012-12-12 | 中国科学技术大学 | System for measuring heat conductivity coefficient of nano materials based on vanadium dioxide nano wires |
| CN104880482A (en) * | 2015-04-13 | 2015-09-02 | 中国科学院物理研究所 | Method and device for measuring heat conductivity of quasi-one-dimensional conductive material |
| CN105628732A (en) * | 2015-12-23 | 2016-06-01 | 华中科技大学 | Device for measuring Seebeck coefficient and method of device |
| KR101682309B1 (en) * | 2015-07-29 | 2016-12-02 | 경상대학교산학협력단 | Defect evaluation apparatus of the composite materials |
-
2017
- 2017-03-09 CN CN201710139104.4A patent/CN107085007B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101354388A (en) * | 2008-09-02 | 2009-01-28 | 北京大学 | Method and system for measuring quasi one-dimensional nano-material Seebeck coefficient |
| CN102305807A (en) * | 2011-05-25 | 2012-01-04 | 清华大学 | Method for measuring Seebeck coefficient of micro/nano thermoelectric materials or devices |
| CN102818820A (en) * | 2012-09-11 | 2012-12-12 | 中国科学技术大学 | System for measuring heat conductivity coefficient of nano materials based on vanadium dioxide nano wires |
| CN104880482A (en) * | 2015-04-13 | 2015-09-02 | 中国科学院物理研究所 | Method and device for measuring heat conductivity of quasi-one-dimensional conductive material |
| KR101682309B1 (en) * | 2015-07-29 | 2016-12-02 | 경상대학교산학협력단 | Defect evaluation apparatus of the composite materials |
| CN105628732A (en) * | 2015-12-23 | 2016-06-01 | 华中科技大学 | Device for measuring Seebeck coefficient and method of device |
Non-Patent Citations (4)
| Title |
|---|
| WEIGANG MA ET AL.: "Study of the thermal, electrical and thermoelectric properties of metallic nanofilms", 《INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER》 * |
| WEIGANG MA ET AL.: "Systematic characterization of transport and thermoelectric properties of a macroscopic graphene fiber", 《NANO RESEARCH》 * |
| 刘锦辉 等: "碳纤维与热沉间接触热阻随温度变化的实验研究", 《工程热物理学报》 * |
| 李蒙 等: "热电材料塞贝克系数测试影响因素研究", 《中国测试》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11474060B2 (en) * | 2017-09-05 | 2022-10-18 | University Of Connecticut | Instruments for measurement of multiple material properties |
| WO2019144396A1 (en) * | 2018-01-24 | 2019-08-01 | 武汉嘉仪通科技有限公司 | Method and apparatus for testing thermal conductivity of nanoscale material |
| US11275041B2 (en) | 2018-01-24 | 2022-03-15 | Wuhan Joule Yacht Science & Technology Co., Ltd. | Method and device for testing thermal conductivity of nanoscale material |
| CN110031504A (en) * | 2019-03-20 | 2019-07-19 | 东南大学 | The test method of thermal contact resistance between a kind of circular cross-section one-dimensional nano structure |
| CN110031504B (en) * | 2019-03-20 | 2021-07-20 | 东南大学 | Method for testing thermal contact resistance between circular-section one-dimensional nano structure |
| CN112881464A (en) * | 2021-01-20 | 2021-06-01 | 中国科学院工程热物理研究所 | Method and device for directly and comprehensively measuring thermoelectric performance of micro-nano material in situ |
| CN112909155A (en) * | 2021-01-20 | 2021-06-04 | 中国科学院工程热物理研究所 | Detector for directly measuring thermoelectric figure of merit of micro-nano material and preparation process |
| WO2022156740A1 (en) * | 2021-01-20 | 2022-07-28 | 中国科学院工程热物理研究所 | Method and device for direct in-situ comprehensive measurement of thermoelectric properties of micro-nano material |
| CN112881464B (en) * | 2021-01-20 | 2022-12-09 | 中国科学院工程热物理研究所 | Method and device for directly and comprehensively measuring thermoelectric performance of micro-nano material in situ |
| CN114264692A (en) * | 2021-12-14 | 2022-04-01 | 南京理工大学 | Method for simultaneously measuring thermal conductivity and emissivity of micro-nano material |
| CN114264692B (en) * | 2021-12-14 | 2024-04-23 | 南京理工大学 | Method for simultaneously measuring thermal conductivity and emissivity of micro-nano material |
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