CN107068833A - A kind of semiconductor cap layer - Google Patents
A kind of semiconductor cap layer Download PDFInfo
- Publication number
- CN107068833A CN107068833A CN201611027074.XA CN201611027074A CN107068833A CN 107068833 A CN107068833 A CN 107068833A CN 201611027074 A CN201611027074 A CN 201611027074A CN 107068833 A CN107068833 A CN 107068833A
- Authority
- CN
- China
- Prior art keywords
- protection glue
- cap layer
- semiconductor cap
- glue
- heat conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 239000003822 epoxy resin Substances 0.000 claims abstract description 6
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 6
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 6
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 5
- 239000002253 acid Substances 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 208000015181 infectious disease Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The invention discloses a kind of semiconductor cap layer; including Protection glue; the Protection glue is between addition Heat Conduction Material, optical material and polarizing materials in the one or more in UV glue, silicones, epoxy resin and silicon rubber, the Protection glue, the thickness 0.1um 10mm of the Protection glue; the semiconductor cap layer of the present invention will not form short circuit when binding; open circuit will not be formed when laser carving or etching, environment friendly and pollution-free, no strong acid corrosion; reliability is high, and cost is low.
Description
Technical field
The present invention relates to valve pocket, in particular, it is related to a kind of semiconductor cap layer.
Background technology
Conventional semiconductors protective layer typically uses gaseous phase deposition, does not meet the human demand of environmental protection and energy saving long term growth.Tradition
The protective layer of LED chip I C chips typically is all not enough to be protected in 0.1um, and easily short circuit is formed when binding,
Easily open circuit is formed when laser carving or etching.
The content of the invention
In view of this, short circuit will not be formed when binding it is an object of the present invention to provide one kind, in laser carving or etching
When will not form open circuit, environment friendly and pollution-free, no strong acid corrosion, reliability is high, the low semiconductor cap layer of cost.
In order to solve the above-mentioned technical problem, the technical scheme is that：
A kind of semiconductor cap layer, including Protection glue, the Protection glue are UV glue, silicones, epoxy resin and silicon rubber
In one or more, addition Heat Conduction Material, optical material and polarizing materials, the thickness of the Protection glue in the Protection glue
Between 0.1um-10mm.
A kind of use technique of semiconductor cap layer, uses bat printing, silk to LED chip or IC chip under vacuum conditions
Print, spraying, spin coating, scratch and turn pressure mode and be coated with Protection glue, then redundant protection glue is removed by the way of laser carving, leave needs
Protection glue.
Preferably, the Heat Conduction Material is graphene.
Preferably, the optical material is methymethacrylate.
Preferably, the polarizing materials are polyvinyl alcohol.
The technology of the present invention effect major embodiment is in the following areas：Under vacuum conditions gluing to ensure that protective layer will not be by
To the destroying infection of air；Heat Conduction Material, optical material and polarizing materials are added in Protection glue to protect when laser carving to swash
Light will not hurt chip, will not form short circuit when binding, open circuit will not be formed when laser carving or etching；Protect
Shield glue is that the one or more in UV glue, silicones, epoxy resin and silicon rubber have environment friendly and pollution-free, no strong acid corrosion, can
High, the low advantage of cost by property.
Embodiment
Below to the present invention embodiment be described in further detail so that technical solution of the present invention be more readily understood and
Grasp.
A kind of semiconductor cap layer, including Protection glue, the Protection glue are UV glue, silicones, epoxy resin and silicon rubber
In one or more, addition Heat Conduction Material, optical material and polarizing materials in the Protection glue, the Heat Conduction Material is graphite
Alkene, the optical material is methymethacrylate, and the polarizing materials are polyvinyl alcohol, the thickness 0.1um- of the Protection glue
Between 10mm.
A kind of use technique of semiconductor cap layer, uses bat printing, silk to LED chip or IC chip under vacuum conditions
Print, spraying, spin coating, scratch and turn pressure mode and be coated with Protection glue, then redundant protection glue is removed by the way of laser carving, leave needs
Protection glue.
The technology of the present invention effect major embodiment is in the following areas：Under vacuum conditions gluing to ensure that protective layer will not be by
To the destroying infection of air；Heat Conduction Material, optical material and polarizing materials are added in Protection glue to protect when laser carving to swash
Light will not hurt chip, will not form short circuit when binding, open circuit will not be formed when laser carving or etching；Protect
Shield glue is that the one or more in UV glue, silicones, epoxy resin and silicon rubber have environment friendly and pollution-free, no strong acid corrosion, can
High, the low advantage of cost by property.
Certainly, it is the representative instance of the present invention above, in addition, the present invention can also have other a variety of specific implementations
The technical scheme of mode, all use equivalent substitutions or equivalent transformation formation, all falls within the scope of protection of present invention.
Claims (5)
1. a kind of semiconductor cap layer, it is characterised in that：Including Protection glue, the Protection glue is UV glue, silicones, epoxy resin
With the one or more in silicon rubber, addition Heat Conduction Material, optical material and polarizing materials, the Protection glue in the Protection glue
Thickness 0.1um-10mm between.
2. the use technique of semiconductor cap layer as claimed in claim 1, it is characterised in that：Under vacuum conditions to LED core
Piece or IC chip using bat printing, silk-screen, spraying, spin coating, scratch and turn pressure mode and be coated with Protection glue, then gone by the way of laser carving
Except redundant protection glue, the Protection glue of needs is left.
3. semiconductor cap layer as claimed in claim 1, it is characterised in that：The Heat Conduction Material is graphene.
4. semiconductor cap layer as claimed in claim 1, it is characterised in that：The optical material is methymethacrylate.
5. semiconductor cap layer as claimed in claim 1, it is characterised in that：The polarizing materials are polyvinyl alcohol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611027074.XA CN107068833A (en) | 2016-11-22 | 2016-11-22 | A kind of semiconductor cap layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611027074.XA CN107068833A (en) | 2016-11-22 | 2016-11-22 | A kind of semiconductor cap layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107068833A true CN107068833A (en) | 2017-08-18 |
Family
ID=59618720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611027074.XA Pending CN107068833A (en) | 2016-11-22 | 2016-11-22 | A kind of semiconductor cap layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107068833A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166957A (en) * | 2018-08-03 | 2019-01-08 | 湖南华特光电科技有限公司 | A kind of LED light packaging technology |
| CN112853458A (en) * | 2021-01-08 | 2021-05-28 | 常州晶业液态金属有限公司 | Method for processing amorphous alloy by electrochemical material removal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103122075A (en) * | 2013-03-19 | 2013-05-29 | 苏州格瑞丰纳米科技有限公司 | High heat-conducting thin graphene-based composite material, as well as preparation method and application thereof |
| WO2013112915A1 (en) * | 2012-01-25 | 2013-08-01 | General Hydroponics, Inc. | Compositions, devices and methods for optimizing photosynthetically active radiation |
| CN104592950A (en) * | 2014-12-26 | 2015-05-06 | 苏州格瑞丰纳米科技有限公司 | High-thermal conductivity graphite alkenyl polymer heat conducting film and preparation method thereof |
-
2016
- 2016-11-22 CN CN201611027074.XA patent/CN107068833A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013112915A1 (en) * | 2012-01-25 | 2013-08-01 | General Hydroponics, Inc. | Compositions, devices and methods for optimizing photosynthetically active radiation |
| CN103122075A (en) * | 2013-03-19 | 2013-05-29 | 苏州格瑞丰纳米科技有限公司 | High heat-conducting thin graphene-based composite material, as well as preparation method and application thereof |
| CN104592950A (en) * | 2014-12-26 | 2015-05-06 | 苏州格瑞丰纳米科技有限公司 | High-thermal conductivity graphite alkenyl polymer heat conducting film and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166957A (en) * | 2018-08-03 | 2019-01-08 | 湖南华特光电科技有限公司 | A kind of LED light packaging technology |
| CN112853458A (en) * | 2021-01-08 | 2021-05-28 | 常州晶业液态金属有限公司 | Method for processing amorphous alloy by electrochemical material removal |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170818 |