CN107039187A - A kind of dystopy adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide - Google Patents
A kind of dystopy adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 126
- 238000002360 preparation method Methods 0.000 title claims abstract description 40
- KDSXXMBJKHQCAA-UHFFFAOYSA-N disilver;selenium(2-) Chemical compound [Se-2].[Ag+].[Ag+] KDSXXMBJKHQCAA-UHFFFAOYSA-N 0.000 title claims abstract description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 64
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000008367 deionised water Substances 0.000 claims abstract description 29
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000003792 electrolyte Substances 0.000 claims abstract description 26
- 239000011521 glass Substances 0.000 claims abstract description 18
- 230000001588 bifunctional effect Effects 0.000 claims abstract description 12
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 claims abstract description 9
- 239000003446 ligand Substances 0.000 claims abstract description 8
- 101710134784 Agnoprotein Proteins 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 51
- 239000011669 selenium Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 39
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(I) nitrate Inorganic materials [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 35
- 235000019441 ethanol Nutrition 0.000 claims description 20
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 18
- 239000011734 sodium Substances 0.000 claims description 15
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 12
- 239000008346 aqueous phase Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 235000019345 sodium thiosulphate Nutrition 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical class OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000002270 dispersing agent Substances 0.000 claims description 6
- 125000000962 organic group Chemical group 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 239000003381 stabilizer Substances 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000009514 concussion Effects 0.000 claims description 5
- 238000002242 deionisation method Methods 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229920001021 polysulfide Polymers 0.000 claims description 4
- 239000005077 polysulfide Substances 0.000 claims description 4
- 150000008117 polysulfides Polymers 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims description 3
- 235000018417 cysteine Nutrition 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000012047 saturated solution Substances 0.000 claims description 2
- 238000003980 solgel method Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 claims 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims 2
- 235000019260 propionic acid Nutrition 0.000 claims 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims 1
- 125000003396 thiol group Chemical class [H]S* 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- 231100000252 nontoxic Toxicity 0.000 abstract description 4
- 230000003000 nontoxic effect Effects 0.000 abstract description 4
- 206010070834 Sensitisation Diseases 0.000 description 8
- 230000008313 sensitization Effects 0.000 description 8
- 238000004070 electrodeposition Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000001354 calcination Methods 0.000 description 5
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- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 5
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 238000010792 warming Methods 0.000 description 5
- GNWCVDGUVZRYLC-UHFFFAOYSA-N [Se].[Ag].[Ag] Chemical compound [Se].[Ag].[Ag] GNWCVDGUVZRYLC-UHFFFAOYSA-N 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010189 synthetic method Methods 0.000 description 3
- FAXDZWQIWUSWJH-UHFFFAOYSA-N 3-methoxypropan-1-amine Chemical compound COCCCN FAXDZWQIWUSWJH-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 125000005909 ethyl alcohol group Chemical group 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 239000011244 liquid electrolyte Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- LEVWYRKDKASIDU-QWWZWVQMSA-N D-cystine Chemical compound OC(=O)[C@H](N)CSSC[C@@H](N)C(O)=O LEVWYRKDKASIDU-QWWZWVQMSA-N 0.000 description 1
- -1 TGA Chemical compound 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229960003067 cystine Drugs 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2036—Light-sensitive devices comprising an oxide semiconductor electrode comprising mixed oxides, e.g. ZnO covered TiO2 particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
A kind of dystopy adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide, comprises the following steps：（1）Clean transparent FTO electro-conductive glass；（2）Prepare deionized water solution, the AgNO of sodium thiosulfate3Deionized water solution, prepare Ag2Se quantum dots, and be scattered in absolute ethyl alcohol；（3）Prepare TiO2Conductive film, ligand exchange is carried out to conductive film surface, obtains the light anode through bifunctional molecule modified, is sensitized Ag2Se quantum dots, form quantum dot sensitized light anode；（4）Electrolyte is added dropwise in the middle part of to quantum dot sensitized light anode, allows electrolyte to be diffused into the working portion of whole electrode；（5）Electrode will be covered to electrolyte, and by light anode together with being fixed to electrode, obtain quantum dot solar cell.The present invention uses nontoxic Ag2Se quantum dots, and apply the mode of ligand exchange to improve the coverage rate of quantum dot, improve the photoelectric efficiency of device.
Description
Technical field
The invention belongs to area of solar cell, more particularly to a kind of dystopy absorption silver selenide（Ag2Se）It is quantum dot sensitized
The preparation method of solar cell.
Background technology
With the increasingly depleted of fossil energy sources, cleaning and the utilization of regenerative resource turn into the emphasis and national economy of research
The lifeblood of development.Quantum dot solar cell as third generation solar cell representative, with low cost, manufacture craft letter
It is single, the features such as potential efficient.Quantum dot solar cell（QDSSC）Mainly it is made up of three parts, light anode, electrolyte and to electricity
Pole, light anode is the core of battery, and its preparation is by the wide band gap semiconducter film with nanostructured（Usually
TiO2）It is covered on transparent conducting glass, then deposits one layer of quantum dot on surface.Divided from deposition approach, current quantum
The deposition process of point can be divided mainly into two major classes：In TiO2Direct growth quantum dot and the pre-synthesis quantum dot of use on mesoporous film
Adsorb the mode of assembling.Using TiO2, there is quantum dot in semiconductor surface point in the method for direct growth quantum dot on mesoporous film
Cloth is uneven, preparation time length, the shortcomings of process is cumbersome.And the mode of pre-synthesis quantum dot absorption assembling, it is simple to operate, can
By controlling the energy gap of synthesis condition quantum point, the photoelectric efficiency of quantum dot sensitized solar cell is improved；But
Using this kind of method, have the shortcomings that surface coverage is low, influence the photoelectric efficiency of solar cell.
The A of CN 103594248 disclose a kind of Bi2S3Quantum dot sensitized TiO2Solar cell preparation method, use
Continuous ionic layer absorption method synthesis quantum dot sensitizing layer, prepares quantum dot sensitization solar battery.But it is made using this kind of method
Standby quantum dot surface particle diameter is uneven, and preparation process is cumbersome.
CN102930995 A disclose a kind of quantum dot modification organic inorganic hybridization solar cell and preparation method thereof,
Using continuous ionic layer absorption method in TiO2CdSe quantum dot is generated on nanometer stick array and organic polymer is deposited above
P3HT.But it is higher using this method cost, and building-up process is complicated, such as needs hydro-thermal method to prepare TiO2Nanometer rods.
The A of CN 102364648 disclose a kind of quantum dot-TiO of sulfydryl bridging molecules bonding2Nano compound light anode
Preparation method, the quantum dot-TiO of sulfydryl bridging molecules bonding is synthesized using hydro-thermal method2Complex light anode, but measured in this method
The preparation process of son point is more complicated, and needs the reaction condition of HTHP, is unfavorable for popularization and application.
As known from the above, the grafting method of quantum dot has great meaning to the photoelectric properties for improving quantum dot solar cell
Justice, a kind of synthetic method of simultaneous selection is simple, the suitable narrow band gap quantum dot of band gap is also particularly important.
The content of the invention
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art simply different there is provided a kind of synthetic method
Position absorption silver selenide（Ag2Se）The preparation method of quantum dot sensitized solar cell, gained quantum dot sensitization solar battery grain
Footpath is controllable, and photoelectric properties are preferable.
The technical scheme that the present invention solves the use of its technical problem is that a kind of dystopy adsorbs silver selenide（Ag2Se）Quantum dot
The preparation method of sensitization solar battery, comprises the following steps：
（1）Transparent FTO electro-conductive glass is cleaned, electrically conducting transparent substrate is obtained；
（2）Na is prepared respectively2SeSO3（Sodium thiosulfate）Deionized water solution, AgNO3Deionized water solution, using aqueous phase
Co-electrodeposition method prepares Ag2Se quantum dots, and be scattered in absolute ethyl alcohol, obtain Ag2Se quantum dot ethanol solutions；
（3）TiO is prepared using sol-gel process2Conductive film, part friendship is carried out by immersion way to conductive film surface
Change, obtain the light anode through bifunctional molecule modified, Ag is sensitized using direct absorption method2Se quantum dots, form quantum dot quick
Change light anode；
（4）To step（3）Electrolyte is added dropwise in the middle part of the quantum dot sensitized light anode of gained, allows electrolyte to expand using solution diffusion
It is scattered to the working portion of whole electrode；
（5）Electrode will be covered to step（4）Electrolyte on, with clip by light anode together with being fixed to electrode, the amount of obtaining
Son point solar cell.
Above-mentioned preparation method, it is preferred that the step（1）In, cleaning way is：Successively using deionized water, anhydrous
Ethanol, the min of isopropanol ultrasonic vibration 15 ~ 20, after concussion terminates, using ozone oxidation surface organic group.
Above-mentioned preparation method, it is preferred that the step（2）In, Ag2The preparation method of Se quantum dots：Using AgNO3's
Deionized water solution is used as silver-colored source, Na2SeSO3Deionized water solution be selenium source, polyvinylpyrrolidone（PVP）As scattered
Agent, 3- mercaptopropionic acids（3-MPA）It is used as surface stabilizer；
Add surface stabilizer and dispersant into the deionized water solution of silver nitrate, and add ammoniacal liquor regulation pH to 10.1 ~
10.8, add selenium source, the min of stirring reaction 5 ~ 10（Quantum dot is synthesized in aqueous phase）, centrifuge, by gained solid quantum
Point particle is scattered in absolute ethyl alcohol, obtains Ag2Se quantum dot ethanol solutions.
Above-mentioned preparation method, it is preferred that the step（2）In, the control of the deionized water solution concentration of silver nitrate for 2 ~
10 mmol/L。Na2SeSO3（Sodium thiosulfate）Deionized water solution in sodium thiosulfate and silver nitrate solution in
AgNO3Mol ratio be 1:(2~5).The mass ratio of silver nitrate in the addition and silver nitrate solution of dispersant is（0.15~
1.7）：1.The addition and AgNO of surface stabilizer3The volume ratio of deionized water solution be（0.05~0.15）：1.
Above-mentioned preparation method, it is preferred that the step（2）In, gained Ag2The concentration of Se quantum dot ethanol solutions
For 4 ~ 10 mmol/L.
Above-mentioned preparation method, it is preferred that the step（3）In, detailed process is：, will using spin-coating method
TiO2Slurry for rotary coating is in step（1）The FTO conductive glass surfaces cleaned up, are allowed to form uniform ground film, are subsequently placed in
Through 400~450 DEG C of 30~60min of temperature calcination in Muffle furnace, cool to room temperature with the furnace, obtain TiO2Light anode；By gained TiO2
Light anode immerses the h of acetonitrile solution 24 ~ 36 of bifunctional molecule（Grafting bifunctional molecule）, washes of absolute alcohol, leaching are used after taking-up
Enter step（2）Gained Ag224 ~ 36 h in Se quantum dot ethanol solutions, produce quantum dot sensitized light anode.
Above-mentioned preparation method, it is preferred that the step（3）In, bifunctional molecule includes but is not limited to mercaptopropionic acid（3-
MPA）, cysteine, hydrogen thioglycolic acid（I.e. TGA, writes a Chinese character in simplified form TGA）Deng.Solvent is acetonitrile, when bifunctional molecule is from half
During cystine, from saturated solution；When from mercaptopropionic acid, hydrogen thioglycolic acid, it is 10 ~ 20% to control volumetric concentration.
Above-mentioned preparation method, it is preferred that the step（4）In, electrolyte be polysulfide electrolyte, main component and
Concentration：Na2The control of S concentration is 1.5 ~ 2.5 mol/L, and the control of S simple substance is 1.5 ~ 2.5 mol/L, is dissolved in deionized water.
Above-mentioned preparation method, it is preferred that the step（5）In, it is platinum electrode or CuS electrodes to electrode.
Ag is prepared using aqueous phase co-electrodeposition method first2The quantum dot sensitized liquid of Se, then using spin-coating method on conductive substrates
Prepare TiO2Semi-conducting electrode, to TiO2The progress of semi-conducting electrode surface applications bifunctional molecule is ligand modified, using directly absorption
Method carries out Ag2Se is quantum dot sensitized；Finally to electrolyte is added dropwise in the middle part of electrode, electrolyte is allowed to be diffused into entirely using diffusion
Electrode, covers electrode and fixation, you can quantum dot sensitized solar cell is made.The present invention uses nontoxic Ag2Se quantum dots,
And the mode of application ligand exchange improves the coverage rate of quantum dot, improves the photoelectric efficiency of device.
Ag2Se is one kind in silver-colored chalcogenide, and its band gap is in 0.07 ~ 0.15 eV（R. Dalven, R.
Gill, Phys. Rev. 159 (1995) 645-649）, with good photo-thermal and photoelectric properties, element is nontoxic, and this hair
Bright use co-electrodeposition method synthesizes quantum dot, and method is easy, practical.Change the forbidden band of quantum dot by adjusting the size of particle
Width, matches somebody with somebody vegetative grafting step while adding, and optimization quantum dot is sensitized broad stopband in the distribution at wide bandgap semiconductor interface, improvement
The coverage rate of semiconductor, so as to improve the photoelectric properties of quantum dot solar cell.
Compared with prior art, the advantage of the invention is that：
Ag is synthesized using aqueous phase co-electrodeposition method2Se quantum dots, synthetic method is simple, and it is convenient to prepare, nontoxic, and particle diameter can
Control, can synthesize the quantum dot of different band gap, corresponding to different extinction wave bands；Synthesized quantum dot uses mercaptopropionic acid conduct
Surface dispersant, and mercaptopropionic acid is commonly used for the difunctional connection molecule of quantum dot and light anode, is conducive to quantum dot sensitized mistake
The progress of journey, improves area coverage；To synthesis TiO2Light anode carries out ligand exchange, is partly led with bifunctional molecule modification broad stopband
Body surface face, can further improve level of coverage of the quantum dot to light anode, improve the photo electric of quantum dot sensitized solar cell
Energy.
Brief description of the drawings
Fig. 1 is the Ag obtained by prepared by the embodiment of the present invention 12The quantum dot sensitized TiO of Se2The FESEM figures of photoanode surface.
Embodiment
For the ease of understanding the present invention, present invention work more comprehensively, is meticulously described below in conjunction with preferred embodiment,
But protection scope of the present invention is not limited to embodiment in detail below.
Unless otherwise defined, the implication that all technical terms used hereinafter are generally understood that with those skilled in the art
It is identical.Technical term used herein is intended merely to describe the purpose of specific embodiment, is not intended to the limitation present invention
Protection domain.
Except there is a special instruction, the various reagents used in the present invention, raw material be can be commercially commodity or
Person can pass through product made from known method.
Embodiment 1：
The dystopy absorption silver selenide of the present embodiment（Ag2Se）The preparation method of quantum dot sensitized solar cell, including following step
Suddenly：
（1）The preparation of transparent conductive substrate：Transparent FTO electro-conductive glass is selected, deionized water, absolute ethyl alcohol, isopropyl are immersed successively
The min of ultrasonic vibration 15 in alcohol, after concussion terminates, using the organic group of ozone oxidation FTO conductive glass surfaces, obtains transparent
Conductive substrates.
（2）Ag is prepared using aqueous phase co-electrodeposition method2Se quantum dots：The mmol/L silver nitrates of 6 mL 8 are added in there-necked flask
Deionized water solution, adds 0.8 mL3- mercaptopropionic acids and 5 mg polyvinylpyrrolidones, and add ammoniacal liquor adjust pH to
10.5,10 min are stirred, the deionized water solution of the mmol/L sodium thiosulfates of 6 mL 4 is added, continue to stir 10min, from
Ag is obtained after heart separation2Se quantum dots（Average grain diameter is measured as 6.24 nm）, and by the Ag of gained2Se quantum dots are scattered in 3 mL
In absolute ethyl alcohol, the Ag that concentration is 4 mmol/L is obtained2Se quantum dot ethanol solutions；
（3）Prepare quantum dot sensitized light anode：Using spin-coating method, by TiO2Slurry for rotary coating is in step（1）Clean up
FTO conductive glass surfaces, be allowed to form uniform ground film, be subsequently placed in Muffle furnace and be warming up to 450 DEG C of calcination process 50
Min, cools to room temperature with the furnace, obtains TiO2Light anode；Again by gained TiO2Light anode is placed in the sulfydryl third that volumetric concentration is 10%
Acid（3-MPA）Acetonitrile solution in soak 24 h, fully cleaned with absolute ethyl alcohol after taking-up, then be soaked in step（2）Gained
Ag224h in Se quantum dot ethanol solutions, produces quantum dot sensitized light anode.
（4）Prepare quantum dot sensitization solar battery device：S and Na are weighed according to a certain percentage2S, is dissolved in deionization
In water, Na2The control of S concentration is 1.5 mol/L, and the control of S simple substance is 1.5 mol/L, obtains electrolyte-polysulfide electrolyte,
It is added dropwise in step（3）In the quantum dot sensitized light anode of gained, electrolyte is allowed to be diffused into whole electrode using solution diffusion
Working portion；
（5）CuS electrodes will be covered to step（4）Electrolyte on, with clip by light anode together with being fixed to electrode, obtain
Dystopy adsorbs silver selenide（Ag2Se）Quantum dot sensitized solar cell.
Test the Ag obtained by the present embodiment2The performance of the quantum dot sensitized solar cells of Se：In room temperature environment, xenon lamp is used
Simulated solar irradiation, light intensity is 100 mW/cm2, effective illuminating area is 0.25 cm2Photoelectric transformation efficiency be 4.5%.
Embodiment 2：
The dystopy absorption silver selenide of the present embodiment（Ag2Se）The preparation method of quantum dot sensitized solar cell, including following step
Suddenly：
（1）The preparation of transparent conductive substrate：Transparent FTO electro-conductive glass is selected, deionized water, absolute ethyl alcohol, isopropyl are immersed successively
The min of ultrasonic vibration 20 in alcohol, after concussion terminates, using the organic group of ozone oxidation FTO conductive glass surfaces.
（2）Ag is prepared using aqueous phase co-electrodeposition method2Se quantum dots：The mmol/L silver nitrates of 6 mL 8 are added in there-necked flask
Deionized water solution, adds 0.8 mL3- mercaptopropionic acids and 5 mg polyvinylpyrrolidones, and add ammoniacal liquor adjust pH to
10.5,10 min are stirred, the mmol/L Na of 6 mL 4 are added2SeSO3Deionized water solution, continue stir 10min, centrifugation
Ag is obtained after separation2Se solid quantum dot particles（Average grain diameter is measured as 7.13 nm）, and by the Ag of gained2Se solid quantum dots
Particle is scattered in 3 mL absolute ethyl alcohols, obtains the Ag that concentration is 8 mmol/L2Se quantum dot ethanol solutions；
（3）Prepare quantum dot sensitized light anode：Using spin-coating method, by TiO2Slurry for rotary coating is in step（1）Clean up
FTO conductive glass surfaces, be allowed to form uniform ground film, be subsequently placed in Muffle furnace and be warming up to 450 DEG C of calcination process 50
Min, cools to room temperature with the furnace, obtains TiO2Light anode；Again by gained TiO2Light anode is placed in the hydrogen sulfydryl that volumetric concentration is 20%
Acetic acid（TGA）Acetonitrile solution in soak 30 h, fully cleaned with absolute ethyl alcohol after taking-up, then be soaked in step（2）Gained
Ag230 h in Se quantum dot ethanol solutions, produce quantum dot sensitized light anode.
（4）Prepare quantum dot sensitization solar battery device：S and Na are weighed according to a certain percentage2S, is dissolved in deionization
In water, Na2The control of S concentration is 2 mol/L, and the control of S simple substance is 2 mol/L, electrolyte-polysulfide electrolyte is obtained, by electricity
Solution drop is added on step（3）In the quantum dot sensitized light anode of gained, electrolyte is allowed to be diffused into entirely using solution diffusion
The working portion of electrode.
（5）CuS is covered to electrode to step（4）Electrolyte on, with clip by light anode together with being fixed to electrode,
Obtain quantum dot solar cell.
Test the Ag obtained by the present embodiment2The performance of the quantum dot sensitized solar cells of Se：In room temperature environment, xenon lamp is used
Simulated solar irradiation, light intensity is 100 mW/cm2, effective illuminating area is 0.25 cm2Photoelectric transformation efficiency be 5.1%.
Comparative example 1：
In this comparative example, it is not added with ligand modified lower using direct absorption method preparation Ag2The quantum dot sensitized light anodes of Se:
（1）The preparation of transparent conductive substrate：Transparent FTO electro-conductive glass is selected, deionized water, absolute ethyl alcohol, isopropyl are immersed successively
The min of ultrasonic vibration 15 in alcohol, after concussion terminates, using the organic group of ozone oxidation FTO conductive glass surfaces.
（2）Ag is prepared using aqueous phase co-electrodeposition method2Se quantum dots：The mmol/L silver nitrate water of 6 mL 8 is added in there-necked flask
Solution, adds 0.8 mL3- mercaptopropionic acids and 5mg polyvinylpyrrolidones, and add ammoniacal liquor regulation pH to 10.5, stirring 10
Min, adds the deionized water solution of the mmol/L sodium thiosulfates of 6 mL 4, continues to stir 10min, is obtained after centrifugation
Ag2Se quantum dots（Average grain diameter is measured as 6.24 nm）, and by the Ag of gained2Se quantum dots are scattered in 3 mL absolute ethyl alcohols,
Obtain the Ag that concentration is 4 mmol/L2Se quantum dot ethanol solutions；
（3）Prepare quantum dot sensitized light anode：Using spin-coating method, by TiO2Slurry for rotary coating is in step（1）Clean up
FTO conductive glass surfaces, be allowed to form uniform ground film, be subsequently placed in Muffle furnace and be warming up to 450 DEG C of calcination process 50
Min, cools to room temperature with the furnace, obtains TiO2Light anode；Again by gained TiO2Light anode is soaked in step（2）Gained Ag2Se quantum
24 h in point ethanol solution, obtain quantum dot sensitized light anode.
（4）Prepare quantum dot sensitization solar battery device：S and Na are weighed according to a certain percentage2S, is dissolved in deionization
In water, Na2The control of S concentration is 1.5 mol/L, and the control of S simple substance is 1.5 mol/L, obtains liquid electrolyte, is added dropwise in step
（3）In the quantum dot sensitized light anode of gained, electrolyte is allowed to be diffused into the working portion of whole electrode using solution diffusion.
（5）CuS electrodes are covered to electrolyte, with clip by light anode together with being fixed to electrode, obtain quantum dot
Solar cell.
Test the Ag obtained by this comparative example2The performance of the quantum dot sensitized solar cells of Se：In room temperature environment, xenon lamp is used
Simulated solar irradiation, light intensity is 100 mW/cm2, effective illuminating area is 0.25 cm2Photoelectric transformation efficiency be 2.7%.
Comparative example 2
In this comparative example, Ag is prepared using continuous ionic layer method2The quantum dot sensitized light anodes of Se:
（1）The preparation of transparent conductive substrate：Transparent FTO electro-conductive glass is selected, deionized water, absolute ethyl alcohol, isopropyl are immersed successively
The min of ultrasonic vibration 20 in alcohol, using the organic group of ozone oxidation FTO conductive glass surfaces.
（2）Prepare quantum dot sensitized light anode：Using spin-coating method, by TiO2Slurry for rotary coating is in cleaning up
FTO conductive glass surfaces, are allowed to form uniform ground film, are subsequently placed in Muffle furnace and are warming up to 450 DEG C of calcination process 50
Min, obtains TiO2Light anode；At 25 DEG C, by the TiO prepared2Light anode is soaked in 0.1 mol/L AgNO3One point of solution
Clock, is warming up to 50 DEG C, then be soaked in 0.3mol/L Na2SeSO3One hour in solution, aforesaid operations are repeated 4 times, to light
Anode surface one layer of Ag of deposition completely2Se quantum dot particles, obtain Ag2Se is sensitized light anode.
（4）Prepare quantum dot sensitization solar battery device：S and Na are weighed according to a certain percentage2S, is dissolved in deionization
In water, Na2The control of S concentration is 1.5 mol/L, and the control of S simple substance is 1.5 mol/L, obtains liquid electrolyte, is added dropwise in step
（3）In the quantum dot sensitized light anode of gained, electrolyte is allowed to be diffused into the working portion of whole electrode using solution diffusion.
（5）CuS electrodes are covered to electrolyte, with clip by light anode together with being fixed to electrode, obtain quantum dot
Solar cell.
Test the Ag obtained by the present embodiment2The performance of the quantum dot sensitized solar cells of Se：In room temperature environment, xenon lamp is used
Simulated solar irradiation, light intensity is 100 mW/cm2, effective illuminating area is 0.25 cm2When photoelectric transformation efficiency be 3.1%.
To sum up, dystopy absorption Ag provided by the present invention2The preparation method of the quantum dot sensitized solar cells of Se, compared to
The quantum dot solar cell prepared without ligand modified quantum dot sensitized solar cell and other modes, prepared amount
The photoelectric efficiency of the solar energy electrical part of son point sensitization is higher.Therefore, method provided by the present invention is not only simple to operate, into
This is cheap, and the photoelectric properties of the quantum dot solar cell prepared using this method are improved.
Claims (10)
1. a kind of dystopy adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide, it is characterised in that including following step
Suddenly：
（1）Transparent FTO electro-conductive glass is cleaned, electrically conducting transparent substrate is obtained；
（2）Deionized water solution, the AgNO of sodium thiosulfate are prepared respectively3Deionized water solution, using aqueous phase be co-deposited legal system
Standby Ag2Se quantum dots, and be scattered in absolute ethyl alcohol, obtain Ag2Se quantum dot ethanol solutions；
（3）TiO is prepared using sol-gel process2Conductive film, ligand exchange is carried out by immersion way to conductive film surface,
The light anode through bifunctional molecule modified is obtained, Ag is sensitized using direct absorption method2Se quantum dots, form quantum dot sensitized light
Anode；
（4）To step（3）Electrolyte is added dropwise in the middle part of the quantum dot sensitized light anode of gained, allows electrolyte to expand using solution diffusion
It is scattered to the working portion of whole electrode；
（5）Electrode will be covered to step（4）Electrolyte on, with clip by light anode together with being fixed to electrode, the amount of obtaining
Son point solar cell.
2. dystopy as claimed in claim 1 adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide, its feature exists
In the step（1）In, cleaning way is：Deionized water, absolute ethyl alcohol, isopropanol ultrasonic vibration 15 ~ 20 are used successively
Min, after concussion terminates, using ozone oxidation surface organic group.
3. dystopy as claimed in claim 1 or 2 adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide, its feature
It is, using AgNO3Deionized water solution be used as silver-colored source, Na2SeSO3Deionized water solution be selenium source, polyvinyl pyrrole
Alkanone is used as surface stabilizer as dispersant, 3- mercaptopropionic acids；
Add surface stabilizer and dispersant into the deionized water solution of silver nitrate, and add ammoniacal liquor regulation pH to 10.1 ~
10.8, selenium source is added, the min of stirring reaction 5 ~ 10 centrifuges, gained solid quantum dot particle is scattered in into absolute ethyl alcohol
In solution, Ag is obtained2Se quantum dot ethanol solutions.
4. dystopy as claimed in claim 1 or 2 adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide, its feature
It is, the step（2）In, the deionized water solution concentration control of silver nitrate is 2 ~ 10 mmol/L；Sodium thiosulfate go from
The AgNO in sodium thiosulfate and silver nitrate solution in the sub- aqueous solution3Mol ratio be 1:(2~5)；The addition of dispersant with
The mass ratio of silver nitrate in silver nitrate solution is（0.15~1.7）：1；The addition and AgNO of surface stabilizer3Deionization
The volume ratio of the aqueous solution is（0.05~0.15）：1.
5. dystopy as claimed in claim 1 or 2 adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide, its feature
It is, the step（2）In, gained Ag2The concentration of Se quantum dot ethanol solutions is 4 ~ 10 mmol/L.
6. dystopy as claimed in claim 1 or 2 adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide, its feature
It is, the step（3）In, detailed process is：Using spin-coating method, by TiO2Slurry for rotary coating is in step（1）Cleaning is dry
Net FTO conductive glass surfaces, are allowed to form uniform ground film, are subsequently placed in Muffle furnace and are roasted through 400~450 DEG C of temperature
30~60min is burnt, room temperature is cooled to the furnace, obtains TiO2Light anode；By gained TiO2The acetonitrile of light anode immersion bifunctional molecule is molten
The h of liquid 24 ~ 36, uses washes of absolute alcohol after taking-up, immerse step（2）Gained Ag224 ~ 36 in Se quantum dot ethanol solutions
H, produces quantum dot sensitized light anode.
7. dystopy as claimed in claim 6 adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide, its feature exists
In the step（3）In, bifunctional molecule is at least one of mercaptopropionic acid, cysteine, hydrogen thioglycolic acid.
8. dystopy as claimed in claim 7 adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide, its feature exists
In the step（3）In, solvent is acetonitrile, when bifunctional molecule selects cysteine, from saturated solution；When selecting mercapto
When base propionic acid, hydrogen thioglycolic acid, it is 10 ~ 20% to control volumetric concentration.
9. dystopy as claimed in claim 1 or 2 adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide, its feature
It is, the step（4）In, electrolyte is polysulfide electrolyte, main component and concentration：Na2The control of S concentration for 1.5 ~
The control of 2.5 mol/L, S simple substance is 1.5 ~ 2.5 mol/L, is dissolved in deionized water.
10. dystopy as claimed in claim 1 or 2 adsorbs the preparation method of the quantum dot sensitized solar cell of silver selenide, it is special
Levy and be, the step（5）In, it is platinum electrode or CuS electrodes to electrode.
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