CN107034505A - A kind of Wafer electroplating device and electro-plating method - Google Patents
A kind of Wafer electroplating device and electro-plating method Download PDFInfo
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- CN107034505A CN107034505A CN201710207121.7A CN201710207121A CN107034505A CN 107034505 A CN107034505 A CN 107034505A CN 201710207121 A CN201710207121 A CN 201710207121A CN 107034505 A CN107034505 A CN 107034505A
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- annular barrier
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
- C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Automation & Control Theory (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of Wafer electroplating device, including it is loaded with the electroplating container of electroplate liquid, wafer, anode and electroplating power supply；The wafer is immersed in the electroplate liquid with the anode；The wafer is electrically connected by the electroplating power supply with the anode so that plating electric field is formed between the wafer and the anode；Wherein, the outside first annular barrier and outer second annular barrier concentric with the wafer are provided with the central area of the plating electric field.The present invention changes in electroplating process the resistance that resistance is transmitted in the outside between crystal column surface fringe region and anode by first annular barrier and outer second annular barrier on the outside of by being set respectively between wafer and anode, and drive wafer to rotate by electric rotating machine, it is achieved thereby that wafer plate surface electric field is uniformly distributed, the problem of solving crystal column surface Electric Field Distribution inequality and cause electroplated metallization uniformity, with the features such as simple to operate, uniformity is good, electroplating efficiency is high.
Description
Technical field
The present invention relates to semiconductor chip manufacturing technology field, more particularly to a kind of Wafer electroplating device and electro-plating method.
Background technology
Need to make a variety of gold on the wafer surface in the production process of semiconductor integrated circuit and other semiconductor devices
Belong to layer, so as to reach that electrical interconnection etc. is acted on.Plating is to make one of critical process of these metal levels, and wafer plating is by crystalline substance
Circle is placed in electroplate liquid, and voltage negative pole is applied into the good thin metal layer of pre-production on wafer（Seed Layer）, by positive polarity
Be applied to can dissolve or insoluble anode on, by electric field action so that metal ion deposition in plating solution is to wafer table
Face.
With the development of semiconductor technology, the Seed Layer of more and more thinner is applied to electroplating technology.However, thin Seed Layer
Problem is produced using the uniformity of electroplated metal layer on the seed layer can be caused.In order to improve the utilization rate of wafer, electroplating clamp
Electricity-linkingup point generally all only contacted with the Seed Layer of the outermost edge of wafer, the Seed Layer of crystal circle center and the seed of crystal round fringes
There is voltage difference in layer, and Seed Layer is thinner, and pressure difference is bigger.This may result in the rate of deposition in crystal circle center region much smaller than crystalline substance
The rate of deposition in rounded edge region so that the coating film thickness in crystal round fringes region is more than the coating film thickness in crystal circle center region, from
And influence the uniformity of technique.
Further, with the progress of electroplating process, seed layer thickness is increased, so as to cause crystal circle center and wafer side
Resistance between edge is continually changing so that the difference of rate of deposition is dynamic change, and the thus solution to problem is added
Bigger difficulty.
The content of the invention
The purpose of the present invention is to propose to a kind of Wafer electroplating device, by being set respectively between wafer and anode on the outside of the
One annular barrier and outer second annular barrier is so as to realize the outside changed between crystal column surface fringe region and anode
Transmit the resistance of resistance, so solve crystal column surface Electric Field Distribution it is uneven and the problem of influence electroplating evenness.
To reach above-mentioned purpose, the present invention proposes a kind of Wafer electroplating device, including is loaded with the plating appearance of electroplate liquid
Device, wafer, anode and electroplating power supply；The wafer is immersed in the electroplate liquid with the anode；The wafer passes through described
Electroplating power supply is electrically connected with the anode so that plating electric field is formed between the wafer and the anode；Wherein, the plating
The outside first annular barrier and outer second annular barrier concentric with the wafer are provided with the fringe region of electric field.
Preferably, the Wafer electroplating device further comprise outside the first source of supply, outside first pressure detection means,
Outside first pressure adjusting apparatus, the source of supply of outside second, outside second pressure detection means and outside second pressure adjustment dress
Put；Wherein, the first annular barrier in the outside is filled with the source of supply of outside first, outside first pressure detection successively
Put and the outside first pressure adjusting apparatus is connected, the outer second annular barrier is supplied with the outside second successively
Ying Yuan, the outside second pressure detection means and the outside second pressure adjusting apparatus are connected.
Preferably, the first annular barrier in the outside and the outer second annular barrier are ion membrane material.
Preferably, the inside filling outside first fluid of the first annular barrier in the outside, the outer second annular
The inside filling outside second fluid of barrier；The electrical conductivity of the outside first fluid and the outside second fluid is respectively less than
The electrical conductivity of electroplate liquid in electroplating container.
In addition, the present invention also provides the electric plating method of above-mentioned Wafer electroplating device, the electro-plating method includes：S001:
First annular barrier and outer second annular barrier on the outside of being set respectively between wafer and anode；S002：By electroplate liquid
It is contained in electroplating container, wafer and anode are immersed in electroplate liquid, and connects with electroplating power supply wafer and anode respectively so that
Plating electric field is formed between wafer and anode；Wherein, the contact point of electroplating power supply and wafer is the fringe region of wafer；S003：
Start electric rotating machine and drive wafer rotation.
Preferably, further comprise between the step S001 and the step S002：The outside is first annular
Barrier is connected with the source of supply of outside first, outside first pressure detection means and outside first pressure adjusting apparatus successively,
The outer second annular barrier successively with the source of supply of outside second, outside second pressure detection means and outside second pressure
Adjusting apparatus is connected.
Preferably, the first annular barrier in the outside and the outer second annular barrier are ion membrane material.
Preferably, the inside filling outside first fluid of the first annular barrier in the outside, the outer second annular
The inside filling outside second fluid of barrier；The electrical conductivity of the outside first fluid and the outside second fluid is respectively less than
The electrical conductivity of electroplate liquid in electroplating container.
Preferably, methods described further comprises：S004：Adjust described outer by the outside first pressure adjusting apparatus
The pressure of side first fluid, the outside second pressure adjusting apparatus adjusts the pressure of the outside second fluid, so that
The thickness of the first annular barrier in outside and the outer second annular barrier along plating direction of an electric field changes.
Preferably, the quantity of the first annular barrier in the outside and the outer second annular barrier be one, two
It is individual or multiple.
The beneficial effects of the invention are as follows：The situation of prior art is different from, Wafer electroplating device of the invention passes through in crystalline substance
Set the first annular barrier in outside and outer second annular barrier brilliant in electroplating process to change between circle and anode respectively
The resistance of resistance is transmitted in outside between circular surfaces fringe region and anode, and drives wafer to rotate by electric rotating machine, so that
Being uniformly distributed for wafer plate surface electric field is realized, crystal column surface Electric Field Distribution inequality is solved and causes electroplated metallization uniform
The problem of property.In addition, the present invention is held by outside first pressure detection means and the adjustment plating of outside second pressure detection means
The resistance of resistance is transmitted in outside in device in wafer current transmission path, even if crystal column surface seed layer resistance is in electroplating process
It is continually changing, can also realizes that the dynamic of crystal column surface electric field is uniformly distributed, with simple to operate, uniformity is good, electroplating efficiency is high
The features such as, being effectively guaranteed the coating speed and coating film thickness of crystal column surface difference in electroplating process has uniformity.
Brief description of the drawings
Fig. 1 is the structural representation of Wafer electroplating device in the prior art；
Fig. 2 is the electronic schematic diagram of Wafer electroplating device in the prior art；
Fig. 3 is the structural representation of the embodiment of Wafer electroplating device one of the present invention；And
Fig. 4 is the schematic flow sheet of the electro-plating method of the present invention.
Embodiment
The principle schematic diagram of Fig. 1 and Fig. 2, Fig. 1 for the Wafer electroplating device of prior art is referred to, electroplate liquid 1 is contained
In electroplating container 3, wafer 2 and anode 5 are immersed in electroplate liquid 1, and electroplating power supply 6 connects the wafer 2 as negative electrode respectively
With anode 5.In order to improve the utilization rate of wafer 2, in the prior art typically using fringe region the connecing as cathode current of wafer 2
Electronic schematic diagram in contact, whole circuit is as shown in Fig. 2 because there is resistance in the Seed Layer as conductive layer, therefore
There is resistance Ra between the fringe region of wafer 2 and the central area of wafer 2, between the fringe region A points and anode 5 of wafer 2
There is resistance Rb, another point B points of fringe region and the anode 5 of wafer 2 have resistance Rd, central area C and the anode 5 of wafer 2
Between there is resistance Rc.If wafer 2 is parallel with anode 5, resistance Rb, resistance Rd, resistance Rc are identicals in theory, but by
In the difference of the error and each point flow velocity of electroplate liquid 1, concentration of practical structures etc., three is differentiated.Due to seed on wafer 2
Ra points of the resistance of layer has removed a part of voltage, therefore whole electric field 4 is close to the local than in close wafer 2 of the fringe region of wafer 2
Heart district domain it is local intensive.Therefore, the uneven distribution of electric field 4 causes the surface of wafer 2 close to the place of fringe region than close
The local electroplating deposition speed of central area is fast, so as to have a strong impact on the uniformity of electroplating technology.
As shown in figure 3, the present invention provides a kind of Wafer electroplating device, including it is loaded with the electroplating container of electroplate liquid 101
103, wafer 102, anode 105 and electroplating power supply 106；Wafer 102 is immersed in electroplate liquid 101 with anode 105；Wafer 102 leads to
Cross electroplating power supply 106 to electrically connect with anode 105 so that form plating electric field 104 between wafer 102 and anode 105；Wherein, it is electric
Plate in the fringe region of electric field 104 provided with the outside first annular barrier 107 concentric with wafer 102 and outer second annular barrier
Hinder thing 108.
Please continue to refer to Fig. 3, in the present invention, Wafer electroplating device further comprises the first source of supply 111 of outside, outside
First pressure detection means 112, outside first pressure adjusting apparatus 113, the second source of supply of outside 114, the inspection of outside second pressure
Survey device 115 and outside second pressure adjusting apparatus 116；Wherein, the first annular barrier 107 in outside is supplied with outside first successively
Source 111, outside first pressure detection means 112 and outside first pressure adjusting apparatus 113 is answered to be connected, outer second annular barrier
Hinder thing 108 successively with the second source of supply of outside 114, outside second pressure detection means 115 and outside second pressure adjusting apparatus
116 are connected.
Wherein, the first annular barrier 107 in outside and outer second annular barrier 108 are ion membrane material.
Especially, in figure 3, the inside filling outside first fluid 109 of the first annular barrier 107 in outside, outside the
The electricity of the inside filling outside second fluid 110 of second ring barrier 108, outside first fluid 109 and outside second fluid 110
Conductance is respectively less than the electrical conductivity of the electroplate liquid 101 in electroplating container 103.
Also referring to Fig. 3 and Fig. 4, the present invention proposes a kind of electro-plating method of above-mentioned Wafer electroplating device, this method
Including：
S001：First annular barrier 107 and outer second annular barrier on the outside of being set respectively between wafer 102 and anode 105
Hinder thing 108；Wherein, the first annular barrier 107 in outside and outer second annular barrier 108 are hollow, and with wafer 102
With one heart；In the present embodiment, the first annular barrier 107 in outside and outer second annular barrier 108 are ion membrane material.
The inside filling outside first fluid 109 of the first annular barrier 107 in outside, the inside of outer second annular barrier 108 is filled out
Fill outside second fluid 110；The electrical conductivity of outside first fluid 109 and outside second fluid 110 is respectively less than in electroplating container 103
Electroplate liquid 101 electrical conductivity；
S002：By the first annular barrier 107 in outside successively with the first source of supply of outside 111, outside first pressure detection means
112 and outside first pressure adjusting apparatus 113 be connected, outer second annular barrier 108 successively with the source of supply of outside second
114th, outside second pressure detection means 115 and outside second pressure adjusting apparatus 116 are connected；
S003：Electroplate liquid 101 is contained in electroplating container 103, wafer 102 and anode 105 are immersed in electroplate liquid 101, and
Wafer 102 and anode 105 are connected respectively with electroplating power supply 106, so that forming plating electricity between wafer 102 and anode 105
Field 104；Wherein, the contact point of electroplating power supply 106 and wafer 102 is the fringe region of wafer 102；
S004：Starting electric rotating machine M drives wafer 102 to rotate；In this step, due to outside first fluid 109 and outside
The electrical conductivity of two fluids 110 is respectively less than the electrical conductivity of the electroplate liquid 101 in electroplating container 103 so that the fringe region of wafer 102 is arrived
The outside transmission resistance of anode 105 is more than the central area of wafer 102 to the transmitted inwards resistance between anode 105；Electric rotating machine M
Wafer 102 is driven to rotate, it is ensured that the transmitted inwards resistance of the difference of the fringe region of wafer 102 to anode 105 is obtained
Increase, this just weaken the intensity of plating electric field 104 fringe region and cause whole plating electric field 104 distribution produce it is uniform
Effect.In order to reach more preferable effect, the first annular barrier 107 in outside, outer second annular barrier 108 quantity can root
According to be actually needed be set to one, it is two or more.
S005：The pressure of outside first fluid 109 is adjusted by outside first pressure adjusting apparatus 113, outside second is pressed
The pressure of the adjustment of force adjusting device 116 outside second fluid 110, so that the first annular barrier 107 in outside and outside the
Thickness of the second ring barrier 108 along plating electric field 104 direction changes.In this step, even if the surface seed of wafer 102
Layer resistance be continually changing in electroplating process, also can according to actual conditions dynamically adjustment the fringe region of wafer 102 to anode 105 it
Between outside transmit resistance resistance, so as to realize that the dynamic of crystal column surface electric field is uniformly distributed
The present invention Wafer electroplating device by between wafer and anode respectively set on the outside of first annular barrier and outside
Second annular barrier changes the resistance that resistance is transmitted in the outside in electroplating process between crystal column surface fringe region and anode,
And drive wafer to rotate by electric rotating machine, it is achieved thereby that being uniformly distributed for wafer plate surface electric field, solves wafer table
Face Electric Field Distribution is uneven and the problem of cause electroplated metallization uniformity.In addition, the present invention passes through outside first pressure detection means
And the resistance of resistance is transmitted in the outside in outside second pressure detection means adjustment electroplating container in wafer current transmission path, i.e.,
Crystal column surface seed layer resistance is continually changing in electroplating process, can also realize that the dynamic of crystal column surface electric field is uniformly distributed,
With the features such as simple to operate, uniformity is good, electroplating efficiency is high, crystal column surface difference in electroplating process is effectively guaranteed
Coating speed and coating film thickness have uniformity.
Here description of the invention and application be illustrative, be not wishing to limit the scope of the invention to above-described embodiment
In.The deformation and change of embodiments disclosed herein are possible, real for those skilled in the art
The replacement and equivalent various parts for applying example are known.It should be appreciated by the person skilled in the art that not departing from the present invention
Spirit or essential characteristics in the case of, the present invention can in other forms, structure, arrangement, ratio, and with other components,
Material and part are realized.In the case where not departing from scope and spirit of the present invention, embodiments disclosed herein can be entered
The other deformations of row and change.
Claims (10)
1. a kind of Wafer electroplating device, it is characterised in that the electroplating container including being loaded with electroplate liquid, wafer, anode and plating
Power supply；The wafer is immersed in the electroplate liquid with the anode；The wafer passes through the electroplating power supply and the anode
Electrical connection so that plating electric field is formed between the wafer and the anode；Wherein, set in the fringe region of the plating electric field
There are the first annular barrier in the outside concentric with the wafer and outer second annular barrier.
2. Wafer electroplating device according to claim 1, it is characterised in that the Wafer electroplating device further comprises outer
The source of supply of side first, outside first pressure detection means, outside first pressure adjusting apparatus, the source of supply of outside second, outside
Two pressure-detecting devices and outside second pressure adjusting apparatus；Wherein, the first annular barrier in the outside successively with it is described outer
The source of supply of side first, the outside first pressure detection means and the outside first pressure adjusting apparatus are connected, described outer
The annular barrier in side second successively with the source of supply of outside second, the outside second pressure detection means and the outside the
Two pressure regulation devices are connected.
3. Wafer electroplating device according to claim 2, it is characterised in that the first annular barrier in outside and described
Outer second annular barrier is ion membrane material.
4. Wafer electroplating device according to claim 2, it is characterised in that the inside of the first annular barrier in outside
Filling outside first fluid, the inside filling outside second fluid of the outer second annular barrier；The outside is first-class
The electrical conductivity of body and the outside second fluid is respectively less than the electrical conductivity of the electroplate liquid in electroplating container.
5. a kind of electro-plating method of Wafer electroplating device according to claim 1 ~ 4, it is characterised in that the electro-plating method
Including：
S001:First annular barrier and outer second annular barrier on the outside of being set respectively between wafer and anode；
S002：Electroplate liquid is contained in electroplating container, wafer and anode are immersed in electroplate liquid, and connected respectively with electroplating power supply
Connect wafer and anode so that plating electric field is formed between wafer and anode；Wherein, the contact point of electroplating power supply and wafer is wafer
Fringe region；
S003：Start electric rotating machine and drive wafer rotation.
6. electro-plating method according to claim 5, it is characterised in that between the step S001 and the step S002
Further comprise：
By the first annular barrier in the outside successively with the source of supply of outside first, outside first pressure detection means and outside
One pressure regulation device is connected, the outer second annular barrier successively with the source of supply of outside second, outside second pressure
Detection means and outside second pressure adjusting apparatus are connected.
7. electro-plating method according to claim 6, it is characterised in that the first annular barrier in outside and the outside
Second annular barrier is ion membrane material.
8. electro-plating method according to claim 7, it is characterised in that the inside filling of the first annular barrier in outside
Outside first fluid, the inside filling outside second fluid of the outer second annular barrier；The outside first fluid and
The electrical conductivity of the outside second fluid is all higher than the electrical conductivity of the electroplate liquid in electroplating container.
9. electro-plating method according to claim 8, it is characterised in that methods described further comprises：
S004：The pressure of the outside first fluid, the outside second are adjusted by the outside first pressure adjusting apparatus
Pressure regulation device adjusts the pressure of the outside second fluid, so that the first annular barrier in the outside and described outer
Thickness of the annular barrier in side second along plating direction of an electric field changes.
10. electro-plating method according to claim 5, it is characterised in that the first annular barrier in outside and described outer
The quantity of the annular barrier in side second is one, two or more.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710207121.7A CN107034505B (en) | 2017-03-31 | 2017-03-31 | A kind of Wafer electroplating device and electro-plating method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710207121.7A CN107034505B (en) | 2017-03-31 | 2017-03-31 | A kind of Wafer electroplating device and electro-plating method |
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| CN107034505A true CN107034505A (en) | 2017-08-11 |
| CN107034505B CN107034505B (en) | 2019-02-05 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110184641A (en) * | 2018-07-27 | 2019-08-30 | 新阳硅密（上海）半导体技术有限公司 | The electro-plating method of electroplanting device |
| CN114262927A (en) * | 2021-11-25 | 2022-04-01 | 绍兴同芯成集成电路有限公司 | Electroplating device and electroplating method for substrate |
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| US20100032303A1 (en) * | 2006-08-16 | 2010-02-11 | Novellus Systems, Inc. | Method and apparatus for electroplating including remotely positioned second cathode |
| KR101020078B1 (en) * | 2010-10-20 | 2011-03-09 | 주식회사 티케이씨 | Apparatus for electroplating substrate |
| US8147660B1 (en) * | 2002-04-04 | 2012-04-03 | Novellus Systems, Inc. | Semiconductive counter electrode for electrolytic current distribution control |
| CN102560586A (en) * | 2012-02-08 | 2012-07-11 | 南通富士通微电子股份有限公司 | Electroplating method |
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| JPH1096097A (en) * | 1996-09-24 | 1998-04-14 | Hitachi Cable Ltd | Electroplating device |
| US8147660B1 (en) * | 2002-04-04 | 2012-04-03 | Novellus Systems, Inc. | Semiconductive counter electrode for electrolytic current distribution control |
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| CN110184641A (en) * | 2018-07-27 | 2019-08-30 | 新阳硅密（上海）半导体技术有限公司 | The electro-plating method of electroplanting device |
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| CN114262927A (en) * | 2021-11-25 | 2022-04-01 | 绍兴同芯成集成电路有限公司 | Electroplating device and electroplating method for substrate |
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