CN107004630A - System and method for winding porous silicon formation entirely - Google Patents
System and method for winding porous silicon formation entirely Download PDFInfo
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- CN107004630A CN107004630A CN201580067272.6A CN201580067272A CN107004630A CN 107004630 A CN107004630 A CN 107004630A CN 201580067272 A CN201580067272 A CN 201580067272A CN 107004630 A CN107004630 A CN 107004630A
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- 229910021426 porous silicon Inorganic materials 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 14
- 238000004804 winding Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 199
- 239000006227 byproduct Substances 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 32
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 19
- 238000003487 electrochemical reaction Methods 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 13
- 238000002048 anodisation reaction Methods 0.000 claims description 12
- 239000000376 reactant Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 20
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 13
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000012636 effector Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910001868 water Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229920001821 foam rubber Polymers 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 125000002619 bicyclic group Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 239000007785 strong electrolyte Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
Abstract
The method and system for winding porous silicon formation entirely is provided herein.In some embodiments, it can include for winding the substrate holder of porous silicon formation entirely：Main body, first edge of the main body along main body has tapered opening, and wherein tapered opening is configured as the byproduct gas produced during porous silicon of the release on the substrate supported by substrate holder is formed；First vacuum passage, first vacuum passage is formed in main body and extends to the first surface of main body；And first potted component, first potted component is arranged on the first surface of main body and is fluidly coupled to the first vacuum passage, wherein when substrate is arranged on the first potted component, the first potted component supporting substrate.
Description
Technical field
The embodiment of present disclosure is usually related to semiconductor processes, and more particularly relates to form porous
The method and apparatus of silicon layer.
Background technology
Silicon metal (including polysilicon and monocrystalline silicon) is the topmost absorber material that commercially available photovoltaic (PV) is applied
Material, occupies the remote of solar energy PV markets and surpasses 80% at present.Formed monocrystalline silicon membrane and release or transmission growth semiconductor (for example,
Monocrystalline silicon) there are different known methods in layer.Whatsoever method, a large amount of, the high productive value with releasing layer formation it is low into
The inexpensive epitaxial silicon deposition technique of this method is the prerequisite for widely using silicon solar cell.
Porous silicon (Porous Sil1con；PS it is the uncharted field with expanded application prospect) to be formed.Porous silicon passes through
Appropriate doping carrys out chemical etching silicon (SI) template substrate and generated in electrolysis bath of liquid.Electrolyte for porous silicon is：Fluorine
Change hydrogen (HF) (49% in usual H20), isopropanol (IPA) (and/or acetic acid) and deionized water (DI H20).IPA (and/or second
Acid) serve as surfactant and auxiliary agent in being formed uniformly of porous silicon.Such as some salts of additional additive can be for increasing
The electric conductivity of strong electrolyte, so that by reducing thermal losses and power attenuation caused by resistance loss.
Porous silicon already functions as sacrifice layer in MEMS and related application, and wherein substrate and products therefrom is than solar energy PV
Cost tolerance limit with higher per unit area.Generally, porous silicon is in more simple and smaller monobasal electrochemical treatments
Produced on chamber, simpler and smaller single substrate electrochemical processing chamber has relatively low on smaller substrate area occupied
Yield.At present, and in the absence of the commercially available porous silicon device for allowing high yield, cost-efficient porous silicon to manufacture.In solar energy
The feasibility of technology in PV applications is the ability for depending on extensive (under more inexpensive) industrialization process, so as to need hair
Exhibition is very low to possess cost, the porous silicon manufacture device of high productivity.
Another prime cost is to originate silicon template substrate in itself.Originate silicon template substrate can high doped boron it is many to control
Hole silicon property, such as, for example, thickness and includes the porosity of pore size, distribution and density.Reduce one of template cost
Method is behind repairing substrate surface after epitaxial layer is divested at the top and bottom of template substrate and solution edge irregular problem
Repeatedly reuse template.In addition, the part of substrate edges can not be anodised during batch processing, cause at substrate edges
There is no porous silicon layer to be formed.Epitaxial layer is locked in the part by the missing of the porous silicon layer formed on substrate edge part
On.
In order to reuse such substrate with broken edge, it is necessary to spend extra cost to carry out at additional edge
Reason.Conventional edge machinery inclined-plane and edge polishing are in substrate manufacture for providing the circle for various devices and integrated circuit
Semiconductor substrate.This method is highly developed in the smooth edges quality of high yield, however, it is considerably expensive.It is right
In PV applications, square substrate is generally used for handling PV units, but surface and edge quality are far inferior to circular semiconductor substrate.
Thus, the present inventor has been provided for the side for largely forming the porous silicon layer with high yield with the cost of reduction
Method and equipment.
The content of the invention
The method and system for winding porous silicon formation entirely is provided herein.In some embodiments, for complete
The substrate holder of winding porous silicon formation can include：Main body, the main body has tapered opening along the first edge of main body,
Wherein tapered opening is configured as the by-product produced during porous silicon of the release on the substrate supported by substrate holder is formed
Thing gas；First vacuum passage, first vacuum passage is formed in main body and extends to the first surface of main body；And the
One potted component, first potted component is arranged on the first surface of main body and is fluidly coupled to the first vacuum passage, its
In when substrate is arranged on the first potted component, the first potted component supporting substrate.
In some embodiments, it can include for winding the electrochemical reaction system of porous silicon formation entirely：Reactive tank,
The reactive tank is configured as storage liquid chemical solution with the one or more substrates of anodization；Multiple substrate holders, it is described
Multiple substrate holders are arranged in reactive tank, and each retainer is configured as when substrate is arranged on retainer via vacuum
Clamping force keeps substrate；First electrode, the first end for being arranged on reactive tank；Second electrode, the second electrode is set
In the second end relative with first end of reactive tank；And chemical overflow system (chemical overflow
System), the chemical overflow system is configured as collecting overflow reactant chemicals during processing substrate.
In some embodiments, it can include for winding the method for porous silicon entirely：Multiple silicon substrates are arranged on pair
Answer on multiple substrate holders, multiple substrate holders are arranged in reactive tank, reactive tank is filled with electrochemical reaction system
Hydrogen fluoride (HF) solution；Via vacuum chuck by each first side for being maintained at counterpart substrate retainer in multiple silicon substrates
On；The electric current through hydrogen fluoride (HF) solution is provided using the positive electrode and negative electrode being arranged in reactive tank；In multiple silicon substrates
Form the first porous silicon layer on each first surface in plate, the wherein first surface of silicon substrate is towards negative electrode；Again it is fixed
It is each so that the second surface of silicon substrate is exposed under negative electrode in the multiple silicon substrates in position；And in the second surface of silicon substrate
The second porous silicon layer of upper formation.
It following describes other and further outer embodiment of present disclosure.
Brief description of the drawings
By reference to the illustrative embodiment of the present disclosure described in accompanying drawing, it is possible to understand that general briefly above
The embodiment for the present disclosure stated and discussed in more detail below.It should be noted, however, that accompanying drawing is only illustrated in the disclosure
The exemplary embodiment of appearance, and therefore it is not interpreted as limiting that scope of the present disclosure because present disclosure can allow it
His equally effective embodiment.
Figure 1A -1D depict according to some embodiments of present disclosure be used for substrate is completely covered using porous silicon
The technique on surface and the general overview of substrate carrier component.
Fig. 1 E are depicted covers substrate surface according to the utilization porous silicon that is used for of some embodiments of present disclosure
Another embodiment of substrate carrier component.
Fig. 2 depicts the multiple substrates for including being used to carry out batch processing of some embodiments according to present disclosure
The chemical bath reactive tank of carrier module.
Fig. 3 depicts the top view of the substrate holder of some embodiments according to present disclosure.
Fig. 4 and Fig. 5 depict according to the alternate embodiments of present disclosure be used for base is completely covered using porous silicon
The technique and two plane type substrate holder of plate surface.
Fig. 6 is depicted is sent to substrate in chemical bath according to some embodiments of present disclosure by multiple substrates
The transportation system of retainer.
In order to make it easy to understand, in the case of as far as possible, indicate to have in accompanying drawing using same reference numbers is identical
Element.Accompanying drawing is not drawn to scale and can simplified for clarity.It is contemplated that element and the spy of embodiment
Other embodiment can be advantageously incorporated into by levying, without repeating in addition.In addition, in the document, such as first and second, top and
The relational terms of bottom, front and rear etc. can be only used for distinguishing an entity or action with another entity or action
Come, without requiring or implying this relation of any reality or the order between this entity or action.
Embodiment
The embodiment that a large amount of production porous silicons manufacture tool and method is provided herein.In at least some embodiments
In, creative method and apparatus disclosed herein can be provided advantageously at low cost to be had completely in whole substrate surface
Porous silicon layer covering high yield porous silicon layer, the whole substrate surface can include substrate preceding surface and rear surface with
And substrate edges chamfered region.In addition, being advantageously enhanced simultaneously in template substrate two according to the embodiment of present disclosure
The manufacturability of one or more epitaxial layers is generated on the top of the porous silicon layer of side.Therefore, embodiments of the present invention are favourable
Ground improves extension yield, and extension yield is the major part for possessing cost for producing substrate outside PV.In addition, according to this public affairs
The embodiment for opening content provides improvement method for sealing edge, and the improvement method for sealing edge advantageously avoid starting template
The problem of inferior edge quality of substrate, and especially to remove the extension residue in the locking of the top end of substrate edges
Rehabilitation cost reduction.
Figure 1A -1D depict the technique and substrate carrier component for all substrate surfaces to be completely covered using porous silicon
101 general overview.This technique is also referred to as winding (All Wrap Around entirely；AWA) porous silicon (Si) technique.Figure 1A is retouched
Substrate carrier component 101 is painted, in some embodiments, substrate carrier component includes substrate 102, and substrate is arranged on substrate holding
On device 110, substrate back is sealed via the one or more vacuum passages 114 and potted component 112 of vacuum chuck.Vacuum is led to
Road 114 extends to the substrate support surface of substrate holder 110.In some embodiments, vacuum passage 114 is in substrate holder
Set around the periphery of 110 substrate support surface.Vacuum passage 114 is fluidly coupled to potted component 112.Potted component 112
Substrate 102 is supported and kept by vacuum clamping force.In some embodiments, electrostatic chuck (electrostat1c
chuck；ESC it) can be used for keeping substrate via electrostatic force rather than vacuum chuck.
Substrate 102 and substrate holder 110 can be used in processing chamber housing or chemical bath.Substrate 102 has the first table
Face 104, first surface 104 is also referred to as initially exposed to the preceding surface of the processing environment of processing chamber housing or chemical bath herein.Substrate 102
Also there is second surface 106, second surface 106 is also referred to as initially not exposed to the processing environment of processing chamber housing or chemical bath herein
Back surface.Figure 1A is depicted in substrate 102 of any porous silicon on preceding surface 104 or back surface 106 before formation/anodization.
In fig. ib, porous silicon layer 105 formed on exposed first surface 104 (that is, anodization first surface 104) and
Form one plane type porous silicon substrate 102.In some embodiments, porous silicon layer 105 using hydrofluoric acid (HF) bath and via
The first surface 104 of substrate 102 is exposed under electric charge and formed on the first surface 104 of substrate 102 by electrode 116,118.
In some embodiments, porous silicon layer 105 is being subjected to negative electricity via electrode 116 (for example, negative electrode or negatively charged electrode)
Formed on the surface of lotus.In some embodiments, porous silicon layer 105 be formed on all exposed surfaces (for example, preceding surface,
End face and some back surfaces close to the edge more than potted component 112 of substrate 102).
In fig. 1 c, the one plane type porous silicon substrate 102 from Figure 1B and the silicon the of the non-anodization as exposed surface
Two surfaces 106 are put together (for example, upset/rotational substrate 102).In Fig. 1 D, porous silicon layer 107 is in the second exposed table
(that is, anodization second surface 106) forms and forms two plane type porous silicon substrate 102 on face 106.In some embodiments,
Using the same process described above for Figure 1B, porous silicon layer 107 is formed on the second surface 106 of substrate 102.
In some embodiments, front and back porous silicon formation occurs in different technology grooves.The guarantor of each groove
The geometry of holder can change.Specifically, the substrate holder 110 shown in Figure 1A -1D can be used in exposure
First surface 104 on formed porous silicon layer 105.In Figure 1A -1D, substrate exposes the inclined-plane of substrate away from retainer
To allow electric current to flow through surface, so as to cause porous silicon to be formed.However, in some embodiments, in fig. ie shown
Two class substrate holders 120 can use to form porous silicon layer 107 on exposed second surface 106 in the second groove.In figure
In 1E, substrate 102 is recessed into recessed so that flowing through the current minimized of inclined-plane in scrobicula (shallow pocket) 122.This prevents
Growth of the unnecessary porous silicon on the inclined-plane of substrate is stopped.
Fig. 2 describes the electrochemical reaction groove 100 for the multiple substrate carrier components 101 for including being used for batch processing (herein
Claim processing chamber housing or reactive tank).In some embodiments, substrate 102 is p-type or P++ silicon substrates.In some embodiments
In, the substrate p-type dopant for substrate has the boron volume more than 1e7-8/cm3.In some embodiments, substrate 102
Can be square or circular substrate.Substrate 102 is clamped on the back side of substrate 102 by vacuum and is placed on anodization electrochemistry
On the retainer 110 in liquid chemical solution 230 in reactive tank 100.In some embodiments, in electrochemical reaction groove
Chemical solution in 100 can be made up of HF, isopropanol (IPA) and/or H20.In some embodiments, other solution also can use
Formed in anodization/porous silicon, such as HF/ ethanol/deionized water (DIW), HF/ acetic acid/DIW, HF/IPA or HF/ ethanol.
Substrate holder 110 includes leading to the tapered opening 232 of chemical solution 230, and tapered opening 232 advantageouslys allow for hydrogen
Byproduct gas 228 effectively discharges to flash to air upwards in chemical solution, and helps to prevent hydrogen byproduct gas
228 stops may cause the anode current of uneven porous silicon layer.During anodization as shown in Figure 2, hydrogen byproduct gas
228 bubbles are effectively discharged by making the overflow of chemical solution 230 and being circulated in chemical solution 230.Anode current is by two
Electrode 116,118 is provided.In some embodiments, electrode 116,118 can be formed by platinum (Pt).In other embodiments,
The doped silicon that electrode 116,118 can be coated by diamond or diamond-like-carbon or the boron-doped diamond film with metal backing
Formed.In DC and/or AC, electrode 116,118 can be located at two ends of electrochemical reaction groove 100.Exposed to negative electrode
Silicon substrate and HF react to remove and (that is, etch) silicon atom.Etch process leaves the nanosized room for being referred to as hole.
As shown in Fig. 2 accessory substance of the hydrogen byproduct gas 228 for the anode reaction above silicon substrate.In some embodiments
In, desired hole thickness, hole density (porosity) and the hole formed on the substrate surface (for example, 105 and 107) of anodization is big
I by control flow through the anode current of whole substrates between two electrodes 116,118 and on each silicon substrate
Formed evenly.In some embodiments, each in substrate 102 can be electrically isolated from one by potted component 112, to contribute to control
System flows through the anode current of whole substrates between two electrodes 116,118.Non-conducting encapsulation element 112 tends in groove
Each stage between flow transmission, so as to prevent electric current from bypassing chip.That is, identical porous silicon layer can pass through controlling stream
Cross the anode current for the whole substrates being located between two electrodes 116,118 and formed on each silicon substrate.In some implementations
In mode, porous silicon layer can be formed by reversing directional current on the back side of each substrate.Change anode current or modulation
Electric current can realize multiple layers of formation of porous silicon, and porous silicon is typically used as separation layer so that outer on the top of porous silicon layer
Prolong layer stripping.
As shown in Fig. 2 multiple substrate carrier components 101 (each including substrate 102 and substrate holder 110) are arranged on sun
In pole bath (that is, chemical solution 230).Same current is provided through all substrates 102, substrate 102 passes through via potted component 112
At each substrate holder 110 sealing and it is electrically isolated from one.Potted component 112 can be formed from an electrically-insulative material.Therefore, it is porous
On the substrate 102 on the surface towards the negative electrode 116 and substrate edges area including tapered opening 232 of silicon layer 105,107
Formed on domain.In some embodiments, fraction (that is, towards the substrate surface of the positive electrode 118) quilt at the back side of silicon substrate
Anodization is to form porous silicon layer.
The bubble of hydrogen byproduct gas 228 is formed the by-product of the electrochemical reaction between HF on both sides of the substrate and silicon
Thing, so as to produce hydrogen on the surface of the substrate.In some embodiments, the bubble of hydrogen byproduct gas 228 accumulates in substrate guarantor
The corner of upper interface surface between the edge of holder 110 and substrate 102.The bubble of hydrogen byproduct gas 228 gathered is condensed into
The more air pocket of bucking current flowing, so that the electric charge that the screen effect caused by being gathered because of hydrogen is caused is insufficient,
Produce the thinner porous silicon in the hole with compared with low-density.In order to reduce the problem of being caused by the bubble of hydrogen byproduct gas 228, base
The side of plate retainer 110 is tapered opening 232.Tapered opening 232 at the top of substrate holder 110 allows hydrogen by-product
The more effective ventilation of the bubble of thing gas 228.
Fig. 3 descriptions include potted component 112, vacuum passage 114 and show the substrate holder 110 of tapered opening 232
Top view.In some embodiments, as shown in Figure 3, potted component 112 can be double seal ring (for example, double O-rings or flat
Flat ring).Although Fig. 3 describes the square substrate retainer 110 for keeping square substrate, other shapes substrate is kept
Device 110 and substrate can be used together with matching potted component (for example, circular substrate with retainer etc.).
In other embodiments, potted component 112 is the bicyclic of polymer or rubbery foam.Rubber foam seal is excellent
In resilient O-ring seals, because rubber foam seal needs low compression force and therefore less vacuum meter area.Whole
Seal can be accommodated in the edge exclusion area of substrate, rather than solar cell.Which results in active region
Lower EPI defect levels.Meanwhile, small geometry seal reduces the electric current masking effect of retainer so that substrate can be in bath
In be placed closely together and while keeping uniform current to be distributed.
In some embodiments, chemical overflow system 250 is included in electrochemical reaction groove 100, for solve by
The problem of bubble of hydrogen byproduct gas 228 of accumulation causes.Chemical overflow system 250 includes overflow receiver 224, and overflow is received
Device 224 has the entrance 252 being arranged in each position in electrochemical reaction groove 100.It is anti-that overflow receiver 224 collects overflow
Answer chemical substance and fill them into overflow bath 212.In some embodiments, overflow receiver, which is placed exactly in, bathes following.Come
Keep isolation from the overflow of each section of bath because they overflow bath and under drop down onto receiver.This minimum connects through overflow
Receive the drain current path between bath section and electrode of device.Overflow reactant chemicals it is monitored and be processed into appropriate chemistry into
Point level (being discussed below), and returned by resistance pumping system 254 from the bottom of electrochemical reaction groove 100 through manifold 210
Return to chemical solution 230.In some embodiments, resistance pumping system 254 includes pump 216, valve 218, conduit 220, discrimination
Pipe 210 and conduit 222.HF/IPA sensors and add-on system (spiking system) 214 are to control HF/IPA chemicals
Matter synthesis rate.HF/IPA sensors and add-on system 214 include the induction monitoring of monitoring chemical solution 230 and overflow bath 212
Device.The chemical substance level monitored based on chemical solution 230 and/or overflow bath 212, HF/IPA sensors and add-on system
214 are in the necessary chemical constituent of supply under aspiration level to keep chemical solution 230 and/or overflow to bathe 212 chemical substances
To form even porous silicon layer.Resistance pumping system 254 is also used for from bath inclining when substrate is loaded and unloaded in electrochemical reaction groove 100
Let out chemical substance.
In some embodiments, substitute and substrate 102 is overturn on retainer 110, as shown in Fig. 4 and Fig. 5, can make
With two plane type substrate holder 410.Two plane type substrate holder 410 on each side of retainer include potted component 412,
413.Vacuum passage 414,415 each is coupled in potted component 412,413, to provide the vacuum for keeping substrate 102
Clamping force.In this way, as shown in figure 4, porous silicon layer 105 is formed on exposed first surface (for example, towards negative electrode
118 side).In Figure 5, substrate 102 is moved to the another side of two plane type substrate holder 410, and reverses electrode
116th, 118 polarity to show negative electrode on the left side in Figure 5.Two plane type substrate holder 410 provides double-face vacuum card
Tightly, this double-face vacuum clamping can be operating independently, and substrate is first placed on the retainer on the right so as in substrate
One plane type porous silicon layer is formed on before towards negative electrode 116.Anodization substrate is not by mechanical finger clamping and by mechanical finger
Lifting, is transferred on the opposite side equipped with another clamping system of retainer.When changing polarity of electrode, as shown in figure 5, positive
Polarize substrate second surface to form porous silicon layer.
Fig. 6 describes transportation system 600, and transportation system 600 transports multiple substrates 102 into electrochemical reaction groove 100
Substrate holder 110.All substrates 102 are raised by transfer robot 602 from carrier 604.Each substrate must be by conveyer
The finger fixing of tool hand 602, but simultaneously transmit multiple substrates into bath to increase yield.
In some embodiments, transportation system includes a set of compatible end effector for being used to keep chip.Compatible end
Portion's actuator is aligned to the feature in substrate holder automatically.It is good to ensure that this causes chip to be accurately positioned to potted component
Sealing, and be accurately positioned to the wall of bath to ensure that uniform current flows through substrate inclined-plane.Which results in porous silicon around the oblique of substrate
Face is formed uniformly.Compatible end effector enables identical loading machine to load multiple positions in multiple baths or identical bath, and
Cumbersome alignment procedure is not needed.
In some embodiments, substrate holder 110 includes the section outside seal of flexible partition.This is flexible
Section allows end effector that substrate is pressed into seal, and ensures that sealing surfaces can conform to the flat table of substrate
Face.In some patterns of present embodiment, rigid plate presses the back side of retainer to force sealing plane to be put down during loading
It is smooth against substrate.In the embodiment of the seal with compliance foam, a large amount of compression foams are ensured during loading
The compliance of seal.
Although foregoing teachings are related to embodiments of the present invention, in the case where not departing from the base region of the present invention,
The other embodiment and further embodiment of the present invention can be designed.
Claims (15)
1. a kind of substrate holder, including：
Main body, first edge of the main body along the main body has tapered opening, wherein the tapered opening is configured as releasing
The byproduct gas that the porous silicon being placed on the substrate supported by the substrate holder is produced during being formed；
First vacuum passage, first vacuum passage is formed in the main body and extends to the first surface of the main body；
And
First potted component, first potted component is arranged on the first surface of the main body and is fluidly coupled to institute
The first vacuum passage is stated, wherein when the substrate is arranged on first potted component, the first potted component support
The substrate.
2. substrate holder as claimed in claim 1, wherein the potted component is double seal ring.
3. substrate holder as claimed in claim 2, wherein the potted component is double O-rings or double flat rings.
4. substrate holder as claimed in claim 1, wherein the potted component is formed from an electrically-insulative material.
5. substrate holder as claimed in claim 1, wherein when the substrate is arranged on the potted component, it is described close
Seal element and the substrate is kept by vacuum clamping force.
6. substrate holder as claimed in claim 5, wherein the substrate holder is configured as the substrate being maintained at
Upright position.
7. the substrate holder as described in any one of claim 1 to 5, wherein the first surface of the main body has just
Square contour is to support square substrate, and wherein described potted component is double flat rings with square profiles.
8. the substrate holder as described in any one of claim 1 to 5, wherein the first surface of the main body has circle
Shape profile is to support circular substrate, and wherein described potted component is double O-rings with circular contour.
9. the substrate holder as described in any one of claim 1 to 5, it further comprises：
Second vacuum passage, second vacuum passage be formed in the main body and extend to the main body with described first
The relative second surface in surface；And
Second potted component, second potted component is arranged on the second surface of the main body and is fluidly coupled to institute
The second vacuum passage is stated, wherein when the substrate is arranged in the second seal, the second seal support is described
Substrate.
10. a kind of electrochemical reaction system, including：
Reactive tank, the reactive tank is configured as storage liquid chemical solution with the one or more substrates of anodization；
Multiple substrate holders, the multiple substrate holder is arranged in the reactive tank, and each retainer is configured as
When substrate is arranged on the retainer substrate is kept via vacuum clamping force；
First electrode, the first electrode is arranged on the first end of the reactive tank；
Second electrode, the second electrode is arranged on the second end relative with the first end of the reactive tank；And
Chemical overflow system, the chemical overflow system is configured as collecting overflow reactant chemicals during processing substrate.
11. electrochemical reaction system as claimed in claim 10, wherein each substrate holder includes：
Main body, the main body has tapered opening in the first edge of the main body, and the main body is configured as release at place
The byproduct gas produced during reason；
Vacuum passage, the vacuum passage is formed in the main body and extends to the first surface of the main body；And
Potted component, the potted component, which is arranged on the first surface of the main body and is fluidly coupled to the vacuum, to be led to
Road, wherein when substrate is arranged on the potted component, the potted component supports the substrate.
12. electrochemical reaction system as claimed in claim 10, wherein the chemical overflow system includes：
Overflow receiver, the overflow receiver has the multiple entrances being arranged in the reactive tank, the overflow receiver
It is configured as receiving overflow reactant chemicals；
Overflow is bathed, and the overflow bath is coupled to the overflow receiver；And
Resistance pumping system, the resistance pumping system is coupled to the overflow bath and the reactive tank.
13. electrochemical reaction system as claimed in claim 12, wherein the resistance pump send system to be configured as treating
Overflow reactant chemicals blowback described in reactive tank.
14. electrochemical reaction system as claimed in claim 12, wherein the chemical overflow system further comprises chemical biography
Sensor and add-on system, the chemical sensor and add-on system are configured as that the liquid chemical solution and institute is monitored and controlled
State the chemical composition level of overflow reactant chemicals.
15. a kind of method for being used to wind porous silicon formation entirely, including：
Multiple silicon substrates are arranged on the multiple substrate holders of correspondence, the multiple substrate holder is arranged in reactive tank,
The reactive tank is filled with hydrogen fluoride (HF) solution of electrochemical reaction system；
Each in the multiple silicon substrate is maintained in the first side of counterpart substrate retainer via vacuum chuck；
Electric current through the hydrogen fluoride (HF) solution is provided using the positive electrode and negative electrode that are arranged in the reactive tank；
The first porous silicon layer is formed on each first surface in the multiple silicon substrate, wherein the silicon substrate is described
First surface is towards the negative electrode；
Reposition in the multiple silicon substrate it is each with by the second surface of the silicon substrate be exposed to the negative electrode under；
And
The second porous silicon layer is formed on the second surface of the silicon substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462090213P | 2014-12-10 | 2014-12-10 | |
| US62/090,213 | 2014-12-10 | ||
| PCT/US2015/064194 WO2016094271A1 (en) | 2014-12-10 | 2015-12-07 | System and method for all wrap around porous silicon formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107004630A true CN107004630A (en) | 2017-08-01 |
Family
ID=56108005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580067272.6A Pending CN107004630A (en) | 2014-12-10 | 2015-12-07 | System and method for winding porous silicon formation entirely |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20170317225A1 (en) |
| CN (1) | CN107004630A (en) |
| WO (1) | WO2016094271A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7358222B2 (en) * | 2019-12-06 | 2023-10-10 | 株式会社ディスコ | Plate-shaped object holder |
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| US20080149594A1 (en) * | 2006-06-16 | 2008-06-26 | Packer Engineering, Inc. | Apparatus and process for forming and handling porous materials |
| US8415555B2 (en) * | 2010-08-24 | 2013-04-09 | Corning Incorporated | Dimensional silica-based porous silicon structures and methods of fabrication |
| TWI625885B (en) * | 2013-01-07 | 2018-06-01 | 威廉馬許萊斯大學 | Combined electrochemical and chemical etching processes for generation of porous silicon particulates |
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- 2015-12-07 CN CN201580067272.6A patent/CN107004630A/en active Pending
- 2015-12-07 WO PCT/US2015/064194 patent/WO2016094271A1/en active Application Filing
- 2015-12-07 US US15/532,001 patent/US20170317225A1/en not_active Abandoned
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| US6202655B1 (en) * | 1996-11-28 | 2001-03-20 | Canon Kabushiki Kaisha | Anodizing apparatus and apparatus and method associated with the same |
| CN1227284A (en) * | 1997-12-26 | 1999-09-01 | 佳能株式会社 | Anodizing apparatus and method and porous substrate |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2016094271A1 (en) | 2016-06-16 |
| US20170317225A1 (en) | 2017-11-02 |
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