CN106997893A - 有机发光显示装置及其制造方法 - Google Patents
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Abstract
公开了一种有机发光显示装置及其制造方法,该有机发光显示装置提高了开口率。该有机发光显示装置包括:发光器件,所述发光器件被设置在基板的每个子像素处;像素电路,所述像素电路驱动所述发光器件;堤岸,所述堤岸提供在除了设置有所述像素电路的区域以外的其余区域处的第一发光区域和在设置有所述像素电路的所述区域处的第二发光区域;以及滤色器,所述滤色器被设置在所述第一发光区域和所述第二发光区域处,其中,包括在所述像素电路中的至少一个电极包括在所述第二发光区域处的透明导电层。
Description
技术领域
本发明涉及一种有机发光显示装置及其制造方法,更具体地,涉及一种提高开口率的有机发光显示装置及其制造方法。
背景技术
在屏幕上显示各种信息的显示装置是信息技术时代的核心技术。显示装置发展为变得薄、轻、便携且高性能。为此,诸如控制从有机发光层发出的光的量来显示图像的有机发光显示装置的平板显示装置因为减小了作为阴极射线管(CRT)的缺点的重量和体积而广受关注。作为自发光装置的有机发光二极管(OLED)装置具有低功耗、快速的响应时间、高照明效率、高亮度和宽视角。
在有机发光显示装置中,多个像素被布置成矩阵形式来显示图像。这里,每个像素包括发光器件和包括独立地驱动发光器件的多个晶体管的像素电路。
在有机发光显示装置中,当从有机发光器件生成的光被发射至基板的底部时,在设置有像素电路的区域处,包括在像素电路中的多个电极层由不透明材料形成,从而不能照射出从有机发光装置生成的光。因此,传统有机发光显示装置具有因通过像素电极所占区域而减小的开口率。另外,最近,由于补偿电路被设置在每个子像素中,因此难以确保开口率。
发明内容
因此,本发明涉及一种基本上消除了由于现有技术的限制和缺点而导致的一个或更多个问题的有机发光显示装置及其制造方法。
本发明的目的是提供一种提高开口率的有机发光显示装置及其制造方法。
本发明的其它优点、目的及特征部分地将在以下的说明书中进行阐述,并且部分地对于本领域技术人员而言在研读以下内容后将变得清楚,或者可以通过实施本发明而获知。通过在撰写的说明书及其权利要求书以及附图中具体指出的结构,可以实现和获得本发明的目的和其它优点。
为了实现这些目的和其它优点并且根据本发明的目的,如本文具体表达和广泛描述地,一种有机发光显示装置包括:堤岸,所述堤岸提供在除了设置有所述像素电路的区域以外的其余区域处的第一发光区域和在设置有所述像素电路的所述区域处的第二发光区域。所述有机发光显示装置包括设置在所述第一发光区域和所述第二发光区域处的滤色器和发光器件。包括在所述像素电路中的至少一个电极包括在所述第二发光区域处的透明导电层,由此提高开口率。
应理解的是,对本发明的以上概述和以下详述两者都是示例性和说明性的,并且旨在对所要求保护的本发明提供进一步的解释。
附图说明
附图被包括进来以提供对本发明的进一步理解,并且被并入本申请中且构成本申请的一部分,附图示出了本发明的实施方式并且与本说明书一起用于解释本发明的原理。在附图中:
图1是例示根据本发明的有机发光显示装置的截面图;
图2是例示在图1中示出的第一发光区域和第二发光区域的示图;
图3A、图3B、图3C、图3D、图3E、图3F、图3G、图3H、图3I和图3J是例示制造在图1中示出的有机发光显示装置的方法的截面图;以及
图4A、图4B、图4C和图4D是详细例示制造在图3D中示出的第一源极和第二源极、第一漏极和第二漏极、数据线和存储下部电极的方法的示图。
具体实施方式
现在将详细参照本发明的实施方式,在附图中例示了本发明的实施方式的示例。
图1是例示根据本发明的有机发光显示装置的截面图。
如图1所示,根据本发明,有机发光显示装置的红色子像素、绿色子像素和蓝色子像素中的每一个包括发光器件,包括发光器件130和独立地驱动该发光器件130的像素电路。像素电路包括开关薄膜晶体管150、驱动薄膜晶体管100和存储电容器140。
开关薄膜晶体管150基于扫描线(未示出)的扫描信号向驱动薄膜晶体管100的第二栅极106提供来自数据线DL的数据电压。开关薄膜晶体管150包括连接至扫描线的第一栅极156、连接至数据线DL的第一源极158、连接至第二栅极106的第一漏极160和第一有源层154。
驱动薄膜晶体管100基于在存储电容器140处所充入的驱动电压来控制从高电压线(图2中的VDDL)提供的电流以提供与驱动电压成比例的电流,从而驱动发光器件130。驱动薄膜晶体管100包括连接至第一漏极160的第二栅极106、连接至高电压线的第二源极108、连接至发光器件130的第二漏极110和第二有源层104。
开关薄膜晶体管150的第一栅极156和驱动薄膜晶体管100的第二栅极106分别与第一氧化物半导体层154和第二氧化物半导体层104交叠,而作为与第一栅极156和第二栅极106相同的图案的栅极绝缘图案112***置在第一栅极156和第二栅极106与第一有源层154和第二有源层104之间。第一栅极156和第二栅极106中的每一个可以具有包括选自由钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)、铜(Cu)或其合金组成的组中的至少一种的单层形式或多层形式,但不限于此。
第一有源层154和第二有源层104形成在栅极绝缘图案112上以分别与第一栅极156和第二栅极106交叠。因此,在第一源极158和第一漏极160之间以及在第二源极108和第二漏极110之间形成沟道。第一有源层154和第二有源层104中的每一个由金属氧化物形成或者由多晶硅或非晶硅形成,所述金属氧化物包括选自由Zn、Cd、Ga、In、Sn、Hf和Zr组成的组中的至少一种。
第一源极158经由穿过层间绝缘层116的第一源极接触孔164S连接至第一有源层154。第二源极108经由穿过层间绝缘层116的第二源极接触孔124S连接至第二有源层104。第一漏极160经由穿过层间绝缘层116的第一漏极接触孔164D连接至第一氧化物半导体层154。第二漏极110经由穿过层间绝缘层116的第二漏极接触孔124D连接至第二氧化物半导体层104。
第一漏极经由连接电极(未示出)电连接至驱动薄膜晶体管100的第二栅极106。
第二漏极110连接至由穿过保护层118的存储接触孔146暴露出的存储上部电极144。存储上部电极144连接至由穿过平整层128的像素接触孔120暴露出的阳极132。
存储电容器140被设置在第一发光区域EA1处。存储电容器140包括存储下部电极142和存储上部电极144,而保护层118***置在存储下部电极142和存储上部电极144之间。这里,存储下部电极142电连接至开关薄膜晶体管150的第一漏极160。存储下部电极142由层间绝缘层116上的透明导电材料绝缘式地形成。存储上部电极144电连接至驱动薄膜晶体管100的第二漏极110。存储上部电极144由保护层118上的透明导电材料形成。因此,构成存储电容器并且由透明导电材料形成的存储下部电极142和存储上部电极144被设置在第一发光区域EA1处,从而可以防止由于存储电容器140而导致的开口率下降。
发光器件130包括阳极132、形成在阳极132上的有机发光层134和形成在有机发光层134上的阴极136。
阳极132连接至由穿过平整层128的像素接触孔120暴露出的存储上部电极144,使得阳极132经由存储上部电极144电连接至第二漏极110。另外,当设置底部发光型有机发光显示装置时,阳极132由透明导电氧化物(TCO)形成。
阳极132被形成为与开关薄膜晶体管150和驱动薄膜晶体管100交叠,使得阳极132被设置在第二发光区域EA2处。阳极132与开关薄膜晶体管150和驱动薄膜晶体管100交叠,同时保护层118、滤色器180和平整层128***置在阳极132与开关薄膜晶体管150和驱动薄膜晶体管100之间。这里,开关薄膜晶体管150和驱动薄膜晶体管100中的每一个与阳极132之间的距离与滤色器180的厚度相对应,由此防止寄生电容的增大。
有机发光层134被形成在第一发光区域EA1和第二发光区域EA2的由堤岸138暴露出的阳极132上。有机发光层134包括按次序或按相反次序堆叠在阳极132上的空穴相关层、发光层和电子相关层。
如图2所示,堤岸138形成在阳极132上以制备第一发光区域EA1和第二发光区域EA2。堤岸138暴露出在第一发光区域EA1和第二发光区域EA2处设置的阳极132。在每个子像素中,第一发光区域EA1设置在没有形成开关薄膜晶体管150和驱动薄膜晶体管100的区域处。在每个子像素中,多个第二发光区域EA2设置在形成有开关薄膜晶体管150和驱动薄膜晶体管100的区域处。
阴极136形成在堤岸138的上表面处和侧表面处以便面向第一发光区域EA1和第二发光区域EA2的阳极132,同时有机发光层134***置在阴极136与阳极132之间。当设置底部发光型有机发光显示装置时,阴极136被形成为具有包括诸如铟锡氧化物(ITO)或铟锌氧化物(IZO)的透明导电层和诸如铝(Al)、银(Ag)和Ag:Pb:Cu(APC)的金属层的堆叠结构。
第一源极158和第二源极108以及第一漏极160和第二漏极110包括透明导电层172a和形成在该透明导电层172a上的不透明导电层172b。每一个透明导电层172a可以由诸如ITO的透明导电材料形成。每一个不透明导电层172b可以具有包括选自由钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)和铜(Cu)或其合金组成的组中的至少一种的单层形式或多层形式,但不限于此。
具体地,第一源极158和第二源极108以及第一漏极160和第二漏极110被设置为具有这样的结构:透明导电层172a和不透明导电层172b在像素电路的除了第二发光区域EA2以外的其余区域处堆叠。在这种情况下,第一源极158和第二源极108以及第一漏极160和第二漏极110被设置为具有这样的结构:透明导电层172a和不透明导电层172b在与第一有源层154和第二有源层104交叠的区域处堆叠。不透明导电层172b阻挡从发光器件130产生的光,由此防止第一有源层154和第二有源层104由于来自发光器件130的光而变得导电。另外,具有高导电性的不透明导电层172b可以防止第一源极158和第二源极108以及第一漏极160和第二漏极110的电阻要素的增大。
第一源极158和第二源极108以及第一漏极160和第二漏极110包括在第一发光区域EA1和第二发光区域EA2处的透明导电层172a。具体地,第一源极158和第二源极108以及第一漏极160和第二漏极110包括在与第一有源层154和第二有源层104的非交叠区域处的透明导电层172a。
这里,在设置有开关薄膜晶体管150和驱动薄膜晶体管100的第二发光区域EA2处穿过滤色器180的光经由第一源极158和第二源极108以及第一漏极160和第二漏极110的透明导电层172a被发射至基板101的底部。因此,在本发明中,从第二发光区域EA2以及第一发光区域EA1发射光,从而可以提高开口率,并且因此易于实现高分辨率。
另外,在本发明中,与设置在像素电路处的接触孔相对应的电极包括透明导电层172a。例如,与存储接触孔146交叠的存储上部电极144和第二漏极110包括透明导电层172a,使得光从与存储接触孔146对应的区域发出,由此提高开口率。另外,设置在与设置为用于将第一漏极160连接至第二栅极106的接触孔对应的区域处的电极包括透明导电层172a。
表1例示了在第一发光区域EA1和第二发光区域EA2处均发光的示例和在第一发光区域EA1处发光的比较示例的开口率。表1示出了与比较示例的红色子像素和绿色子像素相比,示例的红色子像素和绿色子像素将开口率提高了超过17%。表1示出了与比较示例的蓝色子像素相比,示例的蓝色子像素将开口率提高了超过21%。
[表1]
图3A至图3J是例示制造在图1中示出的有机发光显示装置的方法的截面图。
参照图3A,第一有源层154和第二有源层104形成在基板101上。
具体地,在基板101上沉积半导体材料之后,通过光刻工艺和刻蚀工艺来刻蚀半导体材料以形成第一有源层154和第二有源层104。
参照图3B,具有相同图案的第一栅极156和第二栅极106以及栅极绝缘图案112被形成在形成有第一有源层154和第二有源层104的基板101上。
具体地,在形成有第一有源层154和第二有源层104的基板101上形成栅极绝缘层。使用诸如溅射工艺的沉积方法在栅极绝缘层上形成栅极金属层。栅极绝缘层由诸如SiOx和SiNx的无机绝缘材料形成。栅极金属层由包括Mo、Ti、Cu、AlNd、Al、Cr或它们的合金的单层形式或多层形式形成。然后,通过光刻工艺和刻蚀工艺将栅极金属层和栅极绝缘层同时图案化以形成具有相同图案的第一栅极156和第二栅极106以及栅极绝缘图案112。
参照图3C,在形成有第一栅极156和第二栅极106的基板101上形成具有第一源极接触孔164S和第二源极接触孔124S以及第一漏极接触孔164D和第二漏极接触孔124D的层间绝缘层116。
具体地,通过诸如等离子体增强化学气相沉积(PECVD)的沉积方法在形成有第一栅极156和第二栅极106的基板101上形成层间绝缘层116。然后,通过光刻工艺和刻蚀工艺将层间绝缘层116图案化以形成第一源极接触孔164S和第二源极接触孔124S以及第一漏极接触孔164D和第二漏极接触孔124D。
参照图3D,第一源极158和第二源极108、第一漏极160和第二漏极110以及存储下部电极142被形成在具有第一源极接触孔164S和第二源极接触孔124S以及第一漏极接触孔164D和第二漏极接触孔124D的层间绝缘层116上。下文中,将参照图4A至图4D详细描述第一源极158和第二源极108、第一漏极160和第二漏极110以及存储下部电极142的形成。
如图4A所示,通过诸如溅射工艺的沉积方法在具有第一源极接触孔164S和第二源极接触孔124S以及第一漏极接触孔164D和第二漏极接触孔124D的层间绝缘层116上依次堆叠透明导电层172a和不透明导电层172b。然后,在不透明导电层172b上涂覆光刻胶材料之后,使用半色调掩膜对该光刻胶材料进行曝光和显影以形成具有多台阶结构的光刻胶图案174。具有多台阶结构的光刻胶图案174包括具有第一厚度的第一光刻胶图案174a和具有大于第一厚度的第二厚度的第二光刻胶图案174b。使用具有多台阶结构的光刻胶图案174作为掩模来刻蚀透明导电层172a和不透明导电层172b以分别形成数据线DL、第一源极158和第二源极108、第一漏极160和第二漏极110以及存储下部电极142,如图4B所示。这里,数据线DL、第一源极158和第二源极108、第一漏极160和第二漏极110以及存储下部电极142中的每一个的透明导电层172a和不透明导电层172b被形成为具有相同的图案。然后,如图4C所示,具有多台阶结构的光刻胶图案174被灰化并且去除第一光刻胶图案174a且减小第二光刻胶图案174b的厚度。然后,使用由于灰化工艺而具有减小的厚度的第二光刻胶图案174b作为掩模来刻蚀通过第二光刻胶图案174b暴露出的不透明导电层172b。因此,第一源极158和第二源极108以及第一漏极160和第二漏极110包括在像素电路的第二发光区域EA2处的透明导电层172a。第一源极158和第二源极108以及第一漏极160和第二漏极110包括在像素电路的除了第二发光区域EA2以外的其余区域处的透明导电层172a和不透明导电层172b。存储下部电极142包括在第一发光区域EA1处的透明导电层172a。
参照图3E,在形成有第一源极158和第二源极108、第一漏极160和第二漏极110以及存储下部电极142的层间绝缘层116上形成具有存储接触孔146的保护层118。
具体地,在形成有第一源极158和第二源极108、第一漏极160和第二漏极110以及存储下部电极142的层间绝缘层116上形成保护层118。保护层118由诸如SiOx和SiNx的无机绝缘层形成。然后,通过光刻工艺和刻蚀工艺将保护层118图案化以形成存储接触孔146。
参照图3F,在具有存储接触孔146的保护层118上形成存储上部电极144。
具体地,在具有存储接触孔146的保护层118上沉积透明导电层。然后,通过光刻工艺和刻蚀工艺将透明导电层图案化以形成存储上部电极144。
参照图3G,在形成有存储上部电极144的基板101上形成滤色器180。
具体地,在形成有存储上部电极144的基板101上沉积彩色树脂之后,通过光刻工艺使彩色树脂图案化以形成滤色器180。
参照图3H,在形成有滤色器180的基板101上形成具有像素接触孔120的平整层128。
具体地,诸如丙烯酸树脂的有机层被整个沉积在形成有滤色器180的基板101上以形成平整层128。然后,通过光刻工艺将平整层128图案化以形成像素接触孔120。
参照图3I,在具有像素接触孔120的平整层128上形成阳极132。
具体地,在具有像素接触孔120的平整层128上沉积透明导电层。然后,通过光刻工艺和刻蚀工艺将透明导电层图案化以形成阳极132。
参照图3J,在形成有阳极132的基板101上依次形成堤岸138、有机发光层134和阴极。
具体地,用于堤岸138的光刻胶层被整个沉积在形成有阳极132的基板101上。然后,通过光刻工艺使用于堤岸138的光刻胶层图案化以形成堤岸138。然后,发白光的有机发光层134被整个沉积在形成有堤岸138的基板101上。在形成有有机发光层134的基板101上形成阴极136。
在本发明中,从设置有像素电路的第二发光区域EA2以及没有设置像素电路的第一发光区域EA1发射光,从而可以提高开口率,并且因此易于实现高分辨率。
另外,本发明公开了从第一发光区域EA1和第二发光区域EA2发出具有相同颜色的光。但是,也可以从第一区域EA1和第二区域EA2发出具有不同颜色的光。
另外,本发明公开了第二发光区域EA2的面积在红色子像素、绿色子像素和蓝色子像素处相同。但是,考虑到红色子像素、绿色子像素和蓝色子像素的耐用性,第二发光区域EA2的面积在红色子像素、绿色子像素和蓝色子像素处可以不同。即,具有比红色子像素和绿色子像素更低的耐用性的蓝色子像素的第二发光区域EA2的面积可以大于红色子像素和绿色子像素的第二发光区域EA2的面积。
从上述说明显而易见的是,根据本发明,在设置有像素电路的第二发光区域以及没有设置像素电路的第一发光区域处发射光,从而可以提高开口率,并且因此易于实现高分辨率。
对于本领域技术人员而言,很明显的将是,可以在不脱离本发明的精神或范围的情况下对本发明做出各种修改和变化。因此,本发明旨在涵盖本发明的落入所附权利要求及其等同物范围内的这些修改和变化。
相关申请的交叉引用
本申请要求于2015年12月29日提交的韩国专利申请No.10-2015-188445的权益,该韩国专利申请以引用方式并入本文,如同在本文中进行完全阐述。
Claims (14)
1.一种有机发光显示装置,该有机发光显示装置包括:
发光器件,所述发光器件被设置在基板的每个子像素处;
像素电路,所述像素电路驱动所述发光器件;
堤岸,所述堤岸提供在除了设置有所述像素电路的区域以外的其余区域处的第一发光区域和在设置有所述像素电路的所述区域处的第二发光区域;以及
滤色器,所述滤色器被设置在所述第一发光区域和所述第二发光区域处,
其中,包括在所述像素电路中的至少一个电极包括在所述第二发光区域处的透明导电层。
2.根据权利要求1所述的有机发光显示装置,其中,
所述像素电路包括:
驱动晶体管,所述驱动晶体管连接至所述发光器件;以及
开关晶体管,所述开关晶体管连接至所述驱动晶体管,
所述驱动晶体管和所述开关晶体管中的每一个包括:
有源层,所述有源层被设置在所述基板上;
栅极,所述栅极与所述有源层交叠,所述栅极通过栅极绝缘图案与所述有源层分隔开;
源极,所述源极连接至所述有源层;以及
漏极,所述漏极面向所述有源层,所述漏极通过所述有源层与所述源极分隔开,并且
其中,所述源极和所述漏极中的每一个包括所述透明导电层和设置在所述透明导电层上的不透明导电层。
3.根据权利要求2所述的有机发光显示装置,其中,
所述驱动晶体管和所述开关晶体管中的每一个的所述源极和所述漏极中的每一个被设置为包括在所述像素电路中的除了所述第二发光区域以外的其余区域处堆叠的所述透明导电层和所述不透明导电层,并且
所述驱动晶体管和所述开关晶体管中的每一个的所述源极和所述漏极中的每一个被设置为包括在所述第一发光区域和所述第二发光区域处的所述透明导电层。
4.根据权利要求2所述的有机发光显示装置,其中,
所述驱动晶体管和所述开关晶体管中的每一个的所述源极和所述漏极中的每一个被设置为包括在与所述有源层交叠的区域处堆叠的所述透明导电层和所述不透明导电层,并且
所述驱动晶体管和所述开关晶体管中的每一个的所述源极和所述漏极中的每一个被设置为包括在不与所述有源层交叠的区域处的所述透明导电层。
5.根据权利要求2所述的有机发光显示装置,其中,阳极与所述开关晶体管和所述驱动晶体管交叠,并且所述滤色器***置在所述阳极与所述开关晶体管和所述驱动晶体管之间。
6.根据权利要求1所述的有机发光显示装置,其中,
所述堤岸使所述发光器件的被设置在所述第一发光区域和所述第二发光区域处的阳极暴露,并且
所述发光器件的有机层和阴极在由所述堤岸所暴露出的所述第一发光区域和所述第二发光区域的所述阳极上堆叠。
7.根据权利要求1所述的有机发光显示装置,其中,设置在与在所述像素电路处设置的接触孔对应的区域处的电极包括所述透明导电层。
8.根据权利要求2所述的有机发光显示装置,其中,所述像素电路还包括设置在所述第一发光区域处的存储电容器,并且
其中,所述存储电容器包括连接至所述开关晶体管的存储下部电极和连接至所述驱动晶体管的存储上部电极。
9.根据权利要求8所述的有机发光显示装置,其中,所述存储下部电极和所述存储上部电极由所述透明导电层构成。
10.根据权利要求8所述的有机发光显示装置,其中,所述驱动晶体管的所述漏极连接至由存储接触孔所暴露出的所述存储上部电极,并且
其中,设置在与所述存储接触孔对应的区域处的所述驱动晶体管的所述漏极和所述存储上部电极包括所述透明导电层。
11.一种制造有机发光显示装置的方法,该方法包括以下步骤:
在基板的每个子像素区域处形成像素电路;
在形成有所述像素电路的所述基板上形成滤色器;
形成连接至所述像素电路的发光器件的阳极;
形成提供在除了设置有所述像素电路的区域以外的其余区域处的第一发光区域和在设置有所述像素电路的所述区域处的第二发光区域的堤岸;以及
在所述第一发光区域和所述第二发光区域处依次形成所述发光器件的有机发光层和阴极,
其中,包括在所述像素电路中的至少一个电极包括在所述第二发光区域处的透明导电层。
12.根据权利要求11所述的方法,其中,
形成所述像素电路的步骤包括以下步骤:在所述基板上形成开关晶体管的第一源极和第一漏极以及驱动晶体管的第二源极和第二漏极,
形成所述第一源极、所述第一漏极、所述第二源极和所述第二漏极的步骤包括以下步骤:
在所述基板上依次形成不透明导电层和所述透明导电层;
在所述不透明导电层上形成具有多台阶结构的光刻胶图案;
使用所述光刻胶图案来对所述不透明导电层和所述透明导电层进行刻蚀;
使所述光刻胶图案灰化;以及
使用经灰化的光刻胶图案来对设置在所述第二发光区域处的所述不透明导电层进行刻蚀。
13.根据权利要求12所述的方法,其中,
所述开关晶体管的所述第一源极和所述第一漏极以及所述驱动晶体管的所述第二源极和所述第二漏极中的每一个被设置为包括在所述像素电路中的除了所述第二发光区域以外的其余区域处堆叠的所述透明导电层和所述不透明导电层,并且
所述开关晶体管的所述第一源极和所述第一漏极以及所述驱动晶体管的所述第二源极和所述第二漏极中的每一个被设置为包括在所述第一发光区域和所述第二发光区域处的所述透明导电层。
14.根据权利要求12所述的方法,其中,
所述开关晶体管的所述第一源极和所述第一漏极以及所述驱动晶体管的所述第二源极和所述第二漏极中的每一个被设置为包括在与有源层交叠的区域处堆叠的所述透明导电层和所述不透明导电层,并且
所述开关晶体管的所述第一源极和所述第一漏极以及所述驱动晶体管的所述第二源极和所述第二漏极中的每一个被设置为包括在不与所述有源层交叠的区域处的所述透明导电层。
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