CN106992428A - The closed tube chamber of profile pump alkali metal vapour laser - Google Patents
The closed tube chamber of profile pump alkali metal vapour laser Download PDFInfo
- Publication number
- CN106992428A CN106992428A CN201611157631.XA CN201611157631A CN106992428A CN 106992428 A CN106992428 A CN 106992428A CN 201611157631 A CN201611157631 A CN 201611157631A CN 106992428 A CN106992428 A CN 106992428A
- Authority
- CN
- China
- Prior art keywords
- alkali metal
- metal vapour
- tube chamber
- laser
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/227—Metal vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention discloses a kind of closed tube chamber of profile pump alkali metal vapour laser, it includes：Alkali metal vapour tube chamber side wall and the both sides end window positioned at alkali metal vapour tube chamber, the internal face of alkali metal vapour tube chamber side wall sets feather plucking region, do feather plucking processing in feather plucking region, the region of non-feather plucking forms semiconductor pumped light beam incidence region between adjacent feather plucking region, the feather plucking region surface plates high-reflecting film, forms high-reflecting film region.The present invention can effectively suppress the unwanted oscillation in sealed tube intracavitary portion, effectively reduce associated pump energy loss and corresponding heat burden, be conducive to improving the power output of DPAL systems.
Description
Technical field
The invention belongs to be combined the closed tube chamber technical field of side wall, it is related to a kind of profile pump alkali metal vapour and swashs
The closed tube chamber of light device.
Background technology
Compared with chemical laser, semiconductor pumped alkali metal vapour laser (Diode Pumped Alkali Vapor
Laser, DPAL) without a large amount of dangerous chemicals, need not using vacuum pump, post-processing easily, can be used semiconductor swash
Light device array pump-coupling；Compared with solid state laser, semiconductor pumped alkali metal vapour laser then has that used heat is few, gas
The readily flowed radiating of body medium, the advantage such as beam quality is higher；And CO2Gas laser is compared, semiconductor pumped alkali metal
Steam laser small volume, laser output linewidth are narrower, laser output wavelength be located at conventional photo detector response ripple
In section, meanwhile, shorter wavelength causes diffraction limited spot smaller.Semiconductor pumped alkali metal vapour laser is possessing solid
Respective shortcoming is largely avoided again while body laser and gas laser major advantage.Therefore, partly lead
Body pumping alkali metal vapour laser has great technical advantage and tempting development prospect, lot of domestic and foreign research team
Substantial amounts of research work is carried out in succession.
The pump mode of laser generally can be divided into two kinds of end pumping and profile pump.End pumping structure is applied to
The laser output of small-power, high light beam quality, with higher light beam coupling efficiency and absorption efficiency；And profile pump structure
Middle pump light and laser are mutually orthogonal, can increase the suction of pump light by lengthening the method for laser medium in the direction of the optical axis
Receive total amount, it is adaptable to high-power laser output.For semiconductor pumped alkali metal vapour laser, profile pump side
Formula can also greatly improve the temperature control efficiency of steam tube chamber, reduce damage probability of the pump light to transparent steam tube chamber.Cause
This, it is one of following main development direction of high power alkali metal vapour laser to generally believe profile pump structure.But,
The pumping distance of side-pumped laser is shorter, and this is likely to result in alkali metal vapour to semiconductor laser pump energy not
Fully absorb, easily cause the waste of pump energy.To improve the utilization rate of pump energy, it is contemplated that in steam tube chamber
One floor height reflectance coating of side plating so that pump light repeatedly comes and goes in steam pipe intracavitary, increases absorption efficiency.But, using this
The problem of structure will bring following serious：On the one hand, it will cause to turn back to the pump light of closed steam tube chamber through high-reflecting film
A part reenter the inside of pumping semiconductor laser, this will influence the stability of photoluminescence of semiconductor laser and subtract
Its few luminescent lifetime；On the other hand, because the saturation gain of semiconductor laser pumping alkali metal vapour laser is larger, plated
High-reflecting film will produce serious unwanted oscillation in closed steam pipe intracavitary portion, this by the light of big lossy pumping laser-
Conversion efficiency, reduces DPAL power output.
The content of the invention
(1) goal of the invention
The purpose of the present invention is：A kind of closed tube chamber of profile pump alkali metal vapour laser is provided, to improve semiconductor
Profile pump alkali metal vapour laser steams to the utilization rate of pump light while effectively suppressing semiconductor side pumped alkali metal
The side unwanted oscillation of gas laser.
(2) technical scheme
In order to solve the above-mentioned technical problem, the present invention provides a kind of closed tube chamber of profile pump alkali metal vapour laser,
It includes：Alkali metal vapour tube chamber side wall 6 and the both sides end window 10 positioned at alkali metal vapour tube chamber 6, alkali metal vapour tube chamber side
The internal face of wall 6 sets feather plucking region 7, and the region of non-feather plucking between feather plucking processing, adjacent feather plucking region 7 is done in feather plucking region 7
Semiconductor pumped light beam incidence region is formed, high-reflecting film 8 is plated on the surface of feather plucking region 7, forms high-reflecting film region 9.
Wherein, the inner space of the high-reflecting film 8 sets working media.
Wherein, the working media is alkali metal gain media.
Wherein, the sealed tube intracavitary portion is filled with buffer gas, and buffer gas is helium, methane, ethane or is above-mentioned
The mixed gas of gas.
The present invention also provides a kind of profile pump alkali metal vapour Optical Maser System, and it includes：Closed tube chamber, is set in
Semiconductor pumped light beam is offered on drum type brake heating-temperature control ring 4 outside closed tube chamber, drum type brake heating-temperature control ring 4 to penetrate
Entrance 5, is arranged on the laser source system in each outside of semiconductor pumped light beam entry portal 5；Semiconductor pumped light beam entry portal
5 is corresponding with the semiconductor pumped light beam incidence regional location set on closed lumen wall.
Wherein, each laser source system includes semiconductor laser pumping light source 1, volume Bragg grating 2 and angle of divergence control
Optical lens group 3 processed.
Wherein, the quantity of the laser source system the need for the semiconductor laser side-face pumping structure set to be defined.
Wherein, the Optical Maser System uses three direction pump modes, sets three laser source systems, three laser
Light-source system is evenly distributed on outside drum type brake heating-temperature control ring 4.
Wherein, efficient heat transfer Jie is encased inside between the drum type brake heating-temperature control ring 4 and alkali metal vapour tube chamber side wall 6
Matter.
Wherein, the semiconductor pumped light beam entry portal 5 is to be arranged on the elongated of drum type brake heating-side surface of temperature control ring 4
Shape slit, with the pump energy through semiconductor laser.
(3) beneficial effect
The closed tube chamber of profile pump alkali metal vapour laser that above-mentioned technical proposal is provided, with advantages below：
(1) the medial surface plating high-reflecting film of closed tube chamber, the pump light that can will be transmitted to tube chamber outer wall is efficiently turned back return pipe
Intracavitary, it is possible to achieve pump light is in intracavitary multiple reflections to make full use of pump energy.
(2) relatively thin high-reflecting film is plated on the medial surface of feather plucking processing steam tube chamber, is irradiated to this high-reflecting film
Pump beam will be gone back in the form of diffusing scattering inside tube chamber, so may insure return tube chamber pump light will not be straight
Tap into diode-end-pumped source, on the premise of pumping source output stability and service life is not influenceed, obtain to the greatest extent may be used
The high pumping source utilization rate of energy.
(3) it can effectively suppress the unwanted oscillation in sealed tube intracavitary portion, effectively reduce associated pump energy loss
And corresponding heat burden, be conducive to improving the power output of DPAL systems.
(4) pumping homogeneity in cross section orthogonal with the optical axis can be improved, this is conducive to building high power, bloom
The alkali metal vapour Optical Maser System of beam quality.
Brief description of the drawings
Fig. 1 illustrates for the cross section of the closed tube chamber of alkali metal of the embodiment of the present invention, pumping system and heating-temperature control system
Figure.
Fig. 2 is alkali metal vapour tube chamber three dimensional structure diagram of embodiment of the present invention
Embodiment
To make the purpose of the present invention, content and advantage clearer, with reference to the accompanying drawings and examples, to the present invention's
Embodiment is described in further detail.
In order to improve effective rate of utilization of the profile pump alkali metal vapour laser to pump light, in order to effectively suppress side
Face-pumping alkali metal vapour laser side unwanted oscillation, the present embodiment proposes a kind of multiple semiconductor side pumped alkali gold
Belong to the closed tube chamber of steam laser.
Shown referring to Figures 1 and 2, the closed tube chamber of the present embodiment includes：Alkali metal vapour tube chamber side wall 6 and positioned at alkali gold
Belong to the both sides end window 10 of steam tube chamber 6, the internal face of alkali metal vapour tube chamber side wall 6 sets feather plucking region 7, and feather plucking region 7 is done
The region of non-feather plucking forms semiconductor pumped light beam incidence region between feather plucking processing, adjacent feather plucking region 7, described to beat
High-reflecting film 8 is plated on the surface of hair-fields domain 7, forms high-reflecting film region 9.
The inner space of the high-reflecting film 8 sets working media.Working media is alkali metal gain media.
Sealed tube intracavitary portion is filled with buffer gas, and buffer gas is helium, methane, ethane or is the mixed of above-mentioned gas
Close gas.
The high-reflecting film 8 that feather plucking region 7, the inner side of feather plucking region 7 of the present embodiment sealed tube intracavitary side are plated, should be true
Protect this layer thin high-reflecting film can with high-efficiency reflective pump light, make again this layer thin high-reflecting film try one's best it is thin with ensure its reflection
Pump light is to diffuse.The pump light that this layer of high-reflecting film can not only will be transmitted to side wall is reflected back in tube chamber and makes pumping
Light, to ensure that pump energy is fully utilized, and may insure to be reflected back the pump of alkali metal vapour chamber in intracavitary multiple reflections
Pu light, which belongs to, to diffuse, and so may insure to be reflected back intraluminal pump light and is no longer directly entered pumping source semiconductor and swashs
Light device, is conducive to improving the output stability and service life of pumping source, is utilized while higher pump energy can be obtained
Rate.Furthermore it is also possible to effectively suppress the unwanted oscillation inside steam cavity, associated heat burden is reduced, is conducive to improving
The power output of DPAL systems.
Based on above-mentioned closed tube chamber, the present embodiment also provides a kind of profile pump alkali metal vapour Optical Maser System, bag
Include：Closed tube chamber, is set on drum type brake heating-temperature control ring 4 outside closed tube chamber, drum type brake heating-temperature control ring 4 and opens up
There is semiconductor pumped light beam entry portal 5, be arranged on the laser source system in each outside of semiconductor pumped light beam entry portal 5；Half
Conductor pump beam entry portal 5 is relative with the semiconductor pumped light beam incidence regional location set on closed lumen wall
Should.
Specifically, each laser source system includes semiconductor laser pumping light source 1, volume Bragg grating 2 and the angle of divergence
Control optical lens group 3.
The quantity of laser source system the need for the semiconductor laser side-face pumping structure set to be defined.
In the present embodiment, it is preferred to use three direction pump modes, three laser source systems, three LASER Light Sources are set
System is evenly distributed on outside drum type brake heating-temperature control ring 4.
According to actual needs, it can also be encased inside between drum type brake heating-temperature control ring 4 and alkali metal vapour tube chamber side wall 6
Efficient heat transfer medium.
Semiconductor pumped light beam entry portal 5 is the elongated shape slit for being arranged on drum type brake heating-side surface of temperature control ring 4, with
Through the pump energy of semiconductor laser.
To sum up, the present invention proposes a kind of semiconductor side pumped closed tube chamber of alkali metal vapour laser.First, exist
The medial surface of the steam tube chamber carries out feather plucking processing (high roughness), then, and one layer is plated again relatively in the medial surface of feather plucking
Relatively thin high-reflecting film.So, the high-reflecting film of this layer of tube chamber medial surface has high reflectance to pump beam, will can both transmit
Pump light to madial wall is all turned back back steam pipe intracavitary, greatly improves the service efficiency in semiconductor laser pumping source；Together
When, diffused because the intraluminal pump light of steam of turning back back belongs to, these pumping light, which will not largely reflect back into, partly leads
Inside body laser pumping source, output mode and the stability generation to semiconductor laser pumping source laser can be thus avoided
Large effect；In addition, this structure can also effectively suppress the unwanted oscillation inside alkali metal vapour tube chamber.
In semiconductor side pumped alkali metal vapour laser of the present invention, semiconductor laser beam is through pumping
Optical linewidth is coupled into steaming after narrowing system, pump beam homogenization colimated light system from tube chamber side surface heater reserved location
In air cavity, after being absorbed by alkali metal vapour, when remaining pump energy passes through steam cavity opposite side, rolled in the form of diffusing scattering
Return to inside tube chamber and absorbed again by alkali metal vapour.Because gain media lumen diameter is smaller, pump light one way absorbs energy
Power is limited, using this pumping configuration pump energy can be made to be steamed in steam pipe intracavitary after repeatedly coming and going by alkali metal
Gas is fully absorbed.
The present invention has following distinguishing feature it can be seen from above-mentioned technical proposal：
(1) unabsorbed pump energy repeatedly can be efficiently reflected back to closed steam pipe intracavitary, be conducive to increasing
Heavy pumping utilization rate, improves light-light conversion efficiency；
(2) pumping homogeneity in cross section orthogonal with the optical axis can be improved, is conducive to building high light beam quality, height
The alkali metal vapour laser system of power；
(3) it may insure that the most pump lights for returning to tube chamber will not directly return to pumping semiconductor laser, favorably
In the output stability and service life that improve semiconductor laser pumping source；
(4) it can effectively suppress unwanted oscillation of the high gain lasers medium in steam cavity, effectively reduce because of unwanted oscillation
Loss and the heat burden brought to pump energy, to improve the power output of laser.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, some improvement and deformation can also be made, these improve and become
Shape also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of closed tube chamber of profile pump alkali metal vapour laser, it is characterised in that including：Alkali metal vapour tube chamber side wall
(6) and positioned at the both sides end window (10) of alkali metal vapour tube chamber (6), the internal face of alkali metal vapour tube chamber side wall (6), which is set, to be beaten
Hair-fields domain (7), the region that feather plucking region (7) do non-feather plucking between feather plucking processing, adjacent feather plucking region (7) forms semiconductor pump
Pu light beam incidence region, feather plucking region (7) the surface plating high-reflecting film (8), is formed high-reflecting film region (9).
2. the closed tube chamber of profile pump alkali metal vapour laser as claimed in claim 1, it is characterised in that the high-reflecting film
(8) inner space sets working media.
3. the closed tube chamber of profile pump alkali metal vapour laser as claimed in claim 2, it is characterised in that the work is situated between
Matter is alkali metal gain media.
4. the closed tube chamber of profile pump alkali metal vapour laser as claimed in claim 1, it is characterised in that the sealed tube
Intracavitary portion is filled with buffer gas, buffer gas be helium, methane, ethane or be above-mentioned gas mixed gas.
5. a kind of profile pump alkali metal vapour Optical Maser System, it is characterised in that including：As above it is any in claim 1-4
Closed tube chamber described in, is set in drum type brake heating-temperature control ring (4) outside closed tube chamber, drum type brake heating-temperature control ring
(4) semiconductor pumped light beam entry portal (5) is offered on, swashing on the outside of each semiconductor pumped light beam entry portal (5) is arranged on
Radiant system；Semiconductor pumped light beam entry portal (5) is used with the semiconductor pumped light beam incidence set on closed lumen wall
Regional location is corresponding.
6. profile pump alkali metal vapour Optical Maser System as claimed in claim 5, it is characterised in that each LASER Light Source system
System includes semiconductor laser pumping light source (1), volume Bragg grating (2) and angle of divergence control optical lens group (3).
7. profile pump alkali metal vapour Optical Maser System as claimed in claim 5, it is characterised in that the LASER Light Source system
The quantity of system the need for the semiconductor laser side-face pumping structure set to be defined.
8. profile pump alkali metal vapour Optical Maser System as claimed in claim 5, it is characterised in that the Optical Maser System
Using three direction pump modes, three laser source systems are set, three laser source systems be evenly distributed on drum type brake heating-
Temperature control ring (4) is outside.
9. profile pump alkali metal vapour Optical Maser System as claimed in claim 5, it is characterised in that the drum type brake adds
Heat-be encased inside efficient heat transfer medium between temperature control ring (4) and alkali metal vapour tube chamber side wall (6).
10. profile pump alkali metal vapour Optical Maser System as claimed in claim 5, it is characterised in that the semiconductor pump
Pu light beam entry portal (5) is the elongated shape slit for being arranged on drum type brake heating-temperature control ring (4) side surface, to swash through semiconductor
The pump energy of light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611157631.XA CN106992428A (en) | 2016-12-15 | 2016-12-15 | The closed tube chamber of profile pump alkali metal vapour laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611157631.XA CN106992428A (en) | 2016-12-15 | 2016-12-15 | The closed tube chamber of profile pump alkali metal vapour laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106992428A true CN106992428A (en) | 2017-07-28 |
Family
ID=59414139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611157631.XA Pending CN106992428A (en) | 2016-12-15 | 2016-12-15 | The closed tube chamber of profile pump alkali metal vapour laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106992428A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108039641A (en) * | 2017-11-07 | 2018-05-15 | 西南技术物理研究所 | A kind of alkali metal vapour laser of dual wavelength double modulation |
| CN113805404A (en) * | 2021-11-17 | 2021-12-17 | 滨州学院 | Uniform lighting device for line scanning photoelectric imaging |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1254451A (en) * | 1997-03-31 | 2000-05-24 | 美国浓缩有限公司 | Small-size highly efficient laser pump cavity |
| CN103928823A (en) * | 2014-03-28 | 2014-07-16 | 中国科学院长春光学精密机械与物理研究所 | Intracavity heat pipe type alkali metal steam laser |
| CN103928824A (en) * | 2014-03-28 | 2014-07-16 | 中国科学院长春光学精密机械与物理研究所 | Heat-pipe-type alkali-metal vapor laser device |
-
2016
- 2016-12-15 CN CN201611157631.XA patent/CN106992428A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1254451A (en) * | 1997-03-31 | 2000-05-24 | 美国浓缩有限公司 | Small-size highly efficient laser pump cavity |
| CN103928823A (en) * | 2014-03-28 | 2014-07-16 | 中国科学院长春光学精密机械与物理研究所 | Intracavity heat pipe type alkali metal steam laser |
| CN103928824A (en) * | 2014-03-28 | 2014-07-16 | 中国科学院长春光学精密机械与物理研究所 | Heat-pipe-type alkali-metal vapor laser device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108039641A (en) * | 2017-11-07 | 2018-05-15 | 西南技术物理研究所 | A kind of alkali metal vapour laser of dual wavelength double modulation |
| CN113805404A (en) * | 2021-11-17 | 2021-12-17 | 滨州学院 | Uniform lighting device for line scanning photoelectric imaging |
| CN113805404B (en) * | 2021-11-17 | 2022-02-18 | 滨州学院 | Uniform lighting device for line scanning photoelectric imaging |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5572541A (en) | Laser rod assembly for side pumped lasers | |
| JPS61100707A (en) | Light source | |
| US10502882B2 (en) | Light source | |
| JP6994687B2 (en) | Fluid sterilizer | |
| CN106992428A (en) | The closed tube chamber of profile pump alkali metal vapour laser | |
| CN102067394A (en) | Laser oscillator | |
| US4357704A (en) | Disc or slab laser apparatus employing compound parabolic concentrator | |
| JP2009518842A (en) | Optically pumped waveguide laser with tapered waveguide sections. | |
| CN107845948A (en) | A kind of disc laser of resonance intracavity pump | |
| Vistas et al. | Solar-pumped TEM00 mode laser simple design with a grooved Nd: YAG rod | |
| US9103526B2 (en) | Phosphor assembly with phosphor element and optical system | |
| TW200845520A (en) | Intracavity frequency-converted solid-state laser for the visible wavelength region | |
| US6822994B2 (en) | Solid-state laser using ytterbium-YAG composite medium | |
| Boutaka et al. | A compact solar laser side-pumping scheme using four off-axis parabolic mirrors | |
| CN109309336A (en) | A kind of quasi-molecule Broadband pump alkali metal blue laser | |
| CN106785818A (en) | Profile pump alkali metal vapour laser uses compound wall sealed tube chamber | |
| CN208986361U (en) | A kind of light supply apparatus based on fluorescent crystal pumping optical waveguide | |
| CN208835447U (en) | A kind of profile pump light supply apparatus | |
| JP2003188441A (en) | Solar beam direct excitation laser oscillator | |
| CN108899747A (en) | A kind of light supply apparatus based on fluorescent crystal pumping optical waveguide | |
| US11929593B2 (en) | Laser pumping device and system including geometric light concentrator and thermal insulator | |
| US20040247003A1 (en) | Laser apparatus | |
| CN213602176U (en) | Pumping assembly | |
| CN111817122A (en) | Multi-pumping all-fiber laser based on cascade pumping structure | |
| CN1975480A (en) | Double-layer structural wideband light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170728 |