CN106992228B - A kind of preparation method and products thereof of passivation contact solar cell - Google Patents
A kind of preparation method and products thereof of passivation contact solar cell Download PDFInfo
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- CN106992228B CN106992228B CN201710373280.4A CN201710373280A CN106992228B CN 106992228 B CN106992228 B CN 106992228B CN 201710373280 A CN201710373280 A CN 201710373280A CN 106992228 B CN106992228 B CN 106992228B
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- 238000002161 passivation Methods 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 127
- 239000002184 metal Substances 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 238000000151 deposition Methods 0.000 claims abstract description 62
- 239000002346 layers by function Substances 0.000 claims abstract description 41
- 238000000137 annealing Methods 0.000 claims abstract description 25
- 230000000694 effects Effects 0.000 claims abstract description 15
- 230000005496 eutectics Effects 0.000 claims abstract description 4
- 239000011261 inert gas Substances 0.000 claims abstract description 3
- 230000008021 deposition Effects 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 48
- 238000002207 thermal evaporation Methods 0.000 claims description 17
- 239000011241 protective layer Substances 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910006854 SnOx Inorganic materials 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 239000010408 film Substances 0.000 description 21
- 239000010703 silicon Substances 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000000758 substrate Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 6
- 239000007769 metal material Substances 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- 239000007789 gas Substances 0.000 description 2
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- 229910052749 magnesium Inorganic materials 0.000 description 2
- CMWTZPSULFXXJA-VIFPVBQESA-N naproxen Chemical compound C1=C([C@H](C)C(O)=O)C=CC2=CC(OC)=CC=C21 CMWTZPSULFXXJA-VIFPVBQESA-N 0.000 description 2
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- 229910052706 scandium Inorganic materials 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 238000005566 electron beam evaporation Methods 0.000 description 1
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- 239000012299 nitrogen atmosphere Substances 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention originally provides a kind of preparation method and products thereof of passivation contact solar cell, by being sequentially depositing buffer layer and functional layer in side of the passivation tunnel layer far from the basal layer, the buffer layer and functional layer are metal, the activity of buffer layer metal is less than the activity of functional layer metal, then annealing is carried out under an inert gas forms carrier-collecting layer, annealing temperature is controlled at [Tc-150 DEG C, Tc+50 DEG C], the Tc is the eutectic point of buffer layer metal and functional layer metal, the function metal layer that can solve existing passivation contact solar cell is uneven, the weak problem of adhesion strength.
Description
【Technical field】
The invention belongs to area of solar cell, and in particular to it is a kind of passivation contact solar cell preparation method and its
Product.
【Background technology】
Since 2016, carrier selection passivation contact crystal silicon solar batteries gradually become the new heat of international photovoltaic art
Point, this is a kind of hetero-junction solar cell structure being collected to carrier (electronics or hole) by functional layer, is totally different from
Traditional pn-junction battery standby by diffusion.The characteristic feature of carrier selection passivation contact heterojunction crystal silicon solar battery exists
In collecting photo-generated carrier by hetero-junctions, conventional crystalline silicon battery is completely avoided in technique and is needed using High temperature diffusion doping system
The step of preparation emitter-base bandgap grading, also eliminates multiple steps such as phosphorus required after spreading/Pyrex removal, cleaning and etching edge.
Relative to traditional diffusion pn crystalline silicon cell, carrier selection passivation contact crystal silicon solar batteries are in device object
There are three unique advantages for tool in reason：One, avoid using heavily doped layer, can effectively eliminate additional electricity that heavily doped layer is brought and
Optical loss specifically includes：Compound, parasitic absorption of auger recombination, SRH etc.；It two, can using different carrier collection materials
It is absorbed with more adjusting the band structure of hetero-junctions, reducing parasitic optical；Three, the carrier collection for realizing gross area, has
Effect reduces carrier transport distance.Therefore, such heterojunction solar battery is expected to obtain higher open-circuit voltage, short circuit electricity
Stream, fill factor, promote the overall performance of battery.
Carrier selection passivation contact crystal silicon solar battery is usually made of three parts：Basal layer (generally use crystal silicon),
It is passivated tunnel layer, carrier-collecting layer, this structure has both passivated surface and effectively collects two big advantage of carrier.In fact, having
A variety of materials can be as the carrier-collecting layer of such heterojunction solar battery, using low work function and high-work-function metal
It is one of which design method that material, which does electrons and holes collecting layer,.
Publication number CN106449781A, entitled " passivation contact solar cell " patent document disclose one kind with silicon
For optical absorbing layer, using be passivated tunnel layer as middle layer, using low workfunction metal and high-work-function metal as electronics with
Carrier selection passivation contact crystal silicon solar batteries are constructed in the collecting layer in hole；Preparation method is first on crystal silicon surface
One layer of deposition is passivated tunnel layer, later Direct precipitation low workfunction metal or high-work-function metal.Specifically, which uses
The common physical deposition mode such as hot evaporation, magnetron sputtering, electron beam evaporation plating, passivation tunnel layer (such as silica, non-crystalline silicon or
Silicon oxynitride etc.) on Direct precipitation low workfunction metal material (such as Ca, Mg, Ba, Ga, Li, Ce, Tb, Gd, Y, Nd, Lu, Th,
Sc, La, U, Mg, Hf etc.) or high-work-function metal material (such as Ni, Ir, Pt, Se etc.).Wherein, the deposition and atomic of hot evaporation method
Minimum energy, can utmostly reduce the bombardment to substrate, reduce interface damage, promote interface quality, this is also at present most
By widely applied preparation method.
However, thermal evaporation deposition is but difficult that directly one layer of uniform fold of Direct precipitation, thickness are controllable on passivation tunnel layer
Function metal layer.Its reason is：
1) low workfunction metal, high-work-function metal are mostly active metal materials, and metallicity is stronger, vacuum degree simultaneously
In non-very high hot evaporation preparation process, it is easy to be aoxidized；2) metal oxide is ionic crystals mostly, metal and oxygen it
Between form very strong ionic bond, reduce metal wetability on substrate and adhesion strength；3) nuclear energy of hot evaporation is relatively low,
Adhesion strength thus on substrate is weaker, is highly detrimental to absorption of the metal on passivation tunnel layer.
Therefore, using conventional thermal evaporation deposition processability active low work function or high-work-function metal functional layer material
When, be easy to cause metal layer be difficult to uniform fold, it is in uneven thickness, adhesion strength is weak the shortcomings of, seriously affected be based on low high work(
The performance of the hetero-junction solar cell device of the carrier collection of function metal.
【Invention content】
The purpose of the present invention is to provide a kind of preparation methods of passivation contact solar cell, can solve existing passivation
The problem that the function metal layer of contact solar cell is uneven, adhesion strength is weak.It is a further object of the present invention to provide function gold
Belong to the passivation contact solar cell that layer is uniform, adhesion strength is strong.
The technical scheme is that：
A kind of preparation method of passivation contact solar cell, the passivation contact solar cell includes stacking gradually
Basal layer, passivation tunnel layer and carrier-collecting layer, which is characterized in that include the following steps：
It is sequentially depositing buffer layer and functional layer, the buffer layer in the passivation side of the tunnel layer far from the basal layer
It is metal with functional layer, the activity of buffer layer metal is less than the activity of functional layer metal；The buffer layer and the work(
Ergosphere carries out annealing and forms the carrier-collecting layer under an inert gas jointly, annealing temperature control [Tc-150 DEG C,
Tc+50 DEG C], the Tc is the eutectic point of buffer layer metal and functional layer metal.
The activity of buffer layer metal is less than the activity of functional layer metal, and the low metal wetability of activity is good, in sky
In gas stablize, be not easy the metal of oxidation deterioration, can uniform deposition, provide nuclearing centre for subsequent deposition.The technical solution is first
One layer of low metal buffer layer of the activity that wetability is good, adhesion strength is strong is first prepared, is the high gold of the activity of subsequent deposition
Function of dominant layer provide nuclearing centre, then the high metal of the weaker activity of regrowth adhesion strength (its oxide be usually by force from
Subtype crystal), while increasing its adhesion strength.It should be pointed out that the pattern that the technical solution is not strict with buffer layer is
Smooth covering continuous film can also be with the quasi-continuous film of certain island.The purpose for increasing annealing is to make buffering
Layer and the metal of functional layer generate counterdiffusion, so that it is guaranteed that passivation tunnel layer interface goes out to be enriched with a certain amount of functional layer metal original
Son promotes carrier collection ability, and annealing temperature controls the temperature range near the eutectic point of cache layer and functional layer metal,
Faster diffusion rate can be kept again by neither changing metallic state.Therefore, which is improved and is carried by pre-deposition buffer layer
Stream subcollector layer can also obtain the relatively low carrier collection of interfacial state to the adhesiveness of silicon substrate so as to improve its uniformity
Hetero-junctions.
Further, the preparation method of above-mentioned passivation contact solar cell is further comprising the steps of：In the functional layer
It completes after depositing, before annealing, protective layer, the protection is deposited in side of the functional layer far from the passivation tunnel layer
Layer uses metal or metal oxide stable in the air.Metal (such as Al, Ag, Sn) stable in the air or metal oxygen
Compound protective layer property stabilization, compact structure can form outer protection effect to internal active metal function layer.
Further, the thickness of above-mentioned buffer layer is 0.1~2.0nm.Buffer layer can make active metal functional layer in satisfaction
Bao Yuehao is got under conditions of uniform deposition, because buffer layer is thinner, active metal functional layer is stronger to carrier collection ability.
Further, above-mentioned buffer layer metal is one or more of Al, Ti, Ni, Ag.Buffer layer metal preferably exists
SiO2Upper wettability is good, adhesion strength is strong, with hot evaporation method can controllable growth metal.
Further, the thickness of above-mentioned functional layer is 2~500nm, can be determined according to device actual demand.
Further, above-mentioned active metal be low workfunction metal material (such as Ca, Mg, Ba, Ga, Li, Ce, Tb, Gd, Y,
Nd, Lu, Th, Sc, La, U, Mg, Hf etc.) or high-work-function metal material (such as Ni, Ir, Pt, Se etc.).
Further, the thickness of above-mentioned protective layer is 10~500nm.
Further, above-mentioned protective layer is Ag, Al, Sn, SnOxOne or more of (1≤x≤2).
Further, above-mentioned deposition uses physical gas-phase deposite method, as thermal evaporation deposition, e-beam evaporation, magnetic control splash
Penetrate method or pulse laser deposition.Wherein, hot evaporation method deposition and atomic energy ratio is relatively low, when depositing on substrate, interface damage
Wound is smaller, and interfacial state also can be lower.
A kind of passivation contact solar cell, which is characterized in that the passivation contact solar cell is according to claim
In 1-9 prepared by any method.
The present invention has technique effect beneficial below：
1) present invention, which first passes through, first prepares one layer of non-interactive metal buffer layer that wetability is good, adhesion strength is strong, is subsequent
The active metal functional layer of deposition provides nuclearing centre, and then (its oxide is usual for the weaker active metal of regrowth adhesion strength
For strong ionic crystal), while increasing its adhesion strength, realization prepares uniform fold, thick on basal layer or passivation tunnel layer
Active metal functional layer that degree is controllable, that adhesion strength is strong；
2) present invention realizes the full thermal evaporation deposition preparation of passivation contact solar cell, and deposition and atomic energy is relatively low, boundary
Surface damage is smaller, guarantees to obtain the very low carrier collection hetero-junctions of interfacial state；
3) present invention ensures there is enough low workfunction metals or high-work-function metal contact passivation tunnel by annealing
Layer is worn, efficient carrier collection efficiency is realized；
4) present invention process is simple, processing compatibility is high, has universality, is also applied for other method for manufacturing thin film.
【Description of the drawings】
Fig. 1 is a kind of process schematic of specific implementation mode；
Fig. 2 is the position view of uniformity test in specific implementation mode.
Mark explanation：1, basal layer 1；2, it is passivated tunnel layer；3, carrier-collecting layer；31, buffer layer；32 functional layers；4,
Protective layer.
【Specific implementation mode】
Below in conjunction with specific embodiment, the present invention is described further.
Embodiment provided below be not to limit the range that is covered of the present invention, described step nor with
Sequence is executed to limit its.Those skilled in the art are the present invention in conjunction with existing common knowledge conspicuously improved, also fall
Enter the present invention claims protection domain within.
It should be pointed out that passivation contact solar cell as described below includes the basal layer 1 stacked gradually, passivation tunnelling
Layer 2, carrier-collecting layer 3, further include partly protective layer 4, and carrier-collecting layer is by 32 divergent contour of buffer layer 31 and functional layer
At as shown in Figure 1；Buffer layer 31 can be smooth covering continuous film, can also be with the quasi-continuous film of certain island；Text
In involved metal composition of alloy similar in property also can be used.
Embodiment one
A layer thickness is grown on the N-type silicon (basal layer) that resistivity is 1ohm.cm, sample size is 4cm*4cm is
The SiO of 2.0nmyLayer (passivation tunnel layer, 1≤y≤2), 4 silicon chips is attached in the glass substrate of 10cm*10cm, then with two
Kind method deposits carrier-collecting layer.
Method one：Thermal evaporation deposition is directly used to deposit 200nm Mg electrodes as functional layer, deposition rate 0.5-3A/s sinks
The pallet rotation of product process sample；Then in N2Under atmosphere, 400 DEG C of annealing 20min.
Method two：Thermal evaporation deposition is used first to deposit 0.2nmAl metals as buffer layer, then deposition rate 0.1-2A/s sinks
Product 200nm Mg electrodes are as functional layer, deposition rate 0.5-3A/s, the rotation of whole process sample tray；Then in N2Atmosphere
Under, 400 DEG C of annealing 20min.IV curves under the conditions of test annealing both front and back, sample is Schottky contacts before finding annealing,
It is Ohmic contact after annealing.
Uniformity test：As shown in Figure 2, the gold of 9 points of A-I on two kinds of deposition method silicon chips is measured respectively with step instrument
Belong to the thickness of film, the results showed that, the metallic film that method one deposits, thickness fluctuates within the scope of 10.6nm-289.7nm,
Even property is poor, and the metallic film that method two deposits, thickness fluctuates within the scope of 198.6nm-204.7nm, and uniformity is preferable, specifically
Data are as shown in table 1.
Metallic film (carrier-collecting layer) thickness of 1. embodiment one of table counts
Adhesion test：It tears the metal Mg films deposited on two methods lower silicon slice respectively with adhesive tape, finds method one
The metallic film of deposition only needs adhesive tape once to tear, and just falls off.The metallic film that method two deposits is torn for 3 times by adhesive tape
Do not fall off.
Embodiment two
A layer thickness is grown on the N-type silicon (basal layer) that resistivity is 1ohm.cm, sample size is 4cm*4cm is
The SiO of 2.0nmyLayer (passivation tunnel layer, 1≤y≤2), 4 silicon chips is attached in the glass substrate of 10cm*10cm, then with two
Kind method deposits carrier-collecting layer.
Method one：Thermal evaporation deposition is directly used to deposit 200nm Mg electrodes as functional layer, deposition rate 0.5-3A/s sinks
The pallet rotation of product process sample；Then under an ar atmosphere, 650 DEG C of annealing 10min.
Method two：Thermal evaporation deposition is used first to deposit 2nm Ti metals as buffer layer, then deposition rate 0.1-2A/s is deposited
200nm Mg electrodes are as functional layer, deposition rate 0.5-3A/s, the rotation of whole process sample tray；Then in Ar atmosphere
Under, 650 DEG C of annealing 10min.
Uniformity test：As shown in Figure 2, the gold of 9 points of A-I on two kinds of deposition method silicon chips is measured respectively with step instrument
Belong to the thickness of film, the results showed that, the metallic film that method one deposits, thickness fluctuates within the scope of 10.6-287.6nm, uniformly
Property poor, the metallic film that method two deposits, thickness fluctuates within the scope of 198.4nm-202.5nm, and uniformity is preferable, specific number
According to as shown in table 2 below.
Metallic film (carrier-collecting layer) thickness of 2. embodiment two of table counts
Embodiment three
A layer thickness is grown in the P-type silicon (basal layer) that resistivity is 2ohm.cm, sample size is 4cm*4cm is
The SiN of 1.4nmzLayer (passivation tunnel layer, 1≤z≤4/3), 4 silicon chips are attached in the glass substrate of 10cm*10cm, are then used
Two methods deposit carrier-collecting layer.
Method one：Thermal evaporation deposition is directly used to deposit 500nm Ca electrodes as functional layer, deposition rate 0.5-3A/s sinks
The pallet rotation of product process sample；Then under an ar atmosphere, 650 DEG C of annealing 30min.Method two：1nm is first deposited with thermal evaporation deposition
Then Ni metals deposit 500nm Ca electrodes as functional layer as buffer layer, deposition rate 0.1-2A/s, deposition rate is
0.5-3A/s, the rotation of whole process sample tray；Then in N2Under atmosphere, 650 DEG C of annealing 30min.
Uniformity test：Measure the thickness of the metallic film of 9 points of A-I on two kinds of deposition method silicon chips respectively with step instrument
Degree, the results showed that, the metallic film that method one deposits, thickness fluctuates within the scope of 410.6-587.6nm, and uniformity is poor, side
The metallic film that method two deposits, thickness fluctuate within the scope of 498.4nm-502.5nm, and uniformity is preferable.
Example IV
A layer thickness is grown in the P-type silicon (basal layer) that resistivity is 2ohm.cm, sample size is 4cm*4cm is
The SiN of 1.6nmzLayer (passivation tunnel layer, 1≤z≤4/3), 4 silicon chips are attached in the glass substrate of 10cm*10cm, are then used
Two methods deposit carrier-collecting layer.
Method one：Thermal evaporation deposition is directly used to deposit 100nm Li electrodes as functional layer, deposition rate 0.5-3A/s sinks
The pallet rotation of product process sample；Then under an ar atmosphere, 500 DEG C of annealing 20min.Method two：2nmAl is first deposited with thermal evaporation deposition
Then metal deposits 100nm Li electrodes as functional layer, deposition rate 0.5- as buffer layer, deposition rate 0.1-2A/s
3A/s, the rotation of whole process sample tray；Then in N2Under atmosphere, 500 DEG C of annealing 20min.
Uniformity test：Measure the thickness of the metallic film of 9 points of A-I on two kinds of deposition method silicon chips respectively with step instrument
Degree, the results showed that, the metallic film that method one deposits, thickness fluctuates within the scope of 56.8-112.3nm, and uniformity is poor, method
The metallic film of two depositions, thickness fluctuate within the scope of 98.4nm-103.3nm, and uniformity is preferable.
Embodiment five
It is 1ohm.cm in resistivity, sample size is that two-sided growth a layer thickness is 2.0nm in the N-type silicon chip of 4cm*4cm
SiOyLayer (passivation tunnel layer, 1≤y≤2), on a glass substrate by silicon chip patch, 0.4nmAl is first deposited with thermal evaporation deposition, after
4nmMg is deposited, then with same method, 0.4nmAl and 4nmMg is deposited in another side.After the complete metal Mg of double-sided deposition, use
Sinton tests Joe, iVoc and Lifetime, Joe 177pA/cm2, iVoc 0.629V, Lifetime are 90.55 μ s.
It is 1ohm.cm in resistivity, sample size is that two-sided growth a layer thickness is 2.0nm in the N-type silicon chip of 4cm*4cm
SiOyLayer (passivation tunnel layer, 1≤y≤2), on a glass substrate by silicon chip patch, is first deposited with e-beam evaporation
0.4nmAl deposits 4nmMg afterwards, and then with same method, 0.4nmAl and 4nmMg is deposited in another side.The complete gold of double-sided deposition
After belonging to Mg, Joe, iVoc and Lifetime, Joe 1225pA/cm are tested with Sinton2, iVoc 0.598V, Lifetime are
78.69μs。
Using the Joe smallers of thermal evaporation deposition it can be seen from above-mentioned two embodiment, illustrate that its interfacial state is lower.
Embodiment six
A layer thickness is grown on the N-type silicon (basal layer) that resistivity is 1ohm.cm, sample size is 4cm*4cm is
The SiO of 1.8nmyLayer (passivation tunnel layer, 1≤y≤2), 4 silicon chips is attached in the glass substrate of 10cm*10cm, then with two
Kind method deposits carrier-collecting layer.
Method one：Thermal evaporation deposition is used first to deposit 0.2nmAl metals as buffer layer, then deposition rate 0.1-2A/s sinks
Product 200nm Mg electrodes are as functional layer, deposition rate 0.5-3A/s, the rotation of layer deposition process sample tray；Then in N2Gas
Under atmosphere, 450 DEG C of annealing 20min.
Method two：Thermal evaporation deposition is used first to deposit 0.2nmAl metals as buffer layer, then deposition rate 0.1-2A/s sinks
Product 200nm Mg electrodes are as functional layer, and deposition rate 0.5-3A/s, finally deposition 400nmAl electrodes are whole as protective layer
A process sample pallet rotation；Then in N2Under atmosphere, 450 DEG C of annealing 20min.Test annealing latter two electrode growth condition I-
The stability of V curves, discovery have an Al protective layer samples, and I-V curve is stablized constant in 38 days, be Ohmic contact；There is no Al guarantors
Sheath sample, I-V curve significant change after 7 days, becomes Ohmic contact from Schottky.
Claims (10)
1. a kind of preparation method of passivation contact solar cell, the passivation contact solar cell includes the base stacked gradually
Bottom, passivation tunnel layer and carrier-collecting layer, which is characterized in that include the following steps：
It is sequentially depositing buffer layer and functional layer, the buffer layer and work(in the passivation side of the tunnel layer far from the basal layer
Ergosphere is metal, and the activity of buffer layer metal is less than the activity of functional layer metal；The buffer layer and the functional layer
The common annealing that carries out under an inert gas forms the carrier-collecting layer, annealing temperature control [Tc-150 DEG C, Tc+
50 DEG C], the Tc is the eutectic point of buffer layer metal and functional layer metal.
2. the preparation method of passivation contact solar cell according to claim 1, which is characterized in that in the functional layer
It completes after depositing, before annealing, protective layer, the protection is deposited in side of the functional layer far from the passivation tunnel layer
Layer uses metal stable in the air or metal oxide stable in the air.
3. the preparation method of passivation contact solar cell according to claim 1, which is characterized in that the buffer layer
Thickness is 0.1 ~ 2.0nm.
4. the preparation method of passivation contact solar cell according to claim 1, which is characterized in that the buffer layer gold
Belong to is one or more of Al, Ti, Ni, Ag.
5. the preparation method of passivation contact solar cell according to claim 1, which is characterized in that the functional layer
Thickness is 2 ~ 500nm.
6. the preparation method of passivation contact solar cell according to claim 1, which is characterized in that the functional layer gold
Belong to is low workfunction metal or high-work-function metal.
7. the preparation method of passivation contact solar cell according to claim 2, which is characterized in that the protective layer
Thickness is 10 ~ 500nm.
8. the preparation method of passivation contact solar cell according to claim 2, which is characterized in that the protective layer is
Ag、Al、Sn、SnOXOne or more of (l≤x≤2).
9. the preparation method of passivation contact solar cell according to claim 1, which is characterized in that the deposition uses
Thermal evaporation deposition, e-beam evaporation, magnetron sputtering method or pulse laser deposition.
10. a kind of passivation contact solar cell, which is characterized in that the passivation contact solar cell is according to claim 1-
In 9 prepared by any method.
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