CN106992194A - 一种提高光利用率的图像传感器及其制造方法 - Google Patents
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Abstract
本发明公开了一种提高光利用率的图像传感器,包括集成衬底单元和交替隔离层,所述集成衬底单元中包括光电二极管;其中,还包括光通道沟槽、光通道和反射薄膜;所述光通道沟槽通过刻蚀所述交替隔离层形成,且位于上述光电二极管的正上方,为锥形沟槽;所述光通道填充在所述光通道沟槽中,所述反射薄膜位于所述锥形光通道沟槽的两边侧壁上,并且呈两边薄中间厚具有固定曲率的凸面,入射光通过所述光通道到达所述光电二极管。本发明提供的一种提高光利用率的图像传感器反射薄膜具有好的遮光效果,光通道具有好的折射效果,增加了光利用率,并且工艺简单,成本低,灵敏度小,噪音小。
Description
技术领域
本发明涉及图像传感器领域,具体涉及一种提高光利用率的图像传感器及其制造方法。
背景技术
图像传感器包括电荷耦合器件(CCD)和互补金属氧化物半导体(CMOS),CCD制造工艺复杂,成本较高,CMOS太容易出现杂点,并且工艺复杂。目前常用的背面照光技术(BSI)型的CMOS采用晶片键合技术,来改变元件内部的结构,即将感光层的元件调转方向,让光能从背面直射进去,避免了传统CMOS传感器结构中光线会受到微透镜和光二极管之间的电路和晶体管的影响,从而显著提高光的效能,大大改善低光照条件下的拍摄效果。
但是在背面照光技术(BSI)型的CMOS技术中还存在以下三个缺陷:(1)入射光从晶片背面射入到达光电二极管,在光传输过程中,会发生光电转换,通过一定的设备读出这些信号;在通常的到达光电二极管的光路中,最显著的问题是不同的隔离膜界面会出现双折射现象,或者光从微透镜到达光电二极管过程中会出现反射或者内散射的情况,这样就会降低光的利用率。(2)在BSI技术中,在外延片上制作光吸收层,这就对外延片的质量要求十分苛刻,外延片中晶体的错位或者不规则都会影响光的传播错位,从而影响图像传感器的质量。(3)在BSI技术中,需要防范邻近像素之间的载波泄漏,所以一般在结构上生成深的沟道隔离或者先完成沟道,再通过CMP技术抛光,这种工艺复杂繁琐,造成了成本的大幅度提升。
发明内容
本发明所要解决的技术问题是提供一种提高光利用率的图像传感器及其制造方法,在光通道沟槽中填充光通道,并在侧壁上形成两边薄中间厚的反射薄膜,反射薄膜具有遮光效应,光通道具有好的折射效果,增加了光利用率,并且工艺简单,成本低,灵敏度小,噪音小。
为了实现上述目的,本发明采用如下技术方案:包括集成衬底单元和交替隔离层,所述集成衬底单元中包括N型光电二极管和P型光电二极管;其中,还包括光通道沟槽、光通道和反射薄膜;所述交替隔离层和光通道沟槽位于所述集成衬底单元的上方,所述光通道沟槽通过刻蚀所述交替隔离层形成,所述光通道沟槽位于上述N型光电二极管和P型光电二极管的正上方且为锥形沟槽;所述光通道填充在所述光通道沟槽中,所述反射薄膜位于所述锥形光通道沟槽的两边侧壁上,并且为两边薄中间厚具有固定曲率的凸面,入射光通过所述光通道到达所述N型光电二极管和P型光电二极管。
进一步地,所述集成衬底单元包括半导体衬底、N沟道阻止层、浅沟道隔离、P型埋层、P阱区、N型光电二极管、P型光电二极管、栅氧化层、转移栅电极、重置栅电极、热氧化层、N型轻掺杂区、N型源漏区、光电二极管保护膜、隔离层、接触孔和钨塞。
进一步地,所述反射薄膜的厚度为30nm。
进一步地,所述反射薄膜为金属薄膜。
进一步地,所述反射薄膜为TiN。
进一步地,所述反射薄膜为Al2O3。
进一步地,所述光通道为SiN填充而成。
进一步地,所述交替隔离层为SiN和SiO2交替沉积形成。
本发明还提供了一种提高光利用率的图像传感器的制造方法,包括:
(1)制作含有半导体衬底、N沟道阻止层、浅沟道隔离、P型埋层、P阱区、N型光电二极管、P型光电二极管、栅氧化层、转移栅电极、重置栅电极、热氧化层、N型轻掺杂区、N型源漏区、光电二极管保护膜、隔离层、接触孔和钨塞的集成衬底单元,所述钨塞和隔离层的上表面平行,并位于所述集成衬底单元的最上方;
(2)在钨塞和隔离层的上面依次交替沉积SiN隔离层,SiO2隔离层,形成交替隔离层,并在交替隔离层中进行金属布线;
(3)在光电二极管的正上方的交替隔离层中干刻蚀出锥形光通道沟槽;
(4)沿着所述锥形光通道的上表面,依次涂覆反射薄膜材料和光刻胶;
(5)通过掩膜、图像化,刻蚀出两边薄中间厚具有固定曲率的凸面的反射薄膜;
(6)在光通道沟槽中沉积SiN,通过化学机械抛光技术去除多余SiN,形成光通道。
本发明的有益效果为:锥形光通道沟槽中填充光通道,具有良好的折射效果,锥形光通道沟槽的两侧的反射薄膜为金属薄膜,具有很好的遮光效果,防止入射光进入交替隔离层中,并且中间厚两边薄的形状确保底部开口最大,确保入射光经过光通道最大程度地进入光电二极管过程,避免了在隔离层中出现的双折射、反射、内散射等光损耗行为,增加了光的利用率。
附图说明
图1-12为本发明的制作方法剖面示意图。
图中:1半导体衬底,2N沟道阻止层,3浅沟道隔离,4P型埋层,5P阱区,6N型光电二极管,7P型光电二极管,8栅氧化层,9转移栅电极,10重置栅电极,11热氧化层,12N型轻掺杂区,13N型源漏区,14光电二极管保护膜,15隔离层,16接触孔,17钨塞,18SiN隔离层,19SiO2隔离层,20SiN隔离层,21SiN隔离层,22SiO2隔离层,23SiN隔离层,24SiO2隔离层,25SiN隔离层,26SiN隔离层,27SiO2隔离层,28SiN隔离层,29SiO2隔离层,30SiN隔离层,31SiN隔离层,32SiO2隔离层,33光通道沟槽,34反射薄膜金属,35光刻胶,36刻蚀等离子,37光通道金属,38SiN隔离层,39光通道。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面结合附图对本发明的具体实施方式做进一步的详细说明。
一种提高光利用率的图像传感器的具体制作工艺如下:
请参见图1,采用N(100)方向,电阻率为80-100Ω·m的硅衬底作为半导体衬底1,并使用含有SC1,HF,SC2的清洗液对其进行RCA清洗,通过湿法热氧化在硅半导体衬底1上形成10nm的热氧化层,在热氧化层上通过化学气相沉积的方法依次沉积35nm的多晶硅和15nm的SiN隔离层,通过光刻胶掩膜,刻蚀出50nm深的沟槽并去除光刻胶,在上述沟槽中形成25nm的SiO2氧化层,在所形成的的SiO2氧化层上进行离子注入,形成N沟道阻止层2,在N沟道阻止层2里通过化学气相沉积法形成500nm的SiO2层,并在950℃温度下,氮气氛围中退火60分钟,经过平坦化技术,形成浅沟道隔离3。
在半导体衬底上以光刻胶为掩膜,经过刻蚀和硼离子注入形成P型埋层4,并去除光刻胶。在P型埋层4上以光刻胶为掩膜,经过刻蚀和硼离子注入形成P阱区5,并去除光刻胶。
以光刻胶为掩膜,经过刻蚀和砷离子注入形成N型光电二极管6,并去除光刻胶;同样以光刻胶为掩膜,经过刻蚀和硼离子注入形成P型光电二极管7,之后去除光刻胶,在1000℃条件下对光电二极管热退火30分钟。
对退火后的半导体衬底进行RCA清洗,并通过原位水气生成法形成7nm的栅氧化层8,在栅氧化层8上,通过化学气相沉积法沉积一层200nm的多晶硅。在多晶硅上以光刻胶为掩膜,经过刻蚀和砷离子注入形成N型多晶,去除光刻胶;同样以光刻胶为掩膜,经过刻蚀和硼离子注入形成P型多晶,去除光刻胶。之后,以光刻胶作为掩膜剂,通过干刻蚀多晶硅并去除光刻胶,形成转移栅电极9和重置栅电极10。
以光刻胶为掩膜,通过磷离子注入并去除光刻胶得到N型轻掺杂区12。在半导体衬底上经过900℃湿氧化形成热氧化层11。对热氧化层11进行RCA清洗并在表面依次沉积10nm的SiO2层和30nm的SiN隔离层,并在光电二极管的正上方位置涂覆光刻胶,其余部分的热氧化层经过干刻蚀去除,形成位于光电二极管上方的光电二极管保护膜14,之后去除光刻胶。将光刻胶涂覆在浮动扩散像素区,以光刻胶为掩膜,经过刻蚀和砷离子注入,并去除光刻胶,形成N型源漏区13。最后,在半导体衬底上表面依次沉积80nm的氧化硅和1200nm的硼磷硅玻璃,在825℃的氮气环境中退火30分钟,并经过化学机械抛光形成隔离层15。
如图2所示,在隔离层15上涂覆光刻胶,以光刻胶掩膜,刻蚀出接触孔16,去除光刻胶。
如图3所示,在接触孔16中依次沉积10nm的Ti层、7nm的TiN层和300nm的W层,并经过CMP去除多余部分的W层,形成钨塞17。
如图4所示,在钨塞17和隔离层15的上表面依次沉积28nm的SiN隔离层18,200nm的SiO2隔离层19和60nm的SiN隔离层20,在隔离层中进行金属布线,金属线采用Ta-Cu以及Cu的混合物。之后再次在SiN隔离层20的上表面依次沉积50nm的SiN隔离层21,270nm的SiO2隔离层22,40nm的SiN隔离层23,300nm的SiO2隔离层24,80nm的SiN隔离层25,在隔离层中进行金属布线,金属线采用Ta-Cu以及Cu的混合物。之后再次在SiN隔离层25的上表面依次沉积50nm的SiN隔离层26,270nm的SiO2隔离层27,40nm的SiN隔离层28,300nm的SiO2隔离层29,100nm的SiN隔离层30,在隔离层中进行金属布线,金属线采用Ta-Cu以及Cu的混合物。
如图5所示,在SiN隔离层30的上表面通过化学气相沉积法依次沉积50nm的SiO2隔离层31和220nm的SiN隔离层32。
如图6所示,在SiN隔离层32上方涂覆200nm的底部抗反射涂层、2500nm的光刻胶和200nm的顶部抗反射涂层,以光刻胶作为掩膜剂,干刻蚀交替隔离层,去除光刻胶之后形成位于光电二级管上方的光通道沟槽33。
如图7所示,沿着光通道沟槽33以及SiN隔离层32的表面采用物理气相沉积法沉积一层反射薄膜金属34。其中,反射薄膜金属为60nm的TiN金属层或者80nm的Al2O3金属层。
如图8所示,沿着反射薄膜金属34的外表面涂覆一层100nm的光刻胶35。
如图9、图10所示,对光通道沟槽33中的反射薄膜金属34和光刻胶35进行刻蚀,以光刻胶为掩膜剂,先将反射薄膜金属34的上半部分刻蚀成圆形,再将反射薄膜金属34的下半部分刻蚀成圆形。最终在反射薄膜金属34的表面刻蚀出两边薄中间厚具有固定曲率的反射薄膜37,其余反射薄膜金属被全部刻蚀掉,之后去除光刻胶35。
如图11所示,在光通道沟槽33、反射薄膜37和SiN隔离层32的上表面沉积1800nm的SiN隔离层38,并且SiN隔离层38完全填充光通道沟槽33。
如图12所示,通过化学机械抛光去除多余的SiN隔离层38,使光通道沟槽33中完全填充SiN隔离层38,形成位于光通道沟槽中的光通道39。
以上所述仅为本发明的优选实施例,所述实施例并非用于限制本发明的专利保护范围,因此凡是运用本发明的说明书及附图内容所作的等同结构变化,同理均应包含在本发明所附权利要求的保护范围内。
Claims (9)
1.一种提高光利用率的图像传感器,包括集成衬底单元和交替隔离层,所述集成衬底单元中包括N型光电二极管和P型光电二极管;其特征在于,还包括光通道沟槽、光通道和反射薄膜;所述交替隔离层和光通道沟槽位于所述集成衬底单元的上方,所述光通道沟槽通过刻蚀所述交替隔离层形成,所述光通道沟槽位于上述N型光电二极管和P型光电二极管的正上方且为锥形沟槽;所述光通道填充在所述光通道沟槽中,所述反射薄膜位于所述锥形光通道沟槽的两边侧壁上,并且为两边薄中间厚具有固定曲率的凸面,入射光通过所述光通道到达所述N型光电二极管和P型光电二极管。
2.根据权利要求1所述的一种提高光利用率的图像传感器,其特征在于,所述集成衬底单元包括半导体衬底、N沟道阻止层、浅沟道隔离、P型埋层、P阱区、N型光电二极管、P型光电二极管、栅氧化层、转移栅电极、重置栅电极、热氧化层、N型轻掺杂区、N型源漏区、光电二极管保护膜、隔离层、接触孔和钨塞。
3.根据权利要求1所述的一种提高光利用率的图像传感器,其特征在于,所述反射薄膜的厚度为30nm。
4.根据权利要求1所述的一种提高光利用率的图像传感器,其特征在于,所述反射薄膜为金属薄膜。
5.根据权利要求4所述的一种提高光利用率的图像传感器,其特征在于,所述反射薄膜为TiN。
6.根据权利要求4所述的一种提高光利用率的图像传感器,其特征在于,所述反射薄膜为Al2O3。
7.根据权利要求1所述的一种提高光利用率的图像传感器,其特征在于,所述光通道为SiN填充而成。
8.根据权利要求1所述的一种提高光利用率的图像传感器,其特征在于,所述交替隔离层为SiN和SiO2交替沉积形成。
9.制备权利要求2所述的图像传感器的方法,包括:
(1)制作含有半导体衬底、N沟道阻止层、浅沟道隔离、P型埋层、P阱区、N型光电二极管、P型光电二极管、栅氧化层、转移栅电极、重置栅电极、热氧化层、N型轻掺杂区、N型源漏区、光电二极管保护膜、隔离层、接触孔和钨塞的集成衬底单元,所述钨塞和隔离层的上表面平行,并位于所述集成衬底单元的最上方;
(2)在钨塞和隔离层的上面依次交替沉积SiN隔离层,SiO2隔离层,形成交替隔离层,并在交替隔离层中进行金属布线;
(3)在N型光电二极管和P型光电二极管正上方的交替隔离层中刻蚀出锥形光通道沟槽;
(4)沿着所述锥形光通道的上表面,依次涂覆反射薄膜材料和光刻胶;
(5)通过掩膜图像化,刻蚀出两边薄中间厚具有固定曲率的凸面的反射薄膜;
(6)在光通道沟槽中沉积SiN,通过化学机械抛光技术去除多余SiN,形成光通道。
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