CN106990670A - Black matrix light shield, the manufacture method of black matrix and array base palte - Google Patents
Black matrix light shield, the manufacture method of black matrix and array base palte Download PDFInfo
- Publication number
- CN106990670A CN106990670A CN201710300977.9A CN201710300977A CN106990670A CN 106990670 A CN106990670 A CN 106990670A CN 201710300977 A CN201710300977 A CN 201710300977A CN 106990670 A CN106990670 A CN 106990670A
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- China
- Prior art keywords
- black matrix
- area
- pattern
- attached
- light transmittance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
The present invention discloses a kind of black matrix light shield, the manufacture method of black matrix and array base palte, and wherein black matrix light shield includes black matrix area and viewing area, and black matrix area is placed with multiple attached patterns；The light transmittance of the light transmittance of viewing area and attached pattern is respectively less than the light transmittance of unafilliated pattern in black matrix area, or, the light transmittance of the light transmittance of viewing area and attached pattern is all higher than the light transmittance of unafilliated pattern in black matrix area.In the manufacture that the black matrix light shield of the present invention is used for black matrix, the preferable black matrix of quality is resulted in.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of black matrix light shield, the manufacture method and battle array of black matrix
Row substrate.
Background technology
In recent years, display screen is widely used in people's daily life, in order to meet user to display screen high-penetration
Rate, high-resolution demand.In product design, the line width of the black matrix of display screen is less and less, with the diminution of line width.It is black
The accuracy of manufacture of matrix requires also more and more higher.
And the requirement of small line width can not be met by using existing technique to manufacture obtained black matrix, obtained black matrix line width
It is bigger than normal.
The content of the invention
The present invention provides a kind of black matrix light shield, the manufacture method of black matrix and array base palte, to solve in the prior art
The problem of obtained black matrix line width quality bigger than normal is not good.
In order to solve the above technical problems, the present invention proposes a kind of black matrix light shield, it includes black matrix area and viewing area, black
Matrix area is placed with multiple attached patterns；The light transmittance of the light transmittance of viewing area and attached pattern is respectively less than non-attached in black matrix area
The light transmittance of metal patterns, or the light transmittance of viewing area and the light transmittance of attached pattern are all higher than unafilliated pattern in black matrix
Light transmittance.
In order to solve the above technical problems, the present invention proposes a kind of manufacture method of black matrix, it includes providing a substrate；
Black matrix material is deposited on substrate, to form black matrix layer；Black matrix layer is handled using photoetching process, to form black square
Multiple attached patterns are placed with array area and viewing area, black matrix area, the black matrix material of attached pattern is less than in black matrix area
The black matrix material of unafilliated pattern.
In order to solve the above technical problems, the present invention propose to be formed with a kind of array base palte, array base palte black matrix area and
Viewing area；Multiple attached patterns are placed with black matrix area, the black matrix material of attached pattern is unafilliated less than in black matrix area
The black matrix material of pattern.
Black matrix light shield of the present invention includes black matrix area and viewing area, and black matrix area is placed with multiple attached patterns；Display
The light transmittance of the light transmittance in area and attached pattern is respectively less than or more than the light transmittance of unafilliated pattern in black matrix area, is using this
After the black matrix light shield of invention is exposed to photoresistance, the photoresistance that viewing area and attached pattern unit area need to react is more non-
The photoresistance that attached pattern unit area need to react is more or less, the photoresistance that unit area need to react on viewing area and attached pattern
Difference is smaller, the corresponding difference for reducing the photoresistance that viewing area and black matrix area need to react, then in developing process, viewing area
Difference with developer solution needed for black matrix area is also smaller, thus black matrix area developer solution will not by viewing area developer solution shadow
Ring, and cause black matrix area development effect not good, the problem of line width is larger.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of black matrix light shield one of the present invention；
Fig. 2 is the structural representation of another embodiment of black matrix light shield of the present invention；
Fig. 3 is the structural representation of the another embodiment of black matrix light shield of the present invention；
Fig. 4 is the schematic flow sheet of the embodiment of manufacture method one of black matrix of the present invention；
Fig. 5 be manufacture method shown in Fig. 4 embodiment in formed black matrix layer substrate structural representation；
Fig. 6 is the sectional view in the substrate A-A directions that black matrix layer is formed shown in Fig. 5；
Fig. 7 is the structural representation for the substrate for forming black matrix in the embodiment of manufacture method shown in Fig. 4 after photoetching process；
Fig. 8 is the sectional view in the substrate B-B directions that black matrix is formed shown in Fig. 7；
Fig. 9 is another sectional view in the substrate B-B directions that black matrix is formed shown in Fig. 7；
Figure 10 is the structural representation of the embodiment of array base palte one of the present invention.
Embodiment
To make those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings and specific implementation
A kind of black matrix light shield, the manufacture method of black matrix and the array base palte that mode is provided invention are described in further detail.
The black matrix that the black matrix light shield of the present invention can be used on manufacture array base palte, black matrix light shield includes black matrix area
And viewing area, black matrix area and the viewing area corresponded respectively on array base palte.
In the photoetching process that black matrix is made, viewing area is compared to removing required for black matrix area on array base palte
Black matrix material is more, therefore the solution level of viewing area declines very fast, the intersection in viewing area and black matrix area, development
Liquid concentration can also be reduced, therefore the edge in black matrix area can be caused to underdevelop, and cause the problem of black matrix line width is excessive.
The present invention provides a kind of black matrix light shield, to reduce what is removed on array base palte needed for viewing area and black matrix area
The difference of black matrix material.Arranged in the black matrix area of black matrix light shield of the present invention multiple attached patterns, and cause annexed drawings
The light transmittance of case and the light transmittance of viewing area are all higher than or less than the light transmittance of unafilliated pattern in black matrix.
Shape and arrangement for attached pattern, the present invention do not limit, only need to meet attached pattern light transmittance and
The light transmittance of viewing area is all higher than or belongs to protection scope of the present invention less than the light transmittance of unafilliated pattern in black matrix.With
Under provide three embodiments, those skilled in the art can do corresponding conversion on the basis of given embodiment.
Fig. 1-Fig. 3 is referred to, Fig. 1 is the structural representation of the embodiment of black matrix light shield one of the present invention, and Fig. 2 is that the present invention is black
The structural representation of another embodiment of matrix light shield, Fig. 3 is the structural representation of the another embodiment of black matrix light shield of the present invention.
Black matrix light shield 100 includes black matrix area 11 and viewing area 12, and black matrix area in three embodiments in Fig. 1-Fig. 3
11 are placed with multiple attached patterns 13.
Three embodiments it is identical in that the light transmittance of attached pattern 13 and the light transmittance of viewing area 12 are all higher than or small
In the light transmittance of the unafilliated pattern in black matrix area 11.
When carrying out photoetching process using black matrix light shield 100, need what is removed on the array base palte corresponding to viewing area 12
Photoresistance is more, if photoresistance is positive photoresistance, the light transmittance of the viewing area 12 of black matrix light shield 100 is than the unafilliated figure in black matrix area 11
The light transmittance of case is big, and accordingly light transmittance of the light transmittance of attached pattern 13 also than the unafilliated pattern in black matrix area 11 is big.
It for example may be configured as to set at full impregnated light, the unafilliated pattern in black matrix area 11 at viewing area 12 and attached pattern 13
It is set to semi-transparent；Or viewing area 12 is set to be set at full impregnated light, attached pattern 13 semi-transparent, black matrix area 11 is unafilliated
It is set at pattern light tight.
If photoresistance is negative photoresistance, the light transmittance of the viewing area 12 of black matrix light shield 100 is than the unafilliated figure in black matrix area 11
The light transmittance of case is small, and accordingly light transmittance of the light transmittance of attached pattern 13 also than the unafilliated pattern in black matrix area 11 is small.Specifically with
Positive photoresistance situation correspondence, is repeated no more.
The difference of three embodiments is the arrangement mode of attached pattern 13 and attached pattern 13 in Fig. 1-Fig. 3.Fig. 1
In, the shape of attached pattern 13 is identical with the shape of viewing area 12, and multiple attached patterns 13 are in the array arrangement of black matrix area 11,
The shape specification all same of each attached pattern 13；In Fig. 2, attached pattern 13 is shaped as circle, each attached pattern 13
Shape specification all same；In Fig. 3, attached pattern 13 is shaped as rectangle, is arranged along the edge in black matrix area 11, each attached
The shape specification all same of pattern 13.
In other embodiments, attached pattern 13 can also be for triangle, rhombus, ellipse etc., and each attached pattern
13 shape specification can also be differed.
After being exposed using the black matrix light shield of the present invention to photoresistance, viewing area and attached pattern unit area need reaction
Photoresistance, the photoresistance that more unafilliated pattern unit area need to react is more or less, unit plane on viewing area and attached pattern
The photoresistance difference that product need to react is smaller, the corresponding difference for reducing the photoresistance that viewing area and black matrix area need to react, then aobvious
In shadow technique, the difference of developer solution is also smaller needed for viewing area and black matrix area, therefore the developer solution in black matrix area will not be by aobvious
Show the influence of area's developer solution.So as to which edge clear, the preferable black matrix of quality is made.
Referring to Fig. 4, Fig. 4 is the schematic flow sheet of the embodiment of manufacture method one of black matrix of the present invention.The present embodiment system
The method of making comprises the following steps.
S101：One substrate is provided.
Black matrix formation is on substrate, and the substrate that this step S101 is provided can be glass substrate, and quartz base plate etc. is thoroughly
Bright substrate.
S102：Black matrix material is deposited on substrate, black matrix layer is formed.
Black matrix material is deposited on substrate, to form a black matrix layer, black matrix material can be the organic photoresistance of black,
It can also be light tight metal.To further understand this step S102, Fig. 5 it is manufacture method shown in Fig. 4 with reference to Fig. 5 and Fig. 6
The structural representation of the substrate of black matrix layer is formed in embodiment, Fig. 6 is the substrate A-A directions that black matrix layer is formed shown in Fig. 5
Sectional view.Black matrix material is deposited on Fig. 5 and Fig. 6, substrate 21, black matrix layer 22 is formed,
S103：Black matrix layer is handled using photoetching process, black matrix area and viewing area is formed.
Black matrix layer is handled using photoetching process, formation black matrix area and viewing area, formed in this step
Multiple attached patterns are placed with black matrix area, and the black matrix material of attached pattern is less than unafilliated pattern in black matrix area
Black matrix material.
Photoetching process specifically includes exposed and developed operation, to obtain with the black matrix area of attached pattern and viewing area,
Black matrix layer can be exposed using above-described embodiment black matrix light shield 100 in this step S103.
Fig. 7-Fig. 9 can be combined, to further appreciate that this step S103.Fig. 7 be manufacture method shown in Fig. 4 embodiment in light
The structural representation of the substrate of black matrix is formed after carving technology, Fig. 8 is section in the substrate B-B directions that black matrix is formed shown in Fig. 7
Face figure, Fig. 9 is another sectional view in the substrate B-B directions that black matrix is formed shown in Fig. 7.
Photoresist layer 22 is handled using photoetching process, black matrix area 221, viewing area 222, black matrix area 222 is obtained
On be placed with multiple attached patterns 223.After photoetching process, viewing area 222 does not have black matrix material, belongs to transmission region；Black square
Can also there is no black matrix material at the attached pattern 223 of array area 222, be transmission region, there is black matrix material in unafilliated pattern area
Material, is light tight region；Also can there are a small amount of black matrix material, i.e., more unafilliated pattern at the attached pattern 223 in black matrix area 222
The black matrix material in area is few, is light tight region.
Shape and arrangement for attached pattern 223, there is various ways, specifically can refer to the implementation of above-mentioned black matrix light shield
The situation of corresponding attached pattern in example.Attached pattern 223 can be identical with the shape of viewing area 222, can also differ；
Attached pattern 223 can also arrange with array arrangement in black matrix area 221 along the edge in black matrix area 221.
Using black matrix edge clear made from manufacture method of the present invention, quality is preferable, and it is less to can obtain line width
Black matrix.
After above-mentioned steps S101-S103 is completed, ITO and photoresistance dottle pin are further deposited on the substrate with black matrix
Thing, can obtain array base palte.
Referring to Fig. 10, Figure 10 is the structural representation of the embodiment of array base palte one of the present invention.The present embodiment array base palte
300 include black matrix area 31 and viewing area 32.
It is placed with multiple attached patterns 33 in black matrix area 31, the shape of attached pattern 33 and is placed with various ways,
It specifically can refer to the situation of attached pattern corresponding in the embodiment of above-mentioned black matrix light shield.Attached pattern 33 can be with display
The shape in area 32 is identical, can also differ；Attached pattern 33 can be with array arrangement in black matrix area 31, also can be along black matrix
The edge arrangement in area 31.
In addition, black matrix material in the present embodiment at attached pattern 33 less than in black matrix area 31 unafilliated pattern it is black
Matrix material；Can not also there is no black matrix material such as viewing area 32 at attached pattern 33, i.e., attached pattern 33 and viewing area 32 are equal
Can printing opacity.
Black matrix edge clear in the present embodiment array base palte, display panel brightness uniformity made from array base palte, no
In the presence of middle bright surrounding it is dark the problem of.And array base palte of the present invention can design the less black matrix of line width, with realize high-penetration rate,
High-resolution.
Embodiments of the present invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this
Equivalent structure or equivalent flow conversion that description of the invention and accompanying drawing content are made, or directly or indirectly it is used in other correlations
Technical field, is included within the scope of the present invention.
Claims (10)
1. a kind of black matrix light shield, it is characterised in that the black matrix light shield includes black matrix area and viewing area, the black matrix
Area is placed with multiple attached patterns；The light transmittance of the light transmittance of the viewing area and the attached pattern is respectively less than the black matrix
The light transmittance of unafilliated pattern in area, or, the light transmittance of the light transmittance of the viewing area and the attached pattern is all higher than institute
State the light transmittance of unafilliated pattern in black matrix area.
2. black matrix light shield according to claim 1, it is characterised in that the light transmittance of the attached pattern and the display
The light transmittance in area is identical.
3. black matrix light shield according to claim 1, it is characterised in that the shape of the attached pattern and the viewing area
Shape it is identical.
4. black matrix light shield according to claim 1, it is characterised in that the multiple attached pattern is in the black matrix area
Array arrangement.
5. a kind of manufacture method of black matrix, it is characterised in that the manufacture method includes：
One substrate is provided；
Black matrix material is deposited on the substrate, to form black matrix layer；
The black matrix layer is handled using photoetching process, to be formed in black matrix area and viewing area, the black matrix area
It is placed with multiple attached patterns, black square of the black matrix material less than unafilliated pattern in the black matrix area of the attached pattern
Battle array material.
6. manufacture method according to claim 5, it is characterised in that the shape of the attached pattern and the viewing area
Shape is identical.
7. manufacture method according to claim 5, it is characterised in that the multiple attached pattern is in black matrix area battle array
Row arrangement.
8. a kind of array base palte, it is characterised in that black matrix area and viewing area are formed with the array base palte；The black matrix
Multiple attached patterns are placed with area, the black matrix material of the attached pattern is less than unafilliated pattern in the black matrix area
Black matrix material.
9. array base palte according to claim 8, it is characterised in that the shape of the attached pattern and the viewing area
Shape is identical.
10. array base palte according to claim 8, it is characterised in that the attached pattern does not have black matrix material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710300977.9A CN106990670A (en) | 2017-05-02 | 2017-05-02 | Black matrix light shield, the manufacture method of black matrix and array base palte |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710300977.9A CN106990670A (en) | 2017-05-02 | 2017-05-02 | Black matrix light shield, the manufacture method of black matrix and array base palte |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106990670A true CN106990670A (en) | 2017-07-28 |
Family
ID=59417918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710300977.9A Pending CN106990670A (en) | 2017-05-02 | 2017-05-02 | Black matrix light shield, the manufacture method of black matrix and array base palte |
Country Status (1)
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| CN (1) | CN106990670A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023155229A1 (en) * | 2022-02-17 | 2023-08-24 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor |
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| CB02 | Change of applicant information |
Address after: 518006 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen Applicant after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 518006 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20170728 |