CN106987879A - Electric deposition device and its electro-deposition method - Google Patents
Electric deposition device and its electro-deposition method Download PDFInfo
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- CN106987879A CN106987879A CN201611035298.5A CN201611035298A CN106987879A CN 106987879 A CN106987879 A CN 106987879A CN 201611035298 A CN201611035298 A CN 201611035298A CN 106987879 A CN106987879 A CN 106987879A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
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Abstract
The present invention provides a kind of electric deposition device and its electrodeposition process method, electric deposition device includes negative electrode, anode and galvanic deposition cell, electric deposition device also includes amberplex, galvanic deposition cell is divided into cathode solution groove and anodic dissolution groove by the lower end and both sides of amberplex with corresponding be tightly connected of bottom wall and side wall of galvanic deposition cell respectively, negative electrode electro-deposition liquid is provided with cathode solution groove, anodic electrodeposition liquid is provided with anodic dissolution groove, negative electrode is located in negative electrode electro-deposition liquid, and anode is located at anodic electrodeposition liquid.The present invention sets the surfactant in amberplex, such cathode portion solution not reacted by anode electrochemical between cathode solution and anodic dissolution and consumed, and making the concentration of the surfactant in cathode solution will not decline；Product produced by surfactant in anode part solution is electrochemically oxidized will not enter cathode portion solution, will not pollute electro-deposition product and cause elementarysubstance solar energy battery component efficiency to be gradually reduced.
Description
Technical field
The present invention relates to area of solar cell, and in particular to a kind of electric deposition device and its electro-deposition method.
Background technology
Solar cell is also known as " solar chip " or photocell, is direct by photoelectric effect or photochemical effect
Luminous energy is changed into the device of electric energy.Wherein, based on the thin-film solar cells worked with photoelectric effect.
Typically, thin-film solar cells is met to sunshine and placed upward, from the bottom up successively mainly include lower encapsulated layer, certain
Bottom, dorsum electrode layer, back contact, absorbed layer, Window layer, upper contact layer and upper encapsulated layer etc..Chinese patent
CN101807622A discloses a kind of method for preparing cadmium telluride diaphragm solar battery component, and it comprises the following steps：
First, CdS films are deposited on transparent conductive film glass and obtains " glass/TCO/CdS ";
Then, above deposit CdTe thin film at " glass/TCO/CdS " and obtain " glass/TCO/CdS/CdTe ";
Then, the heat treatment under chloride cadmium atmosphere is carried out to " glass/TCO/CdS/CdTe "；
Then, " TCO/CdS/CdTe " is fallen in " glass/TCO/CdS/CdTe " after being heat-treated using laser grooving and scribing, delineation
Carrying out chemical attack afterwards makes the rich tellurium of cadmium telluride surface；
Then, fall in " glass/TCO/CdS/CdTe " upper delineation and fill in low-temperature setting on the indentation of " TCO/CdS/CdTe "
Glue；
Then, back contact is deposited, back contact heat treatment is then carried out；
Then carve delineation near TCO/CdS/CdTe indentations using laser and fall CdS/CdTe/ back contacts；
Then, deposited metal dorsum electrode layer, then crosses out TCO/CdS/CdTe indentations using laser incising and the CdS/CdTe/ back ofs the body connects
CdS/CdTe/ back contacts/metal back electrode near contact layer indentation.
In the above-mentioned method for preparing solar cell module, the step of depositing CdTe is physical dry, such as near space liter
China, sputtering, vacuum evaporation etc..Physical dry usually requires that the environment progress in vacuum and/or high temperature, and the requirement to equipment is very
Height, and it is serious to the waste of material of cadmium element and tellurium element.Slave unit is put into for angle and environmental protection angle, above-mentioned system
The method manufacturing cost of standby CdTe thin film solar cell module is very high.
In order to solve the above-mentioned technical problem, american documentation literature US2011/0290641Al discloses a kind of quick electrification
The apparatus and method that sedimentation produces solar cell are learned, american documentation literature US2012/0043215A1 discloses another one
Plant the apparatus and method that electrochemical deposition method produces solar cell.These electrochemical deposition methods usually using water as solvent,
Vacuum and/or hot environment are not needed, the solution containing cadmium element and tellurium element can be recycled, and greatly reduce electrochemistry
Sedimentation prepares the manufacturing cost of CdTe thin film solar cell module.In electrochemical deposition process, " glass/TCO/CdS "
The main electrochemical reaction occurred on negative electrode is：
Cd2+ + HTeO2+ + 3H+ + 6e- à CdTe + 2H2O；
It is to the main electrochemical reaction occurred on electrode anode：
2H2O à O2 + 4H+ + 4e-；
In electrochemical deposition process, in order to drop low-surface-energy so as to the CdTe and " glass/TCO/ that allow electrochemical deposition to obtain
CdS ", which has in more preferable contact, electrochemical deposition solution, is usually added into surfactant, and these surfactants are typically organic
Thing, can be oxidized on the anode surface.Surfactant, which aoxidizes this side reaction, following counter productive：1st, surface work is reduced
The valid density of property agent；2nd, side reaction product is stayed in the solution, and solution is polluted.In actual production process,
Due to above-mentioned two counter productive, solar cell can be caused by recycling the electrochemical deposition solution containing cadmium element and tellurium element
Component efficiency is gradually reduced, therefore the electrochemical deposition solution containing cadmium element and tellurium element can not Infinite Cyclic utilization.
The content of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of electric deposition device and its electro-deposition method, existingization is solved
Learn deposition law technology in because surfactant to electrode surface be oxidized and caused by electrochemical deposition solution can not infinitely follow
The technical problem that ring is utilized, further reduces production cost and environmental pollution improvement's cost.
The present invention is achieved through the following technical solutions：
A kind of electric deposition device, including negative electrode, anode and galvanic deposition cell are provided, the electric deposition device also includes ion exchange
Film, the lower end and both sides of the amberplex respectively with the bottom wall of galvanic deposition cell and side wall is corresponding is tightly connected, by electro-deposition
Groove, which is divided into cathode solution groove and anodic dissolution groove, the cathode solution groove, is provided with negative electrode electro-deposition liquid, the anodic dissolution groove
Interior to be provided with anodic electrodeposition liquid, the negative electrode is located in the negative electrode electro-deposition liquid, and the anode is located at the anodic electrodeposition
In liquid.
Amberplex is a kind of macromolecule for passing through ability with selection containing ionic group, to the ion in solution
Film.Amberplex can be divided into cation-exchange membrane, can be with exchange cation, such as proton, sodium ion, and anion exchange
Film, can exchange anion, such as chlorion, fluorine ion etc..Common amberplex has commercial product, for example
Nafion.The present invention anodic dissolution groove and cathode solution groove between be provided with amberplex so that anodic electrodeposition liquid and
Negative electrode electro-deposition liquid this two parts solution can not free exchange, the specific ion of only amberplex selection can exchange, from
And anodic electrodeposition liquid and negative electrode electro-deposition liquid is selected different liquid as needed, it is not necessary that selection identical liquid
Body, with cost-effective.
It is preferred that, the negative electrode electro-deposition liquid and the anodic electrodeposition liquid phase are same, are that acid cadmium telluride electro-deposition is molten
Liquid or alkaline cadmium telluride electric depositing solution, the pH value of the acid cadmium telluride electric depositing solution is 1-2, the alkaline cadmium telluride electricity
The pH value of deposition solution is 10-11.
The composition of the acid cadmium telluride electric depositing solution is：Live on water, cadmium sulfate, tellurium dioxide, sulfuric acid, hydrochloric acid, surface
Property agent and other additives；The composition of the alkaline cadmium telluride electric depositing solution is：Water, cadmium sulfate, tellurium dioxide, ammoniacal liquor, chlorine
Change ammonium, surfactant and other additives.Surfactant can be the chemical substance of any increase wettability, such as poly- second
Glycol alkyl ether, lauryl sodium sulfate etc.；When infiltration refers to liquid and solid and come in contact, liquid is attached to the surface of solids or oozed
The phenomenon of solid interior is arrived thoroughly.For electro-deposition, good infiltration can guarantee that no electro-deposition product do not have defect or
Aperture；Other additives can be it is any can change the chemical substance of electro-deposition cadmium telluride product property, such as selenium dioxide,
Cadmium telluride electric depositing solution adds appropriate selenium dioxide, can have the cadmium telluride that selenium mixes with output, this product can have in infrared portion
It is more to absorb, that is, change the product property of electro-deposition cadmium telluride.
In electrochemical deposition process, in order to drop low-surface-energy so as to the CdTe and " glass/ that allow electrochemical deposition to obtain
TCO/CdS ", which has in more preferable contact, electrochemical deposition solution, is usually added into surfactant, and these surfactants are typically
Organic matter, can be oxidized on the anode surface.Although anode of the invention and negative electrode use identical electrodeposit liquid, due to ion
The presence of exchange membrane, two parts electrodeposit liquid can not free exchange, it is to avoid the surfactant in cathode portion solution is positive
The situation of pole electrochemical reaction consumption, making the concentration of the surfactant in cathode solution will not decline；In anodic electrodeposition liquid
Surfactant be electrochemically oxidized produced by product will not also enter in negative electrode electro-deposition liquid, it is to avoid electro-deposition product
It is contaminated so that the situation that solar cell module efficiency is gradually reduced.
It is preferred that, the negative electrode electro-deposition liquid is acid cadmium telluride electric depositing solution, and the anodic electrodeposition liquid is pH value
The acid solution equal with the acid cadmium telluride electric depositing solution, and hydrogen ion valid density in the acid solution is equal to acidity
Hydrogen ion valid density in cadmium telluride electric depositing solution.
Anodic electrodeposition liquid can be the acid solution of sulfuric acid, hydrochloric acid etc., as long as meeting its hydrogen ion valid density is equal to acid
Property cadmium telluride electric depositing solution in hydrogen ion valid density, its pH value is equal with the pH value of acid cadmium telluride electric depositing solution i.e.
Can, if hydrogen ion valid density is unequal will to have hydrogen ion concentration gradient, hydrogen ion can be spontaneous laterally low from high concentration
Concentration side is moved, and final or meeting is equal.
It is preferred that, the negative electrode electro-deposition liquid is alkaline cadmium telluride electric depositing solution, and the anodic electrodeposition liquid is pH value
The aqueous slkali equal with the alkaline cadmium telluride electric depositing solution, and chlorion valid density in the aqueous slkali is equal to alkalescence
Chlorion valid density in cadmium telluride electric depositing solution.
It is therefore, cloudy due to being provided with amberplex between negative electrode electro-deposition liquid and anodic electrodeposition liquid in the present invention
The composition of pole electrodeposit liquid and anodic electrodeposition liquid can be different, and the working substance of electro-deposition can not be contained in anodic electrodeposition liquid
Matter, such as without cadmium element and tellurium element, so as to reduce cost.
The present invention also provides a kind of electro-deposition method, and applied to above-mentioned electric deposition device, methods described is according to following step
It is rapid to carry out：
S101：Anodic electrodeposition liquid and negative electrode electro-deposition liquid are injected in anodic dissolution groove and cathode solution groove respectively, and will be pre-
First get out anode and cathode substance is put into anodic electrodeposition liquid and negative electrode electro-deposition liquid；
S102：DC voltage is passed through between the anode and cathode, starts electro-deposition.
Technical scheme provided in an embodiment of the present invention can include following beneficial effect：
The present invention provides a kind of electric deposition device and its electrodeposition process method, and the electric deposition device includes negative electrode, anode and electricity
Dislodger, the electric deposition device also includes amberplex, the lower end and both sides of the amberplex respectively with electro-deposition
Bottom wall and side the wall correspondence of groove are tightly connected is divided into cathode solution groove and anodic dissolution groove, the cathode solution groove by galvanic deposition cell
Interior be provided with negative electrode electro-deposition liquid, the anodic dissolution groove is provided with anodic electrodeposition liquid, and it is heavy that the negative electrode is located at negative electrode electricity
In hydrops, the anode is located at the anodic electrodeposition liquid.The present invention sets ion to hand between cathode solution and anodic dissolution
Change film, two parts solution can not free exchange, the specific ion of only amberplex selection can exchange, come constitute electronics from
Sub-loop；Surfactant in cathode portion solution will not be reacted by anode electrochemical to be consumed, and makes the surface in cathode solution
The concentration of activating agent will not decline；Product produced by surfactant in anode part solution is electrochemically oxidized will not enter
Enter cathode portion solution, will not pollute electro-deposition product is gradually reduced solar cell module efficiency；Anode part solution is also
The active principle of electro-deposition can not be contained, such as, without cadmium element and tellurium element, further reduces cost.
Brief description of the drawings
, below will be to embodiment or existing for the clearer explanation embodiment of the present invention or technical scheme of the prior art
There is the accompanying drawing used required in technology description to be briefly described, it is clear that, to those skilled in the art, not
On the premise of paying creative work, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of structural representation of galvanic deposition cell provided in an embodiment of the present invention.
Shown in figure：1- galvanic deposition cells, 2- anodes, 3- amberplexes, 4- negative electrodes, 5- cathode solutions groove, 6- anodes are molten
Liquid bath.
Embodiment
In order that those skilled in the art more fully understand the technical scheme in the present invention, below in conjunction with of the invention real
The accompanying drawing in example is applied, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described implementation
Example only a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, art technology
The every other embodiment that personnel are obtained under the premise of creative work is not made, should all belong to the protection model of the present invention
Enclose.
The embodiment of the present invention provides a kind of electro-deposition method, and methods described is carried out in accordance with the following steps：
S101：Anodic electrodeposition liquid and negative electrode electro-deposition liquid are injected in anodic dissolution groove 6 and cathode solution groove 5 respectively, and will
It is prepared in advance anode 2 and negative electrode 4 is put into anodic electrodeposition liquid and negative electrode electro-deposition liquid；
S102：DC voltage is passed through between anode 2 and negative electrode 4, starts electro-deposition.
Electrodeposition process in following embodiments is based on electro-deposition method provided in an embodiment of the present invention.
Referring to Fig. 1, a kind of structural representation of electric deposition device provided in an embodiment of the present invention is shown.
As shown in Figure 1, the electric deposition device, including negative electrode 4, anode 2 and galvanic deposition cell 1, the electric deposition device is also
Including amberplex 3, the bottom wall and side wall of the lower end and both sides of the amberplex 3 respectively with galvanic deposition cell 1 are corresponding close
Envelope connection, by galvanic deposition cell, 1 point is cathode solution groove 5 and anodic dissolution groove 6, and the cathode solution groove 5 is interior heavy provided with negative electrode electricity
Anodic electrodeposition liquid is provided with hydrops, the anodic dissolution groove 6, the negative electrode 4 is located in the negative electrode electro-deposition liquid, the sun
Pole 2 is located in the anodic electrodeposition liquid.
Embodiment 1
In the present embodiment using CdS cover TCO glass " glass/TCO/CdS " as negative electrode 4, use using titanium dioxide as
It is main, other compositions for ruthenic oxide metal composite oxide as anode 2, amberplex 2 uses PEM
Nafion115, in use, injection pH value is electric for 1.3 acid cadmium telluride in anodic dissolution groove 6 and cathode solution groove 5 respectively
Deposition solution, is passed through direct-current working volts between negative electrode 4 and anode 2, starts to deposit CdTe on negative electrode 4, until glass/
CdTe layer on TCO/CdS/CdTe reaches expected thickness, and the negative electrode 4 then more renewed carries out electro-deposition.
In the present embodiment, PEM Nafion115 thickness is 127 microns, electrical conductivity be 0.10 Siemens/li
Rice.The composition of described acid cadmium telluride electric depositing solution is water, cadmium sulfate, tellurium dioxide, sulfuric acid, hydrochloric acid, surfactant
With other additives；Surfactant is polyethylene glycol alkyl ether, and other additives are selenium dioxide；Anode in the present embodiment
Acid cadmium telluride electric depositing solution in solution tank 6 and cathode solution groove 5 is static.
In other embodiments of the invention, electric depositing solution can also be flowing, and its way of realization flowed can be with
It is：Anodic electrodeposition liquid entrance and exit is provided with anodic dissolution groove 6, the entrance and exit of anodic electrodeposition liquid is respectively communicated with
Anodic electrodeposition liquid liquid source, and transmission pump is set on connecting pipeline, deliver to anodic dissolution by transmitting pump by anodic electrodeposition liquid
In groove, anodic electrodeposition liquid is flowed into from entrance, outlet outflow, realizes the flowing of anodic electrodeposition liquid；Similarly, negative electrode electro-deposition liquid
The type of flow it is same as described above.The electric depositing solution of flowing can improve material transfer rate to improve electrodepositing speed.
Embodiment 2
The present embodiment provide electric deposition device and its electro-deposition method in, with embodiment 1 only difference is that, anode
Solution tank 6 is not the acid cadmium telluride electric depositing solution of injection, but sulfuric acid solution, and the pH value of sulfuric acid solution is 1.3, and sulfuric acid is molten
Hydrionic valid density in liquid is equal to the hydrogen ion concentration in acid cadmium telluride electric depositing solution.So, anodic electrodeposition
Cadmium element and tellurium element are not just contained in liquid, it is possible to reduce the usage amount of cadmium element and tellurium element, reduce its influence to environment.
Embodiment 3
The present embodiment provide electric deposition device and its electro-deposition method in, with embodiment 1 only difference is that, respectively
The pH value of the acid cadmium telluride electric depositing solution of injection is 1 in anodic dissolution groove 6 and cathode solution groove 5.
Embodiment 4
The present embodiment provide electric deposition device and its electro-deposition method in, with embodiment 1 only difference is that, respectively
The pH value of the acid cadmium telluride electric depositing solution of injection is 2 in anodic dissolution groove 6 and cathode solution groove 5.
Embodiment 5
The present embodiment provide electric deposition device and its electro-deposition method in, with embodiment 2 only difference is that, anode
Solution tank 6 is not the acid cadmium telluride electric depositing solution of injection, but hydrochloric acid solution.
Embodiment 6
In the present embodiment, the TCO glass " glass/TCO/CdS " covered using cadmium sulfide is used with titanium dioxide as negative electrode 4
Based on, other components for tantalum dioxide metal composite oxide as anode 2, amberplex 2 uses chlorion exchange membrane,
In use, the alkaline cadmium telluride electric depositing solution that injection pH value is 10.3 in anodic dissolution groove 6 and cathode solution groove 5 respectively,
Direct-current working volts are passed through between negative electrode 4 and anode 2, start to deposit CdTe on negative electrode 4, until glass/TCO/CdS/
CdTe layer on CdTe reaches expected thickness, and the negative electrode 4 then more renewed carries out electro-deposition.
In the present embodiment, the composition of alkaline cadmium telluride electric depositing solution is water, cadmium sulfate, tellurium dioxide, ammoniacal liquor, chlorination
Ammonium, surfactant and other additives；Surfactant is lauryl sodium sulfate, and other additives use selenium dioxide.
Embodiment 7
The present embodiment provide electric deposition device and its electro-deposition method in, with embodiment 3 only difference is that, anode
Solution tank 6 is not the alkaline cadmium telluride electric depositing solution of injection, but the ammoniacal liquor that injection pH value is 10, and the chlorion in ammoniacal liquor
Valid density is equal to the valid density of the chlorion in alkaline cadmium telluride electric depositing solution.So, in anodic electrodeposition liquid just not
Contain cadmium element and tellurium element, it is possible to reduce the usage amount of cadmium element and tellurium element, reduce its influence to environment.
Embodiment 8
The present embodiment provide electric deposition device and its electro-deposition method in, with embodiment 5 only difference is that, respectively
The pH value of the alkaline cadmium telluride electric depositing solution of injection is 10 in anodic dissolution groove 6 and cathode solution groove 5.
Embodiment 9
In electric deposition device and its electro-deposition method that the present embodiment is provided, it is with the difference of embodiment 5, uses with two
Based on titanium oxide, other components for iridium dioxide metal composite oxide as anode 2, also, respectively in anodic dissolution groove 6
PH value with the alkaline cadmium telluride electric depositing solution of injection in cathode solution groove 5 is 11.
In other embodiments of the invention, other materials such as sulfur oxide cadmium or magnesium can also be used in cathode material
Mix zinc oxide etc. to replace cadmium sulfide to be used as window layer material, cathode material is " glass/TCO/ Window layers "；Anode material
Material can use any conductive body that will not be lost.
Above-described embodiment 1 is into embodiment 4, when negative electrode and anode part are acid cadmium telluride electro-deposition in embodiment 1
When solution, thin film solar module efficiency highest.Therefore, embodiment 1 is most preferred embodiment mode.
Certainly, described above is also not limited to the example above, the technical characteristic of the invention without description can by or
Realized, will not be repeated here using prior art；Above example and accompanying drawing are merely to illustrate technical scheme not
It is limitation of the present invention, preferred embodiment the present invention is described in detail for reference, the ordinary skill people of this area
Member is it should be appreciated that change, remodeling, the addition that those skilled in the art are made in the essential scope of the present invention
Or replace without departure from spirit of the invention, it should also belong to the claims of the present invention.
Claims (5)
1. a kind of electric deposition device, including negative electrode（4）, anode（2）And galvanic deposition cell（1）, it is characterised in that the electro-deposition dress
Putting also includes amberplex（3）, the amberplex（3）Lower end and both sides respectively with galvanic deposition cell（1）Bottom wall and
Side wall correspondence is tightly connected, by galvanic deposition cell（1）It is divided into cathode solution groove（5）With anodic dissolution groove（6）, the cathode solution groove
（5）It is interior to be provided with negative electrode electro-deposition liquid, the anodic dissolution groove（6）It is interior to be provided with anodic electrodeposition liquid, the negative electrode（4）Positioned at described
In negative electrode electro-deposition liquid, the anode（2）In the anodic electrodeposition liquid.
2. electric deposition device according to claim 1, it is characterised in that negative electrode electro-deposition liquid and the anode electricity is heavy
Hydrops is identical, is acid cadmium telluride electric depositing solution or alkaline cadmium telluride electric depositing solution, and the acid cadmium telluride electricity is heavy
The pH value of product solution is 1-2, and the pH value of the alkaline cadmium telluride electric depositing solution is 10-11.
3. electric deposition device according to claim 1, it is characterised in that the negative electrode electro-deposition liquid is acid cadmium telluride electricity
Deposition solution, the anodic electrodeposition liquid is the pH value acid solution equal with the acid cadmium telluride electric depositing solution, and described
Hydrogen ion valid density in acid solution is equal to the hydrogen ion valid density in acid cadmium telluride electric depositing solution.
4. electric deposition device according to claim 1, it is characterised in that the negative electrode electro-deposition liquid is alkaline cadmium telluride electricity
Deposition solution, the anodic electrodeposition liquid is the pH value aqueous slkali equal with the alkaline cadmium telluride electric depositing solution, and described
Chlorion valid density in aqueous slkali is equal to the chlorion valid density in alkaline cadmium telluride electric depositing solution.
5. a kind of electro-deposition method, applied to the electric deposition device described in claim any one of 1-4, it is characterised in that described
Method is carried out in accordance with the following steps：
S101：Respectively in anodic dissolution groove（6）With cathode solution groove（5）Middle injection anodic electrodeposition liquid and negative electrode electro-deposition liquid,
And the anode that will be prepared in advance（2）And negative electrode（4）Material is put into anodic electrodeposition liquid and negative electrode electro-deposition liquid；
S102：In anode（2）And negative electrode（4）Between be passed through DC voltage, start electro-deposition.
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