CN106981567B - A kind of artificial synapse device and its modulator approach based on photoelectric coupling memristor - Google Patents
A kind of artificial synapse device and its modulator approach based on photoelectric coupling memristor Download PDFInfo
- Publication number
- CN106981567B CN106981567B CN201710164794.9A CN201710164794A CN106981567B CN 106981567 B CN106981567 B CN 106981567B CN 201710164794 A CN201710164794 A CN 201710164794A CN 106981567 B CN106981567 B CN 106981567B
- Authority
- CN
- China
- Prior art keywords
- artificial synapse
- electrode
- lower electrode
- synapse device
- artificial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 210000000225 synapse Anatomy 0.000 title claims abstract description 195
- 230000008878 coupling Effects 0.000 title claims abstract description 38
- 238000010168 coupling process Methods 0.000 title claims abstract description 38
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 38
- 238000013459 approach Methods 0.000 title claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims abstract description 49
- 230000006870 function Effects 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 35
- 230000001105 regulatory effect Effects 0.000 claims abstract description 21
- 230000003956 synaptic plasticity Effects 0.000 claims abstract description 15
- 230000008859 change Effects 0.000 claims abstract description 13
- 230000000694 effects Effects 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 230000005611 electricity Effects 0.000 claims description 11
- 230000004048 modification Effects 0.000 claims description 6
- 238000012986 modification Methods 0.000 claims description 6
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 claims description 3
- 230000000638 stimulation Effects 0.000 claims description 2
- 230000004936 stimulating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 11
- 230000033228 biological regulation Effects 0.000 abstract description 8
- 230000005284 excitation Effects 0.000 abstract description 5
- 239000002346 layers by function Substances 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 8
- 238000013528 artificial neural network Methods 0.000 description 5
- 210000004556 brain Anatomy 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 210000001367 artery Anatomy 0.000 description 3
- 230000013016 learning Effects 0.000 description 3
- 210000005036 nerve Anatomy 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 210000003462 vein Anatomy 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910018038 Cu2ZnSnSe4 Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910003194 Nb-SrTiO3 Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000035045 associative learning Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- -1 chalcogenide compound Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 description 2
- 230000020796 long term synaptic depression Effects 0.000 description 2
- 230000027928 long-term synaptic potentiation Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052961 molybdenite Inorganic materials 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 2
- 210000000653 nervous system Anatomy 0.000 description 2
- 210000002569 neuron Anatomy 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 230000001149 cognitive effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Landscapes
- Electronic Switches (AREA)
Abstract
The invention discloses a kind of artificial synapse devices and its modulator approach based on photoelectric coupling memristor, the artificial synapse device includes top electrode, lower electrode and the function material layer between upper and lower electrode, and sandwich structure is collectively formed in top electrode, functional layer material and lower electrode；Wherein, function material layer is made of the material with photoconductive effect, and lower electrode is transparent conductive electrode；Electric signal is inputted by top electrode, lower electrode, and optical signal is then inputted by transparent conductive electrode；This artificial synapse device provided by the invention introduces light as other end adjustment signal except electric signal, and the regulation end of two end artificial synapse devices is expanded to three ends；This one end of addition makes artificial synapse device change in resistance can occur under extraneous optical excitation signal, regulated and controled by the selection to optical excitation signal strength, frequency and optical pulse time, the artificial synapse device can be configured to corresponding multiple resistance states, accordingly realize a variety of synaptic plasticity functions.
Description
Technical field
The invention belongs to artificial neural network technology field, more particularly, to a kind of based on photoelectric coupling memristor
Artificial synapse device and its modulator approach.
Background technique
Existing von neumann machine framework separates the storage of data with calculating, leads between memory and processor
It crosses transfer bus to carry out data transmission, transmission speed can limit computer speed significantly.Under big data era, magnanimity counts in real time
According to large-scale parallel operation be the challenge of existing computing architecture band.And in human brain nervous system, calculate be with storage can be with
It carries out simultaneously.Therefore, the research that class brain calculates, which is expected to become, breaks through a kind of most effective scheme of von Neumann bottleneck.In human brain
In nervous system, the processing of information and storage unit are bound together, and memory carries out parallel with calculating, each neuron
It is all synchronously storing with cynapse and is handling information.The signal input that environmental stimuli generates is transmitted in nervous system, is finally existed
Information is stored and processed into perfect be combined together during output response.And learning and memory is as human brain nerveous system
It unites most basic cognitive activities, plasticity of the neurobiological basis from nerve synapse.Synaptic plasticity refers to cynapse
The ability that weight occurs enhancing with nervous activity current potential and weakens.Iuntercellular double pulses laser (paired-pulse
Facilitation, PPF), long term potentiation (long-term potentiation, LTP), long-term depression (long-term
Depression, LTD), pulse sequence rely on synaptic plasticity (spike-timing-dependent plasticity,
STDP), it is all nerve that pulse frequency, which relies on synaptic plasticity (spike-rate-dependent plasticity, SRDP) etc.,
The common cynapse deformability characteristics of first cynapse.And cognitive process is namely based on the one of neuron and cynapse micro kinetics in itself
Kind macroscopic behavior, such as associative learning (associative learning), competition learning (competitive learning)
Etc. study mechanisms be all based on these most basic synaptic plasticities and realize.Therefore it is dedicated to various prominent in artificial synapse device
The simulated implementation of touching plasticity is to develop one of most basic also most important research direction of artificial neural network.
Memristor as a kind of novel information device, realize at class brain information by the information that can organically blend storage and calculating
Reason, it is considered to be fundamentally break through the key foundation unit of von Neumann bottleneck.And artificial synapse device is ground at present
Study carefully, all focuses on two distal process tentaculum parts；This not only constrains the modification scope and tune of single cynapse device to a certain extent
Precision is controlled, is also limited cross interconnected between nerve synapse device in artificial neural network.Therefore, multiterminal artificial synapse device
Research have very important importance in the development of artificial neural network.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides a kind of based on photoelectric coupling memristor
Artificial synapse device and its modulator approach；Regulate and control end by introducing optical signal in pure electricity regulation memristor artificial synapse device, it is real
Now light, electric signal regulate and control the coupling of artificial synapse device performance, to widen the application range and tune of artificial synapse device
Save precision.
To achieve the above object, according to one aspect of the present invention, a kind of people based on photoelectric coupling memristor is provided
Work cynapse device, including top electrode, lower electrode and the function material layer between upper and lower electrode, top electrode, functional layer material
Sandwich structure is collectively formed in material and lower electrode；
Wherein, function material layer is made of the material with photoconductive effect, and lower electrode is transparent conductive electrode；Electric signal
It is inputted by top electrode, lower electrode, optical signal is then inputted by transparent conductive electrode.
Preferably, the above-mentioned artificial synapse device based on photoelectric coupling memristor, the material of function material layer are organic
Or inorganic perovskite, inorganic oxide or inorganic chalcogenide compound.
Preferably, the above-mentioned artificial synapse device based on photoelectric coupling memristor, the material of function material layer are
CH3NH3PbI3、CH3NH3PbBr3、CH3NH3PbCl3-xIx、CH3NH3PbBr3-xIx、NH4PbI3、NH2CHNH2PbI3、
CH3NH3SnI3、Al2O3、ZnO/Nb-SrTiO3、InGaZnO、CdS、CdSe、PbS、GaAs、InSb、Cu2ZnSnSe4、Cu2ZnSn
(S,Se)4、MoS2、WS2, BN, black phosphorus or graphene.
Preferably, the above-mentioned artificial synapse device based on photoelectric coupling memristor, lower electrode be using comprising ITO or
Transparent conductive electrode made of the transparent conducting glass of FTO.
Preferably, the above-mentioned artificial synapse device based on photoelectric coupling memristor, upper electrode material Au, Cu, Ti,
The metal material of Zn, Al, Ag or Ni.
It is further preferred that the above-mentioned artificial synapse device based on photoelectric coupling memristor, the crystallization of function material layer
Monocrystalline, polycrystalline or amorphous can be used according to preparation method in state；Crystalline state, the thickness of thickness and top electrode of its function material layer
Degree can be used as the parameter of performance indicator regulation.
Above-mentioned artificial synapse device provided by the invention as it is a kind of can the input of three ends device, have two end artificial synapses
The electrology characteristic of device has multistage resistance state under extraneous electrical stimuli signal；The artificial synapse device can be matched by regulating and controlling
Corresponding multiple stable resistance states are set to realize the synaptic plasticities function such as PPF, STP, LTP, STDP；And since its functional layer has
There is photogenic voltage characteristic, third end light can be introduced as adjustment signal, optical signal can individually or auxiliary electric signal is to artificial synapse
The synaptic plasticity function of device is regulated and controled.
Purpose to realize the present invention, other side according to the invention provide a kind of based on photoelectric coupling memristor
Synaptic plasticity of the artificial synapse device under electric signal modulator approach, electric signal inputs from upper and lower two electrodes, light letter
It number is inputted, is specifically comprised the following steps: by the lower electrode of electrically conducting transparent
(1) pass through the top electrode input direct-current level of the metal in the artificial synapse device based on photoelectric coupling memristor
VF, transparent lower electrode is grounded, electric initialization is carried out to the artificial synapse device by adjusting limitation electric current, will manually be dashed forward
The resistance states of tentaculum part are changed into the adjustable resistance state of lower level by initial resistance states；
Wherein, limitation electric current is to apply overload protection electric current when motivating to device；When the bias voltage applied produces
When raw electric current is greater than limitation electric current, the size of current for flowing through device is set to limitation electric current automatically；
(2) pass through the top electrode input write-in level V of the metal in above-mentioned artificial synapse deviceset, by transparent lower electricity
Pole ground connection, by the device from high-impedance state RHRegulate and control to low resistance state RL；
By in transparent lower electrode input erasing level Vreset, the top electrode of metal is grounded, by the device from low-resistance
State RLRegulate and control to high-impedance state RH；
The device is in high-impedance state RHWhen, conductance is very low, and electric current handling capacity is small, can be used in a state in which under it is artificial
Cynapse device simulates the situation that biological synapse bonding strength is very weak, synapse weight is very low；
The device is in low resistance state RLWhen, conductance is very high, and electric current handling capacity is strong, can be used in a state in which under it is artificial
Cynapse device simulates the situation that biological synapse bonding strength is very strong, synapse weight is very big；
(3) the write-in threshold value pulse P of device is inputted by the top electrode of the metal in above-mentioned artificial synapse deviceset, will
Transparent lower electrode ground connection, by artificial synapse device from high-impedance state RHRegulate and control to low resistance state RL；
By in transparent lower electrode input erasing threshold value pulse Preset, the top electrode of metal is grounded, by artificial synapse
Device is from low resistance state RLRegulate and control to high-impedance state RH；
Add amplitude or pulsewidth lower than threshold value pulse (P by an electrode in above-mentioned artificial synapse devicesetOr Preset)
Pulse signal PM, another electrode is grounded, artificial synapse device is regulated and controled to intermediate resistance state RM1；By changing pulse signal
PMPulse parameter amplitude and pulsewidth size, obtain different intermediate resistance state RMX；
When the device is in different intermediate resistance states, conductance is different, and electric current handling capacity is different, can be used in this
Artificial synapse device under state simulates the different bonding strength of biological synapse, it can simulates different synapse weights；When
Artificial synapse device is adjusted from high resistant to low-resistance, and conductance increases, and shows that the synapse weight of the artificial synapse device increases；And work as
When device is adjusted from low-resistance to high resistant, conductance is reduced, and shows that the synapse weight of the artificial synapse device reduces；
(4) when above-mentioned artificial synapse device is in high resistant, and pulse signal PM1Fail by device from high-impedance state regulate and control to
Some stable intermediate resistance state, but from this intermediate resistance state volatibility the high-impedance state that fails back, the artificial synapse device are realized
STP function；
When the device is in high resistant, pulse signal PM2Device is regulated and controled from high-impedance state to some intermediate resistance state, device from this
When the resistance value that fails back to intermediate resistance state volatibility stablizes intermediate resistance state lower than some non-volatile of high-impedance state, the artificial synapse device
Part realizes LTP function；
When the device is in high-impedance state, two identical pulse signal P are continuously applied on the same electrode of deviceM3,
The ratio between the current amplitude caused by the stimulation of pulse signal twice A2/A1When greater than 1, which realizes PPF function；
When the top electrode of the metal in the device applies pulse train PS1, apply pulse train in its transparent lower electrode
PS2, by changing pulse train PS1With PS2Time interval δ t so that the knots modification of synapse weight also changes correspondingly；Pass through tune
The parameter of whole pulse sequence realizes STDP function when synapse weight changes with δ t and changed；
(5) level V is read by the top electrode input of the metal in above-mentioned cynapse deviceread, transparent lower electrode is connect
Ground, the reading of Lai Shixian artificial synapse device weight.
Purpose to realize the present invention, other side according to the invention provide a kind of based on photoelectric coupling memristor
Synaptic plasticity of the artificial synapse device under optical signal modulator approach, include the following steps:
(1) pass through the top electrode input direct-current high level V of the metal in above-mentioned cynapse deviceF, by transparent lower electrode
Ground connection limits electric current by adjusting, so that the resistance states of the artificial synapse device are changed into light arteries and veins by initial resistivity state
Rush adjustable resistance state；
Limitation electric current therein is the overload protection electric current applied when motivating to device；
(2) in the transparent vertical input optical pulse signal L of lower electrodeM, by adjusting light pulse signal LMIntensity, frequency
And pulsewidth, so that the artificial synapse device reaches different stable intermediate resistance state RMX, to simulate the difference in biological synapse
Weight；X is natural number；
When the device is in high-impedance state, and the light pulse signal L appliedM1Fail from high-impedance state to regulate and control device to some
Stable intermediate resistance state but from this intermediate resistance state volatibility the high-impedance state that fails back, the artificial synapse device realize STP function
Energy；
When the device is in high-impedance state, light pulse signal LM2Device is regulated and controled from high-impedance state to some intermediate resistance state, device
When the resistance value that fails back from the intermediate resistance state volatibility stablizes intermediate resistance state lower than some non-volatile of high-impedance state, this is artificial prominent
Tentaculum part realizes LTP function；
When the device is in high-impedance state, two identical light pulse signal L are continuously appliedM3, when light pulse twice stimulates
The ratio between caused current amplitude A2/A1When greater than 1, which realizes PPF function；
(3) level V is read by the top electrode input of the metal in the photoelectric coupling memristor artificial synapse deviceread,
It is grounded in transparent lower electrode, the reading of Lai Shixian artificial synapse device weight.
Purpose to realize the present invention, other side according to the invention provide a kind of based on photoelectric coupling memristor
Synapse weight modulator approach of the artificial synapse device under electric signal and optical signal coupling, include the following steps:
(1) pass through the top electrode input direct-current high level V of the metal in the photoelectric coupling artificial synapse deviceF, will
Transparent lower electrode ground connection, limits electric current by adjusting, so that the resistance states of the artificial synapse device are by initial resistance
State is changed into the adjustable resistance state of photoelectric coupling signal；
(2) add erasing threshold value pulse signal P in the transparent lower electrode of the artificial synapse devicereset, top electrode is connect
Ground can regulate and control artificial synapse device to high-impedance state RH；Apply pulse P in the top electrode of metalM1, transparent lower electrode is connect
Ground, resistive of a device volatibility occurs from high-impedance state to low resistance state, resulting devices resistance value return to high-impedance state, and resistance value does not have
Change, at this point, device realizes STP function；
Make land used comparison as photoelectric coupling, while transparent lower electrode section applies optical signal, in powering on for metal
Pole applies same pulse PM1, change the intensity, frequency and pulsewidth of optical signal, electric pulse PM1Device is regulated and controled to non-volatile
Stable intermediate resistance state RMX(X 1,2,3 ...)；It is changed at this point, optical signal auxiliary electric impulse signal regulates and controls device from STP study
LTP study；
(3) add erasing threshold value pulse signal P in the transparent lower electrode of the artificial synapse devicereset, top electrode is connect
Ground can regulate and control artificial synapse device to high-impedance state RH；Apply pulse P in the top electrode of metalM1, transparent lower electrode is connect
Ground, device resistance value are adjusted to non-volatile intermediate resistance state RM1, at this point, device realizes LTP function；Apply in transparent lower electrode
Optical signal, in the pulse P that the top electrode of metal appliesM1, change the intensity, frequency and pulsewidth of optical signal, electric pulse PM1By device
Regulate and control to non-volatile stable intermediate resistance state RM2, RM2Less than RM1, at this point, optical signal auxiliary electric impulse signal regulation device is real
The LTP study of existing deeper degree；
(4) level V is read by the top electrode input of the metal in the photoelectric coupling artificial synapse deviceread, saturating
Bright lower electrode accesses zero level, the reading of Lai Shixian artificial synapse device resistance state.
Preferably, in above-mentioned modulator approach, RH> RMX> RL, PM<Pset, PM<Preset；Wherein, RHFor the resistance value of high-impedance state,
RMXFor the resistance value of intermediate resistance state, RLFor the resistance value of low resistance state；PMFor be applied to artificial synapse device electrode pulse amplitude,
PsetFor the amplitude of threshold value pulse, PresetFor the amplitude for wiping threshold value pulse signal.
Preferably, in above-mentioned modulator approach, device is placed in different resistance state tune by applying limitation electric current to device
The range of adjusting range, the limitation electric current is 1nA~100mA.
In general, the above technical scheme conceived by the present invention has compared with existing artificial synapse device with following
Beneficial effect:
Above-mentioned artificial synapse device provided by the invention, using the memristor material with photovoltaic effect as artificial prominent
Tentaculum part functional layer material introduces light as other end adjustment signal, by the tune of two end artificial synapse devices except electric signal
Control end is expanded to three ends；This one end of addition makes the artificial synapse device that resistance value change can occur under extraneous optical excitation signal
Change, is regulated and controled by the selection to optical excitation signal strength, frequency and optical pulse time, which can be configured
To corresponding multiple resistance states, to realize on a large scale, accurately to regulate and control single artificial synapse device, accordingly realize PPF,
The synaptic plasticity function of STP, LTP, and then realize the cross interconnected of artificial synapse device in extensive artificial neural network.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the artificial synapse device based on photoelectric coupling memristor that embodiment provides；
Fig. 2 is the pumping signal input signal for the artificial synapse device based on photoelectric coupling memristor that embodiment provides
Figure；
Fig. 3 is the current-voltage characteristic curve for the artificial synapse device based on photoelectric coupling memristor that embodiment provides
Figure；
Fig. 4 is the multistage stable resistance state regulation for the artificial synapse device based on photoelectric coupling memristor that embodiment provides
Figure；
Fig. 5 is being turned under regulation from STP study based on the artificial synapse device of photoelectric coupling memristor for embodiment offer
Fade to the curve synoptic diagram of LTP study；
Fig. 6 is that the artificial synapse device based on photoelectric coupling memristor that embodiment provides carries out deeper degree under regulation
LTP study curve synoptic diagram.
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which: 101- top electrode,
Electrode under 102- function material layer, 103-.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.In addition, invention described below is each
When only when electricity input 1,2 ends of electricity input apply electric signal, institute in embodiment can be opened up by changing artificial synapse device
The technical characteristic being related to can be combined with each other as long as they do not conflict with each other.
It is the structural schematic diagram for the artificial synapse device based on photoelectric coupling memristor that embodiment provides, tool shown in Fig. 1
Body includes top electrode 101, lower electrode 103 and the function material layer 102 between upper/lower electrode, top electrode, functional layer material
Sandwich structure is collectively formed in material and lower electrode.
In the present embodiment, function material layer is made of the material with photoconductive effect, including organic, inorganic perovskite,
Inorganic oxide, inorganic chalcogenide compound and some other two-dimensional material, these two-dimensional materials include but is not limited to
CH3NH3PbI3、CH3NH3PbBr3、CH3NH3PbCl3-xIx、CH3NH3PbBr3-xIx、NH4PbI3、NH2CHNH2PbI3、
CH3NH3SnI3、Al2O3、ZnO/Nb-SrTiO3、InGaZnO、CdS、CdSe、PbS、GaAs、InSb、Cu2ZnSnSe4、Cu2ZnSn
(S,Se)4、MoS2、WS2, BN, the light-sensitive materials such as black phosphorus or graphene；Lower electrode uses the transparent conducting glass of ITO or FTO
Transparent electrode, top electrode use the metal material of Au, Cu, Ti, Zn, Al, Ag or Ni.
It is the excitation of the artificial synapse device based on photoelectric coupling memristor of embodiment offer at work shown in Fig. 2
Signal inputs schematic diagram, and electric signal is inputted by top electrode and lower electrode, and external electrical inputs the upper of 1 end connection artificial synapse device
Electrode, external electrical inputs the lower electrode of 2 ends connection artificial synapse device, and optical signal is then vertically defeated from the lower electrode of electrically conducting transparent
Enter, this artificial synapse device based on photoelectric coupling memristor realizes the input of three ends as a result,.
The electrology characteristic of existing two ends artificial synapse device includes eight word loop lines as shown in Figure 3 and shown in Fig. 4 more
Resistance state roll-off characteristic；Using this characteristic the synaptic plasticities function such as PPF, STP, LTP, STDP can be realized under electric signal control
Energy.
And for above-mentioned artificial synapse device provided by the present invention, when it is from lower 103 vertical input optical signal of electrode,
It can be assisted by optical signal or electric signal is cooperateed with to regulate and control the memristor artificial synapse device, it can also be individually right by optical signal
The memristor artificial synapse device is regulated and controled.
Be specifically described with reference to embodiments artificial synapse device provided in this embodiment individual electric signal, individually
Modulator approach when optical signal and light, electric signal apply simultaneously.
It is prominent under individual electric signal for the artificial synapse device for this photoelectric coupling memristor that embodiment provides
It is specific as follows to touch weight modulator approach:
(1) electricity initialization device resistance value；In the 101 input direct-current high level V of electrode of metal of deviceF, under transparent
Electrode 103 connects zero level, so that the resistance states of artificial synapse device are by initial resistance states Rin1After being changed into initialization
Resistance value Rin2, resistance value R after electrically operatedin2Under, the resistance value of device can be by than VFLow DC level is adjusted；
(2) device resistance value is regulated and controled using DC signal；In the input write-in of the electrode of metal 101 level V of deviceset, will
Transparent lower electrode 103 connects zero level, by artificial synapse device from high-impedance state RHRegulate and control to low resistance state RL；
By in the transparent input erasing of lower electrode 103 level Vreset, electrode of metal 101 is connect into zero level, it will be artificial
Cynapse device is from low resistance state RLRegulate and control to high-impedance state RH；The corresponding I-V diagram of the process is as shown in Figure 3.When device is in high-impedance state RH
When, the conductance of device is very low, and electric current is very weak by the ability of device, can in a state in which under artificial synapse device come
Simulate the situation that biological synapse both ends bonding strength is very weak, synapse weight is very low；When device is in low resistance state RHWhen, the electricity of device
Lead very high, electric current is very capable by device, can be in a state in which lower artificial synapse device is dashed forward to simulate biology
Touch the situation that both ends bonding strength is very strong, synapse weight is very big；
(3) device resistance value is regulated and controled using electric impulse signal；Apply write-in threshold value arteries and veins in the electrode of metal 101 of cynapse device
Rush Pset, zero level pulse is connect in transparent lower electrode 103, it can be by device from high-impedance state RHRegulate and control to low resistance state RL；
In transparent lower electrode input erasing threshold value pulse Preset, zero level is connect in electrode of metal, it can be by artificial synapse device
Part is from low resistance state RLRegulate and control to high-impedance state RH；
Add amplitude or pulsewidth lower than threshold value pulse (P in an electrode of devicesetOr Preset) pulse signal PM, will be another
One electrode ground connection, artificial synapse device can be regulated and controled to intermediate resistance state RM1, by changing pulse signal VPPulse parameter
The size of amplitude and pulsewidth can get different intermediate resistance state RMX(X 1,2,3 ...), as shown in Figure 4；Device is in different centres
When resistance state, conductance is different, and the handling capacity of electric current is also different, it is possible thereby to simulate the different bonding strength of biological synapse
To simulate different synapse weights；
(4) device synaptic plasticity is regulated and controled by electric signal；The electrode of metal 101 of this artificial synapse device is connect
Ground applies erasing threshold value pulse P at transparent lower 103 end of electrodereset, device is made to be in high-impedance state；Transparent lower electrode 103 is terminated
Ground applies pulse signal P at 101 end of electrode of metalM, device is adjusted from high-impedance state to some intermediate resistance state, and is declined quickly
When retreating to initial high-impedance state, which realizes STP function；
101 end of electrode of metal of the artificial synapse device is grounded, applies erasing threshold value arteries and veins at transparent lower 103 end of electrode
Rush Preset, device is made to be in high-impedance state；Transparent lower electrode 103 is grounded, applies pulse signal P at 101 end of electrode of metalM,
When artificial synapse device is adjusted from high-impedance state to some stable intermediate resistance state, which realizes LTP function；
The electrode of metal 101 of the artificial synapse device is grounded, applies erasing threshold value pulse at transparent lower 103 end of electrode
Preset, device is made to be in high-impedance state；By transparent lower 103 end of the electrode ground connection of device, continuously applied at 101 end of electrode of metal of device
Add two identical pulse signal PM, pulse signal P twiceMStimulation caused by the ratio between current amplitude A2/A1When greater than 1, device
Realize PPF function；
Apply pulse train P in the electrode of metal 101 of the artificial synapse device1, apply pulse in its transparent lower electrode
Sequence P2, change pulse train P1With P2Time interval δ t, the knots modification of synapse weight also changes correspondingly, and adjusts pulse train
Parameter, when the knots modification of synapse weight changes when changing with δ t, device realizes STDP function；
(5) reading of synapse weight；Level V is read in 101 input direct-current of electrode of metal of the artificial synapse deviceread,
Zero level is accessed in its transparent lower electrode 103, reads the electric current I for flowing through deviceread, as synapse weight, to realize artificial
The reading of cynapse device weight.
It is prominent under individual optical signal for the artificial synapse device for this photoelectric coupling memristor that embodiment provides
It is specific as follows to touch weight modulator approach:
(1) electricity initialization artificial synapse device resistance value；In 101 input direct-current of top electrode of the metal of the artificial synapse device
High level VF, zero level is connect in transparent lower electrode 103, so that the resistance states of the device are by initial resistance states Rin1Turn
Resistance value R after becoming initializationin2, resistance value R after electrically operatedin2Under, the resistance value of device can be by than VFLow direct current
It is flat to be adjusted；
(2) synaptic plasticity is adjusted using optical signal；In the transparent vertical input optical pulse signal of lower electrode 103
LM, by adjusting light pulse signal LMIntensity, frequency and pulsewidth so that cynapse device, which reaches different, stablizes intermediate resistance state RMX
(X 1,2,3 ...) simulates the different weights in biological synapse；
The electrode of metal 101 of the device is grounded, applies erasing threshold value pulse P in transparent lower electrodereset, make the device
Part is in high-impedance state, as adjusting light pulse signal LMWhen failing from high-impedance state to regulate and control device to some stable intermediate resistance state,
The artificial synapse device realizes STP function；
The electrode of metal 101 of the device is grounded, applies erasing threshold value pulse P in transparent lower electrodereset, make the device
Part is in high-impedance state, as light pulse signal LMWhen device is regulated and controled from high-impedance state to some stable intermediate resistance state, this is artificial prominent
Tentaculum part realizes LTP function；
The electrode of metal 101 of the device is grounded, applies erasing threshold value pulse P in transparent lower electrodereset, make the device
Part is in high-impedance state, and continuously electrode applies two identical light pulse signal L downM, the electricity caused by light pulse twice stimulates
Flow the ratio between amplitude A2/A1When greater than 1, device realizes PPF function；
(3) reading of synapse weight；Level V is read in 101 input direct-current of electrode of metal of the deviceread, transparent
Lower electrode 103 accesses zero level, reads the electric current I for flowing through deviceread, as synapse weight, to realize artificial synapse device
The reading of weight.
For the artificial synapse device for this photoelectric coupling memristor that embodiment provides, under electric signal and optical signal
Synapse weight regulates and controls method are as follows:
(1) electricity initialization device resistance value；In the 101 input direct-current high level of top electrode of the metal of the artificial synapse device
VF, zero level is connect in transparent lower electrode 103, so that the resistance states of the device are by initial resistivity state Rin1It is changed into initial
Resistance value R after changein2；In resistance value Rin2Under, the resistance value of the device can be by than VFLow DC level is adjusted；
(2) regulation of the electric signal to the artificial synapse device is individually used；In any one electricity of the artificial synapse device
Pole applies pulse signal VP, zero level pulse is connect in another electrode, device is regulated and controled to resistance state RM1；By changing pulse signal VP
Pulse parameter amplitude and pulsewidth size, obtain different intermediate resistance state RMX(X 1,2,3 ...)；
(3) the artificial synapse device is assisted to be converted to LTP study from STP study under electric signal operation using optical signal；
Apply erasing threshold value pulse signal P in the transparent lower electrode of the artificial synapse devicereset, it is grounded the top electrode of metal, it will
The artificial synapse device regulates and controls to high-impedance state RH；
Apply pulse P in the top electrode of metalM1, transparent lower electrode is grounded, which does not change, and device is real
Existing STP function；
Apply optical signal in transparent lower electrode, applies pulse P in the top electrode of metalM1, and change optical signal intensity,
Frequency and pulsewidth, electric pulse PM1The device is regulated and controled to stable intermediate resistance state RMX(X 1,2,3 ...)；At this point, optical signal is auxiliary
Electric impulse signal operated device is helped to be changed into LTP study from STP study；It is embodiment offer based on photoelectric coupling shown in Fig. 5
The artificial synapse device of memristor is converted to the curve synoptic diagram of LTP study in the case where there is light auxiliarily to regulate and control by STP study；
(4) learnt by the LTP that optical signal assists the device to carry out deeper degree under electric signal operation；By in the people
The transparent lower electrode of work cynapse device applies erasing threshold value pulse signal Preset, the top electrode of metal is grounded, will manually be dashed forward
Tentaculum part regulates and controls to high-impedance state RH；
Apply pulse P by the top electrode in its metalM1, transparent lower electrode is grounded, by the device resistance value regulate and control to
Intermediate resistance state RM1, at this point, the device realizes LTP function；
Apply optical signal in transparent lower electrode, and applies pulse P in the top electrode of metalM1, and change the strong of optical signal
Degree, frequency and pulsewidth, electric pulse PM1Device is regulated and controled to stable intermediate resistance state RM2, RM2Greater than RM1, at this point, optical signal assists
Electric impulse signal regulates and controls the LTP study that device realizes deeper degree；It is then embodiment offer based on photoelectric coupling shown in Fig. 6
The artificial synapse device of memristor carries out the curve synoptic diagram of the LTP study of deeper degree in the case where there is light auxiliarily to regulate and control.
(5) reading of synapse weight；Level V is read in 101 input direct-current of electrode of metal of the artificial synapse deviceread,
Zero level is accessed in transparent lower electrode 103, reads the electric current I for flowing through deviceread, as synapse weight, to realize artificial
The reading of cynapse device weight.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (4)
1. a kind of modulator approach of synaptic plasticity of artificial synapse device under electric signal, the artificial synapse device includes upper
Electrode, lower electrode and the function material layer between the upper and lower electrode；The function material layer is by having photoconduction effect
The material answered is made, and powers on extremely metal electrode, the electrode that lower electrode is electrically conducting transparent；Electric signal by the top electrode, under
Electrode input, optical signal are inputted by lower electrode；External electric signal is inputted from upper and lower two electrodes, and optical signal passes through lower electrode
Input；It is characterized by comprising the following steps:
(1) in the top electrode input direct-current level V of the artificial synapse deviceF, by its lower electrode ground connection, by adjusting limitation electricity
Stream carries out electric initialization to the artificial synapse device, changes the resistance states of artificial synapse device by initial resistance states
For the adjustable resistance state of low level；
(2) pass through the top electrode input write-in level V in the artificial synapse deviceset, by the artificial synapse device from high resistant
State RHRegulate and control to low resistance state RL；
By inputting erasing level V in lower electrodereset, top electrode is grounded, by the artificial synapse device from low resistance state RLIt adjusts
It controls to high-impedance state RH；
The artificial synapse device is in high-impedance state RHWhen, conductance is very low, and electric current handling capacity is small, using in a state in which under
Artificial synapse device simulates the situation that biological synapse bonding strength is very weak, synapse weight is very low；
The artificial synapse device is in low resistance state RLWhen, conductance is very high, and electric current handling capacity is strong, using in a state in which under
Artificial synapse device simulates the situation that biological synapse bonding strength is very strong, synapse weight is very big；
(3) pass through the top electrode input write-in threshold value pulse P in the artificial synapse deviceset, by its lower electrode ground connection, by people
Work cynapse device is from high-impedance state RHRegulate and control to low resistance state RL；
By inputting erasing threshold value pulse P in lower electrodereset, its top electrode is grounded, by artificial synapse device from low resistance state RL
Regulate and control to high-impedance state RH；
By adding amplitude or pulsewidth to be lower than the pulse signal P of threshold value pulse in any one electrode of the artificial synapse deviceM, will
Another electrode ground connection, artificial synapse device is regulated and controled to intermediate resistance state RM1；By changing pulse signal PMPulse parameter width
The size of value and pulsewidth, obtains different intermediate resistance state RMX；
When the artificial synapse device is in different intermediate resistance states, conductance is different, and electric current handling capacity is different, using being in
Artificial synapse device under this state simulates the different synapse weight of biological synapse；
(4) when the artificial synapse device is in high resistant, and pulse signal PM1Fail to regulate and control device from high-impedance state steady to some
Fixed intermediate resistance state, but from intermediate resistance state volatibility the high-impedance state that fails back, the artificial synapse device realize STP function；
When the artificial synapse device is in high resistant, pulse signal PM2Device is regulated and controled from high-impedance state to some intermediate resistance state, device
Part fails back resistance value from the intermediate resistance state volatibility when stablizing intermediate resistance state lower than non-volatile some of high-impedance state, described
Artificial synapse device realizes LTP function；
When the artificial synapse device is in high-impedance state, two phases are continuously applied on the same electrode of the artificial synapse device
Same pulse signal PM3, the ratio between current amplitude caused by the stimulation of pulse signal twice A2/A1It is described artificial prominent when greater than 1
Tentaculum part realizes PPF function；
When the top electrode in the artificial synapse device applies pulse train PS1, apply pulse train P in its lower electrodeS2, pass through
Change pulse train PS1With PS2Time interval δ t so that the knots modification of synapse weight also changes correspondingly；By adjusting pulse sequence
The parameter of column realizes STDP function when synapse weight changes with δ t and changed；
(5) level V is read by the top electrode input in the artificial synapse deviceread, artificial to realize by its lower electrode ground connection
The reading of cynapse device weight.
2. a kind of modulator approach of synaptic plasticity of artificial synapse device under optical signal, the artificial synapse device includes upper
Electrode, lower electrode and the function material layer between the upper and lower electrode；The function material layer is by having photoconduction effect
The material answered is made, and powers on extremely metal electrode, the electrode that lower electrode is electrically conducting transparent；Electric signal by the top electrode, under
Electrode input, optical signal are inputted by lower electrode；It is characterized by comprising the following steps:
(1) in the top electrode input direct-current high level V of the artificial synapse deviceF, its lower electrode ground connection is limited by adjusting
Electric current, so that the resistance states of the artificial synapse device are changed into the adjustable resistance state of light pulse by initial resistivity state；
(2) in the vertical input optical pulse signal L of lower electrode of the artificial synapse deviceM, by adjusting light pulse signal LMIt is strong
Degree, frequency and pulsewidth, so that the artificial synapse device reaches different stable intermediate resistance state RMX, to simulate in biological synapse
Different weights；Wherein, X is natural number；
When the artificial synapse device is in high-impedance state, and the light pulse signal L appliedM1Fail to regulate and control device from high-impedance state
To some stable intermediate resistance state but from the intermediate resistance state volatibility the high-impedance state that fails back, the artificial synapse device are realized
STP function；
When the artificial synapse device is in high-impedance state, light pulse signal LM2Device is regulated and controled from high-impedance state to some intermediate resistance
State, device fail back resistance value from the intermediate resistance state volatibility when stablizing intermediate resistance state lower than non-volatile some of high-impedance state,
The artificial synapse device realizes LTP function；
When the artificial synapse device is in high-impedance state, two identical light pulse signal L are continuously appliedM3, when light pulse twice
The ratio between current amplitude caused by stimulating A2/A1When greater than 1, which realizes PPF function；
(3) level V is read by the top electrode input in the artificial synapse deviceread, lower electrode is grounded, it is artificial prominent to realize
The reading of tentaculum part weight.
3. a kind of synapse weight modulator approach of artificial synapse device under electric signal and optical signal coupling, described artificial prominent
Tentaculum part includes top electrode, lower electrode and the function material layer between the upper and lower electrode；The function material layer by
Material with photoconductive effect is made, and powers on extremely metal electrode, the electrode that lower electrode is electrically conducting transparent；Electric signal passes through institute
Top electrode, the input of lower electrode are stated, optical signal is inputted by lower electrode；It is characterized by comprising the following steps:
(1) pass through the top electrode input direct-current high level V in the artificial synapse deviceF, by its lower electrode ground connection, pass through tune
Section limitation electric current so that the resistance states of the artificial synapse device be changed into photoelectric coupling signal by initial resistance states can
The resistance state of adjusting；
(2) apply erasing threshold value pulse signal P in the lower electrode of the artificial synapse devicereset, top electrode is grounded, it will be artificial
Cynapse device regulates and controls to high-impedance state RH；Apply pulse P in top electrodeM1, lower electrode is grounded, which occurs one
Volatibility resistive from high-impedance state to low resistance state, resulting devices resistance value return to high-impedance state, resistance value does not change, at this point, the people
Work cynapse device realizes STP function；
While lower electrode section applies optical signal, apply pulse P in top electrodeM1, by change the intensity of optical signal, frequency with
Pulsewidth regulates and controls device to non-volatile stable intermediate resistance state RMX, assist electric impulse signal to regulate and control the people by optical signal
Work cynapse device is changed into LTP study from STP study；
(3) add erasing threshold value pulse signal P in the lower electrode of the artificial synapse devicereset, top electrode is grounded, will manually be dashed forward
Tentaculum part regulates and controls to high-impedance state RH；Apply pulse P in top electrodeM1, lower electrode is grounded, the resistance value quilt of the artificial synapse device
Regulate and control to non-volatile intermediate resistance state RM1, the artificial synapse device realization LTP function；
Apply optical signal in lower electrode, in the pulse P that top electrode appliesM1, by changing intensity, frequency and the pulsewidth of optical signal,
Device is regulated and controled to non-volatile stable intermediate resistance state RM2, RM2Less than RM1, it is real that optical signal assists electric impulse signal to regulate and control device
The LTP study of existing deeper degree；
(4) level V is read by the top electrode input in the artificial synapse deviceread, zero level is accessed in lower electrode, is come real
The reading of existing artificial synapse device resistance state.
4. modulator approach as claimed in any one of claims 1 to 3, which is characterized in that it is described limitation electric current range be 1nA~
100mA。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710164794.9A CN106981567B (en) | 2017-03-20 | 2017-03-20 | A kind of artificial synapse device and its modulator approach based on photoelectric coupling memristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710164794.9A CN106981567B (en) | 2017-03-20 | 2017-03-20 | A kind of artificial synapse device and its modulator approach based on photoelectric coupling memristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106981567A CN106981567A (en) | 2017-07-25 |
| CN106981567B true CN106981567B (en) | 2019-11-05 |
Family
ID=59338840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710164794.9A Active CN106981567B (en) | 2017-03-20 | 2017-03-20 | A kind of artificial synapse device and its modulator approach based on photoelectric coupling memristor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106981567B (en) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6293963B1 (en) * | 2017-08-31 | 2018-03-14 | Tdk株式会社 | Array control device including neuromorphic element, discretization step size calculation method and program |
| CN107909146B (en) * | 2017-11-13 | 2021-09-17 | 中国科学院微电子研究所 | Neuron circuit based on volatile threshold transition device |
| CN108428700B (en) * | 2018-03-15 | 2020-11-24 | 西南交通大学 | Preparation method of device with stable coexistence of memristor and negative differential effect at room temperature |
| CN108664735B (en) * | 2018-05-11 | 2020-06-09 | 华中科技大学 | STDP pulse design method based on multivalued memristor and realization method of diversified STDP |
| CN108920845B (en) * | 2018-07-06 | 2023-02-21 | 福州大学 | Method for realizing conductivity adjustment of zinc oxide linear transistor |
| CN109065711B (en) * | 2018-08-01 | 2022-05-03 | 河北大学 | Solid electrolyte resistive random access memory and preparation method thereof |
| CN110794635B (en) * | 2018-08-01 | 2022-08-26 | 西安电子科技大学 | Low-power-consumption optical synapse device based on vertical cavity semiconductor optical amplifier |
| CN109148683B (en) * | 2018-08-07 | 2020-07-07 | 北京航空航天大学 | Van der Waals heterojunction memristor based on black phosphorus and black phosphorus oxide |
| CN109037443B (en) * | 2018-08-07 | 2020-07-31 | 电子科技大学 | Based on a-SiNxSPR (surface plasmon resonance) nerve synapse device with memristive effect and preparation method thereof |
| CN109065713B (en) * | 2018-08-07 | 2020-07-31 | 电子科技大学 | SPR (surface plasmon resonance) nerve synapse device based on a-Si memristor effect and preparation method thereof |
| GB201813748D0 (en) | 2018-08-23 | 2018-10-10 | Univ Hull | Optically switchable memory |
| CN109460819B (en) * | 2018-10-25 | 2022-04-29 | 清华大学 | Method and device for simulating optical synapse of organism |
| CN109449289B (en) * | 2018-11-01 | 2022-12-09 | 中国科学院宁波材料技术与工程研究所 | Light-excited nerve synapse bionic memristor and preparation method thereof |
| CN109768160B (en) * | 2019-01-23 | 2023-04-18 | 济南大学 | Molybdenum disulfide/zinc sulfide dual-functional layer structure memristor and preparation method thereof |
| CN110690345A (en) * | 2019-08-30 | 2020-01-14 | 深圳大学 | Light-operated memristor and preparation method thereof |
| CN110854265B (en) * | 2019-09-06 | 2021-10-08 | 华东理工大学 | Bionic memristor based on polydopamine-modified black phosphorus nanosheet and preparation method and application thereof |
| CN111312899B (en) * | 2020-01-23 | 2021-10-26 | 浙江大学 | Photoelectric nerve synapse device with zero energy consumption and preparation method thereof |
| CN111323654B (en) * | 2020-02-28 | 2021-08-06 | 北京大学 | Synapse simulation method and system of resistive device |
| CN111525027B (en) * | 2020-03-02 | 2022-10-14 | 中国科学院宁波材料技术与工程研究所 | Method for reversibly regulating and controlling conductance of memristor by using optical signal |
| CN112349838A (en) * | 2020-10-27 | 2021-02-09 | 复旦大学 | Multi-mode modulated flexible perovskite neurosynaptic device and preparation method thereof |
| CN112951987B (en) * | 2021-01-26 | 2022-10-14 | 中国科学院宁波材料技术与工程研究所 | Method for realizing positive and negative photoconduction in memristor by utilizing optical signal |
| CN113629186A (en) * | 2021-07-21 | 2021-11-09 | 广东工业大学 | Pain receptor constructed based on indium sulfide thin film and application thereof |
| CN114023877B (en) * | 2021-11-03 | 2023-07-11 | 陕西科技大学 | Perovskite thin film memristor based on doped two-dimensional halide and preparation method thereof |
| CN115696011B (en) * | 2022-10-27 | 2024-05-14 | 华中科技大学 | Phase change material-based electrically controllable color filter array and artificial vision system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010106116A1 (en) * | 2009-03-17 | 2010-09-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Neural network circuit comprising nanoscale synapses and cmos neurons |
| CN104597563A (en) * | 2014-12-31 | 2015-05-06 | 清华大学 | Waveguide type memristor based on metamaterial |
| CN105761750A (en) * | 2016-02-04 | 2016-07-13 | 华中科技大学 | Memristor-based multivalued logic device and operating method thereof |
-
2017
- 2017-03-20 CN CN201710164794.9A patent/CN106981567B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010106116A1 (en) * | 2009-03-17 | 2010-09-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Neural network circuit comprising nanoscale synapses and cmos neurons |
| CN104597563A (en) * | 2014-12-31 | 2015-05-06 | 清华大学 | Waveguide type memristor based on metamaterial |
| CN105761750A (en) * | 2016-02-04 | 2016-07-13 | 华中科技大学 | Memristor-based multivalued logic device and operating method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 《Energy-Efficient Hybrid Perovskite Memristors and Synaptic》;Zhengguo Xiao and Jinsong Huang;《Adv. Electron. Mater.》;20160503;(1600100)1-8 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106981567A (en) | 2017-07-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106981567B (en) | A kind of artificial synapse device and its modulator approach based on photoelectric coupling memristor | |
| John et al. | Ultralow power dual-gated subthreshold oxide neuristors: an enabler for higher order neuronal temporal correlations | |
| JP6644064B2 (en) | Neuromorphic synapses, their arrays, and their systems | |
| WO2021098821A1 (en) | Method for data processing in neural network system, and neural network system | |
| Serrano-Gotarredona et al. | A proposal for hybrid memristor-CMOS spiking neuromorphic learning systems | |
| KR102230784B1 (en) | Synapse circuit for spike-timing dependent plasticity(stdp) operation and neuromorphic system | |
| CN102456157B (en) | Neuron chip and neural network | |
| Han et al. | Bioinspired photoresponsive single transistor neuron for a neuromorphic visual system | |
| Chakma et al. | Memristive mixed-signal neuromorphic systems: Energy-efficient learning at the circuit-level | |
| KR102313075B1 (en) | Unit having an artificial neuron and a memristor | |
| US20240170060A1 (en) | Data processing method based on memristor array and electronic apparatus | |
| An et al. | Realizing behavior level associative memory learning through three-dimensional memristor-based neuromorphic circuits | |
| Nandakumar et al. | Building brain-inspired computing systems: Examining the role of nanoscale devices | |
| KR20150034900A (en) | Synapse circuit for connecting neuron circuits, unit cell composing neuromorphic circuit, and neuromorphic circuit | |
| WO2019202427A1 (en) | Resistive processing unit architecture with separate weight update and inference circuitry | |
| WO2022041091A1 (en) | New brain-like visual system | |
| Chen et al. | Biological function simulation in neuromorphic devices: from synapse and neuron to behavior | |
| Gerasimova et al. | Design of memristive interface between electronic neurons | |
| KR20170080431A (en) | Neuromorphic Device and Methods of Adjusting Resistance Change Ratio of the Same | |
| Sun et al. | Advanced synaptic devices and their applications in biomimetic sensory neural system | |
| US10558910B2 (en) | Neuromorphic device and method of adjusting a resistance change ratio thereof | |
| KR102499691B1 (en) | Integrate-and-fire neuron circuit using single-gated feedback field-effect transistor | |
| Zhu et al. | CMOS-compatible neuromorphic devices for neuromorphic perception and computing: a review | |
| Zhang et al. | The framework and memristive circuit design for multisensory mutual associative memory networks | |
| Lv et al. | Post-silicon nano-electronic device and its application in brain-inspired chips |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |