CN106972103B - The method for preparing PEDOT:PSS/Si heterojunction solar battery - Google Patents
The method for preparing PEDOT:PSS/Si heterojunction solar battery Download PDFInfo
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Abstract
A method of PEDOT:PSS/Si heterojunction solar battery is prepared, Triton X-100 surfactant is mixed in PEDOT:PSS solution, the mass fraction of the Triton X-100 surfactant of doping is 0.75%-2%, purity 98%；Obtained PEDOT:PSS solution is coated in silicon chip surface, is put into vacuum utensil and is evacuated, the indoor air pressure of vacuum is made to reach 1-100Pa, keep air pressure 3min, to remove the bubble in PEDOT:PSS solution；The silicon wafer for being coated with PEDOT:PSS solution is taken out, with sol evenning machine spin coating PEDOT:PSS solution film forming, spin-coating time 60s, revolving speed 6000rpm；Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3-30min, 80-200 DEG C of annealing temperature；Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and is annealed, annealing time 15min, 150 DEG C of annealing temperature；After annealing, metal Ag grid line is steamed on PEDOT:PSS film using thermal evaporation apparatus, full Al back electrode is steamed on the film of cesium carbonate；Controlling the closed humidity for preparing environment during the preparation process is 15-40%.
Description
Technical field
The present invention relates to a kind of preparation methods of PEDOT:PSS/Si heterojunction solar battery.
Background technique
Poly- (3,4- ethylenedioxy thiophene): poly styrene sulfonate/silicon (PEDOT:PSS/Si) heterojunction solar battery is
A kind of novel solar cell.The advantages such as simple, low temperature low power consuming, process costs are low with preparation process, thus PEDOT:PSS/
The research of Si heterojunction solar battery has obtained extensive concern and quickly development, and in the short several years, transformation efficiency
Huge promotion is obtained.Although efficiency is improved, it is PEDOT:PSS/Si different that battery open circuit voltage is still lower
One of the main problem of matter connection solar cell.
The main surfactant (0.1%-0.5%) using lower quality score carries out PEDOT:PSS solution at present
Doping, spin coating PEDOT:PSS solution form a film in silicon chip surface.It after spin-coating film, is directly made annealing treatment, then is made on hot plate
Standby positive and negative electrode.Its main problem be do not recognize surfactant content be improve effective minority carrier life time it is main because
Element, part Experiment use higher surface-active contents, do not control effectively experiment damp condition but, do not exist to infiltration
The PEDOT:PSS solution of silicon wafer carries out reduced pressure treatment because without obtaining good effect.
Such as Q.Liu, M.Ono, Z.Tang, R.Ishikawa, K.Ueno, and H.Shirai, " Highly
efficient crystalline silicon/Zonyl fluorosurfactant-treated organic
heterojunction solar cells,"Applied Physics Letters,vol.100,p.183901,
2012.J.P.Thomas and K.T.Leung,"Defect-Minimized PEDOT:PSS/Planar-Si Solar
Cell with Very High Efficiency,"Advanced Functional Materials,vol.24,pp.4978-
4985,Aug 20 2014.M.Yameen,S.K.Srivastava,P.Singh,K.Turan,P.Prathap,Vandana,et
al.,"Low temperature fabrication of PEDOT:PSS/micro-textured silicon-based
heterojunction solar cells,"Journal of Materials Science,vol.50,pp.8046-8056,
Dec 2015. etc.
Above-mentioned process can not obtain high effective minority carrier life time, and then hardly result in high battery open circuit voltage, lead to
Chang Youxiao minority carrier life time is in 50-100 μ s, and the open-circuit voltage of solar cell is in 580-600mV.
Summary of the invention
The purpose of the present invention is overcome existing PEDOT:PSS/Si heterojunction solar battery preparation process open-circuit voltage low
Disadvantage, a kind of method for proposing new preparation high open circuit voltage PEDOT:PSS/Si heterojunction solar battery.
The present invention prepare PEDOT:PSS/Si heterojunction solar battery process the following steps are included:
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 0.75%-2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 1-100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3-30min, annealing
80-200 DEG C of temperature；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 15-40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
The present invention improves the work function of PEDOT:PSS film, work content using the surfactant of doping high quality score
Several increases can improve effective minority carrier life time of silicon wafer, and the raising of effective minority carrier life time then can effectively improve solar cell
Open-circuit voltage.
Compared with the prior art, the advantages of the present invention are as follows: one, by the surface for adulterating 0.75%-2% high quality score
Activating agent makes open-circuit voltage 610mV of solar cell or so；Two, by second step to the processing of film under low vacuum environment,
Bubble in removal solution further increases the sun to obtain quality of forming film more preferably film in subsequent spin coating process
The open-circuit voltage of battery, reaches 620mV or so；Three, pass through the annealing process of PEDOT:PSS film and the humidity ring of preparation
Border, to ensure to obtain high open-circuit voltage.
Detailed description of the invention
Effective minority carrier life time schematic diagram that Fig. 1 present invention process obtains；
The basic structure schematic diagram of Fig. 2 PEDOT:PSS/Si heterojunction solar battery；
Fig. 3 annealing conditions are in 200 DEG C of effective minority carrier life time schematic diagrames of annealing 30min；
Fig. 4 damp condition is the effective minority carrier life time schematic diagram of preparation process 40%；
Fig. 5 demarcates the AFM surface potential curve of golden sample；
Fig. 6 present invention process condition PEDOT:PSS surface potential curve；
Surface potential curve of Fig. 7 annealing conditions in 200 DEG C of annealing 30min；
Fig. 8 damp condition surface potential curve at 40%.
Specific embodiment
The present invention is further illustrated below in conjunction with the drawings and specific embodiments.
The step of preparation method of the present invention, is as follows:
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 0.75%-2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 1-100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3-30min, annealing
80-200 DEG C of temperature；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 15-40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Fig. 2 is the battery structure of PEDOT:PSS/Si heterojunction solar battery, structure Ag-PEDOT:PSS-Si-
Cs2CO3-Al。
The present invention using highly doped mass fraction surfactant to the pattern of the improved effect of PEDOT:PSS film forming with
And the surface work function of film forming, and then the effect that PEDOT:PSS is passivated silicon chip surface is improved, finally improve preparation
The open-circuit voltage of PEDOT:PSS/Si heterojunction solar battery.PEDOT:PSS solution by uniform fold in silicon chip surface carries out
It is vacuum-treated the bubble removed in solution, to obtain quality of forming film more preferably film in subsequent spin coating process, further
Improve the open-circuit voltage of solar cell.And in preparation process influence solar batteries technique and environmental factor into
Row control, to ensure the acquisition of the higher open-circuit voltage of solar cell.Due to the surface potential and gold of undoped PEDOT:PSS
It is close, from the comparison of Fig. 5 and Fig. 6 it is found that the present invention can obtain higher surface potential, from shown in Fig. 1 seeing as surface
The increase of potential improves effective minority carrier life time.
Embodiment 1
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 0.75%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 2
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 3
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 1.2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 4
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 1Pa, keeps air pressure 3min, to remove the bubble in PEDOT:PSS solution；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 5
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 0.8%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min to remove the gas in PEDOT:PSS solution
Bubble,；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 6
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 20Pa, keeps air pressure 3min, to remove the bubble in PEDOT:PSS solution；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 7
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 1.5%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 30min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Fig. 3 is effective minority carrier life time figure under 7 technique of embodiment, and Fig. 7 is the surface potential figure of 7 process film of embodiment.
As shown in Figure 3 and Figure 7, under 7 process conditions of embodiment, the technique for being compared to optimal experiment parameter, due to surface work function
It reduces (5.2eV) and results in effective minority carrier life time decline (150 μ s), solar batteries reduce.
Embodiment 8
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 9
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 10min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 10
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
80 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 11
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 1.5%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
200 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 12
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 1.5%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
150 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 13
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
150 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 15% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 14
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 2%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
150 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 25% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Embodiment 15
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polyphenyl second
Qula is mixed in alkene sulfonate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping is logical
(TritonX-100) mass fraction of surfactant is 1.5%, purity 98%；
The prepared PEDOT:PSS solution of the first step is coated in silicon chip surface, is put into vacuum utensil machine of using by second step
Tool pumping gas makes the indoor air pressure of vacuum reach 100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, rotation
Apply time 60s, revolving speed 6000rpm.Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3min, annealing temperature
180 DEG C of degree；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing
Time 15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, in cesium carbonate on PEDOT:PSS film
Full Al back electrode is steamed above film；
It is 40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
Fig. 4 is effective minority carrier life time figure of 15 technique of embodiment, and Fig. 8 is the surface potential of film under 15 technique of embodiment
Figure.It can be seen that work function is declined (5.5eV) in the technique of the optimal experiment parameter of the technics comparing, and then cause effectively
Minority carrier life time declines (280 μ s), and battery open circuit voltage reduces.
Claims (1)
1. a kind of method for preparing PEDOT:PSS/Si heterojunction solar battery, which is characterized in that the preparation method step
It is as follows:
The first step, in German Heraeus Products, the poly- 3,4-ethylene dioxythiophene of model PH1000: polystyrene sulphur
Qula is mixed in hydrochlorate (PEDOT:PSS) solution and leads to (Triton X-100) surfactant, and the Qula of doping leads to (Triton
X-100) mass fraction of surfactant is 0.75%-2%, purity 98%；
Second step, the PEDOT:PSS solution that the first step is prepared are coated in silicon chip surface, are put into vacuum utensil with machinery
Pumping gas makes the indoor air pressure of vacuum reach 1-100Pa, keeps air pressure 3min, to remove the gas in PEDOT:PSS solution
Bubble；
Third step takes out the silicon wafer for being coated with PEDOT:PSS solution, with sol evenning machine spin coating PEDOT:PSS solution film forming, when spin coating
Between 60s, revolving speed 6000rpm；Silicon wafer is placed on hot plate after film forming and is made annealing treatment, annealing time 3-30min, annealing temperature
80-200℃；
Silicon wafer is again placed on hot plate after the back side spin coating cesium carbonate solution of silicon wafer, film forming and anneals by the 4th step, annealing time
15min, 150 DEG C of annealing temperature；
5th step after annealing, steams metal Ag grid line using thermal evaporation apparatus, on the film of cesium carbonate on PEDOT:PSS film
Steam full Al back electrode in face；
It is 15-40% that the closed humidity for preparing environment is controlled in the preparation process of the first step to the 5th step.
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| CN108183150B (en) * | 2017-12-29 | 2020-07-24 | 江苏悦阳光伏科技有限公司 | Heterojunction photovoltaic cell and preparation method thereof |
| CN108565341B (en) * | 2018-05-04 | 2021-07-16 | 宝德照明集团有限公司 | Silicon heterojunction solar cell and preparation method thereof |
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