CN106971992B - A kind of half-bridge power semiconductor module - Google Patents
A kind of half-bridge power semiconductor module Download PDFInfo
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- CN106971992B CN106971992B CN201710321481.XA CN201710321481A CN106971992B CN 106971992 B CN106971992 B CN 106971992B CN 201710321481 A CN201710321481 A CN 201710321481A CN 106971992 B CN106971992 B CN 106971992B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of half-bridge power semiconductor modules, comprising: positioned at the semiconductor chip group of bottom；Positioned at the low sense composite bus bar of top layer, the two sides of low sense composite bus bar, which each extend over, is provided with exchange interface and positive and negative layer interface, and low sense composite bus bar includes the negative layer busbar of lamination setting, positive layer busbar and exchanges layer busbar；Several confluence busbar groups parallel with one another positioned at middle layer, wherein the bottom end of each confluence busbar group is connected with the corresponding semiconductor chip in semiconductor chip group, and the top confluence end of each busbar group of converging is connected with the correspondence busbar of low sense composite bus bar.Semiconductor chip group is the function of tonic chord part of power module, main circuit external interface of the exchange interface and positive and negative layer interface of low sense composite bus bar as power module, confluence busbar group realizes the conductive connection of low sense composite bus bar and semiconductor chip group, the current sharing between confluence busbar group and each chip of semiconductor chip group has been taken into account, the low perception and current sharing of power module are improved.
Description
Technical field
The present invention relates to power electronics fields, more particularly to a kind of half-bridge power semiconductor module.
Background technique
With the development of science and technology, power electronic technique achieves many achievements.Wherein, power module is electric power electricity
Common component in son.
Power module is the core component of current transformer, is widely used in the fields such as rail traffic and industrial frequency conversion.Currently, interior
Portion is that the power module of half-bridge circuit is concentrated mainly on low pressure middle low power section, is mainly adopted for high-power semiconductor module
The scheme being laid out with single tube.Especially in high-power application aspect, there are many more disadvantage, main tables for current power module
Now as follows: since it uses mono-tube design, power density is not high；The connection of inside chip to external power terminal is mainly still adopted
With traditional copper bar, keep its low perception poor；Multi-chip current sharing is poor or the inductance of low-inductance bus is arranged using module-external
Mode is flowed, current sharing is difficult to control.
Therefore, the low perception and current sharing for how improving power module, are that those skilled in the art need to solve at present
Technical problem.
Summary of the invention
The object of the present invention is to provide a kind of half-bridge power semiconductor modules, and the low perceptual and equal of power module can be improved
Fluidity.
In order to solve the above technical problems, the present invention provides the following technical scheme that
A kind of half-bridge power semiconductor module, comprising:
Positioned at the semiconductor chip group of bottom；
Positioned at the low sense composite bus bar of top layer, it is described it is low sense composite bus bar two sides each extend over be provided with exchange interface and
Positive and negative layer interface, the low sense composite bus bar include the negative layer busbar of lamination setting, positive layer busbar and exchange layer busbar；
Several confluence busbar groups parallel with one another positioned at middle layer, wherein each confluence bottom end of busbar group and described
Corresponding semiconductor chip connection in semiconductor chip group, the top confluence end of each confluence busbar group and the low sense are compound
The correspondence busbar of busbar connects.
Preferably, each confluence busbar group includes:
Just converge busbar, tube chip in the correspondence in the bottom end pin and the semiconductor chip group of the positive confluence busbar
Collector connection, it is described it is positive confluence busbar top confluence end connected with the positive layer busbar；
Bear confluence busbar, tube chip under the correspondence in the bottom end pin and the semiconductor chip group of the negative confluence busbar
Emitter connection, it is described it is negative confluence busbar top confluence end connected with the negative layer busbar；
Exchange confluence busbar, the correspondence upper tube in the bottom end pin and the semiconductor chip group of the exchange confluence busbar
Chip is connected with the public pole of lower tube chip, and the top confluence end of the exchange confluence busbar exchanges the connection of layer busbar with described.
Preferably, the positive confluence busbar in each confluence busbar group, negative confluence busbar are mutually put down with confluence busbar is exchanged
Row, and insulation division is equipped between two adjacent confluence busbars.
Preferably, each pin of the bottom end of the confluence busbar group is two layers of bending pin.
Preferably, the low sense composite bus bar is equipped with the interface holes of preset number, the top of the confluence busbar group
Each confluence end is equipped with and the confluence end protrusion of corresponding interface holes cooperation grafting.
Preferably, the predeterminated position between the two neighboring pin of the positive confluence busbar is provided with an extending direction
Away from the confluence end of each pin protrusion.
Preferably, the predeterminated position between the two neighboring pin of the negative confluence busbar is provided with an extending direction
Away from the confluence end of each pin protrusion.
Preferably, the predeterminated position between the two neighboring pin of the exchange confluence busbar is provided with an extension side
To away from the confluence end of each pin protrusion.
Preferably, the low sense composite bus bar is equipped with several in the negative layer busbar, positive layer busbar and exchanging layer
The through-hole of encapsulating insulating layer between busbar.
Compared with prior art, above-mentioned technical proposal has the advantage that
A kind of half-bridge power semiconductor module provided by the embodiment of the present invention, comprising: positioned at the semiconductor chip of bottom
Group；Positioned at the low sense composite bus bar of top layer, it is low sense composite bus bar two sides each extend over be provided with exchange interface and positive negative layer connect
Mouthful, low sense composite bus bar includes the negative layer busbar of lamination setting, positive layer busbar and exchanges layer busbar；It is parallel with one another positioned at middle layer
Several confluence busbar groups, wherein the bottom end of each confluence busbar group is connected with the corresponding semiconductor chip in semiconductor chip group,
The top confluence end of each confluence busbar group is connected with the correspondence busbar of low sense composite bus bar.In the technical scheme, by power mould
Block has been divided into three layers, from bottom to top respectively semiconductor chip group, confluence busbar group and low sense composite bus bar, wherein semiconductor
Chipset is the function of tonic chord part of power module, and the exchange interface and positive and negative layer interface of low sense composite bus bar are as power module
Main circuit external interface, confluence busbar group are realized the conductive connection of low sense composite bus bar and semiconductor chip group, are constituted entire
The current sharing between confluence busbar group and each chip of semiconductor chip group has been taken into account in conductive input and output circuit, the circuit,
Parasitic inductance greatly reduces, and improves the low perception and current sharing of power module.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is half-bridge power semiconductor module structural schematic diagram provided by a kind of specific embodiment of the present invention；
Fig. 2 is the low sense composite bus bar knot of half-bridge power semiconductor module provided by a kind of specific embodiment of the present invention
Structure schematic diagram；
Fig. 3 is the main electricity of power interconnection in half-bridge power semiconductor module provided by a kind of specific embodiment of the present invention
Road schematic diagram；
Fig. 4 is the confluence busbar group structure of half-bridge power semiconductor module provided by a kind of specific embodiment of the present invention
Schematic diagram.
Specific embodiment
Core of the invention is to provide a kind of half-bridge power semiconductor module, and the low perceptual and equal of power module can be improved
Fluidity.
It is understandable in order to enable the above objects, features and advantages of the present invention to become apparent, with reference to the accompanying drawing to this hair
Bright specific embodiment is described in detail.
Detail is elaborated in the following description to fully understand the present invention.But the present invention can with it is a variety of not
Other way described herein is same as to implement, those skilled in the art can do class without violating the connotation of the present invention
Like popularization.Therefore the present invention is not limited by following public specific embodiment.
Fig. 1 and Fig. 2 are please referred to, Fig. 1 is half-bridge power semiconductor module provided by a kind of specific embodiment of the present invention
Structural schematic diagram；Fig. 2 is the compound mother of low sense of half-bridge power semiconductor module provided by a kind of specific embodiment of the present invention
Arrange structural schematic diagram.
A kind of specific embodiment of the invention provides a kind of half-bridge power semiconductor module, comprising: positioned at bottom
Semiconductor chip group 1；Positioned at the low sense composite bus bar 2 of top layer, the two sides of low sense composite bus bar 2, which each extend over, to be provided with exchange and connects
Mouth 2a and positive and negative layer interface 2b is exchanged outside the main circuit of interface 2a and positive and negative layer interface 2b as half-bridge power semiconductor module
Interface, low sense composite bus bar 2 include the negative layer busbar 21 of lamination setting, positive layer busbar 22 and exchange layer busbar 23；Positioned at centre
Layer several confluence busbar groups 3 parallel with one another, wherein corresponding half in the bottom end and semiconductor chip group 1 of each confluence busbar group 3
Conductor chip connection, the top confluence end of each busbar group 3 of converging are connected with the correspondence busbar of low sense composite bus bar 2.
In the present embodiment, as shown in Figure 1, the half-bridge power semiconductor module is a kind of power module, in this implementation
Interconnected in mode using low sense and stream design, from bottom and on be divided into three layers: semiconductor chip group 1, busbar group 3 of converging and low
Feel composite bus bar 2.Wherein, semiconductor chip group 1 includes several semiconductor chips, and semiconductor chip group 1 is the function of power module
It can part.It include a upper tube chip and a lower tube chip in the same semiconductor chip.
In the present embodiment, low sense composite bus bar, that is, composite bus bar, also referred to as low-inductance bus.It is located at semiconductor chip
The upper area of group, as shown in Fig. 2, that includes three layers of conductive bus bars: direct current positive layer busbar 22, direct current negative layer busbar 21 and friendship
Fluid layer busbar 23.In the present embodiment, arrangement of the three layers of conductive bus bar on from outside to semiconductor chip direction is respectively as follows: friendship
Fluid layer busbar 23, negative layer busbar 21 and positive layer busbar 22, three layers of conductive bus bar lamination arrangement, between each other by insulating layer 24 every
From, wherein preferred low sense composite bus bar be equipped with it is several be used for negative layer busbar 21, positive layer busbar 22 with exchange layer busbar 23 it
Between encapsulating insulating layer through-hole, insulating materials can be potted in the gap between three layers of conductive bus bar by each through-hole and be formed
Insulating layer.
It should be noted that in the present embodiment, the only preferred arrangement mode of above-mentioned three layers of conductive bus bar, to three layers
The up-down structure relationship of conductive bus bar does not limit, and specifically depends on the circumstances.
In the present embodiment, power module three layers have been divided into, respectively semiconductor chip group, confluence are female from bottom to top
Row's group and low sense composite bus bar, wherein semiconductor chip group is the function of tonic chord part of power module, the exchange of low sense composite bus bar
The main circuit external interface of interface and positive and negative layer interface as power module, confluence busbar group are realized low sense composite bus bar and are partly led
The conductive connection of body chipset constitutes entire conductive input and output circuit, which has taken into account confluence busbar group and partly led
Current sharing between each chip of body chipset, parasitic inductance greatly reduce, and improve the low perception and current sharing of power module.
Fig. 3 and Fig. 4 are please referred to, Fig. 3 is half-bridge power semiconductor module provided by a kind of specific embodiment of the present invention
The main circuit schematic diagram of middle power interconnection；Fig. 4 is half-bridge power semiconductor module provided by a kind of specific embodiment of the present invention
The confluence busbar group structural schematic diagram of block.
Further, respectively confluence busbar group 3 includes: positive confluence busbar 31, the bottom end pin and half of the positive busbar 31 that converges
The collector connection of tube chip in correspondence in conductor chip group 1, the top confluence end of the positive busbar 31 that converges and positive layer busbar connect
It connects；Negative confluence busbar 32, bears the emitter of tube chip under the correspondence in the bottom end pin and semiconductor chip group 1 of confluence busbar 32
The top confluence end of connection, negative confluence busbar 32 is connected with negative layer busbar；Exchange confluence busbar 33, the bottom of exchange confluence busbar 33
End pin is connected with tube chip in the correspondence in semiconductor chip group 1 with the public pole of lower tube chip, exchange confluence busbar 33
Top confluence end is connected with layer busbar is exchanged.
In the present embodiment, as shown in figure 3, Fig. 3 is in half-bridge power semiconductor module provided by present embodiment
The main circuit diagram of multi-chip power interconnection, wherein C1 indicates that the collector of upper tube chip 101 in the module, E2 indicate lower tube core
The emitter of piece 102, E1/C2 indicate the public pole of upper tube chip 101 and lower tube chip 102 in the same semiconductor chip.
Preferably, respectively the positive confluence busbar in confluence busbar group, negative confluence busbar are parallel to each other with confluence busbar is exchanged, and
Insulation division is equipped between two adjacent confluence busbars.Each pin of the bottom end for busbar group of converging is two layers of bending pin.Low sense
Composite bus bar is equipped with the interface holes of preset number, and each confluence end at the top for busbar group of converging is equipped with and corresponding interface holes are matched
Close the confluence end protrusion of grafting.Predeterminated position between the just two neighboring pin of confluence busbar is provided with an extending direction
Away from the confluence end of each pin protrusion.Predeterminated position between the two neighboring pin of negative confluence busbar is provided with an extension
Direction is away from the confluence end of each pin protrusion.Predeterminated position between the two neighboring pin of exchange confluence busbar is provided with one
A extending direction is away from the confluence end of each pin protrusion.
In the present embodiment, confluence busbar group has several groups, is respectively positioned on the lower section of low sense composite bus bar, and each group confluence is female
It is parallel relationship between row's group, to realize that the power circuit between low sense composite bus bar and semiconductor chip group is conductively connected function
Energy.Include positive confluence busbar inside single busbar group of converging, bear confluence busbar and exchange confluence busbar, is respectively completed chip in group
Conductive connection and combining functions.Arrangement, intermediate space filling are abutted in parallel with above-mentioned three kinds of confluences busbar on group chip
Insulating materials insulation constitutes above-mentioned insulation division.
As shown in figure 4, just confluence busbar 31, bottom end pin 31a are used to be connected to the collector C1 of each upper tube chip, top
Portion confluence end 31b (i.e. confluence end protrusion) is connect with the positive layer busbar 22 inside the interface holes of low sense composite bus bar 2；Positive confluence is female
The bottom end pin 31a of row 31, is designed to two layers of bending form, is conducive to discharging for busbar internal stress；The number of bottom end pin 31a
Amount, it is identical as with the quantity of semiconductor chip in group, it is 3 in the present embodiment, but be not limited to the present embodiment, it can also basis
Actual conditions are other quantities, and top confluence end 31b is the form of upward straight cutting, the dead band among the pin 31a of every two bottom end
Design a top confluence end 31b.Since the position of chip layout is different, the chip of close central area, internal temperature phase
To higher, the electric current which passes through is accordingly smaller, and the electric current that corresponding bottom end pin 31a passes through is smaller, top confluence
Hold the position of 31b accordingly far from above-mentioned bottom end pin 31a, Position Design neutral point deviation temperature between two bottom end pin 31a
Low chip-side.And the position at top confluence end is arranged according to corresponding position of semiconductor chip, design is reasonable equal
Flow position.
Correspondingly, confluence busbar 32 is born, bottom end pin 32a is connected to the emitter E 2 of each lower tube chip, top confluence
End 32b is connect with the negative layer busbar 21 inside the interface holes of low sense composite bus bar 2；The bottom end pin 32a of negative confluence busbar 32, if
Two layers of bending form is counted into, discharging for busbar internal stress is conducive to；Semiconductor core in the quantity of bottom end pin 32a, with same group
The quantity of piece is identical, is 3 in the present embodiment, but be not limited to the present embodiment, is also possible to other quantity.Top confluence end
32b is the form of upward straight cutting, and the dead band among the pin 32a of every two bottom end designs a top confluence end 32b；Due to chip
The position of layout is different, and the chip close to central area, internal temperature is relatively high, and the electric current which passes through is corresponding
Smaller, the electric current that corresponding bottom end pin 32a passes through is smaller, and the position of top confluence end 32b is accordingly far from above-mentioned bottom end pin
32a, Position Design low chip-side of neutral point deviation temperature between two bottom end pin 32a.And the position at top confluence end
It is arranged according to corresponding position of semiconductor chip, design is reasonable to flow position.
Correspondingly, exchange confluence busbar 33, bottom end pin 33a is connected to the public pole of each tube chip up and down of semiconductor
E1/C2, top confluence end 33b are connect with the exchange layer busbar 23 inside the interface holes of low sense composite bus bar 2；Exchange confluence busbar
33 bottom end pin 33a, is designed to two layers of bending form, is conducive to discharging for busbar internal stress.The number of bottom end pin 33a
Amount, it is identical as with the quantity of semiconductor chip in group, it is 3 in the present embodiment, but be not limited to the present embodiment, is also possible to it
His quantity；Top confluence end 33b is the form of upward straight cutting, and the dead band among the pin 33a of every two bottom end designs a top
Converge end 33b；Since the position of chip layout is different, the chip of close central area, internal temperature is relatively high, the chip
The electric current that inside passes through is accordingly smaller, and the electric current that corresponding bottom end pin 33a passes through is smaller, the position phase of top confluence end 33b
It should be far from above-mentioned bottom end pin 33a, Position Design low chip-side of neutral point deviation temperature between two bottom end pin 5a.And
The position at top confluence end is arranged according to corresponding position of semiconductor chip, and design is reasonable to flow position.
Wherein, the low sense composite bus bar of top layer is positive and negative and ac conduction copper sheet forms by 3 layers be substantially parallel, between layer
Spacing is very small, and the electromagnetism field energy that electric current flowing generates in every layer is cancelled out each other, to reduce the stray inductance in circuit；Together
It manages, 3 kinds of confluence busbars in busbar group of converging are also parallel and are close to arrangement, can reduce the stray inductance of circuit.
By the way that 31b at the top of confluence busbar, 32b, the adjustment of 33b raised position can make busbar connector bottom legs different
The electric current of size can flow through the circuit paths of different length, and high current path is short, low current path length, so that adjustment converges
The current density and calorific value of busbar reach stream effect；31b simultaneously, 32b, the multiple quantity of 33b convex design, rather than
Single upward confluence is dispersed and is improved the ability by electric current, also embodies current sharing.
It should be noted that can be welded by pin between low sense composite bus bar and each confluence busbar group, riveting, grafting or
Bolted form is realized, can also be integrally machined, specifically be depended on the circumstances.
In conclusion half-bridge power semiconductor module provided by the present invention, has been divided into three layers for power module, from down toward
Upper is respectively semiconductor chip group, confluence busbar group and low sense composite bus bar, wherein semiconductor chip group is the master of power module
Funtion part, main circuit external interface of the exchange interface and positive and negative layer interface of low sense composite bus bar as power module, confluence
Busbar group realizes the conductive connection of low sense composite bus bar and semiconductor chip group, constitutes entire conductive input and output circuit, should
The current sharing between confluence busbar group and each chip of semiconductor chip group has been taken into account in circuit, and circuit is overlapped as far as possible, parasitic electricity
Sense greatly reduces, and improves the low perception and current sharing of power module.
A kind of half-bridge power semiconductor module provided by the present invention is described in detail above.Tool used herein
Principle and implementation of the present invention are described for body example, the above embodiments are only used to help understand this hair
Bright and its core concept.It should be pointed out that for those skilled in the art, not departing from the principle of the invention
Under the premise of, it can be with several improvements and modifications are made to the present invention, these improvement and modification also fall into the claims in the present invention
In protection scope.
Claims (9)
1. a kind of half-bridge power semiconductor module characterized by comprising
Positioned at the semiconductor chip group of bottom；
Positioned at the low sense composite bus bar of top layer, the two sides of the low sense composite bus bar, which each extend over, is provided with exchange interface and positive and negative
Layer interface, the low sense composite bus bar include the negative layer busbar of lamination setting, positive layer busbar and exchange layer busbar；
Several confluence busbar groups parallel with one another positioned at middle layer, wherein the bottom end of each confluence busbar group and described partly lead
Corresponding semiconductor chip connection in body chipset, the top confluence end of each confluence busbar group and the low sense composite bus bar
Correspondence busbar connection.
2. module according to claim 1, which is characterized in that each confluence busbar group includes:
Just converge busbar, the collection of tube chip in the correspondence in the bottom end pin and the semiconductor chip group of the positive confluence busbar
The top confluence end of electrode connection, the positive confluence busbar is connected with the positive layer busbar；
Confluence busbar is born, the hair of tube chip under the correspondence in the bottom end pin and the semiconductor chip group of the negative confluence busbar
The top confluence end of emitter-base bandgap grading connection, the negative confluence busbar is connected with the negative layer busbar；
Exchange confluence busbar, tube chip in the correspondence in the bottom end pin and the semiconductor chip group of the exchange confluence busbar
It is connected with the public pole of lower tube chip, the top confluence end of the exchange confluence busbar exchanges the connection of layer busbar with described；Wherein,
The emitter of the public extremely described upper tube chip or the collector of the lower tube chip.
3. module according to claim 2, which is characterized in that positive confluence busbar, negative remittance in each confluence busbar group
Stream busbar is parallel to each other with confluence busbar is exchanged, and insulation division is equipped between two adjacent confluence busbars.
4. module according to claim 3, which is characterized in that each pin of the bottom end of the confluence busbar group is two layers of folding
Bend pipe foot.
5. module according to claim 4, which is characterized in that the low sense composite bus bar is equipped with the interface of preset number
Each confluence end in hole, the top of the confluence busbar group is equipped with and the confluence end protrusion of corresponding interface holes cooperation grafting.
6. module according to claim 5, which is characterized in that between the two neighboring pin of the positive confluence busbar
Predeterminated position is provided with an extending direction away from the confluence end of each pin protrusion.
7. module according to claim 6, which is characterized in that between the two neighboring pin of the negative confluence busbar
Predeterminated position is provided with an extending direction away from the confluence end of each pin protrusion.
8. module according to claim 7, which is characterized in that between the two neighboring pin of the exchange confluence busbar
Predeterminated position be provided with an extending direction away from each pin the confluence end protrusion.
9. module according to any one of claims 1 to 8, which is characterized in that the low sense composite bus bar is equipped with several
Through-hole for the encapsulating insulating layer between the negative layer busbar, positive layer busbar and exchange layer busbar.
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| CN201710321481.XA CN106971992B (en) | 2017-05-09 | 2017-05-09 | A kind of half-bridge power semiconductor module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US11444036B2 (en) | 2018-07-18 | 2022-09-13 | Delta Electronics (Shanghai) Co., Ltd. | Power module assembly |
| JP6682027B1 (en) * | 2019-04-22 | 2020-04-15 | 三菱電機株式会社 | Busbar module |
| CN112750803B (en) * | 2019-10-31 | 2023-05-16 | 株洲中车时代电气股份有限公司 | Busbar terminal and IGBT power module |
| CN112687644B (en) * | 2020-12-16 | 2024-04-19 | 株洲中车时代半导体有限公司 | Integrated radiator IGBT power device with low-inductance composite busbar structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103138600A (en) * | 2011-11-30 | 2013-06-05 | 永济新时速电机电器有限责任公司 | Compound bus bar |
| CN104578708B (en) * | 2013-10-25 | 2018-03-16 | 国家电网公司 | A kind of composite bus bar in parallel suitable for IGBT |
| CN204464687U (en) * | 2015-04-08 | 2015-07-08 | 南车株洲电力机车研究所有限公司 | A kind of stack bus bar |
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