CN106961253A - High linearity radio-frequency power amplifier - Google Patents
High linearity radio-frequency power amplifier Download PDFInfo
- Publication number
- CN106961253A CN106961253A CN201610011777.7A CN201610011777A CN106961253A CN 106961253 A CN106961253 A CN 106961253A CN 201610011777 A CN201610011777 A CN 201610011777A CN 106961253 A CN106961253 A CN 106961253A
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- Prior art keywords
- radio
- power amplifier
- high linearity
- semiconductor power
- frequency power
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- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000003990 capacitor Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 238000004891 communication Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of high linearity radio-frequency power amplifier, including：First semiconductor power transistor, its second end is by inputting network connection high linearity radio-frequency power amplifier first port and logical input biasing circuit the first bias voltage of connection, its the 3rd end is by exporting network connection to high linearity radio-frequency power amplifier second port, and be connected by inductance with outer power voltage, this external power source passes through the first capacity earth, its first end ground connection；Second semiconductor power transistor, its second end is connected after connecting the second bias voltage, its first end and the 3rd terminal shortcircuit by the 3rd the second end of the first semiconductor power transistor of capacitance connection and by resistance with the first end of the first semiconductor power transistor.The present invention is keeping maximum power output while can have high linearity more in the case where not increasing current drain compared with existing radio-frequency power amplifier.
Description
Technical field
The present invention relates to integrated circuit fields, more particularly to a kind of high linearity radio-frequency power amplifier.
Background technology
As the deep development communication system of modern communication technology needs the higher and higher linearity higher and higher to meet
Transmission rate.
RF front-end module, which mainly achieves a butt joint, receives low noise amplification and the power amplification of transmitting radiofrequency signal of radiofrequency signal
It is indispensable part in radio frequency communication devices etc. function.Wherein, power amplifier is main generation radio frequency work(
The temperature and energy consumption of the original paper of rate and the transmission range for directly determining radiofrequency signal, transmission quality, and whole system.
In current wireless telecommunication system, radio-frequency power amplifier generally takes on several forms：(1) using discrete
RF power device, is realized by the way of hybrid circuit, and it has the disadvantage that volume is big, high cost, and control circuit is answered
It is miscellaneous.(2) GaAs (GaAs) HBT (HBT) power amplifier is used, HBT transistors have body
The small, linearity of product is good, the features such as high voltage withstanding, still, is not easy to and other radio circuits do single-chip integration.(3)
Using the power amplifier of MOS device, there is price advantage, suitable for doing integrated on piece with other parts telecommunication circuit, shortcoming
Be it is high voltage withstanding and be difficult export it is high-power under the conditions of keep high linearity.With continuing to develop for modern communication technology
Increasingly harsh to QoS requirement with people, the linearity of traditional metal-oxide-semiconductor power amplifier has been difficult to meet need
Ask.
The content of the invention
The technical problem to be solved in the present invention is to provide one kind in the case where not increasing current drain, with existing radio-frequency power
Amplifier, which compares, is keeping maximum power output while having the radio-frequency power amplifier of more high linearity.
To solve a kind of high linearity radio-frequency power amplifier that the above-mentioned technical problem present invention is provided, including：
First, second semiconductor power transistor M1, M2, first, second electric capacity C1, C2, inductance L1 are realized defeated
Enter the input network IN of impedance matching, and realize the output network OUT of output impedance matching；
It is any technique commonly known to input network IN and output network OUT, and those skilled in the art can want according to physical circuit
Ask and realize input network IN and output network OUT (input network IN and output network OUT knots by numerous embodiments
Structure can be the same or different).For example, inductance of the one end by a capacity earth.
Amplified by inputting network IN connection high linearities radio-frequency power at first semiconductor power transistor M1, its second end
Device first port P1 and logical input biasing circuit B connection the first bias voltage V1, its 3rd end is by exporting network OUT
High linearity radio-frequency power amplifier second port P2 is connected to, and is connected by inductance L1 with outer power voltage VDD,
This outside power vd D is grounded by the first electric capacity C1, its first end ground connection；
Second semiconductor power transistor M2, its second end passes through the 3rd electric capacity C3 the first semiconductor power transistors of connection
Ends of M1 second and by resistance R1 connection the second bias voltage V2, with the first semiconductor after its first end and the 3rd terminal shortcircuit
Power transistor M1 first end is connected.
Wherein, the first bias voltage V1 is forward voltage, and the second bias voltage V2 is backward voltage, its voltage value of V2
For just.
Wherein, input biasing circuit B is inductance, resistance or parallel inductor capacitor resonator.
Wherein, first, second semiconductor power transistor M1, M2 is:NMOS (N-type Metal-oxide-semicondutor),
PMOS (p-type Metal-oxide-semicondutor), HEMT (HEMT) or LDMOS (horizontal proliferation gold
Belong to oxide semiconductor).Also, first, second semiconductor power transistor M1, M2 anti-espionage transistors each other, when
When first semiconductor power transistor M1 is NMOS, then the second semiconductor power transistor M2 is PMOS.
Inventive structure operation principle：First, second semiconductor power transistor M1, M2 equivalent circuit is as shown in Figure 2.
Wherein, the first semiconductor power transistor M1 has non-linear voltage-controlled current source Ids=f (Vgs), and its electric current is by grid source
Voltage Vgs control, gate-drain parasitic capacitances Cgd, and gate-source parasitic capacitance Cgs1.Parasitic capacitance Cgs1 capacitance
It is the nonlinear function Cgs1=f1 (Vgs) changed with gate source voltage VGS.Parasitic capacitance Cgs1 is comprising stronger non-linear
Composition, this is also that traditional common source MOSFET power amplifier circuits produce a nonlinear important root.
In the present invention, the second semiconductor power transistor M2 can also be equivalent to a variable capacitance Cgs2, its capacitance
It is the nonlinear function Cgs2=f2 (Vgs) changed with gate source voltage Vgs.Due to the characteristic phase of two transistors of M1, M2
Instead, the property of the two functions is opposite, therefore in the range of certain Vgs, under the conditions of certain direct current biasing,
And under conditions of certain two capacitance ratios (being determined by the size of two kinds of transistors), total capacitance can be caused
Cgs1+Cgs2 is approximately equal to a constant not changed with Vgs, therefore can largely improve MOS transistor power
The linearity of amplifier.Wherein, electric capacity C3 is much larger than Cgs2 and can be considered ac short circuit.
Brief description of the drawings
The present invention is further detailed explanation with embodiment below in conjunction with the accompanying drawings：
Fig. 1 is the first high linearity radio-frequency power amplifier structural representation of the invention.
During Fig. 2 is radio-frequency power amplifier described in Fig. 1, first, second semiconductor power transistor M1, M2's is equivalent
Circuit diagram.
Embodiment
As shown in figure 1, first, second semiconductor power transistor M1, M2, first, second electric capacity C1, C2, electricity
Feel L1, realize the input network IN of input resistant matching, and realize the output network OUT of output impedance matching；S is
Source electrode, D is drain electrode, and G is grid.
It is any technique commonly known to input network IN and output network OUT, and those skilled in the art can want according to physical circuit
Ask and realize input network IN and output network OUT (input network IN and output network OUT knots by numerous embodiments
Structure can be the same or different).For example, inductance of the one end by a capacity earth.
First semiconductor power transistor M1 (the present embodiment is NMOS), its second end (grid) is by inputting network IN
High linearity radio-frequency power amplifier first port P1 and logical input biasing circuit B connection the first bias voltage V1 are connected,
Its 3rd end (drain electrode) is connected to high linearity radio-frequency power amplifier second port P2 by exporting network OUT, and leads to
Cross inductance L1 to be connected with outer power voltage VDD, this outside power vd D is grounded by the first electric capacity C1, its first end
(source electrode) is grounded；
Second semiconductor power transistor M2 (the present embodiment is PMOS), its second end (grid) passes through the 3rd electric capacity C3
Connect first the second ends of semiconductor power transistor M1 (grid) and by resistance R1 connection the second bias voltage V2, its
First end (source electrode) after first end (source electrode) and the short circuit of the 3rd end (drain electrode) with the first semiconductor power transistor M1
It is connected.
Wherein, the first bias voltage V1 is forward voltage, and the second bias voltage V2 is backward voltage, its voltage value of V2
For just.
Wherein, input biasing circuit B is inductance, resistance or parallel inductor capacitor resonator.
Wherein, first, second semiconductor power transistor M1, M2 can be used:NMOS (N-type metal-oxides-partly lead
Body), PMOS (p-type Metal-oxide-semicondutor), HEMT (HEMT) or LDMOS (laterally
Diffused metal oxide emiconductor).Also, first, second semiconductor power transistor M1, M2 anti-espionage crystal each other
Pipe, when the first semiconductor power transistor M1 is NMOS, then the second semiconductor power transistor M2 is PMOS.
The present invention is described in detail above by embodiment and embodiment, but these are not constituted to this
The limitation of invention.Without departing from the principles of the present invention, those skilled in the art can also make many deformations and change
Enter, these also should be regarded as protection scope of the present invention.
Claims (4)
1. a kind of high linearity radio-frequency power amplifier, it is characterised in that including：
First, second semiconductor power transistor (M1, M2), first, second electric capacity (C1, C2), inductance (L1),
The input network (IN) of input resistant matching is realized, and realizes the output network (OUT) of output impedance matching；
First semiconductor power transistor (M1), its second end connects high linearity radio frequency work(by inputting network (IN)
Rate amplifier first port (P1) and logical input biasing circuit (B) the first bias voltage of connection (V1), its 3rd end leads to
Cross output network (OUT) and be connected to high linearity radio-frequency power amplifier second port (P2), and pass through inductance (L1)
It is connected with outer power voltage (VDD), this external power source (VDD) is grounded by the first electric capacity (C1), its first end
Ground connection；
Second semiconductor power transistor (M2), its second end connects the first semiconductor power by the 3rd electric capacity (C3)
The end of transistor (M1) second simultaneously connects the second bias voltage (V2) by resistance (R1), and its first end and the 3rd end are short
The first end of the semiconductor power transistors of Lu Houyu first (M1) is connected.
2. high linearity radio-frequency power amplifier as claimed in claim 1, it is characterised in that：First bias voltage (V1)
For forward voltage, the second bias voltage (V2) is backward voltage.
3. radio-frequency power amplifier as claimed in claim 1, it is characterised in that：Input biasing circuit (B) be inductance,
Resistance or parallel inductor capacitor resonator.
4. radio-frequency power amplifier as claimed in claim 1, it is characterised in that：First, second semiconductor power crystal
Managing (M1, M2) is:MOSFET, HEMT or LDMOS；Also, first, second semiconductor power transistor (M1,
M2) anti-espionage transistor each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610011777.7A CN106961253A (en) | 2016-01-08 | 2016-01-08 | High linearity radio-frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610011777.7A CN106961253A (en) | 2016-01-08 | 2016-01-08 | High linearity radio-frequency power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106961253A true CN106961253A (en) | 2017-07-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610011777.7A Withdrawn CN106961253A (en) | 2016-01-08 | 2016-01-08 | High linearity radio-frequency power amplifier |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101999207A (en) * | 2008-03-31 | 2011-03-30 | 贾弗林半导体公司 | Compensating for non-linear capacitance effects in a power amplifier |
| CN104158526A (en) * | 2014-08-15 | 2014-11-19 | 中国电子科技集团公司第二十四研究所 | Method of improving linearity of MOS (Metal Oxide Semiconductor) transistor analog switch and MOS transistor analog switch circuit |
| CN104362988A (en) * | 2014-08-27 | 2015-02-18 | 北京中电华大电子设计有限责任公司 | Circuit for linearization of power amplifier |
| US20150244358A1 (en) * | 2012-07-07 | 2015-08-27 | Skyworks Solutions, Inc. | Semiconductor devices and methods providing non-linear compensation of field-effect transistors |
-
2016
- 2016-01-08 CN CN201610011777.7A patent/CN106961253A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101999207A (en) * | 2008-03-31 | 2011-03-30 | 贾弗林半导体公司 | Compensating for non-linear capacitance effects in a power amplifier |
| US20150244358A1 (en) * | 2012-07-07 | 2015-08-27 | Skyworks Solutions, Inc. | Semiconductor devices and methods providing non-linear compensation of field-effect transistors |
| CN104158526A (en) * | 2014-08-15 | 2014-11-19 | 中国电子科技集团公司第二十四研究所 | Method of improving linearity of MOS (Metal Oxide Semiconductor) transistor analog switch and MOS transistor analog switch circuit |
| CN104362988A (en) * | 2014-08-27 | 2015-02-18 | 北京中电华大电子设计有限责任公司 | Circuit for linearization of power amplifier |
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| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20170718 |
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| WW01 | Invention patent application withdrawn after publication |