CN106960832A - Hexagonal boron nitride radiator structure - Google Patents
Hexagonal boron nitride radiator structure Download PDFInfo
- Publication number
- CN106960832A CN106960832A CN201610012589.6A CN201610012589A CN106960832A CN 106960832 A CN106960832 A CN 106960832A CN 201610012589 A CN201610012589 A CN 201610012589A CN 106960832 A CN106960832 A CN 106960832A
- Authority
- CN
- China
- Prior art keywords
- boron nitride
- heat
- hexagonal boron
- electronics
- radiator structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
Abstract
A kind of hexagonal boron nitride radiator structure includes：Multiple electronic components, multiple heat-conducting buffer layers, and an electronics heat conduction and heat radiation component.Each electronic component is to be designed to produce heat, and each heat-conducting buffer layer is made up of hexagonal boron nitride (h-BN), and it has the thermal conductivity scope of 10 to 40 watts/meters of degree.This this structure can overcome the problem of electronic installation is short-circuit completely.The cooling space of modern electronics is limited, and can be modified with this simple structure, makes full use of the advantage of hexagonal boron nitride (h-BN) and other heat sink materials.
Description
Technical field
The present invention relates to a kind of hexagonal boron nitride (h-BN) radiator structure, it can overcome electronic installation completely
Short circuit problem.
Background technology
Heat-conducting interface material tool lower thermal conductivity now, therefore do not have very much to the heat spreader produced by electronics
Efficiency.
In general, fin is by as heat sink material, but it can increase the cost of device.
Electronic installation develop in recent years it is very quick, with smaller, processing speed faster, more
Lightly, and high-performance.But with this development, the heat dissipation problem of electronic installation gradually emerges in large numbers, tight as one
Respectful subject under discussion, the smaller szie of device is higher than because generating the density of heat.In addition, their accommodating radiators
Space it is less.Well known, electronic installation can generally be damaged at high temperature.Therefore, in the urgent need to one
Plant the high efficient heat dissipation performance suitable for electronic installation.
For electronic installation heat sink material must with electric insulation, to prevent short circuit phenomenon.Hexagonal boron nitride
(hexagonal boron nitride, h-BN) has been widely used in this purposes.
Hexagonal boron nitride (h-BN) has the two-dimentional Rotating fields similar to graphite.Hexagonal boron nitride (h-BN) has
Have along basal plane very high thermal conductivity (400 watt/meter degree), and the electronics of hexagonal boron nitride (h-BN) is exhausted
Edge makes it different from graphene.Hexagonal boron nitride (h-BN) has excellent heat, chemical stability, and electricity
Insulating sublayer, is a kind of material for being radiated for electronic installation and expanding heat.
The open hexagonal boron nitride (h-BN) of U.S. Patent number 6054520 is used as the filler for manufacturing a fin.Its
As a result show that silicone rubber compound has 0.18 DEG C/W low thermal resistance.
U.S. Patent Publication No. 20070259211 also discloses the radiator of one hexagonal boron nitride of manufacture (h-BN).
The adhesive of quantity is reduced in the extraction process, causes the radiator that there is the thermal conductivity of 48 watt/meter degree.
Except radiator, hexagonal boron nitride (h-BN) is used also as radiating paste, China Patent No.
104220533 open manufacture hexagonal boron nitrides (h-BN), aluminum oxide, and Resin paste.Aluminum oxide increase is applied
The intensity of layer, and the Resin paste has the thermal conductivity of 10 watt/meter degree in vertical direction.
Hexagonal boron nitride (h-BN) paste of another patented invention and its application, such as printed circuit board (PCB)
(PCB).China Patent No. 103087471A discloses eight percentage by weights (8wt%) boron nitride filler,
It seem the printed circuit board (PCB) for having 3.43 watt/meter degree thermal conductivities.
The thermal conductivity that U.S. Patent Publication No. 2014/0020933A1 discloses printed circuit board (PCB) is presented on drastically
Rise, when the compound is more than 45 percentage by weights (45wt%) boron nitride, and in tellite
Reach 70 percentage by weights (70wt%) boron nitride, the maximum of 15 watt/meter degree.
Although hexagonal boron nitride (h-BN) can increase the thermal conductivity in a substrate or intermediate layer, add due to other
Plus agent, for example, adhesive and metal oxide, thus hexagonal boron nitride (h-BN) heat-sinking capability still not
Enough height.
In general, another thermal component, for example, thermosphere is attached to heat conduction layer.Such as,
The sheet metal that China Patent No. 203424617 is disclosed in it is anchored to radiator, to improve radiating knot
Structure.
However, the thermosphere being made of metal is not only heavy, and can also add cost, and it is doubtful this
Plant the whether beneficial radiating of structure.
In fact, the thermal source in many electronic installations is by electronic heating component or its circuit unit etc., example
Such as, light emitting diode (LED) filament or light-emitting diode lamp-plate, semiconductor chip or device, radio frequency Gao Gong
Rate printed circuit board (PCB) etc. is produced.
Heat sink material direct contact heat source is allowed to be also radiating most efficient method.
But, metal or heat conduction and heat radiation coating can not be contacted directly with such thermal source, because electronic conductor
The short circuit problem of circuit unit or component.
The content of the invention
It is an object of the invention to provide a kind of hexagonal boron nitride radiator structure, it can overcome electronics to fill completely
The short circuit problem put.
To overcome above mentioned problem, a kind of hexagonal boron nitride (h-BN) radiator structure of the invention includes：It is multiple
Electronic component, multiple heat-conducting buffer layers, and an electronics heat conduction and heat radiation component.
Each electronic component is fixed on each heat-conducting buffer layer.
Each heat-conducting buffer layer is made up of hexagonal boron nitride (h-BN), hexagonal boron nitride (h-BN) tool
There is the thermal conductivity scope of 10 to 40 watts/meters of degree, and each layer of gross thickness is at least above 0.01 millimeter,
With powerful strength, so as to fixed electronic device.
The electronics heat conduction and heat radiation component is made by metal level or with a radiating coating method.
It is still further preferred that, each electronic component is fixed to described by heat-conducting glue or direct forming mode
On heat-conducting buffer layer.
It is still further preferred that, when being made up when electronics heat conduction and heat radiation component with the coating method that radiates of coating material, institute
Stating coating material includes carbon material, metallic, far infrared oxide, and appointing in alpha-silicon nitride powders
What is a kind of.
It is still further preferred that, it is described when being made up when electronics heat conduction and heat radiation component with the coating method that radiates of carbon material
Carbon material includes any the one of graphene, carbon black, graphite, CNT, activated carbon, and native graphite
Kind.
It is still further preferred that, when being made up when electronics heat conduction and heat radiation component with the coating method that radiates of metallic particles, institute
Stating metallic particles includes copper, and nickel, zinc, iron, cobalt, silver, gold, platinum, and their alloy are any.
It is still further preferred that, when being made up when electronics heat conduction and heat radiation component with the coating method that radiates of far infrared powder,
The far infrared powder includes silica, aluminum oxide, titanium oxide, zirconium oxide, zirconium carbide, carbonization
Silicon, ramet, titanium diboride, zirconium diboride, titanium disilicide, silicon nitride, titanium nitride, and boron nitride
Any one.
Brief description of the drawings
Fig. 1 is hexagonal boron nitride (h-BN) radiator structure schematic diagram of a preferred embodiment of the present invention；
Fig. 2 is the assembling schematic diagram of hexagonal boron nitride (h-BN) radiator structure of a preferred embodiment of the present invention；
Fig. 3 is the heat transfer of hexagonal boron nitride (h-BN) film of the various thickness of a preferred embodiment of the present invention
Rate schematic diagram.
Embodiment
Referring initially to Fig. 1 to Fig. 3, hexagonal boron nitride (h-BN) the radiating knot of a preferred embodiment of the present invention
Structure includes：Multiple electronic component A, multiple heat-conducting buffer layer B, and an electronics heat conduction and heat radiation component C.
Each electronic component A is provided as a thermal source, for example, light emitting diode (LED) filament, luminous two
Pole pipe (LED) lamp plate, semiconductor chip, semiconductor device, radio frequency high-power printed circuit board (PCB), high power
Battery, and other devices, to produce heat.
Each heat-conducting buffer layer B is made up of hexagonal boron nitride (h-BN), and the hexagonal boron nitride (h-BN) has
The thermal conductivity scope of 10 to 40 watts/meters of degree, and each layer of gross thickness is at least above 0.01 millimeter,
With powerful strength, so as to fixed electronic device.Each heat-conducting buffer layer is with hardness or flexible
Property.
Each electronic component A is fixed to the heat-conducting buffer by heat-conducting glue or direct forming mode
On layer.
The electronics heat conduction and heat radiation component C is made by metal level or with a radiating coating method.
When the electronics heat conduction and heat radiation component C is made up with the coating method that radiates of coating material, the painting
Cloth material includes carbon material, metallic, far infrared oxide, and any one in alpha-silicon nitride powders
Kind.
When the electronics heat conduction and heat radiation component C is made up with the coating method that radiates of carbon material, the carbon materials
Material includes any one of graphene, carbon black, graphite, CNT, activated carbon, and native graphite.
When the electronics heat conduction and heat radiation component is made up with the coating method that radiates of metallic particles, the metal
Particle includes copper, and nickel, zinc, iron, cobalt, silver, gold, platinum, and their alloy are any.
It is described when being made up when the electronics heat conduction and heat radiation component with the coating method that radiates of far infrared powder
Far infrared powder include silica, aluminum oxide, titanium oxide, zirconium oxide, zirconium carbide, carborundum,
Times of ramet, titanium diboride, zirconium diboride, titanium disilicide, silicon nitride, titanium nitride, and boron nitride
What is a kind of.
Claims (6)
1. a kind of hexagonal boron nitride radiator structure, it is characterised in that including：Multiple electronic components, it is multiple
Heat-conducting buffer layer, and an electronics heat conduction and heat radiation component；
Wherein, each electronic component is integrally fixed on each heat-conducting buffer layer；
Wherein, each heat-conducting buffer layer is made up of hexagonal boron nitride (h-BN), the hexagonal boron nitride
(h-BN) there is the thermal conductivity scope of 10 to 40 watts/meters of degree, and each layer of gross thickness at least above
0.01 millimeter, with powerful strength, so as to fixed electronic device；And
Wherein, the electronics heat conduction and heat radiation component is made by metal level or with a radiating coating method.
2. hexagonal boron nitride radiator structure as claimed in claim 1, it is characterised in that each electronics
Component is fixed on the heat-conducting buffer layer by heat-conducting glue or direct forming mode.
3. hexagonal boron nitride radiator structure as claimed in claim 1, it is characterised in that when electronics heat conduction dissipates
When hot component is made up with the coating method that radiates of coating material, the coating material includes carbon material, metal
Any one of particle, far infrared oxide, and alpha-silicon nitride powders.
4. hexagonal boron nitride radiator structure as claimed in claim 1, it is characterised in that when electronics heat conduction dissipates
When hot component is made up with the coating method that radiates of carbon material, the carbon material includes graphene, carbon black, stone
Any one of ink, CNT, activated carbon, and native graphite.
5. hexagonal boron nitride radiator structure as claimed in claim 1, it is characterised in that the metallic particles
Including copper, nickel, zinc, iron, cobalt, silver, gold, platinum, and their alloy are any.
6. hexagonal boron nitride radiator structure as claimed in claim 1, it is characterised in that when electronics heat conduction dissipates
When hot component is made up with the coating method that radiates of far infrared powder, the far infrared powder includes dioxy
SiClx, aluminum oxide, titanium oxide, zirconium oxide, zirconium carbide, carborundum, ramet, titanium diboride, two
Zirconium boride, titanium disilicide, silicon nitride, titanium nitride, and boron nitride any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610012589.6A CN106960832A (en) | 2016-01-08 | 2016-01-08 | Hexagonal boron nitride radiator structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610012589.6A CN106960832A (en) | 2016-01-08 | 2016-01-08 | Hexagonal boron nitride radiator structure |
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| CN106960832A true CN106960832A (en) | 2017-07-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610012589.6A Pending CN106960832A (en) | 2016-01-08 | 2016-01-08 | Hexagonal boron nitride radiator structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461484A (en) * | 2018-04-09 | 2018-08-28 | 黄山学院 | A kind of encapsulating structure and processing technology of high reliability IGBT module |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070259211A1 (en) * | 2006-05-06 | 2007-11-08 | Ning Wang | Heat spread sheet with anisotropic thermal conductivity |
| CN101483988A (en) * | 2008-01-11 | 2009-07-15 | 久正光电股份有限公司 | Heat radiation substrate |
| CN104220533A (en) * | 2012-03-30 | 2014-12-17 | 昭和电工株式会社 | Curable heat radiation composition |
| CN105016707A (en) * | 2014-05-02 | 2015-11-04 | 加川清二 | Heat-dissipating sheet having high thermal conductivity and its production method |
| CN105038374A (en) * | 2015-09-02 | 2015-11-11 | 普罗旺斯科技（深圳）有限公司 | Cooling coating, cooling fin and manufacturing method |
-
2016
- 2016-01-08 CN CN201610012589.6A patent/CN106960832A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070259211A1 (en) * | 2006-05-06 | 2007-11-08 | Ning Wang | Heat spread sheet with anisotropic thermal conductivity |
| CN101483988A (en) * | 2008-01-11 | 2009-07-15 | 久正光电股份有限公司 | Heat radiation substrate |
| CN104220533A (en) * | 2012-03-30 | 2014-12-17 | 昭和电工株式会社 | Curable heat radiation composition |
| CN105016707A (en) * | 2014-05-02 | 2015-11-04 | 加川清二 | Heat-dissipating sheet having high thermal conductivity and its production method |
| CN105038374A (en) * | 2015-09-02 | 2015-11-11 | 普罗旺斯科技（深圳）有限公司 | Cooling coating, cooling fin and manufacturing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461484A (en) * | 2018-04-09 | 2018-08-28 | 黄山学院 | A kind of encapsulating structure and processing technology of high reliability IGBT module |
| CN108461484B (en) * | 2018-04-09 | 2023-09-15 | 黄山学院 | Packaging structure and processing technology of IGBT module |
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