CN106952976A - A kind of ultraviolet light detector and preparation method thereof - Google Patents
A kind of ultraviolet light detector and preparation method thereof Download PDFInfo
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- CN106952976A CN106952976A CN201610003446.9A CN201610003446A CN106952976A CN 106952976 A CN106952976 A CN 106952976A CN 201610003446 A CN201610003446 A CN 201610003446A CN 106952976 A CN106952976 A CN 106952976A
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- ultraviolet light
- light detector
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- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 7
- 230000007704 transition Effects 0.000 claims abstract description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 22
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000003153 chemical reaction reagent Substances 0.000 claims description 2
- 238000007872 degassing Methods 0.000 claims description 2
- 238000005238 degreasing Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000000197 pyrolysis Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011840 criminal investigation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a kind of ultraviolet detector and preparation method thereof.The ultraviolet detector includes：Si3N4Substrate, is arranged in the Si3N4Al on substrate2O3Transition zone, and it is arranged in the Al2O3GaN film layer on transition zone.The ultraviolet detector of the present invention uses Si3N4Material is as substrate, and GaN film can be in Si3N4The quasi- isoepitaxial growth of low strain dynamic is realized on substrate, so as to possess higher crystalline quality, therefore is especially suitable for doing the detection material of the ultraviolet or even deep ultraviolet under various environment.Low with operating voltage, quality is high, large scale, low cost, the advantages of saturation current is small.
Description
Technical field
The present invention relates to a kind of ultraviolet light detector technology
Technical background
Ultraviolet detection technology is the technology that immediate and mid-term new development is got up, and is had in fields such as military and civilians extensive
And important application, thus as the emphasis problem researched and developed both at home and abroad.For military aspect, ultraviolet detector is ultraviolet right
The fields such as anti-and anti-countermeasure techniques, ultraviolet guidance and early warning system, ultraviolet secure communication have played important application；For civil side
Face, ultraviolet detector can be used for such as flame detecting, criminal investigation, astronomical observation, the daily production of health care, life etc. numerous
Field.
The content of the invention
The ultraviolet detector of the present invention uses Si3N4Material is as substrate, and gallium nitride film can be in Si3N4Realized on substrate
The quasi- isoepitaxial growth of low strain dynamic, so as to possess higher crystalline quality, therefore is especially suitable for doing ultraviolet under various environment
Or even deep ultraviolet detector.
A kind of ultraviolet light detector of the present invention overcomes the original substrate field of gallium nitride, in Si3N4Upper acquisition mono-crystal gallium nitride
Film, with Si3N4As the substrate of gallium nitride, it has quality high, large scale, the advantages of inexpensive.Gallium nitride energy extension exists
Si3N4On, just the device of gallium nitride base may be incorporated among silicon substrate large scale integrated circuit.However, the crystalline substance of both materials
There is larger difference in body structure, lattice constant and the coefficient of expansion, so the technical problem to be solved is also relatively difficult.
The task of the present invention is so completed
The invention provides a kind of ultraviolet detector, including：
Si3N4Substrate；
It is arranged in the Si3N4Al on substrate2O3Transition zone；
And it is arranged in the Al2O3The GaN film layer of transition zone.
In embodiments, the present invention is in Si3N4Depositing Al is used on substrate2O3The method of transition zone prepares gallium nitride GaN
Film.Gallium nitride film can be in Si3N4The quasi- isoepitaxial growth of low strain dynamic is realized on substrate, so as to possess higher crystalline
Amount, therefore it is especially suitable for doing the ultraviolet or even deep ultraviolet detector under various environment.
Embodiment
Embodiment 1
The invention provides a kind of preparation method of ultraviolet detector, including：
1. in Si3N4Depositing Al on substrate2O3Transition zone；
By Si3N4After substrate is corroded with organic solvent degreasing in hydrofluoric acid, load the low-pressure vertical chemistry of a radio frequency heating
In gaseous phase deposition system, with trimethyl aluminium and nitrous oxide as raw material, the Al precipitated by pyrolysis2O3Film.Through
Si is obtained after cleaning processing3N4Substrate and depositing Al2O3Transition zone.
2. in above-mentioned Al2O3One layer of gallium nitride GaN film layer is grown on transition zone：
The Al that will be obtained in embodiment 12O3Transition zone, is put into a horizontal low pressure metal organic chemical vapor precipitation
In reative cell, substrate is cooled to 570 ° of growing gallium nitride cushions under 1050 ° of hydrogen in advance after degassing half an hour, then, then
Temperature is increased to 1050 ° of growing gallium nitride GaN films.
3. etched in film layer obtained above with making metal electrode：
Make this layer before must first with acetone or isopropanol IPA chemical reagent to step 2 in product carry out surface
Cleaning, to obtain clean even curface；Then optical mask and the method for developing technique covering part film with photoresist are used
Layer；Then the film layer without photoresist covering part is etched away using the ICP methods etched.The sample etched again uses third
Ketone, isopropanol (IPA) and deionized water are cleaned up；Then stick mask and use electron beam evaporation plating, plated in right film layer
The negative pole of upper metal electrode, plates the negative pole of metal electrode in left film layer.
4. the 1-3 in 1 is so as to obtaining a kind of described ultraviolet light detector in conjunction with the embodiments.
Embodiment 2
The present embodiment is same as Example 1.
Claims (7)
1. a kind of ultraviolet light detector is included：Si3N4Substrate, is arranged in the Si3N4Al on substrate2O3Transition zone, and arrangement
In the Al2O3The GaN film layer of transition zone.
2. a kind of ultraviolet light detector according to claim 1, wherein, it is described in embodiments, the present invention is in Si3N4
Depositing Al is used on substrate2O3The method of transition zone prepares gallium nitride GaN film.
3. a kind of ultraviolet light detector according to claim 1, wherein, it is described in Si3N4Depositing Al on substrate2O3Transition
Layer.
4. a kind of ultraviolet light detector according to claim 1, wherein, in above-mentioned Al2O3One layer of nitridation is grown on transition zone
Gallium GaN film layer.
5. a kind of ultraviolet light detector according to claim 1, it is characterised in that：By Si3N4Substrate organic solvent degreasing
After corroding in hydrofluoric acid, in the low-pressure vertical chemical gaseous phase deposition system for loading a radio frequency heating, with trimethyl aluminium and an oxygen
Change phenodiazine as raw material, the Al precipitated by pyrolysis2O3Film.Si is obtained after cleaning processing3N4Substrate and deposition
Al2O3Transition zone.
6. a kind of ultraviolet light detector according to claim 1, it is characterised in that：By the Al obtained in 12O3Transition zone, puts
Enter into a horizontal low pressure metal organic chemical vapor precipitation reaction room, substrate degassing half an hour under 1050 ° of hydrogen in advance
Afterwards, 570 ° of growing gallium nitride cushions are then cooled to, then temperature is increased to 1050 ° of growing gallium nitride GaN films.
7. a kind of ultraviolet light detector according to claim 1, it is characterised in that：Must be first with third before the layer is made
Ketone or isopropanol IPA chemical reagent carry out surface clean to the product in step 2, to obtain clean even curface；Then use
Optical mask and the method for developing technique covering part film layer with photoresist；Then etched away not using the ICP methods etched
Film layer through photoresist covering part；The sample etched again is cleaned dry with acetone, isopropanol (IPA) and deionized water
Only；Then stick mask and use electron beam evaporation plating, the negative pole of metal electrode is plated in right film layer, plated in left film layer
The negative pole of upper metal electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610003446.9A CN106952976A (en) | 2016-01-06 | 2016-01-06 | A kind of ultraviolet light detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610003446.9A CN106952976A (en) | 2016-01-06 | 2016-01-06 | A kind of ultraviolet light detector and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN106952976A true CN106952976A (en) | 2017-07-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610003446.9A Pending CN106952976A (en) | 2016-01-06 | 2016-01-06 | A kind of ultraviolet light detector and preparation method thereof |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09227297A (en) * | 1996-02-19 | 1997-09-02 | Mitsubishi Cable Ind Ltd | Indium-gallium-nitride single crystal and its production |
| US6812053B1 (en) * | 1999-10-14 | 2004-11-02 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
| CN101478006A (en) * | 2009-01-19 | 2009-07-08 | 西安电子科技大学 | Terahertz GaN Gunn diode based on conducting type SiC substrate and manufacturing process thereof |
| EP1790017A4 (en) * | 2004-08-26 | 2009-08-05 | Lg Innotek Co Ltd | Nitride semiconductor light emitting device and fabrication method thereof |
| US20110180828A1 (en) * | 2010-01-25 | 2011-07-28 | Micron Technology, Inc. | Solid state lighting devices and associated methods of manufacturing |
| CN102456721A (en) * | 2010-10-17 | 2012-05-16 | 金木子 | Gallium nitride-based chip with ceramic substrate and manufacturing method |
| CN103603053A (en) * | 2013-11-15 | 2014-02-26 | 中电电气（南京）光伏有限公司 | Method for preparing crystalline silicon solar cells |
-
2016
- 2016-01-06 CN CN201610003446.9A patent/CN106952976A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09227297A (en) * | 1996-02-19 | 1997-09-02 | Mitsubishi Cable Ind Ltd | Indium-gallium-nitride single crystal and its production |
| US6812053B1 (en) * | 1999-10-14 | 2004-11-02 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
| EP1790017A4 (en) * | 2004-08-26 | 2009-08-05 | Lg Innotek Co Ltd | Nitride semiconductor light emitting device and fabrication method thereof |
| CN101478006A (en) * | 2009-01-19 | 2009-07-08 | 西安电子科技大学 | Terahertz GaN Gunn diode based on conducting type SiC substrate and manufacturing process thereof |
| US20110180828A1 (en) * | 2010-01-25 | 2011-07-28 | Micron Technology, Inc. | Solid state lighting devices and associated methods of manufacturing |
| CN102456721A (en) * | 2010-10-17 | 2012-05-16 | 金木子 | Gallium nitride-based chip with ceramic substrate and manufacturing method |
| CN103603053A (en) * | 2013-11-15 | 2014-02-26 | 中电电气（南京）光伏有限公司 | Method for preparing crystalline silicon solar cells |
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Application publication date: 20170714 |