CN106935468A - A kind of semiconductor processor and the multi-region temp controlling heater for semiconductor processor - Google Patents
A kind of semiconductor processor and the multi-region temp controlling heater for semiconductor processor Download PDFInfo
- Publication number
- CN106935468A CN106935468A CN201511012714.5A CN201511012714A CN106935468A CN 106935468 A CN106935468 A CN 106935468A CN 201511012714 A CN201511012714 A CN 201511012714A CN 106935468 A CN106935468 A CN 106935468A
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- heating
- zone
- lower floor
- upper strata
- temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A kind of semiconductor processor, including：One reaction cavity includes around airtight space, reaction cavity is constituted：Reaction chamber body sidewall and the pedestal in reaction cavity, pedestal top includes a heater, heater is fixedly arranged above electrostatic chuck for fixing pending substrate, it is characterized in that the heater includes lower floor's zone of heating and upper strata zone of heating, wherein lower floor's zone of heating is fixed to the pedestal by the first insulating barrier, also include the second insulation material layer between upper strata zone of heating and lower floor's zone of heating, the power of the heating power less than the heating wire of lower floor's zone of heating of its heating wire at the middle and upper levels in zone of heating.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of plasma processor multi-region temp controlling heater.
Background technology
Plasma processor is widely used in semi-conductor industry, for carrying out high-precision processing such as plasma etching, chemical vapor deposition to pending substrate（CVD）Deng.The temperature of substrate has a very big impact to the effect for processing in plasma treatment, and the different Temperature Distribution of substrate surface can cause that treatment effect is also different.In order to preferably control temperature prior art can be set between the pedestal of support substrate and electrostatic chuck one can active control heating power heater, the regulation and control that different capacity is realized to temperature are input into by heater to different zones.The plasma processor structure of prior art is as shown in figure 1, including reaction chamber 100, positioned at the pedestal 10 of reaction chamber inner bottom part, pedestal is by cable connection at least one radio-frequency power supply.Include the pipeline 11 for coolant circulation in pedestal 10 to take away the waste heat produced in plasma treatment process.The top of pedestal 10 includes heater, and heater generally includes upper and lower two layers of insulation material 21,25 to realize the electric insulation between heater and other parts, and is clipped in the resistive heater layer 23 between insulating materials.Heater upper surface makes electrostatic chuck 30 be fixed to heater top by adhesive linkage 32, and pending substrate is fixed to pedestal top by electrostatic chuck.Reaction chamber inner top also includes Top electrode 40, and the gas tip 41 of Top electrode lower surface realizes that the uniform of reacting gas is passed through.Uniformly need the resistance wire in heater to be also carried out zonal control in order that obtaining substrate temperature, it can be common that concentric circles annular spread, can be 2nd area, 3rd area even 4th area.But annular distribution cannot be compensated because of cooling gas（Helium）The temperatures at localized regions that through hole and jacking pin etc. bring is uneven, so prior art by heater it is also proposed that be separated into a large amount of of checkerboard（Typically larger than 9 areas）Independent control unit is realized to various region independent controls.Not only cause heater structure complicated, with high costs in excessive independent control area, and temperature control is difficult stabilization, if each independent temperature area and adjacent heater area excessive temperature differentials, frequently can lead to heater area heat adjacent around incoming to target area or guide, the distribution of the ideal temperature finally to be reached needs the heating power in the multiple independent heating regions of repeatedly adjustment to can be only achieved stabilization.For needing the processing technology of Fast transforms treatment temperature, it is unacceptable that prolonged adjustment reaches preferred temperature.
So needing a kind of new method or apparatus in the industry, the precise control of Temperature Distribution, and simple structure can not only be quickly realized, it is with low cost.
The content of the invention
The problem that the present invention is solved is that substrate obtains homogeneous Temperature Distribution in plasma treatment process in plasma processor, and can realize being switched fast in different disposal technique.
The present invention proposes a kind of plasma processor, including：One reaction cavity includes around airtight space, reaction cavity is constituted：Reaction chamber body sidewall and the pedestal in reaction cavity, pedestal top includes a heater, heater is fixedly arranged above electrostatic chuck for fixing pending substrate, it is characterized in that the heater includes lower floor's zone of heating and upper strata zone of heating, wherein lower floor's zone of heating is fixed to the pedestal by the first insulating barrier, also include the second insulation material layer between upper strata zone of heating and lower floor's zone of heating, the power of the heating power less than the heating wire of lower floor's zone of heating of its heating wire at the middle and upper levels in zone of heating.Resistance of the resistance of heating wire more than heating wire in lower floor's zone of heating in the zone of heating of upper strata.
It is also mutually fixed zone of heating top by one layer of layer of adhesive material including the 3rd insulation material layer with electrostatic chuck at the middle and upper levels.
Upper strata, lower floor's zone of heating have the heating region of multiple independent controls, and wherein lower floor's zone of heating heats whole electrostatic chuck, upper strata zone of heating covering part electrostatic chuck region.Quantity of the independent control heating region quantity more than lower floor's zone of heating independent control heating zone in the zone of heating of upper strata.Also include that the first heat driven circuit receives the temperature of multiple heating regions in lower floor's zone of heating, and compare the temperature of acquisition with default basal temperature, heating power is exported to the heating wire in multiple heating regions of lower floor's zone of heating according to comparative result so that lower floor's zone of heating each heating region has default basal temperature.Also include that the second heat driven circuit receives the temperature of multiple heating regions in the upper strata zone of heating, and compare the temperature of acquisition with default treatment temperature, and obtain multiple temperature gap △ T, inquiry temperature gap △ T and corresponding basal temperature relational database, obtain the power of the multiple heating region heating wire of input.So that heater upper surface has default treatment temperature.
Brief description of the drawings
Fig. 1 is prior art plasma processor schematic diagram；
Fig. 2 is heater structure schematic diagram of the present invention；
Fig. 3 a are heater lower floor zone of heating floor map of the present invention；
Fig. 3 b are heater upper strata zone of heating floor map of the present invention.
Specific embodiment
It is illustrated in figure 2 heater schematic diagram of the present invention, the present invention specific similar basic structure compared with the prior art shown in Fig. 1, differ primarily in that heater of the invention includes double-layer heating layer, including underlying HA layers of zone of heating and HB layers of zone of heating above, heater also includes the insulating barrier 27 positioned at HB zones of heating upper surface, insulating barrier 25 between two-layer zone of heating, positioned at the insulating barrier 21 of HA zone of heating lower surfaces.Also there is following many differences except locus in addition to being stacked up and down in upper and lower zone of heating HA, HB：
Both heating wire materials used are different, and the resistance of HA zones of heating is smaller, apply during same power supply that heating power is big, can be rapidly achieved target temperature, but because power is excessive, to reach that point-device temperature is relatively difficult to achieve, are suitable to the coarse adjustment of temperature.The resistance of HB zones of heating is larger, relatively low with respect to HA zone of heating heating powers, because power is relatively low and temperature accurately finely tuned.
The figure distribution of both heater strips is different, HA zones of heating are due to only carrying out temperature coarse adjustment interior on a large scale so corresponding independent temperature controlled zone scope is larger, can be divided into multiple concentric circles or circular annular region A1-A4 as shown in Figure 3 a, can thus cause that electrostatic chuck temperature has close basal temperature on the whole, different zones there can be a small amount of error（Such as 1-2 degree）.The figure of upper strata zone of heating HB can as shown in Figure 3 b, only be susceptible to the uneven region of temperature to periphery, such as A3, A4 region of correspondence lower section HA, and whole annulus is evenly dividing, and form the independent heating region B1-B16 of multiple arcs.The division in independent heating area is not limited to shown in Fig. 3 b, if central area is because in the presence of the phenomenon for causing local temperature uneven the reason for hardware configuration, it is also possible to which the corresponding site in central area sets independent heating region.The quantity in independent heating area is nor fixed can be set more than 16 regions, it is also possible to less, can the distribution in unrestricted choice independent heating area and quantity according to the actual requirements.The precise control of temperature can be realized by the difference of power in control input to each independent temperature controlled zone B1-B16 by the setting of HB layers of zone of heating, a small amount of temperature difference produced on HA annular regions A1-A4 below compensation or that other hardware reasons bring, realizes Temperature Distribution more homogeneous on electrostatic chuck.
Both control methods are also different, and the function of HA zones of heating is the target temperature for being rapidly achieved technique needs, so method of the HA zones of heating using temperature feedback control.The actual temperature that temp probe is detected on first heat driven circuit collection A1-A4, the basal temperature for needing setting with technique is compared, and the corresponding power of A1-A4 is input to according to comparative result setting, is finally reached target basal temperature.The function of HB zones of heating is a small amount of temperature difference that back-off HA zones of heating cannot be realized, because HA zones of heating can have different temperature in different technique, so when HA layers of basal temperature is different, heating power input same in HB zones of heating can bring different temperature rises.Therefore HB zones of heating are needed when the debugging stage, record HA zones of heating had different basal temperatures, and these power parameters are stored in database by the temperature variable △ T that different heating power can accordingly be produced in B1-B16 regionals.In actual plasma treatment, one the second heat driven circuit collects the actual temperature in the B1-B16 regions for detecting, contrast default treatment temperature, obtain both temperature difference △ T in different temperature controlled zones, the input power of the data base querying corresponding region obtained finally according to △ T and debugging stage, the corresponding region of input power input upper strata electrothermal layer for obtaining will be inquired about, being uniformly distributed for temperature on electrostatic chuck will finally be realized.Treatment temperature in the present invention refers to the temperature for being actually reached insulating barrier 27, by exist between upper and lower zone of heating insulating barrier 25 the treatment temperature that is measured with upper zone of heating upper surface of the basal temperature that obtains of following zone of heating have a small amount of difference, wherein actual temperature of the treatment temperature closer to top substrate.
Because lower layered heating is for upper layered heating provides close basal temperature in the present invention, so temperature difference between the different zones of B1-B16 regions very little in itself, also substantial amounts of heat will not be produced to flow between adjacent area, it is only necessary to which the heating power input that table look-at obtains setting can just reach accurate temperature.
The present invention is realized quick to substrate temperature and is accurately controlled by setting the double-layer heating layer with difference in functionality, and different heating regions can be selected to arrange to adapt to different hardware cases.Wherein lower floor's zone of heating is heated by high power so that substrate is rapidly achieved basal temperature, and upper strata zone of heating is controlled by unique, the heating power of input required for being directly obtained by tabling look-up.
The occasion of present invention application is except that can be at the capacitively coupled plasma shown in Fig. 1 in addition to device, or inductive type processor（ICP）, can equally be well applied to other needs the semiconductor processing device of quick accurate multi-region temperature control, such as go reaction chamber of photoresist etc. to need to carry out substrate the application scenario of accurate temperature controlling.The insulating barrier 27 in heater structure of the present invention shown in Fig. 2 can also be omitted, because the electrostatic chuck of top base material is exactly the ceramic material of insulation in itself, as long as can realize that the structure that the electrode in upper strata zone of heating HB and electrostatic chuck 30 is electrically insulated from one another can be applied to the present invention.It can also be the insulating materials that organic party thing is constituted that wherein insulating materials is mainly the ceramic materials such as aluminum oxide, aluminium nitride, silica.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, can be made various changes or modifications, therefore protection scope of the present invention should be defined by claim limited range.
Claims (10)
1. a kind of semiconductor processor, including：
One reaction cavity includes around airtight space, reaction cavity is constituted：Reaction chamber body sidewall and the pedestal in reaction cavity, pedestal top include a heater, and heater is fixedly arranged above electrostatic chuck for fixing pending substrate,
It is characterized in that the heater includes lower floor's zone of heating and upper strata zone of heating, wherein lower floor's zone of heating is fixed to the pedestal by the first insulating barrier, also include the second insulation material layer between upper strata zone of heating and lower floor's zone of heating, the power of the heating power less than the heating wire of lower floor's zone of heating of its heating wire at the middle and upper levels in zone of heating.
2. semiconductor processor as claimed in claim 1, it is characterised in that the upper strata zone of heating top is also mutually fixed by one layer of layer of adhesive material including the 3rd insulation material layer with electrostatic chuck.
3. semiconductor processor as claimed in claim 1, it is characterised in that resistance of the resistance of heating wire more than heating wire in lower floor's zone of heating in the upper strata zone of heating.
4. semiconductor processor as claimed in claim 1, it is characterised in that the upper strata, lower floor's zone of heating have the heating region of multiple independent controls, wherein lower floor's zone of heating heats whole electrostatic chuck, upper strata zone of heating covering part electrostatic chuck region.
5. semiconductor processor as claimed in claim 4, it is characterised in that quantity of the independent control heating region quantity more than lower floor's zone of heating independent control heating zone in the upper strata zone of heating.
6. semiconductor processor as claimed in claim 4, it is characterized in that, also include that the first heat driven circuit receives the temperature of multiple heating regions in lower floor's zone of heating, and compare the temperature of acquisition with default basal temperature, heating power is exported to the heating wire in multiple heating regions of lower floor's zone of heating according to comparative result so that lower floor's zone of heating each heating region has default basal temperature.
7. semiconductor processor as claimed in claim 6, it is characterized in that, also include that the second heat driven circuit receives the temperature of multiple heating regions in the upper strata zone of heating, and compare the temperature of acquisition with default treatment temperature, and obtain multiple temperature gap △ T, inquiry temperature gap △ T and corresponding basal temperature relational database, obtain the power of the multiple heating region heating wire of input；So that heater upper surface has default treatment temperature.
8. a kind of multi-region temp controlling heater for semiconductor processor,
It is characterized in that, the heater includes lower floor's zone of heating and upper strata zone of heating, wherein lower floor's zone of heating lower section includes the first insulating barrier, also include the second insulation material layer between upper strata zone of heating and lower floor's zone of heating, upper strata zone of heating top includes the 3rd insulating barrier, the power of the heating power less than the heating wire of lower floor's zone of heating of its heating wire at the middle and upper levels in zone of heating, resistance of the resistance of heating wire more than heating wire in lower floor's zone of heating in the zone of heating of upper strata.
9. multi-region temp controlling heater as claimed in claim 8, it is characterized in that, the upper strata, lower floor's zone of heating have the heating region of multiple independent controls, wherein multiple heating regions of lower floor's zone of heating cover whole heater plane, multiple heating region covering part heater planes of upper strata zone of heating.
10. multi-region temp controlling heater as claimed in claim 8, it is characterised in that quantity of the independent control heating region quantity more than lower floor's zone of heating independent control heating region in the zone of heating of upper strata.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511012714.5A CN106935468A (en) | 2015-12-31 | 2015-12-31 | A kind of semiconductor processor and the multi-region temp controlling heater for semiconductor processor |
| TW105135253A TWI631621B (en) | 2015-12-31 | 2016-10-31 | Semiconductor processor and multi-zone temperature control heater for semiconductor processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511012714.5A CN106935468A (en) | 2015-12-31 | 2015-12-31 | A kind of semiconductor processor and the multi-region temp controlling heater for semiconductor processor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106935468A true CN106935468A (en) | 2017-07-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511012714.5A Pending CN106935468A (en) | 2015-12-31 | 2015-12-31 | A kind of semiconductor processor and the multi-region temp controlling heater for semiconductor processor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106935468A (en) |
| TW (1) | TWI631621B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108451046A (en) * | 2018-04-26 | 2018-08-28 | 株洲利德英可电子科技有限公司 | A kind of tubular electron cigarette heater and preparation method thereof and electronic cigarette |
| CN111446198A (en) * | 2020-03-23 | 2020-07-24 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and control method thereof |
| CN113130279A (en) * | 2019-12-30 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| CN113707591A (en) * | 2020-05-22 | 2021-11-26 | 细美事有限公司 | Electrostatic chuck, method for manufacturing the same, and substrate processing apparatus |
| CN114126107A (en) * | 2021-11-29 | 2022-03-01 | 南京航空航天大学 | Laminating structure capable of being heated in partition mode and forming mold |
| WO2023138489A1 (en) * | 2022-01-21 | 2023-07-27 | 北京北方华创微电子装备有限公司 | Electrostatic chuck device and temperature control method |
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| CN1529994A (en) * | 2001-04-30 | 2004-09-15 | ���з� | Method and apparatus for controlling spatial temperature distribution across surface of workpiece support |
| CN102668058A (en) * | 2009-10-21 | 2012-09-12 | 朗姆研究公司 | Heating plate with planar heater zones for semiconductor processing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108451046A (en) * | 2018-04-26 | 2018-08-28 | 株洲利德英可电子科技有限公司 | A kind of tubular electron cigarette heater and preparation method thereof and electronic cigarette |
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| CN113130279B (en) * | 2019-12-30 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
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| CN113707591A (en) * | 2020-05-22 | 2021-11-26 | 细美事有限公司 | Electrostatic chuck, method for manufacturing the same, and substrate processing apparatus |
| CN114126107A (en) * | 2021-11-29 | 2022-03-01 | 南京航空航天大学 | Laminating structure capable of being heated in partition mode and forming mold |
| WO2023138489A1 (en) * | 2022-01-21 | 2023-07-27 | 北京北方华创微电子装备有限公司 | Electrostatic chuck device and temperature control method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201724259A (en) | 2017-07-01 |
| TWI631621B (en) | 2018-08-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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Application publication date: 20170707 |